CN100459146C - 用于mosfet的铟-硼双盐注入 - Google Patents

用于mosfet的铟-硼双盐注入 Download PDF

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CN100459146C
CN100459146C CNB038232146A CN03823214A CN100459146C CN 100459146 C CN100459146 C CN 100459146C CN B038232146 A CNB038232146 A CN B038232146A CN 03823214 A CN03823214 A CN 03823214A CN 100459146 C CN100459146 C CN 100459146C
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salt
channel region
indium
boron
substrate
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CN1685517A (zh
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C·维伯
G·施勒姆
I·波斯特
M·施泰特尔
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Intel Corp
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Abstract

一种方法，包括形成具有沟道区域的晶体管器件；将第一盐注入沟道区域；以及将不同的第二盐注入沟道区域。一种装置，包括形成在基板上的栅极电极；形成在基板中、栅极电极下、以及接点之间的沟道区域；沟道区域中的包括第一种类的第一盐注入物；以及沟道区域中的包括不同的第二种类的第二盐注入物。

Description

用于MOSFET的铟-硼双盐注入
背景
领域
电路器件和用于形成电路器件的方法。
背景
场效应晶体管(FET)是诸如多处理器或其它电路之类的集成电路的普通元件。晶体管一般包括形成于半导体基板中的源极和漏极结区域(junctionregion)，以及形成于基板的表面上的栅极电极。栅极长度一般为源极和漏极结区域之间的距离。在基板内，栅极电极下且位于源极和漏极结之间的基板的区域一般被称为沟道，沟道长度为源极和漏极结之间的距离。
如上所述，许多晶体管器件形成在半导体基板中。为了提高基板的半导体材料的电导率，将掺杂剂引入(例如注入)基板中。具有代表性的是，N型晶体管器件可用诸如砷之类的N型掺杂剂掺杂源极和漏极区域(以及栅极电极)。在先前已形成的P型电导率的阱(well)中形成N型结区域。合适的P型掺杂剂是硼。
晶体管器件一般以下述方式工作。通过基板上建立与源极和漏极结的接触，载流子(例如电子、空穴)在源极结和漏极结之间流动。为了建立载流子流，必须将足够的电压施加到栅极电极，以在沟道中形成载流子的反型层。该电压的最小量一般称为阈电压(Vt)。
一般来说，当制造相同尺寸的多个晶体管时，希望器件之间的性能特性如阈电压相类似。一般来说，阈电压随着栅极长度的减小而趋于降低。当然，性能常常取决于晶体管尺寸中的降低(例如更快开关、芯片上更多的器件等)，它支配着半导体加工业的目标。当栅极电极长度接近小于100纳米(nm)的尺寸时，发现阈电压迅速下降或降低。因此，即使是栅极电极长度中的小变化(例如与目标长度相差10纳米)，也可能显著地影响阈电压。
理想的是，在关于目标栅极长度的一定范围的栅极长度中，阈电压应为恒定，以构成制造裕度。在一方面，为了促进在可接受的栅极长度范围内更恒定的阈电压，可在栅极边缘下引入局部注入的掺杂剂(N型金属氧化物半导体FET(NMOSFET)中为P型，P型金属氧化物半导体FET(PMOSFET)中为N型)。这种注入物被称为是“盐”(halo)注入物。注入的掺杂剂有助于提高沟道边缘周围的掺杂浓度，从而增加阈电压。一个效果是降低目标尺寸器件的阈电压，同时维持最坏情况尺寸器件的阈电压。
用于NMOSFET的典型的盐注入物包括硼(如氟化硼(BF2))和铟(In)。用于PMOSFET的盐注入物包括砷、锑、磷。就NMOSFET而言，铟是特别优选的掺杂剂，因为铟沟道从器件的表面形成倒向的剖面轮廓。相对于不具有相同的倒向的剖面轮廓的硼掺杂剂来说，这种关于铟的浓度分布曲线有助于降低满足器件中给定的漏电流(Ioff)所要求的阈电压。与铟有关的一个问题是铟实现了达到最差情况漏电流所要求的浓度之下的固溶性状态。从而，为了以小漏电流为目标(例如在小于100nm(nm)的器件上大约40纳安(na)的数量级)，仅仅铟类盐注入物是不能实现这种目标的。
附图简述
通过下面的详细说明、所附的权利要求以及附图，本发明的特征、方面及优点将变得完全清楚，附图中：
图1示出了包括具有第一盐注入的晶体管器件的电路基板的一部分的截面图。
图2示出了第二盐注入后的图1的器件。
图3示出了对于所选定的漏电流，基板中的盐浓度对栅极长度的关系的图形表示。
图4示出了硅基板中P型掺杂剂的掺杂剂浓度。
图5示出了对于硅基板的阈电压对P型掺杂剂浓度的关系的图形表示。
图6示出了对于P型掺杂剂的漏电流对阈电压的关系的图形表示。
图7示出了对于NMOSFET器件的阈电压对栅极长度的关系的图形表示。
图8示出了对于NMOSFET的漏电流对栅极长度的关系的图形表示。
图9示出了基板上器件的数量对栅极长度的关系的图形表示。
图10示出了对于基板上的器件的数量，驱动电流对栅极长度的关系的图形表示。
图11示出了对于晶体管器件的驱动电流对漏电流的关系的图形表示。
详细说明
如上所述，铟是较佳的NMOSFET沟道掺杂剂(例如盐掺杂剂)，因为它的倒向的浓度分布曲线导致较低的阈电压和提高的驱动电流。然而，对于更小的器件，例如具有60nm或更小的目标栅极长度的器件，仅用铟作为盐掺杂剂是不可接受的，因为它的固溶度限度易于防止铟以足够高的水平掺杂入NMOSFET沟道以维持合理的最坏情况下的漏电流。
图1示出了其上形成晶体管器件的电路基板的一部分的剖面侧视图。结构100包括例如以硅为代表的半导体材料的基板110。在图1中的基板110中和基板110上形成的是晶体管器件。作为代表，该晶体管器件是形成在P型阱120中的NMOSFET。该晶体管器件包括形成在基板110的表面上的栅极电极130，具有栅极长度170。该晶体管器件还包括源极结140和漏极结150。在NMOSFET中，源极结140和漏极结150都是N型的，一般栅极电极130也为N型。源极结140包括(通过在形成衬垫部135之前的注入物)形成为例如自对准栅极电极130的尖端(tip)注入物145。(通过在形成衬垫部135之后的注入物)源极结140的大小与栅极电极130上的衬垫部135对准。类似地，漏极结150包括基本与栅极电极130对准的注入物155(例如轻微掺杂的漏极)。漏极结150的大小与栅极电极130上的衬垫部135对准。
图1还示出基板110的沟道区域160中的单盐注入物。在晶体管器件是NMOSFET的实施例中，第一注入物180例如是铟。可通过以例如25°至30°的倾角将诸如铟离子之类的掺杂剂离子引入基板110中来形成盐注入物。引入第一盐180的一种方法是在形成栅极电极之后(但在形成衬垫部之前)的注入操作，从而栅极电极充当对准的注入掩模。
图2示出了第二盐引入之后的图1的结构。对于所示的代表性的NMOSFET来说，第一盐180是铟类的，第二盐190是例如硼类的(例如二氟化硼)。可根据与引入第一盐类似的技术，通过注入来引入第二盐190。
在第一盐180是铟，第二盐190是硼或类似种类的例子中，涉及多种盐的一个技术包括将第一盐180引入到基板110的沟道120中达到用于硅的铟的固溶度，一般为2E18cm-3。在注入铟类达到铟固溶度之后，以对于某一栅极长度的器件实现目标阈电压来说足够量的程度注入硼种类作为第二盐190。理解到已经确定了铟和硼掺杂剂的合适的量，而引入两者的顺序可以变化。
在上述实施例中，引入铟种类的第一盐(例如第一盐180)，并引入第二盐(例如第二盐190)。从而，结构100包括引入沟道120中的两种盐。所描述的掺杂剂包括铟和硼种类。理解到，对于NMOSFET或PMOSFET来说，其它种类也类似适用。在一个例子中，在减少的栅极长度(例如大约70纳米或更小)以实现目标阈电压、漏电流和驱动电流的上下文环境中，选择并引入铟直到其固溶度。图3示出了对于所选定的例如40nA的漏电流(Ioff)，硅基板中的盐浓度对栅极长度的关系的图形表示。图3示出，随着栅极长度减少到大约100nm以后，铟饱和，并且不能单独地实现所希望的漏电流。图4代表性地示出了硅基板中的盐浓度。图3说明了满足漏电流要求(例如3E18cm-3)而要求的浓度大于铟固溶度(例如大约2E18cm-3)。
图5示出了阈电压对掺杂剂浓度的关系的图形表示。图5说明了铟在其固溶度饱和。图6示出漏电流对阈电压的关系的图形表示。图6说明了铟在其固溶度再次饱和(例如大约100纳安/微米)。从而，就实现目标阈电压和目标漏电流而言，使用除了包括铟种类的盐注入物之外的额外的盐注入物。如图5和图6所示，可使用硼种类的第二盐注入物来实现目标阈电压和目标漏电流。
根据上述图形表示，例如，其中最差情况栅极长度器件的漏电流(Ioff)是例如100纳安/微米，目标栅极长度例如是60纳米，可将铟种类引入作为第一盐直到其固溶度，可将例如硼种类的第二盐引入直到建立了支持所述漏电流而要求的阈电压为止。
图7和图8示出了与对于某一栅极长度器件的阈电压和漏极电流相关联的图形表示。这两个图形表示说明了与制造器件有关的制造裕度，特别是可接受的栅极长度中的偏差。作为代表，出于解释的目的，目标栅极长度为70纳米(nm)，而最坏栅极长度大约10nm。如图7所例示的那样，盐注入物易于降低目标尺寸器件的阈电压，同时维持最差情况尺寸器件的阈电压。然而，对于各种栅极长度的漏电流影响示于图8。作为代表，对于现有技术铟盐和硼阱类型(铟盐/硼阱)器件，最差情况栅极长度漏电流与目标栅极长度器件相比较，最差情况和目标之间的差异是大约10倍因数。从而，即使最差情况器件可能支配总漏电流，诸如所描述的多盐器件也能趋于以代表性的两倍的因数降低最差情况器件和目标器件的漏电流之间的差异。
虽然最差情况栅极长度器件趋于支配漏电流，但是目标器件趋于支配驱动电流。图9和10示出了诸如上述的多盐器件和现有技术单盐/硼阱器件。图9示出了基板上形成的器件和它们对应的栅极长度的表示。器件基本上采用钟形曲线。图10示出了用于在利用如现有技术那样铟盐/硼阱的情况下形成的器件以及按照多(铟和硼)盐器件形成的器件的典型驱动电流。图10示出了多(铟和硼)盐器件有助于在目标栅极长度获得更高的驱动电流，因为它们在目标栅极长度具有更高的漏电流。图11示出了晶体管器件的驱动电流对漏电流的图形表示。
在前述的详细描述中，说明了具体的实施例，包括单独的铟和硼注入物的双盐器件。然而，显然可对其作出各种修改和变化，而不背离如权利要求中所提出的本发明的较宽的要旨和范围。例如，已经对N型器件(P型掺杂剂)描述了铟和硼注入物。设想到可以类似的方式对N型器件引入其它掺杂剂(例如多盐)。可选地，对于P型器件，设想到可在多盐工艺中引入诸如砷和磷之类的N型掺杂剂，其中要优化例如驱动电流和漏电流的效果，但不限于此。因此，说明书和附图应被认为是说明性的而非限制性的。

Claims (8)

1.一种形成电路器件的方法，其特征在于，所述方法包括：
形成具有沟道区域的晶体管器件；
将包括铟的第一盐注入沟道区域，其中所述沟道区域中的所述第一盐的浓度是相当于所述沟道区域的材料中的包括铟的第一盐的固溶度的量；以及
将包括硼的第二盐注入沟道区域，其中第二盐不同于第一盐。
2.如权利要求1所述的方法，其特征在于，选择第二盐的量，以实现比仅通过注入第一盐而能实现的最小漏电流小的漏电流。
3.如权利要求1所述的方法，其特征在于，以25°至30°的倾角范围将第一盐注入沟道区域。
4.一种形成电路器件的方法，其特征在于，所述方法包括：
将包括铟的第一盐注入晶体管器件的沟道区域，其中所述沟道区域中的所述第一盐的浓度是相当于所述沟道区域的材料中的包括铟的第一盐的固溶度的量；以及
以足够实现该器件的目标阈电压的量，将包括硼的第二盐注入沟道区域，其中第二盐不同于第一盐。
5.如权利要求4所述的方法，其特征在于，以25°至30°的倾角范围将第一盐注入沟道区域。
6.一种形成电路器件的方法，其特征在于，所述方法包括：
根据目标栅极长度在基板上形成多个晶体管；
将包括铟的第一盐注入所述多个晶体管中的每一个的沟道区域，其中所述沟道区域中的所述第一盐的浓度是相当于所述沟道区域的材料中的包括铟的第一盐的固溶度的量；
以足够实现对于不同于目标栅极长度的最差情况可接受的栅极长度的目标阈电压的量，将包括硼的第二盐注入所述多个晶体管中的每一个的沟道区域，其中第二盐不同于第一盐。
7.如权利要求6所述的方法，其特征在于，以25°至30°的倾角范围将第一盐注入沟道区域。
8.一种电路器件，其特征在于，所述装置包括：
形成在基板上的栅极电极；
形成在基板中、栅极电极下、以及两个结区域之间的沟道区域；
沟道区域中的包括铟的第一盐注入物，其中所述沟道区域中的所述第一盐的浓度是相当于所述沟道区域的材料中的包括铟的第一盐的固溶度的量；以及
沟道区域中的包括硼的第二盐注入物，其中第二盐不同于第一盐。
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