CN100477098C - Plating apparatus and plating method - Google Patents
Plating apparatus and plating method Download PDFInfo
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- CN100477098C CN100477098C CN 200480010700 CN200480010700A CN100477098C CN 100477098 C CN100477098 C CN 100477098C CN 200480010700 CN200480010700 CN 200480010700 CN 200480010700 A CN200480010700 A CN 200480010700A CN 100477098 C CN100477098 C CN 100477098C
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
- H01L2224/1146—Plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Abstract
A plating apparatus has an ashing unit (300) configured to perform an ashing process on a resist (502) applied on a surface of a seed layer (500) formed on a substrate (W), and a pre-wetting section (26) configured to provide hydrophilicity to a surface of the substrate after the ashing process. The plating apparatus includes a pre-soaking section (28) configured to bring the surface of the substrate into contact with a treatment solution to clean or activate a surface of the seed layer formed on the substrate. The plating apparatus also includes a plating unit (34) configured to bring the surface of the substrate into a plating solution in a plating tank while the resist is used as a mask so as to form a plated film (504) on the surface of the seed layer formed on the substrate.
Description
Technical field
The present invention relates to a kind of electroplating device and electro-plating method that is used to electroplate substrate surface, relate in particular to a kind of electroplating device and electro-plating method that is used for forming on the surface at semiconductor wafer when the mask when photoresist projection (projection electrode), described projection provides and being electrically connected of electrode that encapsulates or semiconductor chip.
Background technology
For example, in tape automated bonding (TAB) or upside-down method of hull-section construction, carried out the last outstanding connection electrode (projection) that forms the multilayer laminated structure of gold, copper, scolder or nickel or these metals of predetermined portions (electrode) on semiconductor chip surface widely, described semiconductor chip has the interconnection that is formed on wherein, and is electrically connected with the electrode or the TAB electrode of encapsulation through protruding will the interconnection.In order to form projection, used the whole bag of tricks, comprise plating, vapor deposition, printing and form ball bumps.In view of the increase of the I/O number of terminals in the semiconductor chip in recent years and the trend that develops to the direction of fine pitch more, electroplating technology is used more continually, because electroplating technology can be realized meticulousr processing and have metastable performance.
In electroplating technology, on the precalculated position of substrate surface, form projection in such a way with interconnection.In this technology, make widely with photoresist as mask.At first, shown in Figure 1A, layer (a feeding layer) is presented in deposit inculating crystal layer 500 conducts on the surface of substrate W by sputter or vapor deposition.Then, photoresist 502 is applied on the whole surface of inculating crystal layer 500, so that make it have for example height H of 20 to 120 μ m.After this, exposing on the surface of photoresist 502 and develop, is the about 20 opening 502a to about 200 μ m thereby form diameter D on the precalculated position in photoresist 502.Then, shown in Figure 1B, deposit is as the metal of raised material in opening 502a by electroplating technology, and for example Au or Cu are so that form in opening 502a and growth plated film 504.Shown in Fig. 1 C, photoresist 502 is peelled off and removed from the surface of substrate W.Then, shown in Fig. 1 D, with inculating crystal layer 500 unwanted parts from the surface etching of substrate W with remove.Subsequently, as required, carry out reflux technique, thereby form hemisphere jut 506, shown in Fig. 1 E.
Electroplating technology can be divided into ejection-type (jet-type) or cup type (cup-type) electroplating technology and immersion-type electroplating technology, electroplate liquid upwards is ejected into substrate in ejection-type or cup type electroplating technology, as be in the semiconductor wafer of level, thereby the substrate surface of electroplated faces down, and in the immersion-type electroplating technology, substrate vertically is immersed in the electroplate liquid in the electroplating bath, carry electroplate liquid from the bottom of electroplating bath simultaneously, so that the overflow plating groove.According to the immersion-type electroplating technology, be easy to remove the bubble that adverse effect is plated substrate quality, and can reduce the track (footprint) of electroplating device.In addition, can make the immersion-type electroplating technology be suitable for the variation of wafer size at an easy rate.Thus, the immersion-type electroplating technology is considered suitable for and convexes to form technology, and this projection is filled big relatively hole and needed considerable time to finish electroplating technology.
Thereby when forming plated film in the opening in resist and on surface, form projection such as the substrate of semiconductor wafer, because resist generally made by the hydrophobicity material with low moisture adsorbability, so electroplate liquid unlikely enters in the opening in the resist.Correspondingly, shown in the imaginary line among Figure 1A, may in electroplate liquid, produce air bubble 508.This air bubble 508 is tending towards remaining among the opening 502a, thereby produces the plating defective such as insufficient plating.
In order to prevent this plating defective, can in electroplate liquid, add surfactant, thereby reduce the surface tension of electroplate liquid, so that at an easy rate electroplate liquid is incorporated in the opening of resist.Yet, when reducing the surface tension of electroplate liquid, may in electroplate liquid, produce air bubble at the electroplate liquid circulation time.In addition, when adding to new surfactant in the electroplate liquid, undesired deposit may take place, thereby increased the amount that is captured to the organic substance in the plated film.Like this, surfactant may influence the performance of plated film nocuously.
Utilize the conventional electroplating device that uses the immersion-type electroplating technology, may discharge air bubble from the opening of resist.This electroplating device adopts the substrate holder of fixing such as the substrate of semiconductor wafer under certain state, thereby exposes the substrate surface of electroplated, the periphery edge and the rear surface of seal substrate simultaneously.Substrate holder is immersed in the electroplate liquid with substrate, thus the surface of plating substrate.Like this, according to the conventional electroplating device that uses the immersion-type electroplating technology, be difficult to make the whole electroplating technology automation that from the load substrates to the electroplating technology, unloads substrate afterwards.
In addition, the conventional electroplating device that is used to convex to form generally has: the electroplating part that is used to carry out electroplating technology; Be used to follow the additional process parts such as the additional process of cleaning and pretreating process of electroplating technology; And the transfer automaton that is used for translate substrate between electroplating part and additional process parts.Form opening on the precalculated position in the resist on substrate.Substrate is contained in the cassette of substrates.From cassette of substrates, take out a substrate.Then, deposit and growth are as the metal of raised material, for example Au or Cu in the opening of the resist on substrate.Afterwards, substrate is carried out aftertreatment technology, for example clean and dry processing, and turn back to cassette of substrates.
The resist that the substrate that has utilized electroplating device to electroplate and turned back to cassette of substrates is transferred to is subsequently peeled off unit, etching unit etc., and substrate is contained in the cassette of substrates simultaneously.Peel off in the unit at resist, from the sur-face peeling of substrate with remove resist.In the etching unit, remove the unwanted part of inculating crystal layer from the surface of substrate.
Yet, consider the manufacturing delivery cycle of the batch process of the product that is suitable for limited kinds, the conventional electroplating device that is used to convex to form is designed to carry out the technology till electroplating technology, and does not carry out the technology after the electroplating technology.Correspondingly, the conventional electroplating device that is used to convex to form can not the complete continuously series of process that convexes to form.In addition, the big space of conventional electroplating device needs that is used to convex to form is used for the additional process unit, and for example resist is peeled off unit and etching unit, and the flexibility that is provided with is less.
Summary of the invention
In view of above-mentioned defective has been made the present invention.Therefore, first purpose of the present invention provides a kind of electroplating device and electro-plating method, electroplate liquid can be incorporated into reliably in the opening in the resist that is applied on the substrate surface, and in electroplate liquid, do not add any surfactant, and can under the situation that does not produce any plating defective such as insufficient plating, realize electroplating technology.
Second purpose of the present invention provides a kind of electroplating device and electro-plating method, can utilize the immersion-type technology that is easy to discharge air bubble to form the plated film that is suitable for such as the projection electrode of projection.
The 3rd purpose of the present invention provides a kind of electroplating device, and this electroplating device can be carried out the technology that comprises such as the electroplating technology that convexes to form technology continuously, and can reduce to be used for the space of entire equipment, and is suitable for the small serial production of the product of kind on a large scale.
According to first scheme of the present invention, a kind of electroplating device is provided, it has: incineration unit constitutes this incineration unit on the lip-deep resist that puts on the inculating crystal layer that is formed on the substrate and to carry out ashing treatment; And pre-wetted part, it is constituted after ashing treatment provides hydrophily for substrate surface.This electroplating device comprises the pre-soaking parts, it is constituted substrate surface is contacted with treatment fluid, thereby cleans or activate the surface that is formed on the inculating crystal layer on the substrate.This electroplating device also comprises electroplating unit, it is constituted substrate surface is entered in the electroplate liquid in the electroplating bath, and resist is as mask, so that form plated film on the surface that is formed on the inculating crystal layer on the substrate simultaneously.
When electroplating substrate resist be as mask simultaneously, be hydrophobicity because resist makes the surface of substrate, so substrate surface unlikely contact with electroplate liquid, generation plating defective thus, for example insufficient plating.Incineration unit is carried out ashing treatment on the resist that is putting on before the electroplating technology on the substrate surface.Ashing treatment can make the hydrophobic surface of resist form hydrophilic surface again.Like this, the surface of substrate becomes and can contact with electroplate liquid.In addition, can be after ashing treatment in pre-wetted part, on substrate surface, carry out hydrophily and handle, thereby water replaces being formed on the gas in the opening in the resist, and further replace water with electroplate liquid.Like this, can prevent to electroplate defective, for example insufficient plating.
Incineration unit can be constituted resist is applied at least a in plasma, light and the electromagnetic wave, thereby on resist, carry out ashing treatment.Apply when comprising plasma, ultraviolet ray and far ultraviolet high energy light or electromagnetic wave when incineration unit is constituted, then energetic ion, photon or electronics and resist collision activates gas thereby produce.Ion, photon and electronics and activation gas can decompose and remove organic substance, for example resist residue.Organic substance from resist extracts hydrogen, perhaps cuts the main chain or the side chain of the organic substance in the resist 502, removes pollutant and the substrate surface of recombinating from substrate surface thus.It is inner or outside that incineration unit can be arranged on the framework of electroplating device.
Pre-wetted part can comprise being constituted as substrate is immersed in pre-wetting groove in the pure water, perhaps is constituted as the pre-wetting device that sprays pure water by injector to substrate surface.Pre-wetted part can be under the vacuum basically or be in less than under the atmospheric air pressure.Pre-wetted part can comprise the degasification device that is used for removing from pure water air.
Pre-wetted part can comprise a plurality of pre-wetted portions with difference in functionality.For example, electroplating device can comprise the pre-wetted portions of the immersion-type that adopts de aerated water, the pre-wetted part of ejection-type etc.In this case, the suitable pre-wetted portions of Scheme Choice according to the rules.Utilize this set, can eliminate the restriction that the type owing to pre-wetted part causes, and this electroplating device can be carried out various types of processing technology.
The pre-soaking parts can comprise the presoaking tank of preserving treatment fluid, and this treatment fluid comprises at least a in the reductive water of Ozone Water, acid solution, alkaline solution, acid degreaser, the solution that contains developer, the solution that contains anticorrosive additive stripping liquid controlling and electrolyte.For example, when substrate surface with such as the treatment fluid (acid solution) of sulfuric acid or hydrochloric acid solution when contacting, can etching be formed on the lip-deep of inculating crystal layer and have high-resistance oxide-film, thereby remove this oxide-film and expose the clean metallic surfaces of inculating crystal layer.In addition, can handle substrate, handle with acid solution then with Ozone Water.
Perhaps, the pre-soaking parts can comprise the presoaking tank of preserving treatment fluid, and this treatment fluid comprises acid solution or acid degreaser, so that substrate is being carried out electrolytic treatments as under the state of negative electrode on substrate in treatment fluid.
Electroplating unit can comprise the anode that is arranged in the electroplate liquid and can be used to measure the anode weight measurement device of anode weight.Anode weight measurement device can comprise load unit.Utilize this set, with so far on the basis of the magnitude of current that flows to anode the situation of indirect Estimation anode weight compare, can measure the consumption of anode more accurately.Therefore, can accurately determine replace the time of anode.Even during electroplating technology, also can measure the weight of anode.Like this, even during continuous electroplating technology, also can accurately determine replace the time of anode.Thereby, can predictably operate electroplating device.
Electroplating bath can comprise the anode that is arranged in the electroplate liquid, be arranged on virtual (dummy) anode and single power supply in the electroplating bath, this power supply is constituted optionally apply voltage to the anode that is used for the actual electrical depositing process with to the virtual anodes that is used for virtual electroplating technology.Generally speaking, do not using the power supply that when replacing electroplate liquid, is used for virtual plating during the electroplating technology.Like this, can not to use and provide this power supply for a long time be very uneconomic to the power supply that is used for virtual plating.Utilize above-mentioned setting, can switch single power supply, so that carry out virtual electroplating technology and actual electrical depositing process.Like this, the independent current source that is used for virtual plating can be cancelled, and the quantity of power supply can be reduced.Single power supply can be constituted applying of switched voltage automatically, so that after having finished virtual electroplating technology, carry out the actual electrical depositing process.
This electroplating device can comprise the electroplate liquid administrative unit, and it is constituted the composition that management will flow to the electroplate liquid of electroplating unit.The electroplate liquid administrative unit can automatically be carried out the interpolation of composition not enough in the analysis of the composition in the electroplate liquid and the electroplate liquid, and this all carried out with hand in the past.Like this, the electroplate liquid administrative unit can make every kind of composition in the electroplate liquid remain in the predetermined scope.Owing to utilize the electroplate liquid of so management to carry out electroplating technology, therefore can keep being formed on superperformance (composition), good surface appearance and the good thickness evenness of the plated film on the substrate.The electroplate liquid administrative unit can be arranged on the inside of frame or the outside of electroplating device.
The electroplate liquid administrative unit can be constituted by the composition of FEEDBACK CONTROL and/or feedfoward control analysis and/or estimation electroplate liquid with to electroplate liquid and add not enough composition.For example, the electroplate liquid administrative unit is extracted a part of electroplate liquid as sample and analyze it from electroplating bath.Can comprise that the feedfoward control of disturbance of substrate quantity of electroplating time or plating or the combination of FEEDBACK CONTROL and feedfoward control add composition not enough with respect to scheduled volume in the electroplate liquid to by the FEEDBACK CONTROL on the basis of the analysis of being undertaken by the electroplate liquid administrative unit, assessment.Like this, every kind of composition in the electroplate liquid can remain in the preset range.
This electroplating device can comprise and is constituted as the communication device that carries out information communication by computed communication network.This communication device can will for example be transferred to suitable unit or device about the information of electroplating the result by computed communication network.Like this, required information is transmitted mutually by communication device, so that control these unit or device on the basis of information, thereby realizes full automatic electroplating technology.Communication device can be arranged on the inside of frame or the outside of electroplating device.
This electroplating device can comprise that resist peels off the unit, constitutes it from the sur-face peeling that is formed on the inculating crystal layer on the substrate and removes resist as mask.Resist is peeled off inside of frame or the outside that the unit can be arranged on electroplating device.Consider from processed continuously angle, wish in by the substrate holder stationary substrate resist resist on peeling off at the bottom of the unit peeling liner.Peel off resist substrate afterwards and can turn back to cassette of substrates.
This electroplating device can comprise that inculating crystal layer removes the unit, and it is constituted the unwanted part of removing the inculating crystal layer that is formed on the substrate.Inculating crystal layer is removed inside of frame or the outside that the unit can be arranged on electroplating device.Consider from processed continuously angle, wish that inculating crystal layer is removed the unwanted part that the inculating crystal layer on the substrate is removed in the unit in by the substrate holder stationary substrate.Remove inculating crystal layer substrate afterwards and can turn back to cassette of substrates.
This electroplating device can comprise and is constituted as the annealing unit that the plated film that is formed on the substrate surface is annealed.This annealing unit can be arranged on the inside of frame or the outside of electroplating device.
This electroplating device can comprise and is constituted as the reflux unit that the plated film that is formed on the substrate surface is refluxed.This reflux unit can be arranged on the inside of frame or the outside of electroplating device.
This electroplating device can comprise and is constituted as the neutralisation unit of carrying out neutralisation treatment on substrate surface.After substrate being electroplated and cleaned, the acid or the alkali composition that are included in the electroplate liquid may be retained on the substrate.Utilize neutralisation unit, owing to electroplating technology after, on substrate, carry out neutralisation treatment, so can eliminate the harmful effect that the resist stripping technology that carries out and inculating crystal layer are removed technology after electroplating technology from acid or alkali.For example, neutralisation treatment liquid can comprise the weak caustic solution that contains tertiary sodium phosphate.Neutralisation unit can be arranged on the inside of frame or the outside of electroplating device.
This electroplating device can comprise and is constituted as the visual detection unit that detects the outward appearance be formed on the plated film on the substrate surface.Some substrate may be owing to a variety of causes has defective plated film outward appearance, and described reason comprises the undesired of electroplate liquid, substrate and electroplating device.Do not stop electroplating device if proceed electroplating technology when producing defective substrate, then the quantity of defective substrate will increase.Visual detection unit is carried out vision-based detection and notifying operation person when plated film has defective outward appearance to plated film.At this moment, stop this electroplating device, and in the substrate processing data, write down this defective substrate.Like this, the quantity of defective substrate can be reduced, and defective substrate can be on the basis of substrate processing data, removed.Visual detection unit can be arranged on the inside of frame or the outside of electroplating device.Visual detection unit can be constituted the outward appearance that detects plated film according to contact or noncontact mode.
This electroplating device can comprise the film thickness measuring unit, it is constituted measure the thickness that is formed on the plated film on the substrate surface.The thickness that is formed on the plated film on the substrate can be according to changing from being formed on the pattern on the substrate and the condition effect of equipment, electroplate liquid and substrate.In some cases, uniformity (within wafer uniformity) may exceedingly reduce in the wafer of the thickness of plated film, thereby can not satisfy the index restriction.If the operation electroplating device is to electroplate substrate continuously, then the quantity of defective substrate may increase.Even uniformity is in the index restriction in the wafer of thickness, also can be according to electroplating technology needs glossing afterwards.In this case, the polished amount that is required must be set.The film thickness measuring unit can be constituted to measure and be formed on of the whole lip-deep distribution of the thickness of the plated film on the substrate at substrate.According to measurement result, the film thickness measuring unit determines whether substrate has good quality.If substrate does not have good quality, then this substrate is recorded in the substrate processing data.According to the ratio of the defective substrate that writes down in the substrate processing data, stop this electroplating device, and the notifying operation person occurs unusually.Like this, can remove inhomogeneity defective substrate in the wafer of thickness, and under situation about having, the required plated film amount that will polish can be set as the glossing of subsequent technique with low plated film.The film thickness measuring unit can be constituted thickness according to contact or non-contact mode measuring plated film.
This electroplating device can comprise electroplates the area measurement unit, and it is constituted the real area of the plated film that measurement will form on substrate surface.Need to electroplate area, so that determine the plating condition.Yet, can not know in some cases or can not accurately know the plating area.Electroplate the area measurement unit and can measure the real area (plating area) that forms plated film.Like this, can accurately determine current value, this current value is determined the plating condition.Correspondingly, can in predetermined electroplating time, accurately obtain to have the plated film of predetermined thickness.Particularly, under the situation of once electroplating a substrate, only, current density just can electroplate, so that have predetermined thickness to substrate with different plating areas with electroplating time by being set.Thereby, go far towards setting in scheme.
This plating area measurement unit can be arranged on the inside of frame or the outside of electroplating device.This plating area measurement unit can be constituted to the substrate transfer electric current, so that measure real area.This plating area measurement unit can be constituted the surface of scanning substrate optically, so that measure real area.For example, when the peripheral part seal substrate and by substrate holder under the state of the substrate surface that will electroplate from outer exposed removably during stationary substrate, scan substrate surface optically, electroplate area thereby measure.
Thereby this electroplating device can comprise and is constituted as the polishing unit that the surface of plated film is polished the thickness of regulating plated film.This polishing unit can be arranged on the inside of frame or the outside of electroplating device.This polishing unit can be constituted and carry out chemico-mechanical polishing or mechanical polishing, thereby the surface of plated film is polished.
This electroplating device can comprise the chemical liquids regulon, it is constituted remove the metal impurities that are blended in the electroplate liquid or the catabolite of organic impurities or generation.In order to keep the assessed for performance of deposited film, the electroplate liquid that uses in electroplating technology should be updated periodically according to the level of the catabolite that is blended in impurity level in the electroplate liquid or accumulation.Discarded old electroplate liquid except the special electroplate liquid such as gold plating bath, has increased the burden of cost and environment thus.The chemical liquids regulon can be removed impurity and the catabolite that is included in the old electroplate liquid, so that increase the renewal frequency of electroplate liquid.Like this, can reduce the burden of cost and environment.The chemical liquids regulon can be arranged on the inside of frame or the outside of electroplating device.The chemical liquids regulon can comprise electrolytic treatments parts, ion-exchange parts, activated carbon treatment parts and condense and precipitate at least a in the parts.
This electroplating device can comprise the chemical liquids supply and reclaim the unit, it is constituted to electroplating bath supplying chemical liquid with from electroplating bath reclaim chemical liquids.Utilize the chemical liquids supply and reclaim the unit, can handle at an easy rate safely not only to equipment or unit but also to human body and apply the high corrosion of adverse effect or harmful chemical liquids, often do not handle chemical liquids because require the operator.Chemical liquids supply and recovery unit can be arranged on the inside of frame or the outside of electroplating device.
This chemical liquids supply and recovery unit can comprise according to the fixing chemical liquids container of replaceable mode.With this chemical liquids supply with reclaim the unit and constitute from the chemical liquids container and reclaim chemical liquids to the chemical liquids container to electroplating bath supplying chemical liquid and from electroplating bath.Commercially available chemical liquid bath or bottle can be fixed as the chemical liquids container and according to replaceable mode.Like this, chemical liquids can directly be fed to electroplating bath and directly be recovered to obtainable chemical liquid bath or bottle from electroplating bath from obtainable chemical liquid bath or bottle.When chemical liquid bath or bottle become empty during at supplying chemical liquid, expression should be replenished or with add full chemical liquid bath or bottle replace this chemistry liquid bath or bottle the signalisation operator.At this moment, interrupt the supply of chemical liquids.Fill or with add full chemical liquid bath the bottle replaced chemical liquid bath or the bottle after, restart supplying chemical liquid.When chemistry liquid bath or bottle become full when in the recovery chemical liquids, replace this chemistry liquid bath or bottle or should emit the signalisation operator of chemical liquids with the chemical liquid bath or the bottle of sky from chemical liquid bath or bottle with representing.At this moment, interrupt the recovery of chemical liquids.When this chemistry liquid bath or bottle have been replaced by the chemical liquid bath of sky or bottle or become empty, restart the recovery of chemical liquids.
This electroplating device can comprise the electroplate liquid regeneration unit, it constituted removes the organic substance that is included in the electroplate liquid, thus the regeneration electroplate liquid.During electroplating technology, for example, exceed than excessive increase that the electroplate liquid of preset range or additive or surfactant have decomposed but the electroplate liquid that still remains on wherein as refuse can be regenerated by the electroplate liquid regeneration unit such as the composition of the additive of organic principle or surfactant, and replace, thereby reduced the cost and the workload of replacing significantly with new electroplate liquid without electroplate liquid.Particularly, use, electroplate liquid can be regenerated to the degree substantially the same with new electroplate liquid with the electroplate liquid administrative unit.The electroplate liquid regeneration unit can be arranged on the inside of frame or the outside of electroplating device.
This electroplate liquid regeneration unit can be constituted by charcoal filter and remove organic substance.This electroplating device can have the electroplate liquid circulatory system and electroplating bath, and this circulatory system is used to make the electroplate liquid electroplate liquid regeneration unit of flowing through, and it comprises interchangeable charcoal filter.Utilize this electroplate liquid circulatory system, electroplate liquid can flow through the charcoal filter in the electroplate liquid regeneration unit, thereby removes the refuse that organic substance and organic substance as additive in the electroplate liquid resolve into.Like this, the electroplate liquid of therefrom having removed additive component (organic substance) can turn back to electroplating bath.
This electroplating device can comprise the exhaust-gas treatment unit, with its constitute from the gas that electroplating device, produces or fog, remove harmful components and with innocuous gas by the outside of discharge of pipes to electroplating device.Generally speaking, gas that produces in electroplating device or fog are harmful to miscellaneous equipment or facility.The discharge duct of drawing from electroplating device generally connects and joins total air escape pipe to.Correspondingly, in electroplating device, do not have processed waste gas may with the waste gas reaction from miscellaneous equipment, thereby miscellaneous equipment or facility are applied adverse effect.The exhaust-gas treatment unit can be removed pernicious gas and fog and waste gas is incorporated into the total air escape pipe from waste gas, thereby prevents the adverse effect to miscellaneous equipment or facility.Like this, can reduce burden to the harmful components of removing miscellaneous equipment or facility.The exhaust-gas treatment unit can be arranged on the inside of frame or the outside of electroplating device.
The exhaust-gas treatment unit can be constituted to handle and remove harmful components by the wet process that utilize to absorb liquid, the dry-cure that utilizes absorbent or by the condensation liquefaction of cooling.The spacer that electroplating bath can have first chamber of preserving acid electroplating liquid, preserve second chamber that contains the cyanogen electroplate liquid and first chamber and second chamber are separated.First chamber can comprise the blast pipe that is used for discharging the sour gas that is produced by the acid electroplating liquid in first chamber.Second chamber can comprise the blast pipe that contains the dicyanogen body that the cyanogen electroplate liquid produces that contains that is used for discharging by in second chamber.For example,, then can mix electroplate liquid or gas, contain the dicyanogen body thereby produce if in identical electroplating device, utilize the electroplating technology of acid electroplating liquid and utilize the electroplating technology that contains the cyanogen electroplate liquid.In order to prevent this defective, these technologies are carried out in the electroplating device that separates so far.Utilize above-mentioned setting, can separately discharge the sour gas that produces by acid electroplating liquid and contain the dicyanogen body, mix, contain the dicyanogen body thereby produce so that prevent electroplate liquid or gas by what contain that the cyanogen electroplate liquid produces.Like this, can in identical electroplating device, carry out the electroplating technology that utilizes acid electroplating liquid continuously and utilize the electroplating technology that contains the cyanogen electroplate liquid.Contain the cyanogen electroplate liquid and can comprise gold plating bath or plating solution for silver-plating.
This electroplating device can comprise the waste water reclamation unit that is constituted as regenerative wastewater, described waste water uses in electroplating unit and emits from electroplating unit, and utilize at least a portion regenerative wastewater to be used for electroplating technology again, simultaneously with the outside of remaining discharge of wastewater to electroplating device.Cleaning in the electroplating technology needs a large amount of clean water.Have a large amount of clean water of high cleanliness and the processing that the waste water that uses in electroplating technology carries out is produced very big burden to existing facility.Utilize the waste water reclamation unit, electroplating device has the system of sealing wholly or in part of the waste water of the use therein that is used to regenerate.Like this, can reduce the amount of clean water and reduced burden to the required waste water treatment of equipment with high cleanliness.The waste water reclamation unit can be arranged on the inside of frame or the outside of electroplating device.
The waste water reclamation unit can be constituted by at least a in miniature filtration, ultra-violet radiation, ion-exchange, ultrafiltration and the reverse osmosis waste water is regenerated.A part of using in electroplating unit or all clean water can be stored in the groove of waste water reclamation unit and be recovered therein.Then, a part or all recycled waters can be used as clean water, and all the other recycled waters can be discharged into this facility or tank.
According to alternative plan of the present invention, a kind of electroplating device is provided, it has: the load/unload parts that are constituted as the box of loading and unloading accommodating substrates; Be arranged on the transducer of the size that is used for detecting the substrate that receives at box in the load/unload parts; And a plurality of instruments of the size of the corresponding substrate that will electroplate.This electroplating device comprises the tool storage that stores a plurality of instruments and is constituted as the electroplating part of carrying out electroplating technology at least.This electroplating device also comprises controller and conveyer, described controller is constituted from a plurality of instruments the instrument of selecting corresponding size by sensor, described conveyer is constituted instrument that preservation selected by controller and sends it to electroplating part.
If electroplating device is designed to the size of the substrate that correspondence will electroplate, then needs a plurality of electroplating devices to come corresponding each substrate dimension.Correspondingly, in the clean room, need to be used to install and such as the large space of equipment such as power supply.Utilize above-mentioned setting, single electroplating device can be carried out electroplating technology having on the substrate of different size, thereby can reduce requisite space, institute's energy requirement and required cost in the expensive clean room, can electroplate substrate simultaneously with different size.
According to third party's case of the present invention, a kind of electroplating device is provided, it has a plurality of electroplating baths, and each electroplating bath has electroplate liquid and anode therein.This electroplating device comprises single power supply, this power supply is constituted optionally apply voltage between the anode in substrate and a plurality of electroplating bath, so that carry out continuous electroplating technology.
Like this, use single power supply can reduce the quantity of electroplating power supply.Correspondingly, can make this electroplating device compact dimensions.In addition, when in electroplating power supply, breaking down, before electroplating substrate or when electroplating substrate, can interrupt electroplating technology.Correspondingly, needn't abandon this substrate, and can electroplate this substrate by the electroplating power supply of having fixed.
A plurality of electroplating baths can contain different kinds of metals.This electroplating device can comprise and be used for detecting the transducer of time that substrate is immersed in the electroplate liquid of a plurality of electroplating baths, and the switch that can be used to switch single power supply on the basis from the signal of transducer.
According to cubic case of the present invention, provide a kind of electro-plating method that on substrate surface, forms plated film.On the surface that is formed on the inculating crystal layer on the substrate, apply resist.After the cineration technics of resist, on substrate surface, carry out hydrophilic treated, thereby provide hydrophily to substrate surface.After hydrophilic treated, clean or activate substrate surface.Substrate surface is immersed in the electroplate liquid, simultaneously with resist as mask so that carry out electroplating technology, thereby on substrate surface, form plated film.
Hydrophilic treated can comprise the hydrophilic treated of carrying out two or more continuously.After electroplating technology, can peel off and remove resist from substrate surface.That can remove the inculating crystal layer that is formed on the substrate surface does not need part.Can anneal to the plated film that is formed on the substrate surface.Can the plated film that be formed on the substrate surface be refluxed.After electroplating technology, can on substrate surface, carry out neutralisation treatment.Can detect the outward appearance that is formed on the plated film on the substrate surface.Can measure the thickness that is formed on the plated film on the substrate surface.Can measure the real area that will on substrate surface, form plated film.Can the plated film that be formed on the substrate surface be polished, thus the thickness of adjusting plated film.
Utilize above-mentioned setting, can reliably electroplate liquid be incorporated in the opening of the resist on the substrate surface and not need to add any surfactant, thereby can realize without any electroplating technology such as the plating defective of insufficient plating.In addition, can utilize immersion-type technology automatically to form the plated film that is applicable to such as the projection electrode of projection, this immersion-type technology is easy to discharge air bubble.
According to the 5th scheme of the present invention, a kind of electroplating device with electroplating unit is provided, this electroplating unit is constituted forming on the substrate surface on the surface that plated film is being formed on the inculating crystal layer on the substrate simultaneously apply resist as mask.This electroplating device comprises that being constituted as the resist of peeling off and remove resist from the surface of inculating crystal layer peels off the unit and be constituted as the etching unit that does not need part of removing the inculating crystal layer that is formed on the substrate surface.The unit peeled off by this electroplating unit, resist and the etching unit intactly combines each other.
Because electroplating unit, the unit peeled off by resist and the etching unit intactly combines each other, therefore electroplating technology can be carried out continuously, technology removed by resist and inculating crystal layer is removed technology.In addition, this electroplating device can be carried out desirable electroplating technology neatly.
This electroplating device can comprise the cleaning unit that is constituted as the cleaning substrate and be constituted as the pretreatment unit that carried out pretreating process before electroplating.This electroplating device can comprise and is constituted as the reflux unit that the plated film that is formed on the substrate surface is refluxed.This plated film can form projection.
Utilize above-mentioned setting, can comprise the technology that convexes to form of electroplating technology continuously, so that reduce the space that is used for equipment.In addition, this electroplating device can realize being suitable for the desirable electroplating technology of the small serial production of various products.
From becoming apparent below in conjunction with above and other objects of the present invention, feature and advantage the description of the drawings, wherein accompanying drawing illustrates the preferred embodiments of the present invention by way of example.
The accompanying drawing summary
Figure 1A to 1E is presented at the profile that forms the technology of projection (projection electrode) on the substrate;
Fig. 2 is the schematic plan view that shows according to the electroplating part in the electroplating device of first embodiment of the invention;
Fig. 3 is the plane graph of the substrate holder in the electroplating part shown in the displayed map 2;
Fig. 4 is the amplification profile of the electroplating unit in the electroplating part shown in Fig. 2;
Fig. 5 is the plane graph that shows the electroplating device that comprises electroplating part shown in Figure 2 and other each unit;
Fig. 6 is presented at the flow chart of removing substrate technology before in the electroplating device shown in Figure 5 from substrate holder;
Fig. 7 is the flow chart that is presented at the technology after substrate holder is removed substrate in the electroplating device shown in Figure 5;
Fig. 8 is the schematic plan view that shows according to the electroplating device of second embodiment of the invention; And
Fig. 9 is the schematic plan view that shows according to the electroplating device of third embodiment of the invention.
Implement best mode of the present invention
With reference to Figure 1A to 9 electroplating device according to an embodiment of the invention is described below.Identical or corresponding parts are represented with identical or corresponding reference marker in institute's drawings attached, and no longer repeat specification below.
Fig. 2 is the schematic plan view that shows according to the electroplating part in the electroplating device of first embodiment of the invention 1.As shown in Figure 2, electroplating part 1 has rectangular frame 2; Two box platforms 12, each box platform is used for placing the cassette of substrates of holding such as the substrate of semiconductor wafer 10 thereon; Be used for aiming at the orientation plane of substrate or the aligner of recess at predetermined direction; And cleaning and drying device 16, be used for clean electroplating substrate and with the high speed rotating substrate so that dry substrate.The identical circumference setting in the framework 2 of box platform 12, aligner 14 and cleaning and drying device 16.Electroplating part 1 comprise along the tangent line setting of this circumference be used for substrate is loaded on the substrate holder 18 and from the substrate load/unload unit 20 of substrate holder 18 unloading substrates.Electroplating part 1 also has the supercentral substrate-transferring (transmission automaton) 22 that is used for transmitting substrate between box platform 12, aligner 14, cleaning and drying device 16 and substrate load/unload unit 20 that is arranged on circumference.
Electroplating part 1 has the accumulator 24 that is used to store or temporarily receive substrate holder 18, pre-wetting groove (pre-wetted part) 26, presoaking tank (pre-soaking parts) 28, be used for pure water clean substrate surface the first rinse bath 30a, be used for from the substrate that cleaned except that the bellows 32 that anhydrates, the second rinse bath 30b and the electroplating bath 34 that is used to clean substrate surface.Accumulator 24, pre-wetting groove 26, presoaking tank 28, the first rinse bath 30a, bellows 32, the second rinse bath 30b and electroplating bath 34 set gradually from substrate load/unload unit 20 in framework 2.Thereby pre-wetting groove 26 constituted substrate is immersed in the pure water provides hydrophily to substrate surface.For example, the treatment fluid etching that presoaking tank 28 is constituted utilization such as sulfuric acid or hydrochloric acid solution has the high-resistance oxidation film that is formed on the seed crystal surface, thereby removes the surface of the inculating crystal layer that oxidation film and cleaning or activation expose.Electroplating bath 34 has and overflows groove 36 and be arranged on a plurality of electroplating units 38 that overflow in the groove 36.Each electroplating unit 38 constituted fix a substrate therein, so that this substrate is electroplated with copper.In the present embodiment, in electroplating bath 34, on substrate, carry out the copper depositing process.Yet the present invention also goes for nickel, scolder or gold and electroplates.
In the present embodiment, pre-wetted part comprises the pre-wetting groove 26 that is used for substrate is immersed in pure water.Yet pre-wetted part can comprise the pre-damping device that is used for spraying to substrate surface by sprayer pure water.Pre-wetted part preferably is under the vacuum basically or is under the pressure below atmospheric pressure.Perhaps, the pure water that flow to pre-wetted part can outgas by degasser.
In addition, electroplating part 1 has a pre-wetting groove (pre-wetted part) 26 in the example shown.Yet electroplating part 1 can have the different a plurality of pre-wetted portions that are provided with.Specifically, electroplating part 1 can have a plurality of pre-wetted portions, and it comprises the pre-wetted portions of the immersion-type that uses above-mentioned de aerated water, the pre-wetted portions of ejection-type etc.In this case, pre-wetted portions that can be suitable according to Scheme Choice.Utilize this set, can eliminate because the type of pre-wetted part and, and this electroplating device can be carried out various types of technologies the restriction of technology.
Carry the reductive water of acid solution such as sulfuric acid or hydrochloric acid solutions, Ozone Water, alkaline solution, acid degreaser, the solution that contains developer, the solution that contains anticorrosive additive stripping liquid controlling, electrolyte etc. to presoaking tank 28.Can select the type of the solution that will use according to the purpose of electroplating.In addition, can handle substrate, handle with acid solution then with Ozone Water.Perhaps, can in acid solution or acid degreaser, on substrate, carry out electrolytic treatments as under the state of negative electrode at substrate.
Electroplating part 1 also has along the unit 20,24,26,28,30a, 30b and the 34 substrate holder conveyers (substrate-transferring) 40 that are provided with.Substrate holder conveyer 40 transmits with substrate substrate holder 18 between unit 20,24,26,28,30a, 32,30b and 34.Substrate holder conveyer 40 comprises second conveyer 44 that is used for transmitting first conveyer 42 of substrate holder 18 between substrate load/unload unit 20 and the accumulator 24 and being used for transmission substrate holder 18 between accumulator 24, pre-wetting groove 26, presoaking tank 28, rinse bath 30a and 30b, bellows 32 and electroplating bath 34.
Electroplating part 1 is included in a plurality of blade driving unit 46 of overflowing on the relative side of groove 36 and substrate holder conveyer 40.Each blade driving unit 46 drives blade 202 (see figure 4)s that are arranged in each electroplating unit 38.Blade 202 usefulness act on the stirring rod of stirring electroplate liquid.
Substrate load/unload unit 20 has track 50 and can be along the paperback support plate 52 of track 50 horizontal slips.Load plate 52 and be supported on two substrate holder 18 that are set parallel to each other under the level.Transmit between substrate in substrate holder 18 and the substrate-transferring 22, transmit between another and the substrate-transferring 22 of another substrate in substrate holder 18 then.
Fig. 3 is the plane graph that shows substrate holder 18 shown in Figure 2.As shown in Figure 3, each substrate holder 18 has the fixed support part 54 of flat rectangular plate form and the moveable support member 58 of annular.Moveable support member 58 is fixed on the fixed support part 54 under the state that it can open and close through hinge 56.Clamping ring 62 is fixed on the moveable support member 58 on the relative side of moveable support member 58 and fixed support part 54.Clamping ring 62 supports by stretch out the bolt 64 that is passed in the clamping ring 62 the elongated hole 62a that forms along circumferencial direction from moveable support member 58.Like this, clamping ring 62 is constituted be rotatable and be non-removable from moveable support member 58.
When moveable support member 58 was in open mode, substrate suitably inserted and is arranged in the central area of fixed support part 54.Then, moveable support member 58 is through hinge 56 closures.Then, clamping ring 62 turns clockwise, so that the excrescence 68 of clamping ring 62 is slided in the bottom of L shaped ratchet 66.Like this, moveable support member 58 is fixed and is locked in the fixed support part 54.When clamping ring 62 was rotated counterclockwise, the excrescence 68 of clamping ring 62 skidded off from L shaped ratchet 66, thereby opens moveable support member 58 from fixed support part 54.
When moveable support member 58 is locked in the fixed support part 54, as mentioned above, make to be arranged on the lip-deep sealing gasket of moveable support member 58 towards fixed support part 54
(not shown) extruding substrate surface is so that provide reliable sealing.Simultaneously, substrate is electrically contacted on the position of sealed pad sealing with the outer electrode (not shown) that is arranged on the fixed support part 54.
In the present embodiment, lock and open moveable support member 58 by rotation clamping ring 62.Load plate 52 and have the locking/unlocking mechanism that is arranged on flat-top one side.Locking/unlocking mechanism has the corresponding locational pin of hole 62b in the clamping ring 62 that is arranged on substrate holder 18, and wherein substrate holder 18 is placed on and loads on the plate 52 and be arranged near the center of loading plate 52.So that in pin patchhole 62b the time, pin rotates clamping ring 62 thus around the center rotation of clamping ring 62 when loading that plate 52 raises.Load plate 52 and have only a locking/unlocking mechanism.After locked/unlocking mechanism in being placed on two substrate holder 18 of loading on the plate 52 locked or opens, loading plate 52 flatly slided, thereby locked or open in the substrate holder 18 another.
Each substrate holder 18 has be used to detect the transducer whether substrate contacts with contact point when substrate being loaded in the substrate holder 18.This transducer is to controller (not shown) output signal.Each substrate holder 18 also has a pair of handle 76 of the end that is arranged on fixed support part 54.Handle 76 is essentially T shape and as support section, is used for support substrates fixture 18 when transmitting or hang substrate holder 18.The peripheral upper wall engagement of the outstanding end of handle 76 and accumulator 24 is so that make substrate holder 18 fixing under the vertical hanging state.The conveyer 42 of substrate holder conveying device 40 is caught the handle 76 of substrate holder 18 fixing under the vertical hanging state and is transmitted substrate holder 18.The outstanding end of handle 76 also with the peripheral upper wall engagement of pre-wetting groove 26, presoaking tank 28, rinse bath 30a and 30b, bellows 32 and electroplating bath 34, thereby substrate holder 18 is fixed under the vertical hanging state.
Fig. 4 illustrates the profile of an electroplating unit 38.As shown in Figure 4, electroplating unit 38 has anode 200 and blade (stirring rod) 202.Anode 200 is arranged in the electroplating unit 38 and is in when substrate holder 18 is arranged on the precalculated position on the position on the surface of substrate W.Blade 202 substantially perpendicularly be arranged in the electroplating unit 38 and be in anode 200 and substrate W between.Blade 202 constituted to be parallel to substrate W according to the reciprocating motion mode by blade driving unit 46 and to move.
Therefore, blade 202 is arranged between substrate W and the anode 200 and is parallel to substrate W reciprocating motion.Correspondingly, electroplate liquid stream is equated along the surface of substrate W, on the whole surface of substrate W, form uniform plated film thus.
In the present embodiment, electroplating unit 38 also has adjustable plate (mask) 204, and it has the centre bore 204a between blade 202 and the anode 200.The size of centre bore 204a is corresponding to the size of substrate W.Adjustable plate 24 reduces the current potential of the peripheral part of substrate W, so that the thickness of plated film is equated.
Like this, the weight of anode 200 can directly be measured by load unit 208.Correspondingly, can be than the consumption that the situation of the weight of estimation anode 200 is measured anode 200 more accurately on the basis of the magnitude of current that flows to anode 200 in the past.Therefore, can accurately determine replace the time of anode 200.The weight of anode 200 even can during electroplating technology, measure.Like this, even during continuous electroplating technology, also can accurately determine replace the time of anode 200.Thereby this electroplating device can predictably be operated.
Electroplating unit 38 is included in the power supply 210 that applies voltage between anode 200 and the substrate W.Anode 200 is connected to the anode of power supply 210.Be connected to the negative electrode of power supply 210 by substrate holder 18 by the inculating crystal layer 500 (seeing Figure 1A) of the fixing substrate W of substrate holder 18.For example, power supply 210 also is used for being arranged between virtual anodes (not shown) in the electroplating bath 34 and the negative electrode in the process of replacing electroplate liquid and applies voltage, so that carry out virtual electroplating technology.Specifically, power supply 210 applies voltage and changes voltage application between the inculating crystal layer 500 of anode 200 and substrate W, so that apply voltage between virtual anodes and negative electrode, is used to carry out virtual electroplating technology.
Generally speaking, do not using the power supply that when replacing electroplate liquid, is used for virtual plating during the actual electrical depositing process.Like this, can not use and be provided with it for a long time be uneconomic to the power supply that is used for virtual plating.In the present embodiment, can switch single power supply 210, so that carry out virtual electroplating technology and actual electrical depositing process.Like this, the power supply that is used for virtual plating can be eliminated, and the quantity of power supply can be reduced.
For the ease of the switching of power supply 210, power supply 210 should preferably automatically switch, so that carry out the actual electrical depositing process after finishing virtual electroplating technology.
Fig. 5 is the plane graph that shows the electroplating device that comprises electroplating part 1 shown in Figure 2 and other each unit.Although Fig. 5 illustrates the outside that each unit is arranged on the framework 2 of electroplating part 1, each unit can be arranged on the inside of the framework 2 of electroplating part 1.Part in these unit or all these unit can be arranged on the outside of the framework 2 of electroplating part 1.
This electroplating device comprises incineration unit 300, and it is used for carrying out ashing treatment (seeing Figure 1A) on the lip-deep resist 502 of the inculating crystal layer 500 that puts on substrate.Incineration unit 300 constituted apply high energy light or electromagnetic wave, comprise plasma, ultraviolet ray and far ultraviolet.Thereby, energetic ion, photon or electronics and resist 502 collisions, thus active gases produced, and the organic substance of this active gases from resist 502 extracts hydrogen or cuts off the main chain or the side chain of the organic substance in the resist 502.Like this, incineration unit 300 is carried out ashing treatment on the surface of resist 502.
When substrate being electroplated as mask the time with resist, be hydrophobicity because resist makes substrate surface, so substrate surface unlikely contact with electroplate liquid, produce plating defective thus such as insufficient plating.In the present embodiment, incineration unit 300 is carried out ashing treatment on the resist 502 that is putting on before the electroplating technology on the substrate surface.Ashing treatment can be reassembled as hydrophilic surface with the hydrophobic surface of resist 502.Like this, the surface of substrate becomes and may contact with electroplate liquid.In addition, hydrophily is handled and can be carried out on substrate surface in pre-wetting groove 26 after ashing treatment, thereby water is replaced the gas (seeing Figure 1A) among the opening 502a that is formed in the resist 502, and further replaces water with electroplate liquid.Like this, can prevent plating defective such as insufficient plating.
This electroplating device also comprises electroplate liquid administrative unit 302, is used to manage the composition of the electroplate liquid that flows to electroplating bath 34.Electroplate liquid administrative unit 302 is extracted a part of electroplate liquid as sample and analyze it from electroplating bath.Can comprise electroplating time or electroplate the feedfoward control of disturbance of quantity of substrate or the combination of FEEDBACK CONTROL and feedfoward control and the composition not enough with respect to scheduled volume added in the electroplate liquid by the FEEDBACK CONTROL on the basis of the analysis of being undertaken by electroplate liquid administrative unit 302, assessment.Like this, every kind of composition in the electroplate liquid can remain in the preset range.
Electroplate liquid administrative unit 302 can automatically be analyzed the composition in the electroplate liquid and add not enough composition in the electroplate liquid, and this was all by manual execution in the past.Like this, electroplate liquid administrative unit 302 can make every kind of composition in the electroplate liquid remain in the preset range.Owing to utilize the electroplate liquid of so management to carry out electroplating technology, therefore can keep being formed on the excellent homogeneity of superperformance (composition), good appearance and the thickness of the plated film on the substrate.
This electroplating device comprises the communicator 304 that is used for by computed communication information.This communicator 304 will about the information of electroplating result etc. by with electroplating part 1 in the unit or the communication network of other cell interconnection shown in device, incineration unit 300, electroplate liquid administrative unit 302 and Fig. 5 be transferred to suitable unit or device.Like this, required information transmit mutually by communicator 304, so as on the basis of information control unit or device, thereby realization fully automatic electric depositing process.
This electroplating device comprises that also resist is peeled off unit 306, inculating crystal layer is removed unit 308, annealing unit 310 and reflux unit 312.After electroplating technology, resist is peeled off unit 306 and will be formed on the substrate resist 502 as mask and be immersed in temperature in 50 to 60 ℃ the solvent such as acetone for example, thereby peels off and remove resist 502.Inculating crystal layer is removed unit 308 and is removed the unwanted a part of inculating crystal layer 500 (seeing Fig. 1 C) after electroplating technology that is formed on the substrate surface.310 pairs of annealing units are formed on plated film 504 on the substrate surface anneal (seeing Fig. 1 D).The plated film 504 that 312 pairs of reflux units are formed on the substrate surface refluxes.
In the present embodiment, this electroplating device has annealing unit 310 and reflux unit 312.Plated film 504 refluxes by reflux unit 312, thereby forms projection 506 (seeing Fig. 1 E), and this projection 506 becomes circle by surface tension.Perhaps, for example under 100 ℃ or higher temperature, anneal, thereby remove residual stress in the projection 506 by 310 pairs of plated films 504 of annealing unit.Reflux and anneal and to carry out simultaneously or separately by thermal treatment unit.
Consider from processed continuously angle, wish that resist peels off unit 306 resist at the bottom of the peeling liner when substrate is fixing by substrate holder, and wish that inculating crystal layer removes the inculating crystal layer on the substrate is removed in unit 308 when substrate is fixing by substrate holder unwanted part.The substrate of peeling off the substrate after the resist or removing after the inculating crystal layer can turn back to cassette of substrates.
This electroplating device comprises the neutralisation unit 314 with neutralization chamber, is used for carrying out on substrate surface immediately after electroplating technology neutralisation treatment.Neutralisation unit (neutralization chamber) 314 constituted be immersed in the neutralisation treatment liquid, thereby on substrate, carry out neutralisation treatment electroplating the substrate that cleaned with water.Neutralisation treatment liquid is set to little acid or weakly alkaline, so that have the characteristic opposite with electroplate liquid.
After electroplating and having cleaned substrate, the acid or the alkali composition that are included in the electroplate liquid may remain on the substrate.According to present embodiment, owing to electroplating technology after, on substrate, carry out neutralisation treatment immediately, so can eliminate acid or alkali are removed processing to the resist lift-off processing of carrying out and inculating crystal layer after electroplating technology adverse effect.For example, neutralisation treatment liquid can comprise the weakly alkaline solution that contains tertiary sodium phosphate.
This electroplating device also comprises visual detection unit 316, is used for detecting according to contact or noncontact mode the outward appearance of the plated film 504 that is formed on the substrate surface.316 pairs of plated films of visual detection unit 504 carry out vision-based detection and pass through communicator 304 notifying operation persons when plated film 504 have defective appearance.At this moment, stop electroplating device, and can in the substrate processing data, write down this defective substrate.Like this, the quantity of defective substrate can be reduced, and the defective substrate can be on the basis of substrate processing data, removed.
Some substrate may be owing to a variety of causes has the defective outward appearance of plated film 504, and described reason comprises the undesired of electroplate liquid, substrate and electroplating device.If electroplating technology carries out continuously and do not stop electroplating device when producing the defective substrate, then the quantity of defective substrate increases.Electroplating device in the present embodiment can prevent this defective.
This electroplating device comprises film thickness measuring unit 318, is used for being formed on according to contact or non-contacting mode measurement the thickness of the plated film 504 on the substrate surface.Film thickness measuring unit 318 is constituted measurement be formed on the thickness of the plated film 504 on the substrate in the whole lip-deep distribution of substrate.According to measurement result, film thickness measuring unit 318 determines whether substrate has good quality.If substrate does not have good quality, then this substrate is recorded in the substrate processing data.Ratio according to being recorded in the defective substrate in the substrate processing data stops this electroplating device, and by communicator 304 abnormal conditions is notified to the operator.
The thickness that is formed on the plated film on the substrate can be according to changing from being formed on the pattern on the substrate and the condition effect of equipment, electroplate liquid and substrate.In some cases, uniformity reduces excessively in the wafer of the thickness of plated film, so that the restriction of discontented toe mark.If operate this electroplating device so that continuously substrate is electroplated, then the quantity of defective substrate may increase.Even uniformity then can be according to electroplating technology needs glossing afterwards in the index limited field in the wafer of thickness.In this case, required polished amount must be set.In the present embodiment, the thickness of plated film 504 is measured in film thickness measuring unit 318, so that remove the defective substrate, described defective substrate has the interior uniformity of wafer of low plated film thickness, thereby is arranged on the required plated film amount that will polish in the polishing unit 322.
This electroplating device comprises electroplates area measurement unit 320, is used to measure the real area that will form plated film 504.Before electroplating technology, by for example measuring to the substrate transfer electric current.Need to electroplate area and determine the plating condition.Yet, do not knowing in some cases or can not accurately know the plating area.In the present embodiment, before electroplating technology, measure the real area (plating area) that will form plated film 504.Like this, can accurately determine the current value of plating condition.Thereby, can in predetermined electroplating time, accurately obtain to have the plated film of predetermined thickness.Particularly, under the situation of once electroplating a substrate, can only, current density electroplate substrate, so that have predetermined thickness with different plating areas with electroplating time by being set.Thereby, go far towards the setting of scheme.
Electroplate the area measurement unit and can comprise measurement mechanism, be used for before electroplating technology, scanning optically the surface of substrate, electroplate area thereby measure.For example, in the peripheral part seal substrate, and by substrate holder stationary substrate removably under making the state of the substrate surface that will electroplate outside being exposed to.In this case, when scanning substrate surperficial optically, can be easily and measure apace and electroplate area.
This electroplating device also comprises polishing unit 322, is used for the surface of the plated film 504 (seeing Fig. 1 E) of substrate being polished by chemico-mechanical polishing (CMP) or mechanical polishing (MP), thus the thickness of adjustment plated film 504.
This electroplating device comprises the chemical liquids supply and reclaims unit 324, is used for chemical liquids is flowed to electroplating bath 34 and reclaims chemical liquids from electroplating bath 34.Like this, chemical liquids supply and recovery unit 324 flow to chemical liquids electroplating bath 34 and reclaim chemical liquids from electroplating bath 34.Thereby, can be easy to handle safely not only to equipment or unit but also to human body and apply the high corrosion of adverse effect or harmful chemical liquids, because the operator needn't often handle chemical liquids.
Chemical liquids supply and recovery unit 324 are constituted from carrying chemical liquids and reclaim chemical liquids from electroplating bath 34 to the chemical liquids container to electroplating bath 34 according to the fixing chemical liquids container of replaceable mode.Specifically, commercially available chemical liquid bath or bottle can be fixed as the chemical liquids container and according to replaceable mode.Like this, chemical liquids is directly flowed to electroplating bath 34 and directly reclaims to obtainable chemical liquid bath or bottle from electroplating bath 34 from obtainable chemical liquid bath or bottle.
When chemistry liquid bath when carrying chemical liquids or bottle become empty, by communicator 304 will represent to replenish or with add full chemical liquid bath or bottle this chemistry liquid bath of replacement or bottle the signalisation operator.At this moment, interrupt the conveying of chemical liquids.At chemical liquid bath or bottle has been filled or with after adding full chemical liquid bath or bottle replacing it, restart to carry chemical liquids.
When chemical liquid bath or bottle become full when reclaiming chemical liquids, will represent and to replace this chemistry liquid bath or bottle or should discharge the signalisation operator of chemical liquids with empty chemical liquid bath or bottle from chemical liquid bath or bottle by communicator 304.At this moment, interrupt the recovery of chemical liquids.After chemical liquid bath or bottle have been replaced with empty chemical liquid bath or bottle or become sky, restart to reclaim chemical liquids.
This electroplating device comprises electroplate liquid regeneration unit 326, is used for removing the organic substance that electroplate liquid contains by charcoal filter, thus the regeneration electroplate liquid.This electroplating device has electroplate liquid circulatory system (not shown), is used to make electroplate liquid to flow through electroplate liquid regeneration unit 326 and electroplating bath 34, and wherein said electroplate liquid regeneration unit 326 comprises interchangeable charcoal filter.Utilize this electroplate liquid circulatory system, electroplate liquid flows through the charcoal filter in the electroplate liquid regeneration unit 326, thereby removes in the electroplate liquid organic substance as additive.Like this, the electroplate liquid of having removed adding ingredient (organic substance) can turn back to electroplating bath 34.
During electroplating technology, for example, decompose but can regenerate by electroplate liquid regeneration unit 326 than exceedingly increasing the electroplate liquid that surpasses preset range or additive or surfactant such as the composition of the additive of organic principle or surfactant as the electroplate liquid that refuse remains on wherein, and need not replace electroplate liquid, thereby reduced the cost and the workload of replacing significantly with new electroplate liquid.Particularly, use, electroplate liquid is regenerated to identical with new electroplate liquid basically degree with electroplate liquid administrative unit 302.
This electroplating device comprises exhaust-gas treatment unit 328, is used for removing harmful components from gas or fog that electroplating device produces, and harmless gas is arrived the outside of this equipment by discharge of pipes.For example, exhaust-gas treatment unit 328 is handled by the wet process that utilizes absorption liquid, the dry-cure that utilizes absorbent or by the condensation liquefaction of cooling and is removed harmful composition.
Generally speaking, gas that produces in electroplating device or fog are harmful to miscellaneous equipment or facility.The blast pipe of drawing from electroplating device generally connects and joins on the total air escape pipe.Thereby, in electroplating device, also do not have processed waste gas may with the waste gas reaction from miscellaneous equipment, thereby will apply adverse effect to miscellaneous equipment or facility.In the present embodiment, the waste gas of having removed pernicious gas and fog by exhaust-gas treatment unit 328 is introduced in the total air escape pipe, so that prevent miscellaneous equipment or facility is produced adverse effect.Like this, can reduce removing the burden of the harmful components in miscellaneous equipment or the facility.
Under the electroplating technology that utilizes acid electroplating liquid and the situation of utilizing the electroplating technology combination contain the cyanogen electroplate liquid, electroplating bath should preferably have first chamber of preserving acid electroplating liquid and preserve second chamber that contains the cyanogen electroplate liquid, and wherein first chamber and second chamber are spaced apart thing and separate.Wish that first chamber comprises the blast pipe of discharging by the sour gas of acid electroplating liquid generation, and second chamber comprises that discharging is by containing the blast pipe that contains the dicyanogen body that the cyanogen electroplate liquid produces.
For example, if carry out the electroplating technology utilize acid electroplating liquid and utilize the electroplating technology that contains the cyanogen electroplate liquid in the same electrical coating apparatus, thereby then electroplate liquid or gas may mix to produce and contains the dicyanogen body.In order to prevent this defective, these technologies all were to carry out in the electroplating device that separates in the past.In the present embodiment, the sour gas that is produced by acid electroplating liquid and contained the dicyanogen body and can be discharged dividually by what contain that the cyanogen electroplate liquid produces produces so that prevent electroplate liquid or gas from mixing and contains the dicyanogen body.Like this, utilize the electroplating technology of acid electroplating liquid and the electroplating technology that utilization contains the cyanogen electroplate liquid in the same electrical coating apparatus, to carry out continuously.Contain the cyanogen electroplate liquid and can comprise gold plating bath or plating solution for silver-plating.
This electroplating device comprises waste water reclamation unit 330, be used for waste water used at electroplating technology and that therefrom emit is regenerated, thereby a part or all regenerative wastewater are used further to electroplating technology, simultaneously with the outside of all the other discharge of wastewater to this equipment.
Cleaning in the electroplating technology needs a large amount of clean water.Have a large amount of clean water of high cleanliness and in electroplating technology the processing of used waste water existing facility is caused big burden.In the present embodiment, electroplating device has wholly or in part the system of sealing, and this system is used for used waste water is wherein regenerated.Like this, can reduce the consumption of clean water and to the burden of the required waste water treatment of this facility with high cleanliness.The waste water reclamation unit can be constituted by at least a in miniature filtration, ultra-violet radiation, ion-exchange, ultrafiltration and the reverse osmosis waste water is regenerated.
This electroplating device comprises chemical liquids regulon 332, is used for removing the metal impurities that are blended in electroplate liquid or the catabolite of organic impurities or generation.This chemical liquids regulon 332 comprises electrolytic treatments parts, ion-exchange parts, activated carbon treatment parts and condenses and precipitate at least a in the parts.
In order to keep the assessed for performance of deposited film, the electroplate liquid that uses in electroplating technology should be updated periodically according to the level of the catabolite that is blended in impurity level in the electroplate liquid or accumulation.Old electroplate liquid goes out of use, and except special electroplate liquid such as gold plating bath, has increased the burden of cost and environment thus.In the present embodiment, can remove impurity and the catabolite that is included in the old electroplate liquid, so that prolong the renewal frequency of electroplate liquid by chemical liquids regulon 332.Like this, can reduce burden to cost and environment.
Use the protruding electroplating technology of this electroplating device below with reference to Fig. 6 and 7 explanations.At first, layer is presented in 500 conducts of deposit inculating crystal layer on the substrate surface shown in Figure 1A.Then, on the whole surface of inculating crystal layer 500, apply resist 502, so that make it have for example height H of 20 to 120 μ m.Afterwards, form the opening 502a of the diameter D of about 20 to 200 μ m on the precalculated position in resist 502.Substrate with this opening 502a is contained in the cassette of substrates 10 towards last state with the surface of the substrate that will electroplate.Cassette of substrates 10 is loaded on the box platform 12.
Take out a substrate the cassette of substrates 10 of substrate-transferring 22 from box platform 12 and place it on the aligner 14, so that aim at the orientation plane or the recess of substrate at predetermined direction.The substrate of being aimed at by aligner 14 is transferred to incineration unit 300, so that provide hydrophily by ashing treatment to the resist on the substrate surface 502.Then, by substrate-transferring 22 substrate-transfer after the ashing treatment is arrived substrate load/unload unit 20.
Being stored in two substrate holder 18 in the accumulator 24 is raise by the conveyer 42 of substrate holder conveyer 40 and transfers to substrate load/unload unit 20.Substrate holder 18 is revolved above substrate holder conveyer 40 and is turn 90 degrees, so that flatly locate.Thereby substrate holder 18 descends two substrate holder 18 is placed on the loading plate 52 in the substrate load/unload unit 20 simultaneously then.At this moment, encourage hydraulic cylinder, thereby open near the moveable support member 58 of the substrate holder 18 the core that is arranged on substrate load/unload unit 20.
Substrate-transferring 22 is with substrate-transfer and be inserted in the substrate holder 18.Then, according to reverse manner excitation hydraulic cylinder, thereby close moveable support member 58.Afterwards, by locking/unlocking mechanism locking moveable support member 58.After substrate being loaded in the substrate holder 18, loading plate 52 and flatly slide, so that another substrate holder 18 is arranged on the center of substrate load/unload unit 20.According to mode same as described above another substrate is loaded in another substrate holder 18, will loads plate 52 then and turn back to the home position.
In substrate holder 18, the substrate surface that electroplate comes out by the opening of substrate holder 18.In its peripheral part seal substrate, enter the peripheral part of substrate by the sealing gasket (not shown) so that prevent electroplate liquid.Substrate not with part that electroplate liquid contacts on be electrically connected to a plurality of electrically contact on.The handle 76 of substrate holder 18 is electrically connected on these electrically contact.Handle 76 is connected to power supply, so that carry electrical power to the inculating crystal layer 500 of substrate.
Then, keep simultaneously by the conveyer 42 of substrate holder conveyer 40 and two substrate holder 18 of the substrate that respectively has loading of raising.Substrate holder 18 transferred to accumulator 24 and revolve above accumulator 24 turn 90 degrees, so that perpendicular positioning.Then, substrate holder 18 descends, thereby substrate holder 18 is fixed in the accumulator 24 according to hang and temporarily is received in the accumulator 24 thus.The conveyer 42 of substrate-transferring 22, substrate load/unload unit 20 and substrate holder conveyer 40 repeats above-mentioned processing, so that substrate is loaded in the substrate holder 18 that is stored in the accumulator 24 and according to fixing on the precalculated position of hang in accumulator 24 (the interim reception) substrate holder 18.
The conveyer 44 of substrate holder conveyer 40 is preserved two substrate holder 18 that temporarily are received in the accumulator 24.These two substrate holder 18 are transmitted device 44 risings and transfer to pre-wetting groove 26.Then, two substrate holder 18 descend and also are immersed in the pure water that is kept in the pre-wetting groove 26, thereby with the surface of the wetting substrate of pure water, are used for providing hydrophily to substrate surface.Any liquid all can be used as the pre-wetting liquid in the pre-wetting groove 26, as long as its can wetting substrate surface and can replace air bubble in the opening of inculating crystal layer so that improve the hydrophily of substrate surface with liquid.As mentioned above, this electroplating device can have various pre-wetted portions, so that carry out two or more pre-wettability treatment continuously in pre-wetted portions.In this case, this electroplating device can be realized various types of processing.
If contact with electrically contacting deficiently to substrate by the sensor that is arranged in the substrate holder 18, then have the substrate holder 18 that is loaded in substrate wherein and temporarily be received in the accumulator 24.Like this, when substrate being loaded in the substrate holder 18,, also can carrying out electroplating technology continuously and need not interrupt the operation of electroplating device even substrate does not keep in touch with electrically contacting fully.Although do not electroplate with electrically contacting the substrate that keeps in touch fully, can after returning cassette of substrates, from cassette of substrates, remove the substrate that does not have plating to having.
Then, the substrate holder 18 with substrate is transferred to presoaking tank 28 according to mode same as described above.Substrate is immersed in the treatment fluid such as sulfuric acid or hydrochloric acid solution that is kept in the presoaking tank 28, has high-resistance oxidation film, so that expose clean metal surface as pretreating process thereby etching is formed on the lip-deep of inculating crystal layer 500.Pretreated substrate-transfer like this is arrived plating area measurement unit 320, so that measure the real area that will form plated film 504.This measurement for example carries electric current to carry out by the inculating crystal layer 500 to substrate.Then, the substrate holder 18 that will have substrate is transferred to rinse bath 30a, there with the surface that is kept at the pure water cleaning substrate among the rinse bath 30a.
The substrate holder 18 that will have a substrate that was cleaned is sent to the electroplating bath 34 of preserving electroplate liquid and is fixed in each electroplating unit 38 according to hang.The conveyer 44 of substrate holder conveyer 40 repeats above-mentioned processing, is sent to the electroplating unit 38 in the electroplating bath 34 and substrate holder 18 is fixed on the precalculated position according to hang so that will have the substrate holder 18 of substrate.After all substrate holder 18 having been fixed according to hang, apply electroplating voltage between the inculating crystal layer 500 of anode 200 and substrate, electroplate liquid spills into and overflows in the groove 36 simultaneously.Simultaneously, make the blade 202 in the electroplating unit 38 be parallel to the substrate surface reciprocating motion by blade driving unit 46.Like this, the surface of substrate is electroplated.At this moment, substrate holder 18 is supported on the top of electroplating unit 38 with handle 76 according to hang.From electroplating power supply by handle support section, handle 76 with electrically contact to the inculating crystal layer 500 of substrate and carry electrical power.
After finishing electroplating technology, stop the reciprocating motion that applies electroplating voltage, carries electroplate liquid and blade from electroplating power supply.Rinse bath 30b is fixed and transferred to two substrate holder 18 with substrate of being electroplated by the conveyer 44 of substrate holder conveyer 40 simultaneously.Substrate holder 18 is immersed in the pure water that is kept among the rinse bath 30b, so that clean substrate surface with pure water.The substrate holder 18 that will have a substrate is transferred to neutralisation unit (neutralization chamber) 314 and is immersed in the neutralisation treatment liquid, thereby carries out neutralisation treatment.After neutralisation treatment, clean substrate and substrate holder 18 with pure water.Then, the substrate holder 18 that will have substrate is sent to bellows 32, thereby removes attached to the water droplet on substrate holder 18 and the substrate by blowing air, so that dry substrate holder 18 and substrate.The substrate holder 18 that will have a substrate that is dried turns back to accumulator 24 and is fixed on the precalculated position according to hang.
The conveyer 44 of substrate holder conveyer 40 repeats above-mentioned processing, turns back to accumulator 24 and according to hang substrate holder 18 is fixed on the precalculated position so that will have the substrate holder 18 of the substrate of electroplating.
Two substrate holder 18 that conveyer 42 by substrate holder conveyer 40 will turn back to the substrate that having of accumulator 24 electroplated keep simultaneously and are placed on the loading plate 52 of substrate load/unload unit 20.At this moment, owing to be fixed on substrate in the substrate holder 18 and do not have fully and electrically contact the substrate holder 18 that keeps in touch and be received in the accumulator 24 and be transmitted and be placed on the loading plate 52 of substrate load/unload unit 20 temporarily by being arranged on sensor in the substrate holder 18.
Then, open the moveable support member 58 of the substrate holder 18 on the core that is arranged on substrate load/unload unit 20 by locking/unlocking mechanism.The excitation hydraulic cylinder is so that open moveable support member 58.In this state, by substrate-transferring 22 the plating substrate in the substrate holder 18 is removed and is sent to cleaning and drying device 16.Clean and drying device 16 in, clean substrate and with high speed rotating, thus the drying substrate.Then, load plate 52 horizontal slips.Utilize mode same as described above to clean and the dry substrate of fixing by another substrate holder 18.
Loading after plate 52 turns back to the home position, two substrate holder 18 that unload substrate from it are fixing and turn back to precalculated position in the accumulator 24 by the conveyer 42 of substrate holder conveyer 40 simultaneously.Then, it is fixing simultaneously and be placed on the loading plate 52 of substrate load/unload unit 20 that the conveyer 42 by substrate holder conveyer 40 will turn back to two substrate holder 18 that having of accumulator 24 electroplate substrate.Like this, repeat above-mentioned processing.Electroplate the substrate holder 18 of substrate and unload all substrates and clean and dry from turning back to having of accumulator 24.Like this, shown in Figure 1B, can obtain to have the substrate W of plated film 504, described plated film 504 is grown among the opening 502a that is formed in the resist 502.
Next, the substrate that cleans and drying is crossed is sent to visual detection unit 316, so that detect the outward appearance that is formed on the plated film 504 on the substrate surface.The substrate that detected is sent to resist peels off unit 306, there substrate is immersed in temperature and for example is in 50 to 60 ℃ the solvent, thereby peel off and remove resist 502 on the substrate, shown in Fig. 1 C such as acetone.Then, clean and the dry substrate of having removed resist 502.
The substrate-transfer of cleaning is arrived film thickness measuring unit 318, thereby measure the film thickness distribution of plated film 504.The substrate of measuring is sent to inculating crystal layer removes unit 308, after electroplating technology, remove the unwanted part of the inculating crystal layer 500 that exposes there.Then, clean and the dry substrate of the unwanted part of inculating crystal layer 500 of having removed.
Substrate is sent to comprises for example reflux unit 312 of diffusion furnace, so that plated film 504 is refluxed, thereby form projection 506, these projectioies are owing to the surface tension shown in Fig. 1 E forms circle.Perhaps, substrate can be sent to annealing unit 310, so that under 100 ℃ or higher temperature, substrate is annealed, so that remove residual stress in the projection 506.Then, clean and dry backflow or annealed substrate.
The substrate that cleaned is sent to polishing unit 322,, thereby regulates the thickness of substrate so that (or plated film 504) polished on the surface of projection 506.Clean and the dry substrate that polished.Then, substrate is returned or is discharged in the cassette of substrates 10.Therefore, finished series of process.
In the present embodiment, substrate-transferring 22 has dried handle and wet handle.Wet handle is only using when substrate holder 18 is taken out the plating substrate.Except the time, use dried handle from substrate holder 18 taking-up plating substrates.Because thereby the rear surface of the rear surface substrate of substrate holder 18 seal substrate contact with electroplate liquid, so needn't use the handle that wets to handle substrate.Yet because dried handle and wet handle separately use, even therefore because the mobile or inadequate sealing of flushing water makes electroplate liquid pollute substrate, this pollution can not make the rear surface of another substrate contaminated yet.
The projection that is formed by multilayer plating comprises Ni-Cu-scolder, Cu-Au-scolder, Cu-Ni scolder, Cu-Ni-Au, Cu-Sn, Cu-Pd, Cu-Ni-Pd-Au, Cu-Ni-Pd, Ni-scolder, Ni-Au etc.Scolder can comprise high melting point solder or congruent melting scolder.Perhaps, thus projection can form and it is refluxed and makes multilayer form alloy by Sn-Ag multilayer plating or Sn-Ag-Cu multilayer plating.Because this technology is not used Pb, and is different with conventional Sn-Pb scolder, therefore can eliminate the environmental problem that causes by lead.
As mentioned above, when operating this equipment after the cassette of substrates with accommodating substrates is loaded on the box platform, the electroplating device of present embodiment can automatically carry out the immersion-type electroplating technology and forming the electroplating metal film that is suitable for projection on substrate surface on the substrate.
In the present embodiment, by substrate holder according to sealing means with peripheral part and rear surface stationary substrate in, substrate transmitted with substrate holder be used for each processing.Yet substrate can be received and transmit in have the substrate-transferring of rack rails.In this case, thermal oxide layer (Si oxide skin(coating)), adhesive tape film etc. can be applied on the rear surface of substrate, so that prevent that the rear surface of substrate from being electroplated.
In the present embodiment, the immersion-type electroplating technology can automatically carry out, so that form projection on substrate.Yet wherein upwards the ejection-type of jet electro-plating liquid or cup type electroplating technology can automatically carry out, so that form projection on substrate.Also be such in following examples.
Fig. 8 is the schematic plan view that shows according to the electroplating device of second embodiment of the invention.As shown in Figure 8, this electroplating device has: be used for loading and unloading and wherein hold load/unload parts 402 such as the box 400 of the substrate of semiconductor wafer; The instrument accumulator 404 of the corresponding polytype instrument of the size of the substrate that is used to store and will electroplates (substrate holder); Be used for conveyer 406 that substrate is transmitted with the instrument of stationary substrate; And electroplating part 408.
Load/unload parts 402 have the transducer 410 of the box fixed part office of mounting box 400 disposed thereon.Transducer 410 detects the size of the substrate in the box 400 that is received on the box standing part.In addition, load/unload parts 402 have near the substrate load/unload unit 412 that is arranged on the instrument accumulator 404, are used for being loaded into substrate on the instrument and from instrument unloading substrate.By transmitting the automaton (not shown) substrate is sent to substrate load/unload unit 412 from box 400.
Electroplating part 408 comprises polytype electroplating bath, in order to carry out various electroplating processes.In the present embodiment, electroplating bath comprises the copper plating tank 414a that is used to carry out the copper depositing process, is used to the golden electroplating bath 414c that carries out the nickel electroplating bath 414b of nickel depositing process and be used to carry out golden depositing process.Successively substrate is sent to electroplating bath 414a, 414b and 414c by conveyer 406.Like this, various electroplating technology can carry out successively so that form the projection with Cu-Ni-Au multilayer.This electroplating bath is not limited to above-mentioned electroplating bath.
In the present embodiment, electroplating part 408 has single electroplating power supply 416.Power supply 416 is optionally carried electrical power by the switch between the anode of substrate and electroplating bath 418, and wherein substrate is immersed in the described electroplating bath, thereby this substrate is in turn electroplated in copper plating tank 414a, nickel electroplating bath 414b and golden electroplating bath 414c.This electroplating device can comprise the transducer (not shown), is used for detecting the time that substrate is immersed in the electroplate liquid of described a plurality of electroplating baths.In this case, switch 418 is according to the signal Switching power 416 from transducer.
Like this, use single electroplating power supply 408 can reduce the quantity of electroplating power supply.Correspondingly, can make this electroplating device very compact dimensionally.In addition, when in electroplating power supply, breaking down, can before substrate is electroplated or when substrate is electroplated, interrupt electroplating technology.Thereby, needn't abandon this substrate, and this substrate can be electroplated by the electroplating power supply that has keeped in repair.
The following describes the electroplating technology that in this electroplating device, carries out.At first, deposit inculating crystal layer 500 on the surface of substrate is shown in Figure 1A.Then, resist 502 is applied on the whole surface of inculating crystal layer 500.Afterwards, form opening 502a on the precalculated position in resist 502.The substrate that will have this opening 502a is installed in the box 400.Be incorporated into box 400 in the load/unload parts 402 and be loaded on the box standing part of load/unload parts 402.At this moment, transducer 410 detections that are arranged on the box standing part are contained in the size of the substrate in the box 400 and signal are sent to the controller (not shown).
Controller sends to conveyer 406 with signal, the instrument that these conveyer 406 selections have the size that is suitable for being contained in the substrate in the box 400 that is introduced in the load/unload parts 402, take out this instrument from instrument accumulator 404, and this instrument is sent to substrate load/unload unit 412.Take out substrate and send it to substrate load/unload unit 412 from box 400 by transmitting the automaton (not shown).By this instrument this substrate is fixed in the substrate load/unload unit 412.
If this electroplating device is designed to the size of the substrate that correspondence will electroplate, then need the substrate of corresponding each sizes of a plurality of electroplating devices.Thereby, in the purge chamber, need to be used to install and such as the large space of the instrument of power supply.According to present embodiment, single electroplating device can be in the enterprising electroplating technology of the substrate with different size, thereby can reduce required space, institute's energy requirement and required cost in the expensive purge chamber, can electroplate the substrate with different size simultaneously.
Fig. 9 is the schematic plan view that shows according to the electroplating device of third embodiment of the invention.As shown in Figure 9, this electroplating device has: one or more box platforms 610, each box platform are used for loading and unloading and hold cassette of substrates such as the substrate of semiconductor wafer; Two cleaning units 612; Two pretreatment units 614; Two electroplating units 616; Two resists are peeled off unit 618; Two etching unit 620; And two reflux units 622.In the example shown, this electroplating device has three box platforms 610.It is independently each other that cleaning unit 612, pretreatment unit 614, electroplating unit 616, resist are peeled off unit 618, etching unit 620 and reflux unit 622.As shown in Figure 9, these unit are intactly combination each other, thereby forms two lines that respectively comprise dissimilar unit.
This electroplating device also has; Be arranged on first between box platform 610 and the cleaning unit 612 and transmit automaton 624, be used between box platform 610 and cleaning unit 612, transmitting substrate; And be arranged on the transmission of second between these two unit wires automaton 626, be used between these unit, transmitting substrate.Second transmits automaton 626 can move along unit wires.
For example, cleaning unit 612 can be immersed in substrate in the pure water, so that substrate surface is contacted with pure water, thereby cleans (or rinsing) substrate, dries substrate then.For example, pretreatment unit 614 can be constituted substrate is immersed in the treatment fluid such as sulfuric acid or hydrochloric acid solution,, thereby expose clean metal surface so that etching is formed on the high-resistance oxidation film that has on the substrate surface.Perhaps, pretreatment unit 614 can be applied to the pretreatment fluid (pre-preg solution) that constitutes an electroplate liquid part on the surface of substrate equably, thereby electroplate liquid is more hopefully attached on the substrate surface.
For example, the enterprising electroplating technology of opening that electroplating power supply 616 can be in being formed on substrate surface.For example, resist can be peeled off unit 618 constitutes and peels off and remove the resist film of staying on the substrate surface.For example, but etching unit 620 etchings and remove the unwanted part of inculating crystal layer, and it is formed in the inculating crystal layer beyond the projection on the substrate surface.For example, reflux unit 622 can be constituted heating and backflow substrate, thereby melt plated film and on substrate surface, form hemispherical projections.
Below the electroplating technology that carries out will be described in this electroplating device.At first, layer is presented in deposit inculating crystal layer 500 conducts on substrate surface by sputter or vapor deposition, shown in Figure 1A.Then, resist 502 is applied on the whole surface of inculating crystal layer 500, so that have for example height H of 20 to 120 μ m.Afterwards, the opening 502a of the diameter D of formation about 20 to about 200 μ m on the precalculated position in resist 502.The substrate that will have this opening 502a is contained in the cassette of substrates.This cassette of substrates is loaded on the box platform 610.
First transmits the cassette of substrates of automaton 624 from box platform 610 takes out a substrate and sends it to the cleaning unit 612 one, so that clean the surface of substrate with pure water.Transmit substrate that automaton 626 will clean by second and be sent in the pretreatment unit 614 one, thereby on substrate, carry out pretreating process.In pretreatment unit 614, substrate is immersed in the treatment fluid such as sulfuric acid or hydrochloric acid solution, the pretreatment fluid (pre-preg type solution) that perhaps will constitute a part of electroplate liquid is applied on the substrate surface equably.
As required, clean pretreated substrate with one of cleaning unit 612.Then, transmit automaton 626 by second this substrate is sent in the electroplating unit 616 one, thereby on substrate surface, carry out electroplating technology.Like this, shown in Figure 1B, can obtain to have the substrate W that is grown in the plated film 504 among the opening 502a that is formed in the resist 502.
As required, clean plating substrate W with one of cleaning unit 612.Then, transmit automaton 626 by second and substrate is sent to resist peels off in the unit 618 one, for example be in 50 to 60 ℃ the solvent thereby substrate is immersed in temperature, thereby peel off and remove resist 502, shown in Fig. 1 C such as acetone.
As required the substrate of having removed resist 502 is cleaned.Then, transmit automaton 626 by second substrate is sent in the etching unit 620 one, thus the etching and the unwanted part of removing the inculating crystal layer 500 that after electroplating technology, exposes, shown in Fig. 1 D.
As required, utilize one of cleaning unit 612 to clean the substrate of etched mistake.Then, transmit automaton 626 by second this substrate is sent in the reflux unit 622 one, thus the plated film 504 of heating and backflow substrate, so that form because surface tension and rounded projection, shown in Fig. 1 E.In addition, under 100 ℃ or higher temperature, substrate is annealed, so that remove residual stress in the projection 506.
Transmit substrate that automaton 626 will reflux by second and be sent in the cleaning unit 612 one.In cleaning unit 612, clean substrate and drying with pure water.Turn back to the cassette of substrates that is installed on the box platform 610 by first substrate that will transmit after automaton 624 will dry.
As mentioned above, according to present embodiment, can comprise the technology that convexes to form of electroplating technology continuously, so that reduced the space that is used for this equipment.Because electroplating device comprises the separate unit that is used to carry out various processing, so this electroplating device can be realized desirable electroplating technology neatly.
Although at length shown and some preferred embodiment of the present invention has been described, it should be understood that under the situation of the scope that does not break away from claims and can carry out various changes and modification.
Industrial applicibility
The present invention is suitable for use in the electroplating device, and this electroplating device is used for utilizing the resist conduct Mask forms projection (outstanding electrode) on the surface of semiconductor wafer, described projection provide with The electrode of encapsulation or the electrical connection of semiconductor chip.
Claims (53)
1, a kind of electroplating device comprises:
Incineration unit constitutes it on the lip-deep resist that puts on the inculating crystal layer that is formed on the substrate and to carry out ashing treatment;
Pre-wetted part constitutes it that surface for described substrate provides hydrophily after described ashing treatment;
The pre-soaking parts constitute it described surface of described substrate are contacted with treatment fluid, thereby clean or activate the surface that is formed on the described inculating crystal layer on the described substrate; And
Electroplating unit constitutes the described surface that makes described substrate with it and is immersed in the electroplate liquid in the electroplating bath, uses resist as mask simultaneously, so that form plated film on the described surface that is formed on the described inculating crystal layer on the described substrate.
2, electroplating device according to claim 1 wherein constitutes described incineration unit described resist is applied at least a in plasma, light and the electromagnetic wave, thereby carry out described ashing treatment on described resist.
3, electroplating device according to claim 1, wherein said pre-wetted part comprise be constituted as with substrate be immersed in the pure water pre-wetting groove and be constituted as by at least one in the pre-wetting device of the jet surface pure water of described substrate of injector.
4, electroplating device according to claim 3, wherein said pre-wetted part is under the pressure below atmospheric pressure.
5, electroplating device according to claim 3, wherein said pre-wetted part is under the vacuum.
6, electroplating device according to claim 3, wherein said pre-wetted part comprises the degasification device that is used for removing from described pure water air.
7, electroplating device according to claim 1, wherein said pre-wetted part comprise a plurality of pre-wetted portions with difference in functionality.
8, electroplating device according to claim 1, wherein said pre-soaking parts comprise the presoaking tank of preserving described treatment fluid, and this treatment fluid comprises at least a in the reductive water of Ozone Water, acid solution, alkaline solution, acid degreaser, the solution that contains developer, the solution that contains anticorrosive additive stripping liquid controlling and electrolyte.
9, electroplating device according to claim 1, wherein said pre-soaking parts comprise the presoaking tank of preserving described treatment fluid, this treatment fluid comprises acid solution or acid degreaser, so that described substrate is being carried out electrolytic treatments as under the state of negative electrode on described substrate in described treatment fluid.
10, electroplating device according to claim 1, wherein said electroplating unit comprises:
Be arranged on the anode in the described electroplate liquid; And
Can be used to measure the anode weight measurement device of the weight of described anode.
11, electroplating device according to claim 10, wherein said anode weight measurement device comprises load unit.
12, electroplating device according to claim 1, wherein said electroplating bath comprises:
Be arranged on the anode in the described electroplate liquid;
Be arranged on the virtual anodes in the described electroplating bath; And
Single power supply constitutes it optionally and to apply voltage and to apply voltage to the described virtual anodes that is used for virtual electroplating technology to the described anode that is used for the actual electrical depositing process.
13, electroplating device according to claim 12 wherein constitutes applying of switched voltage automatically with described single power supply, so that carry out described actual electrical depositing process after finishing described virtual electroplating technology.
14, electroplating device according to claim 1 also comprises the electroplate liquid administrative unit, and it is constituted the composition that management flows to the described electroplate liquid of described electroplating unit.
15, electroplating device according to claim 14 wherein constitutes described electroplate liquid administrative unit the composition of analyzing and/or assess described electroplate liquid and also adds not enough composition by FEEDBACK CONTROL and/or feedfoward control in described electroplate liquid.
16, electroplating device according to claim 1 also comprises communication device, it is constituted by computed communication network carry out information communication.
17, electroplating device according to claim 1 comprises that also resist peels off the unit, constitutes it from the described sur-face peeling that is formed on the described inculating crystal layer on the described substrate and removes described resist as mask.
18, electroplating device according to claim 1 comprises that also inculating crystal layer removes the unit, and it is constituted the unwanted part of removing the inculating crystal layer that is formed on the described substrate.
19, electroplating device according to claim 1 also comprises annealing unit, it is constituted the described plated film that forms on the described surface of described substrate is annealed.
20, electroplating device according to claim 1 also comprises reflux unit, and its described lip-deep described plated film that constitutes being formed on described substrate is refluxed.
21, electroplating device according to claim 1 also comprises neutralisation unit, it is constituted on the described surface of described substrate carry out neutralisation treatment.
22, electroplating device according to claim 1 also comprises visual detection unit, and it is constituted the outward appearance that detects the described lip-deep described plated film that is formed on described substrate.
23, electroplating device according to claim 22 wherein constitutes described visual detection unit the outward appearance that detects described plated film with contact or noncontact mode.
24, electroplating device according to claim 1 also comprises the film thickness measuring unit, and it is constituted the thickness of measuring the described lip-deep described plated film that is formed on described substrate.
25, electroplating device according to claim 24 wherein constitutes described film thickness measuring unit the thickness with contact or the described plated film of non-contact mode measuring.
26, electroplating device according to claim 1 also comprises and electroplates the area measurement unit, and it is constituted measurement will form described plated film on the described surface of described substrate real area.
27, electroplating device according to claim 26 wherein constitutes described plating area measurement unit to described substrate transfer electric current, thereby measures described real area.
28, electroplating device according to claim 26 wherein constitutes the described surface of scanning described substrate optically with described plating area measurement unit, thereby measures described real area.
29, electroplating device according to claim 1 also comprises the polishing unit, thereby it is constituted the thickness of regulating described plated film is polished on the surface of described plated film.
30, electroplating device according to claim 29 wherein constitutes described polishing unit and carries out chemico-mechanical polishing or mechanical polishing, thereby the described surface of described plated film is polished.
31, electroplating device according to claim 1 also comprises the chemical liquids regulon, it is constituted remove the metal impurities that are blended in the described electroplate liquid or the catabolite of organic impurities or generation.
32, electroplating device according to claim 31, wherein said chemical liquids regulon comprise electrolytic treatments parts, ion-exchange parts, activated carbon treatment parts and condense and precipitate at least a in the parts.
33, electroplating device according to claim 1 also comprises the chemical liquids supply and reclaims the unit, it is constituted to described electroplating bath supplying chemical liquid with from described electroplating bath reclaim described chemical liquids.
34, electroplating device according to claim 33, wherein said chemical liquids supply and recovery unit comprise that according to the fixing chemical liquids container of replaceable mode described chemical liquids supply and recovery unit are supplied described chemical liquids and reclaimed described chemical liquids from described electroplating bath to described chemical liquids container to described electroplating bath from described chemical liquids container.
35, electroplating device according to claim 1 also comprises the electroplate liquid regeneration unit, it is constituted remove the organic substance that is included in the described electroplate liquid, thereby regenerate described electroplate liquid.
36, electroplating device according to claim 35 wherein constitutes described electroplate liquid regeneration unit by charcoal filter and removes organic substance.
37, electroplating device according to claim 1 also comprises the exhaust-gas treatment unit, with its constitute from the gas that described electroplating device, produces or fog, remove harmful components and with innocuous gas by the outside of discharge of pipes to described electroplating device.
38,, wherein described exhaust-gas treatment unit is constituted to handle and remove harmful components by the wet process that utilize to absorb liquid, the dry-cure that utilizes absorbent or by the condensation liquefaction of cooling according to the described electroplating device of claim 37.
39, according to the described electroplating device of claim 37, the spacer that wherein said electroplating bath has first chamber that keeps acid electroplating liquid, preserve second chamber that contains the cyanogen electroplate liquid and described first chamber and described second chamber are separated,
Wherein said first chamber comprises the waste gas exhaust pipe that is used for discharging the sour gas that the acid electroplating liquid by described first chamber produces,
Wherein said second chamber comprises the waste gas exhaust pipe that contains the dicyanogen body that the cyanogen electroplate liquid produces that contains that is used for discharging by described second chamber.
40, according to the described electroplating device of claim 39, the wherein said cyanogen electroplate liquid that contains comprises gold plating bath or plating solution for silver-plating.
41, electroplating device according to claim 1, also comprise the waste water reclamation unit, the waste water that it is constituted that regeneration has been used and emit from described electroplating unit in electroplating unit, so that the described regenerative wastewater of at least a portion is used further to described electroplating unit, simultaneously with the outside of remaining discharge of wastewater to described electroplating device.
42,, wherein described waste water reclamation unit is constituted by at least a in miniature filtration, ultra-violet radiation, ion-exchange, ultrafiltration and the reverse osmosis waste water is regenerated according to the described electroplating device of claim 41.
43, a kind of electro-plating method comprises:
On the surface that is formed on the inculating crystal layer on the substrate, apply resist;
This resist is carried out ashing;
After described ashing treatment,, handle thereby on the described surface of described substrate, carry out hydrophily for the surface of described substrate provides hydrophily;
After described hydrophily is handled, clean or activate the described surface of described substrate; And
The described surface of described substrate is immersed in the electroplate liquid, uses described resist simultaneously,, thereby on the described surface of described substrate, form plated film so that carry out electroplating technology as mask.
44, according to the described electro-plating method of claim 43, wherein said hydrophily is handled and is comprised the hydrophily processing of carrying out two or more continuously.
45,, also be included in after the described electroplating technology, from the described sur-face peeling of described inculating crystal layer with remove described resist according to the described electro-plating method of claim 43.
46,, also comprise the unwanted part of removing the described lip-deep described inculating crystal layer that is formed on described substrate according to the described electro-plating method of claim 43.
47,, also comprise the described lip-deep described plated film that is formed on described substrate is annealed according to the described electro-plating method of claim 43.
48,, comprise that also the described lip-deep described plated film to being formed on described substrate refluxes according to the described electro-plating method of claim 43.
49, according to the described electro-plating method of claim 43, also be included in after the described electroplating technology, on the described surface of described substrate, carry out neutralisation treatment.
50,, also comprise the outward appearance that detects the described lip-deep described plated film that is formed on described substrate according to the described electro-plating method of claim 43.
51,, also comprise the thickness of measuring the described lip-deep described plated film that is formed on described substrate according to the described electro-plating method of claim 43.
52,, comprise that also measurement will form the real area of described plated film on the described surface of described substrate according to the described electro-plating method of claim 43.
53,, comprise that also the described lip-deep described plated film to being formed on described substrate polishes, thereby regulate the thickness of described plated film according to the described electro-plating method of claim 43.
Applications Claiming Priority (3)
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| JP148811/2003 | 2003-05-27 | ||
| JP2003148811A JP2004353004A (en) | 2003-05-27 | 2003-05-27 | Plating device |
| JP051849/2004 | 2004-02-26 |
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| CN 200910004366 Division CN101504911A (en) | 2003-05-27 | 2004-05-25 | Plating apparatus and plating method |
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| CN100477098C true CN100477098C (en) | 2009-04-08 |
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| CN 200910004366 Pending CN101504911A (en) | 2003-05-27 | 2004-05-25 | Plating apparatus and plating method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103374743A (en) * | 2012-04-26 | 2013-10-30 | 富葵精密组件(深圳)有限公司 | Electroplating system and waste water treatment method |
| CN103491715A (en) * | 2012-06-13 | 2014-01-01 | 健鼎（无锡）电子有限公司 | Circuit-board developing, electroplating and etching device |
| CN107429418A (en) * | 2014-11-12 | 2017-12-01 | 安托士设备系统公司 | The hydrophilic modifying on the photoresist surface carried out simultaneously and metal surface prepare：Methods, systems and products |
| CN108691000A (en) * | 2017-03-31 | 2018-10-23 | 株式会社荏原制作所 | Coating method and plater |
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2003
- 2003-05-27 JP JP2003148811A patent/JP2004353004A/en active Pending
-
2004
- 2004-05-25 CN CN 200480010700 patent/CN100477098C/en active Active
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103374743A (en) * | 2012-04-26 | 2013-10-30 | 富葵精密组件(深圳)有限公司 | Electroplating system and waste water treatment method |
| CN103491715A (en) * | 2012-06-13 | 2014-01-01 | 健鼎（无锡）电子有限公司 | Circuit-board developing, electroplating and etching device |
| CN103491715B (en) * | 2012-06-13 | 2016-04-06 | 健鼎（无锡）电子有限公司 | Circuit board development plating etching machines |
| CN107429418A (en) * | 2014-11-12 | 2017-12-01 | 安托士设备系统公司 | The hydrophilic modifying on the photoresist surface carried out simultaneously and metal surface prepare：Methods, systems and products |
| CN108691000A (en) * | 2017-03-31 | 2018-10-23 | 株式会社荏原制作所 | Coating method and plater |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1788337A (en) | 2006-06-14 |
| JP2004353004A (en) | 2004-12-16 |
| CN101504911A (en) | 2009-08-12 |
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