CN100452472C - 有机场效晶体管及其制备方法 - Google Patents
有机场效晶体管及其制备方法 Download PDFInfo
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- CN100452472C CN100452472C CNB2004100484383A CN200410048438A CN100452472C CN 100452472 C CN100452472 C CN 100452472C CN B2004100484383 A CNB2004100484383 A CN B2004100484383A CN 200410048438 A CN200410048438 A CN 200410048438A CN 100452472 C CN100452472 C CN 100452472C
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- Prior art keywords
- sam
- effect transistor
- bifunctional molecule
- polymerization
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
- H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/731—Liquid crystalline materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/456,749 US7132680B2 (en) | 2003-06-09 | 2003-06-09 | Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
US10/456,749 | 2003-06-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1612372A CN1612372A (zh) | 2005-05-04 |
CN100452472C true CN100452472C (zh) | 2009-01-14 |
Family
ID=33490231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100484383A Expired - Fee Related CN100452472C (zh) | 2003-06-09 | 2004-06-03 | 有机场效晶体管及其制备方法 |
Country Status (2)
Country | Link |
---|---|
US (3) | US7132680B2 (zh) |
CN (1) | CN100452472C (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7132680B2 (en) * | 2003-06-09 | 2006-11-07 | International Business Machines Corporation | Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
US7119356B2 (en) * | 2003-07-18 | 2006-10-10 | Lucent Technologies Inc. | Forming closely spaced electrodes |
US6989290B2 (en) * | 2003-11-15 | 2006-01-24 | Ari Aviram | Electrical contacts for molecular electronic transistors |
US7767998B2 (en) * | 2003-12-04 | 2010-08-03 | Alcatel-Lucent Usa Inc. | OFETs with active channels formed of densified layers |
WO2005122293A2 (en) * | 2004-06-08 | 2005-12-22 | Princeton University | Formation of ordered thin films of organics on metal oxide surfaces |
US20070128762A1 (en) * | 2005-12-02 | 2007-06-07 | Lucent Technologies Inc. | Growing crystaline structures on demand |
ATE470957T1 (de) * | 2006-03-24 | 2010-06-15 | Merck Patent Gmbh | Organische halbleiterformulierung |
US8049205B2 (en) * | 2006-04-06 | 2011-11-01 | Xerox Corporation | Poly(alkynylthiophene)s and electronic devices generated therefrom |
MX2010002070A (es) * | 2007-09-28 | 2010-03-25 | Rhodia | Superficies modificadas que comprenden particulas de oxido inorganico de nanoescala. |
TWI360901B (en) * | 2007-12-28 | 2012-03-21 | Ind Tech Res Inst | Thermoelectric device with thin film elements, app |
EP2147674A1 (en) * | 2008-07-24 | 2010-01-27 | Besins Healthcare | Transdermal pharmaceutical compositions comprising danazol |
CN102203974A (zh) * | 2008-10-29 | 2011-09-28 | 皇家飞利浦电子股份有限公司 | 双栅极场效应晶体管和生产双栅极场效应晶体管的方法 |
KR20100091663A (ko) * | 2009-02-11 | 2010-08-19 | 삼성전자주식회사 | 표면개질제, 이를 사용하여 제조된 적층 구조, 그 구조의 제조방법 및 이를 포함하는 트랜지스터 |
DE102009023350A1 (de) * | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements |
US20120112830A1 (en) * | 2010-11-04 | 2012-05-10 | Ludwig Lester F | Towards the very smallest electronic circuits and systems: transduction, signal processing, and digital logic in molecular fused-rings via mesh ring-currents |
US8647535B2 (en) | 2011-01-07 | 2014-02-11 | International Business Machines Corporation | Conductive metal and diffusion barrier seed compositions, and methods of use in semiconductor and interlevel dielectric substrates |
CN103361704B (zh) * | 2013-07-22 | 2015-08-19 | 兰州理工大学 | 铜离子电化学掺杂聚苯胺材料的制备方法及用途 |
CN108864186B (zh) * | 2018-07-11 | 2021-02-09 | 深圳大学 | 一种有机膦酸酯、有机膦酸及其制备方法与应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4200474A (en) * | 1978-11-20 | 1980-04-29 | Texas Instruments Incorporated | Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS device fabrication |
EP0477515A1 (en) * | 1990-09-06 | 1992-04-01 | Motorola, Inc. | Heterojunction field effect transistor with monolayer in channel region |
CN1293825A (zh) * | 1998-01-16 | 2001-05-02 | 薄膜电子有限公司 | 场效应晶体管 |
CN1301400A (zh) * | 1998-04-16 | 2001-06-27 | 剑桥显示技术有限公司 | 聚合物器件 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766990B2 (ja) * | 1988-07-15 | 1995-07-19 | 松下電器産業株式会社 | 有機デバイスおよびその製造方法 |
JP2813428B2 (ja) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
US6326640B1 (en) * | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
KR100462712B1 (ko) * | 2000-08-10 | 2004-12-20 | 마쯔시다덴기산교 가부시키가이샤 | 유기전자장치와 그 제조방법과 그 동작방법 및 그것을 사용한 표시장치 |
EP1434282A3 (en) * | 2002-12-26 | 2007-06-27 | Konica Minolta Holdings, Inc. | Protective layer for an organic thin-film transistor |
US7132680B2 (en) * | 2003-06-09 | 2006-11-07 | International Business Machines Corporation | Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
US6989290B2 (en) * | 2003-11-15 | 2006-01-24 | Ari Aviram | Electrical contacts for molecular electronic transistors |
-
2003
- 2003-06-09 US US10/456,749 patent/US7132680B2/en not_active Expired - Fee Related
-
2004
- 2004-06-03 CN CNB2004100484383A patent/CN100452472C/zh not_active Expired - Fee Related
-
2006
- 2006-01-11 US US11/329,072 patent/US7301183B2/en not_active Expired - Fee Related
-
2007
- 2007-10-17 US US11/873,486 patent/US7776646B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4200474A (en) * | 1978-11-20 | 1980-04-29 | Texas Instruments Incorporated | Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS device fabrication |
EP0477515A1 (en) * | 1990-09-06 | 1992-04-01 | Motorola, Inc. | Heterojunction field effect transistor with monolayer in channel region |
CN1293825A (zh) * | 1998-01-16 | 2001-05-02 | 薄膜电子有限公司 | 场效应晶体管 |
CN1301400A (zh) * | 1998-04-16 | 2001-06-27 | 剑桥显示技术有限公司 | 聚合物器件 |
Also Published As
Publication number | Publication date |
---|---|
CN1612372A (zh) | 2005-05-04 |
US20040245550A1 (en) | 2004-12-09 |
US20080087885A1 (en) | 2008-04-17 |
US7132680B2 (en) | 2006-11-07 |
US7776646B2 (en) | 2010-08-17 |
US7301183B2 (en) | 2007-11-27 |
US20060108582A1 (en) | 2006-05-25 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171122 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171122 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20190603 |