CN100446248C - Process for producing microelectromechanical components - Google Patents

Process for producing microelectromechanical components Download PDF

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Publication number
CN100446248C
CN100446248C CNB02816573XA CN02816573A CN100446248C CN 100446248 C CN100446248 C CN 100446248C CN B02816573X A CNB02816573X A CN B02816573XA CN 02816573 A CN02816573 A CN 02816573A CN 100446248 C CN100446248 C CN 100446248C
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Prior art keywords
carrier
wafer
electronic component
emitter
structured supports
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Expired - Fee Related
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CN1701441A (en
Inventor
竹金·雷比
弗罗瑞恩·比克
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Schott AG
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Schott Glaswerke AG
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469Assemblies, i.e. hybrid integration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06572Auxiliary carrier between devices, the carrier having an electrical connection structure
    • HELECTRICITY
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    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06582Housing for the assembly, e.g. chip scale package [CSP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED

Abstract

The invention concerns a method enabling integration of functional structures in the package housing electronic components, for producing an electronic component comprising at least a semiconductor having on at least one side, at least an active detecting and/or transmitting device. Said method is characterized in that it comprises the following steps: preparing at least a chip on a wafer, preparing at least a support structure having at least a functional structure for the active detecting and/or transmitting device, assembling the wafer to at least a support, so that the side of the chip including the active detecting and/or transmitting device faces the support, separating the chip.

Description

Electronic component and manufacture method thereof
Technical field
The present invention relates to a kind of method of making electronic component, and a kind of electronic component with the shell encapsulation.In particular, the present invention relates in having the wafer array of structured supports, with the manufacture method of the electronic component of shell encapsulation, and have structured supports, with the electronic component of shell encapsulation.
Background technology
Nowadays make integrated electronics and adopt various wafer layer method for packing.This method also is used to make photoelectric cell in addition.Element has the protective layer of printing opacity for this reason, and these protective layer protection light-sensitive elements are not subjected to such as ectocines such as humidity or mechanical damages.
Yet machinery and optical function all are to realize in the assembling that is independent of outside semi-conductive self encapsulation afterwards so far.Like this, optical element for example, as plastic objective lens or glass fibre after forming with the optical chip of shell encapsulation with its connection.Yet when causing with the formation integrated circuit certainly, this compares the manufacturing tolerance of accessible high accuracy K.Therefore before the assembling optical element, after the element that encapsulates with shell has been cut, be that chip or circuit small pieces must be readjusted and be proofreaied and correct after wafer is separated, this causes the formation operation of adding and the corresponding production process that slowed down, and has improved manufacturing expense.
Summary of the invention
The objective of the invention is to overcome or reduce at least when producing and make electronic component, especially above-mentioned those shortcomings during photoelectric cell.
Correspondingly, be used to make according to of the present invention that electronic component-it comprises at least one semiconductor element, semiconductor element at least one side, have at least one active sensing device and/or emitter-method may further comprise the steps:
-at least one small pieces of preparation on a wafer,
-forming at least one structured supports, it has at least one functional structure that is used for active sensing device and/or emitter,
-wafer is engaged with at least one carrier, make that the side with active sensing device and/or emitter on the small pieces faces toward this carrier, and
-cut apart small pieces.
Here electronic component should be interpreted as can be with electrical signal conversion for other signal, and/or is the element of the signal of telecommunication with other conversion of signals.Especially photoelectric cell can be converted to the signal of telecommunication with light signal, and conversely electrical signal conversion is light signal.Yet under the notion of electronic component, it also can be other sensing and/or transmitter unit, and it for example can perhaps carry out opposite conversion with being converted to the signal of telecommunication such as physical quantity such as the sound or pressure or such as chemistry such as concentration amount.
In the method according to the invention, element engages at the wafer array with the carrier with the functional structure that is used for active sensing device and/or emitter, this can make carrier structure accurately aim at active sensing device and/or emitter, as a photoelectric sensing layer.In addition, pass through the method for the invention, the wafer layer encapsulation also has other functional structure or unit at least in part by laying, and the structured supports that for example is used for the optical lens of photoelectric cell realizes that this has further saved operation when forming this active sensing device and/or radiated element.And size of component by on the functional structure of coating more near the transducer on the chip or emitting structural and obviously diminish, this microminiaturization for this electronic component has significant contribution.
In a mode that has advantage especially, method of the present invention also can comprise and forms multilayer structured carrier.The multilayer here also can have different materials.For example hyaline layer and the semiconductor layer that is made of glass or plastics is combined.
Especially beneficial is that each layer has the functional structure that at least one is used for active sensing device and/or emitter respectively.For example in this way can be configured for the multilayer optical device of photoelectric cell.
Structuring can with state that wafer engages under finish.For example condensate-backflow-lens are laid on the carrier.On the other hand, when carrier approached to such an extent that make structurizing process damage carrier by mechanical treatment, the structuring under the engagement state had advantage.By engaging with wafer, carrier is supported, and for structuring provides higher intensity, carrier can be handled injury-freely.
Before engaging, also be advantageous in advance on carrier with structure.The carrier of precast constructionization then can be for example when engaging with wafer alignment wafer accurately.Structure prefabricated and allow not to be supported in the material that carries out preliminary structurizing process on the carrier using those on the semiconductor with the connection of wafer subsequently.For example, can on semiconductor element, use biological sensation recipient or organic lenticule like this.
Each of multilayer structured carrier layer not necessarily they with interconnect before wafer engages.More advantageous is to realize with engaging so of carrier: each layer is laid on the wafer or is applied on the complex that is made of wafer and those layers of having engaged with wafer.For example each layer can be registered on the chip architecture independently.This method also make the structuring of those fixing on the wafer layers or for example in the wafer array the mechanical skiving of those layers become possibility.
The formation of carrier can for example be undertaken by the offset printing structuring.This is by utilizing suitable shadow mask (schattenmasken) or being undertaken by molded and shaped (the LIGA method) of the preformed member that formed by lithographic printing.
Be to produce the suitable functional structure of carrier, these structures not only can the egative forme structuring, also can legal structuring.
Wherein the egative forme structuring is preferably by dry corrosion and/or wet-chemical etching and/or mechanical lapping, and polishing and/or machinery wear away generation.Legal structuring can form by means of evaporation, material spraying plating, CVD or PVD coating, plating or silk screen printing and etch-resistant coating.
In addition, it is interested that structurized carrier with the wall that is used for optical element is used for micro-optical component, because attainable high accuracy and wafer surface and carrier when carrier is set-it by be bonded on realization in the wafer array-between height parallel, even on miniature sizes, for example in photoelectric cell, also can be the active sensing device and/or the emitter structure precison optical component of small pieces on the wafer, these small pieces constitute the semiconductor element of electronic component after cutting apart or cutting.
Can form a space in this external carrier, this space can for example hold fluid, for example is used for transducer that fluid uses or fluid, optical element, microelectronic element or the active or passive electronic components that is used for chemical sensor.This space also can accurately hold standalone sensor or radiated element, and for example pressure sensor of piezoelectricity or piezoelectric emitter are as ultrasonic transmitter.
Cavity also can be considered as other functional structure.Especially structurized carrier can so form: make and determine at least one resonant cavity in element.These be defined in the carrier or carrier and semiconductor element between cavity also can be open at least in part.Cavity can have also that advantage ground surrounds active sensing device and/or emitter or the surface of the optical element of setting it on, for example protects described element surface injury-free.
For many application, the counterpart (Passungen) of machinery is particularly advantageous as the structure of carrier.For example in carrier, can produce a counterpart that is used for waveguide.Here accessible high accuracy is utilized to make waveguide core accurately to aim at transducer or emitter structures on small pieces or the chip again during the wafer aligned in carrier and wafer array.Equally, the function element that the counterpart of machinery also can be used for aiming at other is as lens or other carrier.These elements also can be in the follow-up course of processing, as installing after cutting apart wafer.Even in the process of follow-up other element of installation, the accessible precision of carrier in the wafer array and wafer assemblies, and the precision that is reached in the alignment procedures that cooperates is passed to other element.
In addition, carrier also can be so made carrier itself comprise optical element-as lens or grating-as functional structure by structuring.Carrier also can so have advantage ground and form: make carrier have at least one passage as functional structure.This passage especially can be finished following task: form active sensing device and/or emitter or transducer or emitter structures and other functional structure or with being connected of element environment.
In addition, general concavees lens and/or convex lens, Fresnel Lenses or prismatic lens, grating, especially phase grating and/or prism can be considered as the optical element that can be integrated in the carrier when forming carrier.For example prism can combine with guide that is used for waveguide or counterpart, so that light commutates on active sensing device and/or the emitter from the waveguide along the element surface trend.
At last, for application-specific, raceway groove, especially the V-type groove is suitable as functional structure.In this case, raceway groove or V-type groove are preferably prolonging the direction extension of carrier surface on carrier.This groove or raceway groove also can be used for laying or fixedly waveguide.For example, obtained as mentioned above as the V-type groove of the guide of waveguide and combination with advantage as the prism of light deflection element.
The method according to this invention also can have advantage ground and so expand: wafer also comprises the step that engages with at least one other carrier as wall with engaging of at least one structurized carrier.In this way, one or more structurized carriers as wall can be mutually and/or are combined with a carrier, and they also have other functional structure, as lens, mechanical engagement part or similar structures.
In addition, carrier can have advantage ground by semi-conducting material, and especially silicon or GaAs constitute.Indium phosphide-it must be sealed-also can be used as carrier material, and wherein sealing for example can realize by the layer of other in the wafer array.Above-mentioned semi-conducting material can critically be processed with known method, to produce the function corresponding structure.Glass, especially quartz glass and/or metal also can have advantage ground according to the application of element as carrier material.Foam glass or foam metal also can be realized properties of interest.
Generally also have advantage ground and use low-K dielectric, thereby for example in order to reduce the parasitic capacitance on the element and the radio-frequency performance of optimization element.Various plastics or expanded material can be used as low-K dielectric as foam glass.Low-K dielectric is particularly advantageous when semiconductor element comprises a radio-frequency unit.
Sapphire has excellent performance as carrier material to some application, and this is because it has very high temperature conduction and ultraviolet penetration capacity.
In addition, perhaps many other the inorganic and organic materials of composite material, pottery or plastics can have advantage ground as carrier material according to application and purpose.
Particularly carrier and wafer can comprise identical materials.This provides following possibility on the other hand: the wafer and the carrier that have small pieces at an easy rate with identical method processing.
Wafer and carrier can so form, and make them have adaptive thermal coefficient of expansion mutually outside relative interface.Like this, can avoid or reduce thermal stress between wafer and the carrier.For example be: the kovar teleoseal and the D263 glass that are used for the GaAlAs wafer material for the suitable material of carrier.Can use glass AF45, AF37 or B33 for Si (silicon) (100) wafer.
For the joint of wafer and carrier, the welding of the anode of wafer and carrier is suitable for.Yet, also can adopt bondingly according to used material, for example to carry out bondingly with polymer and/or epoxide-resin glue, the zone that wafer and/or carrier before be metallized connects by means of gold alloy solder, and Diffusion Welding or connect by glass solder.If carrier comprises more than one deck, also can be with the mutual applied in any combination of different joint methods.Especially for the carrier that comprises glass, also can have advantage ground and engage with the glass weldering.
Cutting is for convenience inserted spaced-apart locations by way of parenthesis by the overall structure that wafer and carrier obtain in carrier in the structurizing process of carrier.
In addition, the method also can so be expanded: the structure on carrier, form functional structure on an opposite side, this side and small pieces have that side thereof opposite of active sensing device and/or emitter.Like this can be for example present the signal that comes from two sides, and not influence the sensing function on the side that element has active sensing device and/or emitter to element.
The present invention gives a kind of electronic component, and it has than the better structure of mentioning above having of imperfect electronic component.Therefore, according to electronic component of the present invention-it forms by above-mentioned method and comprise at least one semiconductor element-have active sensing device and/or emitter on first side, semiconductor element on first side is covered by a structurized carrier simultaneously, and carrier has at least one functional structure that is used for active sensing device and/or emitter by way of parenthesis.
The functional structure of carrier can be for example by means of dry corrosion, wet-chemical etching, mechanical lapping or polishing and/or machinery wear away, evaporation, spraying plating, CVD or PVD coating, plating or silk screen printing or etch-resistant coating form.
Wherein, the structured supports of electronic component also can be used as wall, with the active sensing device of semiconductor element and/or emitter and function element-as be used for the lens of photoelectric cell-between form certain intervals.
Structurized carrier also can so design, and makes carrier determine a space.Especially in this space, can hold fluid, optical element, microelectronic element, active or passive electronic components or piezoelectric element.
Structurized carrier also can have advantage ground and have a mechanical engagement part, can accurately determine to be placed in the position of element wherein by this mechanical engagement part, for example lays the position of waveguide.
For some application-specific according to element of the present invention, functional structure can not only be positioned on that side of active sensing device of having of element and/or emitter.Element also can with the side of above-mentioned side thereof opposite on have this structure.
Particularly the carrier on the semiconductor element can have multilayer, and these layers can be made of different materials.These layers can have the functional structure that at least one is used for active sensing device and/or emitter respectively.Here especially each layer respectively tool different functional structures can be arranged, they combine mutually by the order of layer.So for example can will have a passage and combine as those layers of wall and those layers with lens for photoelectric cell.The characteristics of this element are an optical system complexity, multicomponent, and it directly places on the semiconductor element with high accuracy.
Description of drawings
Describe the present invention in detail by preferred embodiment shown in the accompanying drawing below, wherein identical or like has identical Reference numeral.
In the accompanying drawing:
Figure 1A is the cross section of the embodiment of the present invention of a carrier that is constructed to passage,
Figure 1B illustrates a modification of Figure 1A illustrated embodiment,
Fig. 2 is the cross section of embodiment of the present invention of the carrier of a mechanical engagement part that is configured to spherical lens,
Fig. 3 is the cross section of embodiment of the present invention of the carrier of a mechanical engagement part that is configured to optical lens,
Fig. 4 is the cross section of embodiment of the present invention of the carrier of a mechanical engagement part that is configured to waveguide,
Fig. 5 is the cross section of embodiment of the present invention with transparent configuration carrier of lens,
Fig. 6 is a cross section with embodiment of the present invention modification shown in Figure 5 of prism,
Fig. 7 illustrates another execution mode with multilayer structured carrier,
Fig. 8 is illustrated in the execution mode that has functional structure on the opposite flank of electronic component,
Fig. 9 is illustrated in the execution mode that has cavity on the opposite flank of semiconductor element, and
Figure 10 is combined in to form the cross section of stacked structure by wafer and structured supports in the wafer array.
Embodiment
Figure 1A illustrates an integral body with 1 cross section of representing according to first execution mode of electronic component of the present invention.Electronic component 1 comprises a semiconductor element or small pieces 3, and this element has an active sensing device and/or emitter 7 on first side 5 (being called upper side later on).Active sensing device and/or emitter 7 for example can be one, and to be used for electrical signal conversion be light signal or the photonic layer changed conversely.Semiconductor element 3 side 5 thereon engages with the downside 13 of a structured supports 9.The connection of semiconductor element 3 and structured supports 9 forms by means of the binder course between them 15.
Structured supports 9 has an access opening 17 as the functional structure 11 that is used for active sensing device and/or emitter 7.This access opening on the structured supports 9 that is laid in cover layer 19 and the upper side 5 of semiconductor element 3 determined a cavity 18.By suitably selecting binder course 15, cavity 18 can be isolated from the outside hermetically, thereby for example can avoid moisture to invade.This connection that semiconductor element 3 and structured supports are 9 also can realize by the anode electric welding.
Under the situation of photoelectric cell, can realize that by cavity 18 medium that the photonic layer of the active sensing device of this element and/or emitter 7 is had a low-refraction surrounds.Equally, the cavity 18 that constitutes by means of functional structure 11 can be used as the space that holds fluid, the feasible chemical analysis that can carry out liquid phase with a special active sensing device adaptive, the sensor layer form and/or emitter 7.
Such cavity 18 can be used as resonator.At this moment, for example active sensing device and/or emitter 7 also can be to be used for producing or to be used to detect radio frequency electromagnetic, microwave or hyperacoustic device.
This in addition cavity also can be used for optimizing the radiofrequency characteristics of the element of encapsulation.For this reason, cavity especially can have dielectric constant and equals 1 or near 1 medium.For example cavity can be evacuated or inflate.For same purpose, the also available low-K material of cavity is filled.The low-k of cavity dielectric helps to reduce the parasitic capacitance of semiconductor element.Low-K material is often used as the cladding material of carrier, is mainly used in the guide of the immediate area of semiconductor element and/or element.
Electronic component 1 also can so be processed, and makes to be used for the downside 10 of the contact of Connection Element at element.Can form the through hole 4 that passes semiconductor element matrix for this reason.Described through hole for example can form by passage is inserted in the matrix, and these passages are filled with electric conducting material then.Be used for circuit board and connect running through the weld spatter 6 that can apply hard lead on the through hole.
Figure 1B illustrates a modification of embodiment of the present invention shown in Figure 1.In order to form the electronic component 1 shown in Figure 1B, lay a structured supports 9 on the wafer of semiconductor element having equally, and this carrier cut apart then, in structured supports, insert the access opening 17 that semiconductor element 3 is given in a configuration here.With the wafer engagement state under, this access opening is determined cavitys with the cover layer 19 of structured supports 9, this cavity surrounds the upper side of active sensing device or emitter.With before structured supports 9 engages, optical element 14 (as lens or prism) is directly placed on the upper side of active sensing device and/or emitter at wafer.For this reason, lens for example reflux by polymer and are formed on active sensing device and/or the emitter 7.After engaging, cavity 18 surrounds these optical elements, makes active sensing device and/or emitter 7 and optical element 14 sealed isolation and protected avoiding damage.
Fig. 2 illustrates the cross section of another execution mode.Here the functional structure 11 of structured supports 9 is determined a mechanical engagement part 21 that is used for optical element.Here structure 11 preferably is configured to the shape of a raceway groove, and this raceway groove extends along the direction perpendicular to paper.The size of raceway groove is suitable for laying the spherical lens of being adorned 23, there is shown one of them spherical lens.Spherical lens can be fixing with structured supports 9 after inserting transparent adhesive tape.
Fig. 3 illustrates another execution mode according to element 1 of the present invention, wherein structured supports 9 functional structure that to have a form be mechanical engagement part 21.The shape of counterpart 21 accurately is complementary with the shape of optical lens 23.Lens can insert in the counterpart 21 after having formed the element that has carrier.Wherein the exact position of lens is guaranteed by the aligning of the structured supports 9 that engaged with semiconductor element 3 in the wafer array.
Fig. 4 illustrates an execution mode, and wherein structured supports 9 has a counterpart 21, and it is used to lay and aligning wave guides 25.After waveguide 25 was inserted into this counterpart 21, waveguide can be fixed on the element 1 by adhesive 29.
By formation method of the present invention, structured supports 9 with so accurately be positioned at above the semiconductor element 3 with its counterpart that connects mutually 21, make that sensor layer or luminescent layer 7 can be quite little, because the waveguide core 27 of guiding light is passed through counterpart 21 quite accurately alignment sensor layer or luminescent layer 7.In this way can correspondingly reduce component size or a plurality of waveguides are connected on the photoelectric cell with very little space requirement.
In all previous embodiment, not necessarily the carrier of claimed structureization is transparent.Therefore carrier can be made of semi-conducting material.For example carrier can have the material same with semiconductor element, and owing to identical thermal coefficient of expansion, element is on the whole to temperature-insensitive like this.
Yet the form of the functional structure of structured supports 9 also can be for the transparent optical element of corresponding ray type.
Fig. 5 illustrates a such execution mode.Wherein carrier 9 comprises such as the such transparent material of glass.Functional structure 11 comprises the lens 31 of a configuration to active sensing device and/or emitter 7 in this execution mode, it can converge or focus on the device 7 by device 7 light of launching or the light that shines on the element 1.
The material of carrier outside glass, also comprises the material that GaAlAs is such except the material to visible transparent, and these materials are that infrared ray can pass.
Fig. 6 illustrates a modification of execution mode shown in Figure 5.The functional structure 11 of structured supports is prismatic lens 31 in modification shown in Figure 6.
As in the aforementioned embodiment, structured supports 9 can not only have single one deck.But the carrier of available employing sandwich construction, wherein the carrier and the wafer array that is bonded on that has the wafer of the small pieces that are used for semiconductor element on it are finished.Multilayer carrier 9 can have the functional structure that is used for active sensing device and/or emitter 7 at it in each layer.
According to two examples of this execution mode, it is two-layer 91 that structured supports 9 comprises, they interconnect by another binder course.In these two execution modes, layer comprises the transparent material as glass or plastics maybe can see through ultrared GaAlAs, and has the functional structure of form at least one lens.
Another layer is as the wall between lens and active sensing device and/or the emitter.Passage is inserted in the layer as functional structure, and the light that this passage allows to be converged by lens passes through, this light from and arrive at active sensing device and/or emitter.
According to an execution mode, replace convex lens structures and adopt prismatic lens.
Wall allow to focus on has a less focal length, thereby and has for example reduced image error on the plane of active sensing device and/or emitter.
Fig. 7 illustrates another execution mode with carrier of sandwich construction again.The carrier 9 of this embodiment comprises 4 layer 91,92,93 and 94.Its middle level 91 and 93 is configured to the form of wall.One deck is arranged between this is two-layer, and this layer has lens 31 as functional structure 11.Layer 94 has a counterpart 21 that is used for waveguide 25.Adopt this structure the light signal that comes out from waveguide core 27 can be focused on active sensing device and/or the emitter 7, maybe will install 7 light that send and accurately converge on the waveguide core 27.
The order of layer or the functional structure of each layer are not limited to illustrated embodiment certainly.They can make up arbitrarily mutually according to application purpose.Especially by using thermal coefficient of expansion adaptive material mutually, also can be formed for the complicated and accurate optical system of photoelectric cell.
Fig. 8 illustrates an execution mode, and wherein semiconductor element itself has the functional structure that is used for active sensing device and/or emitter.Correspondingly, the side with that side thereof opposite of active sensing device of having of semiconductor element and/or emitter 7 has functional structure equally.
Semiconductor element 3 also has a counterpart that is used for waveguide as functional structure, and waveguide is introduced element 1 from downside 10.Electronic component comprises a chip stack in addition, and it is made up of semiconductor element 3 and another chip 33 with active sensing device and/or emitter 7, and chip is that semiconductor element 3 is placed on the chip 33.This set also carries out the wafer array as being bonded into carrier.Another element 33 has a counterpart 21 equally, and it introduces waveguide 25, and waveguide for example can connect with counterpart mutually by means of bonding contact 29.
Fig. 9 illustrates another execution mode of electronic component, and it has cavity 18 on the opposite sides of semiconductor element 3.This cavity for example can be used as resonant cavity and is used for radio-frequency technique.This resonant cavity, promptly cavity is made of the wall of the access opening 17 of structured supports 9 and the wall and the corresponding cover layer of structured substrate 331.The cover layer of structured substrate 331 is formed by another substrate 332, and in this execution mode, structured supports 9 has the cover layer 19 that is similar to element shown in Figure 1A and the 1B simultaneously.
Be bonded on the overall structure of each parts in the wafer array, especially when application multilayer carrier, can reach the unallowed thickness of conventional cutting.Figure 10 illustrates the cross section of this structure in the preceding wafer array of cutting.Wafer 35 has a plurality of fritters that are used to have the semiconductor element 3 of active sensing device and/or emitter 7, also has other wafer 36,37,38 that engages with it, wafer 36,37, and 38 constitute structured supports 9.Described carrier comprises wall and the wafer with refraction structure 11 of integral lens 31 forms with access opening 17.This structure has the following advantages with respect to the firm transparent carrier with integral lens: can use relatively thin transparent wafers 38 under identical refracting power condition.
In order to cut apart the relative thicker structure that is made of wafer 35 to 38, what have advantage is that wafer has split position 40 at least in part.Split position interconnects by each articulamentum 41, and the wafer 35 to 38 for encapsulation or wafer array in the wafer array makes wafer have necessary stability like this.These articulamentums then simply method disconnect by the corrosion of wet-chemical etching or dry chemical or by cutting.
Split position is being constructed in replacement in wafer before the engaging process, they also can at first engage with its substrate, and then by structuring.Joint and structurized order are also variable to each layer, and for example when each layer had different materials and/or thickness, this may be good.The ground floor of carrier is engaged with the semiconductor wafer with small pieces, and then carry out structuring,, for example make in advance to engage with ground floor through structurized layer then as other layer of carrier.The certainly any desirable mode of this order changes, and is applied to arbitrarily on the layer.
After being divided into monolithic, promptly cutting apart the wafer rear wall and can then be passivated in case of necessity.This can for example be undertaken by suitable old long-pending method, for example old long-pending, the evaporation of wet-chemical, spraying plating, DVD or PVD coating.
Stack of wafers at last can be by surface treatment in the wafer array.For example the optical property of lens 31 can be improved with antireflecting coating or infrared coating.In addition, for improving durability, can apply scratch-resistant protective layers or anticorrosive protective layer.These coatings also can produce by CVD or PVD method by known method.
Ground can be coated to above the stack of wafers after having formed stack of wafers the functional structure 11 of wafer shown in Figure 10---it comprises the array of lens 31---.At this moment can replace wafer 38, as applying each lens as shown in Figure 3, perhaps these lens for example are created on the stack of wafers as polymer backflow lens.
Reference numeral
Electronic component 1
Semiconductor element, small pieces 3
Run through hole 4
The upper side 5 of semiconductor element
Weld spatter 6
Active sensing device and/or emitter 7
Structured supports 9
The layer 91,92,93,94 of structured supports
The downside 10 of semiconductor element
Functional structure 11
The downside 13 of structured supports
Optics element 14
Connect layer 15
Access opening 17
Cavity 18
Cover layer 19
Mechanical engagement part 21
Lens 23,31
Waveguide 25
Waveguide core 27
Adhesive 29
The semiconductor-based end 33,331,332
Wafer 35,36,37,38
Split position 40

Claims (43)

1. be used to make the method for electronic component (1), described electronic component comprises at least one semiconductor element (3), semiconductor element has at least one active sensing device and/or emitter (7) at least one side, it is characterized in that this method may further comprise the steps:
-go up at least one small pieces of preparation at a wafer (35),
-forming at least one structured supports (9), it has at least one functional structure (11) that is used for active sensing device and/or emitter (7),
-wafer (35) is engaged with at least one structured supports (9), a side that makes small pieces (5) have active sensing device and/or emitter (7) faces toward structured supports (9),
-cut apart small pieces.
2. the method for claim 1 is characterized in that, the step that forms structured supports (9) comprises the step that forms a multilayer structured carrier.
3. method as claimed in claim 2, it is characterized in that the step that forms multilayer structured carrier is included in each layer (91,92 of multilayer structured carrier (9), 93,94) form at least one in and be used for the step of the functional structure (11) of active sensing device and/or emitter (7).
4. as claim 2 or 3 described methods, it is characterized in that the step that wafer (35) engages with at least one structured supports (9) comprises that each layer (91,92,93,94) successively is bound up on the step on the wafer (35).
5. the method for claim 1 is characterized in that, the step that forms structured supports comprises the step of the carrier that structure has engaged with wafer (35).
6. the method for claim 1 is characterized in that, the step that forms structured supports (9) comprises the step of the structure (11) of precast construction carrier (9).
7. the method for claim 1 is characterized in that, the step that forms structured supports (9) comprises the structurized step of offset printing of carrier.
8. the method for claim 1 is characterized in that, structurized step comprises wearing away by means of dry corrosion and/or wet-chemical etching and/or mechanical lapping and/or machinery carries out structurized step.
9. the method for claim 1 is characterized in that, structurized step comprises by evaporation and/or spraying plating and/or CVD coating and/or PVD coating and/or plating and/or by means of the structuring step of silk screen printing and etch-resistant coating.
10. the method for claim 1 is characterized in that, the step that forms structured supports comprises step that is used in particular for the wall of at least one optical element of formation.
11. the method for claim 1 is characterized in that, the step that forms structured supports comprises and forms a step that is used in particular for holding the space of fluid, optical element, piezoelectric element, microelectronic element and/or active or passive electronic components.
12. the method for claim 1, it is characterized in that, the step that forms structured supports comprises the step that forms at least one cavity, and especially resonant cavity or one surround the cavity of active sensing device and/or emitter (7) or optical element mounted thereto.
13. the method for claim 1 is characterized in that, the step that forms structured supports comprises formation at least one raceway groove, the especially step of a V-type groove, and wherein raceway groove is preferably on the direction of carrier surface and extends.
14. the method for claim 1 is characterized in that, the step that forms structured supports comprises the step that forms a mechanical engagement part (21).
15. method as claimed in claim 14 is characterized in that, mechanical engagement part (21) is suitable for holding an optical element, especially a waveguide (25).
16. the method for claim 1 is characterized in that, the step that forms structured supports comprises step with carrier of optical element of formation.
17. method as claimed in claim 16, it is characterized in that, the step that formation has the carrier of optical element comprises formation lens (31), especially the step of concavees lens and/or convex lens and/or Fersnel lens and/or prismatic lens, and/or formation grating, the step of especially phase grating, and/or prism.
18. the method for claim 1 is characterized in that, the step that forms structured supports comprises that forming at least one passes the step of the passage (17) of carrier.
19. the method for claim 1 is characterized in that, the step that wafer (35) engages with at least one structured supports comprises the step that engages with at least one other carrier as wall.
20. the method for claim 1 is characterized in that, carrier has one group of a kind of material in the material that comprises semi-conducting material, and this group material is silicon and/or GaAs and/or indium phosphide especially; Glass, especially quartz glass; Calcirm-fluoride; Metal; Foam glass; Foam metal; Low-K dielectric; Sapphire, especially sapphire glass; Composite material; Pottery and plastics.
21. the method for claim 1 is characterized in that, wafer (35) and structured supports (9) comprise identical materials.
22. the method for claim 1 is characterized in that, carrier and wafer have and the mutual adaptive thermal coefficient of expansion in interface respect to one another.
23. the method for claim 1 is characterized in that, the step that wafer engages with carrier comprises that wafer and carrier carry out the step of anode welding.
24. the method for claim 1 is characterized in that, the step that wafer engages with carrier comprises that wafer and carrier carry out step for adhering.
25. method as claimed in claim 24 is characterized in that, the step that wafer engages with carrier comprises with polymer and/or epoxide-resin glue step for adhering.
26. the method for claim 1 is characterized in that, the step that wafer engages with carrier comprises carries out metallized step to zone wafer and/or carrier, and the step of metallized area being carried out gold alloy solder.
27. the method for claim 1 is characterized in that, the step that wafer engages with carrier comprises the step of Diffusion Welding and/or glass weldering.
28. the method for claim 1 is characterized in that, the step that forms at least one structured supports is included in the step that forms split position (40) at least one carrier.
29. the method for claim 1, it is characterized in that, form at least one on the side of side thereof opposite of active sensing device and/or emitter (7) and be used for the step of the functional structure (11) of active sensing device and/or emitter (7) having with small pieces.
30. electronic component (1), it comprises at least one semiconductor element (3), semiconductor element has at least one active sensing device and/or emitter (7) on first side (5) at least, it is characterized in that, semiconductor element (3) is gone up with a structured supports (9) in first side (5) and is covered, and this carrier has at least one functional structure that is used for active sensing device and/or emitter (7).
31. electronic component as claimed in claim 30, it is characterized in that functional structure is by means of dry corrosion and/or wet-chemical etching and/or mechanical lapping and/or machinery is worn away, evaporation and/or sputter and/or CVD coating and/or PVD coating and/or plating and/or form by means of silk screen printing and/or etch-resistant coating.
32., it is characterized in that structured supports has a wall, is used in particular at least one optical element as claim 30 or 31 described electronic components.
33. electronic component as claimed in claim 30 is characterized in that, structured supports has at least one in particular for holding the space of fluid.
34. electronic component as claimed in claim 30, structured supports have a mechanical engagement part (21).
35. electronic component as claimed in claim 34 is characterized in that, the mechanical engagement part is applicable to and holds an optical element, an especially waveguide (25), and/or a microelectronic element and/or a piezoelectric element.
36. electronic component as claimed in claim 30 is characterized in that, carrier and semiconductor element (3) interconnect by the anode welding.
37. electronic component as claimed in claim 30 is characterized in that, carrier and semiconductor element (3) are mainly used polymer and/or epoxide-resin glue and/or glass solder bonding and/or welding and/or Diffusion Welding.
38. electronic component as claimed in claim 30 is characterized in that, has at least one functional structure (11) having on the opposite side (10), the side (5) of active sensing device and/or emitter (7) with semiconductor element (3).
39. electronic component as claimed in claim 30 is characterized in that, carrier has at least one passage (17).
40. electronic component as claimed in claim 30 is characterized in that, carrier has multilayer (91,92,93,94).
41. electronic component as claimed in claim 40 is characterized in that, each layer (91,92,93,94) has at least one functional structure that is used for active sensing device and/or emitter (11) respectively.
42. electronic component as claimed in claim 30 is characterized in that, carrier has at least one cavity, especially a resonant cavity.
43. electronic component as claimed in claim 30 is characterized in that, carrier has at least one raceway groove, V-type groove especially, and wherein raceway groove is preferably on the direction of carrier surface and extends.
CNB02816573XA 2001-08-24 2002-08-26 Process for producing microelectromechanical components Expired - Fee Related CN100446248C (en)

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DE2001141571 DE10141571B8 (en) 2001-08-24 2001-08-24 A method of assembling a semiconductor device and integrated circuit fabricated therewith that is suitable for three-dimensional, multi-layered circuits
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