CN100485641C - 编程和读取更新数据的非易失性存储器系统和方法 - Google Patents

编程和读取更新数据的非易失性存储器系统和方法 Download PDF

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CN100485641C
CN100485641C CNB2006101423583A CN200610142358A CN100485641C CN 100485641 C CN100485641 C CN 100485641C CN B2006101423583 A CNB2006101423583 A CN B2006101423583A CN 200610142358 A CN200610142358 A CN 200610142358A CN 100485641 C CN100485641 C CN 100485641C
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凯文·M·康利
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/102External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/102External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10Providing a specific technical effect
    • G06F2212/1016Performance improvement
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10Providing a specific technical effect
    • G06F2212/1032Reliability improvement, data loss prevention, degraded operation etc
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7202Allocation control and policies
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7208Multiple device management, e.g. distributing data over multiple flash devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7209Validity control, e.g. using flags, time stamps or sequence numbers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2216/00Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/16Flash programming of all the cells in an array, sector or block simultaneously

Abstract

通过在同一或另一分块的未用分页中对新数据进行编程,更新非易失性存储分块的部分分页中的数据。为了防止必须将未变数据分页拷贝到新分块中,或者将标志编程到替换数据分页中,用与新数据所替换的数据分页相同的逻辑地址标识新数据分页,并且添加时间戳来表示写入每个分页的时间。当读取数据时,使用最新数据分页,并且忽略较旧替换数据分页。该技术还应用于包括来自若干不同存储阵列单元的各自一个分块的元分块,其中,将所有分页更新引导到其中一个单元内的单个未用分块。

Description

编程和读取更新数据的非易失性存储器系统和方法
本发明专利申请为2002年1月7日提出的发明名称为“非易失性存储器中的部分分块数据编程和读取操作”、申请号为02803882.7的发明专利申请的分案申请。
技术领域
本发明涉及半导体非易失性数据存储系统架构及其操作方法的领域,并且应用于具有对基于快闪(flash)电可擦除可编程只读存储器(EEPROM)的数据存储系统。
背景技术
快闪EEPROM装置的一般应用是作为电子装置的大容量数据存储子系统。这些子系统通常被实现为可以插入到多个主机系统的可移动式存储卡或者主机系统内的非可移动式嵌入存储器。在这两种实现中,子系统包括一个或多个快闪装置,并且经常还包括一个子系统控制器。
快闪EEPROM装置由一个或多个晶体管分区(cell)阵列组成,其中,每个分区能够非易失性地存储一个或多个数据位。因此,闪存不需要电源来保持在其中编程的数据。然而,一旦编程,在分区可以用新数据值进行重新编程之前,它必须被擦除。这些分区阵列分成多组,以支持高效实现读取、编程和擦除功能。用于大容量存储的典型闪存架构将大的分区组编排为可擦除分块(block),其中,分块包含一次可擦除的最小数目的分区(擦除单元)。
在一种商业形式中,各分块包含足够的分区来存储一个扇区的用户数据以及与用户数据和/或存储它的分块相关的一些开销数据。在一类这种存储系统中,包括在一个扇区中的用户数据量为标准512字节,但是也可以具有某种其它尺寸。由于为了使各个分区分块可单独擦除而需要在集成电路芯片上对这些分块进行相互隔离,因此另一类闪存使分块显著增大,从而减小这种隔离所需的空间。但是由于还希望以小得多的扇区处理用户数据,因此经常还将每个大分块分为可单独寻址的分页,它是用于对用户数据进行读取和编程的基本单元(编程和/或读取单元)。每个分页通常存储一个扇区的用户数据,但是每个分页也可以存储部分扇区或多个扇区。在此所用的“扇区”是指作为单元传输到主机和从主机传输的用户数据量。
大分块系统中的子系统控制器执行多种功能,包括存储子系统从主机接收的逻辑地址(LBA)与存储分区阵列内的物理分块号(PBN)和分页地址之间的转换。该转换经常涉及使用逻辑分块号(LBN)和逻辑分页的中间术语。控制器还通过它经由接口总线发给闪存装置的一系列命令,管理低层快闪电路操作。控制器所执行的另一功能是通过各种手段如通过使用纠错码(ECC)维护存储到子系统的数据的完整性。
在理想情况下,分块的所有分页中的数据经常通过将更新数据写入到未被分配的擦除分块内的分页来一起更新,并且使用新地址更新逻辑-到-物理分块号表。然后,可以擦除原始分块。然而,更典型的是,必须更新给定分块内的部分分页中的数据。存储在给定分块的其余分页中的数据保持不变。在每个分块所存储数据扇区数越高的系统中,这一事件的概率就越高。目前用来完成这种部分分块更新的一种技术是将所要更新的分页数据写入到未用擦除分块内具有对应编号的分页中,然后将未变分页从原始分块拷贝到新分块的分页中。然后,可以擦除原始分块,并且将其加到以后可以对数据进行编程的未用分块库存中。另一种技术类似地将更新分页写入到新分块,但是通过改变原始分块内正被更新的分页的标志来表示它们包含过时数据,而不需要将其它数据分页拷贝到新分块中。然后,当读取数据时,组合从新分块的分页中读取的更新数据与从原始分块内未标为过时的分页中读取的未变数据。
发明内容
根据本发明的一个方面,提供一种在非易失性存储系统中以新数据替代更替数据的方法,所述非易失性存储系统具有以分块组织的非易失性存储元件阵列,所述分块以分页组织,每个分块包括可擦除的最小存储元件组,所述方法包括:将新数据作为更新分页写入所述分块的分页中;以相同的逻辑地址寻址原始分页和更新分页;以及读取和区分所述原始分页和更新分页;其特征在于,所述读取参考写入所述分块的分页的相对时间,读取存储在原始分页和更新分页中的相对时间的指示,使用具有更近时间指示的分页中的数据并且忽略具有更早时间指示的分页中的数据。
根据本发明的另一方面,提供一种非易失性存储系统,包括:以分块组织的非易失性存储元件阵列,所述分块以分页组织,其中分块包括可擦除的最小存储元件组;编程机构,将另一所述分块的原始分页的更新版本写入所述分块的分页中;寻址机构,寻址具有相同逻辑地址的原始分页和更新分页;以及读取机构,区分更新分页和原始分页;其特征在于,所述读取机构参考写入所述分块的分页的相对时间,读取存储在原始分页和更新分页中的相对时间的指示,使用具有更近时间指示的分页中的数据并且忽略具有更早时间指示的分页中的数据。
根据本发明原理的一方面,简短且概括地说,当更新分块内部分分页的数据时,避免将未变数据从原始分块拷贝到新分块以及更新原始分块内的标志的需要。这通过采用共同逻辑地址维护替换数据分页和更新数据分页来完成。然后,数据的原始和更新分页通过对它们进行编程的相对次序来区分。在读取期间,组合存储在具有相同逻辑地址的分页中的最新数据与未变数据分页,而忽略更新分页原始版本中的数据。更新数据可以写入到与原始数据不同的分块内的分页或者可以在同一分块内获得的未用分页。在一个特定实施例中,对各个数据分页存储某种形式的时间戳,从而允许确定具有相同逻辑地址的分页的写入相对次序。在另一个特定实现中,在分块内以特定次序对分页进行编程的系统中,对各个数据分块存储某种形式的时间戳,并且通过分页在分块内的物理位置来确定分块内分页的最新副本。
这些技术既不需要将未变数据从原始分块拷贝到新分块,又不需要改变原始分块内其数据已被更新的分页中的标志或其它数据。由于不需要改变替换分页中的标志或其它数据,因此消除由于这种写入操作而干扰同一分块的相邻分页中的先前写入数据的潜在可能性。另外,避免额外编程操作所带来的性能恶化。
可以结合上述技术使用的另一操作特征记录各个存储分区分块内各个数据分页的逻辑偏移,从而不需要使用与替换数据相同的物理分页偏移来存储更新数据。这就允许更高效使用新分块的分页,并且甚至允许将更新数据存储在与替换数据相同的分块内的任何擦除分页中。
本发明的另一原理方面将位于不同存储阵列单元(也称作“子阵列”)中的两个或更多分块分组在一起,以作为单个操作的一部分一起进行编程和读取。这种多分块组在此称作“元分块(metablock)”。其组成分块可以均位于单存储器集成电路芯片上,或者在使用多个这种芯片的系统中位于两个或更多不同芯片上。当更新这些分块中的一个分块的部分分页的数据时,通常需要使用同一单元中的另一分块。实际上,可以对元分块中的每个分块单独采用上述或其它技术。因此,当更新元分块中的多个分块的分页内的数据时,需要使用多个另外分块内的分页。例如,如果元分块由四个不同存储单元的四个分块形成,则可能将要另外使用最大四个分块来存储原始分块的更新分页,其中每个单元均有一个另外分块。对于原始元分块的每个分块,可能都需要各自单元中的一个更新分块。另外,根据本发明,来自元分块中多个分块的分页的更新数据可以仅存储在其中一个单元内公共分块的分页中。这就大大减少存储更新数据所需的未用擦除分块,从而更高效利用可用来存储数据的存储分区分块。当存储系统频繁更新来自元分块的单个分页时,该技术尤其有用。
本发明的另外方面、特性和优点包括在下面对示例性实施例的描述中,其中,该描述应结合附图一起阅读。
附图说明
图1是具有存储控制逻辑、数据和地址寄存器的典型现有技术快闪EEPROM存储阵列的方框图;
图2示出具有系统控制器的采用多个图1的存储器的架构;
图3是示出图2的存储系统的典型拷贝操作的时序图;
图4示出更新多页分块的部分分页中的数据的现有过程;
图5A和5B分别是图4的原始和新分块的逻辑与物理分块地址对应表;
图6示出更新多页分块的部分分页中的数据的另一现有过程;
图7A和7B分别是图6的原始和新分块的逻辑与物理分页地址对应表;
图8示出更新多页分块的部分分页中的数据的改进过程的一个例子;
图9是图8的新分块的逻辑与物理分页号对应表;
图10提供图8所示的分页内的数据布局的一个例子;
图11示出图8的例子的进一步发展;
图12是图11的新分块的逻辑与物理分页号对应表;
图13示出在图11的分块中读取更新数据的一种方式;
图14是将数据编程到如图8和9所示组织的存储系统中的过程的流程图;
图15示出现有多单元存储器,其中,来自各个单元的分块链接在一起形成元分块;以及
图16示出当更新数据量远远小于元分块的数据存储容量时在图12的多单元存储器中更新元分块数据的改进方法。
具体实施方式
【现有大分块管理技术的描述】
图1示出典型闪存装置内部架构。主要部件包括:输入/输出(I/O)总线411和控制信号412,用来通过接口连接到外部控制器;存储控制电路450,用来通过用于命令、地址和状态信号的寄存器控制内部存储操作。还包括一个或多个快闪EEPROM分区阵列400,其中,每个阵列均具有其自己的行解码器(XDEC)401和列解码器(YDEC)402,一组感测放大器和程序控制电路(SA/PROG)454和数据寄存器404。目前,存储分区通常包括一个或多个导电浮动栅作为存储元件,但是也可以改为使用其它长期电子电荷存储元件。存储分区阵列(memory cell array)可以采用为每个存储元件定义的两个电荷电平工作,从而使用每个元件存储一个数据位。可选地,可以为每个存储元件定义两个以上的存储状态,在这种情况下,在每个元件中存储多个数据位。
如果需要,提供多个阵列400以及相关X解码器、Y解码器、程序/验证电路、数据寄存器等,例如美国专利5,890,192所述,该专利发布于1999年3月30日,并且受让给Sandisk公司,即本申请的受让人,在此将其引作参考。相关存储系统特性在Kevin Conley等人于2000年2月17日提交的共同未决专利申请09/505,555序列号中有描述,在此将其引作参考。
外部接口I/O总线411和控制信号412可以包括如下方面:
CS-芯片选择              用来激活闪存接口
RS-读取选通              用来表示I/O总线正用来从存储阵列传
                         输数据
WS-写入选通              用来表示I/O总线正用来将数据传输到
                         存储阵列
AS-地址选通              表示I/O总线正用来传输地址信息
AD[7:0]-地址/数据总线    该I/O总线用来在控制器与存储控制450
                         的闪存命令、地址和数据寄存器之间传
                         输数据
该接口是仅作为例子给出的,并且可以使用其它信号结构来提供相同的功能。图1仅示出一个具有相关组件的闪存阵列400,但是多个这种阵列可以存在于单个闪存芯片上,这些阵列共用公共接口和存储控制电路,但具有单独的XDEC、YDEC、SA/PROG和DATA REG(数据寄存器)电路,从而允许并行读取和编程操作。
数据凭藉数据寄存器与I/O总线AD[7:0]411的连接,通过数据寄存器404从存储阵列传输到外部控制器。数据寄存器404还连接到感测放大器/编程电路454。连接到各感测放大器/编程电路元件的数据寄存器元件数可以依赖于存储在存储分区的每个存储元件中的位数,其中,快闪EEPROM分区均包含一个或多个浮动栅作为存储元件。如果存储分区在多状态模式下工作,则每个存储元件可以存储多位如2或4。可选地,存储分区可以在二进制模式下工作,从而每个存储元件存储一个数据位。
行解码器401对阵列400的行地址进行解码,从而选择所要访问的物理分页。行解码器401通过内部行地址线419从存储控制逻辑450接收行地址。列解码器402通过内部列地址线429从存储控制逻辑450接收列地址。
图2示出典型非易失性数据存储系统的架构,在这种情况下,采用闪存分区作为存储介质。在一种形式中,该系统封装在可移动卡内,其中,该卡具有沿着一侧延展的电气连接器,以当插入到主机插座中时提供主机接口。可选地,图2的系统可以采用永久性安装的嵌入电路或其它形式,嵌入到主机系统中。系统采用单个控制器301来执行高层主机和存储控制功能。闪存介质由一个或多个闪存装置组成,其中,每个这种装置经常是在其自己的集成电路芯片上形成的。系统控制器和闪存通过总线302连接,其中,总线302允许控制器301载入命令、地址,并且将数据传输到闪存阵列和从其传输数据。控制器301与主机系统(未示出)通过接口连接,通过它,将用户数据传输到闪存阵列和从其传输用户数据。在图2的系统包括在卡中的情况下,主机接口包括卡和主机设备上的匹配插头和插座组合。
控制器301从主机接收命令,以读取或写入以特定逻辑地址开始的一个或多个扇区的用户数据。该地址可以或者可以不与存储分区的物理分块的边界对齐。
如上所述,在具有分为多页的大容量存储分区分块的一些现有技术系统中,来自未被更新分块的数据需要从原始分块拷贝到新分块,该新分块还包含正由主机写入的新更改数据。该技术如图4所示,其中,包括存储器的大量分块中的两个分块。图中示出一个分块11(PBN0)分为8个分页,其中每个分页存储一个扇区的用户数据。包含在各个分页内的开销数据字段包括字段13,它包含分块11的LBN。逻辑分块内逻辑分页的次序相对于物理分块内的对应物理分页是固定的。从未用擦除分块库存中选择类似构造的第二分块15(PBN1)。原始分块11的分页3-5内的数据正被新分块15的三个分页更新。将新数据写入到新分块15的对应分页3-5中,并且将来自分块11的分页0-2、6和7的用户数据拷贝到新分块15的对应分页中。新分块15的所有分页最好采用单一编程操作顺序来编码。在对分块15编程之后,可以擦除原始分块11,并且将其放入库存以作以后使用。分块11和15之间的数据拷贝涉及从原始分块中的一个或多个分页中读取数据,然后将相同数据顺序编程到最新分配分块内的分页,这将大大降低写入性能和存储系统的可用寿命。
参照图5A和5B,部分表示出参照图4所述的数据更新之前(图5A)和之后(图5B)逻辑分块到原始和新物理分块11和15的映射。在本例中,在数据更新之前,原始分块11将LBN 0的分页0-7存储到PBN0的对应分页0-7中。在数据更新之后,新分块15将LBN0的分页0-7存储在PBN1的对应分页0-7中。接收从LBN0读取数据的请求因而引导到物理分块15,而不是物理分块11。在典型控制器操作中,采用图5A和5B所示形式的表根据从物理分页读取的LBN字段13以及当读取数据字段13时所寻址的PBN的知识来构建。该表通常存储在控制器的易失性存储器中以便于访问,但是在任何时候典型地仅存储整个系统的完整表的一部分。该表的一部分通常就是在涉及包括在表部分中的分块的读取或编程操作之前形成的。
在其它现有技术系统中,对分页中的用户数据记录标志,并且这些标志用来表示原始分块内正被最新写入数据替换的数据分页无效。只有新数据才写入到最新分配分块。因此,写入操作没有涉及到但包含在与替换数据相同的物理分块中的那些分页数据不需要拷贝到新分块中。该操作如图6所示,其中,原始分块21(PBN0)内的数据分页3-5再次正被更新。数据23的更新分页3-5写入到新分块25的对应分页中。作为同一操作的一部分,在分页3-5中各自写入旧/新标志27,以表示那些分页的数据旧,而其余分页0-2、6和7的标志27保持设为“新”。类似地,将新PBN1各自写入到分块21内分页3-5的另一开销数据字段中,以表示更新数据位于何处。LBN和分页存储在各个物理分页内的字段31中。
图7A和7B是数据更新完成之前(图7A)和之后(图7B)的数据LBN/分页和PBN/分页之间的对应表。LBN的未变分页0-2、6和7保持映射到PBN0中,而更新分页3-5示出为驻留在PBN1中。图7B的表7B由存储控制器通过在数据更新之后读取分块PBN0内分页的开销数据字段27、29和31来构建。由于在原始分块PBN0的分页3-5中均将标志27设为“旧”,因此该分块将不再出现在这些分页的表中。而是新分块号PBN1出现,它是从更新分页的开销字段29’读取的。当从LBN0读取数据时,读取存储在图7B的右列所列出的分页中的用户数据,然后以所示次序进行组合,以传输到主机。
各种标志典型地位于与其它相关开销数据如LBN和ECC相同的物理分页中。因此,为在数据已被替换的分页中对旧/新标志27等进行编程需要分页支持多编程循环。也就是,存储阵列必须具有可以在擦除之间的至少两个阶段对其分页进行编程的能力。此外,分块必须支持当分块内具有更高偏移或地址的其它分页已经被编程时对分页进行编程的能力。然而,一些闪存的限制由于指定只能以物理顺序方式对分块中的分页进行编程而不能使用这种标志。而且,分页支持有限数目的编程循环,并且在某些情况下不允许对已编程分页进行附加编程。
需要一种在不从现有分块拷贝未变数据或者不将标志编程到先前已编程的分页的情况下可以写入对存储在现有分块中的数据进行部分替换的数据的机制。
【本发明示例性实施例的描述】
存在很多不同类型的快闪EEPROM,其中每种快闪EEPROM均具有其自己的限制,要操作在小量集成电路区域上形成的高性能存储系统,则必须绕开这些限制。某些不支持将任何数据写入到已经被编程的分页中,从而如上所述在包含替换数据的分页中更新标志是不可能的。其它允许写入这种标志,但是在数据正被替换的分页中这样做会干扰同一分块内保持最新的其它分页数据。
已发现存在问题的一种示例性存储系统是“与非(NAND)”类型,其中,存储分区列作为位线和公共电势之间的串联电路串来形成。每个字线跨越由每个这种串中的一个分区形成的一行存储分区。当在多状态模式下工作以在每个这种分区中存储多个数据位时,这种存储器尤其易受这种存储状态干扰的影响。该操作将存储分区晶体管阈值电压范围的可用窗口分为窄小非重叠电压电平范围,其中每个范围随着电平数以及相应的存储在每个分区中的位数的增加而变窄。例如,如果使用四个阈值范围,则在每个分区的存储元件中存储两位数据。并且由于这四个阈值电压范围均必然较小,因此分区状态受到对同一分块内的其它分区进行编程的干扰的机会随着多状态操作而加大。在这种情况下,不能容忍如参照图6、7A和7B所述的旧/新或其它标志写入。
上面参照图4-7B所述的各种现有存储管理技术的一个公共特性是在系统内将逻辑分块号(LBN)和分页偏移映射到最多两个物理分块号(PBN)。一个分块是原始分块,而另一个包含更新分页数据。数据写入到分块中与其逻辑地址(LBA)的低位相对应的分页位置。该映射在各种存储系统中是典型的。在下述技术中,包含更新数据的分页也分配有与其数据已被替换的分页相同的LBN和分页偏移。然而不是将包含原始数据的分页标记为被替换,而是存储控制器通过如下方式区分包含替换数据的分页与包含最新更改版本的分页:(1)例如使用计数器记录写入具有相同逻辑地址的分页的次序;以及/或者(2)根据物理分页地址,其中,当在分块内按照从最低分页地址到最高分页地址的次序写入分页时,较高物理地址包含最新数据副本。因此,当对数据进行读取访问时,如果存在多个包含具有相同逻辑地址的替换数据的分页,则使用最新分页中的数据,而忽略替换数据。
参照图8和9对该技术的第一特定实现进行描述。本例的情形与参照图4-7B所述的现有技术相同,即部分重写分块35内的数据,但是现在示出每个分块包含16个分页。类似于前面所述,分块35(PBN0)的分页3-5中的新数据37写入到先前已被擦除的新分块39(PBN1)的三个分页中。写入到包含更新数据的PBN1分页中的LBN和分页偏移开销数据字段41与初始分块PBN0内的替换数据分页相同。根据字段41和41’内的数据形成的图9的表示出这一情形。第一列中的逻辑LBN和分页偏移映射到第二列中的第一物理分块(PBN0),并且对于已被更新的分页,还映射到第三列中的第二物理分块(PBN1)。各自写入到新分块PBN1内三个更新数据分页中的LBN和逻辑分页偏移41’均与写入到原始分块PBN0的对应逻辑分页中的LBN和逻辑分页偏移41相同。
为了确定具有相同LBN和分页偏移的两个分页中哪个分页包含更新数据,每个分页包含另一开销字段43来表示其编程时间,该时间至少相对于对具有相同逻辑地址的其它分页进行编程的时间。这就允许控制器确定当从存储器读取数据时分配有相同逻辑地址的数据分页的相对年龄。
存在可以写入包含某种形式的时间戳的字段43的若干方式。最直接简单的方式是在该字段中记录对其相关分页的数据进行编程的时间,即系统中实时时钟的输出。具有相同逻辑地址的较晚编程分页因而在字段43中记录有较晚时间。但是当在系统中不能得到这种实时时钟时,可以使用其它技术。一种特定技术是存储模N计数器作为字段43的值。计数器的范围应比被设计为以相同逻辑分页号存储的分页数大1。当更新原始分块PBN0的特定分页数据时,例如,控制器首先读取其数据正被更新的分页的字段43中所存储的计数,对计数增加某个量如1,然后将增加之后的计数作为字段43’写入在新分块PBN1中。当达到计数N+1时,计数器回到0。由于具有相同LBN的分块数小于N,因此存储计数值总是存在不连续点。因而在规格化到不连续点的情况下便于处理回零。
当请求读取数据时,控制器通过比较具有相同LBA和分页偏移的分页的字段43和43’中的计数,容易区分新的和替换分页的数据。然后,根据读取数据文件最新版本的需要,将被标识为新的分页中的数据与未被更新的原始分页组合在一起以形成数据文件的最新版本。
需要注意的是,在图8的例子中,新数据分页37存储在新分块PBN1的前三个分页0-2中,而不是原始分块PBN0内它们所替换的相同分页3-5中。通过记录各个逻辑分页号,在新分块中存储更新数据的分页偏移不需要一定与包含替换数据的旧分块相同。更新数据分页也可以写入到与正被替换数据的分页相同的分块的擦除分页。
这样,所述技术对新数据可以写入到哪个物理分页中没有任何约束。但是,实现这些技术的存储系统可能存在某些约束。例如,一种与非系统要求以顺序方式对分块内的分页进行编程。这意味着在新分块25中对中间分页3-5进行编程(图6)将浪费分页0-2,以后就不能对这些分页进行编程。通过在这种限制系统中将新数据37存储在新分块39的起始可用分页3-7中(图8),其余分页3-7可供以后使用来存储其它数据。实际上,如果在存储新数据37的三个分页的时候分块39在其分页0-4中存储有其它数据,则新数据可以存储在其余未用分页5-7中。这就最大利用这种系统的可用存储容量。
存储在图8的分块内的各个分页中的数据的结构例子如图10所示。最大部分是用户数据45。根据用户数据算出的纠错码(ECC)47也存储在分页中。开销数据49包括LBN和分页标记41(逻辑分页偏移)、时间戳43和根据开销数据算出的ECC 51,它们也存储在分页中。通过包括与用户数据ECC 47相独立的覆盖开销数据的ECC 50,在不需要传输存储在分页中的所有数据的情况下开销49可以以与用户数据相独立的方式读取并且评价为有效。然而,可选地,在单独读取开销数据49不是频繁事件的情况下,分页中的所有数据可以由单个ECC覆盖,从而减小分页中ECC的总位数。
本发明技术的第二特定实现也可以参照图8来描述。在本例中,时间戳仅用来确定存储在分块中的数据的相对时长(age),而具有相同LBN和分页号的数据中的最新分页通过它们的相对物理位置来确定。时间戳43因而不需要作为各分页的一部分来存储。而是,可以作为分块的一部分或者在非易失性存储器内的其它地方,为每个分块记录单个时间戳,并且每次将数据分页写入到分块中时均进行更新。然后,以包含具有相同LBN的数据分页的最新更改分块的最后分页开始,以下降物理地址的次序从分页读取数据。
在图8中,例如,首先在新分块PBN1中从最后(分页15)到第一(分页0)读取分页,然后,以相同的反向次序读取原始分块PBN0的分页。一旦逻辑分页3、4和5已从新分块PBN1读取,则在读取过程期间可以忽略原始分块PBN0内由相同逻辑分页号标识的那些分页中的替换数据。具体地说,在本例中,一旦控制器确定旧分块PBN0内物理分页3、4和5的LBN/分页41与已经从新分块PBN1读取的分页相同,则在读取期间跳过这些分页。该过程可以提高读取速度,并且减少需要为每个分页存储的开销位49。此外,当采用该反向分页读取技术时,在读取操作期间由控制器使用的图9的表可以简化为图5A和5B的形式。只需要知道包含共同逻辑分块数据的那些物理分块的标识和对物理分块进行编程的相对时间,从而执行此高效读取过程。
图11示出通过对最初写入在分块PBN0中的数据进行第二次更新来扩展图8的例子。逻辑分页5、6、7和8的新数据51与它们的LBN和分页号一起写入到新分块PBN1的各自物理分页3、4、5和6。注意,在本例中逻辑分页5的数据正在被第二次更新。在以新分块PBN1的最后分页开始的读取操作期间,首先依次读取感兴趣数据的最新写入逻辑分页8、7、6和5。然后,需要注意,PBN1的物理分页2中的LBN/分页开销字段与从物理分页3中所读取的LBN/分页开销字段相同,从而不读取分页2的用户数据。然后,读取物理分页1和0。下一步,以物理分页15开始,读取原始分块PBN0的分页。在读取物理分页15-9之后,控制器将注意到各分页8-3的LBN/分页字段与已经读取其数据的分页相匹配,从而不需要从这些分页中读取旧数据。因此提高读取过程的效率。最后,读取物理分页2-0的原始数据,因为该数据未被更新。
需要注意,由于以从分页0开始的次序将数据写入在擦除分块的物理分页位置,因此以反向次序读取分页的本例子从替换数据分页选出新数据分页。然而,该技术不限于与具有这种特定编程约束的存储系统一起使用。只要在给定分块内对分页进行编程的次序是已知的,就可以采用写入数据的反向次序读取这些分页中的数据。需要首先读取具有与较早编程的其它分页相同的LBN的最新编程分页,并且这些分页就是最新编程分页。首先读取更新分页的最新版本,从而其后可以容易地识别替换版本。
图12示出图11的例子的逻辑数据与物理分页地址之间的对应表。虽然存在两次数据更新,但是它们均用第二分块PBN1的单列表示。逻辑分页5所对应的以PBN1表示的物理分页根据对该分页的第二次更新而简单改变。如果更新涉及第三分块,则为那个另一分块增加另一列。当不使用反向分页读取技术时,可以通过第一种实现来使用通过从已写入具有共同LBN的数据的分块内的各分页中读取开销数据而构造的图12的表。当使用上述反向分页读取技术时,图12的表只需被构建为标识LBN和包含具有该LBN的数据的所有PBN之间的对应关系。
组织正从其中一个或多个分页已被更新的物理分块中读取的数据分页的高效方式如图13所示。在控制器的易失性存储器中提供足够的空间来一次对至少若干数据分页进行缓冲,并且最好是对完整的数据分块进行缓冲。这如图13所示。与存储在非易失性存储分块中的量相等的十六个数据分页存储在控制器存储器中。由于分页最通常的是无序读取的,因此各个数据分页存储在它相对于其它分页的适当位置。例如,在图11的反向分页读取操作中,首先读取逻辑分页8,从而它存储在控制器存储器的位置8,如圆圈中的“1”所示。下一分页是逻辑分页7等等,直到读取主机所需的所有数据分页,并且将其存储在控制器存储器中。然后,将整个分页数据集合传输到主机,而无需在缓冲存储器中操纵数据次序。数据分页通过将它们写入到控制器存储器中的适当位置而已经得到组织。
图14的流程图示出一种对利用参照图8和9所述技术的非易失性存储系统进行编程的方法。如方框52所示,从主机系统接收所要更新的现有文件的分页数据。首先通过步骤53判定所要存储的更新数据的分页数是否等于或大于系统分块的存储容量,为简单起见在上述例子中示出16个分页作为分块容量。如果是,则在步骤55对一个或多个未用擦除分块进行寻址,并且在步骤57,将新数据分页写入到寻址分块。典型地,一个或多个数据分块的更新将导致一个或多个分块存储已被新数据替换的数据。如果是,如步骤59所示,标识具有替换数据的那些分块以进行擦除。为了提高性能,最好在背景中或者当不发生主机请求编程或读取操作时,发生擦除操作。在被擦除之后,分块返回给未用擦除分块的库存以作进一步的使用。可选地,分块的擦除可以推迟到需要它们进行编程操作的时候。
另一方面,如果在步骤53判定新数据的分页比利用分块的完全存储容量的分页少,则下一步骤61判定在具有以其它数据编程的一些分页的分块中是否有足够的未用分页。如果是,在步骤63对该分块进行寻址。如果否,则在步骤65对完全未用的擦除分块进行寻址。在任一种情况下,在步骤67,将新数据编程到寻址分块的未用分页中。作为该编程过程的一部分,以上述方式将LBN和分页偏移写入到字段41中,并且将时间戳写入到更新数据的各分页的字段43(图8)中。
该编程过程的一个期望特性是使仅存储替换数据的任何分块可用于以后编程。因此,在步骤69询问数据更新过程是否导致仅保留有替换数据的整个分块。如果是,则在步骤71将该分块排入擦除队列,然后过程完成。如果否,则忽略步骤71,并且完成数据更新。
【元分块操作】
为了通过减少编程时间来提高性能,一个目标是在不引起其它恶化的情况下以合理的方式尽可能多地对多个分区进行并行编程。一种实现将存储阵列分为大体上独立的子阵列或单元,如图15的多个单元80-83,其中每个单元又如图所示分为很多分块。因而将数据分页同时编程到多个单元中。另一结构还组合来自多个存储芯片的这些单元中的一个或多个。这些多个芯片可以连接到单个总线(如图2所示),或者连接到多个独立总线以提高数据吞吐量。对此的扩展是链接来自不同单元的分块以一起编程、读取和擦除,一个例子如图15所示。例如,来自各单元80-83的分块85-88可以作为元分块一起操作。对于上述存储器实施例,每个分块作为存储阵列的最小可擦除组典型地分为多个分页,一个分页包含可以在分块内一起编程的最小数目的分区。因此,图15所示的元分块编程操作通常将包括将数据同时编程到形成元分块的各分块85-88的至少一个分页中,对此进行重复,直到元分块满或者输入数据全部已被编程。其它元分块由来自阵列单元的不同分块形成,其中,各单元均有一个分块。
在操作这种存储器的过程中,如同其它,需要经常更新少于整个分块的数据分页。这可以对于元分块的各个分块以相同于上面参照图4或6所述的方式来完成,但是最好使用参照图8所述的改进技术。当使用上述三种技术中的任一种来更新元分块中一个分块的数据时,还使用相同单元内的另一存储分块。此外,数据更新可能要求为元分块的两个或更多分块中的一个或多个分页写入新数据。因而,即使仅更新一些分页中的数据,这还会需要另外使用最大四个分块90-93,其中,四个单元均包括一个另外分块,以更新存储在元分块中的数据文件。
为了减少这种部分分块更新所需的分块,根据本发明的另一方面,如图16所示,只要分块80中还存在未用分页,就使用存储单元80中的另一分块90来更新所述元分块的任何分块内的数据分页。例如,如果一次更新分块86的三个分页和分块88的两个分页中的数据,则新数据的所有五个分页都写入到分块90中。这可以节省使用一个存储分块,从而有效地将可用擦除分块的数目增加一个分块。这将帮助避免或者至少推迟擦除分块库存耗尽的时候。如果正在更新来自四个分块85-88中的每个分块的一个或多个分页,则在单个分块90中对所有新数据分页进行编程,从而避免为进行更新而额外占用三个存储分块。如果新数据的分页数超过未用分块的容量,则分块90不能接受的分页写入到可以处于相同单元80或其它单元81-83中的一个单元内的另一未用分块。
虽然本发明是针对各种示例性实施例来描述的,但是应该理解本发明在所附权利要求的全部范围内受到保护。

Claims (8)

1.一种在非易失性存储系统中以新数据替代更替数据的方法,所述非易失性存储系统具有以分块(35,39)组织的非易失性存储元件阵列,所述分块以分页组织,每个分块包括可一起擦除的最小存储元件组,其中所述更替数据被存储在原始分页中,所述方法包括:
将新数据作为更新分页写入所述分块的分页中;
以相同的逻辑地址寻址原始分页和更新分页;以及
读取和区分所述原始分页和更新分页,
其特征在于:
作为将数据写入分页的一部分,在各个分块中记录有关数据被写入该分块的一个或多个分页中的时间指示,以及
所述读取参考写入所述分块的相对时间,读取存储在包含具有相同逻辑地址的分页的分块中的相对时间的指示,使用具有更近时间指示的分块中的数据并且忽略具有更早时间指示的分块中的数据,其中具有更近时间指示的分块的分页按照与这些分页被写入该分块时相反的顺序被读取,并且该分块内具有相同逻辑地址的、作为已经被读取的分页的任何分页都被忽略。
2.根据权利要求1的方法,其中在存储系统的各个分块中的分页以指定的顺序编程。
3.根据权利要求1或2的方法,包括步骤:以两个以上的存储状态操作各个存储元件,从而在每个存储元件中存储多位数据,并且其中读取数据分页包括从各个存储元件中读取两个以上的存储状态。
4.一种非易失性存储系统,包括:
以分块(35,39)组织的非易失性存储元件阵列,所述分块以分页组织,其中分块包括可一起擦除的最小存储元件组;
编程机构,将另一所述分块的原始分页的更新版本写入所述分块的更新分页中;
寻址机构(401、402、450),寻址具有相同逻辑地址的原始分页和更新分页;以及
读取机构(404、450、454),区分更新分页和原始分页,
其特征在于:
所述编程机构在各个分块中记录有关数据被写入该分块的一个或多个分页中的时间指示,以及
所述读取机构参考写入所述分块的分页的相对时间,读取记录在包含原始分页和更新分页的分块中的相对时间的指示,使用具有更近时间指示的分块的分页中的数据并且忽略具有更早时间指示的分块的分页中的数据,其中具有更近时间指示的分块的分页按照与这些分页被编程到该分块中时相反的顺序被读取,并且该分块内具有相同逻辑地址的、作为已经被读取的分页的任何分页都被忽略。
5.根据权利要求4所述的存储系统,其中所述存储元件包括各个浮动栅。
6.根据权利要求4或5所述的存储系统,其在具有用于与主机系统连接的电气连接端的封装卡内形成。
7.根据权利要求4或5所述的存储系统,其中写入所述分块的分页的相对时间从系统时钟写入其中。
8.根据权利要求6所述的存储系统,其中写入所述分块的分页的相对时间从系统时钟写入其中。
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Families Citing this family (452)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
JP3215237B2 (ja) * 1993-10-01 2001-10-02 富士通株式会社 記憶装置および記憶装置の書き込み/消去方法
KR100544175B1 (ko) * 1999-05-08 2006-01-23 삼성전자주식회사 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법
US6426893B1 (en) * 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6763424B2 (en) * 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
WO2003005203A2 (en) * 2001-07-03 2003-01-16 Research In Motion Limited System and method of object-oriented persistence
US7108975B2 (en) * 2001-09-21 2006-09-19 Regents Of The University Of Michigan Atlastin
KR100449708B1 (ko) * 2001-11-16 2004-09-22 삼성전자주식회사 플래시 메모리 관리방법
US6871257B2 (en) 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
JP2004062554A (ja) * 2002-07-30 2004-02-26 Oki Electric Ind Co Ltd フラッシュメモリの管理方法
KR100944054B1 (ko) * 2002-08-29 2010-02-24 파나소닉 주식회사 반도체메모리장치 및 플래시메모리에의 데이터기입방법
US7234036B1 (en) 2002-10-28 2007-06-19 Sandisk Corporation Method and apparatus for resolving physical blocks associated with a common logical block
US7039788B1 (en) 2002-10-28 2006-05-02 Sandisk Corporation Method and apparatus for splitting a logical block
AU2003282544A1 (en) * 2002-10-28 2004-05-25 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US7254668B1 (en) 2002-10-28 2007-08-07 Sandisk Corporation Method and apparatus for grouping pages within a block
DE10252059B3 (de) * 2002-11-08 2004-04-15 Infineon Technologies Ag Verfahren zum Betreiben einer Speicheranordnung
US7478248B2 (en) * 2002-11-27 2009-01-13 M-Systems Flash Disk Pioneers, Ltd. Apparatus and method for securing data on a portable storage device
EP1435576B1 (en) * 2003-01-03 2013-03-20 Austria Card Plastikkarten und Ausweissysteme GmbH Method and apparatus for block-oriented memory management provided in smart card controllers
US6944063B2 (en) 2003-01-28 2005-09-13 Sandisk Corporation Non-volatile semiconductor memory with large erase blocks storing cycle counts
JP2004265162A (ja) * 2003-03-03 2004-09-24 Renesas Technology Corp 記憶装置およびアドレス管理方法
KR100526178B1 (ko) * 2003-03-31 2005-11-03 삼성전자주식회사 플래시 메모리 액세스 장치 및 방법
US20040228411A1 (en) * 2003-05-12 2004-11-18 Sony Corporation Method and system for decoder clock control in presence of jitter
US7117326B2 (en) * 2003-06-26 2006-10-03 Intel Corporation Tracking modifications to a memory
US6891740B2 (en) * 2003-08-29 2005-05-10 Hitachi Global Storage Technologies Netherlands B.V. Method for speculative streaming data from a disk drive
US7188228B1 (en) 2003-10-01 2007-03-06 Sandisk Corporation Hybrid mapping implementation within a non-volatile memory system
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
JP2005128771A (ja) * 2003-10-23 2005-05-19 Fujitsu Ltd データファイルシステム、データアクセスサーバ、およびデータアクセスプログラム
DE10349595B3 (de) * 2003-10-24 2004-12-09 Hyperstone Ag Verfahren zum Schreiben von Speichersektoren in einem blockweise löschbaren Speicher
KR100608602B1 (ko) * 2003-12-10 2006-08-03 삼성전자주식회사 플래시 메모리, 이를 위한 사상 제어 장치 및 방법
JP2005190288A (ja) * 2003-12-26 2005-07-14 Tdk Corp メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びに、フラッシュメモリの制御方法
US7631138B2 (en) * 2003-12-30 2009-12-08 Sandisk Corporation Adaptive mode switching of flash memory address mapping based on host usage characteristics
WO2005066792A2 (en) * 2003-12-30 2005-07-21 Sandisk Corporation Non-volatile memory and method with memory planes alignment
US7173863B2 (en) 2004-03-08 2007-02-06 Sandisk Corporation Flash controller cache architecture
KR100526188B1 (ko) * 2003-12-30 2005-11-04 삼성전자주식회사 플래시 메모리의 주소 사상 방법, 사상 정보 관리 방법 및상기 방법을 이용한 플래시 메모리
US7139864B2 (en) 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US20050144363A1 (en) * 2003-12-30 2005-06-30 Sinclair Alan W. Data boundary management
US7383375B2 (en) * 2003-12-30 2008-06-03 Sandisk Corporation Data run programming
US20050144516A1 (en) * 2003-12-30 2005-06-30 Gonzalez Carlos J. Adaptive deterministic grouping of blocks into multi-block units
US7433993B2 (en) * 2003-12-30 2008-10-07 San Disk Corportion Adaptive metablocks
US8504798B2 (en) * 2003-12-30 2013-08-06 Sandisk Technologies Inc. Management of non-volatile memory systems having large erase blocks
DE102004005290B3 (de) * 2004-02-03 2005-07-21 Giesecke & Devrient Gmbh Verfahren und Vorrichtung zur Absicherung von Daten in einem nichtflüchtigen Datenspeicher
US7127549B2 (en) 2004-02-04 2006-10-24 Sandisk Corporation Disk acceleration using first and second storage devices
US7136973B2 (en) 2004-02-04 2006-11-14 Sandisk Corporation Dual media storage device
KR100526190B1 (ko) * 2004-02-06 2005-11-03 삼성전자주식회사 플래시 메모리의 재사상 방법
US7529904B2 (en) * 2004-03-31 2009-05-05 International Business Machines Corporation Storing location identifier in array and array pointer in data structure for write process management
US7325090B2 (en) 2004-04-29 2008-01-29 Sandisk Il Ltd. Refreshing data stored in a flash memory
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
JP4253272B2 (ja) * 2004-05-27 2009-04-08 株式会社東芝 メモリカード、半導体装置、及び半導体メモリの制御方法
US8429313B2 (en) * 2004-05-27 2013-04-23 Sandisk Technologies Inc. Configurable ready/busy control
US7395384B2 (en) 2004-07-21 2008-07-01 Sandisk Corproation Method and apparatus for maintaining data on non-volatile memory systems
US8607016B2 (en) * 2004-07-21 2013-12-10 Sandisk Technologies Inc. FAT analysis for optimized sequential cluster management
US8375146B2 (en) 2004-08-09 2013-02-12 SanDisk Technologies, Inc. Ring bus structure and its use in flash memory systems
JP3942612B2 (ja) * 2004-09-10 2007-07-11 東京エレクトロンデバイス株式会社 記憶装置、メモリ管理方法及びプログラム
JP4586469B2 (ja) * 2004-09-15 2010-11-24 ソニー株式会社 メモリ制御装置、メモリ制御方法、プログラム
KR100624960B1 (ko) * 2004-10-05 2006-09-15 에스티마이크로일렉트로닉스 엔.브이. 반도체 메모리 장치 및 이의 패키지 및 이를 이용한메모리 카드
US7441067B2 (en) 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7120051B2 (en) 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7366826B2 (en) * 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
US7386655B2 (en) * 2004-12-16 2008-06-10 Sandisk Corporation Non-volatile memory and method with improved indexing for scratch pad and update blocks
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US8122193B2 (en) 2004-12-21 2012-02-21 Samsung Electronics Co., Ltd. Storage device and user device including the same
US7409473B2 (en) 2004-12-21 2008-08-05 Sandisk Corporation Off-chip data relocation
KR100669342B1 (ko) * 2004-12-21 2007-01-16 삼성전자주식회사 낸드 플래시 메모리 장치의 프로그램 방법
KR100684887B1 (ko) * 2005-02-04 2007-02-20 삼성전자주식회사 플래시 메모리를 포함한 데이터 저장 장치 및 그것의 머지방법
US7882299B2 (en) * 2004-12-21 2011-02-01 Sandisk Corporation System and method for use of on-chip non-volatile memory write cache
US7212440B2 (en) 2004-12-30 2007-05-01 Sandisk Corporation On-chip data grouping and alignment
KR100698655B1 (ko) * 2005-01-04 2007-03-23 주식회사 팬택앤큐리텔 이동통신 단말기의 파일 업데이트 시스템과, efs 영역헤더 손실로 인한 치명적인 에러를 방지하는 이동통신단말기의 부팅 관리 시스템과, 이동통신 단말기의 파일업데이트 방법 및 efs 영역 헤더 손실로 인한 치명적인에러를 방지하는 이동통신 단말기의 부팅 방법
US7315917B2 (en) 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
US20060184719A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct data file storage implementation techniques in flash memories
US9104315B2 (en) 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
US20060184718A1 (en) * 2005-02-16 2006-08-17 Sinclair Alan W Direct file data programming and deletion in flash memories
US7877539B2 (en) * 2005-02-16 2011-01-25 Sandisk Corporation Direct data file storage in flash memories
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
EP1712984A1 (en) * 2005-04-15 2006-10-18 Deutsche Thomson-Brandt Gmbh Method and system for accessing logical data blocks in a storage system that includes multiple memories which are connected to at least one common bus
EP2378432A1 (en) 2005-04-21 2011-10-19 Violin Memory, Inc. Interconnection system
US9384818B2 (en) 2005-04-21 2016-07-05 Violin Memory Memory power management
US8200887B2 (en) 2007-03-29 2012-06-12 Violin Memory, Inc. Memory management system and method
JP5130646B2 (ja) 2005-06-06 2013-01-30 ソニー株式会社 記憶装置
US7797479B2 (en) * 2005-06-30 2010-09-14 Intel Corporation Technique to write to a non-volatile memory
US7480766B2 (en) * 2005-08-03 2009-01-20 Sandisk Corporation Interfacing systems operating through a logical address space and on a direct data file basis
US7558906B2 (en) 2005-08-03 2009-07-07 Sandisk Corporation Methods of managing blocks in nonvolatile memory
US7552271B2 (en) 2005-08-03 2009-06-23 Sandisk Corporation Nonvolatile memory with block management
US7669003B2 (en) * 2005-08-03 2010-02-23 Sandisk Corporation Reprogrammable non-volatile memory systems with indexing of directly stored data files
US7409489B2 (en) * 2005-08-03 2008-08-05 Sandisk Corporation Scheduling of reclaim operations in non-volatile memory
US7949845B2 (en) * 2005-08-03 2011-05-24 Sandisk Corporation Indexing of file data in reprogrammable non-volatile memories that directly store data files
US7627733B2 (en) 2005-08-03 2009-12-01 Sandisk Corporation Method and system for dual mode access for storage devices
KR100714873B1 (ko) * 2005-09-06 2007-05-07 삼성전자주식회사 비휘발성 메모리에서 데이터 갱신 방법 및 이를 위한 장치
US8429326B2 (en) 2005-09-12 2013-04-23 Mediatek Inc. Method and system for NAND-flash identification without reading device ID table
CN100375026C (zh) * 2005-09-13 2008-03-12 联想(北京)有限公司 快速存储设备软件的安装/更新方法
US20070089023A1 (en) * 2005-09-30 2007-04-19 Sigmatel, Inc. System and method for system resource access
US7529905B2 (en) * 2005-10-13 2009-05-05 Sandisk Corporation Method of storing transformed units of data in a memory system having fixed sized storage blocks
US7814262B2 (en) * 2005-10-13 2010-10-12 Sandisk Corporation Memory system storing transformed units of data in fixed sized storage blocks
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
US20070106842A1 (en) * 2005-11-04 2007-05-10 Conley Kevin M Enhanced first level storage caching methods using nonvolatile memory
US7634585B2 (en) * 2005-11-04 2009-12-15 Sandisk Corporation In-line cache using nonvolatile memory between host and disk device
US7447066B2 (en) * 2005-11-08 2008-11-04 Sandisk Corporation Memory with retargetable memory cell redundancy
US7877540B2 (en) * 2005-12-13 2011-01-25 Sandisk Corporation Logically-addressed file storage methods
US7730453B2 (en) * 2005-12-13 2010-06-01 Microsoft Corporation Runtime detection for invalid use of zero-length memory allocations
JP2009521049A (ja) * 2005-12-21 2009-05-28 エヌエックスピー ビー ヴィ ブロック消去可能な記憶場所を有するメモリ
US20070143567A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for data alignment in non-volatile memories with a directly mapped file storage system
US7747837B2 (en) 2005-12-21 2010-06-29 Sandisk Corporation Method and system for accessing non-volatile storage devices
US9213627B2 (en) 2005-12-21 2015-12-15 Nxp B.V. Non-volatile memory with block erasable locations
US20070143378A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with adaptive file handling in a directly mapped file storage system
US20070156998A1 (en) * 2005-12-21 2007-07-05 Gorobets Sergey A Methods for memory allocation in non-volatile memories with a directly mapped file storage system
US20070143566A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Non-volatile memories with data alignment in a directly mapped file storage system
US7769978B2 (en) * 2005-12-21 2010-08-03 Sandisk Corporation Method and system for accessing non-volatile storage devices
US20070143561A1 (en) * 2005-12-21 2007-06-21 Gorobets Sergey A Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system
US7793068B2 (en) 2005-12-21 2010-09-07 Sandisk Corporation Dual mode access for non-volatile storage devices
US7546515B2 (en) * 2005-12-27 2009-06-09 Sandisk Corporation Method of storing downloadable firmware on bulk media
US7536627B2 (en) * 2005-12-27 2009-05-19 Sandisk Corporation Storing downloadable firmware on bulk media
KR100772863B1 (ko) 2006-01-13 2007-11-02 삼성전자주식회사 요구 페이징 기법을 적용한 시스템에서 페이지 교체 수행시간을 단축시키는 방법 및 장치
US7793059B2 (en) * 2006-01-18 2010-09-07 Apple Inc. Interleaving policies for flash memory
US7609561B2 (en) * 2006-01-18 2009-10-27 Apple Inc. Disabling faulty flash memory dies
US7752391B2 (en) * 2006-01-20 2010-07-06 Apple Inc. Variable caching policy system and method
US7702935B2 (en) * 2006-01-25 2010-04-20 Apple Inc. Reporting flash memory operating voltages
US20070174641A1 (en) * 2006-01-25 2007-07-26 Cornwell Michael J Adjusting power supplies for data storage devices
TWI311327B (en) * 2006-01-26 2009-06-21 Nuvoton Technology Corporatio Method for page random write and read in the block of flash memory
US7861122B2 (en) * 2006-01-27 2010-12-28 Apple Inc. Monitoring health of non-volatile memory
US7912994B2 (en) * 2006-01-27 2011-03-22 Apple Inc. Reducing connection time for mass storage class peripheral by internally prefetching file data into local cache in response to connection to host
US7594043B2 (en) * 2006-01-27 2009-09-22 Apple Inc. Reducing dismount time for mass storage class devices
JP2007280108A (ja) * 2006-04-07 2007-10-25 Sony Corp 記憶媒体制御装置、記憶媒体制御方法、プログラム
US7849302B2 (en) * 2006-04-10 2010-12-07 Apple Inc. Direct boot arrangement using a NAND flash memory
US7451264B2 (en) * 2006-04-13 2008-11-11 Sandisk Corporation Cycle count storage methods
US7467253B2 (en) * 2006-04-13 2008-12-16 Sandisk Corporation Cycle count storage systems
US7511646B2 (en) * 2006-05-15 2009-03-31 Apple Inc. Use of 8-bit or higher A/D for NAND cell value
US7639542B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US7911834B2 (en) * 2006-05-15 2011-03-22 Apple Inc. Analog interface for a flash memory die
US7701797B2 (en) * 2006-05-15 2010-04-20 Apple Inc. Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US8000134B2 (en) 2006-05-15 2011-08-16 Apple Inc. Off-die charge pump that supplies multiple flash devices
US7613043B2 (en) * 2006-05-15 2009-11-03 Apple Inc. Shifting reference values to account for voltage sag
US7568135B2 (en) 2006-05-15 2009-07-28 Apple Inc. Use of alternative value in cell detection
US7639531B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Dynamic cell bit resolution
US7852690B2 (en) * 2006-05-15 2010-12-14 Apple Inc. Multi-chip package for a flash memory
US7551486B2 (en) * 2006-05-15 2009-06-23 Apple Inc. Iterative memory cell charging based on reference cell value
JP4153535B2 (ja) * 2006-05-30 2008-09-24 Tdk株式会社 メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びに、フラッシュメモリの制御方法
US7567461B2 (en) * 2006-08-18 2009-07-28 Micron Technology, Inc. Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
US8001314B2 (en) 2006-09-12 2011-08-16 Apple Inc. Storing a driver for controlling a memory
US7593259B2 (en) 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
US7646054B2 (en) * 2006-09-19 2010-01-12 Sandisk Corporation Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7696044B2 (en) * 2006-09-19 2010-04-13 Sandisk Corporation Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US20080091901A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Method for non-volatile memory with worst-case control data management
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
KR100771521B1 (ko) 2006-10-30 2007-10-30 삼성전자주식회사 멀티 레벨 셀을 포함하는 플래시 메모리 장치 및 그것의데이터 쓰기 방법
US8151060B2 (en) * 2006-11-28 2012-04-03 Hitachi, Ltd. Semiconductor memory system having a snapshot function
US8074011B2 (en) * 2006-12-06 2011-12-06 Fusion-Io, Inc. Apparatus, system, and method for storage space recovery after reaching a read count limit
US9495241B2 (en) 2006-12-06 2016-11-15 Longitude Enterprise Flash S.A.R.L. Systems and methods for adaptive data storage
WO2008070191A2 (en) 2006-12-06 2008-06-12 Fusion Multisystems, Inc. (Dba Fusion-Io) Apparatus, system, and method for a reconfigurable baseboard management controller
US9116823B2 (en) 2006-12-06 2015-08-25 Intelligent Intellectual Property Holdings 2 Llc Systems and methods for adaptive error-correction coding
JP2008152464A (ja) * 2006-12-15 2008-07-03 Toshiba Corp 記憶装置
KR101354152B1 (ko) * 2006-12-18 2014-01-27 삼성전자주식회사 비휘발성 데이터 저장장치에 구비된 가상 파일 시스템의작업 스케줄링 방법 및 장치
US7554855B2 (en) * 2006-12-20 2009-06-30 Mosaid Technologies Incorporated Hybrid solid-state memory system having volatile and non-volatile memory
US7642160B2 (en) * 2006-12-21 2010-01-05 Sandisk Corporation Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches
US7800161B2 (en) * 2006-12-21 2010-09-21 Sandisk Corporation Flash NAND memory cell array with charge storage elements positioned in trenches
US8370561B2 (en) * 2006-12-24 2013-02-05 Sandisk Il Ltd. Randomizing for suppressing errors in a flash memory
US8127200B2 (en) * 2006-12-24 2012-02-28 Sandisk Il Ltd. Flash memory device and system with randomizing for suppressing errors
US20080155175A1 (en) * 2006-12-26 2008-06-26 Sinclair Alan W Host System That Manages a LBA Interface With Flash Memory
US7739444B2 (en) 2006-12-26 2010-06-15 Sandisk Corporation System using a direct data file system with a continuous logical address space interface
US8209461B2 (en) 2006-12-26 2012-06-26 Sandisk Technologies Inc. Configuration of host LBA interface with flash memory
US7917686B2 (en) * 2006-12-26 2011-03-29 Sandisk Corporation Host system with direct data file interface configurability
US8046522B2 (en) * 2006-12-26 2011-10-25 SanDisk Technologies, Inc. Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks
US8166267B2 (en) * 2006-12-26 2012-04-24 Sandisk Technologies Inc. Managing a LBA interface in a direct data file memory system
KR100825802B1 (ko) * 2007-02-13 2008-04-29 삼성전자주식회사 기입 데이터의 논리적 페이지보다 이전 논리적 페이지들을가지는 데이터들을 데이터 블록으로부터 복사하는 불휘발성메모리 장치의 데이터 기입 방법
US7577059B2 (en) * 2007-02-27 2009-08-18 Mosaid Technologies Incorporated Decoding control with address transition detection in page erase function
US20090088088A1 (en) * 2007-02-28 2009-04-02 Crick Information Technologies Personal Information Communication Device and Method
WO2008106269A1 (en) * 2007-02-28 2008-09-04 Ty Joseph Caswell Personal information communication device and method
US7804718B2 (en) * 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
US7814304B2 (en) * 2007-03-14 2010-10-12 Apple Inc. Switching drivers between processors
US7613051B2 (en) 2007-03-14 2009-11-03 Apple Inc. Interleaving charge pumps for programmable memories
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US11010076B2 (en) 2007-03-29 2021-05-18 Violin Systems Llc Memory system with multiple striping of raid groups and method for performing the same
US9632870B2 (en) 2007-03-29 2017-04-25 Violin Memory, Inc. Memory system with multiple striping of raid groups and method for performing the same
US7869277B1 (en) 2007-04-25 2011-01-11 Apple Inc. Managing data writing to memories
US7870327B1 (en) 2007-04-25 2011-01-11 Apple Inc. Controlling memory operations using a driver and flash memory type tables
US7996599B2 (en) 2007-04-25 2011-08-09 Apple Inc. Command resequencing in memory operations
US7913032B1 (en) 2007-04-25 2011-03-22 Apple Inc. Initiating memory wear leveling
US20080288712A1 (en) 2007-04-25 2008-11-20 Cornwell Michael J Accessing metadata with an external host
JP4702703B2 (ja) * 2007-04-26 2011-06-15 Tdk株式会社 メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
US8332574B2 (en) * 2007-04-30 2012-12-11 Sandisk Il Ltd. Method for efficient storage of metadata in flash memory
US7577029B2 (en) * 2007-05-04 2009-08-18 Mosaid Technologies Incorporated Multi-level cell access buffer with dual function
US8073648B2 (en) * 2007-05-14 2011-12-06 Sandisk Il Ltd. Measuring threshold voltage distribution in memory using an aggregate characteristic
US20080294814A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Flash Memory System with Management of Housekeeping Operations
US20080294813A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Managing Housekeeping Operations in Flash Memory
JP5216003B2 (ja) 2007-06-01 2013-06-19 パナソニック株式会社 記録装置
US8239639B2 (en) * 2007-06-08 2012-08-07 Sandisk Technologies Inc. Method and apparatus for providing data type and host file information to a mass storage system
US20080307156A1 (en) * 2007-06-08 2008-12-11 Sinclair Alan W System For Interfacing A Host Operating Through A Logical Address Space With A Direct File Storage Medium
US8713283B2 (en) * 2007-06-08 2014-04-29 Sandisk Technologies Inc. Method of interfacing a host operating through a logical address space with a direct file storage medium
US8504784B2 (en) * 2007-06-27 2013-08-06 Sandisk Technologies Inc. Scheduling methods of phased garbage collection and housekeeping operations in a flash memory system
JP5087347B2 (ja) * 2007-09-06 2012-12-05 株式会社日立製作所 半導体記憶装置及び半導体記憶装置の制御方法
US8365040B2 (en) 2007-09-20 2013-01-29 Densbits Technologies Ltd. Systems and methods for handling immediate data errors in flash memory
US8566504B2 (en) * 2007-09-28 2013-10-22 Sandisk Technologies Inc. Dynamic metablocks
US8694715B2 (en) 2007-10-22 2014-04-08 Densbits Technologies Ltd. Methods for adaptively programming flash memory devices and flash memory systems incorporating same
JP4535117B2 (ja) 2007-11-06 2010-09-01 ソニー株式会社 メモリ装置、メモリ管理方法、およびプログラム
US8296498B2 (en) * 2007-11-13 2012-10-23 Sandisk Technologies Inc. Method and system for virtual fast access non-volatile RAM
US7613045B2 (en) * 2007-11-26 2009-11-03 Sandisk Il, Ltd. Operation sequence and commands for measuring threshold voltage distribution in memory
US8751726B2 (en) 2007-12-05 2014-06-10 Densbits Technologies Ltd. System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices
US8195912B2 (en) * 2007-12-06 2012-06-05 Fusion-io, Inc Apparatus, system, and method for efficient mapping of virtual and physical addresses
US7836226B2 (en) 2007-12-06 2010-11-16 Fusion-Io, Inc. Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment
WO2009074978A2 (en) 2007-12-12 2009-06-18 Densbits Technologies Ltd. Systems and methods for error correction and decoding on multi-level physical media
US20090164745A1 (en) * 2007-12-21 2009-06-25 Alan Sinclair System and Method for Controlling an Amount of Unprogrammed Capacity in Memory Blocks of a Mass Storage System
US8880483B2 (en) * 2007-12-21 2014-11-04 Sandisk Technologies Inc. System and method for implementing extensions to intelligently manage resources of a mass storage system
US7934052B2 (en) 2007-12-27 2011-04-26 Pliant Technology, Inc. System and method for performing host initiated mass storage commands using a hierarchy of data structures
TW200931425A (en) * 2008-01-11 2009-07-16 Phison Electronics Corp Method for managing flash memory blocks and controller using the same
US8068365B2 (en) 2008-02-04 2011-11-29 Mosaid Technologies Incorporated Non-volatile memory device having configurable page size
WO2009097681A1 (en) 2008-02-04 2009-08-13 Mosaid Technologies Incorporated Flexible memory operations in nand flash devices
JP2009199211A (ja) * 2008-02-20 2009-09-03 Sony Computer Entertainment Inc メモリ制御方法及び装置、コンピュータプログラム
CN101978361B (zh) 2008-02-20 2013-06-05 索尼电脑娱乐公司 存储器控制方法以及装置、存储器访问控制方法
JP4675985B2 (ja) 2008-03-01 2011-04-27 株式会社東芝 メモリシステム
JP2009211234A (ja) * 2008-03-01 2009-09-17 Toshiba Corp メモリシステム
WO2009118720A2 (en) 2008-03-25 2009-10-01 Densbits Technologies Ltd. Apparatus and methods for hardware-efficient unbiased rounding
US8695087B2 (en) * 2008-04-04 2014-04-08 Sandisk Il Ltd. Access control for a memory device
US20100017558A1 (en) 2008-04-11 2010-01-21 Richard Matthew Fruin Memory device operable in read-only and re-writable modes of operation
KR100982440B1 (ko) 2008-06-12 2010-09-15 (주)명정보기술 단일 플래시 메모리의 데이터 관리시스템
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
JP5180726B2 (ja) * 2008-07-31 2013-04-10 株式会社日立製作所 記憶装置およびデータ書き込み制御方法
US20100037102A1 (en) * 2008-08-08 2010-02-11 Seagate Technology Llc Fault-tolerant non-volatile buddy memory structure
US8438325B2 (en) * 2008-10-09 2013-05-07 Cadence Design Systems, Inc. Method and apparatus for improving small write performance in a non-volatile memory
US8650355B2 (en) * 2008-10-15 2014-02-11 Seagate Technology Llc Non-volatile resistive sense memory on-chip cache
US7830700B2 (en) * 2008-11-12 2010-11-09 Seagate Technology Llc Resistive sense memory array with partial block update capability
JP5193822B2 (ja) * 2008-11-19 2013-05-08 株式会社東芝 追記型メモリデバイス
US8452940B2 (en) * 2008-12-30 2013-05-28 Sandisk Technologies Inc. Optimized memory management for random and sequential data writing
US8205063B2 (en) * 2008-12-30 2012-06-19 Sandisk Technologies Inc. Dynamic mapping of logical ranges to write blocks
US8040744B2 (en) * 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8244960B2 (en) 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US20100174845A1 (en) * 2009-01-05 2010-07-08 Sergey Anatolievich Gorobets Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques
US8094500B2 (en) * 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8700840B2 (en) * 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
JP4666081B2 (ja) * 2009-02-09 2011-04-06 Tdk株式会社 メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
JP4844639B2 (ja) * 2009-02-19 2011-12-28 Tdk株式会社 メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
US8489801B2 (en) * 2009-03-04 2013-07-16 Henry F. Huang Non-volatile memory with hybrid index tag array
JP5341584B2 (ja) * 2009-03-17 2013-11-13 株式会社東芝 コントローラ、及びメモリシステム
US8819385B2 (en) 2009-04-06 2014-08-26 Densbits Technologies Ltd. Device and method for managing a flash memory
US8458574B2 (en) 2009-04-06 2013-06-04 Densbits Technologies Ltd. Compact chien-search based decoding apparatus and method
US8832353B2 (en) * 2009-04-07 2014-09-09 Sandisk Technologies Inc. Host stop-transmission handling
KR101556779B1 (ko) * 2009-04-17 2015-10-02 삼성전자주식회사 저장 장치의 액세스 방법
US8296503B2 (en) * 2009-05-26 2012-10-23 Mediatek Inc. Data updating and recovering methods for a non-volatile memory array
CN102576330B (zh) * 2009-06-12 2015-01-28 提琴存储器公司 具有持久化无用单元收集机制的存储系统
US8307241B2 (en) * 2009-06-16 2012-11-06 Sandisk Technologies Inc. Data recovery in multi-level cell nonvolatile memory
US20110035540A1 (en) * 2009-08-10 2011-02-10 Adtron, Inc. Flash blade system architecture and method
TWI425513B (zh) * 2009-08-13 2014-02-01 Silicon Motion Inc 識別快閃記憶體中區塊之資料頁的方法以及相關之記憶裝置
US8130543B2 (en) * 2009-08-13 2012-03-06 Macronix International Co., Ltd. Method and apparatus for increasing memory programming efficiency through dynamic switching of sense amplifiers
KR20110018157A (ko) * 2009-08-17 2011-02-23 삼성전자주식회사 플래시 메모리 장치의 액세스 방법
US9330767B1 (en) 2009-08-26 2016-05-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory module and method for programming a page of flash memory cells
US8995197B1 (en) 2009-08-26 2015-03-31 Densbits Technologies Ltd. System and methods for dynamic erase and program control for flash memory device memories
JP5377175B2 (ja) * 2009-09-08 2013-12-25 株式会社東芝 コントローラ、及びデータ記憶装置
US8255655B2 (en) 2009-10-02 2012-08-28 Sandisk Technologies Inc. Authentication and securing of write-once, read-many (WORM) memory devices
US8730729B2 (en) * 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
US8724387B2 (en) 2009-10-22 2014-05-13 Densbits Technologies Ltd. Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
US8364929B2 (en) * 2009-10-23 2013-01-29 Seagate Technology Llc Enabling spanning for a storage device
US8745353B2 (en) * 2009-10-23 2014-06-03 Seagate Technology Llc Block boundary resolution for mismatched logical and physical block sizes
WO2011058700A1 (ja) 2009-11-11 2011-05-19 パナソニック株式会社 アクセス装置、情報記録装置、コントローラ、リアルタイム情報記録システム、アクセス方法、および、プログラム
EP2507710B1 (en) * 2009-11-30 2018-10-31 Hewlett-Packard Enterprise Development LP Remapping for memory wear leveling
US9037777B2 (en) 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
TWI446349B (zh) * 2010-03-04 2014-07-21 Phison Electronics Corp 非揮發性記憶體存取方法、系統,與非揮發性記憶體控制器
CN102193871B (zh) * 2010-03-12 2014-08-20 群联电子股份有限公司 非挥发性存储器存取方法、系统及非挥发性存储器控制器
US8745317B2 (en) 2010-04-07 2014-06-03 Densbits Technologies Ltd. System and method for storing information in a multi-level cell memory
US8886664B2 (en) 2010-05-13 2014-11-11 Microsoft Corporation Decreasing duplicates and loops in an activity record
US8381018B2 (en) 2010-05-21 2013-02-19 Mediatek Inc. Method for data recovery for flash devices
US8838878B2 (en) * 2010-06-01 2014-09-16 Greenliant Llc Method of writing to a NAND memory block based file system with log based buffering
KR20110138076A (ko) * 2010-06-18 2011-12-26 삼성전자주식회사 데이터 저장 장치 및 그것의 쓰기 방법
US8626986B2 (en) * 2010-06-30 2014-01-07 Sandisk Technologies Inc. Pre-emptive garbage collection of memory blocks
US8621321B2 (en) 2010-07-01 2013-12-31 Densbits Technologies Ltd. System and method for multi-dimensional encoding and decoding
JP4818453B1 (ja) * 2010-07-30 2011-11-16 株式会社東芝 電子機器およびデータ読み出し方法
US8964464B2 (en) 2010-08-24 2015-02-24 Densbits Technologies Ltd. System and method for accelerated sampling
US8850161B2 (en) * 2010-10-13 2014-09-30 Riverbed Technology, Inc. Method of improving performance of a data storage device
US9063878B2 (en) 2010-11-03 2015-06-23 Densbits Technologies Ltd. Method, system and computer readable medium for copy back
US9003153B2 (en) 2010-11-08 2015-04-07 Greenliant Llc Method of storing blocks of data in a plurality of memory devices in a redundant manner, a memory controller and a memory system
US20120117305A1 (en) * 2010-11-08 2012-05-10 Greenliant Llc Method Of Storing Blocks Of Data In A Plurality Of Memory Devices For High Speed Sequential Read, A Memory Controller And A Memory System
US8850100B2 (en) 2010-12-07 2014-09-30 Densbits Technologies Ltd. Interleaving codeword portions between multiple planes and/or dies of a flash memory device
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US8626989B2 (en) * 2011-02-02 2014-01-07 Micron Technology, Inc. Control arrangements and methods for accessing block oriented nonvolatile memory
US8909851B2 (en) 2011-02-08 2014-12-09 SMART Storage Systems, Inc. Storage control system with change logging mechanism and method of operation thereof
US8935466B2 (en) 2011-03-28 2015-01-13 SMART Storage Systems, Inc. Data storage system with non-volatile memory and method of operation thereof
US8990665B1 (en) 2011-04-06 2015-03-24 Densbits Technologies Ltd. System, method and computer program product for joint search of a read threshold and soft decoding
US9324433B2 (en) * 2011-04-25 2016-04-26 Microsoft Technology Licensing, Llc Intelligent flash reprogramming
TWI442230B (zh) * 2011-04-28 2014-06-21 Phison Electronics Corp 資料寫入方法、記憶體控制器與記憶體儲存裝置
US9195592B1 (en) 2011-05-12 2015-11-24 Densbits Technologies Ltd. Advanced management of a non-volatile memory
US9396106B2 (en) 2011-05-12 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US8996790B1 (en) 2011-05-12 2015-03-31 Densbits Technologies Ltd. System and method for flash memory management
US9501392B1 (en) 2011-05-12 2016-11-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of a non-volatile memory module
US9110785B1 (en) 2011-05-12 2015-08-18 Densbits Technologies Ltd. Ordered merge of data sectors that belong to memory space portions
US9372792B1 (en) 2011-05-12 2016-06-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US20120297256A1 (en) * 2011-05-20 2012-11-22 Qualcomm Incorporated Large Ram Cache
US8719648B2 (en) 2011-07-27 2014-05-06 International Business Machines Corporation Interleaving of memory repair data compression and fuse programming operations in single fusebay architecture
US8467260B2 (en) 2011-08-05 2013-06-18 International Business Machines Corporation Structure and method for storing multiple repair pass data into a fusebay
US8484543B2 (en) 2011-08-08 2013-07-09 International Business Machines Corporation Fusebay controller structure, system, and method
JP2014522066A (ja) 2011-08-09 2014-08-28 エルエスアイ コーポレーション 入出力デバイスとコンピューティングホストとの相互運用
US20130042051A1 (en) * 2011-08-10 2013-02-14 Skymedi Corporation Program method for a non-volatile memory
US9098399B2 (en) 2011-08-31 2015-08-04 SMART Storage Systems, Inc. Electronic system with storage management mechanism and method of operation thereof
US8537627B2 (en) 2011-09-01 2013-09-17 International Business Machines Corporation Determining fusebay storage element usage
US9063844B2 (en) 2011-09-02 2015-06-23 SMART Storage Systems, Inc. Non-volatile memory management system with time measure mechanism and method of operation thereof
US9021319B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Non-volatile memory management system with load leveling and method of operation thereof
US9021231B2 (en) 2011-09-02 2015-04-28 SMART Storage Systems, Inc. Storage control system with write amplification control mechanism and method of operation thereof
US9477590B2 (en) * 2011-09-16 2016-10-25 Apple Inc. Weave sequence counter for non-volatile memory systems
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system
US8949517B2 (en) 2011-10-05 2015-02-03 Lsi Corporation Self-journaling and hierarchical consistency for non-volatile storage
TWI454911B (zh) * 2011-10-12 2014-10-01 Phison Electronics Corp 資料寫入方法、記憶體控制器與記憶體儲存裝置
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
KR101893145B1 (ko) 2011-12-06 2018-10-05 삼성전자주식회사 메모리 시스템들 및 그것들의 블록 복사 방법들
US8762627B2 (en) 2011-12-21 2014-06-24 Sandisk Technologies Inc. Memory logical defragmentation during garbage collection
US8843711B1 (en) * 2011-12-28 2014-09-23 Netapp, Inc. Partial write without read-modify
US8775722B2 (en) 2011-12-30 2014-07-08 Sandisk Technologies Inc. Storing data in parallel in a flash storage device using on chip page shifting between planes
US9329989B2 (en) * 2011-12-30 2016-05-03 SanDisk Technologies, Inc. System and method for pre-interleaving sequential data
US9239781B2 (en) 2012-02-07 2016-01-19 SMART Storage Systems, Inc. Storage control system with erase block mechanism and method of operation thereof
US8947941B2 (en) 2012-02-09 2015-02-03 Densbits Technologies Ltd. State responsive operations relating to flash memory cells
US8996788B2 (en) 2012-02-09 2015-03-31 Densbits Technologies Ltd. Configurable flash interface
US9298252B2 (en) 2012-04-17 2016-03-29 SMART Storage Systems, Inc. Storage control system with power down mechanism and method of operation thereof
US8996793B1 (en) 2012-04-24 2015-03-31 Densbits Technologies Ltd. System, method and computer readable medium for generating soft information
US8838937B1 (en) 2012-05-23 2014-09-16 Densbits Technologies Ltd. Methods, systems and computer readable medium for writing and reading data
US8879325B1 (en) 2012-05-30 2014-11-04 Densbits Technologies Ltd. System, method and computer program product for processing read threshold information and for reading a flash memory module
US8949689B2 (en) 2012-06-11 2015-02-03 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US9122581B2 (en) 2012-06-12 2015-09-01 International Business Machines Corporation Data versioning in solid state memory
US9135161B2 (en) 2012-06-12 2015-09-15 International Business Machines Corporation Flash translation layer system for maintaining data versions in solid state memory
US9116793B2 (en) 2012-06-12 2015-08-25 International Business Machines Corporation Maintaining versions of data in solid state memory
US9122582B2 (en) 2012-06-12 2015-09-01 International Business Machines Corporation File system for maintaining data versions in solid state memory
WO2014002160A1 (ja) * 2012-06-25 2014-01-03 富士通株式会社 ストレージ制御装置、ストレージ制御方法およびストレージ制御プログラム
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
US9699263B1 (en) 2012-08-17 2017-07-04 Sandisk Technologies Llc. Automatic read and write acceleration of data accessed by virtual machines
US9921954B1 (en) 2012-08-27 2018-03-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and system for split flash memory management between host and storage controller
US9368225B1 (en) 2012-11-21 2016-06-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Determining read thresholds based upon read error direction statistics
DE102012022728A1 (de) * 2012-11-21 2014-05-22 Unify Gmbh & Co. Kg Verfahren zur Steuerung eines Flash-Speichers zur Massenspeicherung, der von einem an einen Host anschließbaren Kommunikationsgerät umfasst ist, und Computerprogrammprodukt zur Ausführung des Verfahrens
CN103001863B (zh) * 2012-11-27 2015-09-09 中国科学院声学研究所 数据包快速复制方法、数据包读取方法
US9047172B2 (en) 2012-11-29 2015-06-02 Intel Corporation Adaptive power control of memory map storage devices
US9671962B2 (en) 2012-11-30 2017-06-06 Sandisk Technologies Llc Storage control system with data management mechanism of parity and method of operation thereof
US9195584B2 (en) 2012-12-10 2015-11-24 Sandisk Technologies Inc. Dynamic block linking with individually configured plane parameters
US9612948B2 (en) 2012-12-27 2017-04-04 Sandisk Technologies Llc Reads and writes between a contiguous data block and noncontiguous sets of logical address blocks in a persistent storage device
US9454420B1 (en) 2012-12-31 2016-09-27 Sandisk Technologies Llc Method and system of reading threshold voltage equalization
US9069659B1 (en) 2013-01-03 2015-06-30 Densbits Technologies Ltd. Read threshold determination using reference read threshold
TWI497292B (zh) * 2013-01-09 2015-08-21 Memoright Corp A Method of Finding System Data Based on Index Block
US9076545B2 (en) 2013-01-17 2015-07-07 Sandisk Tecnologies Inc. Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
US9395924B2 (en) 2013-01-22 2016-07-19 Seagate Technology Llc Management of and region selection for writes to non-volatile memory
US9123445B2 (en) 2013-01-22 2015-09-01 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US8913428B2 (en) 2013-01-25 2014-12-16 Sandisk Technologies Inc. Programming non-volatile storage system with multiple memory die
US9026757B2 (en) * 2013-01-25 2015-05-05 Sandisk Technologies Inc. Non-volatile memory programming data preservation
US9214965B2 (en) 2013-02-20 2015-12-15 Sandisk Enterprise Ip Llc Method and system for improving data integrity in non-volatile storage
US9329928B2 (en) 2013-02-20 2016-05-03 Sandisk Enterprise IP LLC. Bandwidth optimization in a non-volatile memory system
US9183137B2 (en) 2013-02-27 2015-11-10 SMART Storage Systems, Inc. Storage control system with data management mechanism and method of operation thereof
US8972776B2 (en) 2013-03-06 2015-03-03 Seagate Technology, Llc Partial R-block recycling
US9470720B2 (en) 2013-03-08 2016-10-18 Sandisk Technologies Llc Test system with localized heating and method of manufacture thereof
US9870830B1 (en) 2013-03-14 2018-01-16 Sandisk Technologies Llc Optimal multilevel sensing for reading data from a storage medium
US9478271B2 (en) * 2013-03-14 2016-10-25 Seagate Technology Llc Nonvolatile memory data recovery after power failure
US9465732B2 (en) 2013-03-15 2016-10-11 Sandisk Technologies Llc Binning of blocks for dynamic linking
US9037902B2 (en) 2013-03-15 2015-05-19 Sandisk Technologies Inc. Flash memory techniques for recovering from write interrupt resulting from voltage fault
US9043780B2 (en) 2013-03-27 2015-05-26 SMART Storage Systems, Inc. Electronic system with system modification control mechanism and method of operation thereof
US10049037B2 (en) 2013-04-05 2018-08-14 Sandisk Enterprise Ip Llc Data management in a storage system
US9170941B2 (en) 2013-04-05 2015-10-27 Sandisk Enterprises IP LLC Data hardening in a storage system
US9543025B2 (en) 2013-04-11 2017-01-10 Sandisk Technologies Llc Storage control system with power-off time estimation mechanism and method of operation thereof
US10546648B2 (en) 2013-04-12 2020-01-28 Sandisk Technologies Llc Storage control system with data management mechanism and method of operation thereof
CN104103309B (zh) * 2013-04-15 2017-11-17 旺宏电子股份有限公司 Nand阵列的操作方法及计算机可读取的非暂时性储存媒体
US9213633B2 (en) 2013-04-30 2015-12-15 Seagate Technology Llc Flash translation layer with lower write amplification
US9136876B1 (en) 2013-06-13 2015-09-15 Densbits Technologies Ltd. Size limited multi-dimensional decoding
US9313874B2 (en) 2013-06-19 2016-04-12 SMART Storage Systems, Inc. Electronic system with heat extraction and method of manufacture thereof
US9898056B2 (en) 2013-06-19 2018-02-20 Sandisk Technologies Llc Electronic assembly with thermal channel and method of manufacture thereof
US9367353B1 (en) 2013-06-25 2016-06-14 Sandisk Technologies Inc. Storage control system with power throttling mechanism and method of operation thereof
US9244519B1 (en) 2013-06-25 2016-01-26 Smart Storage Systems. Inc. Storage system with data transfer rate adjustment for power throttling
WO2015008358A1 (ja) * 2013-07-18 2015-01-22 株式会社日立製作所 情報処理装置
US9524235B1 (en) 2013-07-25 2016-12-20 Sandisk Technologies Llc Local hash value generation in non-volatile data storage systems
US9146850B2 (en) 2013-08-01 2015-09-29 SMART Storage Systems, Inc. Data storage system with dynamic read threshold mechanism and method of operation thereof
US9431113B2 (en) 2013-08-07 2016-08-30 Sandisk Technologies Llc Data storage system with dynamic erase block grouping mechanism and method of operation thereof
US9448946B2 (en) 2013-08-07 2016-09-20 Sandisk Technologies Llc Data storage system with stale data mechanism and method of operation thereof
US9361222B2 (en) 2013-08-07 2016-06-07 SMART Storage Systems, Inc. Electronic system with storage drive life estimation mechanism and method of operation thereof
US9639463B1 (en) 2013-08-26 2017-05-02 Sandisk Technologies Llc Heuristic aware garbage collection scheme in storage systems
US9413491B1 (en) 2013-10-08 2016-08-09 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for multiple dimension decoding and encoding a message
US9786388B1 (en) 2013-10-09 2017-10-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9397706B1 (en) 2013-10-09 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for irregular multiple dimension decoding and encoding
US9348694B1 (en) 2013-10-09 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9442662B2 (en) 2013-10-18 2016-09-13 Sandisk Technologies Llc Device and method for managing die groups
US9436831B2 (en) 2013-10-30 2016-09-06 Sandisk Technologies Llc Secure erase in a memory device
US9152555B2 (en) 2013-11-15 2015-10-06 Sandisk Enterprise IP LLC. Data management with modular erase in a data storage system
US9703816B2 (en) 2013-11-19 2017-07-11 Sandisk Technologies Llc Method and system for forward reference logging in a persistent datastore
US9612773B2 (en) * 2013-11-21 2017-04-04 Samsung Electronics Co., Ltd. User device having a host flash translation layer (FTL), a method for transferring an erase count thereof, a method for transferring reprogram information thereof, and a method for transferring a page offset of an open block thereof
US9520197B2 (en) 2013-11-22 2016-12-13 Sandisk Technologies Llc Adaptive erase of a storage device
US9520162B2 (en) 2013-11-27 2016-12-13 Sandisk Technologies Llc DIMM device controller supervisor
US9582058B2 (en) 2013-11-29 2017-02-28 Sandisk Technologies Llc Power inrush management of storage devices
US9329992B2 (en) * 2013-12-04 2016-05-03 Silicon Motion, Inc. Data storage device and flash memory control method
US9236133B2 (en) * 2013-12-13 2016-01-12 Micron Technology, Inc. Adjusted read for partially programmed block
KR102116258B1 (ko) * 2013-12-24 2020-06-05 삼성전자주식회사 메모리 시스템 및 그것을 포함하는 유저 장치
US9536612B1 (en) 2014-01-23 2017-01-03 Avago Technologies General Ip (Singapore) Pte. Ltd Digital signaling processing for three dimensional flash memory arrays
US10120792B1 (en) 2014-01-29 2018-11-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Programming an embedded flash storage device
KR102195298B1 (ko) 2014-02-13 2020-12-24 삼성전자주식회사 비휘발성 메모리 장치의 부분 페이지 프로그램 방법
US9703636B2 (en) 2014-03-01 2017-07-11 Sandisk Technologies Llc Firmware reversion trigger and control
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9454448B2 (en) 2014-03-19 2016-09-27 Sandisk Technologies Llc Fault testing in storage devices
US9448876B2 (en) 2014-03-19 2016-09-20 Sandisk Technologies Llc Fault detection and prediction in storage devices
JP6260395B2 (ja) * 2014-03-27 2018-01-17 Tdk株式会社 メモリコントローラ、メモリシステム及びメモリ制御方法
US9626400B2 (en) 2014-03-31 2017-04-18 Sandisk Technologies Llc Compaction of information in tiered data structure
US9626399B2 (en) 2014-03-31 2017-04-18 Sandisk Technologies Llc Conditional updates for reducing frequency of data modification operations
US9697267B2 (en) 2014-04-03 2017-07-04 Sandisk Technologies Llc Methods and systems for performing efficient snapshots in tiered data structures
US9542262B1 (en) 2014-05-29 2017-01-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Error correction
US10656840B2 (en) 2014-05-30 2020-05-19 Sandisk Technologies Llc Real-time I/O pattern recognition to enhance performance and endurance of a storage device
US10372613B2 (en) 2014-05-30 2019-08-06 Sandisk Technologies Llc Using sub-region I/O history to cache repeatedly accessed sub-regions in a non-volatile storage device
US10162748B2 (en) 2014-05-30 2018-12-25 Sandisk Technologies Llc Prioritizing garbage collection and block allocation based on I/O history for logical address regions
US9703491B2 (en) 2014-05-30 2017-07-11 Sandisk Technologies Llc Using history of unaligned writes to cache data and avoid read-modify-writes in a non-volatile storage device
US10146448B2 (en) 2014-05-30 2018-12-04 Sandisk Technologies Llc Using history of I/O sequences to trigger cached read ahead in a non-volatile storage device
US10114557B2 (en) 2014-05-30 2018-10-30 Sandisk Technologies Llc Identification of hot regions to enhance performance and endurance of a non-volatile storage device
US10656842B2 (en) 2014-05-30 2020-05-19 Sandisk Technologies Llc Using history of I/O sizes and I/O sequences to trigger coalesced writes in a non-volatile storage device
US9652381B2 (en) 2014-06-19 2017-05-16 Sandisk Technologies Llc Sub-block garbage collection
KR102292172B1 (ko) * 2014-06-23 2021-08-25 삼성전자주식회사 불휘발성 메모리 장치 및 메모리 컨트롤러의 동작 방법
US9892033B1 (en) 2014-06-24 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of memory units
US9584159B1 (en) 2014-07-03 2017-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Interleaved encoding
US9972393B1 (en) 2014-07-03 2018-05-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Accelerating programming of a flash memory module
US9449702B1 (en) 2014-07-08 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Power management
US9443601B2 (en) 2014-09-08 2016-09-13 Sandisk Technologies Llc Holdup capacitor energy harvesting
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9524211B1 (en) 2014-11-18 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Codeword management
US9563504B2 (en) 2014-12-05 2017-02-07 Sandisk Technologies Llc Partial block erase for data refreshing and open-block programming
US10305515B1 (en) 2015-02-02 2019-05-28 Avago Technologies International Sales Pte. Limited System and method for encoding using multiple linear feedback shift registers
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9594623B2 (en) 2015-03-24 2017-03-14 Nxp Usa, Inc. System on chip and method of updating program code on a system on chip
KR102291806B1 (ko) 2015-04-20 2021-08-24 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 동작 방법
US10628255B1 (en) 2015-06-11 2020-04-21 Avago Technologies International Sales Pte. Limited Multi-dimensional decoding
US9851921B1 (en) 2015-07-05 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory chip processing
KR20170011645A (ko) * 2015-07-23 2017-02-02 에스케이하이닉스 주식회사 반도체 메모리 장치를 포함하는 메모리 시스템 및 그것의 동작 방법
KR102491624B1 (ko) * 2015-07-27 2023-01-25 삼성전자주식회사 데이터 저장 장치의 작동 방법과 상기 데이터 저장 장치를 포함하는 시스템의 작동 방법
TWI601141B (zh) * 2015-08-21 2017-10-01 晨星半導體股份有限公司 快閃記憶體的存取方法及相關的記憶體控制器與電子裝置
CN106484630A (zh) * 2015-08-31 2017-03-08 晨星半导体股份有限公司 快闪存储器的存取方法及相关的存储器控制器与电子装置
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US10532481B2 (en) * 2015-11-25 2020-01-14 Ridge Tool Company Punch tool system
US9954558B1 (en) 2016-03-03 2018-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Fast decoding of data stored in a flash memory
TWI599880B (zh) 2016-03-22 2017-09-21 威盛電子股份有限公司 非揮發性記憶體裝置及其操作方法
TWI631463B (zh) 2016-03-22 2018-08-01 威盛電子股份有限公司 非揮發性記憶體裝置及其操作方法
US10031845B2 (en) 2016-04-01 2018-07-24 Intel Corporation Method and apparatus for processing sequential writes to a block group of physical blocks in a memory device
US10019198B2 (en) 2016-04-01 2018-07-10 Intel Corporation Method and apparatus for processing sequential writes to portions of an addressable unit
TWI604455B (zh) * 2016-05-13 2017-11-01 Silicon Motion Inc 資料儲存裝置、記憶體控制器及其資料管理方法與資料區塊管理方法
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US9881682B1 (en) 2016-11-23 2018-01-30 Seagate Technology Llc Fine grained data retention monitoring in solid state drives
FR3065303B1 (fr) * 2017-04-12 2019-06-07 Stmicroelectronics (Rousset) Sas Procede d'ecriture dans un dispositif de memoire non volatile et dispositif de memoire non volatile correspondant
US10115472B1 (en) 2017-08-02 2018-10-30 International Business Machines Corporation Reducing read disturb effect on partially programmed blocks of non-volatile memory
CN109407963A (zh) * 2017-08-15 2019-03-01 深圳市中兴微电子技术有限公司 一种实现存储管理的方法及装置
CN107919110A (zh) * 2017-11-27 2018-04-17 哈尔滨理工大学 一种针对乐谱的译码方式
US10529435B2 (en) * 2018-01-05 2020-01-07 Sandisk Technologies Llc Fast detection of defective memory block to prevent neighbor plane disturb
EP3685271A4 (en) * 2018-01-29 2021-05-12 Hewlett-Packard Development Company, L.P. VALIDITY OF RECORDS STORED IN MEMORY
KR20190120966A (ko) * 2018-04-17 2019-10-25 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
CN110489052B (zh) * 2018-05-14 2022-11-25 慧荣科技股份有限公司 数据储存装置
KR102530327B1 (ko) 2018-06-01 2023-05-08 삼성전자주식회사 비휘발성 메모리 장치 및 그 동작 방법
US11055226B2 (en) * 2018-06-29 2021-07-06 Intel Corporation Mitigation of cache-latency based side-channel attacks
US10733027B2 (en) * 2018-10-07 2020-08-04 Hewlett Packard Enterprise Development Lp Memory allocator
KR20210014337A (ko) 2019-07-30 2021-02-09 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US11347404B2 (en) * 2019-08-01 2022-05-31 EMC IP Holding Company, LLC System and method for sharing spare storage capacity between a log structured file system and RAID
US11287989B2 (en) 2020-03-24 2022-03-29 Western Digital Technologies, Inc. Dynamic allocation of sub blocks
US11721397B2 (en) 2020-12-28 2023-08-08 Sandisk Technologies Llc Power saving and fast read sequence for non-volatile memory
JP2022147448A (ja) * 2021-03-23 2022-10-06 キオクシア株式会社 メモリシステム及びデータ管理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5598370A (en) * 1993-02-24 1997-01-28 International Business Machines Corporation Nonvolatile memory with cluster-erase flash capability and solid state file apparatus using the same
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
CN1238846A (zh) * 1996-09-30 1999-12-15 英特尔公司 对非易失性存储器中的文件进行连续重写的方法

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833603A (en) 1986-05-30 1989-05-23 Bull Hn Information Systems Inc. Apparatus and method for implementation of a page frame replacement algorithm in a data processing system having virtual memory addressing
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5012132A (en) 1989-10-05 1991-04-30 Xicor, Inc. Dual mode high voltage coupler
GB2251324B (en) 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
US5663901A (en) 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
JP2618149B2 (ja) * 1991-04-22 1997-06-11 インターナショナル・ビジネス・マシーンズ・コーポレイション キャッシュ内のデータ記憶スペースを管理する方法及びキャッシュ内でページ置換を行う装置
US6347051B2 (en) * 1991-11-26 2002-02-12 Hitachi, Ltd. Storage device employing a flash memory
JPH05233426A (ja) * 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
US5375222A (en) 1992-03-31 1994-12-20 Intel Corporation Flash memory card with a ready/busy mask register
US5822781A (en) 1992-10-30 1998-10-13 Intel Corporation Sector-based storage device emulator having variable-sized sector
US5341330A (en) 1992-10-30 1994-08-23 Intel Corporation Method for writing to a flash memory array during erase suspend intervals
US5649200A (en) * 1993-01-08 1997-07-15 Atria Software, Inc. Dynamic rule-based version control system
EP0612039B1 (en) * 1993-02-15 1999-10-27 Babcock-Hitachi Kabushiki Kaisha Method and system of preventive maintenance for plant component parts
US5404485A (en) 1993-03-08 1995-04-04 M-Systems Flash Disk Pioneers Ltd. Flash file system
US5519843A (en) 1993-03-15 1996-05-21 M-Systems Flash memory system providing both BIOS and user storage capability
US5485595A (en) 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
US5388083A (en) 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US6078520A (en) * 1993-04-08 2000-06-20 Hitachi, Ltd. Flash memory control method and information processing system therewith
JP3215237B2 (ja) 1993-10-01 2001-10-02 富士通株式会社 記憶装置および記憶装置の書き込み/消去方法
JPH08212019A (ja) 1995-01-31 1996-08-20 Mitsubishi Electric Corp 半導体ディスク装置
JP3706167B2 (ja) 1995-02-16 2005-10-12 株式会社ルネサステクノロジ 半導体ディスク装置
JPH08263361A (ja) 1995-03-23 1996-10-11 Mitsubishi Electric Corp フラッシュメモリカード
US5682499A (en) 1995-06-06 1997-10-28 International Business Machines Corporation Directory rebuild method and apparatus for maintaining and rebuilding directory information for compressed data on direct access storage device (DASD)
US6081878A (en) 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5907856A (en) 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US6125435A (en) 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5835935A (en) 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
US5860090A (en) * 1995-10-20 1999-01-12 Informix Software, Inc. Append-only storage in a disk array using striping and parity caching
US5987478A (en) * 1995-10-31 1999-11-16 Intel Corporation Virtual small block file manager for flash memory array
FR2742893B1 (fr) 1995-12-20 1998-01-16 Schlumberger Ind Sa Procede d'inscription d'une donnee dans une memoire reinscriptible
GB9609833D0 (en) 1996-05-10 1996-07-17 Memory Corp Plc Memory device
US5896393A (en) 1996-05-23 1999-04-20 Advanced Micro Devices, Inc. Simplified file management scheme for flash memory
JP4462646B2 (ja) 1996-06-28 2010-05-12 ソニー株式会社 情報処理装置および情報処理方法、リーダ/ライタおよびアクセス方法、並びに記録媒体
JPH1091490A (ja) 1996-09-12 1998-04-10 Sanyo Electric Co Ltd フラッシュメモリを利用した記憶装置
US5890192A (en) 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
JPH10177797A (ja) 1996-12-17 1998-06-30 Toshiba Corp 半導体記憶装置
JP3895816B2 (ja) 1996-12-25 2007-03-22 株式会社東芝 不揮発性半導体記憶装置とその制御方法、メモリカード、及び記憶システム
US5924092A (en) 1997-02-07 1999-07-13 International Business Machines Corporation Computer system and method which sort array elements to optimize array modifications
US6034897A (en) 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6122195A (en) 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US5999947A (en) * 1997-05-27 1999-12-07 Arkona, Llc Distributing database differences corresponding to database change events made to a database table located on a server computer
JP3721725B2 (ja) 1997-07-09 2005-11-30 ソニー株式会社 情報処理方法および情報処理装置
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
JP4079506B2 (ja) 1997-08-08 2008-04-23 株式会社東芝 不揮発性半導体メモリシステムの制御方法
JPH1153235A (ja) 1997-08-08 1999-02-26 Toshiba Corp ディスク記憶装置のデータ更新方法、ならびにディスク記憶制御システム
JP2914360B2 (ja) * 1997-09-30 1999-06-28 ソニー株式会社 外部記憶装置及びデータ処理方法
JP3119214B2 (ja) * 1997-09-30 2000-12-18 ソニー株式会社 記憶装置、データ処理システム並びにデータの書き込み及び読み出し方法
JP3640154B2 (ja) 1997-09-30 2005-04-20 ソニー株式会社 不揮発性メモリ、不揮発性メモリの管理方法、不揮発性メモリを有する記憶装置、不揮発性メモリを管理するデータ管理装置及びデータ処理システム
JP3070539B2 (ja) 1997-09-30 2000-07-31 ソニー株式会社 外部記憶装置、データ処理装置及びデータ処理方法
US5937425A (en) 1997-10-16 1999-08-10 M-Systems Flash Disk Pioneers Ltd. Flash file system optimized for page-mode flash technologies
US6040997A (en) 1998-03-25 2000-03-21 Lexar Media, Inc. Flash memory leveling architecture having no external latch
US6226728B1 (en) * 1998-04-21 2001-05-01 Intel Corporation Dynamic allocation for efficient management of variable sized data within a nonvolatile memory
JP4085478B2 (ja) 1998-07-28 2008-05-14 ソニー株式会社 記憶媒体及び電子機器システム
GB9903490D0 (en) 1999-02-17 1999-04-07 Memory Corp Plc Memory system
US6715068B1 (en) * 1999-03-31 2004-03-30 Fuji Photo Optical Co., Ltd. Multi-microcomputer system
DE60030876T2 (de) 1999-04-01 2007-05-03 Lexar Media, Inc., Fremont Bereichsverwaltung eines nichtflüchtigen Speichers mit hoher Kapazität
US6449625B1 (en) * 1999-04-20 2002-09-10 Lucent Technologies Inc. Use of a two-way stack approach to optimize flash memory management for embedded database systems
US6288862B1 (en) 1999-07-30 2001-09-11 Storage Technology Corporation Method and mechanism to distinguish valid from outdated recording blocks in a tape drive
FR2803080A1 (fr) 1999-12-22 2001-06-29 St Microelectronics Sa Memoire flash programmable page par page
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
JP3992960B2 (ja) * 2000-10-26 2007-10-17 松下電器産業株式会社 記録装置及びプログラム
US6684289B1 (en) * 2000-11-22 2004-01-27 Sandisk Corporation Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
US6529416B2 (en) * 2000-11-30 2003-03-04 Bitmicro Networks, Inc. Parallel erase operations in memory systems
US7020739B2 (en) * 2000-12-06 2006-03-28 Tdk Corporation Memory controller, flash memory system having memory controller and method for controlling flash memory device
IT1315566B1 (it) 2000-12-12 2003-02-18 Federico Renier Metodo per la certificazione dell'invio,della ricezione edell'autenticita' di documenti elettronici ed unita' di rete
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US6835311B2 (en) 2002-01-31 2004-12-28 Koslow Technologies Corporation Microporous filter media, filtration systems containing same, and methods of making and using

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5598370A (en) * 1993-02-24 1997-01-28 International Business Machines Corporation Nonvolatile memory with cluster-erase flash capability and solid state file apparatus using the same
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
CN1238846A (zh) * 1996-09-30 1999-12-15 英特尔公司 对非易失性存储器中的文件进行连续重写的方法

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