CN100452944C - Plasma processing device - Google Patents

Plasma processing device Download PDF

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Publication number
CN100452944C
CN100452944C CNB2006100032188A CN200610003218A CN100452944C CN 100452944 C CN100452944 C CN 100452944C CN B2006100032188 A CNB2006100032188 A CN B2006100032188A CN 200610003218 A CN200610003218 A CN 200610003218A CN 100452944 C CN100452944 C CN 100452944C
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China
Prior art keywords
bottom electrode
plasma processing
processing equipment
coolant
channel
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CNB2006100032188A
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CN1812682A (en
Inventor
李荣钟
崔浚泳
孙亨圭
李祯彬
李昌根
高英培
金春植
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ADP Engineering Co Ltd
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ADP Engineering Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

The present invention discloses a kind of plasma processing device, which implements predetermined processing to a substrate using plasma, the plasma generates in a cavity which is limited in the plasma processing device and keeps vacuum. The plasma processing device includes a cooler to cool a electrode unit contained in the plasma processing device effectively so as to process large-area substrate uniformly.

Description

Plasma processing equipment
Technical field
[1] the present invention relates to a kind of plasma processing equipment, its by result from one in the chamber that remains under the vacuum state plasma and substrate is carried out a predetermined processing.
Background technology
[2] in the process of making semiconductor equipment, LCD etc., mainly use plasma processing equipment to utilize plasma that substrate surface is processed.For so a kind of plasma processing equipment, for example there is one to be used at the plasma etching apparatus that carries out etching and processing on the substrate and a plasma chemical vapor deposition equipment that is used on substrate, carrying out a chemical vapor deposition (CVD).
[3] figure 1 illustrates an example of this plasma processing equipment.The plasma processing equipment that indicates with reference number " 1 " in Fig. 1 comprises two plane electrodes 10 and 20, and these two electrodes are horizontal-extending and facing with each other on perpendicular system direction abreast.Substrate S is loaded on electrode 10 and 20 lower those, promptly is loaded on the electrode 20.Correspondingly, be called " substrate load mould " than low electrode 20.
[4] promote pin (not shown) and outer lifting arm (not shown) in plasma processing equipment 1 also includes, the process that substrate load is taken out to plasma processing equipment 1 substrate inner or that will load from plasma processing equipment 1 inside, to play booster action.The interior extensible through hole that passes of pin---this through hole passes the edge of bottom electrode 20 and forms---that promotes makes described interior the lifting sell and can vertically move.
[5] outer lifting arm is arranged on the outside of bottom electrode 20.That is to say that outer lifting arm is provided with in the space between the madial wall of a side that is defined in bottom electrode 20 and plasma processing equipment 1, make described can vertically moving.Certainly, in some cases, can just can not realize sending into of substrate by outer lifting arm.
[6] plasma processing equipment 1 also comprises an exhaust unit 40, and it is used for the inside of emptying plasma processing equipment 1.Exhaust unit 40 aspirates by a pump that is arranged on plasma processing equipment 1 outside and is present in plasma processing equipment 1 gas inside, and outwards discharges the gas that is aspirated, so that the inside of plasma processing equipment 1 is remained on vacuum state.
[7] top electrode 10 is arranged to face mutually vertically with bottom electrode 20.Top electrode 10 not only has the function of electrode, and the function that also has process gas supplier is to be fed to processing gas between top electrode 10 and the bottom electrode 20.For this reason, a shower nozzle 12 is attached to the lower end of top electrode 10, as shown in Figure 1.Shower nozzle 12 is provided with the very little processing gas diffusion hole 14 of a plurality of diameters.Correspondingly, processing gas can be supplied to the space that is limited between electrode 10 and 20 equably by shower nozzle 12.When applying high frequency electric source between electrode 10 and 20, the processing gas that is supplied between electrode 10 and 20 is transformed into plasma, and described plasma is used to again the substrate surface that is exposed to this plasma is processed.
[8] need the substrate S of processing to be arranged on the bottom electrode 20, and process by plasma.Because plasma is formed at the inside of plasma processing equipment 1, promptly in chamber, the internal temperature in described chamber has raise, and this may influence just processed substrate S.For this reason, refrigerant circulation passage 30 is passed bottom electrode 20 and is formed, and makes to be elevated on the predetermined temperature with the temperature that prevents substrate S in the course of processing of substrate S in the refrigerant circulation passage 30 whole zone of extend through bottom electrode 20 flatly.Cold-producing medium is supplied in the refrigerant circulation passage 30 by a refrigerant cycle device (not shown) that is arranged on plasma processing equipment 1 outside, makes the cold-producing medium of being supplied circulate in described refrigerant circulation passage 30.Correspondingly, the temperature of bottom electrode 20 is remained on the predetermined temperature by the cold-producing medium of circulation in described refrigerant circulation passage 30.Thereby the substrate S that is arranged on the bottom electrode 20 remains on the predetermined temperature.
[9] similarly, refrigerant circulation passage 16 is passed top electrode 10 and is formed, and makes refrigerant circulation passage 16 flatly extend in the whole zone of top electrode 10.End in refrigerant circulation passage 16 is provided with a refrigerant inlet, and is provided with a refrigerant outlet at its other end.The cold-producing medium that comes from the refrigerant cycle device imports in the refrigerant circulation passage 16 by refrigerant inlet, and is cycling through refrigerant circulation passage 16 after got back in the refrigerant cycle device by refrigerant outlet.Because temperature can raise in the plasma forming process, refrigerant circulation passage 16 has prevented that processing that plasma processing equipment 1 is carried out is subjected to the Temperature Influence of shower nozzle 12.
[10] simultaneously, under conventional situation, side in the refrigerant circulation passage 30 of bottom electrode 20 is provided with a refrigerant inlet 32 and a refrigerant outlet 34, and these two ports are arranged on the same side of refrigerant circulation passage 30 but separate a very big distance each other.Because refrigerant inlet 32 and refrigerant outlet 34 separate a very big distance each other, extended in the refrigeration path in the bottom electrode 20.Thus, difference is very big each other near refrigerant temperature the refrigerant inlet 32 and near the refrigerant temperature the refrigerant outlet 34.That is to say that the temperature of the cold-producing medium of discharging is higher than the temperature of cold-producing medium in importing to refrigerant circulation passage 30 time significantly from refrigerant circulation passage 30 after by refrigerant circulation passage 30.In fact, be 35 ℃ in the temperature of refrigerant inlet 32 sides, and be 40 ℃ in the temperature of refrigerant outlet 34 sides.When having formed such temperature difference in electrode 20, the efficiency of transmission of high frequency electric source has reduced.In this case, the etched speed and the etched uniformity all can be adversely affected.Thus, the repeatability of processing may reduce.
[11] especially, compare with the neighboring area of electrode 20, it is quite tangible that the temperature that the zone line of electrode 20 is taken place in the course of processing raises.Therefore, also need to eliminate because the temperature contrast in electrode 20 that this phenomenon causes.
[12] simultaneously, the employed electrode size of the plasma processing equipment that latest developments are got up has increased, so that large-area substrate is processed.Relevant with this plasma processing equipment, owing to extended in the refrigeration path in the plasma processing equipment, above-mentioned problem becomes even more serious.
Summary of the invention
[13] therefore, the purpose of this invention is to provide a kind of plasma processing equipment, it comprises a cooler, and this cooler can all remain on the Zone Full that is included in an electrode in the plasma processing equipment on the preferred temperature.
[14] according to an aspect, the invention provides a kind of plasma processing equipment that is used for substrate is carried out a predetermined processing, its use results from a cavity---described cavity is defined in the plasma processing equipment and remains under the vacuum state---interior plasma, described plasma processing equipment comprises: an electrode unit, a shower nozzle, and cooler, described electrode unit includes a top electrode and bottom electrode that is separately positioned on described cavity upper and lower, and can apply high frequency electric source to described cavity, described shower nozzle is arranged on the top electrode below, and combine with the top electrode circumferential edge, and the lower surface of the utmost point is down given prominence to from power on, so that a processing gas to be provided in cavity, described cooler carries out refrigerant cycle in top electrode or bottom electrode, so that top electrode or bottom electrode are cooled off, wherein, described cooler comprises a plurality of refrigerant circulation passage that are formed in top electrode or the bottom electrode, and refrigerant cycle device, described refrigerant circulation passage makes each refrigerant circulation passage extend in a plane parallel with the primary flat of top electrode or bottom electrode, described refrigerant cycle device is used to make cold-producing medium to circulate in refrigerant circulation passage, and wherein each refrigerant circulation passage all has a refrigerant inlet and refrigerant outlet that is arranged on top electrode or bottom electrode zone line place.
[15] according to another aspect, the invention provides a kind of plasma processing equipment that is used for substrate is carried out a predetermined processing, its use results from a cavity---described cavity is defined in the plasma processing equipment and remains on vacuum state---interior plasma, described plasma processing equipment comprises: a bottom electrode, a coldplate, and cooling water pipe, described bottom electrode is arranged on the bottom in described chamber, and be mounted with substrate thereon, described coldplate is arranged to contact with the lower surface of bottom electrode and bottom electrode is cooled off, described cooling water pipe is arranged between bottom electrode and the coldplate, wherein defines a passage and makes coolant to circulate in cooling water pipe.
[16] according to another aspect, the invention provides a kind of plasma processing equipment that is used for substrate is carried out a predetermined processing, its use results from cavity---described cavity is defined in the plasma processing equipment and remains on vacuum state---interior plasma, described plasma processing equipment comprises: a bottom electrode, a coldplate, and containment member, described bottom electrode is arranged on the bottom of described cavity, and be mounted with substrate thereon, described coldplate is arranged to contact with the lower surface of bottom electrode and bottom electrode is cooled off, and be provided with a plurality of recesses with preset width and desired depth, thereby define a plurality of coolant guiding channels, described containment member is arranged between the contact surface of bottom electrode and coldplate around coolant guiding channel respectively, wherein each coolant guiding channel all has the cross sectional shape of a rectangle, makes the coolant coldplate of can high flow rate flowing through.
[17] according to another aspect, the invention provides a kind of plasma processing equipment that is used for substrate is scheduled to processing, its use results from cavity---described cavity is defined in the plasma processing equipment and remains on vacuum state---interior plasma, described plasma processing equipment comprises: a bottom electrode, a coldplate, containment member, and heat transfer medium, described bottom electrode is arranged on the bottom of described cavity, and be mounted with substrate thereon, described coldplate is arranged to contact with the lower surface of bottom electrode and bottom electrode is cooled off, and be provided with a plurality of being formed in the coldplate, coolant guiding channel with rectangular cross sectional shape, described containment member is bonded on respectively in the gap between the contact surface that is defined in bottom electrode and coolant guiding channel, and around described coolant guiding channel, in this gap, to limit seal cavity, heat transfer medium with high conductive coefficient is packed in the sealing space, to improve the heat transfer efficiency of bottom electrode to coldplate.
[18] according to another aspect, the invention provides a kind of plasma processing equipment that is used for substrate is carried out a predetermined processing, the plasma that its use results from a cavity---described cavity is defined in the plasma processing equipment and remains on vacuum state---, described plasma processing equipment comprises: a bottom electrode and a temperature adjusting plate, described bottom electrode is arranged on the bottom in described chamber and is mounted with substrate thereon, described temperature adjusting plate is arranged to contact with bottom electrode, and being provided with one is used to cool off or heat medium, the circulation line that in temperature adjusting plate, extends, wherein, described temperature adjusting plate forms in this wise: prepare a preformed member that is used to form circulation line and is made by low melting material, preformed member is arranged in the mould, with make described preformed member be embedded in the ceramic powders with the ceramic powder filled mould, and sintering ceramic powder, thereby described preformed member fusing makes and stays next space and form circulation line in the ceramic body that sintering is crossed in the position of preformed member when forming a sintered ceramic body.
[19] according to another aspect, the invention provides a kind of plasma processing equipment that is used for substrate is carried out a predetermined processing, its use results from a cavity---described cavity is defined in the plasma processing equipment and remains on vacuum state---interior plasma, described plasma processing equipment comprises: bottom electrode, shower nozzle, upper support member and refrigerant line; Described bottom electrode is arranged on the bottom in described chamber and is mounted with substrate thereon, described shower nozzle comprises a plurality of being used for towards the outlet of substrate supply processing gas and the coolant channel that at least one is formed at shower nozzle, described upper support member is arranged on the top of shower nozzle, and be provided with a processing gas passage that is connected with the shower nozzle outlet, also be provided with through hole; Described refrigerant line extends through the through hole of upper support structure and is connected with the coolant channel of shower nozzle, and the peripheral surface with respective through hole radially separates a predetermined distance simultaneously.
Description of drawings
[20] by reading detailed description hereinafter, simultaneously with reference to accompanying drawing, above-mentioned purpose of the present invention and other feature and advantage will become more obvious, wherein;
[21] Fig. 1 is a cutaway view, and it shows the plasma processing equipment of a routine;
[22] Fig. 2 is a stereogram, and it shows the bottom electrode and the refrigerant circulation passage that is formed in the described bottom electrode that are included in a conventional plasma processing equipment;
[23] Fig. 3 is a cutaway view, and it shows a plasma processing equipment according to first embodiment of the invention;
[24] Fig. 4 is a cutaway view, and it shows the example setting according to the refrigerant circulation passage of first embodiment of the invention;
[25] Fig. 5 is a cutaway view, and it shows another example setting according to the refrigerant circulation passage of first embodiment of the invention;
[26] Fig. 6 is a cutaway view, and it shows another example setting according to the refrigerant circulation passage of first embodiment of the invention;
[27] Fig. 7 is a cutaway view, and it shows another example setting according to the refrigerant circulation passage of first embodiment of the invention;
[28] Fig. 8 is a cutaway view, and it shows a part according to the plasma processing equipment of second embodiment of the invention;
[29] Fig. 9 is a schematic vertical view, and it shows one and is included in according to the cooling water pipe in the plasma processing equipment of second embodiment of the invention;
[30] Figure 10 is a cutaway view, and it shows a part according to the plasma processing equipment of third embodiment of the invention;
[31] Figure 11 is a schematic vertical view, and it shows one and is included in according to the coldplate in the plasma processing equipment of third embodiment of the invention;
[32] Figure 12 is a cutaway view, and it shows a part according to the plasma processing equipment of four embodiment of the invention;
[33] Figure 13 is the vertical view of a signal, and it shows one and is included in according to the coldplate in the plasma processing equipment of four embodiment of the invention;
[34] Figure 14 a is an exploded perspective view, and it shows one and is included in according to the electrode unit in the plasma processing equipment of fifth embodiment of the invention;
[35] Figure 14 b is a cutaway view, and it shows the electrode unit among Figure 14 a;
[36] Figure 15 is a stereogram, and it shows a preformed member that is used to form according to the medium circulation pipeline of fifth embodiment of the invention;
[37] Figure 16 is a stereogram, and it shows a temperature adjusting plate according to fifth embodiment of the invention, is formed with the medium circulation pipeline on this temperature adjusting plate;
[38] Figure 17 is a flow chart, and it shows a kind of method that is used to make according to the temperature adjusting plate of fifth embodiment of the invention;
[39] Figure 18 is a cutaway view, and it shows a plasma processing equipment according to sixth embodiment of the invention;
[40] Figure 19 a is a vertical view, and it shows a refrigeration path that is included in according to a shower nozzle in the plasma processing equipment of sixth embodiment of the invention and a described shower nozzle and is provided with;
[41] Figure 19 b is a vertical view, and it shows one and is included in according to the shower nozzle in the plasma processing equipment of sixth embodiment of the invention, the refrigeration path of described shower nozzle be provided with Figure 19 a in different.
Embodiment
[42] hereinafter, with reference to the accompanying drawings example embodiment of the present invention is described.
First execution mode
[43] with reference to Fig. 3, it shows a plasma processing equipment 100 according to first embodiment of the invention.Plasma processing equipment 100 comprises a top electrode 110, bottom electrode 120, a shower nozzle 112 and a cooler.Because the 26S Proteasome Structure and Function of top electrode 110, bottom electrode 120 and shower nozzle 112 is identical with conventional plasma processing equipment 1, will be no longer described.
[44] similar according to the cooler and the conventional cooler of this execution mode, this cooler is used to make refrigerant cycle to pass through top electrode 110 or bottom electrode 120 cools off top electrode 110 or bottom electrode 120.Yet, according to the structure of the cooler of this execution mode and conventional cooler with to be provided be different.Cooler according to this execution mode comprises a plurality of refrigerant circulation passage 132 that are formed in the bottom electrode 120, makes each refrigerant circulation passage 132 extend in a plane that is parallel to bottom electrode 120 primary flats, and promptly along continuous straight runs extends.Cooler also comprises a refrigerant cycle device (not shown), and this refrigerant cycle device makes refrigerant cycle pass through refrigerant circulation passage 132.As shown in Figure 3, refrigerant circulation passage 132 is arranged in the bottom electrode 120 independently.According to this setting, to compare with conventional situation, the length of each refrigerant circulation passage 132 has reduced.Thus, compare with conventional situation, the refrigerant path that is limited by refrigerant circulation passage 132 has shortened.Accordingly, the refrigerant temperature that has greatly reduced between refrigerant inlet and the refrigerant outlet is poor, and in conventional situation, this temperature difference can be 5 ℃ or bigger.
[45] each refrigerant circulation passage 132 all has a refrigerant inlet 134 and a refrigerant outlet 136, and with different in the conventional situation, described refrigerant inlet and refrigerant outlet are arranged on the central region of bottom electrode 120.The reason that refrigerant inlet 134 and refrigerant outlet 136 is arranged on bottom electrode 120 central region places is: offseted the big temperature difference between the peripheral part of the central region that is present in bottom electrode 120 in the plasma process process and bottom electrode 120.---it is as minimum part of the refrigerant temperature of refrigerant circulation passage 132---is arranged on the central region of bottom electrode 120 to that is to say refrigerant inlet 134, to reduce the temperature of bottom electrode 120 central region.
[46], can there be three types about the setting of refrigerant circulation passage 132 in bottom electrode 120.This will be described below.
[47] at first, have such one type, wherein refrigerant circulation passage 132 is arranged on the opposite side of bottom electrode 120 center C, promptly is arranged on the left part and the right part of bottom electrode 120.In order to make independently cold-producing medium stream each refrigerant circulation passage 132 of can flowing through, each refrigerant circulation passage 132 all has a refrigerant inlet and a refrigerant outlet.This type illustrates among Fig. 4.In the situation of Fig. 4, two independently refrigerant circulation passage 132a and 132b be arranged on the left part and the right part of bottom electrode 120, make independently cold-producing medium stream can flow through corresponding refrigerant circulation passage 132a and 132b.For the stream of cold-producing medium independently, refrigerant circulation passage 132a and 132b are provided with refrigerant inlet 134a and 134b and separately refrigerant outlet 136a and 136b separately.In this case, preferably, corresponding refrigerant inlet 134a and 134b and corresponding refrigerant outlet 136a and 136b diagonal angle setting Face to face, rather than located adjacent one another the setting.
That is to say that [48] preferably, corresponding refrigerant inlet 134a and 134b and corresponding refrigerant outlet 136a and 136b are symmetrical arranged with respect to the center C of bottom electrode 120 and face with each other. Refrigerant inlet 134a and 134b or refrigerant outlet 136a and 136b in the face of the reason that is provided with are diagonally: prevent being provided with refrigerant inlet 134a and 134b or being provided with on the zone of refrigerant outlet 136a and 136b because between refrigerant inlet 134a and the 134b or the cause of the temperature difference between refrigerant outlet 136a and the 136b and form a temperature difference at bottom electrode.That is to say that the temperature that bottom electrode 120 raises because of refrigerant outlet 136a and 136b is reduced by refrigerant inlet 134a and 134b, makes bottom electrode 120 remain on the desired temperatures.
[49] second, there is such one type, wherein a plurality of refrigerant circulation passage 132 are arranged on two layers of bottom electrode 120, make each be in a refrigerant circulation passage 132 and the corresponding refrigerant circulation passage 132 that is in another layer in the layer and extend abreast.This type is shown among Fig. 5.Under the situation of Fig. 5, two refrigerant circulation passage 132a and 132b are arranged to extend parallel to each other, and be simultaneously reverse each other.At this, " oppositely " is provided with and means so a kind of setting: wherein the corresponding refrigerant inlet 134a of refrigerant circulation passage 132a and 132b and 134b and corresponding refrigerant outlet 136a and 136b are not arranged to located adjacent one another, on the contrary, the refrigerant inlet 134a of refrigerant circulation passage 132a or 132b or refrigerant outlet 136b or the 136a of 134b and another refrigerant circulation passage 132b or 132a are located adjacent one another, make that the flow direction of the cold-producing medium stream in the refrigerant circulation passage is opposite each other.Shown in situation in, refrigerant inlet 134a and 134b and refrigerant outlet 136a and 136b are arranged on the fringe region of bottom electrode 120.Yet refrigerant inlet 134a and 134b and refrigerant outlet 136a and 136b can be arranged on the zone line of bottom electrode 120, to prevent a forming temperature difference between the zone line of bottom electrode 120 and fringe region.
[50] the 3rd, there is such one type, wherein a plurality of refrigerant circulation passage 132 are arranged to two-layer in bottom electrode 120, make that they all are arranged on the left side and the right side of bottom electrode 120 symmetrically in each layer, and each refrigerant circulation passage 132 in a layer is extended abreast with the corresponding refrigerant circulation passage 132 in another layer.This type is illustrated among Fig. 6.In situation shown in Figure 6, in two layers, be provided with four refrigerant circulation passage 132a to 132d, make that two refrigerant circulation passage 132a and 132b (132c and 132d) are arranged on the left side and the right side of bottom electrode 120 respectively symmetrically in each layer.In this case, preferably, each the refrigerant circulation passage 132a on upper strata or the corresponding refrigerant circulation passage 132c or the 132d of 132b and lower floor extend abreast, simultaneously, the refrigerant inlet 134c of refrigerant inlet 134a or 134b and refrigerant outlet 136a or 136b and corresponding refrigerant circulation passage 132c or 132d or 134d and refrigerant outlet 136c or 136d oppositely are provided with.Be provided with according to this, can remain on the whole zone of bottom electrode 120 on the desired temperatures.
[51] in the third type, more preferably, be arranged on refrigerant circulation passage 132c and the 132d in the lower floor and the refrigerant circulation passage 132a and the 132b that are arranged in the upper strata extend orthogonally, as shown in Figure 7.At length, the main part of the main part of refrigerant circulation passage 132c and 132d and refrigerant circulation passage 132a and 132b is extended orthogonally.In this case, can remain on the whole zone of bottom electrode 120 on the desired temperatures the whole zone of bottom electrode 120 because cold-producing medium can be flowed through equably.
[52] in the situation of the third type, be arranged in the whole zone that refrigerant circulation passage 132a in the upper strata and 132b can be distributed in bottom electrode 120, and the refrigerant circulation passage 132c and the 132d that are arranged in the lower floor can be distributed in the zone line of bottom electrode 120.Being arranged on the reason that refrigerant circulation passage 132c in the lower floor and 132d be distributed in the zone line of bottom electrode 120 is: prevent that the temperature of bottom electrode 120 zone lines is higher than the temperature of bottom electrode 120 fringe regions.In this case, correspondingly, determine the setting of refrigerant circulation passage 132 in bottom electrode 120, make the density of the refrigerant circulation passage in bottom electrode 120 zone lines greater than the density of the refrigerant circulation passage in bottom electrode 120 fringe regions, make it identical with the temperature of bottom electrode 120 fringe regions with the temperature of the zone line that keeps bottom electrode 120.Certainly, the refrigerant circulation passage 132a and the 132b that are arranged in the upper strata can be distributed in the zone line of bottom electrode 120, and are arranged on the refrigerant circulation passage 132c of lower floor and the whole zone that 132d can be distributed in bottom electrode 120.
Second execution mode
[53] with reference to Fig. 8, it shows a plasma processing equipment according to second embodiment of the invention.Though do not have shown in Figure 8, this plasma process equipment comprise a processing cavity identical, top electrode that is arranged on processing cavity top with above-mentioned conventional processing cavity structure with the gas blowing of needs is gone in the processing cavity and electrode unit that one is arranged on the processing cavity bottom so that this electrode unit facing to described top electrode.The substrate load of a needs processing is on electrode unit.Power supply is supplied on the described electrode unit.As shown in Figure 8, electrode unit comprises a substrate.Electrode unit also comprises an insulator arrangement, a coldplate 216 and a bottom electrode 214, and these insulator arrangements, coldplate and bottom electrode are laminated on the substrate in this order.Insulation board 222 is installed on the electrode unit, makes insulation board 222 around the marginal portion of the edge surface and the electrode unit end face of electrode unit, is subjected to the effect of plasma to prevent electrode unit.
[54] cooling water pipes 230 are arranged between bottom electrode 214 and the coldplate 216.A kind of coolant---for example cold-producing medium---is flowed through coldplate 216 circularly and is formed a coolant path.
[55] as shown in Figure 8, on the lower surface of bottom electrode 214, be formed with a tube seat 215, to be used for the first half of ccontaining cooling water pipe 230.The cross section of tube seat 215 can be semicircle or rectangle.
[56] similar, be formed with a tube seat 217 at the contacted upper surface of the lower surface place of coldplate 216 and bottom electrode 214, to be used for the latter half of ccontaining cooling water pipe 230.The cross section of tube seat 217 can be semicircle or rectangle.
[57] as shown in Figure 9, cooling water pipe 230 comprises the transverse pipe member of an a pair of spaced apart each other preset distance, and a plurality of be arranged between the described transverse pipe member opposite end, and be evenly spaced apart each other and the vertical pipe component that between the transverse pipe member, extend of pipe component transversely.Cooling water pipe 230 also comprises the inlet tube member and the outlet member that is connected in another transverse pipe member middle part that are connected in one of transverse pipe member middle part.Each vertical pipe component is connected on the corresponding transverse pipe member by for example welding hermetically at its place, relative end.
[58] cooling water pipe 230 directly contacts with coldplate 216 with bottom electrode 214.Correspondingly, bottom electrode 214 is not indirectly by coldplate 216 cooling, but by directly cooling off with cooling water pipe 230 that bottom electrode 214 directly contacts.
[59] cooling water pipe 230 can have different shapes, and is not limited to shown in the execution mode.
[60] thereby, be arranged on cooling water pipe 230 between bottom electrode 214 and the coldplate 216 by coolant is flowed through and realize the cooling of bottom electrode 214, described bottom electrode 214 is included in the electrode unit according to the plasma processing equipment of second embodiment of the invention, and on this bottom electrode 214, be mounted with the substrate that needs processing, shown in Fig. 8 and 9.Coolant imports in the cooling water pipe 230 by the inlet tube member that is connected with one of transverse pipe member, then vertical pipe component of flowing through and extending orthogonally with the transverse pipe member in the mode of bypass.
[61] therefore, the coolant stream of discharging from vertical pipe component imports to another transverse pipe member, makes these coolant streams merge together.The coolant that is obtained is discharged cooling water pipe 230 by the outlet member then.According to the circulation of coolant in cooling water pipe 230, prevented that the temperature in the bottom electrode 214 from raising, thereby and the temperature of bottom electrode 214 remained on the preferred temperature.According to this execution mode, tube seat 215 and 217 is formed on the contact-making surface of bottom electrode 214 and coldplate 216 respectively.Cooling water pipe 230 is assemblied between tube seat 215 and 217, makes the outer surface of cooling water pipe 230 contact with 217 with tube seat 215.Correspondingly, the contact area between bottom electrode 214 and the coldplate 216 has increased, thereby has increased the coefficient of overall heat transmission between bottom electrode 214 and the coldplate 216 by cooling water pipe 230.Thus, promptly realized heat balance between bottom electrode 214 and the coldplate 216.Thereby, obtained the cooling effect an of the best.
[62] can find out significantly from description above, according to second execution mode of the present invention, heat conduction between bottom electrode 214 and the coldplate 216 is undertaken by cooling water pipe 230, and the upper and lower of cooling water pipe 230 directly contacts with coldplate 216 with bottom electrode 214 respectively.Thus, promptly realized heat balance between bottom electrode 214 and the coldplate 216.Thereby, obtained the cooling effect an of the best.
The 3rd execution mode
[63] with reference to Figure 10, it shows a plasma processing equipment according to third embodiment of the invention.Though do not have shown in Figure 10, this plasma process equipment comprise top electrode that a processing cavity, one be arranged on processing cavity top with the gas blowing of needs is gone in the processing cavity and electrode unit that one is arranged on the processing cavity bottom so that this electrode unit facing to described top electrode.The substrate load of a needs processing is on electrode unit.Power supply is supplied to described electrode unit.
[64] as shown in figure 10, electrode unit comprises a substrate 320.Electrode unit also comprises an insulator arrangement 318, a coldplate 316 and a bottom electrode 314, and these insulator arrangements, coldplate and bottom electrode are laminated on the substrate 320 in this order.Insulation board 322 is installed on the electrode unit, makes insulation board 322 hold the marginal portion of the edge surface and the electrode unit end face of electrode unit, is subjected to isoionic effect to prevent electrode unit.Because the structure of above-mentioned electrode unit and the structure of the electrode unit under the above-mentioned conventional situation are identical, and have identical functions, so no longer it is further described.
[65] as shown in figure 11, coldplate 316 has the platy structure of a predetermined thickness.A plurality of recesses with desired depth are formed in the coldplate 316, make each recess extend between the surface of the relative longer side of coldplate 316, to limit a plurality of coolant guiding channels 317.Each recess all enlarges respectively at its place, relative end, to be formed for an inlet and an outlet of corresponding coolant guiding channel 317.
[66] members 324 that prevent that eddy current from forming are arranged on the porch of each coolant guiding channel 317, to prevent that coolant forms eddy current when coolant imports in the coolant guiding channel 317 by inlet.When coolant when preventing that eddy current from forming member 324, it is transformed into turbulent flow and forms a barometric gradient.Correspondingly, the flow rate of coolant has increased, thereby has improved cooling effectiveness.Prevent that eddy current from forming member 324 and can have a netted structure.
[67] prevent that eddy current from forming member 324 and having postponed coolant stream and be directed in the corresponding coolant guiding channel 317, thereby make the coolant coolant guiding channel 317 of flowing through equably.
[68] though do not illustrate, connecting tube is connected to the entrance and exit of each coolant guiding channel 317 respectively, so that coolant is supplied into coolant guiding channel 317 from the outside of plasma processing equipment, then coolant is discharged coolant guiding channel 317.The cross sectional shape of connecting tube is consistent with the cross sectional shape of entrance and exit respectively.The cross sectional shape of connecting tube can be a rectangle.In this case, compare for circular connecting tube with cross sectional shape, the area of section of connecting tube is bigger.Correspondingly, in this example, the flow rate of coolant has increased, thereby has improved cooling effectiveness.
[69] guide member 317a are arranged on the zone line place of each coolant guiding channel 317, make guide member 317a and coolant guiding channel 317 extend abreast.The guide member 317a guiding coolant coolant guiding channel 317 of flowing through is kept its desired streamlined flow direction simultaneously.
[70] because each coolant guiding channel 317 all has the cross sectional shape of a rectangle, the area of cooling medium flowing is very big in coolant guiding channel 317, thereby has improved cooling effectiveness.
[71] each coolant guiding channel 317 can have different shapes, and be not restricted to shown in the illustrated embodiment, as long as the sectional area of the coolant guiding channel 317 that can obtain to increase.
[72], between the upper surface of the lower surface of bottom electrode 314 and coldplate 316, be respectively arranged with containment member O, so that a sealing effectiveness to be provided in the relative both sides of each coolant guiding channel 317.
[73] thereby, circulating in coolant guiding channel 317 by coolant---described coolant guiding channel is limited to the upper surface of the coldplate 316 that contacts with the lower surface of bottom electrode 314 by the recess of the upper surface that is formed at coldplate 316, thereby realized the cooling of bottom electrode 314, described bottom electrode 314 is included in the electrode unit according to the plasma processing equipment of third embodiment of the invention, and on this bottom electrode 314, be mounted with the substrate that needs processing, shown in Figure 10 and 11.Each coolant guiding channel 317 all has the shape of a rectangle, thereby makes that the area of section of coolant guiding channel 317 is very big.Correspondingly, the area of cooling medium flowing is also very big in coolant guiding channel 317, thereby has improved cooling effectiveness.
[74] coolant---its state can be liquid or gas---is from the outside supply of plasma processing equipment, it imports the coolant guiding channel 317 that is arranged in the processing cavity (not shown) by connecting tube, and described connecting tube is connected to the inlet of coolant guiding channel 317 accordingly.Coolant by one be arranged on coolant guiding channel 317 porch prevent that eddy current from forming member 324 time be transformed into a turbulent flow, and can not form eddy current.
[75] because coolant has been transformed into a turbulent flow, in coolant, formed a barometric gradient.Thus, the flow rate of coolant has increased.Behind the coolant guiding channel 317 of flowing through quickly, coolant has arrived the outlet of coolant guiding channel 317.Coolant is discharged coolant guiding channel 317 then, thereby discharges processing cavity, flows into the connecting tube that is connected respectively to coolant guiding channel 317 exits, forms member 324 by an eddy current that prevents that is arranged on the exit simultaneously.When coolant by this outlet side prevent that eddy current from forming member 324 time, coolant can be discharged more at high speed.Though do not illustrate, a pump is connected to this connecting tube.
[76] because guide member 317a is arranged on the zone line place of each coolant guiding channel 317, make guide member 317a and coolant guiding channel 317 extend abreast, so coolant is subjected to guiding ground by coolant guiding channel 317, has kept desired streamlined flow direction simultaneously.
[77] coldplate 316---its lower surface with the bottom electrode 314 that is mounted with a substrate contacts and bottom electrode 314 is cooled off---, and cool off by the circulation of coolant in coolant guiding channel 317, described coolant guiding channel 317 is limited to the upper surface of coldplate 316.In fact, because the coolant guiding channel 317 of each coldplate 316 has an area of section that has increased, so the amount of the coolant that is circulated has increased.Thus, promptly realized heat balance between bottom electrode 314 and the coldplate 316.Thereby, obtained the cooling effectiveness an of the best.
[78] that is to say, according to the 3rd execution mode of the present invention, the coolant guiding channel 317 that area of section is very big is formed on coldplate 316 and the contact surface that bottom electrode 314 contacts, increase the flow rate that is circulated in the coolant in the coldplate 316, also increased the circulation rate of coolant simultaneously.Thereby, obtained the cooling effect an of the best.
The 4th execution mode
[79] with reference to Figure 12, it shows a plasma processing equipment according to four embodiment of the invention.Though do not have shown in Figure 12, this plasma process equipment comprise top electrode that a processing cavity, one be arranged on processing cavity top with the gas blowing of needs is gone in the processing cavity and electrode unit that one is arranged on the processing cavity bottom so that this electrode unit facing to described top electrode.The substrate load of a needs processing is on electrode unit.Power supply is supplied to described electrode unit.
[80] as shown in figure 12, electrode unit comprises a substrate 420.Electrode unit also comprises an insulator arrangement 418, a coldplate 416 and a bottom electrode 414, and this sequential layer of these insulator arrangements, coldplate and bottom electrode is pressed on the substrate 420.Insulation board 422 is installed on the electrode unit, makes insulation board 422 hold the marginal portion of the edge surface and the electrode unit end face of electrode unit, is subjected to the effect of plasma to prevent electrode unit.Because the structure of above-mentioned electrode unit and the structure of the electrode unit under the above-mentioned conventional situation are identical, and have identical functions, so no longer it is further described.
[81] shown in Figure 12 and 13, coldplate 416 has the platy structure of a predetermined thickness.A plurality of coolant guiding channels 417 are formed in the coldplate 416, make each coolant guiding channel 417 extend between the surface of relative longer side at coldplate 416.The cross sectional shape of each coolant guiding channel 417 all is a rectangle.All be formed with an inlet and an outlet respectively in the opposite end of each coolant guiding channel 417.
[82] though do not illustrate, connecting tube is connected to the entrance and exit of each coolant guiding channel 417 respectively, so that coolant is supplied into coolant guiding channel 417 from the outside of plasma processing equipment, then coolant is discharged coolant guiding channel 417.The cross sectional shape of connecting tube is consistent with the cross sectional shape of entrance and exit respectively.The cross sectional shape of connecting tube can be a rectangle.In this example, to compare for circular connecting tube with cross sectional shape, the area of section of connecting tube is very big.Correspondingly, in this example, the flow rate of coolant has increased, thereby has improved cooling effectiveness.
[83] because each coolant guiding channel 417 all has the cross sectional shape of a rectangle, shown in Figure 12 and 13, the area of cooling medium flowing is very big in coolant guiding channel 417, thereby has improved cooling effectiveness.
[84] each coolant guiding channel 417 can have different shapes, and be not restricted to shown in the illustrated embodiment, as long as the sectional area of the coolant guiding channel 417 that can obtain to increase.
[85] be formed with a tiny gap inevitably between the contact surface of coldplate 416 and bottom electrode 414---promptly---because the bolt fastening structure of coldplate 416 and bottom electrode 414, at the upper surface of the coldplate 416 that is formed with coolant guiding channel 417 and be arranged on the lower surface of the bottom electrode 414 on the coldplate 416.Because this gap has reduced heat transfer efficiency, so must fill this gap with a heat transfer medium with high thermal conductivity coefficient.For this reason, around each coolant guiding channel 417, be formed with the seal groove of rectangle respectively at the lower surface of the upper surface of coldplate 416 and bottom electrode 414.Containment member O be engaged in and each coolant guiding channel 417 corresponding seal groove between, thereby in the gap, limit a sealed space G.
[86] a kind of heat transfer medium with high conductive coefficient is packed in the space G that is sealed by each containment member O.
[87] state of heat transfer medium can be liquid or gaseous state.For the heat transfer medium of a liquid state, can use the mixture of an anti-freezing solution, for example mix the lower ethylene glycol of specific heat and deionized water, perhaps HT-200 in the proper ratio.
[88] for the heat transfer medium of a gaseous state, can use inert gas, for example helium.
[89] because the conductive coefficient of heat transfer medium is high, it has promoted the heat conduction of coolant.Thus, improved the cooling effectiveness that coolant is circulated in wherein coldplate 416.
[90] thereby, circulate in coolant guiding channel 417 by coolant---described coolant guiding channel be formed on the contacted coldplate 416 of the lower surface of bottom electrode 414 in, make each coolant guiding channel 417 between two longer side surfaces of coldplate 416, extend---and realized the cooling of bottom electrode 414, described bottom electrode 414 is included in the electrode unit according to the plasma processing equipment of four embodiment of the invention, and on this bottom electrode 414, be mounted with the substrate that needs processing, shown in Figure 12 and 13.
[91] as mentioned above, owing between the contact surface of coldplate 416 and bottom electrode 414 because be formed with a tiny gap, so heat transfer efficiency may reduce in the reason of the bolt fastening structure of coldplate 416 and bottom electrode 414 edge part offices.For this reason, containment member is engaged in the described gap limiting seal cavity G in this gap, and for example the heat transfer medium of the mixture of helium or ethylene glycol and deionized water etc. is filled in this seal cavity G.Thereby, can improve the cooling effectiveness of coolant, thereby prevent the reduction of heat transfer efficiency.
[92] coolant---it can be liquid state or gaseous state---imports the coolant guiding channel 417 by connecting tube from the outside of plasma processing equipment, described connecting tube is connected respectively to the inlet of coolant guiding channel 417, discharges coolant guiding channel 417 by the outlet of coolant guiding channel 417 then.Because in the cyclic process of coolant, the thermal conductivity of coolant is owing to heat transfer medium has increased, so the cooling effectiveness with the contacted bottom electrode 414 of coldplate 416 upper surfaces has been improved.Discharge processing cavity from the coolant that the outlet of coolant guiding channel 417 is discharged by connecting tube.Though do not illustrate, a pump is connected to this connecting tube.
[93] as mentioned above, because the heat transfer medium with a high thermal conductivity coefficient is packed in the seal cavity G---sealing space G is defined in by containment member O in the gap between the contact surface of coldplate 416 and bottom electrode 414, can improve the thermal conductivity of coolant of the coolant guiding channel 417 of the coldplate 416 of flowing through by heat transfer medium.Thereby, realize that with the circulation by coolant only the situation of the cooling of bottom electrode 414 compares, can improve cooling effectiveness.
The 5th execution mode
[94] with reference to Figure 14 a and 14b, it shows a plasma processing equipment according to fifth embodiment of the invention.Though not shown in Figure 14 a and the 14b, this plasma process equipment comprise top electrode that a processing cavity, one be arranged on processing cavity top with the gas blowing of needs is gone in the processing cavity and electrode unit that one is arranged on the processing cavity bottom so that this electrode unit facing to described top electrode.The substrate load of a needs processing is on electrode unit.Power supply is supplied to described electrode unit.Because the structure of above-mentioned plasma processing equipment and the structure of the plasma processing equipment under the above-mentioned conventional situation are identical, and have identical functions, so no longer it is further described.
[95] shown in Figure 14 a and 14b, electrode unit comprises a substrate.Electrode unit also comprises an insulator arrangement, a temperature adjusting plate 516 and a bottom electrode 527, and these insulator arrangements, temperature adjusting plate and bottom electrode order according to this hierarchically are arranged on the substrate.The insulation board (not shown) is installed on the electrode unit, makes insulation-panel packets around the marginal portion of the edge surface and the electrode unit end face of electrode unit, is subjected to isoionic effect to prevent electrode unit.
[96] temperature adjusting plate 516 is attached to the lower surface of bottom electrode 527.The function of temperature adjusting plate 516 is cooling or heating bottom electrode 527, makes bottom electrode 527 remain on the predetermined temperature.As shown in figure 16, temperature adjusting plate 516 is made of sintering ceramic powder.In sintering circuit, a medium circulation pipeline 516a is formed in the temperature adjusting plate 516.
[97] in order to form medium circulation pipeline 516a in temperature adjusting plate 516, prepare a pipeline preformed member 517 as shown in figure 15, the shape of this pipeline preformed member 517 is identical with medium circulation pipeline 516a.Pipeline preformed member 517 suitably is arranged in the mould (not shown).Under this state, ceramic powder filled is gone in the mould, and by first and second sintering circuits of at high temperature carrying out sintering.In sintering circuit, pipeline preformed member 517 fusings that fusing point is lower, thus disappear from its position.Thus, the medium circulation pipeline 516a identical with pipeline preformed member 517 shapes is formed in the ceramic body of sintering, promptly is formed in the temperature adjusting plate 516.
[98] carry out first sintering circuit with 1000 to 1200 ℃ sintering temperature, and second sintering circuit is carried out with 1700 ℃ sintering temperature.By first and second sintering circuits, temperature adjusting plate 516 has the physical property of expectation, for example high rigidity and high-durability.
[99] fusing point of the material of formation pipeline preformed member 517 is lower than the sintering temperature of first and second sintering circuits.For example, pipeline preformed member 517 is formed by synthetic resin or the copper that fusing point is lower than pottery.As a reference, the fusing point of copper is 1083 ℃.Certainly, pipeline preformed member 517 can be by the made beyond synthetic resin or the copper, as long as the fusing point of this material is lower than the fusing point of pottery.
[100] structure of pipeline preformed member 517 can be shaft-like also can be tubulose.When the structure of pipeline preformed member 517 when being shaft-like, it must melt in sintering process and form medium circulation pipeline 516a with formation temperature adjustable plate 516.Yet when the structure of pipeline preformed member 517 was tubulose, it can form medium circulation pipeline 516a and need not to be melted, because it has an inner space, and heat transfer medium this space of can flowing through.
[101] opposite end of pipeline preformed member 517 has formed the entrance and exit of medium circulation pipeline 516a.Pipeline preformed member 517 has a plurality of U-shaped parts that are arranged between its opposite end.
[102] turning of the U-shaped of each pipeline preformed member 517 part all is round, reduces around the corner with the speed that prevents heat transfer medium mobile in medium circulation pipeline 516a.When medium circulation pipeline 516a is formed by a brill rifle---as conventional situation---its have the turning of band corner angle inevitably, cause in medium circulation pipeline 516a the speed of the heat transfer medium that flows to reduce.
[103] shown in Figure 14,15 and 16, according to the 5th execution mode of the present invention, the medium circulation pipeline 516a of temperature adjusting plate 516 forms by a ceramic sintering process, rather than forms by bore process.That is to say, the preformed member 517 that preparation is formed by synthetic resin or copper, the fusing point of described synthetic resin or copper is lower than the sintering temperature of the material of formation temperature adjustable plate 516.Preformed member 517 is embedded in the ceramic powders that is filled in the mould.Under this state, sintering ceramic powder and formation temperature adjustable plate 516.In sintering circuit, preformed member 517 fusing makes in temperature adjusting plate 516 and to stay next empty space in the position of preformed member 517.This space has formed medium circulation pipeline 516a.
[104] with reference to Figure 17, it shows a kind of method that is used to make according to the temperature adjusting plate of the plasma processing equipment of fifth embodiment of the invention.Manufacture method comprises: step S200, prepare a preformed member that is used to form a medium circulation pipeline; Step S210 uses the ceramic powder filled mould, and preformed member is embedded in the ceramic powders in the mould; Step S220 carries out first sintering to ceramic powders, to form the ceramic body of a sintering; Step S230 carries out the sintering second time to ceramic body behind the sintering; Step S240 by the fusing of the preformed member that caused by first and second sintering circuit S220 and the S230, forms the medium circulation pipeline in sintered ceramic body; And step S250, the ceramic body that sinters is separated from mould, thereby obtained a temperature adjusting plate, wherein be formed with the medium circulation pipeline.
[105] in step S200, prepare preformed member 517 by synthetic resin or copper production, the fusing point of described synthetic resin or copper is lower than the sintering temperature among the first and second sintering circuit S220 and the S230.By synthetic resin being molded as a suitable structure or becoming a copper rod bending suitable structure to prepare this preformed member 517.
[106] structure of pipeline preformed member 517 can be shaft-like also can be tubulose.When the structure of pipeline preformed member 517 when being shaft-like, it must melt in sintering process and form medium circulation pipeline 516a with formation temperature adjustable plate 516.Yet when the structure of pipeline preformed member 517 was tubulose, it can form medium circulation pipeline 516a and need not to be melted, because it has an inner space, and heat transfer medium this space of can flowing through.
[107] in step S210, use mould of ceramic powder filled with formation temperature adjustable plate 516.In filling process, preformed member 517 is embedded in the ceramic powders in the mould.
[108] in the first sintering step S220, be packed into the ceramic powders of mould with 1000 to 1200 ℃ the first sintering temperature sintering, to form the ceramic body that a sintering is crossed.
[109] in the second sintering step S230, the ceramic body of sintering being crossed with 1700 ℃ second sintering temperatures carries out sintering.Thereby finish sintering, because the fusing point of pottery is approximately 1200 ℃ to sintered ceramic body.By second sintering circuit, the physical property of the ceramic body that sinters---for example rigidity and durability degree---has improved, and temperature adjusting plate 516 needs the physical property improved.
[110] in step S240,,, in sintered ceramic body, form the medium circulation pipeline by the fusing of the preformed member that caused by first and second sintering circuit S220 and the S230 because the fusing point of preformed member is lower than the fusing point of pottery.Along with the fusing of preformed member, the position of the preformed member in the ceramic body that sinters has stayed a space.This space has formed the medium circulation pipeline.
[111] in step S250, the ceramic body that sinters is separated from mould.Thereby obtain a temperature adjusting plate 516, wherein be formed with medium circulation pipeline 516a.
The 6th execution mode
[112] with reference to Figure 18, it shows a plasma processing equipment according to sixth embodiment of the invention.This plasma process equipment comprises that one includes the top electrode assembly of an electric pole plate 621, a bottom electrode, a contacted shower nozzle 622 of the lower surface with electric pole plate 612 and a cooler.The structure of bottom electrode can be identical with one of the present invention's first to the 5th execution mode.Shower nozzle 622 has a plurality of outlets 624, is used for the substrate supply processing gas towards need processing.The outlet 624 respectively be arranged on electric pole plate 621 on a plurality of outlets align.Because shower nozzle 622 is arranged on the position that directly is exposed to plasma, exist this may: the temperature of shower nozzle 622 has raise unfriendly.For this reason, a coolant channel 631 is formed in the shower nozzle 622, with the guiding cold-producing medium shower nozzle 622 of flowing through, thus and cooling spray 622.Coolant channel 631 is connected to a cryogen source (not shown) that is arranged on outside the chamber at the one end by a cold-producing medium importing pipeline 632 that extends through electric pole plate 621, and described chamber is defined in the inside of plasma processing equipment.Coolant channel 631 is also connected to a refrigerant discharge leader road 633 that extends through electric pole plate 621 at its other end.Thereby cold-producing medium imports pipeline 632 by cold-producing medium and imports in the coolant channel 631, flowing through coolant channel 631 shower nozzle 622 is cooled off the back by refrigerant discharge leader road 633 discharging refrigerant passages 631 then.Cold-producing medium can circulate in cooler and a circulatory system.
[113] as shown in figure 18, except electric pole plate 621, the top electrode assembly comprises a upper support member 620.Electric pole plate 621 is connected to the lower surface of upper support member 620.Shower nozzle 622 is also included within the top electrode assembly.Shower nozzle is installed on the lower surface of electric pole plate 621.The top electrode assembly also can comprise a side support member 627, and this side support member 627 is installed in around the shower nozzle 622, to support shower nozzle 622.
[114] go up support member 620 and have a processing gas passage, be used to supply processing gas.Last support member 620 also has through hole 620a and 620b, these through holes are formed on respectively by the zone on cold-producing medium importing pipeline 632 and refrigerant discharge leader road 633 is arranged, so that cold-producing medium imports pipeline 632 and refrigerant discharge leader road 633 can extend through upper support member 620.The diameter of through hole 620a and 620b is greater than the diameter of refrigerant line 632 and 633, to prevent that cold-producing medium from importing pipeline 632 and contacting with upper support member 620 with refrigerant discharge leader road 633.Correspondingly, can suppress each cold-producing medium and import heat exchange between pipeline 632 and refrigerant discharge leader road 633 and the upper support member 620.
[115] electric pole plate 621 that contacts with the lower surface of upper support member 620 can ground connection, to form a pressure reduction between bottom electrode and electric pole plate 621.A RF voltage that comes from radio frequency (RF) voltage source can be applied on the electric pole plate 621 by an impedance matching unit, separates between described impedance matching unit and the bottom electrode.Electric pole plate 621 has a processing gas service duct 623 and the outlet of a plurality of processing gas.Electric pole plate 621 also has and is connected to the coolant channel 635 and 636 that cold-producing medium imports pipeline 632 and refrigerant discharge leader road 633 respectively, to allow the cold-producing medium electric pole plate 621 of flowing through.
[116] outlet 624 of shower nozzle 622 is alignd with the outlet of electric pole plate 621 processing gas respectively, to supply processing gas towards the substrate that is loaded on the bottom electrode.The coolant channel 631 guiding cold-producing mediums that form by shower nozzle 622 flow through shower nozzle 622.As mentioned above, coolant channel 631 is connected to a cryogen source (not shown) that is arranged on outside the chamber at the one end by cold-producing medium importing pipeline 632 and the coolant channel 635 that extends through upper support member 620 and electric pole plate 621 respectively, and described chamber is defined in the inside of plasma processing equipment.Coolant channel 631 is also connected to refrigerant discharge leader road 633 and the coolant channel 636 that extends through upper support member 620 and electric pole plate 621 respectively at its other end.
[117] cold-producing medium imports pipeline 632 and refrigerant discharge leader road 633 and radially separates with the through hole 620a and the 620b of upper support member 620 respectively, makes pipeline 632 not contact with upper support member 620 with 633.Pipeline 632 and 633 defines coolant channel 623a and the 633a that aligns with the coolant channel 635 and 636 of electric pole plate 621 respectively within it.Pipeline 632 and 633 combines with electric pole plate 621 hermetically by sealing stuffer or O shape ring 634.The shape of through hole 620a and 620b is not limited to specific shape, as long as define a specific gap to prevent heat conduction between the two between each through hole 620a and 620b and respective line 632 and 633.Simultaneously, preferably, the cross sectional shape of each through hole 620a and 620b and the cross sectional shape of respective line 632 and 633 are similar.The cross sectional shape of each through hole 620a and 620b is not limited to a specific shape, as long as respective line 632 or 633 can be passed through hole 620a or 620b and do not contacted with through hole 620a or 620b.
[118] around corresponding pipeline 632 or 633, in each through hole 620a or 620b, be filled with heat-insulating material.For heat-insulating material, can use polymer, electro-insulating rubber or the insulating ceramics of insulation.Certainly, can use other material, as long as they have the performance of insulation.
[119] as mentioned above because cold-producing medium imports pipeline 632 and refrigerant discharge leader road 633 does not contact with upper support member 620, can suppress each pipeline 632 and 633 and upper support member 620 between heat exchange, thereby and cooling spray 622 effectively.
[120] shown in Figure 19 a or 19b, the outlet 624 of supplying processing gas towards substrate is evenly distributed on the whole zone of shower nozzle 622.Simultaneously, coolant channel 631 extends around the outlet 624 of shower nozzle 622.Correspondingly, the cold-producing medium by refrigerant inlet 631a importing shower nozzle 622 cools off shower nozzle 622 when flowing through shower nozzle 622.Cold-producing medium is derived shower nozzle 622 by refrigerant outlet 631b then.Refrigerant inlet 631a imports pipeline 632 with the cold-producing medium that extends through shower nozzle 622 and electric pole plate 621 and is connected.On the other hand, refrigerant outlet 631b is connected with the refrigerant discharge leader road 633 that extends through shower nozzle 622 and electric pole plate 621.
[121] structure of coolant channel 631 can be single pass, shown in Figure 19 a.Alternatively, coolant channel 631 can have a plurality of channel designs of separating.In one situation of back, coolant channel 631 and have two channel designs of separating, described two passages are only about half of shower nozzle 622 zones of extend through respectively.In this case, can suitably adjust the position of the refrigerant inlet 631a and the refrigerant outlet 631b of the channel design in each coolant channel 631.Shown in situation in, the fringe region of cold-producing medium by shower nozzle 622 imports shower nozzle 622, and derives shower nozzle 622 by the zone line of shower nozzle 622.Yet, the flow of refrigerant in the shower nozzle 622 can with the situation of example in oppositely, the zone line that makes cold-producing medium pass through shower nozzle 622 imports shower nozzle 622, and derives shower nozzle 622 by the fringe region of shower nozzle 622.In addition, can obtain various cold-producing medium streams, and be not limited to above-mentioned situation.Similarly, can obtain various air-flows.
[122] when coolant channel 631 has a plurality of channel design of separating, form a plurality of through holes that pass upper support member 620, make through hole be connected to the separately entrance and exit of channel design of coolant channel 631 respectively.
[123] though described top electrode assembly includes upper support member 620, is connected to the electric pole plate 621 of described upper support member lower surface and is installed in shower nozzle 622 on electric pole plate 621 lower surfaces, described top electrode assembly can further comprise an insulation cushion that is arranged between electric pole plate 621 and the upper support member 620.This insulation cushion can partly cover electric pole plate 621 and upper support member 620, or fully covers electric pole plate 621 and upper support member 620.Simultaneously, this insulation cushion can have a thin laminated structure.In this case, insulation board is engaged between electric pole plate 621 and the upper support member 620.Alternatively, insulation cushion can have a coated film structure.In this case, insulation cushion is coated on the upper surface of electric pole plate 621, or is coated on the lower surface of upper support member 620.Certainly, as mentioned above, can be in the through hole 620a of upper support member 620 and 620b filling heat insulator.
[124] insulation cushion can be made by insulating polymer, electro-insulating rubber or pottery.Certainly, can use other material, as long as they have the performance of insulation.
[125] when insulation cushion is arranged between electric pole plate 621 and the upper support member 620, can suppress heat exchange effectively from shower nozzle 622 to upper support member 620.
[126] according to a first aspect of the present invention, a kind of plasma processing equipment that large area substrates is processed of being used for is provided, wherein in electrode, be formed with a plurality of refrigerant circulation passage.In this case, compare, shortened by the refrigerant path that each refrigerant circulation passage limited with the situation of routine.Therefore, have a such advantage: the refrigerant temperature difference between refrigerant inlet and the refrigerant outlet has reduced.
[127] when the refrigerant inlet of each refrigerant circulation passage and the entrance and exit in refrigerant outlet and the corresponding refrigerant circulation passage oppositely are provided with, can offset the temperature difference that betides between refrigerant inlet and the refrigerant outlet, thereby, the whole zone of electrode is remained on desired temperatures.
[128] because the whole zone of electrode can remain on the desired temperatures, thus the problem that betides in the large area substrates course of processing can be solved, that is, and the reduction of the machining reproducibility that causes owing to the temperature difference.
[129] according to another aspect of the present invention, a kind of plasma processing equipment is provided, one of them cooling water pipe is arranged between the contact surface of bottom electrode and coldplate, described coldplate is included in the electrode unit that is arranged on the plasma processing equipment bottom, so that coolant cycles through described cooling water pipe.Because bottom electrode is by the cooling water pipe cooling that directly contact with bottom electrode, can't help the direct situation of cooling off of coldplate with bottom electrode and compare, obtained a coefficient of overall heat transmission that has increased.Thus, promptly realized heat balance between bottom electrode and the coldplate.Thereby, obtained the bottom electrode cooling effectiveness an of the best.In addition, realized the setting of cooling water pipe simply by in the contact surface of bottom electrode and coldplate, forming conduit.Therefore, can easily realize the setting of cooling water pipe.
[130] according to a third aspect of the present invention, a kind of plasma processing equipment is provided, wherein, in coldplate, be formed with groove, the coolant guiding channel that has rectangular cross sectional shape with formation, the lower surface of this coldplate contact bottom electrode, described bottom electrode is included in an electrode unit that is arranged in the plasma processing equipment bottom.Because described coolant guiding channel has rectangular cross sectional shape, the flow through flow rate of coolant guiding channel of coolant has increased.Simultaneously, prevent that eddy current from forming the entrance and exit end that member is arranged on coldplate respectively.Prevent that by this eddy current from forming member, the circulation rate of coolant increases.Therefore, the cooling effectiveness of bottom electrode has improved.Because coolant guiding channel forms by the groove that is formed in the coldplate upper surface, can be easily and form coolant guiding channel at an easy rate.
[131] according to a fourth aspect of the present invention, a kind of plasma processing equipment is provided, wherein, form coolant guiding channel by a coldplate, thereby make each coolant guiding channel all between two of coldplate relative longer side surfaces, extend and coolant circulate cool off bottom electrode in coolant guiding channel, the lower surface of this coldplate contact bottom electrode, described bottom electrode are included in the electrode unit that is arranged on the plasma processing equipment bottom.
[132] consider a tiny gap between the contact surface that is formed at bottom electrode and coldplate owing to the integrated structure between bottom electrode and the coldplate, in described gap, be combined with containment member, in this gap, to limit a sealed space.The heat transfer medium of liquid state or gaseous state is inserted in the sealing space.Thereby, except the cooling effect that coolant obtained,, can improve the cooling effectiveness of bottom electrode by the heat transfer that heat transfer medium carries out.
[133] according to a fifth aspect of the present invention, a kind of plasma processing equipment is provided, it comprises a temperature adjusting plate that is formed with the medium circulation pipeline.Described medium circulation pipeline forms by a sintering circuit, and need not the brill rifle that uses one temperature adjusting plate to be carried out drilling operation in four sides of temperature adjusting plate, or need not to make in this way, wherein the medium circulation pipeline is formed at temperature adjusting plate and is arranged on one of them of upper plate on this temperature adjusting plate, then hermetically in conjunction with this temperature adjusting plate and upper plate.That is to say that prepare a preformed member, this preformed member is by low-melting made.Preformed member is embedded in the ceramic powders that is filled in the mould.Under this state, sintering ceramic powder is with the formation temperature adjustable plate.In first and second sintering circuits, the preformed member fusing, thus next space is stayed in the position of preformed member in temperature adjusting plate.Described space has formed the medium circulation pipeline.Thereby, can easily in temperature adjusting plate, form the medium circulation pipeline.
[134] according to a sixth aspect of the present invention, a kind of plasma processing equipment is provided, it is configured to have suppressed effectively the heat exchange between coolant channel and the upper support member, and described coolant channel is formed in the electric pole plate, and the upper support member can support electric pole plate.
[135] coolant channel so forms: it does not contact with the upper support member.Therefore, suppressed the heat exchange between coolant channel and the upper support member, and more effectively cooled off a shower nozzle that is included in the plasma processing equipment.In addition, can prevent that the temperature of upper support member from reducing, and the temperature reduction that prevents to be defined in a chamber in the plasma processing equipment.
[136] though described preferred implementation of the present invention for the example purpose, the one of ordinary skilled in the art will appreciate that: can carry out various modifications, interpolation and replacement, and not depart from category of the present invention and the spirit that is disclosed in the claims.

Claims (16)

1. plasma processing equipment, it uses plasma that substrate is carried out a predetermined processing, and described plasma generation is in a cavity, and described plasma processing equipment comprises:
A bottom electrode is arranged in the described cavity; And
A cooler, described cooler makes cold-producing medium circulate in described bottom electrode, to cool off described bottom electrode, described cooler comprises refrigerant circulation passage, described refrigerant circulation passage is formed in the described bottom electrode, and make each refrigerant circulation passage in a plane parallel, extend with the primary flat of described bottom electrode
Wherein said refrigerant circulation passage has upper channel and is arranged at the lower channel of described upper channel below, and described cold-producing medium flows along a direction in described upper channel, flows in the opposite direction with a described side in described cold-producing medium edge in described lower channel.
2. plasma processing equipment as claimed in claim 1, it further comprises:
A coldplate, described coldplate are arranged to contact with described bottom electrode and this bottom electrode is cooled off; And
A cooling water pipe, described cooling water pipe is arranged between described bottom electrode and the coldplate, and defines a passage therein, makes coolant to circulate in described cooling water pipe,
Wherein said cooling water pipe directly contacts with coldplate with described bottom electrode.
3. plasma processing equipment as claimed in claim 2, wherein said cooling water pipe comprises:
The a pair of transverse pipe member that separates;
A plurality of vertical pipe components that separate, described vertical pipe component are arranged between the opposite end of described transverse pipe member and with described transverse pipe member and are connected, and extend perpendicular to described transverse pipe member simultaneously;
An inlet tube member, it is connected to the middle part of one of described transverse pipe member; And
An outlet member, it is connected to the middle part of another described transverse pipe member.
4. plasma processing equipment as claimed in claim 3, wherein said bottom electrode and coldplate are formed with the engaging groove that faces with each other on its surface that contacts with each other, described engaging groove is consistent with the shape of cooling water pipe, thereby makes described cooling water pipe correspondingly to be engaged between the described engaging groove.
5. plasma processing equipment as claimed in claim 1, it further comprises:
A coldplate, it is arranged to contact with the lower surface of described bottom electrode so that this bottom electrode is cooled off, and is provided with a plurality of recesses with preset width and desired depth, thereby defines a plurality of coolant guiding channels;
Containment member, described containment member are arranged between the contact surface of described bottom electrode and coldplate round described coolant guiding channel respectively; And
Wherein each described coolant guiding channel all has the cross sectional shape of a rectangle, makes described coolant to flow through described coldplate by high flow rate.
6. plasma processing equipment as claimed in claim 5, it further comprises:
A member that prevents that eddy current from forming, it is arranged on the porch of each described coolant guiding channel and prevents to form eddy current when coolant imports to described coolant guiding channel.
7. plasma processing equipment as claimed in claim 1, it further comprises:
A coldplate, it is arranged to contact with the lower surface of described bottom electrode and this bottom electrode is cooled off, and is provided with a plurality of coolant guiding channels that have rectangular cross sectional shape in the coldplate, simultaneously that are formed at,
Containment member, described containment member are bonded on around described coolant guiding channel in the gap between the contact surface that is defined in described bottom electrode and coldplate respectively, and limit seal cavity in described gap; And
A kind of heat transfer medium, described heat transfer medium have high conductive coefficient and are packed in the described seal cavity, thereby have improved the heat transfer efficiency from described bottom electrode to described coldplate.
8. plasma processing equipment as claimed in claim 7, wherein said heat transfer medium comprise a kind of liquid with low specific heat, and are a kind of mixtures that is mixed by ethylene glycol and deionized water.
9. plasma processing equipment as claimed in claim 1, it further comprises:
A temperature adjusting plate, it is arranged to contact with described bottom electrode, and is provided with one and is used for circulation line coolant or heat medium, that extend at this temperature adjusting plate,
Wherein, described temperature adjusting plate forms like this: be used to form described circulation line and the preformed member of being made by a low melting material, described preformed member is arranged on makes described preformed member be embedded in the ceramic powders in the mould and with the ceramic powder filled mould and sintering ceramic powder forms the ceramic body of a sintering thereby prepare one, simultaneously described preformed member fusing, make and stay next space, and in this sintered ceramic body, form described circulation line in the position of this preformed member.
10. plasma processing equipment as claimed in claim 9, wherein said sintering is undertaken by one first sintering circuit and one second sintering circuit, described first sintering circuit is used 1000-1200 ℃ first sintering temperature, and described second sintering circuit is used 1700 ℃ second sintering temperature.
11. plasma processing equipment as claimed in claim 10, the fusing point of material of wherein making described preformed member is between described first sintering temperature and second sintering temperature.
12. plasma processing equipment as claimed in claim 1 further comprises:
A shower nozzle, described shower nozzle comprise a plurality of being used for towards the outlet of substrate supply processing gas and the coolant channel that at least one is formed at described shower nozzle;
A upper support member, it is arranged on the top of described shower nozzle, and is provided with a processing gas passage that is connected with described shower nozzle outlet, also is provided with through hole; And
Refrigerant line, it extends through the through hole of described upper support member and is connected with the coolant channel of described shower nozzle, and the edge surface with respective through hole radially separates a predetermined distance simultaneously.
13. plasma processing equipment as claimed in claim 12, wherein said through hole is filled with insulating material.
14. plasma processing equipment as claimed in claim 1,
Wherein, described upper channel has upper inlet and upper outlet, and described lower channel has lower inlet and outlet down, and described upper inlet and following outlet are arranged on a side of described bottom electrode, and described upper outlet and lower inlet are arranged on the opposite side of described bottom electrode.
15. plasma processing equipment as claimed in claim 1,
Wherein said upper channel has upper inlet and upper outlet, and described lower channel has lower inlet and outlet down, and the zone line of described upper inlet and lower inlet and described bottom electrode is adjacent.
16. plasma processing equipment as claimed in claim 1,
Wherein said upper channel has first upper channel and a plurality of second upper channel that branches out from described first upper channel, makes described second upper channel be parallel to each other,
Described lower channel has first lower channel and a plurality of second lower channel that branches out from described first lower channel, makes described second lower channel be parallel to each other, and is orthogonal to described second upper channel.
CNB2006100032188A 2005-01-28 2006-01-27 Plasma processing device Expired - Fee Related CN100452944C (en)

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CN102568990A (en) * 2012-03-14 2012-07-11 无锡康力电子有限公司 Ion bombardment plate mechanism for vacuum coating film
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