CN100470792C - Radiating type stereo package structure and its manufacturing method - Google Patents

Radiating type stereo package structure and its manufacturing method Download PDF

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Publication number
CN100470792C
CN100470792C CNB2006100550242A CN200610055024A CN100470792C CN 100470792 C CN100470792 C CN 100470792C CN B2006100550242 A CNB2006100550242 A CN B2006100550242A CN 200610055024 A CN200610055024 A CN 200610055024A CN 100470792 C CN100470792 C CN 100470792C
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substrate
chip package
chip
fin
package
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CN101026144A (en
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刘明祥
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Abstract

A heat-radiation solid package structure includes: a heat radiation sheet with an opening, a reinforcement ring set in the opening having a first surface and a second surface, in which, a first base board of a first chip package piece is contained in the opening and set at the first surface of the ring, a second base board of a second package piece is set on the second surface of the ring, and the first base board is connected with the second base board by multiple solder balls, heat generated by the two pieces is radiated by said radiation sheet, and the reinforcement ring can fix the two pieces for preventing that they will generate warp so as to be benefit to the form of solder balls and guarantee electric transmission of the products. This invention also provides a manufacturing method.

Description

Radiating type stereo package structure and manufacture method thereof
Technical field
The present invention relates to a kind of stereo package structure (3D package) and manufacture method thereof, particularly a fin that is arranged on a chip package about a kind of utilization is located the radiating type stereo package structure and the manufacture method thereof of another chip package.
Background technology
In common semiconductor packages kenel, a kind of stereo package structure piles up a plurality of chip packages mutually, to reach multi-functional purpose, but because these chip packages are when running, a large amount of heats can be produced, therefore radiating subassembly must be installed to keep the normal working temperature of this stereo package structure.In addition, when the stacked chips packaging part, must in order to piling up mutually of chip package, thereby cause production cost to increase by a carrier (boat) positioning chip packaging part.In addition, if the scale error of carrier is excessive or the substrate of chip package has burr then can cause the joint condition of poor, and cause this stereo package structure that the problem (cold joint issue) of cold-weldable is arranged.In addition, chip package also is easier to produce the phenomenon of warpage (warpage) because of repeatedly reflow.
Figure 1 shows that existing a kind of stereo package structure 100, comprise one first chip package 110, one second chip package 120, a plurality of soldered ball 130 and a plurality of outer assembly 140 that connects.This first chip package 110 comprises one first substrate 111 and one first crystal covered chip 112; This first substrate 111 has a upper surface 113 and a lower surface 114; This first crystal covered chip 112 in the lower surface 114 of this first substrate 111, and is filled material 116 sealing projections 115 with a bottom with a plurality of projection 115 chip bondings.This second chip package 120 comprises one second substrate 121 and one second crystal covered chip 122; This second substrate 121 has a upper surface 123 and a lower surface 124; This second crystal covered chip 122 in the upper surface 123 of this second substrate 121, and is filled material 126 sealing projections 125 with a bottom with a plurality of projection 125 chip bondings.Soldered ball 130 is formed between the lower surface 124 of the upper surface 113 of first substrate 111 and second substrate 121, to electrically connect this first chip package 110 and this second chip package 120.Connect assembly 140 outward and be arranged on the lower surface 114 of first substrate 111, for engaging another electronic building brick (not shown).
First chip package 110 of this stereo package structure 100 and second chip package 120 can produce heat when running, and cause this stereo package structure 100 to cause usefulness to reduce because of temperature is too high, and this first chip package 110 is easy to generate the phenomenon of warpage (warpage) with this second chip package 120, and influences the structural strength of this stereo package structure 100 and electrically transmission.In addition, when piling up this first chip package 110 with this second chip package 120, must use a customized carrier (boat), could locate this first chip package 110 and this second chip package 120, thereby increased production cost, reduced production efficiency.
Therefore, for overcoming the defective that above-mentioned prior art exists, be necessary to provide a kind of radiating type stereo package structure and manufacture method thereof of innovation.
Summary of the invention
One of purpose of the present invention is to provide a kind of radiating type stereo package structure, comprises a fin, one first chip package and one second chip package.This fin has an opening and the reinforcing ring in this opening.One first substrate of this first chip package is contained in this opening and is arranged on a first surface of this reinforcing ring.One second substrate of this second chip package is arranged on a second surface of this reinforcing ring, fixes this first chip package and this second chip package with this reinforcing ring, prevents the situation of this first chip package and this second chip package generation warpage.
Another object of the present invention is to provide a kind of radiating type stereo package structure, its fin that comprises has an opening and the reinforcing ring in this opening, one first chip package is arranged on a first surface of this reinforcing ring, one second chip package is arranged on a second surface of this reinforcing ring, so that the heat that this first chip package and this second chip package are produced when running, can conduct to this fin by this reinforcing ring, in order to heat radiation.
A further object of the present invention is to provide a kind of radiating type stereo package structure, its fin that comprises has an opening and the reinforcing ring in this opening, one first chip package is arranged on a first surface of this reinforcing ring, and one second chip package is arranged on a second surface of this reinforcing ring.By the height of a plurality of soldered balls of this reinforcing ring restriction between this first chip package and this second chip package of this fin, to avoid taking place the empty situation of welding or opening circuit.
Another purpose of the present invention is to provide a kind of manufacture method of radiating type stereo package structure, comprise that offering an opening is provided with a reinforcing ring in a fin and in this opening, the first surface of one first chip package in this reinforcing ring is set, and the second surface of one second chip package in this reinforcing ring is set.Fix this first chip package and this second chip package by this reinforcing ring, preventing the situation of this first chip package and this second chip package generation warpage, and the heat that is produced when distributing this first chip package and the running of this second chip package with this fin.
For achieving the above object, radiating type stereo package structure of the present invention comprises a fin, one first chip package, one second chip package and a plurality of soldered ball.This fin has an opening and the reinforcing ring in this opening, and this reinforcing ring has a first surface, a second surface.This first Chip Packaging comprises one first substrate, and this first substrate is contained in this opening of this fin and is arranged on the first surface of this reinforcing ring.This second chip package comprises one second substrate, and this second substrate is arranged on the second surface of this reinforcing ring.Soldered ball is formed between second substrate of first substrate of this first chip package and this second chip package and is positioned at the reinforcing ring of this fin, to connect this first substrate and this second substrate.
Compared with prior art, radiating type stereo package structure of the present invention and manufacture method thereof provide a fin, and this fin has an opening and the reinforcing ring in this opening.This fin can reach the effect of heat radiation.In addition, this fin can be located first chip package and second chip package, engages with piling up of this second chip package in order to this first chip package, and prevents this first chip package and this second chip package generation warpage.In addition, this fin also can limit the height of the soldered ball between first chip package and second chip package, with the situation of avoiding empty weldering taking place or opening circuit.
The present invention is further illustrated below in conjunction with accompanying drawing and embodiment.
Description of drawings
Fig. 1 is the schematic cross-section of existing a kind of stereo package structure.
Fig. 2 is according to first specific embodiment of the present invention, a kind of schematic cross-section of radiating type stereo package structure.
Fig. 3 is according to first specific embodiment of the present invention, the schematic perspective view of this fin.
Fig. 4 A to 4C is according to first specific embodiment of the present invention, the schematic cross-section of this radiating type stereo package structure in manufacture process.
Fig. 5 is according to second specific embodiment of the present invention, a kind of schematic cross-section of radiating type stereo package structure.
Fig. 6 is according to the 3rd specific embodiment of the present invention, a kind of schematic cross-section of radiating type stereo package structure.
Fig. 7 is according to the 4th specific embodiment of the present invention, a kind of schematic cross-section of radiating type stereo package structure.
Embodiment
Relevant detailed description of the present invention and technology contents, existing as follows with regard to accompanying drawings:
According to first specific embodiment of the present invention, see also Fig. 2 and Fig. 3, a kind of radiating type stereo package structure 200 comprises a fin 210, one first chip package 220, one second chip package 230 and a plurality of soldered ball 240.This fin 210 has an opening 211 and the reinforcing ring 212 (stiffener ring) in this opening 211 in the present embodiment.This fin 210 has worker's type cross section, and this reinforcing ring 212 is integrally formed at this fin 210.This reinforcing ring 212 has a first surface 213 and a second surface 214, and this opening 211 manifests this first surface 213 and this second surface 214.This first chip package 220 comprises one first substrate 221.This first substrate 221 has a upper surface 222 and a lower surface 223.This first substrate 221 is contained in the opening 211 of fin 210 and is arranged on the first surface 213 of reinforcing ring 212, its can one the viscose 250 glutinous first surfaces 213 that are fixed in this reinforcing ring 212 of establishing, the situation of warpages takes place to prevent first substrate 221 of first chip package 220.This first chip package 220 comprises one first chip 224 and a plurality of projection 225 in addition.In the present embodiment, these first chip, 224 chip bondings are in the lower surface 223 of this first substrate 221, and are electrically connected to this lower surface 223 of this first substrate 221 with projection 225, and material 226 sealing projections 225 are filled in a bottom.In addition, this radiating type stereo package structure 200 comprises a plurality of outer connect assembly 260, for example soldered ball or stitch (pin).Should outer connect the lower surface 223 that assembly 260 is arranged on first substrate 221, and be revealed in the opening 211 of fin 210, for externally connecting other electronic building brick (not shown).
This second chip package 230 comprises one second substrate 231, and it has a upper surface 232 and a lower surface 233.This second substrate 231 is arranged on the second surface 214 of reinforcing ring 212, and it to prevent second substrate 231 of second chip package 230 situation of warpage takes place with another viscose 250 glutinous these second surfaces 214 that are fixed in this reinforcing ring 212 of establishing.This second chip package 230 comprises one second chip 234 and a plurality of projection 235 in addition, and this second chip 234 can be a crystal covered chip.This second chip 234 is electrically connected to the upper surface 232 of second substrate 231 with projection 235, and fills material 236 sealing projections 235 with a bottom.
Soldered ball 240 is formed between second substrate 231 of first substrate 221 of first chip package 220 and second chip package 230, and soldered ball 240 is positioned at the reinforcing ring 212 of fin 210, connecting this first substrate 221 and this second substrate 231, and first chip package 220 and second chip package 230 are piled up mutually.Preferably, can take place to prevent soldered ball 240 free welderings or situation about opening circuit by the height of these reinforcing ring 212 control soldered balls 240.
Therefore first chip package 220 of this radiating type stereo package structure 200 and second chip package 230 can not need to prepare in addition carrier (boat) by these fin 210 location.In addition, this first chip package 220 is fixed in this reinforcing ring 212 with this second chip package 230, to prevent this first chip package 220 and this second chip package 230 warpage (warpage) takes place.And, the heat that this first chip package 220 and this second chip package 230 are produced when running, can conduct to this fin 210 by first substrate 221 of this first chip package 220, second substrate 231 and this reinforcing ring 212 of this second chip package 230, and by these fin 210 heat radiations.
Fig. 4 A to Fig. 4 C is the schematic cross-section of the manufacture method of this radiating type stereo package structure 200.Shown in Fig. 4 A, at first, provide one first chip package 220, it comprises one first substrate 221 and one first chip 224.This first substrate 221 has a upper surface 222 and a lower surface 223.This first chip 224 with a plurality of projection 225 chip bondings in the lower surface 223 of first substrate 221.In addition, a plurality of first solder projection 240A are formed at the upper surface 222 of first substrate 221.
See also Fig. 4 B, then, a fin 210 (as shown in Figure 3) is set in the upper surface 222 of this first chip package 220.In the present embodiment, this fin 210 has an opening 211 and the reinforcing ring 212 in this opening 211.This reinforcing ring 212 has a first surface 213 and a second surface 214 that is revealed in this opening 211.In the present embodiment, a viscose 250 is formed at this reinforcing ring 212, fixes the first surface 213 of this first substrate 221 at this reinforcing ring 212 to stick together.
See also Fig. 4 C, afterwards, the reinforcing ring 212 of one second chip package 230 in this fin 210 is set.This second chip package 230 comprises one second substrate 231 and one second chip 234, this second chip 234 with a plurality of projection 235 chip bondings in the upper surface 232 of this second substrate 231.In the present embodiment, a viscose 250 sticks together the second surface 214 of this second chip package 230 in this reinforcing ring 212.In addition, a plurality of second solder projection 240B are formed on the lower surface 233 of this second substrate 231.This first chip package 220 is located by this fin 210 with this second chip package 230, so that the second solder projection 240B of this second chip package 230 can aim at the first solder projection 240A of this first chip package 220.Preferably, can form a scaling powder 270, so that the first solder projection 240A and the second solder projection 240B are melt into a plurality of soldered balls 240 (as shown in Figure 2) in a reflow step in the first solder projection 240A or the second solder projection 240B.And this reinforcing ring 212 of this fin 210 can limit the height of the soldered ball 240 between this first chip package 220 and this second chip package 230, with the situation of avoiding empty weldering taking place or opening circuit.Afterwards, can be provided with at the lower surface 223 of this first substrate 221 and connect assembly 260 outside a plurality of.Should outer connect the opening 211 that assembly 260 is revealed in fin 210, to become a radiating type stereo package structure 200 (as shown in Figure 2).
Fig. 5 is the radiating type stereo package structure 300 according to the present invention's second specific embodiment, comprises a fin 310, one first chip package 320, one second chip package 330 and a plurality of soldered ball 340.This fin 310 has an opening 311 and the reinforcing ring 312 in this opening 311.In the present embodiment, this reinforcing ring 312 is stepped, and has a first surface 313 and a second surface 314, and this first surface 313 is revealed in this opening 311 with this second surface 314.This first chip package 320 is arranged in this opening 311, and comprises one first substrate 321 and one first chip 324.This first substrate 321 has a upper surface 322 and a lower surface 323.This first substrate 321 is contained in the opening 311 of this fin 310 and is arranged on the first surface 313 of this reinforcing ring 310.This first chip 322 is engaged in the lower surface 324 of this first substrate 321 with a plurality of projections 325, and fills material 326 sealing projections 325 with a bottom.
This second chip package 330 comprises one second substrate 331 and one second chip 334.This second substrate 331 has a upper surface 332 and a lower surface 333.This second substrate 321 is contained in the opening 311 of this fin 310 and is arranged on the second surface 314 of this reinforcing ring 312.This second chip 334 is engaged in the upper surface 332 of this second substrate 331 with a plurality of projections 335, and fills material 336 sealing projections 335 by a bottom.Soldered ball 340 is arranged between the lower surface 333 of the upper surface 322 of this first substrate 321 and this second substrate 331.This first chip package 320 is located in this first surface 313 of this reinforcing ring 312, this second chip package 330 is located in this second surface 314 of this reinforcing ring 312, to guarantee the contraposition of piling up of this first chip package 320 and this second chip package 330; And fix this first chip package 320 and this second chip package 330 by this reinforcing ring 313, warpages take place to prevent this first chip package 320 and this second chip package 330; And this fin 310 with this reinforcing ring 312 can reach the effect of heat radiation.In addition, this has the height that stair-stepping reinforcing ring 312 can limit the soldered ball 340 between this first chip package 320 and this second chip package 330, with the situation of avoiding empty weldering taking place or opening circuit.
Fig. 6 is a kind of radiating type stereo package structure 400 according to the present invention's the 3rd specific embodiment, comprises a fin 410, one first chip package 420, one second chip package 430 and a plurality of soldered ball 440.In the present embodiment, this fin 410 has an opening 411 and the reinforcing ring 412 in this opening 411.This reinforcing ring 412 has a first surface 413 and a second surface 414.This opening 411 manifests this first surface 413 and this second surface 414.
This first chip package 420 comprises one first substrate 421, one first chip 422, many bonding wires 423 and an adhesive body 424.This first substrate 421 has a upper surface 425 and a lower surface 426.This first chip 422 is arranged on this upper surface 425, and is electrically connected to this first substrate 421 with bonding wire 423.This this first chip 422 of adhesive body 424 seal protections and bonding wire 423.This first substrate 421 is contained in this opening 411 of this fin 410 and is arranged on this first surface 413 of this reinforcing ring 412.One mucigel, 450 glutinous establishing are fixed this reinforcing ring 412 and this first substrate 421, with this first substrate 421 that prevents this first chip package 420 warpage take place.In addition, this radiating type stereo package structure 400 comprises and a plurality ofly outer connects assembly 460, and in the present embodiment, this outer assembly 460 that connects is soldered ball.Should outer connect this lower surface 426 that assembly 460 is arranged on this first substrate 421, and be revealed in this opening 411 of this fin 410.
This second chip package 430 comprises one second substrate 431, one second chip 432, many bonding wires 433 and an adhesive body 434.This second substrate 431 has a upper surface 435 and a lower surface 436.This second chip 432 is arranged on this upper surface 435 and is electrically connected to this second substrate 431 with bonding wire 433.This adhesive body 434 is formed at this upper surface 435 of this second substrate 431, with seal protection this second chip 432 and bonding wire 433.This second substrate 431 is arranged on this second surface 414 of this reinforcing ring 412, and it with this second substrate 431 that prevents this second chip package 430 warpage takes place with another mucigel 450 glutinous these second surfaces 414 that are fixed in this reinforcing ring 412 of establishing.
Soldered ball 440 is formed between this lower surface 436 of this upper surface 425 of this first substrate 421 and this second substrate 431 and is positioned at this first chip, 422 peripheries, to electrically connect this first substrate 421 and this second substrate 431.This radiating type stereo package structure 400 can take place to prevent free weldering or situation about opening circuit by the height of these reinforcing ring 412 control soldered balls 440; And this first chip package 420 and the heat that this second chip package 430 is produced when operating can dispel the heat by this fin 410.
Fig. 7 is the radiating type stereo package structure 500 according to the present invention's the 4th specific embodiment, comprises a fin 510, one first chip package 520, one second chip package 530 and a plurality of soldered ball 540.This fin 510 has an opening 511 and a first surface 512 in this opening 511 and a second surface 513.In the present embodiment, this opening 511 is stepped, and appears this first surface 512 and this second surface 513.This first chip package 520 comprises one first substrate 521, one first chip 522, many bonding wires 523 and an adhesive body 524.This first substrate 521 has a upper surface 525 and a lower surface 526.This first chip 522 is arranged on this upper surface 525 of this first substrate 521, and is electrically connected to this first substrate 521 with bonding wire 523.This adhesive body 524 sealings this first chip 522 and bonding wire 523.When first chip package 520 is incorporated into this fin 510, this first substrate 521 is arranged on this first surface 512 of this fin 510.In addition, a plurality of outer these openings 511 that assembly 550 is arranged on this lower surface 526 of this first substrate 521 and is revealed in this fin 510 that connect are for connecting other electronic installation (not shown).
This second chip package 530 comprises one second substrate 531, one second chip 532, many bonding wires 533 and an adhesive body 534.This second chip 532 is arranged on a upper surface 535 of this second substrate 531.Bonding wire 533 electrically connects this second substrate 531 and this second chip 532, and by this adhesive body 534 sealings this second chip 532 and bonding wire 533.When second chip package 530 is incorporated into this fin 510, this second substrate 531 is arranged on this second surface 513 of this fin 510.Because, this first chip package 520 is located in this first surface 512 of this fin 510, and this second chip package 530 is located in this second surface 513 of this fin 510, can guarantee the contraposition of piling up of this first chip package 520 and this second chip package 530, and the phenomenon that prevents warpage takes place, and this fin 510 can reach the effect of heat radiation.In addition, this fin 510 also can limit the height of the soldered ball 540 between this first chip package 520 and this second chip package 530, with the situation of avoiding empty weldering taking place or opening circuit.
In sum, radiating type stereo package structure of the present invention and manufacture method thereof provide a fin, and this fin has an opening and the reinforcing ring in this opening.This fin can reach the effect of heat radiation.In addition, this fin can be located first chip package and second chip package, engages with piling up of this second chip package in order to this first chip package, and prevents this first chip package and this second chip package generation warpage.In addition, this fin also can limit the height of the soldered ball between first chip package and second chip package, with the situation of avoiding empty weldering taking place or opening circuit.

Claims (20)

1, a kind of radiating type stereo package structure comprises: a fin; One first chip package comprises one first substrate; One second chip package comprises one second substrate; And a plurality of soldered balls, be formed between second substrate of first substrate of first chip package and second chip package, to connect this first substrate and second substrate; It is characterized in that:
This fin has an opening and the reinforcing ring in this opening, and this reinforcing ring has a first surface and a second surface; This first substrate is contained in the opening of this fin and is arranged on the first surface of this reinforcing ring; This second substrate is arranged on the second surface of this reinforcing ring; Described soldered ball is positioned at this reinforcing ring.
2, radiating type stereo package structure as claimed in claim 1 is characterized in that this fin has worker's type cross section.
3, radiating type stereo package structure as claimed in claim 1 is characterized in that this first chip package comprises one first chip, and this first chip is electrically connected to first substrate.
4, radiating type stereo package structure as claimed in claim 3 is characterized in that this radiating type stereo package structure further comprises a plurality ofly outer to connect assembly that it is arranged on first substrate of first chip package.
5, radiating type stereo package structure as claimed in claim 1 is characterized in that this second chip package comprises one second chip, and this second chip is electrically connected to second substrate.
6, radiating type stereo package structure as claimed in claim 1, it is characterized in that this radiating type stereo package structure further comprises at least one mucigel, it is formed on the first surface and second surface of reinforcing ring, to cohere first chip package and second chip package.
7, a kind of manufacture method of radiating type stereo package structure comprises the following steps to provide one first chip package, and this first chip package comprises one first substrate;
One fin is set in this first chip package;
One second chip package is set in this fin, this second packaging part comprises one second substrate; And
Carry out a reflow step, to form a plurality of soldered balls between this first substrate and second substrate, to connect this first substrate and second substrate; It is characterized in that:
Be provided with before this step of fin, comprise that further offering an opening is provided with a reinforcing ring in this fin and in this opening, this reinforcing ring has a first surface and a second surface; Fin is set in the step of first chip package, first substrate of this first chip package is contained in this opening of this fin and is arranged on the first surface of this reinforcing ring; Second chip package is set in the step of fin, second substrate of second chip package is arranged on the second surface of this reinforcing ring; In the reflow step, soldered ball is positioned at this reinforcing ring.
8, the manufacture method of radiating type stereo package structure as claimed in claim 7 is characterized in that this fin has worker's type cross section.
9, the manufacture method of radiating type stereo package structure as claimed in claim 7 is characterized in that this first chip package comprises one first chip, and this first chip is electrically connected to first substrate.
10, the manufacture method of radiating type stereo package structure as claimed in claim 7 is characterized in that this manufacture method comprises that further formation one viscose is in this first substrate, to stick together this reinforcing ring of this fin.
11, the manufacture method of radiating type stereo package structure as claimed in claim 7, it is characterized in that before second chip package is set, this manufacture method comprises that further formation one viscose is in this reinforcing ring of this fin, to stick together this second chip package.
12, the manufacture method of radiating type stereo package structure as claimed in claim 7 is characterized in that this manufacture method further comprises a plurality of outer first substrates of assembly in this first chip package that connect are set.
13, the manufacture method of radiating type stereo package structure as claimed in claim 12 is characterized in that described outer this opening that assembly is revealed in this fin that connects.
14, the manufacture method of radiating type stereo package structure as claimed in claim 7 is characterized in that this second chip package comprises one second chip, and this second chip is electrically connected to second substrate.
15, a kind of radiating type stereo package structure comprises: a fin; One first chip package comprises one first substrate; One second chip package comprises one second substrate; And a plurality of soldered balls, connect this first chip package and this second chip package, so that this first chip package and this second chip package pile up mutually; It is characterized in that:
This fin has an opening, and a first surface in this opening and a second surface; This first substrate is arranged on this first surface of this fin; This second substrate is arranged on this second surface of this fin.
16, radiating type stereo package structure as claimed in claim 15, the opening that it is characterized in that this fin is stepped.
17, radiating type stereo package structure as claimed in claim 15 is characterized in that this first chip package comprises one first chip, and it is electrically connected to first substrate.
18, radiating type stereo package structure as claimed in claim 15 is characterized in that this radiating type stereo package structure further comprises a plurality ofly outer to connect assembly that it is arranged on first substrate of this first chip package.
19, radiating type stereo package structure as claimed in claim 15 is characterized in that described outer this opening that assembly is revealed in this fin that connects.
20, radiating type stereo package structure as claimed in claim 15 is characterized in that this second chip package comprises one second chip, and it is electrically connected to second substrate.
CNB2006100550242A 2006-02-24 2006-02-24 Radiating type stereo package structure and its manufacturing method Active CN100470792C (en)

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CN100539131C (en) * 2007-11-29 2009-09-09 日月光半导体制造股份有限公司 Electronic element packaging structure
CN101656246B (en) * 2008-08-19 2011-11-09 南茂科技股份有限公司 Chip-stacked package structure of substrate with opening and packaging method thereof
CN102856296A (en) * 2012-09-24 2013-01-02 日月光半导体制造股份有限公司 Stacked semiconductor package element
CN108054123A (en) * 2017-12-25 2018-05-18 普聚智能系统（苏州）有限公司 The automatic rinsing table of dry ice
CN115132678B (en) * 2022-08-30 2023-03-14 北京象帝先计算技术有限公司 Wafer, wafer manufacturing method, chip manufacturing method, and electronic apparatus
CN116207050B (en) * 2023-05-05 2023-07-07 成都恪赛科技有限公司 Phased array TR chip packaging structure

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