CN100462328C - Graphite, phenolic resin, (Ba1-x-y, Srx, Pby) TiO3 based PTC thermistor and method for preparing the same - Google Patents
Graphite, phenolic resin, (Ba1-x-y, Srx, Pby) TiO3 based PTC thermistor and method for preparing the same Download PDFInfo
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- CN100462328C CN100462328C CNB2003101071519A CN200310107151A CN100462328C CN 100462328 C CN100462328 C CN 100462328C CN B2003101071519 A CNB2003101071519 A CN B2003101071519A CN 200310107151 A CN200310107151 A CN 200310107151A CN 100462328 C CN100462328 C CN 100462328C
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- graphite
- tio
- tio3
- ptc thermistor
- ptc
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Abstract
The invention discloses a graphite / phenol resin / (Ba-[1-x-y], Sr-[x], Pb-[y]TiO3 based PTC thermo-sensitive resistor and its making process, wherein its raw material and ingredients are (percentage by weight), Ba[1-x-y], Sr-[x], Pb[y]TiO3 based ceramic powder 62-78%, where x=0.005-0.35, y=0.002-0.56, graphite 14-28%, 5% phenolic resins containing PVA curing agent 8-18.6%. The invention also discloses the process for preparing the thermo-sensitive resistor.
Description
Technical field
The present invention relates to a kind of graphite/resol/(Ba
1-x-y, Sr
x, Pb
y) TiO
3Base PTC thermistor and preparation method belong to the technology of preparing of ceramic material and components and parts thereof.
Background technology
By at BaTiO
3Add micro-acceptor impurity (Mn, Fe or Cr etc.) in the base PTC stupalith, can effectively increase PTC effect (Huybrechts B, Ishizaki K, Takata M.Proposed phenomenological PTCR model andaccompanying phenomenological PTCR chart[J] .J Am Ceram Soc, 1994,77 (1), 286～288.), owing in prescription, add the recipient element of trace simultaneously, the room temperature resistivity of ptc material can be increased; If restriction recipient element consumption then can have influence on the PTC performance of material.BaTiO
3The resistance lowering of matrix PTC material is a main trend [Gene H, Haertling K.Ferroelectric ceramics:History and Technology[J] the .J Am Ceram Soc of current development, 1999,82 (4): 797～818.] and, present BaTiO
3The room temperature resistivity of base PTC stupalith is higher, this having a strong impact on PTC stupalith and device under the low voltage condition from promotion and application [the I-Nan Lin aspect temperature control heating and the overcurrent protection; Horng-YiChan; Kuo-Shung Liu.Microwave sintering of PTCR ceramics and their electrical properties[J] .Ferroelectrics Proceedings of the Tenth IEEE International Symposium on Applications ofFerroelectrics.18-21 Aug 1996.Page (s): 987～990 vol 2.].
Summary of the invention
The object of the present invention is to provide a kind of graphite/resol/(Ba
1-x-y, Sr
x, Pb
y) TiO
3Base PTC thermistor and preparation method.This PTC thermistor not only has better liftdrag performance, and has good low-resistivity performance at normal temperatures.
The present invention is realized having the PTC thermistor of low-resistivity performance under good liftdrag and the normal temperature by following technical proposals, it is characterized in that its material composition and weight percent content are:
(Ba
1-x-y, Sr
x, Pb
y) TiO
3Based ceramic powder: 62～78%, x=0.005～0.35 wherein, y=0.002～0.56;
Graphite: 14～28%;
Contain the PVA solidifying agent and be 5% resol: 8～18.6%.
Above-mentioned (Ba
1-x-y, Sr
x, Pb
y) TiO
3The component of based ceramic powder and weight percent content are:
(Ba
1-x-y，Sr
x，Pb
y)TiO
3：65.47～75.01％；
Sb
2O
3：5.81～7.26％；
Nb
2O
5：9.12～10.84％；
MnO
2：0.96～1.58％：
Al
2O
3：3.08～3.86％；
SiO
2：4.06～4.65％；
TiO
2：1.96～2.48％。
The preparation method of the PTC thermistor of said components and content comprises (Ba
1-x-y, Sr
x, Pb
y) TiO
3The preparation of based ceramic powder, batching, ball milling, granulation, compression moulding and prepare electrode process on formed body is characterized in that the (Ba with 62～78% 80～100 order numbers
1-x-y, Sr
x, Pb
y) TiO
3Base pottery oven dry powder is with after 14～28% graphite mixes 1～24h with ball milling, add lentamente 8～18.6% contain PVA solidifying agent resol, still mixing 40～150min with ball milling, mix whole mistake 200 mesh sieves in back, put into mould then with after the compression moulding of 40～100Mpa pressure, the upper and lower surface on the formed body with 40～100Mpa compacting on metal electrode, or Electroless Plating Ni electrode, or sputter Ni or Al electrode, obtain the PTC thermistor.
The outstanding advantage of compound PTC thermistor of the present invention is under the prerequisite that guarantees better liftdrag, compare with former PTC ceramic thermal resistance, the graphite that causes low room temperature resistivity of having avoided traditional PTC ceramic high temperature to burn till is oxidized, and the room temperature resistivity of compound PTC thermistor obviously reduces.
Embodiment
Embodiment: be (Ba by prescription
0.9, Sr
0.08, Pb
0.02) TiO
3+ 0.0641Sb
2O
3+ 0.1062Nb
2O
5With other a small amount of admixture 0.0127MnO
2, 0.0341Al
2O
3, 0.0462SiO
2And 0.0208TiO
2Carrying out weigh batching, is the medium wet-milling 6h that will prepare burden with the deionized water, and mix and granulation with the PVA solution of 5% (mass percent) ball milling material oven dry back, is pressed into the disk of φ 12mm * 3mm then, and moulding pressure is 30MPa.Green compact are incubated 20min down at 1250 ℃ then and burn till through binder removal, make the PTC pottery and burn till material; Or expect to place alumina crucible to be incubated 20min down the oven dry of ball milling material and burn till, make the PTC pottery and burn till material at 1250 ℃.Then this PTC pottery is burnt till material and carry out crossing 80 mesh sieves after the mechanical disintegration, the taking-up oven dry is stand-by behind the ball milling 30min again.Prepare burden and carry out ball milling mixing 3h by graphite add-on 20.1% (weight percent) and PTC pottery ball milling oven dry material 64.2% (weight percent), slowly add the resol that 15.7% (weight percent) is mixed with solidifying agent then.Said mixture is carried out mixing and ball milling 60min again, treat all by behind 200 mesh sieves, this compound is put into fixed mould, be pressed into the disk of φ 12mm * 3mm with the pressure of 40Mpa, upper and lower surface compacting aluminium electrode at the disk sample, moulding pressure is 56.6Mpa, at room temperature solidifies 24h then and makes compound PTC thermistor sample.The room temperature resistivity of this compound PTC thermistor sample is 59.35 Ω cm, and liftdrag is 2.158 * 10
3The room temperature resistivity of the PTC stupalith before compound is 331.1 Ω cm, and liftdrag is 3.82 * 10
3
Claims (1)
1. graphite/resol/(Ba
1-x-y, Sr
x, Pb
y) TiO
3Base positive temperature coefficient thermal resistor is characterized in that: its material composition and weight percent content are:
(Ba
1-x-y, Sr
x, Pb
y) TiO
3Based ceramic powder: 62～78%, x=0.005～0.35 wherein, y=0.002～0.56;
Graphite: 14～28%;
Contain the PVA solidifying agent and be 5% resol: 8～18.6%;
Wherein, (Ba
1-x-y, Sr
x, Pb
y) TiO
3The component of based ceramic powder and weight percent content are:
(Ba
1-x-y，Sr
x，Pb
y)TiO
3：65.47～75.01％；
Sb
2O
3：5.81～7.26％；
Nb
2O
5：9.12～10.84％；
MnO
2：0.96～1.58％；
Al
2O
3：3.08～3.86％；
SiO
2：4.06～4.65％；
TiO
2：1.96～2.48％，
And the sum of the weight percent content of above-mentioned seven kinds of components is 100%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101071519A CN100462328C (en) | 2003-12-02 | 2003-12-02 | Graphite, phenolic resin, (Ba1-x-y, Srx, Pby) TiO3 based PTC thermistor and method for preparing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101071519A CN100462328C (en) | 2003-12-02 | 2003-12-02 | Graphite, phenolic resin, (Ba1-x-y, Srx, Pby) TiO3 based PTC thermistor and method for preparing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1546425A CN1546425A (en) | 2004-11-17 |
| CN100462328C true CN100462328C (en) | 2009-02-18 |
Family
ID=34334343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101071519A Expired - Fee Related CN100462328C (en) | 2003-12-02 | 2003-12-02 | Graphite, phenolic resin, (Ba1-x-y, Srx, Pby) TiO3 based PTC thermistor and method for preparing the same |
Country Status (1)
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|---|---|
| CN (1) | CN100462328C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300049C (en) * | 2005-09-15 | 2007-02-14 | 武汉理工大学 | Copolymerized nylon and piezo-electric ceramic composite material and preparation |
| US8237539B2 (en) | 2010-10-07 | 2012-08-07 | Hewlett-Packard Development Company, L.P. | Thermistor |
| CN102701731B (en) * | 2012-06-21 | 2014-03-26 | 西北大学 | Novel thermosensitive ceramic material used for temperature detector |
| CN103396599B (en) * | 2013-08-23 | 2015-11-04 | 哈尔滨理工大学 | Self-limiting heating cable polymer matrix PTC matrix material and preparation method thereof |
| CN114678177A (en) * | 2022-03-30 | 2022-06-28 | 天津瑞肯新型材料科技有限公司 | Composite positive temperature coefficient thermistor material and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4957888A (en) * | 1987-08-17 | 1990-09-18 | U.S. Philips Corporation | Method of manufacturing ceramic powders having the perovskite structure |
| CN1088709A (en) * | 1993-12-04 | 1994-06-29 | 清华大学 | Thermo-sensitive resistor with multi-layer piled sheet structure |
| US5777541A (en) * | 1995-08-07 | 1998-07-07 | U.S. Philips Corporation | Multiple element PTC resistor |
-
2003
- 2003-12-02 CN CNB2003101071519A patent/CN100462328C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4957888A (en) * | 1987-08-17 | 1990-09-18 | U.S. Philips Corporation | Method of manufacturing ceramic powders having the perovskite structure |
| CN1088709A (en) * | 1993-12-04 | 1994-06-29 | 清华大学 | Thermo-sensitive resistor with multi-layer piled sheet structure |
| US5777541A (en) * | 1995-08-07 | 1998-07-07 | U.S. Philips Corporation | Multiple element PTC resistor |
Non-Patent Citations (2)
| Title |
|---|
| BaTiO3基PTC热敏电阻的生产. 张喜哲等.电子元件与材料，第8卷第4期. 1989 |
| BaTiO3基PTC热敏电阻的生产. 张喜哲等.电子元件与材料，第8卷第4期. 1989 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1546425A (en) | 2004-11-17 |
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Granted publication date: 20090218 Termination date: 20100104 |