CN100470799C - Floating resistance of I/O circuit on integrated circuit chip - Google Patents
Floating resistance of I/O circuit on integrated circuit chip Download PDFInfo
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- CN100470799C CN100470799C CN 200510104771 CN200510104771A CN100470799C CN 100470799 C CN100470799 C CN 100470799C CN 200510104771 CN200510104771 CN 200510104771 CN 200510104771 A CN200510104771 A CN 200510104771A CN 100470799 C CN100470799 C CN 100470799C
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Abstract
The invention is the I/O circuit floating resistance of the IC chip, which relates to multiple I/O circuit floating resistances integrated in IC chip using CMOS technology. Every floating resistance of the invention has a polysilicon resistance; the both end of polysilicon resistance parallels a P-type FET and an N-type FET, in which the constant-voltage end of the polysilicon resistor links the drain of the said two FETs, and the fluctuant-voltage end of the polysilicon resistance links the source of the two FETs; the gate of P-type FET connecting the ground, the gate of N-type FET connecting the voltage output of the constant-voltage controlled power supply. It solves the low precision of the polysilicon floating resistance, and the problem that need to separately design and manufacture, and the high cost of products, when there are several different I/O circuit impedances in the same IC chip. In the invention, the parasitic capacitance of floating resistance is small, which suitable for work in high-speed I/O.
Description
Technical field
The present invention relates to the resistance on a kind of integrated circuit (IC) chip, particularly relate to a kind ofly, reach more precise impedance coupling with CMOS technology integrated a plurality of I/O circuit floating resistances on integrated circuit (IC) chip.
Technical background
Generally adopt polysilicon (poly) resistance with the I/O circuit floating resistance on the integrated circuit (IC) chip of CMOS technology manufacturing, the resistance of this resistance designs by length, and precision only can reach ± and 20%.Because the resistance of the I/O circuit floating resistance on the integrated circuit (IC) chip directly influences the external impedance of I/O circuit, the resistance accuracy of the floating resistance of the I/O circuit middle impedance coupling on various High-speed IC's Chip requires to reach ± 5%-10%, so uses in the I/O circuit of the floating resistance incompatibility of polysilicon on various High-speed IC's Chip.In addition, for a kind of integrated circuit (IC) chip,, wish to have the resistance of several different I/O circuit impedance according to the difference of service condition.Owing to many,, can increase the cost of product again if same a kind of integrated circuit (IC) chip of each I/O circuit impedance kind is is all manufactured and designed separately with the I/O circuit quantity on a kind of integrated circuit (IC) chip.
Summary of the invention
The present invention aims to provide the I/O circuit floating resistance on a kind of integrated circuit (IC) chip, its available CMOS technology is simultaneously integrated a plurality of on integrated circuit (IC) chip, can select suitable resistance value during fabrication with a kind of integrated circuit (IC) chip, and resistance accuracy reaches ± 5%-10%.
Technical scheme of the present invention is: the I/O circuit floating resistance on the integrated circuit (IC) chip, and each floating resistance has a polysilicon resistance; The two ends of this a polysilicon resistance P type field effect transistor in parallel and a N type field effect transistor, wherein the voltage constant end of this polysilicon resistance connects the drain electrode of above-mentioned two field effect transistor, and the variation in voltage end of this polysilicon resistance connects the source electrode of above-mentioned two field effect transistor; The grounded-grid of P type field effect transistor, the grid of N type field effect transistor connect the control power source voltage output of a voltage constant.Utilize a P type field effect transistor in parallel and the characteristics of N type field effect transistor current characteristics complementation, form a linear resistance, the resistance precision after in parallel can reach ± 5%-10% less than its polysilicon resistance for this linear resistance and a resistance.Select the output voltage of control power supply, can change the electric current that flows through between the drain electrode of N type field effect transistor and source electrode, just change the resistance after the parallel connection.Required P type field effect transistor and N type field effect transistor can be simultaneously integrated a plurality of on integrated circuit (IC) chip with CMOS technology, and the required a plurality of polysilicon resistances integrated with the while on the integrated circuit (IC) chip cooperate the required a plurality of I/O circuit floating resistances of formation.Thereby realized purpose of the present invention.
Advise the length of the length of described P type field effect transistor less than N type field effect transistor.Can make the complementary better of a P type field effect transistor in parallel and a N type field effect transistor electric current.
The grid that connects the N type field effect transistor of each floating resistance on the particularly described integrated circuit (IC) chip by a constant control power source voltage output of output voltage.Control the resistance of all floating resistances with a control power supply, can simplify circuit structure, improve the consistency of impedance parameter.
The control power supply architecture of recommending is: the constant control power supply of described output voltage comprises an operational amplifier, a pair of divider resistance, special-purpose floating resistance, the mutually different constant-current source of a plurality of electric current and the corresponding wire jumper of a plurality of and above-mentioned a plurality of constant-current sources; One end of divider resistance connects the polysilicon resistance voltage constant end of each floating resistance; The other end ground connection of divider resistance; The input in the same way of the centre one end concatenation operation amplifier of divider resistance; Special-purpose floating resistance has a polysilicon resistance, the two ends of this a polysilicon resistance P type field effect transistor in parallel and a N type field effect transistor, wherein the voltage constant end of this polysilicon resistance connects the drain electrode of above-mentioned P type field effect transistor and above-mentioned N type field effect transistor, the variation in voltage end of this polysilicon resistance connects the source electrode of above-mentioned P type field effect transistor and above-mentioned N type field effect transistor, the grounded-grid of above-mentioned P type field effect transistor, the grid of above-mentioned N type field effect transistor connects the voltage output end of operational amplifier; The reverse input end of operational amplifier connects polysilicon resistance variation in voltage end and each wire jumper of special-purpose floating resistance; The electric current outflow end ground connection of each constant-current source, each constant-current source select the electric current of a constant-current source to flow into the reverse input end of end through the wire jumper concatenation operation amplifier of correspondence; The output of operational amplifier connects the grid of the N type field effect transistor of each floating resistance.Select to connect a wire jumper, make the reverse input end and the special-purpose floating resistance of corresponding constant-current source concatenation operation amplifier, the voltage drop that the electric current of this constant-current source forms at special-purpose floating resistance, the reverse input end current potential of decision operational amplifier, the current potential of input in the same way of this current potential and operational amplifier are the output voltage that the potential difference of an end has been determined operational amplifier output terminal in the middle of the divider resistance.
Best: the resistance of described special-purpose floating resistance is several times as much as the resistance of other each floating resistance.The resistance of special-purpose floating resistance is big, can reduce the current value of selected constant-current source, reduces circuit power consumption.
I/O circuit floating resistance on the integrated circuit (IC) chip of the present invention, utilize a P type field effect transistor in parallel and the characteristics of N type field effect transistor current characteristics complementation, the resistance precision after in parallel increases substantially less than its polysilicon resistance to form a linear resistance and a resistance.Can select to control the output voltage of power supply, the resistance after the change parallel connection.Required P type field effect transistor and N type field effect transistor can be simultaneously integrated a plurality of on integrated circuit (IC) chip with CMOS technology, cooperate the required a plurality of I/O circuit floating resistances of formation with required a plurality of polysilicon resistances simultaneously integrated on the integrated circuit (IC) chip, and shared chip area is little, be subjected to ectocines such as temperature, supply voltage little, good stability.On integrated circuit (IC) chip,, can simplify circuit structure, improve the consistency of impedance parameter by the resistance of a control power supply control multichannel I/O circuit floating resistance.Little because of the additional capacitor of integrated floating resistance simultaneously, be fit to very much the above high-bandwidth signals of 1Gbps and use, on various high-speed communication I/O, be widely used.
Description of drawings
Fig. 1 is the electric structural representation of two Low Voltage Differential Signal I/O on 17 tunnel pairs of Low Voltage Differential Signal I/O integrated circuit (IC) chip.
Fig. 2 is the electric structural representation of the embodiment of I/O circuit floating resistance on the integrated circuit (IC) chip of the present invention as the floating resistance 23 among Fig. 1.
Fig. 3 is the electric structural representation of the control power supply of Fig. 2 embodiment.
Fig. 4 is 50 ohm current curve diagram for Fig. 2 embodiment resistance.
Fig. 5 is 50 ohm mains voltage variations curve chart for Fig. 2 embodiment resistance.
Fig. 6 is 50 ohm temperature changing curve diagram for Fig. 2 embodiment resistance.
Embodiment
One, embodiment one
The electric structure of two Low Voltage Differential Signal I/O on one 17 tunnel two Low Voltage Differential Signal (LVDS) I/O integrated circuit (IC) chip, as shown in Figure 1.Between the constant-current source 11 that P type field effect transistor 21 of first group of Low Voltage Differential Signal I/O and N type field effect transistor 22 are connected on the joining power voltage vcc and the constant-current source 12 that connects ground level, the grid Sn1 of the grid Sp1 of P type field effect transistor 21 and N type field effect transistor 22 is two inputs of first group of Low Voltage Differential Signal.The signal output part A point of first group of Low Voltage Differential Signal I/O, promptly the tie point of P type field effect transistor 21 and N type field effect transistor 22 is connected to a floating resistance 23.The other end of floating resistance 23 connects at CM o'clock provides constant voltage V by an on-chip power supply 10
CM, the output voltage V that constant voltage VCM decision A is ordered
ACan only be in the variation up and down of its magnitude of voltage.A P type field effect transistor 31 and a N type field effect transistor 32 of second group of Low Voltage Differential Signal I/O also are connected between constant-current source 11 that connects the DC power supply voltage vcc and the constant-current source 12 that connects ground level, and the grid Sn2 of the grid Sp2 of P type field effect transistor 31 and N type field effect transistor 32 is two inputs of second group of Low Voltage Differential Signal.The signal output part B point of second group of Low Voltage Differential Signal I/O, promptly the tie point of P type field effect transistor 31 and N type field effect transistor 32 is connected to a floating resistance 33.The other end of floating resistance 33 connects the CM point provides constant voltage V by on-chip power supply 10
CM, the output voltage V that B is ordered
BCan only be at constant voltage V
CMThe variation up and down of magnitude of voltage.Constant voltage V
CMBe 1.25 volts (V), the output voltage V that A is ordered
AThe output voltage V of ordering with B
BExcursion at 0.85V to 1.65V.We wish DC power supply voltage vcc excursion from 4.5V to 5.5V, and range of temperature is from-20 ℃-80 ℃, and the resistance of floating resistance 23 and floating resistance 33 is 50 ohm, 60 ohm or 75 ohm, and resistance accuracy reaches ± 5%-10%.
Be the concrete enforcement structure that example illustrates us with floating resistance 23 now, the concrete enforcement structure of other floating resistance on this integrated circuit (IC) chip is identical with this example.Please see Figure 2, this floating resistance 23 has a polysilicon resistance Rpoly; The two ends of this a polysilicon resistance Rpoly P type field effect transistor P1 in parallel and a N type field effect transistor N1, wherein the voltage constant end CM of this polysilicon resistance Rpoly connects the drain electrode of above-mentioned P type field effect transistor P1 and N type field effect transistor N1, and the variation in voltage end A of this polysilicon resistance Rpoly connects the source electrode of above-mentioned P type field effect transistor P1 and N type field effect transistor N1.The grounded-grid of P type field effect transistor P1, the grid of N type field effect transistor N1 meets the voltage output end ctrl of the control power supply 20 of a voltage constant.Utilize the P type field effect transistor P1 in parallel and the characteristics of N type field effect transistor N1 current characteristics complementation, form the linear resistance that resistance value ratio is bigger, the resistance precision after in parallel can reach ± 5%-10% less than its polysilicon resistance Rpoly for this linear resistance and a resistance.Adjust the output voltage V ctr1 of control power supply 20, can change the electric current that flows through between the drain electrode of N type field effect transistor N1 and source electrode, just change the resistance after the parallel connection, the resistance that makes floating resistance 23 is 50 ohm, 60 ohm or 75 ohm.Mention the front, the constant voltage V of the voltage constant end CM of polysilicon resistance Rpoly
CMBe 1.25V, the voltage V of the variation in voltage end A of polysilicon resistance Rpoly
AExcursion at 0.85V to 1.65V, therefore please see Figure 4, curve 1 shows that P type field effect transistor P1 opens in a certain subrange, and curve 2 shows that N type field effect transistor N1 opens all the time.In the present embodiment, the length of P type field effect transistor P1 is less than the length of N type field effect transistor N1.In 0.35 micron (μ) CMOS technology, if any withstand voltage 3V (length 0.35 μ of field effect transistor) and two kinds of field effect transistor of 5V (length 0.5 μ of field effect transistor), optional 0.35 μ of length of P type field effect transistor P1.And optional 0.5 μ of length of N type field effect transistor N1.The electric current of P type field effect transistor P1 and N type field effect transistor N1 can compensate better like this.
The grid that connects the N type field effect transistor of each floating resistance on the integrated circuit (IC) chip at this routine place by the voltage output end of the constant control power supply 20 of output voltage, control the resistance of all floating resistances, to simplify circuit structure, improve the consistency of impedance parameter.The structure of control power supply 20 is please referring to Fig. 3, resistance R 1 and the resistance R 2 a pair of divider resistance that is in series, the input in the same way of the centre one end r concatenation operation amplifier U1 of this divider resistance; Resistance R 1 end of divider resistance connects the polysilicon resistance voltage constant end CM of each floating resistance; The resistance R 2 end ground connection of divider resistance.The structure of each floating resistance of similar of the special-purpose floating resistance part of control power supply 20: it has a polysilicon resistance Rpoly '; The two ends of this a polysilicon resistance Rpoly ' P type field effect transistor P1 ' in parallel and a N type field effect transistor N1 ', wherein the voltage constant end CM of this polysilicon resistance Rpoly ' connects the drain electrode of P type field effect transistor P1 ' and N type field effect transistor N1 ', the above-mentioned P type of the variation in voltage end A ' connection field effect transistor P1 ' of this polysilicon resistance Rpoly ' and the source electrode of N type field effect transistor N1 '.The grounded-grid of P type field effect transistor P1 ', the grid of N type field effect transistor N1 ' meets the voltage output end ctrl of operational amplifier U1.For reducing circuit power consumption, we are chosen to be the resistance of special-purpose floating resistance 5 times of other each floating resistance resistance: even the resistance of polysilicon resistance Rpoly ' is 5 times of polysilicon resistance Rpoly resistance, P type field effect transistor P1 ' is of a size of 1/5 of P type field effect transistor P1 size, and N type field effect transistor N1 ' is of a size of 1/5 of N type field effect transistor N1 size.The reverse input end of the variation in voltage end A ' concatenation operation amplifier U1 of special-purpose floating resistance and three wire jumper X1, X2, X3.The electric currents of corresponding respectively three the mutually different constant-current source DL1 of electric current of the opposite side of three wire jumper X1, X2, X3, DL2, DL3 flow into end, the electric current outflow end ground connection of three constant-current source DL1, DL2, DL3.The output ctrl of operational amplifier U1 draws, and connects the grid of the N type field effect transistor that comprises each floating resistance.
This routine selected depth feedback makes operational amplifier U1 be operated in the linear amplification state, and the voltage of the input in the same way of note operational amplifier U1 is U+, and electric current is I+; The voltage of reverse input end is U-, and electric current is I-; According to integrated operational amplifier " empty short empty disconnected " characteristic: U+ ≈ U-; I+ ≈ I-; Vr ≈ VA ' ≈ R2* (V
CM-0)/(R1+R2)=4K* (1.25-0)/(1K+4K)=1 volt.It is 1 milliampere that the electric current of three constant-current source DL1, DL2, DL3 is selected the electric current of constant-current source DL1, and the resistance of corresponding special-purpose floating resistance is 250 ohm, and the resistance of each floating resistance is 50 ohm; The electric current of constant-current source DL2 is 0.833 milliampere, and the resistance of corresponding special-purpose floating resistance is 300 ohm, and the resistance of each floating resistance is 60 ohm; The electric current of constant-current source DL3 is 0.667 milliampere, and the resistance of corresponding special-purpose floating resistance is 375 ohm, and the resistance of each floating resistance is 75 ohm.Therefore, when the resistance of each floating resistance of needs is 50 ohm, select to connect wire jumper X1, make reverse input end and the special-purpose floating resistance of corresponding constant-current source DL1 concatenation operation amplifier U1; When the resistance of each floating resistance of needs is 60 ohm, select to connect wire jumper X2, make reverse input end and the special-purpose floating resistance of corresponding constant-current source DL2 concatenation operation amplifier U1; When the resistance of each floating resistance of needs is 75 ohm, select to connect wire jumper X3, make reverse input end and the special-purpose floating resistance of corresponding constant-current source DL3 concatenation operation amplifier U1.
Please see Figure 4, curve 3 shows that when the resistance of floating resistance 23 is 50 ohm to the 1.65V range, the electric current linearity that flows through between the A of floating resistance 23 end and the CM end can meet the demands voltage VA at 0.85V.
Please see Figure 5, when the resistance of floating resistance 23 is 50 ohm, power source voltage Vcc from 4.5V to the 5.5V range, power source voltage Vcc is that the current curve of 4.5V, the current curve that power source voltage Vcc is 5.0V, three curves of current curve that power source voltage Vcc is 5.5V almost overlap, and changes very I to meet the demands.
Please see Figure 6, when the resistance of floating resistance 23 is 50 ohm, temperature is-20 ℃-80 ℃ a range, temperature for-20 ℃ current curve, current curve that temperature is 20 ℃, current curve that temperature is 40 ℃, current curve that temperature is 60 ℃, temperature from being that five curves of current curve of 80 ℃ are at voltage V
AVery little for changing below the 1.40V, almost overlap; At voltage V
AFor the variation more than the 1.40V also can meet the demands.
The above only is preferred embodiment of the present invention, does not limit scope of the invention process with this, and the equivalence of doing according to technical scheme of the present invention and description changes and modification, all should belong to the scope that the present invention is contained.
Claims (5)
1. the I/O circuit floating resistance on the integrated circuit (IC) chip, each floating resistance has a polysilicon resistance; It is characterized in that: the two ends of this a polysilicon resistance P type field effect transistor in parallel and a N type field effect transistor, wherein the voltage constant end of this polysilicon resistance connects the drain electrode of above-mentioned two field effect transistor, and the variation in voltage end of this polysilicon resistance connects the source electrode of above-mentioned two field effect transistor; The grounded-grid of P type field effect transistor, the grid of N type field effect transistor connect the control power source voltage output of a voltage constant; Utilize a P type field effect transistor in parallel and the characteristics of N type field effect transistor current characteristics complementation, form a linear resistance, the resistance precision after in parallel reaches ± 5%-10% less than its polysilicon resistance for this linear resistance and a resistance.
2. the I/O circuit floating resistance on the integrated circuit (IC) chip according to claim 1 is characterized in that: the length of described P type field effect transistor is less than the length of N type field effect transistor.
3. the I/O circuit floating resistance on the integrated circuit (IC) chip according to claim 1 and 2 is characterized in that: the grid that is connected the N type field effect transistor of each floating resistance on the described integrated circuit (IC) chip by a constant control power source voltage output of output voltage.
4. the I/O circuit floating resistance on the integrated circuit (IC) chip according to claim 3 is characterized in that: the constant control power supply of described output voltage comprises an operational amplifier, a pair of divider resistance, special-purpose floating resistance, the mutually different constant-current source of a plurality of electric current and the corresponding wire jumper of a plurality of and above-mentioned a plurality of constant-current sources; One end of divider resistance connects the polysilicon resistance voltage constant end of each floating resistance; The other end ground connection of divider resistance; The input in the same way of the centre one end concatenation operation amplifier of divider resistance; Special-purpose floating resistance has a polysilicon resistance, the two ends of this a polysilicon resistance P type field effect transistor in parallel and a N type field effect transistor, wherein the voltage constant end of this polysilicon resistance connects the drain electrode of above-mentioned P type field effect transistor and above-mentioned N type field effect transistor, the variation in voltage end of this polysilicon resistance connects the source electrode of above-mentioned P type field effect transistor and above-mentioned N type field effect transistor, the grounded-grid of above-mentioned P type field effect transistor, the grid of above-mentioned N type field effect transistor connects the voltage output end of operational amplifier; The reverse input end of operational amplifier connects polysilicon resistance variation in voltage end and each wire jumper of special-purpose floating resistance; The electric current outflow end ground connection of each constant-current source, each constant-current source select the electric current of a constant-current source to flow into the reverse input end of end through the wire jumper concatenation operation amplifier of correspondence; The output of operational amplifier connects the grid of the N type field effect transistor of each floating resistance.
5. the I/O circuit floating resistance on the integrated circuit (IC) chip according to claim 4 is characterized in that: the resistance of described special-purpose floating resistance is several times as much as the resistance of other each floating resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510104771 CN100470799C (en) | 2005-12-30 | 2005-12-30 | Floating resistance of I/O circuit on integrated circuit chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510104771 CN100470799C (en) | 2005-12-30 | 2005-12-30 | Floating resistance of I/O circuit on integrated circuit chip |
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| Publication Number | Publication Date |
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| CN1992263A CN1992263A (en) | 2007-07-04 |
| CN100470799C true CN100470799C (en) | 2009-03-18 |
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| CN 200510104771 Expired - Fee Related CN100470799C (en) | 2005-12-30 | 2005-12-30 | Floating resistance of I/O circuit on integrated circuit chip |
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- 2005-12-30 CN CN 200510104771 patent/CN100470799C/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| 双MOS晶体管等效电阻. 沈杰，靳东明，李志坚.清华大学学报（自然科学版），第39卷第5期. 1999 |
| 双MOS晶体管等效电阻. 沈杰，靳东明，李志坚.清华大学学报（自然科学版），第39卷第5期. 1999 * |
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