CN100449805C - AlGaInP compound semiconductor luminant and its making method - Google Patents
AlGaInP compound semiconductor luminant and its making method Download PDFInfo
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- CN100449805C CN100449805C CNB2006100635467A CN200610063546A CN100449805C CN 100449805 C CN100449805 C CN 100449805C CN B2006100635467 A CNB2006100635467 A CN B2006100635467A CN 200610063546 A CN200610063546 A CN 200610063546A CN 100449805 C CN100449805 C CN 100449805C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 150000001875 compounds Chemical class 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 18
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 238000003466 welding Methods 0.000 claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims description 39
- 238000001259 photo etching Methods 0.000 claims description 16
- 230000008020 evaporation Effects 0.000 claims description 15
- 238000001704 evaporation Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000013461 design Methods 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 238000011161 development Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The disclosed AlGaInP-series compound semiconductor luminescent device comprises: a N-type layer connected with a N electrode, an AlGaInP active area, a P-type layer, and a bilayer P-type metal layer consisted of P-type ohmic contact layer and a P-type welding electrode layer. This invention decreases size and cost, enhances the luminous intensity and product reliability greatly.
Description
[technical field]
The present invention relates to the manufacture method of semiconductor device, relate in particular to a kind of AlGaInP compound semiconductor luminant and manufacture method thereof.
[background technology]
As semi-conducting material the most very powerful and exceedingly arrogant on the market, the application of AlGaInP material has obtained swift and violent development.On the AlGaInP-series light-emitting device architecture, P type metal level is on the device light-emitting area, comprises P type ohmic contact metal layer and P type welding electrode, the outgoing of P type metal level meeting blocking device light.At present, in the manufacture craft of AlGaInP-series light-emitting device, P type welding electrode and P type ohmic contact metal layer once or gradation form, plan view shape is identical, its shortcoming is because P type ohmic contact metal layer thickness is thicker, thereby cause positive size bigger, stopped that seriously light sends from device inside, greatly reduce the luminous intensity of device.
[summary of the invention]
The objective of the invention is to propose a kind of manufacture method of AlGaInP compound semiconductor luminant.
The manufacture method of the AlGaInP compound semiconductor luminant that the present invention proposes, the step that comprises the N type electrode that stacks gradually processing N-type layer, AlGaInP active area, P type layer, P type metal level and be connected with described N type layer lower surface, it is characterized in that described P type metal level adopts double-decker, comprise difform P type ohmic contact layer and P type welding electrode, its processing technology comprises the following steps:
(1) on the epitaxial wafer that constitutes by N type layer, AlGaInP active area and P type layer, adopt photoetching again the technology of etching form P type ohmic contact layer at P type laminar surface;
(2) adopt anti-stripping technology (Lift-off) on P type ohmic contact layer, to form P type welding electrode;
Described N type electrode be connected to evaporation, adopt electron beam coater at N type laminar surface evaporation N type electrode metal.
The step of described formation P type ohmic contact layer comprises:
(a) P type ohmic contact layer evaporation adopts electron beam coater at P type layer wafer surface evaporation P type ohmic contact layer;
(b) photoresist photoetching is arrived photoresist layer by photoetching process with the figure transfer that designs on the mask;
(c) etching P type ohmic contact layer adopts corrosive liquid to corrode the P type ohmic contact layer of non-photoresist protective position;
(d) remove photoresist, after the employing organic solvent is removed photoresist, thereby the figure transfer on the mask is arrived P type ohmic contact layer.
The step of described formation P type welding electrode comprises:
(e) adopt the photoetching of anti-stripping photolithography glue, the figure transfer that designs on the mask is arrived photoresist layer;
(f) adopt electron beam coater evaporation P type welding electrode metal on P type ohmic contact layer;
(g) photoresist is counter peels off, and adopts organic solvent to remove photoresist layer, removes the unnecessary electrode metal on photoresist layer simultaneously, thereby the figure transfer on the mask is arrived P type welding electrode.
Compared with prior art, the AlGaInP compound semiconductor luminant spare that the present invention makes, adopt the structure of double-deck difform P electrode, purpose is to do the width of P type ohmic contact metal layer little, size reduces, thereby make that positive size is also reduced, make electrode block luminous effect reduction, thereby increase the luminous intensity of luminescent device greatly; Simultaneously, also, adopt the manufacturing cost that has reduced product than thin metal level because P type welding electrode diminishes.In addition, the manufacture method that the present invention proposes has been simplified procedure of processing, and reliability of products is good.
[description of drawings]
Below in conjunction with drawings and Examples the present invention is done detailed explanation, wherein:
Fig. 1 is the schematic cross-section of prior art light emitting semiconductor device;
Fig. 2 is the vertical view of prior art light emitting semiconductor device;
Fig. 3 is the schematic cross-section of first embodiment of light emitting semiconductor device of the present invention;
Fig. 4 is a vertical view embodiment illustrated in fig. 3;
Fig. 5 is the schematic cross-section of second embodiment of light emitting semiconductor device of the present invention;
Fig. 6 is the schematic cross-section of the 3rd embodiment of light emitting semiconductor device of the present invention;
Fig. 7 to Figure 10 is that the prior art light emitting semiconductor device forms photoetching that P type welding electrode adopts etching technics schematic diagram again;
Figure 11 to Figure 13 is that light emitting semiconductor device of the present invention forms anti-stripping technology (Lift-off) schematic diagram that P type welding electrode adopts.
[embodiment]
See also Fig. 1 and Fig. 2, existing AlGaInP compound semiconductor luminant spare comprises: N type layer 5, AlGaInP active area 4, P type layer 3, P type metal level and the N electrode 6 that is connected with N type layer of order stack.P type metal level is structure as a whole, and the bottom is a P type ohmic contact metal layer 2, and top is P type welding electrode 1.The P type metal layer thickness of this kind structure is thicker, and horizontal positive size is bigger, has stopped that seriously light sends from device inside, greatly reduces the luminous intensity of device.
Fig. 3 and Fig. 4 have demonstrated the structure of first embodiment of the present invention, its agent structure and existing AlGaInP compound semiconductor luminant spare are basic identical, also comprise N type layer 5, AlGaInP active area 4, P type layer 3, P type metal level and the N electrode 6 that is connected with N type layer of order stack.Different is: P type metal level adopts double-deck difform structure.As shown in Figure 3, P type ohmic contact layer 2 comprises the cylinder that is layered in P type layer centre and four raised lines that stretch out from this cylinder along the diagonal of luminescent device, and described P type welding electrode 1 overlaps on the mediate cylindrical of P type ohmic contact layer.In this structure, because the size of P type welding electrode 1 is less and be positioned at the center of device, the load capacity of P type ohmic contact metal layer 2 is reduced, therefore, its thickness and transverse width also can reduce; Positive size is less relatively, makes electrode block luminous effect and reduces.
Fig. 5 is second embodiment of the present invention, its agent structure is identical with structure shown in Figure 4, different is, described P type ohmic contact layer 2 comprises the quadra that is layered in above the P type layer 3, be positioned at this framework middle cylinder and four raised lines that stretch out and link to each other with described framework from cylinder along the diagonal of luminescent device, described P type welding electrode 1 overlaps on the mediate cylindrical of P type ohmic contact layer 2.
As a kind of distortion, above-mentioned quadra also can be done circular, as shown in Figure 6.
Because N type layer, AlGaInP active area, the P type layer of AlGaInP compound semiconductor luminant spare are finished by last one procedure epitaxial growth, so producing AlGaInP compound semiconductor luminant spare mainly is to finish P type ohmic contact layer, N electrode and P type welding electrode.
In the semiconductor device technology process, the technology that adopts photoetching usually with the figure transfer that designs on the mask to wafer surface.The main raw material of photoetching process are photoresists, photoresist is a kind of photoactive substance that is similar to the material that is coated with on the film, irradiation or radiation by exposure sources such as ultraviolet lights, cause its self property and structural change, thereby solubility is changed, by developer solution the part that can dissolve is removed, thereby just formed corresponding figure on the mask at the photoresist layer of wafer surface.
The processing step of photoetching mainly contains equal glue, preceding baking, exposure and development, wherein all the purpose of glue is to form even distribution photoresist layer in wafer surface, all the glue machine uses vacuum to hold wafer, and photoresist on wafer surface is dripped realizes that by high speed rotating photoresist evenly distributes in wafer surface.The purpose of preceding baking is the solvent in the part evaporation photoresist, and this step is carried out in baking oven or on the heating plate.Exposure machine is used in exposure, use the mask Gai Zaiyi that has designed fine circuit pattern to coat the wafer surface of photoresist layer, exposure sources such as use ultraviolet light expose to wafer, there is the position of figure can block penetrating of ultraviolet light on the mask, thereby make the photoresist discord ultraviolet light reaction of this part, other parts are then reacted and are generated the material that is dissolvable in water developer solution.In development step, wafer is soaked in the developer solution, thereby realizes the formation of Micropicture at the wafer surface photoresist layer by the solubilizing reaction of developer solution and part solubilized photoresist.
Existing technology in forming P type ohmic contact layer or P type welding electrode step general adopt traditional first photoetching again the method for etching carry out, step comprises 1.P type ohmic contact layer or P type welding electrode evaporation, adopts electron beam coater at wafer surface evaporation P type ohmic contact layer or P type welding electrode metal (Fig. 7); 2. photoresist photoetching is arrived photoresist layer (Fig. 8) by above-mentioned photoetching process with the figure transfer that designs on the mask; 3. etching P type ohmic contact layer or P type welding electrode (Fig. 9), because general photoresist can the liquid of anti-the corrosion of metals, thereby can adopt the corrosive liquid corrosion not have the electrode metal layer of photoresist protective position; 4. remove photoresist (Figure 10), after the employing organic solvent is removed photoresist, so just the figure transfer on the mask is arrived P type ohmic contact layer or P type welding electrode.
And the present invention adopts unique anti-stripping technology (Lift-off) to carry out in forming P type welding electrode step, and the step of this technology comprises 1. anti-stripping photolithography glue photoetching (Figure 11), and the figure transfer that designs on the mask is arrived photoresist layer; 2.P type welding electrode evaporation (Figure 12) generally adopts electron beam coater evaporation P type welding electrode metal; 3. photoresist is counter peels off (Figure 13), adopts organic solvent to remove photoresist layer, removes the unnecessary electrode metal on photoresist layer simultaneously, thereby the figure transfer on the mask is arrived P type welding electrode.As seen, the new technology of employing is simplified more than current technology.
P type ohmic contact metal layer 2 of the present invention and P type welding electrode 1 adopt the difformity design, make that by the width that reduces P type ohmic contact metal layer its positive size is reduced, thereby increase by 5 luminous intensity.In addition,, the thickness of P type ohmic contact metal layer 2 is reduced, reduced the cost of making because the size of P type welding electrode 1 reduces.In addition, the anti-stripping technology (Lift-off) of the uniqueness that adopts in forming P type welding electrode step is simplified more than existing technology.
The luminous intensity that experiment showed, luminescent device of the present invention increases more than 10%; Simultaneously also owing to adopt thin metal level also to reduce by 5% manufacturing cost.
Claims (3)
1. the manufacture method of an AlGaInP compound semiconductor luminant, the step that comprises the N type electrode that stacks gradually processing N-type layer, AlGaInP active area, P type layer, P type metal level and be connected with described N type layer lower surface, it is characterized in that described P type metal level adopts double-decker, comprise difform P type ohmic contact layer and P type welding electrode, its processing technology comprises the following steps:
(1) on the epitaxial wafer that constitutes by N type layer, AlGaInP active area and P type layer, adopt photoetching again the technology of etching form P type ohmic contact layer at P type laminar surface;
(2) adopt anti-stripping technology (Lift-off) on P type ohmic contact layer, to form P type welding electrode;
Described N type electrode be connected to evaporation, adopt electron beam coater at N type laminar surface evaporation N type electrode metal.
2. the manufacture method of AlGaInP compound semiconductor luminant as claimed in claim 1 is characterized in that the step of described formation P type ohmic contact layer comprises:
(a) P type ohmic contact layer evaporation adopts electron beam coater at P type laminar surface evaporation P type ohmic contact layer;
(b) photoresist photoetching is arrived photoresist layer by photoetching process with the figure transfer that designs on the mask;
(c) etching P type ohmic contact layer adopts corrosive liquid to corrode the P type ohmic contact layer of non-photoresist protective position;
(d) remove photoresist, after the employing organic solvent is removed photoresist, thereby the figure transfer on the mask is arrived P type ohmic contact layer.
3. the manufacture method of AlGaInP compound semiconductor luminant as claimed in claim 1 is characterized in that: the step of described formation P type welding electrode comprises:
(e) adopt the photoetching of anti-stripping photolithography glue, the figure transfer that designs on the mask is arrived photoresist layer;
(f) adopt electron beam coater evaporation P type welding electrode metal on P type ohmic contact layer;
(g) photoresist is counter peels off, and adopts organic solvent to remove photoresist layer, removes the unnecessary electrode metal on photoresist layer simultaneously, thereby the figure transfer on the mask is arrived P type welding electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100635467A CN100449805C (en) | 2006-11-08 | 2006-11-08 | AlGaInP compound semiconductor luminant and its making method |
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| CNB2006100635467A CN100449805C (en) | 2006-11-08 | 2006-11-08 | AlGaInP compound semiconductor luminant and its making method |
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| CN101017867A CN101017867A (en) | 2007-08-15 |
| CN100449805C true CN100449805C (en) | 2009-01-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102569619B (en) * | 2011-12-30 | 2016-11-23 | 鸿利智汇集团股份有限公司 | A kind of manufacture method of COB light source |
| CN104037279A (en) * | 2014-07-01 | 2014-09-10 | 厦门市三安光电科技有限公司 | Method for manufacturing light emitting diode (LED) with current blocking layer |
| CN105355750A (en) * | 2015-11-30 | 2016-02-24 | 广东德力光电有限公司 | LED luminescence chip employing photoresist as protection layer and manufacturing method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5797686A (en) * | 1980-12-10 | 1982-06-17 | Nec Corp | Light emitting element pellet |
| JPS615585A (en) * | 1984-06-19 | 1986-01-11 | Rohm Co Ltd | Light-emitting semiconductor element and manufacture thereof |
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| US6958496B2 (en) * | 2003-10-15 | 2005-10-25 | United Epitaxy Company, Ltd. | Light-emitting semiconductor device having enhanced brightness |
| CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
| US20060033113A1 (en) * | 2004-08-11 | 2006-02-16 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting diode and method of manufacturing the same |
| US20060091565A1 (en) * | 2004-11-04 | 2006-05-04 | Slater David B Jr | LED with self aligned bond pad |
| CN1828959A (en) * | 2005-03-04 | 2006-09-06 | 斯坦雷电气株式会社 | Semiconductor light emitting device |
-
2006
- 2006-11-08 CN CNB2006100635467A patent/CN100449805C/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5797686A (en) * | 1980-12-10 | 1982-06-17 | Nec Corp | Light emitting element pellet |
| JPS615585A (en) * | 1984-06-19 | 1986-01-11 | Rohm Co Ltd | Light-emitting semiconductor element and manufacture thereof |
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| US6958496B2 (en) * | 2003-10-15 | 2005-10-25 | United Epitaxy Company, Ltd. | Light-emitting semiconductor device having enhanced brightness |
| US20060033113A1 (en) * | 2004-08-11 | 2006-02-16 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting diode and method of manufacturing the same |
| US20060091565A1 (en) * | 2004-11-04 | 2006-05-04 | Slater David B Jr | LED with self aligned bond pad |
| CN1828959A (en) * | 2005-03-04 | 2006-09-06 | 斯坦雷电气株式会社 | Semiconductor light emitting device |
| CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
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Effective date of registration: 20090320 Address after: Guangdong Province, Shenzhen city Baoan District West Township Hezhou Hung Industrial Park B building 3 floor Patentee after: Shenzhen Orient Technology Co., Ltd. Address before: Guangdong city of Shenzhen province Baoan District Xixiang Hezhou Hung Industrial Park 1 Building 3 floor Patentee before: Wu Zhipu |
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Assignee: Shenzhen Aolunde Opto-Electric Co., Ltd. Assignor: Shenzhen Orient Technology Co., Ltd. Contract record no.: 2012440020017 Denomination of invention: AlGaInP compound semiconductor luminant and its making method Granted publication date: 20090107 License type: Exclusive License Open date: 20070815 Record date: 20120222 |
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