CN100460555C - Equipment and method for low temperature depositing high-quality decorative film by electric arc ion plating - Google Patents
Equipment and method for low temperature depositing high-quality decorative film by electric arc ion plating Download PDFInfo
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- CN100460555C CN100460555C CNB2006100457205A CN200610045720A CN100460555C CN 100460555 C CN100460555 C CN 100460555C CN B2006100457205 A CNB2006100457205 A CN B2006100457205A CN 200610045720 A CN200610045720 A CN 200610045720A CN 100460555 C CN100460555 C CN 100460555C
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Abstract
The arc ion plating and depositing high-quality decorative film method comprises: using cathode arc source with double-EM field to filter large grain and impulse negative bias voltage to control deposition temperature in arc ion plating. Compared with prior art, this invention deposits high-quality Cr, Zr, Ti, Al and alloy or nitrate film or carbide film to meet decorative request and resistance to wear and corrosion, reduces little efficiency, improves quality greatly special the film surface quality, and has wide application.
Description
Technical field
The invention belongs to the metal surface properties modification technical field.
Background technology
The deposition that ion plating technique is used for decorating film prepares the history that arranged decades.Arc ion plating, because a plurality of cathode arc sources of general employing simultaneous work simultaneously, thereby claim multi-arc ion coating again, it is the highest ion plating form of ionization level, thereby it is fast to have sedimentation velocity, and film-substrate cohesion is strong, film density height, combination reaction fully waits advantage, is mainly used in the synthetic carbon of tool and mould surface deposition, nitrogen compound class ganoine thin film field; Arc ion plating also is used for depositing the composite trim film, but the deficiency that all the time mainly has two aspects, the one, obtain to be attended by the distinctive drop of arc ion plating in the process of plasma body always and be called macrobead again because arc ions is plated in arc evaporation, erupt simultaneously with plasma body, film quality is existed contamination phenomenon, make the surface decoration quality of film seriously descend; The 2nd, the depositing temperature of arc ion plating is higher relatively, generally will maintain between 400 ℃-500 ℃, and feasible thin film deposition with material of low melting point or low tempering temperature is restricted.
Summary of the invention
Purpose of the present invention just provides a kind of can the filtration the arc ion plating macrobead and reduces more than 50%, can the intake of thin film deposition be control effectively again simultaneously, and make deposit film improve surface quality, reduced the equipment and the method for the low temperature depositing high-quality decorative film by electric arc ion plating of depositing temperature again.
Technical solution of the present invention is, a kind of equipment of low temperature depositing high-quality decorative film by electric arc ion plating, constitute by vacuum chamber 1, vacuum system 2, Stage microscope 3, cathode arc source 4, grid bias power supply 6, cathode arc source power supply 15, supply gas controller 16 and vacuumatic measuring system 17, vacuum system 2, the controller 16 of supplying gas are connected with vacuum chamber 1 with vacuumatic measuring system 17, Stage microscope 3 is rotationally connected with vacuum chamber 1, grid bias power supply 6 is connected with the rotating shaft of Stage microscope 3, cathode arc source power supply 15 is connected with cathode arc source 4, and cathode arc source 4 is connected with vacuum chamber 1; Wherein, cathode arc source 4 is the two field structures that are made of one-level magneticfield coil 8, one-level coil support cylinder 9, secondary magneticfield coil 10, secondary coil support cylinder 11 and metal cathode target 7, one-level coil support cylinder 9 is connected with secondary coil support cylinder 11, secondary coil support cylinder 11 is connected with arc source flange 12 on the vacuum chamber 1, on the back envelope flange 14 that the metal cathode target 7 that is connected with metal cathode target circulating pipe 13 is fixed on one-level coil support cylinder 9 is connected; Wherein the internal diameter of one-level coil support cylinder 9 is Φ 120-250mm, and length is 40-100mm, and the winding density of one-level coil 8 is 8-30 circle/mm, and the coil copper wire diameter is 0.5-2mm; The internal diameter of secondary coil support cylinder 11 is Φ 150-300mm, and length is 200-400mm, and it is 5-20 circle/mm that secondary coil 10 is twined density, and the coil copper wire diameter is 0.5-1.5mm.
4 total 1-24 are individual for cathode arc source.
Grid bias power supply 6 is pulsed bias power supplies.
Flange connections vacuum rubber sealing.
Use a kind of equipment of low temperature depositing high-quality decorative film by electric arc ion plating to carry out the method for low temperature depositing high-quality decorative film by electric arc ion plating, be workpiece 2 decontaminations, scale removal to be cleaned up also put into vacuum chamber 1 after the drying, vacuum chamber 1 vacuum be extracted into 3 * 10 by vacuum system 2
-2-1 * 10
-3Pa, feed working gass by the controller 16 of supplying gas and make vacuum tightness reach 0.3-5Pa, add pulsed negative bias with pulsed bias power supply 6 to Stage microscope 3 and workpiece 5 and carry out sputter clean 1-60min, the ignite electric arc of metal cathode target 13 of starter cathode arc source current 15, arc stream is 40-100A, regulating impulse negative bias then begins plated film, and the plated film time is 2-60min, unloads bias voltage at last, stop arc, stop the supple of gas or steam, outage, stove takes out workpiece after being cooled to 20-150 ℃; Wherein, in the plated film stage, one-level magneticfield coil 8 electric currents of cathode arc source 4 are 0.3-5A, and secondary magneticfield coil 6 electric currents are 0.1-5A; In the electrical parameter of pulsed negative bias, frequency is 5-100KHz, and the bias voltage amplitude is-50--1000V dutycycle 5-50%.
In the plated film stage, in the electrical parameter of pulsed bias, frequency is 5-100KHz, and the bias voltage amplitude is-50--500V that dutycycle is 5-40%.
Described working gas is an argon gas.
Working gas is argon gas and reaction gas, and the reaction gas proportion is 10-100%.
Reaction gas is the gas that carries the non-metallic element composition in the compound that obtains, and comprises nitrogen, methane, acetylene, oxygen.
The beneficial effect that the present invention reached, the one, the macrobead of arc ion plating can be filtered out more than 50%, increase substantially the depositing of thin film quality; The 2nd, the depositing temperature of matrix can be controlled between 50-500 ℃, satisfy the material surface plated film requirement of various depositing temperature restrictions.
Description of drawings
The present invention is further described below in conjunction with the drawings and specific embodiments.
Fig. 1 is the arc ion plating apparatus structural representation of of the present invention pair of field structure cathode arc source.
Among the figure: 1. vacuum chamber; 2. vacuum system; 3. Stage microscope; 4. cathode arc source; 5. workpiece; 6. pulsed bias power supply; 7. metal cathode target; 8. one-level magneticfield coil; 9. one-level magneticfield coil support cylinder; 10. secondary magneticfield coil; 11. secondary magneticfield coil support cylinder; 12. arc source flange; 13. metal cathode target circulating pipe; 14. back envelope flange; 15. cathode arc source power supply; The controller 16. supply gas; 17. vacuumatic measuring system.
Embodiment
Plate pure chromium decorating film: the cathode arc source 4 that 4 two-stage electromagnetic field filtrations are installed on the arc source flange 12 of the vacuum chamber 1 of arc ion plating apparatus, wherein, the internal diameter of one-level coil support cylinder 9 is Φ 150mm, length is 80mm, the winding density of one-level coil 8 is 10 circles/mm, and the coil copper wire diameter is 0.6mm; Secondary coil support cylinder 11 internal diameters are Φ 160mm, and length is 200mm, and it is 20 circles/mm that secondary coil 10 is twined density, and the coil copper wire diameter is 1.3mm, and metal cathode target 7 is pure chromium; One-level coil support cylinder 9 is connected with secondary coil support cylinder 11 usefulness flanges, secondary coil support cylinder 11 is connected with arc source flange 12 on the vacuum chamber 1, on the back envelope flange 14 that the metal cathode target 7 that is connected with metal cathode target circulating pipe 13 is fixed on one-level coil support cylinder 9 is connected, flange connections vacuum rubber sealing.。
With putting into the Stage microscope 3 of vacuum chamber 1 after the workpiece cleaning drying, be evacuated down to 1 * 10-3Pa; Logical argon gas is to 0.5Pa, add-1000V * 40KHz * 40% pulsed negative bias carries out sputter clean, and the time is 5min; Ignite then cathodic metal chromium target on 4 arc sources, arc stream all is adjusted into 100A, pulsed bias is adjusted to-300V * 40KHz * 50% carry out plated film; time is 50min, and plated film unloads bias voltage then, stops arc; stop the supple of gas or steam, outage is taken out workpiece after last stove is as cold as 30 ℃.The result is at the synthetic high-quality decorative chromium film that macrobead quantity is few, density is high, thickness is 2 μ m of workpiece surface deposition.
Claims (2)
1. the equipment of a low temperature depositing high-quality decorative film by electric arc ion plating, by vacuum chamber (1), vacuum system (2), Stage microscope (3), cathode arc source (4), grid bias power supply (6), cathode arc source power supply (15), controller (16) and the vacuumatic measuring system (17) of supplying gas constitutes, vacuum system (2), the controller (16) of supplying gas is connected with vacuum chamber (1) with vacuumatic measuring system (17), Stage microscope (3) is rotationally connected with vacuum chamber (1), grid bias power supply (6) is connected with the rotating shaft of Stage microscope (3), cathode arc source power supply (15) is connected with cathode arc source (4), and cathode arc source (4) is connected with vacuum chamber (1); Cathode arc source (4) is the two field structures that are made of one-level magneticfield coil (8), one-level coil support cylinder (9), secondary magneticfield coil (10), secondary coil support cylinder (11) and metal cathode target (13), one-level coil support cylinder (9) is connected with secondary coil support cylinder (11), and secondary coil support cylinder (11) is connected with vacuum chamber (1); It is characterized in that, on the back envelope flange (14) that metal cathode target (13) is fixed on one-level coil support cylinder (9) is connected; Wherein the internal diameter of one-level coil support cylinder (9) is 120-250mm, and length is 40-100mm, and the winding density of one-level coil (8) is 8-30 circle/mm, and the coil copper wire diameter is 0.5-2mm; The internal diameter of secondary coil support cylinder (11) is Φ 150-300mm, and length is 200-400mm, and it is 5-20 circle/mm that secondary coil (10) is twined density, and the coil copper wire diameter is 0.5-1.5mm.
2. the equipment of the described a kind of low temperature depositing high-quality decorative film by electric arc ion plating of use claim 1 carries out the method for low temperature depositing high-quality decorative film by electric arc ion plating, be workpiece (2) decontamination, scale removal to be cleaned up also put into vacuum chamber (1) after the drying, vacuum chamber (1) vacuum be extracted into 3 * 10 by vacuum system (2)
-2-1 * 10
-3Pa, feed working gas by the controller of supplying gas (16) and make vacuum tightness reach 0.3-5Pa, add pulsed negative bias with pulsed bias power supply (6) to Stage microscope (3) and workpiece (5) and carry out sputter clean 1-60min, the ignite electric arc of metal cathode target (13) of starter cathode arc source current (15), arc stream is 40-100A, regulating impulse negative bias then begins plated film, and the plated film time is 2-60min, unloads bias voltage at last, stop arc, stop the supple of gas or steam, outage, stove takes out workpiece after being cooled to 20-150 ℃; It is characterized in that in the plated film stage, one-level magneticfield coil (8) electric current of cathode arc source (4) is 0.3-5A, secondary magneticfield coil (6) electric current is 0.1-5A, and in the electrical parameter of pulsed negative bias, frequency is 5-100KHz, the bias voltage amplitude is-50--1000V dutycycle 5-50%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100457205A CN100460555C (en) | 2006-01-20 | 2006-01-20 | Equipment and method for low temperature depositing high-quality decorative film by electric arc ion plating |
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| CNB2006100457205A CN100460555C (en) | 2006-01-20 | 2006-01-20 | Equipment and method for low temperature depositing high-quality decorative film by electric arc ion plating |
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| CN1804105A CN1804105A (en) | 2006-07-19 |
| CN100460555C true CN100460555C (en) | 2009-02-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154615A (en) * | 2011-03-25 | 2011-08-17 | 马鞍山市威龙科工贸有限公司 | Method for strengthening automobile mould by injecting high-energy plasmas into surface of nitride gradient material |
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| CN100460556C (en) * | 2006-11-02 | 2009-02-11 | 上海交通大学 | Free open type coil filter |
| CN101643889B (en) * | 2008-08-07 | 2012-10-10 | 三菱重工业株式会社 | Part for rotary machine and its method of manufacture |
| CN101586227A (en) * | 2009-06-16 | 2009-11-25 | 晶能光电（江西）有限公司 | Adopt ion plating on growth substrates, to prepare the method for aluminium nitride material |
| CN102260850A (en) * | 2011-07-21 | 2011-11-30 | 广东世创金属科技有限公司 | Few-droplet arc target and plasma coating system comprising same |
| CN102534506A (en) * | 2012-01-20 | 2012-07-04 | 纳峰真空镀膜（上海）有限公司 | Low-temperature vacuum coating device |
| CN104046942B (en) * | 2013-03-12 | 2016-09-14 | 中国兵器工业第五九研究所 | A kind of preparation method of metal tantalum coating |
| CN104561909A (en) * | 2015-01-27 | 2015-04-29 | 大连理工常州研究院有限公司 | Ionitriding/arc ion plating surface composite modification apparatus and method |
| CN106756815A (en) * | 2015-11-20 | 2017-05-31 | 中国地质大学（北京） | A kind of magnetic filter for cathodic arc ion plating |
| CN106801216B (en) * | 2017-01-20 | 2019-04-05 | 大连理工大学 | A kind of device and method of electric arc ion-plating deposition high quality fine layers |
| CN109989026A (en) * | 2017-12-30 | 2019-07-09 | 魏永强 | The arc ion plating of multi-stage magnetic field and liner compound tube and perforated baffle combined filtration |
| CN109576652A (en) * | 2018-12-20 | 2019-04-05 | 江苏徐工工程机械研究院有限公司 | A kind of electric arc ion plating device |
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| CN102154615A (en) * | 2011-03-25 | 2011-08-17 | 马鞍山市威龙科工贸有限公司 | Method for strengthening automobile mould by injecting high-energy plasmas into surface of nitride gradient material |
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|---|---|
| CN1804105A (en) | 2006-07-19 |
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