CN100485862C - Exposure apparatus, exposure method, and method for producing device - Google Patents

Abstract

An exposure apparatus (EX) includes a substrate stage (PST) movable while holding a substrate (P), a substrate alignment system (5) which detects an alignment mark (1) on the substrate (P) held by the substrate stage (PST) and detects a reference mark (PFM) provided on the substrate stage (PST), and a mask alignment system (6) which detects, via a projection optical system (PL), a reference mark (MFM) provided on the substrate stage (PST). The reference mark (PFM) on the substrate stage (PST) is detected without a liquid by using the substrate alignment system (5), and the reference mark (MFM) on the substrate stage (PST) is detected using the mask alignment system (6) via the projection optical system (PL) and the liquid. Then, a positional relationship between a detection reference position of the substrate alignment system (5) and a projection position of an image of a pattern is obtained, thereby accurately performing alignment processing in the liquid immersion exposure.

Description

Exposure device and exposure method and device making method

Technical field

The present invention relates to exposure device and the exposure method and the device making method of exposing patterns on substrate via projection optical system and liquid.

Background technology

Micro element such as semiconductor device and liquid crystal display device is made to photosensitive on-chip, so-called photolithographic method by the pattern transfer that will be formed on the mask.Employed exposure device has the mask platform of supporting mask and the chip bench of support substrate in this photoetching process operation, and meanwhile mobile one by one mask platform and chip bench via projection optical system with the pattern transfer of mask to substrate.

Owing to above-mentioned micro element is to overlap multilayer pattern to form on substrate, so with the pattern below the 2nd layer when carrying out projection exposure on the substrate, accurately carry out will be formed on on-chip pattern, the registration process of the pattern image contraposition (position adjustments) of the mask of exposure is just very important with next.As alignment so have use projection optical system serve as a mark detection system a part so-called TTL mode and do not use the what is called of mark detecting system of special use from axle (off-axis) mode via projection optical system ground.These modes are not mask and substrate are directly carried out contraposition but to carry out contraposition indirectly via being arranged on the reference mark that (generally is) on chip bench in the exposure device.Wherein, at the baseline that carries out instrumentation baseline amount (information) in the axle mode (base line) instrumentation, this baseline amount is the distance (position relation) of projected position of the pattern image of the detection reference position of mark detecting system of the above-mentioned special use in the coordinate system that moves of regulation chip bench and mask.Then when substrate is overlapped exposure, for example will be formed on and detect with mark detecting system as the alignment mark on the shooting area in on-chip exposure object zone, to find the solution the positional information (skew) of shooting area with respect to the detection reference position of mark detecting system, and corresponding the moving of side-play amount by shooting area that chip bench is obtained by above-mentioned baseline amount and with mark detecting system from the position of the chip bench of this moment, projected position and this shooting area of the pattern image of mask are carried out contraposition, and under this state, expose.So, the pattern that has been formed on substrate (shooting area) is overlapped with the pattern image of next mask.

, in recent years, for the further highly integrated people that adapt to device pattern wish the further high-resolutionization of projection optical system.The resolution (resolution) of the big more then projection optical system of numerical aperture of the short more or projection optical system of the exposure wavelength that uses is just high more.For this reason, the employed exposure wavelength of exposure device is the short wavelengthization year by year, and the numerical aperture of projection optical system also constantly increases.And though the exposure wavelength of main flow is the 248nm of KrF exciplex laser now, more the 193nm of short wavelength's ArF exciplex laser also just constantly is practical.In addition, when exposing, the depth of focus (DOF) also with the resolution no less important.Resolution R and depth of focus δ represent with following formula respectively.

R＝k1·λ/NA ...(1)

δ＝±k2·λ/NA ² ...(2)

Here, λ is an exposure wavelength, and NA is the numerical aperture of projection optical system, and k1, k2 are processing coefficients (process coefficient).As can be known in order to improve resolution R, depth of focus δ will become narrow if make exposure wavelength lambda shorten, make numerical aperture NA to become greatly then according to (1) formula, (2) formula.

If the too narrow substrate surface that makes of depth of focus δ is with respect to the identical difficulty that will become of the image planes of projection optical system, the tolerance limit during exposure actions (margin) probably will be not enough.Thereby the method as shortening the exposure wavelength and the expansion depth of focus has in fact for example proposed No. 99/49504 disclosed immersion method of communique of international publication (liquid immersion method).This immersion method is that liquid such as water or organic solvent is full of below projection optical system and between the substrate surface, utilizing the exposure light wavelength in the liquid is that this fact of airborne 1/n (n is that liquid refractive index is generally about 1.2～1.6) is improved resolution, simultaneously the depth of focus is enlarged the doubly such method of about n.

; it is certain also very important in immersion exposure is handled the pattern image of mask and on-chip each shooting area accurately to be carried out contraposition, and it is just very important accurately to carry out baseline instrumentation and registration process under the situation of the contraposition of pattern image of carrying out mask as described above via reference mark indirectly and substrate.

In addition, on chip bench around not only the configuration baseline mark also dispose various transducers etc., when using them, need to do one's utmost to avoid the leakage and the immersion of liquid.In addition, owing to immerse the possibility that liquid also has the trouble of producing, immerse so just be necessary to prevent liquid in the inside of chip bench.

Summary of the invention

The present invention finishes in view of such situation, and purpose provides a kind of exposure device and exposure method that can suppress the leakage and the immersion of liquid.In addition, to provide a kind of exposure device and exposure method that in immersion exposure, also can accurately carry out registration process to be its purpose.And then, use the device making method of these exposure devices and use the device making method of these exposure methods to be its purpose to provide a kind of.

In order to solve above-mentioned problem, the present invention adopts the following formation corresponding with Fig. 1～Figure 14 shown in the execution mode.Wherein, be additional to the example of the parenthesized symbol of each key element, rather than each key element is limited nothing but this key element.

According to the 1st technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device (EX) of the substrate that exposes on the substrate (P) via liquid (LQ), possess: pattern image is projected to projection optical system (PL) on the substrate (P); Keep substrate (P) and transportable chip bench (PST); Detect the alignment mark (1) on the substrate (P) that is kept on the chip bench (PST), and detect the 1st detection system (5) of the benchmark (PFM) that is set at chip bench (PST); And the 2nd detection system (6) that detects the benchmark (MFM) that is set at chip bench (PST) via projection optical system (PL), wherein, use the 1st detection system (1) not detect the benchmark (PFM) that is set at chip bench (PST) via liquid (LQ), and use the 2nd detection system (6) to detect the benchmark (MFM) that is set at chip bench (PST), concern with position, the detection reference position of obtaining the 1st detection system (5) with the projected position of pattern image via projection optical system (PL) and liquid (LQ).

According to the present invention, when the benchmark that detects with the 1st detection system on the chip bench by just not detecting well detection reference and the not influences such as variations in temperature of liquid body via liquid ground.In addition, need not constitute the 1st detection system in the mode that is fit to immersion liquid, utilization detection system in the past can remain untouched.And, when the benchmark that uses on the 2nd detection system detection chip bench, same during with immersion exposure, by detecting at the image planes side full of liquid of projection optical system and via projection optical system and liquid, just can be based on this testing result projected position of check pattern picture accurately.And, can be based on the chip bench positional information separately in the detection action of these the 1st, the 2nd detection systems, accurately obtain baseline amount (baseline information) as the position relation (distance) of the projected position of the detection reference position of the 1st detection system and pattern image, based on this baseline amount, the also pattern image of contraposition substrate (shooting area) and mask accurately when carrying out at the coincidence of substrate exposure.

According to the 2nd technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device (EX) of substrate (P) that expose on the substrate (P) via liquid (LQ), possess: the projection optical system (PL) that pattern image is projected to (P) on the substrate; Substrate frame (52) with maintenance substrate (P) goes up maintenance substrate (P) and transportable chip bench (PST) in substrate frame (52); Detect the 1st detection system (5) of the alignment mark (1) on the substrate (P) that is kept on the chip bench (PST); And the 2nd detection system (6) that detects the benchmark (MFM) that is set at chip bench (PST) via liquid (LQ), wherein, when using the 2nd detection system (6) to detect the benchmark (MFM) that is set at chip bench (PST), on substrate frame (52), dispose substrate (P) or illusory substrate (DP) via liquid (LQ).

According to the present invention,, just can prevent that by the good substrate of configured in advance on substrate frame or illusory (Dummy) substrate a large amount of liquid is immersed in the inner and chip bench inside of substrate frame even if under the state that has disposed liquid on the benchmark, detect.Thereby, just can prevent to result from the generation of trouble such as get rusty of each parts of the fault of for example electric equipment of chip bench inside of the liquid that immerses and electric leakage or chip bench inside.

According to the 3rd technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device of the above-mentioned substrate that exposes on the substrate (P) via liquid (LQ), possess: pattern image is projected to projection optical system (PL) on the substrate (P); The reference component (3) that does not have difference in height above; And at the end face (2a) of above-mentioned projection optical system (PL) and between above the said reference parts (3) with under the instinct state of liquid, detect the detection system (6) that is formed on the benchmark (MFM) on the said reference parts (3).

According to the present invention, there is not difference in height above the reference component owing to make, so even if when for example switching to moisture state from drying regime, the reference mark part (difference in height part) on reference component also is difficult to residual bubble.In addition, even if when switching to drying regime from moisture state, the residual of the liquid of mark part also prevented.Thereby, can also prevent washmarking (the so-called watermark: generation water mark) on the reference component.

According to the 4th technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device (EX) of substrate (P) that expose on the substrate (P) via liquid (LQ), possess: pattern image is projected to projection optical system (PL) on the substrate (P); Substrate frame (PSH) with maintenance substrate (P) goes up maintenance substrate (P) and transportable chip bench (PST) in substrate frame (PSH); Whether detection is keeping the detector (94) of substrate (P) or illusory substrate (DP) on substrate frame (PSH); And the control device (CONT) that changes the movable area of chip bench (PST) according to the testing result of detector (94).

According to the present invention, because according on substrate frame, whether keeping substrate or illusory substrate to decide the movable area of chip bench, so just can prevent the inside that liquid is immersed in chip bench attached to the maintenance face or the liquid of substrate frame.

According to the 5th technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device (EX) of substrate (P) that expose on the substrate (P) via liquid (LQ), possess: pattern image is projected to projection optical system (PL) on the substrate (P); Substrate frame (PSH) with maintenance substrate (P) goes up maintenance substrate (P) and transportable chip bench (PST) in substrate frame (PSH); The liquid feed mechanism (10) of feed fluid (LQ); Whether detection is keeping the detector (94) of substrate (P) or illusory substrate (DP) on substrate frame (PSH); And the control device (CONT) that comes the action of controlling liquid feed mechanism (10) based on the testing result of detector (94).

According to the present invention, because according to the action that on substrate frame, whether is keeping substrate or illusory substrate to come the controlling liquid feed mechanism, so just can prevent the inside that liquid is immersed in chip bench attached to the maintenance face or the liquid of substrate frame.

According to the 6th technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device (EX) of substrate (P) that expose on the substrate (P) via liquid (LQ), possess: pattern image is projected to projection optical system (PL) on the substrate (P); Substrate frame (PSH) with maintenance substrate (P) goes up maintenance substrate (P) and transportable chip bench (PST) in substrate frame (PSH); And so long as on substrate frame (PSH), keeping the situation of substrate (P) or illusory substrate (DP) just to go up the liquid feed mechanism (10) of feed fluid (LQ) at chip bench (PST).

According to the present invention, because so long as keeping the situation of substrate or illusory substrate on substrate frame, the liquid feed mechanism is feed fluid on chip bench just, is immersed in chip bench inside so just can prevent liquid attached to the maintenance face or the liquid of substrate frame.

According to the 7th technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device (EX) of the above-mentioned substrate that exposes on the substrate (P) via liquid (LQ), possess: pattern image is projected to on-chip projection optical system (PL); Keep above-mentioned substrate and transportable chip bench (PST); And so long as on above-mentioned chip bench (PST), keeping the situation of substrate (P) or illusory substrate (DP) just on above-mentioned chip bench, to form the immersion liquid mechanism (10) in immersion liquid zone.

According to the exposure device of the 7th technical scheme, because under the situation that does not keep substrate or illusory substrate on the chip bench, immersion liquid mechanism does not form the immersion liquid zone on chip bench, so just prevented effectively that liquid from immersing chip bench inside.

According to the 8th technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device (EX) of the above-mentioned substrate that exposes on the substrate (P) via liquid (LQ), possess: pattern image is projected to projection optical system (PL) on the substrate (P); Have the recess (60) that is used to keep above-mentioned substrate and be configured in recess around, the chip bench (PST) of the par that the surface of the above-mentioned substrate that is kept with above-mentioned recess is roughly same; Configuration object (P, DP) in the recess (60) on above-mentioned chip bench (PST) is so long as above-mentioned body surface and above-mentioned par become roughly same situation formation immersion liquid zone on above-mentioned chip bench just.

According to the exposure device of the 8th technical scheme, do not accommodate object or object is not contained under the situation of recess reliably at the recess of chip bench, on chip bench, do not form the immersion liquid zone.In view of the above, just prevented effectively that liquid from immersing chip bench inside.

According to the 9th technical scheme of the present invention, provide a kind of by pattern image being projected to the exposure device (EX) of substrate (P) that expose on the substrate (P) via liquid (LQ), possess: pattern image is projected to projection optical system (PL) on the substrate (P); The transportable slide holder of image planes side (PST) in projection optical system (PL); Detect the alignment mark (1) on the substrate (P), and detect the 1st detection system (5) of the benchmark (PFM) that is set at slide holder (PST); And the 2nd detection system (6) that detects the benchmark (MFM) that is set at slide holder (PST) via projection optical system (PL), wherein, use the 1st detection system (5) not detect the benchmark (PFM) that is set at slide holder via liquid (LQ), and use the 2nd detection system (6) to detect the benchmark (MFM) that is set at slide holder, concern with position, the detection reference position of obtaining the 1st detection system (5) with the projected position of pattern image via projection optical system (PL) and liquid (LQ).

According to the 9th technical scheme of the present invention, just substrate (shooting area) and pattern image accurately can be carried out contraposition.

According to the 10th technical scheme of the present invention, provide a kind of and pass through via projection optical system

(PL) and expose substrate (P) of the pattern image on liquid (LQ) the projection substrate (P)

Exposure method is characterized in that: use the 1st detection system (5) to detect on the substrate (P)

The positional information of alignment mark (1); Use the 1st detection system (5) to detect and keep substrate (P)

Chip bench (PST) on the positional information of benchmark (PFM); Utilizing the 1st detection system

Benchmark on the detection of the positional information of alignment mark (5) (1) and the chip bench (PST)

After the detection both sides of positional information (PFM) finish, use the 2nd detection system (6) warp

By the benchmark on projection optical system (PL) and liquid (LQ) the detection chip bench (PST)

(MFM); And based on the position of the alignment mark that utilizes the 1st detection system (5) (1)

The testing result of information, utilize the benchmark on the chip bench (PST) of the 1st detection system (5)

The testing result of positional information (PFM) and utilize the chip bench of the 2nd detection system (6)

The testing result of the positional information of the benchmark (PST) (MFM) is obtained the 1st and is detected system

The relation of the detection reference position of system (5) and the projected position of pattern image, and carry out pattern image

With the contraposition of substrate (P), (S1～S20) of a plurality of shooting areas on substrate (P) respectively

On successively projection pattern look like to expose.

According to this exposure method, because at first by not detecting the positional information that on-chip alignment mark is tried to achieve on-chip a plurality of shooting areas with the 1st detection system via liquid ground, then do not detect the benchmark on the chip bench and try to achieve its positional information via liquid ground, then by at the image planes side full of liquid of projection optical system and try to achieve the projected position of pattern image with the benchmark on the 2nd detection system detection chip bench via projection optical system and liquid, after the baseline amount of accurately obtaining as the position relation (distance) of the projected position of the detection reference position of the 1st detection system and pattern image, full of liquid and substrate carried out immersion exposure between projection optical system and substrate, so can reduce the image planes side of projection optical system not full of liquid drying regime and at the switching times of the moisture state of the image planes side full of liquid of projection optical system, can improve production capacity.In addition, since utilize continuously the 1st detection system benchmark detection action and utilize the detection action via the benchmark of projection optical system and liquid of the 2nd detection system, so the detected state change of the detected state just can avoid the detection action of the benchmark that utilizes the 2nd detection system time the during the trouble of baseline amount of concerning as the position of the projected position of the detection reference position of the 1st detection system and pattern image of instrumentation and so on greatly and accurately with respect to the detection action of the benchmark that utilizes the 1st detection system.And, when the benchmark that detects with the 1st detection system on the chip bench by just not detecting well detection reference and the not influences such as variations in temperature of liquid body via liquid ground.In addition, need not constitute the 1st detection system in the mode that is fit to immersion liquid, utilization detection system in the past can remain untouched.And, when the benchmark that uses on the 2nd detection system detection chip bench, same during with immersion exposure, by detecting at the image planes side full of liquid of projection optical system and via projection optical system and liquid, just can be based on this testing result projected position of check pattern picture accurately.And, can be based on the chip bench positional information separately in the detection action of these the 1st, the 2nd detection systems, accurately obtain baseline amount as the position relation (distance) of the projected position of the detection reference position of the 1st detection system and pattern image, based on this baseline amount, also can be when carrying out with the accurately contraposition of pattern image of substrate (shooting area) with mask for the coincidence exposure of substrate.

According to the 11st technical scheme of the present invention, provide a kind of, comprising: with the 1st detector (5) detection reference (MFM) be provided with the above-mentioned on-chip alignment mark that the chip bench (PST) of substrate frame (PSH) is kept by pattern image being projected to the exposure method of the above-mentioned substrate that exposes on the substrate (P) via liquid (LQ); Under the state that has disposed above-mentioned substrate (P) or illusory substrate (DP) on the above-mentioned substrate frame (PSH), detect said reference via liquid with the 2nd detector (6); And based on the testing result of the 1st and the 2nd detector (5,6) with substrate and pattern image contraposition, with the pattern image substrate that exposes.

According to exposure method according to the 11st technical scheme of the present invention, because when detecting the benchmark that is arranged at chip bench via liquid with the 2nd detector, dispose above-mentioned substrate or illusory substrate on substrate frame, chip bench is inner just to be prevented effectively so liquid immerses.

According to the 12nd technical scheme of the present invention, provide a kind of, may further comprise the steps: detect on above-mentioned substrate frame (PSH), whether to keep above-mentioned substrate (P) or illusory substrate (DP) by pattern image being projected to the exposure method of the above-mentioned substrate that exposes on the substrate that the substrate frame (PSH) of transportable chip bench (PST) kept via liquid; And the movable area of setting above-mentioned chip bench (PST) according to testing result.

According to exposure method according to the 12nd technical scheme of the present invention, do not keep under the situation of above-mentioned substrate or illusory substrate detecting at above-mentioned chip bench, setting for the movable area of chip bench for example, the immersion of liquid to chip bench inside is prevented from.

According to the 13rd technical scheme of the present invention, provide a kind of, may further comprise the steps: detect on above-mentioned chip bench (PST), whether to keep above-mentioned substrate (P) or illusory substrate (DP) by pattern image being projected to the exposure method of above-mentioned substrate (P) that expose on the substrate (P) that transportable chip bench (PST) kept via liquid; And judge whether on above-mentioned chip bench to form the immersion liquid zone according to testing result.

According to exposure method according to the 13rd technical scheme of the present invention, owing to do not keep under the situation of above-mentioned substrate or illusory substrate detecting at above-mentioned chip bench, for example the liquid on chip bench is supplied with and to be ended, so liquid must be to prevent to the immersion of chip bench inside.

In the present invention, provide a kind of so that be the device making method of feature with the exposure device of above-mentioned record.In addition in the present invention, provide a kind of so that be the device making method of feature with the exposure method of above-mentioned record.

According to the present invention, handle owing to carry out immersion exposure under the state that can accurately carry out contraposition, so can make the device that to bring into play desired performance at projected position and substrate (shooting area) with pattern image.In addition, the enough exposure devices that suppresses leak of liquid and immersion of energy are made the device of desired performance.

Description of drawings

Fig. 1 is the summary pie graph of an execution mode of expression exposure device of the present invention.

Fig. 2 is the summary pie graph of express liquid feed mechanism and liquids recovery mechanism.

Fig. 3 is the general view of express liquid feed mechanism and liquids recovery mechanism.

Fig. 4 is the plane graph of chip bench.

It (b) is the figure of expression reference component that Fig. 5 (a) reaches.

Fig. 6 is the flow chart of an execution mode of expression exposure method of the present invention.

Fig. 7 is the schematic diagram that expression relates to other execution modes of chip bench of the present invention.

Fig. 8 is the schematic diagram that expression relates to other execution modes of chip bench of the present invention.

Fig. 9 is the plane graph of an execution mode of the exposure device in the expression standby place that possesses illusory substrate.

It (b) is the schematic diagram that expression relates to other execution modes of chip bench of the present invention that Figure 10 (a) reaches.

It is the figure that is used to illustrate the motion track that relates to chip bench of the present invention that Figure 11 (a) reaches (b).

Figure 12 is the figure that is used to illustrate the motion track that relates to chip bench of the present invention.

It is the figure that is used to illustrate the action that relates to liquid feed mechanism of the present invention that Figure 13 (a) reaches (b).

Figure 14 is the flow chart of an example of the manufacturing process of expression semiconductor device.

Embodiment

Below, with reference to accompanying drawing on one side with regard to of the present invention exposure device describe on one side, but the present invention is not limited thereto.

Fig. 1 is the summary pie graph of an execution mode of expression exposure device of the present invention.In Fig. 1, exposure device EX possesses: the mask platform MST that supports mask M, the chip bench PST of support substrate P, the lamp optical system IL that the mask M that mask platform MST is supported with exposing beam EL throws light on, the substrate P that the pattern image of the mask M that will be thrown light on exposing beam EL is supported chip bench PST carries out the projection optical system PL of projection exposure, and the control device CONT that the action of exposure device EX integral body is summed up control.

The exposure device EX of present embodiment is for the exposure wavelength substance is shortened to improve resolution, make the substantive immersion exposure device of extensively having used immersion method that becomes of the depth of focus simultaneously, possess: in the liquid feed mechanism 10 of feed fluid LQ on the substrate P and the liquid LQ liquids recovery mechanism 20 on the recovery substrate P.On liquid LQ, use pure water in the present embodiment.Exposure device EX during the pattern image with mask M is transferred on the substrate P, forms immersion liquid zone (liquid immersion area) AR2 by means of liquid LQ at least a portion (partly) on the substrate P of the AR1 of view field that comprises projection optical system PL of supplying with from liquid feed mechanism 10 at least.Particularly, exposure device EX is full of liquid LQ between the surface (plane of exposure) of the optical element 2 of projection optical system PL leading section (end portion) and substrate P, and through liquid LQ between projection optical system PL and the substrate P and projection optical system PL thus the pattern image of mask M is projected on the substrate P, thus substrate P is exposed.

Here, in the present embodiment, with use as exposure device EX on one side with mask M and substrate P along go up in scanning direction (prescribed direction) different mutually direction (contrary direction) carry out with moved further on one side will be on mask M formed pattern exposure (what is called scans the stepping exposure device: situation scanning stepper) describes as example to the scanning exposure apparatus of substrate P.In the following description, the synchronous moving direction (scanning direction, prescribed direction) that is located at interior mask M of horizontal plane and substrate P is X-direction, being located at the interior direction with the X-direction quadrature of horizontal plane is Y direction (non-scanning direction), and establishing perpendicular to X-axis and the Y-axis direction consistent with the optical axis AX of projection optical system PL is Z-direction.In addition, will be made as θ X, θ Y and θ Z direction respectively around revolution (inclination) direction of X-axis, Y-axis and Z axle.In addition, said here " substrate " is included in the situation that has applied resist (resist) on the semiconductor wafer, and " mask " is included in the netting twine (reticle) that forms on the substrate through the equipment pattern of reduced projection.

Lamp optical system IL throws light on to the mask M that mask platform MST is supported with exposing beam EL, have exposure light source, make the illumination homogenization of the light beam that penetrates from exposure light source the optics integrator, to condenser, the relay lens system of carrying out optically focused from the exposing beam EL of optics integrator, will utilize exposing beam EL mask M on the field of illumination set the variable field of view aperture etc. of slit-shaped for.Thrown light on the exposing beam EL of the Illumination Distribution of homogeneous by lamp optical system IL in regulation field of illumination on the mask M.As the exposing beam EL that penetrates from lamp optical system IL, for example use to swash and penetrate light (wavelength 248nm) extreme ultraviolet light (DUV light) of etc.ing from the bright line (g line, h line, i line) of the ultra-violet (UV) band that mercury vapor lamp penetrates and KrF exciplex, or sharp light (wavelength 193nm) and the F of penetrating of ArF exciplex ₂Swash and penetrate light (wavelength 157nm) equal vacuum ultraviolet light (VUV light) etc.Use the ArF exciplex to swash in the present embodiment and penetrate light.As described above, the liquid LQ in the present embodiment is a pure water, also can see through even if exposing beam EL penetrates light for the ArF exciplex swashs.In addition, bright line of ultra-violet (UV) band (g line, h line, i line) and KrF exciplex swash the extreme ultraviolet light (DUV light) penetrate light (wavelength 248nm) etc. and also can see through pure water.

Mask platform MST keeps mask M and can move, can be in the plane perpendicular to the optical axis AX of projection optical system PL, promptly carry out 2 dimensions in the XY plane and move and can carry out small revolution along θ Z direction.Mask platform MST is driven by mask platform drive unit MSTD such as linear motors.Mask platform drive unit MSTD is controlled by control device CONT.Mask platform MST is provided with the moving lens 50 that moves with mask platform MST.In addition, relative with moving lens 50 position is provided with laser interferometer 51.Instrumentation is carried out in real time by laser interferometer 51 in the position and the angle of revolution of the 2 dimension directions of the mask M on the mask platform MST, and the instrumentation result is output to control device CONT.Control device CONT drives the location that mask platform drive unit MSTD carries out the mask M that mask platform MST supported by the instrumentation result based on laser interferometer 51.

Projection optical system PL carries out projection exposure with the pattern of mask M to substrate P with the projection multiplying power β of regulation, is made of a plurality of optical element that comprises the optical element (lens) 2 that is arranged at substrate P side leading section, and these used for optical elements lens barrels PK supports.In the present embodiment, projection optical system PL is that projection multiplying power β is for example 1/4 or 1/5 reduction system.In addition, projection optical system PL waits some in times system and the expansion system.In addition, projection optical system PL both can be the projection optical system that comprises the reflection-refraction type of reflecting element and refracting element, also can be the projection optical system that only comprises the reflection-type of reflecting element.In addition, be arranged to can dismounting (replacing) with respect to lens barrel PK for the optical element 2 of the projection optical system PL leading section of present embodiment.In addition, the optical element 2 of leading section exposes from lens barrel PK, and the liquid LQ of immersion liquid zone AR2 contacts with optical element 2.In view of the above, corrosion of the lens barrel PK that is made up of metal etc. must be to prevent.

Optical element 2 usefulness fluorites (fluorite) form.Because the compatibility of fluorite and pure water is higher, so liquid LQ is sticked on roughly whole faces of liquid contact surface 2a of optical element 2.Promptly, in the present embodiment owing to compatibility higher liquid (water) LQ of supply, so the adhesiveness of the liquid contact surface 2a of optical element 2 and liquid LQ is higher with the liquid contact surface 2a of optical element 2.Optical element 2 also can be the quartz (crystal) higher with the compatibility of water.Can also implement hydrophiling (lyophilyization) to the liquid contact surface 2a of optical element 2 in addition and handle, so that higher with the compatibility of liquid LQ.

In addition, exposure device EX has focus detection system 4.Focus detection system 4 has illuminating part 4a and light accepting part 4b, via liquid LQ light is detected from the tilted direction projection in substrate P surface (plane of exposure) by illuminating part 4a, accepts its reverberation at light accepting part 4b.The action of control device CONT control focus detection system 4, the light result that is subjected to based on light accepting part 4b detects the position on Z-direction (focal position) of substrate P surface with respect to the stipulated standard face simultaneously.In addition, by trying to achieve each focal position at a plurality of each points place in the substrate P surface, focus detection system 4 can also obtain the attitude of the incline direction of substrate P.In addition, as the formation of focus detection system 4, for example can use disclosed formation in the flat 8-37149 communique of Japan Patent Publication Laid-Open.In addition, focus detection system 4 can also be via the surface projection detection light of liquid ground to substrate P.

Chip bench PST keeps substrate P and can move, and possesses via substrate frame PSH to keep the Z slide holder 52 of substrate P and the XY slide holder 53 of support Z slide holder 52.XY slide holder 53 is supported on the pedestal 54.Chip bench PST is driven by chip bench drive unit PSTD such as linear motors.Chip bench drive unit PSTD is controlled by control device CONT.In addition, self-evidently also Z slide holder and XY slide holder can be provided with integratedly.By the XY slide holder 53 of drive substrate platform PST, control position on the XY direction of substrate P (with the image planes of the projection optical system PL position of parallel direction in fact).

Chip bench PST (Z slide holder 52) is provided with the moving lens 55 that moves with respect to projection optical system PL with chip bench PST.In addition, be provided with laser interferometer 56 in the position relative with moving lens 55.Instrumentation is carried out in real time by laser interferometer 56 in the position and the angle of revolution of the 2 dimension directions of the substrate P on the chip bench PST, and the instrumentation result is output to control device CONT.Control device CONT is based on the instrumentation result of laser interferometer 56, in with the 2 dimension coordinates system of laser interferometer 56 defineds,, carry out the X-direction of the substrate P that chip bench PST supported and the location on the Y direction thus via chip bench drive unit PSTD driving XY slide holder 53.

In addition, control device CONT is by via the Z slide holder 52 of chip bench drive unit PSTD drive substrate platform PST, controls the position on position (focal position) on the Z-direction of the substrate P that Z slide holder 52 kept and θ X, the θ Y direction.Promptly, Z slide holder 52 according to based on the testing result of focus detection system 4, move from the instruction of control device CONT, surface (plane of exposure) coupling that the focal position (Z position) of control substrate P and angle of inclination make substrate P is via projection optical system PL and the formed image planes of liquid LQ.

Accessory plate 57 is set to surround substrate P on chip bench PST (Z slide holder 52).The surface that accessory plate 57 has a substrate P that is kept with substrate frame PSH is the plane of sustained height roughly.Here, the gap that 0.1～2mm degree is arranged between the edge of substrate P and accessory plate 57, because the surface tension of liquid LQ makes liquid LQ can flow into this gap hardly, even if under near the situation of exposing the periphery to substrate P, also can below projection optical system PL, keep liquid LQ by accessory plate 57.In addition, substrate frame PSH both can be and the different parts of chip bench PST (Z slide holder 52), can also be provided with integratedly with chip bench PST (Z slide holder 52).

Be provided with the substrate alignment system 5 that detects the alignment mark 1 on the substrate P or be arranged at the substrate side reference mark PFM on the reference component 3 on the Z slide holder 52 near the projection optical system PL front end.In addition, be provided with the mask alignment system 6 that detects the mask side group quasi-mark MFM on the reference component 3 that is arranged on the Z slide holder 52 via mask M and projection optical system PL near the mask platform MST.In addition, as the formation of substrate alignment system 5, for example can use disclosed formation in the flat 4-65603 communique of Japan Patent Publication Laid-Open.Around the optical element (optical element of the most close substrate P, chip bench PST) of substrate alignment system 5 ends (terminal end), be provided with the lid (not shown) of lyophobicity (liquid-repellent) in addition to prevent adhering to of liquid.In addition, overlay film is carried out with the material of lyophobicity in the surface of the optical element of substrate alignment system 5 ends, and not only adhering to of liquid LQ prevented, even if liquid also can easily be wiped it attached to the optical element operator of end.In addition, at the optical element of substrate alignment system 5 ends with keep disposing between the metal object of this optical element the seal member that is used to prevent V-ring that liquid immerses etc.In addition, as the formation of mask alignment system 6, for example can use Japan Patent Publication Laid-Open disclosed formation of flat 7-176468 communique and the disclosed formation of the clear 58-7823 communique of Japan Patent Publication Laid-Open.

Liquid feed mechanism 10 is supplied with the liquid LQ of regulation on substrate P in order to form immersion liquid zone AR2, possess: can send the fluid Supplying apparatus 11 of liquid LQ and be connected to fluid Supplying apparatus 11 and have the supply nozzle 13 that the liquid LQ that fluid Supplying apparatus 11 is from then on sent supplies to the supply port on the substrate P via supply pipe 12.Supply nozzle 13 is configured near the surface of substrate P.

Fluid Supplying apparatus 11 possesses the container of accommodating liquid LQ and force (forcing) pump etc., the feed fluid LQ on substrate P via supply pipe 12 and supply nozzle 13.In addition, the liquid of fluid Supplying apparatus 11 is supplied with action and is controlled by control device CONT, and control device CONT can control the liquid quantity delivered for the time per unit on the substrate P of utilizing fluid Supplying apparatus 11.In addition, fluid Supplying apparatus 11 has the temperature adjusting mechanism of liquid LQ, will supply on the substrate P with the liquid LQ of the roughly the same temperature of temperature (for example 23 ℃) in the chamber of accommodation apparatus.In addition, may not leave no choice but in exposure device EX, to possess container or the force (forcing) pump that is used for feed fluid LQ, can also utilize the equipment of factory of being provided with exposure device EX etc.

Liquids recovery mechanism 20 possesses the liquid LQ that reclaims on the substrate P and is connected to the liquid withdrawal system 21 that this reclaims nozzle 23 near the recovery nozzle 23 that the surface disposed of substrate P with via recovery tube 22.Liquid withdrawal system 21 possesses the container of the liquid LQ that vacuum pump equal vacuum system (suction device) for example and collecting post reclaims etc., reclaims liquid LQ on the substrate P via reclaiming nozzle 23 and recovery tube 22.The liquids recovery action of liquid withdrawal system 21 is controlled by control device CONT, and control device CONT may command is utilized the liquids recovery amount of the time per unit of liquid withdrawal system 21.In addition, may not leave no choice but in exposure device EX, to possess vacuum system or the container that is used for withdrawal liquid LQ, can also utilize the equipment of factory of being provided with exposure device EX etc.

Fig. 2 is near the front elevation leading section, liquid feed mechanism 10 and the liquids recovery mechanism 20 that represents the projection optical system PL of exposure device EX.When scan exposure, a part of pattern image of mask M is projected to the AR1 of view field under the optical element 2 of projection optical system PL front end, mask M moves with speed V at-directions X (perhaps+directions X) with respect to projection optical system PL, obtains synchronous substrate P with it and moves with speed β * V (β is the projection multiplying power) at+directions X (perhaps-directions X) via XY slide holder 53.Then, behind the end exposure to a shooting area, the stepping by substrate P makes next shooting area move to the scanning starting position, below, carry out exposure-processed successively in step-scan (step-and-scan) mode for each shooting area.In the present embodiment, set with moving direction and flow through liquid LQ along substrate P.

Fig. 3 is the AR1 of view field of expression projection optical system PL, supply nozzle 13 (13A～13C) and the figure of the position of the recovery nozzle 23 (23A, 23B) of withdrawal liquid LQ relation of feed fluid LQ on X-direction.In Fig. 3, the AR1 of view field of projection optical system PL is shaped as at elongated rectangular-shaped of Y direction, dispose 3 supply nozzle 13A～13C in order to clip the AR1 of this view field along X-direction in+directions X side, dispose 2 and reclaim nozzle 23A, 23B in-directions X side.Then, supply nozzle 13A～13C is connected to fluid Supplying apparatus 11 via supply pipe 12, reclaims nozzle 23A, 23B and is connected to liquid withdrawal system 21 via recovery tube 22.In addition, 180 ° position relation disposes supply nozzle 15A～15C and reclaims nozzle 25A, 25B to have rotated supply nozzle 13A～13C and recovery nozzle 23A, 23B roughly.Supply nozzle 13A～13C and recovery nozzle 25A, 25B arrange alternately in Y direction, supply nozzle 15A～15C and recovery nozzle 23A, 23B arrange alternately in Y direction, supply nozzle 15A～15C is connected to fluid Supplying apparatus 11 via supply pipe 16, reclaims nozzle 25A, 25B and is connected to liquid withdrawal system 21 via recovery tube 26.

Then, towards the scanning direction (directions X) shown in the arrow Xa substrate P is moved under the situation of carrying out scan exposure, use supply pipe 12, supply nozzle 13A～13C, recovery tube 22 and reclaim nozzle 23A, 23B, carry out supply and the recovery of liquid LQ by means of fluid Supplying apparatus 11 and liquid withdrawal system 21.Promptly, when substrate P court-directions X moves, liquid LQ is via supply pipe 12 and supply nozzle 13 (13A～13C) be fed on the substrate P from fluid Supplying apparatus 11, simultaneously liquid LQ is recycled to liquid withdrawal system 21 via reclaiming nozzle 23 (23A, 23B) and recovery tube 22, and liquid LQ flows to be full of between projection optical system PL and the substrate P at-directions X.On the other hand, towards the scanning direction (+directions X) shown in the arrow Xb substrate P is moved under the situation of carrying out scan exposure, use supply pipe 16, supply nozzle 15A～15C, recovery tube 26 and reclaim nozzle 25A, 25B, carry out supply and the recovery of liquid LQ by means of fluid Supplying apparatus 11 and liquid withdrawal system 21.Promptly, when substrate P court+directions X moves, liquid LQ is via supply pipe 16 and supply nozzle 15 (15A～15C) be fed on the substrate P from fluid Supplying apparatus 11, simultaneously liquid LQ is recycled to liquid withdrawal system 21 via reclaiming nozzle 25 (25A, 25B) and recovery tube 25, and liquid LQ flows to be full of between projection optical system PL and the substrate P at+directions X.Like this, control device CONT use fluid Supplying apparatus 11 and liquid withdrawal system 21 flow to the direction identical with the moving direction of substrate P along the moving direction of substrate P with liquid LQ.In the case, because the liquid LQ that is for example supplied with via supply nozzle 13 from fluid Supplying apparatus 11, follow to substrate P-mobile being introduced between projection optical system PL and the substrate P of directions X flow like this, so even if the energize of fluid Supplying apparatus 11 less also can be between projection optical system PL and substrate P feed fluid LQ easily.Then, by switch the direction that liquid LQ is flowed according to the scanning direction, edge+directions X or-can both be full of with liquid LQ between projection optical system PL and the substrate P under the situation of which scanning direction substrate P of directions X, and can obtain the higher resolution and the wider depth of focus.

Fig. 4 is a general view of watching the Z slide holder 52 of chip bench PST from the top.Orthogonal 2 sides at rectangular-shaped Z slide holder 52 dispose moving lens 55, are keeping substrate P in the substantial middle of Z slide holder 52 via not shown substrate frame PSH.The accessory plate 57 that has with the plane of the surperficial roughly the same height of substrate P is being set around substrate P as described above.Then, on substrate P, make a plurality of shooting area S1～S20 as the exposure object zone be rectangular and set, accompany each shooting area S1～S20 and be formed with alignment mark 1 respectively.In addition, though each shooting area adjoins each other and illustrates like this in Fig. 4, isolate in fact mutually, alignment mark 1 is arranged in the line as this area of isolation.

1 turning at Z slide holder 52 is provided with reference component 3.On reference component 3, separate configuration with the position relation of stipulating by substrate alignment system 5 detected reference mark PFM with by the 6 detected reference mark MFM of mask alignment system.Base material (base at reference component 3

Material) go up opticses such as using the glass plate parts, different materials (materials that light reflectivity is different) carries out pattern formation by for example using mutually on its base material, and forms reference mark PFM, MFM.Then, reference mark PFM, MFM do not have difference in height ground to form the surperficial general planar of reference component 3.Thereby the effect as the datum level of focus detection system 4 can also be played in the surface of reference component 3.

Fig. 5 is the figure of expression reference component 3, and Fig. 5 (a) is a plane graph, and Fig. 5 (b) is the sectional view along arrow A-A of Fig. 5 (a).Reference component 3 has by the base material of forming 33 and the 1st material 31 and the 2nd materials 32 with different mutually light reflectivities that form through pattern on this base material 33 such as glass plate parts.The 1st material 31 is by the lower chromium oxide (Cr of light reflectivity in the present embodiment ₂O ₃) constitute, the 2nd material 32 is made of the chromium (Cr) that light reflectivity is higher than chromium oxide.And the reference mark PFM, the MFM that are crosswise formation are formed by chromium oxide, and it surrounds like this with chromium on every side and disposes, and then also disposes chromium oxide in the zone in its outside.Be not limited to the combination of above-mentioned material in addition as the material that will use, for example can also constitute the 1st material, constitute the 2nd material with chromium with aluminium.Then, reference mark PFM, MFM top (upper suface) just becomes the no difference in height mark that no difference in height ground forms.

For forming so no difference in height mark, for example on the base material 33 vapor deposition) etc. by evaporation (vapour deposition: after being provided with chromium oxide film, by etch processes (etching

Process) etc. form groove in the regulation zone of chromium oxide film.Then, after the inside of above-mentioned groove is provided with chromium, handles (milled processed of chemistry, mechanical system) etc. by CMP upper surface is carried out milled processed, just can form the no difference in height mark of forming by chromium oxide and chromium thus.In addition,, carry out milled processed, also can form no difference in height mark by after forming groove on the base material 33 and in this groove, having imbedded chromium or chromium oxide.Perhaps, by on base material 33, being coated with because the materials such as sensitization material that optical processing (perhaps heat treatment) is gone bad, and it is light (perhaps hot) contact is corresponding regional so that this regional metamorphism (variable color etc.) also can form no difference in height mark with the reference mark that will form.Perhaps, wait the formation mark by the steaming of chromium film of base material 33, and with the coating of photopermeability materials such as quartz thereon, also can make no differences in heightization (planarization) above the reference component 3 thus.

Among reference component 3 top, at least a portion zone of comprising reference mark PFM, MFM is lyophobicity (hydrophobicity).The top Zone Full that is reference component 3 in the present embodiment is a lyophobicity.In addition, in the present embodiment, the top of reference component 3 becomes lyophobicity by implementing attached and lyophoby processing lyophobicity.As the lyophoby processing, for example can enumerate the coating of having used material and handle with lyophobicity.For example can enumerate synthetic resin such as fluoride compound and silicon compound or propylene resin and polyethylene as material with lyophobicity.In addition, being used for the surface-treated film both can be that monofilm also can be by a plurality of layers of film of forming.

In addition, the material that has lyophobicity by use is as above-mentioned the 1st, the 2nd material 31,32 that forms reference mark MFM, PFM, also can make reference component 3 above have lyophobicity.In addition, by on the 1st glass plate parts, utilizing the material formation reference mark of regulations such as chromium, overlapping thereon the 2nd glass plate parts, and clip the reference mark of forming by above-mentioned chromium etc. with the 1st, the 2nd glass plate parts, also can form the reference component that has above smooth (no difference in height).In the case, as long as the 2nd glass plate parts are implemented the lyophoby processing, so can successfully carry out the lyophoby processing.

In addition, though here, reference mark PFM, MFM are formed crosswise, and its shape is not limited to crosswise, also can use the mark shape to each detection system the best.In addition, though reference mark PFM, MFM are emphasized and illustrated, in fact has the live width of several μ m degree.In addition, using under the situation of the disclosed system of the clear 58-7823 communique of Japan Patent Publication Laid-Open, on reference component 3, forming light transmissive portion as reference mark MFM as mask alignment system 6.Also wish to imbed the material of photopermeability such as quartz in the case or, make the top no difference in heightization of reference component 3 with above the material coating reference component 3 of photopermeability or the like in the light transmissive portion of reference component 3.In addition, though the top datum level as focus detection system 4 of reference component 3 uses as described above, also the datum level of focus detection system 4 can be separated being arranged on the Z slide holder 52 with reference component 3.In addition, reference component 3 and accessory plate 57 can also be provided with integratedly.

Secondly, on one side just use above-mentioned exposure device EX that the pattern of the mask M example to the process of substrate P exposure is described on one side with reference to the flow chart of Fig. 6.

The substrate P that on the substrate frame PSH of Z slide holder 52, packs into, and make substrate P remain on this substrate frame PSH (with reference to Fig. 1).Then, before carrying out the supply of liquid LQ, under the state that does not have liquid LQ on the substrate P, at first carry out instrumentation and handle from liquid feed mechanism 10.Control device CONT advances along the swash arrow C of Fig. 4 for the optical axis AX that makes projection optical system PL, on one side the output mobile XY slide holder 53 on one side of monitoring laser interferometer 56.Move in the way at it, substrate alignment system 5 does not detect successively via liquid LQ ground and accompany shooting area S1～S20 and be formed on a plurality of alignment marks 1 (step SA1) on the substrate P.

Here, XY slide holder 53 is stopped when substrate alignment system 5 carries out the detection of alignment mark, and instrumentation is carried out by laser interferometer 56 in the position of the chip bench PST when substrate alignment system 5 carries out the detection of alignment mark 1.Its result is able to instrumentation by the positional information of each alignment mark 1 in the coordinate system of laser interferometer 56 defineds.Use the testing result of the positional information of substrate alignment system 5 and laser interferometer 56 detected alignment marks 1 to be output to control device CONT.In addition, in the substrate alignment system 5 of present embodiment, adopt make chip bench PST static and on mark irradiation from the illumination light such as white light of Halogen lamp LED, by means of the image of imaging apparatus resulting mark of shooting in the shooting visual field of regulation, and FIA (the Field Image Alignment) mode of the position by image processing instrumentation mark.

In addition, substrate alignment system 5 has the detection reference position in the coordinate system by laser interferometer 56 defineds, and the positional information of alignment mark 1 detects as the deviation with this detection reference position.

Here, for example obtain the positional information of shooting area S1～S20 in the present embodiment by disclosed such, so-called EGA (the Enhanced Global Alignment) mode of the clear 61-44429 communique of Japan Patent Publication Laid-Open.For this reason, control device CONT specifies at least three zones (EGA shooting area) among the last formed a plurality of shooting area S1～S20 of substrate P, and uses substrate alignment system 5 to detect the alignment mark 1 that accompany each shooting area.In addition, substrate alignment system 5 also can detect the whole alignment marks 1 on the substrate P.

In addition, in the moving of this XY slide holder 53, by focus detection system 4 not via liquid LQ detect the surface information of substrate P.It is the imaging surface of PL and the formed pattern image of liquid LQ and the deviation on substrate P surface that focus detection system 4 detects via projection optics.Utilize the detection of the surface information of focus detection system 4 that the whole shooting area S1～S20 on the substrate P are carried out one by one, the position of the scanning direction (X-direction) of testing result and substrate P is mapped stores among the control device CONT.In addition, utilize the detection of the surface information of focus detection system 4 also can only carry out to a part of shooting area.

Secondly, control device CONT obtains a plurality of shooting area S1～S20 positional information (step SA2) separately on the substrate P based on the testing result of the positional information of alignment mark 1 by calculation process (EGA processing).

In the EGA mode, after using substrate alignment system 5 to detect the positional information (coordinate position) of the alignment mark that accompany above-mentioned EGA shooting area 1 specified among the step SA1, based on this detected value and alignment characteristics (positional information) the relevant error parameter (skew, ratio, revolution, quadrature degree) of design load by the shooting area S1～S20 on statistical calculations such as least square method and decision and the substrate P.Then, based on the value of this parameter that is determined the whole shooting area S1～S20 on the substrate P are proofreaied and correct the coordinate figure that it designs.In view of the above, the position of each shooting area on the substrate P of the detection reference position of substrate alignment system 5 and chip bench PST institute mounting relation is just determined.Promptly, control device CONT can learn where each shooting area on the substrate P is positioned at respect to the detection reference position of substrate alignment system 5 from the output of laser interferometer 56.

When the detection of the surface information of the detection of the alignment mark 1 of substrate P and substrate P finishes, control device CONT moves XY slide holder 53 so that the surveyed area of substrate alignment system 5 is positioned on the reference component 3.Reference mark PFM on the substrate alignment system 5 no liquid ground detection reference parts 3 is to detect the positional information (step SA3) by the reference mark PFM in the coordinate system of laser interferometer 56 defineds.

By using substrate alignment system 5 to detect the positional information of reference mark PFM, just detect by the detection reference position of the substrate alignment system 5 in the coordinate system of laser interferometer 56 defineds and the position relation of reference mark PFM.

After the detection both sides of the positional information of the detection of the positional information of the alignment mark 1 that has used substrate alignment system 5 and the reference mark PFM on the Z slide holder 52 finished, control device CONT moved XY slide holder 53 so that can come reference mark MFM on the detection reference parts 3 by mask alignment system 6.Because reference mark MFM observes via projection optical system PL in mask alignment system 6, so the leading section of projection optical system PL is mutually opposed with reference component 3.Here, control device CONT begins to utilize supply and the recovery of the liquid LQ of liquid feed mechanism 10 and liquids recovery mechanism 20, is full of between optical element 2 front end faces of projection optical system PL leading section and reference component 3 top to form the immersion liquid zone with liquid LQ.In addition, only be formed on the reference component 3, both can have striden across reference component 3 and accessory plate 57 and form, also can stride across reference component 3, accessory plate 57 and substrate P and form though wish immersion liquid zone AR2.

Secondly, control device CONT carries out the detection (step SA4) of reference mark MFM via mask M, projection optical system PL and liquid LQ by mask alignment system 6.

Thus, use reference mark MFM to detect the projected position information of the pattern image of the mask M in the XY plane via projection optical system PL and liquid LQ, be able to instrumentation by the projected position of the pattern image in the coordinate system of laser interferometer 56 defineds and the position relation of reference mark MFM.In addition, in the mask alignment system 6 of present embodiment, adopt, the view data of the mark of being made a video recording with CCD camera etc. is carried out VRA (the Visual Reticle Alligment) mode of image processing with the certification mark position the mark irradiates light.

Control device CONT find the solution as between the projected position of the detection reference position of substrate alignment system 5 and pattern image every the baseline amount (step SA5) of (position relation).

Particularly, the position relation of the position relation of the projected position of the pattern image of being obtained among the detection reference position of the substrate alignment system of being obtained from step SA3 5 and the position of reference mark PFM relation, the step SA4 and reference mark MFM and predetermined reference mark PFM (reference component 3a) and reference mark MFM (reference component 3b) decides the position by the detection reference position of the projected position of the pattern image in the coordinate system of laser interferometer 56 defineds and substrate alignment system 5 to concern (baseline amount).

When as described above instrumentation processing finishes, control device CONT stops to utilize the supply action of the liquid LQ on reference component 3 of liquid feed mechanism 10.On the other hand, control device CONT is with the recovery action of the liquid LQ on the reference component 3 that continues to utilize liquids recovery mechanism 20 specified time limit.Then, after the process, control device CONT stops to utilize the recovery action of liquids recovery mechanism 20 during the afore mentioned rules.So, the liquid LQ on the reference component 3 just is recovered.In addition, preferred formation is that reference component 3 is provided with integratedly with accessory plate 57, reference component 3b and substrate P carry out continuously with roughly the same height via accessory plate 57, in the case, just can keep under the state of liquid LQ the immersion liquid zone of liquid LQ is moved on the substrate P from reference component 3, and supply with action without the liquid of stop liquid feed mechanism 10 in the image planes side of projection optical system PL.

Secondly, control device CONT makes under projection optical system PL and the opposed state of substrate P, and control device CONT drives liquid feed mechanism 10 and liquids recovery mechanism 20, and beginning is at the liquids recovery action on the supply of the liquid on substrate P action and the substrate P.In view of the above, between projection optical system PL and substrate P, form immersion liquid zone AR2.Then, after having formed immersion liquid zone AR2 on the substrate P, a plurality of shooting areas of substrate P respectively by projection pattern picture successively to carry out immersion exposure (step SA6).

More specifically, based on the position relation (baseline amount) of each shooting area of being obtained among the step SA2 with respect to the projected position of the detection reference position of the substrate alignment system of being obtained among the positional information of the detection reference position of substrate alignment system 5 and the step SA5 5 and pattern image, mobile XY slide holder 53 makes each shooting area S1～S20 and the pattern image contraposition on the substrate P on one side, handles Yi Bian carry out the immersion exposure of each shooting area.

When each the shooting area S1～S20 on the scan exposure substrate P, use each information of in aforesaid instrumentation is handled, being obtained to carry out exposure-processed.Promptly, based on the arrangement (positional information) of the shooting area of being obtained among the step SA2, make each shooting area after the projected position of pattern image carries out contraposition successively the exposure.In addition, detect the alignment mark 1 in each shooting area on the substrate P one by one and this shooting area overlapped exposure though also can carry out with substrate alignment system 5, so-called (die-by-die) piecewise mode, but in the case, in the exposure of the shooting area of substrate P on substrate P configuration liquid LQ, in the detection of the alignment mark 1 that utilizes substrate alignment system 5, do not dispose liquid LQ and perseveration on the substrate P, so preferred to constitute be the arrangement (positional information) of obtaining shooting area as present embodiment in advance, and according to this arrangement of obtaining mobile substrate P one by one.

In addition, in scan exposure,, adjust substrate P surface and do not use focus detection system 4 via the positions relation of the formed image planes of liquid LQ based on the surface information of the substrate P that is obtained before the liquid LQ supply at each shooting area S1～S20.In addition, both can before liquid LQ supplies with, not obtain the surface information of substrate P and the positions of detecting substrate P surface and image planes via liquid LQ in scan exposure concern and adjust, can carry out both yet.

The scan exposure of each shooting area S1～S20 on substrate P finishes, and control device CONT stops to utilize the liquid of liquid feed mechanism 10 to supply with.On the other hand, control device CONT continues the driving of liquids recovery mechanism 20 with the stipulated time after having stopped utilizing the liquid supply of liquid feed mechanism 10.In view of the above, the liquid LQ on the substrate P just is recovered.In addition, when the liquid LQ that reclaims on the substrate P, also drive substrate platform PST makes the recovery nozzle 23 of substrate P and liquids recovery mechanism 20 relatively move withdrawal liquid LQ on one side on one side.

After the exposure of substrate P is finished, with other substrate P ' remain on expose on the chip bench PST when, can make the projected position of the pattern image of the shooting area of substrate P ' and mask carry out contraposition, and need not carry out the detection of the positional information of reference mark PFM, MFM on the chip bench PST.In the case, after making other substrate P ' remain on substrate frame PSH on the Z slide holder 52, use substrate alignment system 5 to detect the subsidiary positional information that is arranged at the alignment mark 1 of shooting area.In view of the above, utilize EGA to handle equally with the substrate P that before had been exposed and try to achieve the positional information of each shooting area of substrate with respect to the detection reference position of alignment system 5.In view of the above, just can make projection optical system PL mutually opposed, make each shooting area and pattern image contraposition on the substrate P ', at each shooting area exposing patterns picture of substrate P ' with substrate P '.

Like this, when a plurality of substrate P that expose in turn (P '), just need not be maintained at the detection action of the reference mark PFM, the MFM that just are used to find the solution the baseline amount on the Z slide holder 52 (substrate frame PSH) whenever other substrate P ', by detecting the positional information of the alignment mark 1 on (loading) substrate P ' that Z slide holder 52 kept, based on the previous baseline amount mobile substrate P ' that obtains, just can efficient accurately substrate P ' be carried out contraposition with pattern image well.And, be used to find the solution the baseline amount reference mark PFM, MFM detection action each predefined substrate handle piece number or when changing mask etc., get final product each specified time limit.

As described above, when the reference mark PFM that detects on the Z slide holders 52 with substrate alignment system 5, by just not detecting well detection reference mark PFM and the not influences such as variations in temperature of liquid body LQ via liquid LQ ground.In addition, need not constitute substrate alignment system 5 in the mode that is fit to immersion liquid, utilization detection system in the past can remain untouched.Then, when the reference mark MFM that uses mask alignment system 6 to detect on the Z slide holder 52, same during with immersion exposure, by detecting at the image planes side full of liquid LQ of projection optical system PL and via projection optical system PL and liquid LQ, just can be based on this testing result projected position of check pattern picture accurately.And, can be based on the chip bench PST positional information separately in the detection action of these substrate alignment systems 5 and mask alignment system 6, accurately obtain baseline amount as the position relation (distance) of the projected position of the detection reference position of substrate alignment system 5 and pattern image, based on this baseline amount, the also contraposition substrate P (pattern image of shooting area S1～S20) and mask M accurately when carrying out at the coincidence of substrate P exposure.

In the present embodiment, under the state that has disposed liquid LQ on the reference mark MFM (reference component 3), carry out mark and detect, but in this detection action, on the substrate frame PSH of Z slide holder 52, dispose substrate P by mask alignment system 6.In view of the above, even if hypothesis liquid LQ flows out from reference component 3, can prevent that also liquid LQ is immersed in the inner and chip bench PST inside of substrate frame PSH.In addition, even if exceed at immersion liquid zone AR2 under the situation of inside edge of accessory plate 57, can prevent that also liquid LQ is immersed in the inner and chip bench PST inside of substrate frame PSH.Thereby, just can prevent to result from the generation of trouble such as get rusty of each parts of the fault of for example electric equipment of chip bench PST inside of the liquid LQ that immerses and electric leakage or chip bench PST inside.

In addition, as described above, in the present embodiment when the reference mark PFM on the detection reference parts 3, MFM, the moisture state (wetstate) of configuration liquid LQ and the drying regime (dry state) that do not dispose liquid LQ are switched on reference component 3, but as described with reference to Figure 5, owing to make the reference mark PFM, the MFM that are formed on the reference component 3 not have difference in height, even if so when for example switching to moisture state from drying regime, the mark part among the liquid LQ on reference component 3 also is difficult to generate bubble.In addition, in order to switch to drying regime from moisture state from the reference component 3 when the withdrawal liquid LQ, also withdrawal liquid LQ can't make liquid LQ residue in mark part well.Particularly in the present embodiment because the top of reference component 3 is lyophobicity, so withdrawal liquid LQ more well just.Thereby for example mask alignment system 6 just can accurately carry out the detection of reference mark MFM and can not be subjected to the influence of bubble etc.Substrate alignment system 5 just can accurately carry out the detection of reference mark PFM and can not be subjected to the influence of residual liquid LQ.

, in the present embodiment, when with substrate alignment system 5 detection reference mark PFM, on reference component 3, do not dispose liquid LQ, when with the mask alignment 6 detection reference mark MFM of system, then on reference component 3, dispose liquid LQ.And, it is the formation that difference (side by side non-) detects mask side group quasi-mark MFM and substrate side reference mark PFM, but reference mark PFM and reference mark MFM fully isolate on reference component 3, reference mark PFM part is not exposed under the situation of liquid LQ, can reference mark PFM be made as no difference in height mark yet.In addition, also mask side group quasi-mark MFM can be formed at different separately reference components with substrate side reference mark PFM.In the case, by non-mask side group quasi-mark MFM and the substrate side reference mark PFM of side by side detecting as present embodiment, just need on the reference component that has formed reference mark PFM, not form the immersion liquid zone.Thereby, not only do not need to carry out the immersion liquid correspondences such as no difference in heightization of reference mark PFM, can also prevent watermark generations such as (water mark).

In the present embodiment, be constructed as follows: at first by do not try to achieve positional information (the step SA1 of a plurality of shooting area S1～S20 on the substrate P with the alignment mark 1 on the substrate alignment system 5 detection substrate P via liquid LQ ground, SA2), then not via the reference mark PFM (step SA3) on the liquid LQ ground detection chip bench PST, then by try to achieve the projected position (step SA4) of pattern image with the 6 detection reference mark MFM of mask alignment system via projection optical system PL and liquid LQ at the image planes side full of liquid LQ of projection optical system PL, after accurately obtaining (step SA5), substrate P is carried out immersion exposure (step SA6) as the baseline amount of the position relation (distance) of the projected position of the detection reference position of substrate alignment system 5 and pattern image.Promptly, in above-mentioned steps SA1～step SA3, at the image planes side of projection optical system PL full of liquid LQ not, and in step SA4～step SA6 in the formation of the image planes side full of liquid LQ of projection optical system PL.By handling like this, just can reduce the image planes side of projection optical system PL not full of liquid LQ drying regime and at the switching times of the moisture state of the image planes side full of liquid LQ of projection optical system PL, therefore can improve production capacity (throughput).For example switching to from moisture state under the situation of drying regime, just need after switching, remove the operation of the liquid LQ that for example remains in grade above the reference component 3, but if the switching times increase then this liquid number of times of removing operation also make treatment effeciency low with regard to becoming more.But, just can improve production capacity by lowering switching times.

By after the detection of having carried out reference mark PFM with substrate alignment system 5 (step SA3), carry out the detection (step SA1, SA2) of the alignment mark 1 on the substrate P, then after the detection of having carried out reference mark MFM with mask alignment system 6 via projection optical system PL and liquid LQ (step SA4, SA5), substrate P is carried out immersion exposure handle (step SA6), also can similarly reduce the switching times of drying regime and moisture state with aforesaid present embodiment.On the other hand, because as present embodiment, utilize continuously substrate alignment system 5 reference mark PFM detection action and utilize the detection action via the reference mark MFM of projection optical system PL and liquid LQ of mask alignment system 6, so the detected state change of the detected state just can avoid the detection action of the reference mark MFM that utilizes mask alignment system 6 time during the trouble of baseline amount of concerning as the position of the projected position of the detection reference position of substrate alignment system 5 and pattern image of instrumentation and so on greatly and accurately with respect to the detection action of the reference mark PFM that utilizes substrate alignment system 5.For example, just have because result from when carrying out the stopping of linear motor that slide holder drives and the thermal change of the exposure device environment of the difference of the caloric value in when driving etc. moving, and the change of optical characteristics of physics change, alignment system 5 of projection optical system PL and the position relation of alignment system 5 and the possibility of carrying out that environment (temperature) on the instrumentation light path of laser interferometer 56 of position instrumentation of chip bench PST changes etc. take place.In the case, if the time interval when utilizing the detection action of detection when action and the reference mark MFM that utilizes mask alignment system 6 of reference mark PFM of substrate alignment system 5 is bigger, because above-mentioned thermal change moves the accurately possibility of the trouble of instrumentation baseline amount takes place with regard to having.But, utilize the detection of the reference mark PFM of substrate alignment system 5 to move and utilize the detection action of the reference mark MFM of mask alignment system 6 just can avoid above-mentioned trouble by continuous as present embodiment.

In addition, in the order of the aligning shown in the flow chart of Fig. 6, at the alignment mark 1 (step SA1) that does not detect on the substrate P via liquid ground, carried out after the EGA processing (step SA2), do not carry out the detection (step SA3) of reference mark PFM via liquid ground, and then carrying out the detection (step SA4) of reference mark MFM via projection optical system PL and liquid thereafter, but also can change step SA2 and step SA3.In the case, though reference mark PFM is more elongated with what than the order of Fig. 6 with the assay intervals of reference mark MFM, owing to can carry out supply, the recovery action of the liquid of less number of times equally with the order of Fig. 6, so favourable on the production capacity this point.Though in addition in the above-described embodiment, divide be arranged reference mark PFM and reference mark MFM, also can detect a reference mark with substrate alignment system 5 and mask alignment system 6.And then, also can after having obtained the baseline amount, the detection via liquid of the detection of the no liquid of carrying out reference mark PFM and reference mark MFM detect the alignment mark 1 on the substrate P.

Fig. 7 and 8 is schematic diagrames of expression other execution mode of the present invention.Fig. 7 is illustrated in the state that disposes projection optical system PL on the substrate P, and Fig. 8 is illustrated in the state that disposes projection optical system PL on the reference component 3.In Fig. 7 and 8, be formed with the recess 60 that is used for configuration substrate P on substrate frame PSH on the Z slide holder 52, and be formed with the recess 61 that is used for configuration baseline parts 3.Then, the top one side that roughly becomes of top and Z slide holder 52 of top, the reference component 3 that is configured in recess 61 of the substrate P that is configured in recess 60 is provided with like this.By such processing, come reference mark MFM on the detection reference parts 3 via liquid LQ, even if so becoming from state shown in Figure 7 under the situation of state shown in Figure 8, also can keep under the state of liquid LQ chip bench PST being moved along the XY direction in the image planes side of projection optical system PL.Certainly, under the state that also can keep liquid LQ under the situation that becomes state shown in Figure 7 from state shown in Figure 8, chip bench PST is moved along the XY direction in the image planes side of projection optical system PL.In addition, coming via liquid LQ under the situation of the reference mark MFM on the detection reference parts 3, be considered to size according to the immersion liquid zone of formed liquid LQ on the reference component 3, the part (end) that immersion liquid zone on the reference component 3 will take place in the detection of reference mark MFM action is configured in the situation in the recess 60 that is disposing substrate frame PSH, but, just can prevent that liquid LQ is to recess 60 inner immersions by on the substrate frame PSH of recess 60, configuring substrate P.In addition, substrate P just can make recess 60 smooth by configuration, and can prevent to result from the interference in the immersion liquid zone of recess (stage portion).In addition, except the reference component 3 that will form reference mark is embedded in the formation of recess 61 of Z slide holder 52, recess 61 can also be set and on Z slide holder 52 direct formation reference mark.

In addition, at above-mentioned execution mode, employing is after the alignment mark 1 that has detected on the substrate P, utilize the order of detection of the reference mark MFM of mask alignment system 6, therefore in the detection action via the reference mark MFM of liquid LQ that utilizes mask alignment system 6, the substrate P that is used to make device just is disposed at substrate frame PSH.But, also have the situation of independent instrumentation baseline amount and adopt in the possibility that behind the instrumentation of baseline amount substrate P is contained in the sequential scheduling on the substrate frame PSH.In the case, illusory substrate DP can also be configured on the substrate frame PSH certainly.Here, illusory substrate DP has shape and the size roughly the same with the substrate P of device manufacturing usefulness.Illusory in addition substrate DP can also be with forming with substrate P identical materials, for example silicon, but short of elution (stripping) because of the pollutant that causes with contacting of liquid LQ etc. just can be used for various materials illusory substrate DP.In the case, under the state that illusory substrate DP is configured on the substrate frame PSH, carry out detection via the reference mark MFM of projection optical system PL and liquid LQ by mask alignment system 6.Then, there is not liquid LQ ground to carry out the detection of reference mark PFM by substrate alignment system 5, with instrumentation baseline amount.Before or after the detection action of this substrate alignment system 5, illusory substrate DP unloads from substrate frame PSH, and the substrate P of device manufacturing usefulness is installed on the substrate frame PSH.Then, after the alignment mark on the substrate P 1 is detected by substrate alignment system 5,, carry out the shooting area on the substrate P and the contraposition of pattern image, to carry out immersion exposure based on the positional information and the baseline amount of the alignment mark on the substrate P 1.

Fig. 9 schematically shows the plane graph that the illusory substrate that possesses the above-mentioned illusory substrate DP of keeping is used example storehouse 70A, exposure device EX.Exposure device EX is set at the inside of chamber device CH in Fig. 9.The inside of chamber device CH is maintained at environment provided (temperature, humidity) by air-conditioning system.Chip bench PST can be provided with at the movable range SR of regulation movably in the inside of chamber device CH.On exposure device EX, be connected with the carrying device 80 of carrying substrate P.On carrying device 80, be connected with coating developer C/D (coater/developer) with the function of developing to the function of substrate P coating photosensitive material with the substrate P that exposure-processed finishes via interface portion IF.Carrying device 80 possesses the substrate P of maintenance and the 1st arm of carrying 81 and the 2nd arm 82.1st, the 2nd arm 81,82 is moved by guide part 81A, 82A channeling conduct respectively on one side on one side.1st, the 2nd arm 81,82 and guide part 81A, 82A are arranged on the inside of the 2nd chamber device CH2.Be coated with coating developer C/D substrate P before the exposure-processed of photosensitive material by the 1st arm 81 and the 2nd arm 82 by the chamber device CH inside of conveyance to exposure device EX.The substrate P of chip bench PST before exposure-processed is moved to substrate and changes position RP when packing into by the 2nd arm 82.Change packed into the chip bench PST of substrate P of position RP at substrate and move to the exposure-processed position EP that is in side under the projection optical system PL.In addition, the chip bench PST that keeps having finished the substrate P of exposure-processed moves to substrate and changes position RP.The substrate P that exposure-processed finishes changes position RP at substrate and is removed by the 2nd arm 82 (perhaps other arms), and is moved to coating developer C/D by the 1st arm 81 (perhaps other arms) via interface portion IF.

Then, when illusory substrate DP is disposed at substrate frame PSH, control device CONT for example uses the illusory substrate of the 2nd arm 82 from the standby place of the illusory substrate DP of conduct of the inside that is arranged at chamber device CH to take out illusory substrate DP with storehouse 70A, changes position RP at substrate and is contained on the substrate frame PSH of chip bench PST.Then, keeping on the substrate frame PSH under the state of illusory substrate DP, control device CONT carries out the detection via the reference mark MFM of projection optical system PL and liquid LQ that for example utilizes mask alignment system 6 as described above.

In addition, handle via the detection of aforesaid liquid LQ be through with after, when chip bench PST unloaded, at first, control device CONT used liquids recovery mechanism 20 grades to adhere to, remain in the operation of removing of liquid LQ on the illusory substrate DP with illusory substrate DP.Then, control device CONT will keep implementing liquid and remove the chip bench PST of the illusory substrate DP of processing and move to substrate and change position RP.Then, control device CONT uses the 2nd arm 82 (perhaps other arms) to unload illusory substrate DP from chip bench PST, and is accommodated in the illusory substrate storehouse 70A as the standby place of illusory substrate DP.

In addition, though in the present embodiment, illusory substrate is set at the inside of the chamber device CH that accommodates exposure device EX with storehouse 70A, but also can as among Fig. 9, shown in the Reference numeral 70B like that, with illusory substrate with the inside of lab setting in the 2nd chamber device CH2 that for example accommodates carrying device 80.Perhaps, illusory substrate can also be configured in the inside of coating developer C/D with the storehouse.

In addition, illusory substrate DP preferably has lyophobicity.In the present embodiment, illusory substrate DP has lyophobicity through the lyophoby processing.As the lyophoby processing, for example can enumerate the coating of having used material and handle with lyophobicity.For example can enumerate synthetic resin such as fluoride compound and silicon compound or propylene resin and polyethylene as material with lyophobicity.In addition, being used for the surface-treated film both can be that monofilm also can be by a plurality of layers of film of forming.

In addition, the lyophobicity of illusory substrate DP is carried out deterioration ageingly.Therefore, can also change illusory substrate DP according to the deterioration of this lyophobicity.In addition, also can form illusory substrate DP with the material (for example, the material of fluorine class or acrylic acid) of lyophobicity.

Figure 10 is the schematic diagram of other execution modes of expression.Go up at Z slide holder 52 (chip bench PST) as shown in figure 10 and form recess 60, and have substrate frame PSH with recess 60 corresponding shapes in the internal configurations of this recess 60, the lowering or hoisting gear 63 that substrate frame PSH is carried out lifting can also be set in Z slide holder 52 inside.Then, utilize mask alignment system 6 via the detection action of the reference mark MFM of liquid LQ the time, lowering or hoisting gear 63 rises substrate frame PSH like that shown in Figure 10 (a), makes the top of Z slide holder 52 and becomes one side above the substrate frame PSH.So can also prevent to be immersed in the generation of troubles such as slide holder 52 (chip bench PST) inside for the liquid LQ that is formed on the immersion liquid zone on the reference component 3 via liquid LQ instrumentation reference mark MFM.And, when the substrate P that makes device manufacturing usefulness in order to carry out immersion exposure remains in substrate frame PSH, substrate frame PSH is descended by such lowering or hoisting gear 63 shown in Figure 10 (b), be provided for disposing the recess 60 of substrate P.In addition, liquid LQ when the mounting substrate P attached to the situation on the substrate frame PSH under, the liquid LQ that has adhered to is removed or reclaims the back substrate P is carried out mounting for well.

In addition, though in the above-described embodiment, when the reference mark MFM that detects via projection optical system PL and liquid LQ on the chip bench PST, with substrate P, illusory substrate DP remains in substrate frame PSH, to prevent that liquid LQ is immersed in Z slide holder 52 inside, but be not limited to the detection of reference mark MFM, during the use of the various measurement sensors of hope on Z slide holder 52 (chip bench PST) etc., when periphery on Z slide holder 52 (chip bench PST) forms immersion liquid zone AR2, substrate P or illusory substrate DP are remained on substrate frame PSH go up or use formation as shown in Figure 10 to immerse to Z slide holder 52 (chip bench PST) is inner to prevent liquid LQ.

, as described above, be used to find the solution the detection action of reference mark PFM, the MFM of baseline amount, each predefined substrate handle piece number or when changing mask M etc., get final product each specified time limit.And, in the above-described embodiment,, on substrate frame PSH, keep good illusory substrate DP by substrate P being contained in substrate frame PSH when going forward independent instrumentation baseline amount etc., just can prevent that liquid LQ is immersed in substrate frame PSH inside and chip bench PST inside.On the other hand, when instrumentation baseline amount, by remaining in substrate frame PSH at the substrate P that exposure-processed is finished rather than illusory substrate DP being remained under the state of substrate frame PSH, be used to find the solution the detection action of reference mark PFM, the MFM of baseline amount, can prevent that also liquid LQ is immersed in substrate frame PSH inside and chip bench PST inside.And, after the instrumentation of baseline amount that is through with, unload the substrate P that this exposure-processed finishes and get final product.Promptly, after the exposure of the substrate P that is through with, under the substrate P that this exposure-processed is finished remains on state on the chip bench PST, utilize the reference mark PFM on the chip bench PST of substrate alignment system 5 positional information detection and utilize the detection of the positional information of the reference mark MFM on the chip bench PST of mask alignment system 6, based on this reference mark PFM, the testing result of the positional information of MFM has been obtained after the baseline amount, the substrate P that this exposure-processed is finished takes out of from chip bench PST, just can prevent that thus liquid LQ is immersed in substrate frame PSH inside and chip bench PST inside.

In addition, also consider, be used to find the solution the formation of detection action of reference mark PFM, the MFM of baseline amount at the state that the substrate P before the exposure-processed is remained in substrate frame PSH.But via liquid LQ detection reference mark MFM the time etc., the possibility that liquid LQ is attached to the alignment mark 1 on the preceding substrate P of exposure-processed uprises.Because the substrate alignment system 5 of the alignment mark 1 on the detection substrate P does not constitute and detects via liquid LQ ground (drying regime), so during the alignment mark 1 on the substrate P before detecting exposure-processed, if on alignment mark 1, be attached with the deterioration that liquid LQ then will cause accuracy of detection with substrate alignment system 5.Thereby, the substrate P after preferably the substrate P that when detection is used to find the solution reference mark PFM, the MFM of baseline amount substrate frame PSH is kept is exposure-processed.

In addition, even if on the Z slide holder 52 (chip bench PST) not under the situation of instrumentation parts such as configuration baseline parts and various measurement sensors, also wish when Z slide holder 52 (chip bench PST) go up to form immersion liquid zone AR2, substrate P or illusory substrate DP are remained on substrate frame PSH go up or use mechanism as shown in Figure 10 to immerse to Z slide holder 52 (chip bench PST) is inner to prevent liquid LQ.

Furtherly, no matter have or not instrumentation parts such as reference component and various measurement sensors on the Z slide holder 52 (chip bench PST), all wish when the recess 60 of Z slide holder 52 (chip bench PST) covers with substrate P or illusory substrate DP etc., to forbid going up formation immersion liquid zone AR2 at Z slide holder 52 (chip bench PST).

For example, recess 60 at Z slide holder 52 (chip bench PST) is used under the situation of coverings such as substrate P or illusory substrate DP, control device CONT can forbid utilizing the liquid of liquid feed mechanism 10 to be supplied with or the moving range of restriction Z slide holder 52 (chip bench PST) in the XY plane, so that the optical element 2 of projection optical system PL is not opposed with Z slide holder 52 (chip bench PST).

In addition, though because the blanket action of controlling exposure device EX integral body of control device CONT, whether be covered with the recess 60 of Z slide holder 52 (chip bench PST) so can judge substrate P or illusory substrate DP etc., detect the detector whether substrate P or illusory substrate DP etc. are covered with but can also use as described later.

In addition, when the alignment mark 1 that detects on the substrate P with substrate alignment system 5, wish that being in liquid LQ does not as described above dispose (not adhering to) state on the alignment mark on the substrate P 1.Substrate P before the exposure-processed of on chip bench PST, being packed into by below the supply nozzle 13 or reclaim below the nozzle 23 or the optical element 2 of projection optical system PL below the time, supply nozzle 13 and reclaim on nozzle 23 or the optical element 2 liquid LQ residual, that adhere to might on substrate P, drip or disperse.And, if this dripping LQ is configured (adhering to) on the alignment mark on the substrate P 1, then substrate alignment system 5 can't carry out the concurrent livelihood sniffing mistake of instrumentation of alignment mark 1, the mistake instrumentation even if can instrumentation also can make the picture of alignment mark 1 and waveform signal distortion, and produce troubles such as aiming at instrumentation precision deterioration.

Perhaps, the position (for example on the accessory plate 57 or on above the Z slide holder 52) that the substrate P that is kept with this chip bench PST among also considering on one side on chip bench PST is different forms immersion liquid zone AR2, on one side by substrate alignment system 5 constituting via the alignment mark 1 on the liquid LQ ground instrumentation substrate P not.Perhaps, consider that also the immersion liquid of the formation of the part (partly) on substrate P on one side zone AR2 does not detect constituting of alignment mark 1 via liquid LQ ground in the outside of this immersion liquid zone AR2 by substrate alignment system 5 on one side.In the case, if liquid LQ disperses or the recovery of liquid LQ is not fully carried out from immersion liquid zone AR2, also will occur in this alignment mark 1 under the state that has disposed liquid LQ on the alignment mark 1 on the substrate P is carried out instrumentation by substrate alignment system 5 trouble.

Thereby the motion track of control device CONT decision chip bench PST is so that be configured in optical element 2 belows that the alignment mark 1 on the former substrate P of the surveyed area of substrate alignment system 5 does not pass through supply nozzle 13 and reclaims nozzle 23 or projection optical system PL.Control device CONT uses a plurality of alignment marks 1 on 5 couples of substrate P of substrate alignment system to carry out instrumentation respectively in turn on one side based on the motion track mobile substrate platform PST that is determined on one side then.

Figure 11 is the figure that is used to illustrate the action when a plurality of alignment marks 1 on the substrate P are carried out instrumentation in turn with substrate alignment system 5 respectively.In Figure 11, near the optical element 2 of projection optical system PL, dispose supply nozzle 13 and reclaim nozzle 23, these optical elements 2, supply nozzle 13 and reclaim nozzle 23+the X side disposes substrate alignment system 5.When a plurality of alignment marks 1 on 5 couples of substrate P of use substrate alignment system under such position relation carry out instrumentation respectively in turn, control loading amount CONT at first will accompany the shooting area that is set at leaning on most on the substrate P-X side like that as Figure 11 (a) shown in alignment mark 1 is configured in the surveyed area of substrate alignment system 5, and comes this alignment mark 1 of instrumentation with substrate alignment system 5.For example the control device CONT alignment mark 1 that will accompany shooting area S10 on the substrate P or S11 (with reference to Fig. 4) etc. is configured in the surveyed area of substrate alignment system 5.In the following description, will at first be called " the 1st alignment mark " by the above-mentioned alignment mark 1 of instrumentation.

Here, control device CONT is after substrate replacing position RP (with reference to Fig. 9) installs to the substrate P before the exposure-processed on the chip bench PST, when the 1st alignment mark 1 on the substrate P is disposed at the surveyed area of substrate alignment system 5, mobile substrate platform PST so that among a plurality of alignment marks 1 on the substrate P, at least as the alignment mark 1 of the instrumentation object of substrate alignment system 5 by supply nozzle 13 and reclaim nozzle 23 or optical element 2 belows.In view of the above, the 1st alignment mark 1 not by belows such as supply nozzle 13 be configured in the surveyed area of substrate alignment system 5.Thereby, just can prevent from disposing under the state of supply nozzle 13 LQ such as dripping such as grade the 1st alignment mark 1 is carried out instrumentation by substrate alignment system 5 trouble on the 1st alignment mark 1.

After the detection of the 1st alignment mark 1 finishes, control device CONT to-X side shifting, will also be configured in the surveyed area of substrate alignment system 5 by+the 2nd alignment mark 1 (for example accompanying the alignment mark 1 of shooting area S12 or S9 etc.) that the X side is provided with chip bench PST than the 1st alignment mark 1.Here, because the motion track of control device CONT decision chip bench PST is not so that arrive the surveyed area of substrate alignment system 5 by below such as supply nozzle 13 grades as the alignment mark 1 of instrumentation object, so after substrate P is loaded into chip bench PST, during the 2nd alignment mark 1 on this substrate P was configured in the surveyed area of substrate alignment system 5, the 2nd alignment mark 1 was not by below such as supply nozzle 13 grades.Thereby, just can prevent that configuration is from the trouble of supply nozzle 13 LQ such as dripping such as grade on the 2nd alignment mark 1.In addition, also can be by below such as supply nozzle 13 grades by the 1st alignment mark 1 of substrate alignment system 5 instrumentations.

Below same so, shown in Figure 11 (b), control device CONT will also carry out instrumentation by the surveyed area that the 3rd, the 4th alignment mark 1 of+X side setting is configured in substrate alignment system 5 in turn than the 2nd alignment mark 1.Above action is carried out based on exposure method control chip bench drive unit PSTD while the position of using laser interferometer 56 supervision chip bench PST by control device CONT.

In addition, though here be that control device CONT moves to chip bench PST-the X side, on the surveyed area of substrate alignment system 5 from the substrate P-alignment mark 1 of X side is configured in turn to the alignment mark 1 of+X side, but substrate alignment system 5 be arranged on projection optical system PL-situation of X side under, chip bench PST is moved to+the X side.In addition, the order of detection alignment mark 1 is not limited to the order along X-direction.In addition, as described above, a plurality of alignment marks 1 that do not need to be arranged on the substrate P all detect with substrate alignment system 5.Thereby, be not that the alignment mark 1 of the instrumentation object of substrate alignment system 5 also can be by below such as supply nozzle 13 grades.Generally speaking, as long as being configured in the alignment mark 1 of the surveyed area instrumentation object in the past of substrate alignment system 5, conduct do not pass through below such as supply nozzle 13 grades.

As described above, because control device CONT is according to the position relation of substrate alignment system 5 with supply nozzle 13 (and reclaiming nozzle 23, optical element 2), decide the motion track of the chip bench PST that is used on the surveyed area of substrate alignment system 5 configuration alignment mark 1, the trouble of attaching liq LQ so just can prevent below resulting from the alignment mark 1 with 5 instrumentations of substrate alignment system by supply nozzle 13 grades.Thereby, because the trouble of the alignment mark 1 of the state that has been attached of substrate alignment system 5 instrumentation liquid LQ prevented, so just can prevent the instrumentation mistake and miss instrumentation.Thereby, the running rate of exposure device EX is improved, and highly keep exposure accuracy.

In addition, when the illustrated execution mode of reference Figure 11, also can keep utilizing under the state of liquid LQ the detection of the alignment mark 1 of substrate alignment system 5 in the image planes side of projection optical system PL.In the case, though on chip bench PST (Z slide holder 52) or cross over above the chip bench PST and substrate P surface or form immersion liquid zone AR2 on substrate P surface, but as also can understanding by Figure 11, because the motion track of control device CONT decision chip bench PST detected with substrate alignment system 5 touch the liquid LQ (with reference to Fig. 1) of immersion liquid zone AR2 with the alignment mark 1 at substrate P before, so can prevent the trouble of the alignment mark 1 of the state that substrate alignment system 5 instrumentation liquid LQ have been attached.

In addition, though here be alignment mark 1 on the substrate P that is configured in before the surveyed area of substrate alignment system 5 by below such as supply nozzle 13 grades, also can determine the motion track of chip bench PST so that be configured in reference mark PFM before the surveyed area of substrate alignment system 5 by below such as supply nozzle 13 grades.Like this, be not limited to alignment mark 1 and reference mark PFM, motion track by decision chip bench PST is so that the parts below by liquid LQ is dripped not of the mark (instrumentation object) on the chip bench PST of institute's instrumentation under the drying regime, just can improve not the mark instrumentation precision via liquid LQ.

In addition, though in the above-described embodiment, just with chip bench PST when substrate is changed position RP and is moved near the projection optical system PL (exposure-processed position EP), or the motion track of the chip bench PST when carrying out a plurality of alignment mark 1 on the substrate P is illustrated, but preferably at instrumentation after reference mark PFM, the MFM on the reference component 3, alignment mark 1 during alignment mark 1 on instrumentation substrate P etc. on the substrate P decides the motion track of chip bench PST so also by below supply nozzle 13 grades.For example, in Figure 12, when using mask alignment system 6 to come reference mark MFM on the instrumentation reference component 3 via liquid LQ, control device CONT is instrumentation reference mark MFM under the state that has formed immersion liquid zone AR2 on the reference component 3.Then, after the instrumentation via liquid LQ of reference mark MFM finished, control device CONT used liquids recovery mechanism 20 to wait the liquid LQ that reclaims on the reference component 3.Afterwards, during the alignment mark 1 of control device CONT on the surveyed area of substrate alignment system 5 configuration substrate P, on one side monitoring laser interferometer 56 output on one side mobile XY slide holder 53 so that supply nozzle 13 grades advance along the dotted arrow K of Figure 12.Then, control device CONT disposes the 1st alignment mark 1 (for example accompanying the alignment mark 1 of shooting area S10) at the surveyed area of substrate alignment system 5.In the case, owing to do not pass through below such as supply nozzle 13 grades with the alignment mark 1 before 5 instrumentations of substrate alignment system, so can not adhere to from supply nozzle 13 LQ such as dripping such as grade.

In addition, become under the situation that detects mistake at attaching liq on the alignment mark 1, detect wrong situation with adhere to foreign matter on alignment mark 1 same, both can end the detection of this alignment mark, replace and detect near its alignment mark, also this substrate P itself can be handled as defective substrate.

In addition, resulting marker image and signal waveform store in advance in the time of can also be with the alignment mark that detects under drying regime with substrate alignment system 5 on the substrate P, resulting marker image and/or signal waveform when reality detects alignment mark 1 with substrate alignment system 5, under the situation about differing widely with the data of storing, be judged as at the optical element of substrate alignment system 5 ends and at least one side of alignment mark and be attached with liquid, and output detects wrong to urge operator etc. to wipe accompanying liquid etc.

Equally, can also with substrate alignment system 5 under drying regime during instrumentation reference mark PFM resulting marker image and signal waveform store, when instrumentation of baseline amount etc. under the actual obtained marker image and/or signal waveform and the data of storing situation about differing widely with substrate alignment system 5 reference mark PFM, be judged as at the optical element of substrate alignment system 5 ends and at least one side of reference mark PFM and be attached with liquid, and output detects wrong to urge operator etc. to wipe accompanying liquid etc.

In addition, marker image of being stored and signal waveform both can use substrate alignment system 5 to obtain in exposure device EX, also can obtain outside exposure device EX.

In addition, chip bench PST shown in Figure 12 is provided with for example disclosed illumination unevenness sensor 400 of the clear 57-117238 communique of Japan Patent Publication Laid-Open and for example disclosed aerial image measurement sensor 500 of Japan Patent Publication Laid-Open 2002-14005 communique.And, consider that the state Bian that has formed immersion liquid zone AR2 at these instrumentations on transducer 400,500 carries out the instrumentation processing via liquid LQ.Also be control device CONT in the case after the instrumentation that utilizes transducer 400,500 of being through with is handled, use liquids recovery mechanism 20 grades to carry out liquids recovery.And, when the alignment mark on the substrate P 1 is configured in the surveyed area of substrate alignment system 5, the motion track of control device CONT decision chip bench PST so that as the alignment mark 1 on the substrate P of the instrumentation object of substrate alignment system 5 by below such as supply nozzle 13 grades.

Figure 13 is the schematic diagram of other execution modes of expression the present invention.Exposure device EX possesses the absorption maintaining body 90 that is used for absorption maintenance substrate P on substrate frame PSH in Figure 13 (a).Absorption maintaining body 90 possesses the adsorption hole 91 of the top a plurality of positions that are separately positioned on substrate frame PSH and is connected respectively to the vacuum system 93 of these a plurality of adsorption holes 91 via stream 92.Control device CONT carries out the vacuum suction maintenance by driving vacuum system 93 via the back side of the substrate P of the top institute mounting of 91 couples of substrate frame PSH of adsorption hole.

The information relevant with the pressure of stream 92 that adsorbs maintaining body 90 or vacuum system 93 is monitored by pressure detector 94.Pressure detector 94 can detect whether keeping substrate P (perhaps illusory substrate DP) based on the information relevant with the pressure that is detected on substrate frame PSH.Promptly, pressure detector 94 is performed in the absorption action that utilizes absorption maintaining body 90, under the not low situation of pressure, is judged as do not keep substrate P on substrate frame PSH, next being judged as of situation of having reduced at pressure keeping substrate P on substrate frame PSH.In addition, the testing result of pressure detector 94 and judged result are output to control device CONT.

In the way of the supply pipe 12 of liquid feed mechanism 10, be provided with the valve 14 of the passage opening/closing that makes supply pipe 12.The action controlled device CONT of valve 14 controls.

Like that, when substrate P was maintained on the substrate frame PSH, pressure detector 94 can detect based on pressure-dependent information and keep substrate P on substrate frame PSH as described above shown in Figure 13 (a).Then, when pressure detector 94 detects substrate P, control device CONT based on the testing result (judged result) of pressure detector 94 to liquid feed mechanism 10 send can feed fluid instruction.

On the other hand, shown in Figure 13 (b), when substrate P was not maintained on the substrate frame PSH, pressure detector 94 can detect based on pressure-dependent information and not keep substrate P on substrate frame PSH.Then, when pressure detector 94 does not detect substrate P, control device CONT based on the testing result (judged result) of pressure detector 94 to liquid feed mechanism 10 send can not feed fluid instruction.The liquid feed mechanism 10 that receives the instruction of control device CONT is for example closed the stream of supply pipe 12 by valve 14.Control device CONT stops to utilize the liquid of liquid feed mechanism 10 to supply with like this.

As described above, do not remain under the state of substrate frame PSH at substrate P or illusory substrate DP, if form immersion liquid zone AR2 or utilize the liquid supply of liquid feed mechanism 10 to be performed, inner and the inner possibility that immerses liquid LQ of chip bench PST at substrate frame PSH is just arranged, for example if liquid LQ immerses chip bench PST inside then can be made it to get rusty or break down at the electric equipment and the sliding part that are disposed at inside, reparation will need many times.Perhaps, as if the maintenance face retain liquid LQ at substrate frame PSH, liquid LQ flows into vacuum systems 93 via adsorption hole 91 trouble will take place.In addition, if liquid LQ is attached to the maintenance face of substrate frame PSH, this liquid LQ brings into play function as lubricating film in the time of also can occurring in substrate P by mounting, with substrate P with respect to desirable position deviation state under the trouble that keeps.Thereby, as present embodiment, by whether remaining in the action that substrate frame PSH comes controlling liquid feed mechanism 10 according to substrate P or illusory substrate DP, just can prevent the maintenance face of liquid LQ attached to substrate frame PSH, perhaps liquid is immersed in the inside of chip bench PST.And, when substrate P or illusory substrate DP do not remain in substrate frame PSH, stop to utilize the liquid of liquid feed mechanism 10 to supply with by control device CONT, just can prevent the inside of liquid immersion chip bench PST etc.

In addition, though in the present embodiment, judge based on the testing result of pressure detector 94 whether substrate P or illusory substrate DP remain on the substrate frame PSH, the substrate of contact has or not transducer but also can for example be provided with on chip bench PST and/or substrate frame PSH, and comes the action of controlling liquid feed mechanism 10 based on its testing result.Perhaps, can also use aforesaid focus detection system 4 to judge whether substrate P or illusory substrate DP remain on the substrate frame PSH, and come the action of controlling liquid feed mechanism 10 based on this result.In addition, can also forbid that Z slide holder 52 (chip bench PST) moves so that immersion liquid zone AR2 is not formed on the Z slide holder 52 (chip bench PST) to the below of supply nozzle 13 and recovery nozzle 23 or optical element 2 at substrate P (perhaps illusory substrate DP) when not remaining in substrate frame PSH.

In addition, control device CONT can also change the movable area of chip bench PST according to the testing result of pressure detector 94.As the illustrated execution mode of reference Figure 13, at substrate P (perhaps illusory substrate DP) when not remaining in substrate frame PSH, even if having stopped utilizing the liquid of liquid feed mechanism 10 supplies with, also have residual, attached to supply nozzle 13 and reclaim nozzle 23 or the liquid LQ of the optical element 2 of projection optical system PL drips, and the possibility that immerses the inner and chip bench PST inside of substrate frame PSH.In the case also with cause the electric equipment of chip bench PST inside electric leakage, it is got rusty or liquid LQ flows into vacuum systems 93 or brings into play function at the maintenance face dripping LQ of substrate frame PSH as lubricating film via adsorption hole 91, and with respect to desired position deviation state under keep trouble such as substrate P.Thereby control device CONT is according to detecting the movable area that testing result that whether substrate P remain on the detector 94 on the substrate frame PSH changes chip bench PST.

Particularly, at substrate P (perhaps illusory substrate DP) when not remaining in substrate frame PSH, in other words, when pressure detector 94 does not detect substrate P, control device CONT is made as the zone that substrate frame PSH is not positioned at supply nozzle 13 and reclaims nozzle 23 or optical element 2 belows with the movable area of chip bench PST.And control device CONT does not remain at substrate P under the situation of substrate frame PSH, on one side monitoring laser interferometer 56 output on one side mobile substrate platform PST so that substrate frame PSH by below such as supply nozzle 13 grades.So, even if hypothesis liquid LQ drips from supply nozzle 13 grades, can prevent that also liquid LQ from immersing the inside of substrate frame PSH and the inside of chip bench PST etc.

In addition, though in the above-described embodiment, when on chip bench PST, forming immersion liquid zone AR2, begin from supply nozzle 13 feed fluid LQ, but can also not to be recovered in the liquid that is kept between the regulation object that is different from chip bench PST and the projection optical system PL, the immersion liquid zone AR2 that is formed on this regulation object is moved on the chip bench PST, on chip bench PST, form immersion liquid zone AR2 thus.

In addition, though in the above-described embodiment, not via alignment mark 1 and reference mark PFM on the liquid ground detection substrate P, the detection of reference mark MFM is then carried out via liquid, but the invention of the lyophobyization on relevant reference component 3 surfaces, the no difference in heightization above the reference component 3, the use of illusory substrate DP etc., both applicable to the situation that has adopted the such formation of detection reference mark PFM and reference mark MFM simultaneously, also applicable to the alignment mark 1 and the such situation of reference mark PFM that detect via liquid on the substrate P.Exposure device such as the such formation of simultaneously detection reference mark PFM and reference mark MFM, for example at the flat 4-45512 of Japan Patent Publication Laid-Open number (corresponding United States Patent (USP) the 5th, 138,176) disclosed etc., home in the scope that decree allowed of the specified or selected country of border application, quote their disclosure and as a part described herein.

In addition, when separating on the reference component 3 under the situation that immersion liquid is regional and non-immersion liquid zone forms, can also be as the flat 4-45512 communique of Japan Patent Publication Laid-Open to be disclosed, employing can be carried out the detection of no liquid of reference mark PFM and the such formation of the detection that liquid is arranged of reference mark MFM simultaneously.In the case, for example in aligning order shown in Figure 6, owing to carrying out step SA3 and step SA4 simultaneously, so favourable on the production capacity this point.Further again, self-evident under the situation of substrate alignment system 5 via the formation of alignment mark 1 on the liquid detection substrate P and reference mark PFM, can also be as the flat 4-45512 communique of Japan Patent Publication Laid-Open to be disclosed, employing can be carried out the detection of reference mark PFM and the such formation of detection of reference mark MFM simultaneously.

In addition, though in the above-described embodiment, these two reference marks of reference mark PFM and reference mark MFM are set on reference component, can also use single reference mark (benchmark) to carry out step SA3 and step SA4.

As described above, the liquid LQ in the present embodiment has used pure water.Pure water can easily obtain in semiconductor fabrication factory etc. in a large number, also has not the dysgenic advantage for photoresist on the substrate P (photoresist) or optical element (lens) etc. simultaneously.In addition, for the harmful effect of environment, the amount of impurity is extremely not low simultaneously for pure water, so can also expect the surface of substrate P and be arranged at the effect that the surface of optical element of the front end face of projection optical system PL is cleaned.Under the lower situation of the purity of this external pure water of supplying with from factory etc., can also make exposure device hold ultra-pure water and make device.

And, pure water (water) is that the refractive index n of the exposing beam EL of 193nm degree is considered to roughly about 1.44 with respect to wavelength, penetrate under the situation of light (wavelength 193nm) as the light source of exposing beam EL utilizing the ArF exciplex to swash, on substrate P with 1/n, promptly about 134nm degree is by the short wavelengthization and obtain higher resolution.And then, compare in the depth of focus and the air extended about n doubly, i.e. about 1.44 times of degree, so under the situation that the situation that can guarantee and use in air gets final product with the depth of focus of degree, the numerical aperture of projection optical system PL is further increased, and resolution also will be improved in this.

In addition, under the situation of having used immersion method as described above, the numerical aperture NA of projection optical system just is 0.9～1.3 sometimes.Under the such numerical aperture NA of projection optical system becomes big situation and since always as exposing beam in the used random polarization sometimes imaging performance worsen because of polarization effect, so wish to use polarization illumination.In the case, carry out at the line of mask (netting twine) and the straight line polarization illumination of length direction (vertically) through adjusting of the line pattern of (line-and-space) pattern at interval, so that the diffraction light that penetrates many S polarized components (the polarization direction composition of the length direction of pattern along the line) from the pattern of mask (netting twine) is for well.Because situation about being full of with liquid between the resist that is coated with on projection optical system PL and substrate P surface, with the resist that is coated with on projection optical system PL and substrate P surface between situation about being full of with air (gas) compare, help the transmitance of diffraction light on the resist surface of the S polarized component that contrast improves to uprise, so also can obtain higher imaging performance even if surpass under 1.0 such situations at the numerical aperture NA of projection optical system.In addition, if then more produce effect through the oblique incidence illumination suitable combinations of adjusting such as (especially dipole illuminations) with phase shift (phase shifts) mask with such as the disclosed length direction of the flat 6-188169 communique of Japan Patent Publication Laid-Open at line pattern.

In addition, be not only the straight line polarization illumination (S polarization illumination) of length direction, as the flat 6-53120 communique of Japan Patent Publication Laid-Open is disclosed, carry out the polarization illumination method of straight line polarization and the combination of oblique incidence illumination also produces effect in tangent line (circumference) direction that with the optical axis is the circle at center through adjusting at the line pattern of mask (netting twine).Particularly be not only the line pattern of the pattern of mask (netting twine) in a certain direction extension of regulation, mix under the situation about existing at the line pattern that extends along a plurality of different directions, it is same as the flat 6-53120 communique of Japan Patent Publication Laid-Open is disclosed, by and to be used in the optical axis be that the tangential direction of circle at center is carried out the polarization illumination method and the banded illumination of straight line polarization, even if under the bigger situation of the numerical aperture NA of projection optical system, also can obtain higher imaging performance.

At projection optical system PL front end optical element 2 is installed in the present embodiment, and can carries out the optical characteristics of projection optical system PL, the adjustment of for example aberration (spherical aberration, coma aberration etc.) by means of its lens.In addition, as the optical element that is installed on projection optical system PL front end, also can be used optical sheet in the optical characteristics of projection optical system PL is adjusted.It perhaps can also be the planopaallel plate that can see through exposing beam EL.Be made as planopaallel plate by the optical element that will contact than lens cheapness with liquid LQ, even when the carrying of exposure device EX, assembling, adjustment etc., adhere to the material that the homogeneity of the transmission coefficient that makes projection optical system PL, the illumination of exposing beam EL on the substrate P and Illumination Distribution reduces (for example silicon type organic etc.) at this planopaallel plate, only changed this planopaallel plate and get final product before feed fluid LQ, the situation that is made as lens compared with the optical element that will contact with liquid LQ has the advantage of its replacement cost step-down and so on.Promptly, because the surface of the optical element that resulting from by the irradiation of exposing beam EL makes dirty adhering to of impurity from disperse particle or liquid LQ that resist takes place etc. contacts with liquid LQ, so need change this optical element termly, by this optical element being made as cheap planopaallel plate, compare the cost step-down that just can make the replacing parts with lens, and can make and change the desired time and shorten, can also suppress the low of the rising of maintenance cost (operating cost) and production capacity.

In addition, under the optical element of the projection optical system PL front end produced because of flowing of liquid LQ and the bigger situation of the pressure between the substrate P, can also not replaceable this optical element but firmly fix optical element so that it can be because of this pressure activity.

In addition, though between projection optical system PL and substrate P surface, be the formation that is full of with liquid LQ in present embodiment, also can be for example in the mounted on surface of substrate P the constituting of full of liquid LQ under the state of the cover glass formed by planopaallel plate.

In addition, though the optical path space of having used the exposure device of above-mentioned immersion method and being the emitting side of the terminal optical element 2 of projection optical system PL is full of the formation of exposing to wafer substrate P in the back with liquid (pure water), but can also as international disclose No. 2004/019128 disclosed, also use liquid (pure water) to be full of the optical path space of the light incident side of the terminal optical element 2 of projection optical system PL.

In addition, though the liquid LQ of present embodiment is a water, also can be the liquid beyond the water, for example, be F at the light source of exposing beam EL ₂Under the situation of laser, because this F ₂Swash and to penetrate not permeate water of light, so can also be to see through F as liquid LQ ₂Swash for example mistake fluorinated polyether (PFPE) and the fluorine class wet goods fluorine class fluid of penetrating light (laser beam).In this case, form film in the part that contacts with liquid LQ by material and carry out the lyophily processing with the less molecular configuration of the polarity that comprises fluorine for example.In addition, as liquid LQ, can also use in addition have for the permeability of exposing beam EL and refractive index is high as far as possible, to the stable liquid of the photoresist coated (red deal oil for example: cedaroil) on projection optical system PL and substrate P surface.Surface treatment is also carried out according to the polarity of used liquid LQ in the case.

In addition; substrate P as the respective embodiments described above; be not only the semiconductor wafer of semiconductor device manufacturing usefulness, the glass substrate that also applicable display device is used or, the ceramic substrate used of film magnetic head or used mask or master (synthetic quartz, silicon wafer) of netting twine etc. in exposure device.

As exposure device EX, except the scanning exposure apparatus (scanning stepper) of step-scan (step-and-scan) mode of the pattern of mask M being carried out scan exposure with moved further mask M and substrate P, can also be applicable to making under the static state of mask M and substrate P the pattern of mask M is summed up exposure, make substrate P successively the stepping stepping of moving repeat the projection aligner (stepper) of (step-and-repeat) mode.In addition, the present invention can also be applicable to the exposure devices of two overlapping steppings of carrying out transfer printing in pattern part ground being sewed up (step-and-stitch) mode on substrate P at least.

In addition, the present invention can also be applicable to the exposure device of double-workbench (twin-stage) formula that possesses two slide holders that processed substrates such as wafer carried out mounting respectively and can be on the XY direction move independently.The structure of the exposure device of double-workbench formula and exposure actions are for example at the flat 10-163099 of Japan Patent Publication Laid-Open number and the flat 10-214783 of Japan Patent Publication Laid-Open number (corresponding United States Patent (USP) 6,341,007; 6,400,441; 6,549,269 and 6,590,634), 2000-505958 number (corresponding United States Patent (USP) 5 of the special table of Japanese patent publication, 969,441) or in the United States Patent (USP) 6,208,407 disclosed, home in the scope that decree allowed of the specified or selected country of border application, quote their disclosure and as a part described herein.

In the exposure device of the double-workbench formula that possesses two slide holders, exposure position (exposure station) that carries out the substrate exposure and the aligned position (alignmen station) that carries out the contraposition of on-chip shooting area are set independently sometimes.In the case, for production capacity improves, the substrate on the 1st slide holder is when exposure position is exposed, and the substrate on the 2nd slide holder is aligned at aligned position.Then, through after aiming at, the 2nd slide holder moves to exposure position at the substrate on the 2nd slide holder, and the substrate that has passed through contraposition at aligned position is carried out exposure at exposure position.At this moment, substrate on the 2nd slide holder aligned position find the solution the illustrated mistake of aforementioned embodiments with respect to the relative position that is arranged on the reference mark on the chip bench, when the 2nd slide holder is moved to exposure position, also reference mark is decided image space as benchmark then at exposure position.Thereby, in the exposure device of double-workbench formula, on exposure and aligned position, be effectively used in the reference mark of the illustrated mistake of aforementioned embodiments.

In addition, though adopt the exposure device that between projection optical system PL and substrate P, is full of with liquid partly in the above-described embodiment, in the immersion exposure device that the surface of the substrate of exposure object all covers with liquid, also can be suitable for the present invention.The structure of the immersion exposure device that the surface of the substrate of exposure object all covers with liquid and exposure actions are for example in the flat 6-124873 communique of Japan Patent Publication Laid-Open, the flat 10-303114 communique of Japan Patent Publication Laid-Open, rice state patent the 5th, 825, put down in writing in detail in No. 043 grade, home in the scope that is allowed in the decree of the specified or selected country of border application, quote the record content of the document and as a part described herein.

In addition, the present invention can also be applicable to and possess: keep processed substrate and transportable exposure worktables such as wafer; Exposure device with the instrumentation workbench that comprises instrumentation parts such as various reference components and measurement sensor.In the case, can be configured on the instrumentation workbench being disposed at the reference component of chip bench PST and at least a portion of various measurement sensors in the above-described embodiment.The exposure device that possesses exposure worktable and instrumentation workbench is for example put down in writing in the flat 11-135400 of Japan Patent Publication Laid-Open number, home in the scope that is allowed in the decree of the specified or selected country of border application, quote the record content of the document and as a part described herein.

Kind as exposure device EX, be not limited to the exposure device of the semiconductor element manufacturing usefulness of exposure semiconductor element pattern on substrate P, the liquid crystal display cells manufacturing with or the exposure device of display manufacturing usefulness and the being used for exposure device etc. of making film magnetic head, imaging apparatus (CCD) or netting twine or mask etc. also can extensively be suitable for.

In chip bench PST or mask platform MST, use under the situation of linear motor, also can use the air floating type that has utilized air bearing and utilized Lorentz force or the magnetic suspension type of reactance power in a certain.In addition, each workbench PST, MST both can be the types that moves along guide rail, also can be the nothing guiding types that guide rail is not set.The example that utilizes linear motor in workbench is at United States Patent (USP) 5,623, and 853 and 5,528, disclose in 118, home in the scope that is allowed in the decree of the specified or selected country of border application, quote the record content of these documents respectively and as a part described herein.

As the driving mechanism of each workbench PST, MST, can also use with two-dimensional arrangement the magnet unit of magnet and two-dimensional arrangement the armature unit of coil opposed, and drive the planar motors of each workbench PST, MST by electromagnetic force.In this case, a certain side in magnet unit and the armature unit is connected to workbench PST, MST, the all-moving surface side that the opposing party of magnet unit and armature unit is arranged at workbench PST, MST gets final product.

Not pass to projection optical system PL in order making, can to use frame parts mechanically to be discharged into ground (the earth) yet because of the reaction force that takes place that moves of chip bench PST.The processing method of this reaction force, for example, at United States Patent (USP) 5,528, at length disclose in 118 (the flat 8-166475 communiques of Japan Patent Publication Laid-Open), home in the scope that is allowed in the decree of the specified or selected country of border application, quote the record content of this document and as a part described herein.

Not pass to projection optical system PL in order making, can to use frame parts mechanically to be discharged into ground (the earth) yet because of the reaction force that takes place that moves of mask platform MST.The processing method of this reaction force, for example, at United States Patent (USP) the 5th, 874, at length disclose in 820 (the flat 8-330224 communiques of Japan Patent Publication Laid-Open), home in the scope that is allowed in the decree of the specified or selected country of border application, quote the disclosure of this document and as a part described herein.

As described above, the exposure device EX of the application's execution mode makes with the mechanical precision of guaranteeing to stipulate, electric precision, optical accuracy by the various subsystems that assembling comprises each inscape of enumerating in the scope of the application's patent requirement.In order to ensure these various precision, before and after this assembling, carry out for the adjustment that reaches optical accuracy, carry out for the adjustment that reaches mechanical precision, carry out in order to reach the adjustment of electric precision for various electrical systems for various machinery system for various optical systems.Assembling procedure from various subsystems to exposure device comprises the distribution connection of the mutual mechanical connection of various subsystems, electric circuit, the pipe arrangement connection of air pressure circuit etc.Self-evident at various subsystems from then on before the assembling procedure of exposure device, each subsystem assembling procedure is separately arranged.In case various subsystems finish to the assembling procedure of exposure device, just comprehensively adjust, and guarantee the various precision as exposure device integral body.In addition, the manufacturing of exposure device is preferably carried out in the clean room of having managed temperature and cleannes etc.

The micro element of semiconductor device etc. is made through following steps as shown in figure 14,, carries out the function of micro element, the step 201 of performance design that is; Making is based on the step 202 of the mask (netting twine) of this design procedure; Manufacturing is as the step 203 of the substrate of the base material of device; Exposure device EX by aforementioned embodiments exposes the pattern of mask on substrate exposure-processed step 204; Device number of assembling steps (comprising cutting action, bond sequence, packaging process) 205 and inspection step 206 etc.

Utilizability on the industry

According to the present invention, just can accurately carry out registration process, so just can precision good Ground forms desirable pattern at substrate. In addition, can also prevent that liquid is in chip bench The immersions such as section.

Claims (27)

1. one kind is mapped on the substrate via the illumination that will expose of optical system and liquid, and the exposure device of the above-mentioned substrate that exposes thus is characterized in that possessing:

Keep above-mentioned substrate and transportable chip bench;

Detect the above-mentioned on-chip alignment mark that is kept on the above-mentioned chip bench, and detect the 1st detection system that is arranged at the benchmark on the above-mentioned chip bench; And

Be arranged at the 2nd detection system of the said reference on the above-mentioned chip bench via above-mentioned optical system detection,

Wherein, use above-mentioned the 1st detection system not detect the benchmark that is arranged on the above-mentioned chip bench via liquid ground, and use above-mentioned the 2nd detection system to detect the benchmark that is arranged on the above-mentioned chip bench via above-mentioned optical system and liquid, position relation with the detection reference position of obtaining above-mentioned the 1st detection system and the picture that utilizes above-mentioned optical system to form

Utilize of the detection of above-mentioned the 1st detection system, do not carry out via liquid ground to the positional information of above-mentioned alignment mark.

2. according to the described exposure device of claim 1, it is characterized in that:

Use above-mentioned the 1st detection system to detect the positional information that is formed on above-mentioned on-chip a plurality of alignment marks, and, carry out the exposure of above-mentioned substrate based on using detected positional information of above-mentioned the 1st detection system and above-mentioned detection reference position and utilizing the position relation of the picture of above-mentioned optical system formation to make above-mentioned substrate contraposition.

3. according to the described exposure device of claim 1, it is characterized in that:

Above-mentioned chip bench has the substrate frame that is used to keep above-mentioned substrate, is keeping on the above-mentioned substrate frame under the state of above-mentioned substrate or illusory substrate, utilizes above-mentioned the 2nd detection system to detect the benchmark that is arranged at above-mentioned chip bench.

4. according to the described exposure device of claim 1, it is characterized in that:

Said reference comprises the 1st benchmark that detects with above-mentioned the 1st detection system and the 2nd benchmark that detects with above-mentioned the 2nd detection system, and the 1st benchmark and the 2nd benchmark concern isolation configuration with the position of regulation.

5. according to the described exposure device of claim 4, it is characterized in that:

Utilize above-mentioned the 1st detection system to the detection of the 1st benchmark with utilize above-mentioned the 2nd detection system that the detection of the 2nd benchmark is carried out simultaneously.

6. according to the described exposure device of claim 1, it is characterized in that also possessing:

Jet element with a certain at least side among the recovery mouth of the supply port of feed fluid and withdrawal liquid;

Control device, this control device decides the motion track of above-mentioned chip bench according to above-mentioned the 1st detection system and said nozzle position component relation, wherein, the motion track of above-mentioned chip bench is used for the above-mentioned alignment mark of configuration on the surveyed area of above-mentioned the 1st detection system.

7. according to the described exposure device of claim 6, it is characterized in that:

Above-mentioned control device determines the motion track of above-mentioned chip bench so that be configured in the below that the surveyed area above-mentioned alignment mark in the past of above-mentioned the 1st detection system does not pass through the said nozzle parts.

8. one kind is mapped on the substrate via the liquid illumination that will expose, and the exposure device of the above-mentioned substrate that exposes thus is characterized in that possessing:

Have the substrate frame that keeps above-mentioned substrate, on above-mentioned substrate frame, keep above-mentioned substrate and transportable chip bench;

Detect the 1st detection system of the above-mentioned on-chip alignment mark that is kept on the above-mentioned chip bench; And

Detect the 2nd detection system of the benchmark that is arranged on the above-mentioned chip bench via liquid,

Wherein, when stating the 2nd detection system in the use and detecting the benchmark that is arranged on the above-mentioned chip bench via liquid, on above-mentioned substrate frame, dispose illusory substrate, use above-mentioned the 1st detection system not detect above-mentioned on-chip alignment mark via liquid, and, carry out the exposure of above-mentioned substrate via liquid according to the detection of being undertaken by above-mentioned the 1st detection system and the 2nd detection system.

9. according to claim 1 or 8 described exposure devices, it is characterized in that:

Above-mentioned the 2nd detection system is carried out the detection of the benchmark on the above-mentioned chip bench via having the mask that is used for pattern that above-mentioned substrate is exposed.

10. according to claim 1 or 8 described exposure devices, it is characterized in that:

Said reference forms on the reference component that is disposed on the above-mentioned chip bench, when detecting the benchmark that is formed on the said reference parts with above-mentioned the 2nd detection system, and full of liquid on the said reference parts.

11., it is characterized in that according to the described exposure device of claim 10:

There is not difference in height above the said reference parts.

12., it is characterized in that according to the described exposure device of claim 10:

Top at least a portion of said reference parts has lyophobicity.

13. a device making method uses claim 1 or 8 described exposure devices.

14. one kind is mapped on the substrate via the illumination that will expose of optical system and liquid, the exposure method of the above-mentioned substrate that exposes thus is characterized in that:

Use the 1st detection system not detect the positional information of above-mentioned on-chip alignment mark via liquid;

Use above-mentioned the 1st detection system not detect the positional information of the benchmark on the chip bench that keeps above-mentioned substrate via liquid;

After the detection both sides of the positional information of the detection of the positional information of the above-mentioned alignment mark that utilizes above-mentioned the 1st detection system and the benchmark on the above-mentioned chip bench finish, use the 2nd detection system to detect benchmark on the above-mentioned chip bench via above-mentioned optical system and liquid; And

Testing result based on the positional information of the above-mentioned alignment mark that utilizes above-mentioned the 1st detection system, utilize the testing result of the positional information of the benchmark on the above-mentioned chip bench of above-mentioned the 1st detection system, testing result with the positional information of benchmark on the above-mentioned chip bench that utilizes above-mentioned the 2nd detection system, obtain the detection reference position of above-mentioned the 1st detection system and the relation of the picture that utilizes above-mentioned optical system to form, and utilize the contraposition of picture that above-mentioned optical system forms and above-mentioned substrate, projection utilizes picture that above-mentioned optical system forms to expose successively on each of above-mentioned on-chip a plurality of shooting areas.

15., it is characterized in that according to the described exposure method of claim 14:

After the exposure of above-mentioned substrate is finished, other substrate remained on expose on the above-mentioned chip bench when, do not carry out the detection of the positional information of the benchmark on the above-mentioned chip bench, and be to use the 1st detection system to detect the positional information of above-mentioned other on-chip alignment mark, and based on the positional information of using detected above-mentioned other the on-chip alignment mark of above-mentioned the 1st detection system, and the detection reference position of above-mentioned the 1st detection system and the above-mentioned relation of utilizing the picture that above-mentioned optical system forms, on each of above-mentioned other on-chip a plurality of shooting areas successively the above-mentioned pattern image of projection with above-mentioned other substrate that exposes.

16., it is characterized in that according to the described exposure method of claim 14:

Concern isolation configuration with the 1st benchmark on the above-mentioned chip bench of above-mentioned the 1st detection system detection with the 2nd benchmark on the above-mentioned chip bench of above-mentioned the 2nd detection system detection with the position of stipulating.

17., it is characterized in that according to the described exposure method of claim 14:

After the exposure of the above-mentioned substrate that is through with, this substrate is remained under the state on the above-mentioned chip bench, utilize the benchmark on the above-mentioned chip bench of above-mentioned the 1st detection system positional information detection and utilize the detection of the positional information of the benchmark on the above-mentioned chip bench of above-mentioned the 2nd detection system, after the detection that utilizes above-mentioned the 1st detection system and utilizing the detection of above-mentioned the 2nd detection system to be through with, above-mentioned substrate is taken out of from chip bench.

18. one kind is mapped on the substrate via the liquid illumination that will expose, the exposure method of the above-mentioned substrate that exposes thus is characterized in that may further comprise the steps:

Detect by the above-mentioned on-chip alignment mark that chip bench kept that is provided with benchmark and substrate frame with the 1st detector;

Having disposed on the above-mentioned substrate frame under the state of illusory substrate, detect said reference via liquid with the 2nd detector; And

Based on the testing result of the 1st and the 2nd detector with substrate and pattern image contraposition, with the pattern image substrate that exposes,

Wherein, utilize above-mentioned the 1st detector above-mentioned alignment mark not to be detected via liquid ground.

19. a device making method uses claim 14 or 18 described exposure methods.

20. one kind will be mapped on the above-mentioned substrate with the predetermined pattern illumination that exposes accordingly via optical system and on-chip liquid, the exposure device of the above-mentioned substrate that exposes thus is characterized in that possessing:

The 1st detection system does not detect above-mentioned on-chip alignment mark via aforesaid liquid ground; And

Measurement system, instrumentation are formed on the detection reference position of above-mentioned on-chip picture, above-mentioned the 1st detection system when not detecting above-mentioned alignment mark via aforesaid liquid ground via above-mentioned optical system and above-mentioned on-chip liquid position concerns.

21., it is characterized in that also possessing according to the described exposure device of claim 20:

Movable part possesses the detected benchmark of available above-mentioned the 1st detection system, and can be in the available detected position of above-mentioned the 1st detection system with via mobile said reference between the position on the light path of light of above-mentioned optical system and above-mentioned on-chip liquid; And

The 2nd detection system detects the benchmark of above-mentioned movable part via above-mentioned optical system and aforesaid liquid,

Wherein, information when above-mentioned measurement system uses and do not detect the benchmark of above-mentioned movable part via aforesaid liquid ground by above-mentioned the 1st detection system and the information when detecting the benchmark of above-mentioned movable part by above-mentioned the 2nd detection system via above-mentioned optical system and aforesaid liquid, the above-mentioned position of coming instrumentation to be formed on the detection reference position of above-mentioned on-chip picture and above-mentioned the 1st detection system via above-mentioned optical system and above-mentioned on-chip liquid concerns.

22., it is characterized in that also possessing according to the described exposure device of claim 21:

The movable part position detecting system detects the position of above-mentioned movable part,

Wherein, the positional information of the positional information of the above-mentioned movable part when above-mentioned measurement system uses and do not detect the benchmark of above-mentioned movable part via aforesaid liquid ground by above-mentioned the 1st detection system and the above-mentioned movable part when detecting the benchmark of above-mentioned movable part by above-mentioned the 2nd detection system via above-mentioned optical system and aforesaid liquid, the above-mentioned position of coming instrumentation to be formed on the detection reference position of above-mentioned on-chip picture and above-mentioned the 1st detection system via above-mentioned optical system and above-mentioned on-chip liquid concerns.

23., it is characterized in that according to claim 21 or 22 described exposure devices:

Above-mentioned the 1st detection system detect above-mentioned on-chip alignment mark or above-mentioned movable part said reference, with the relative position information of above-mentioned detection reference position.

24. a device making method may further comprise the steps:

Use in the claim 20 to 23 any described exposure device to be mapped on the above-mentioned substrate with the device pattern illumination that exposes accordingly.

25. one kind will be mapped on the above-mentioned substrate with the predetermined pattern illumination that exposes accordingly via optical system and on-chip liquid, the exposure method of the above-mentioned substrate that exposes thus is characterized in that may further comprise the steps:

Use the 1st detection system not detect above-mentioned on-chip alignment mark via aforesaid liquid ground;

The position of obtaining the detection reference position that is formed on above-mentioned on-chip picture, above-mentioned the 1st detection system when not detecting above-mentioned alignment mark via aforesaid liquid ground via above-mentioned optical system and above-mentioned on-chip liquid concerns; And

To be detected the substrate of above-mentioned alignment mark, according to above-mentioned position relation to via the light-struck position of exposure of above-mentioned optical system and above-mentioned on-chip liquid move.

26., it is characterized in that according to the described exposure method of claim 25:

Use above-mentioned the 1st detection system not via aforesaid liquid detect benchmark, wherein, this benchmark can be in the available detected position of above-mentioned the 1st detection system with via moving between the position on the light path of light of above-mentioned optical system and above-mentioned on-chip liquid;

Detect said reference via above-mentioned optical system and aforesaid liquid; And

Information when use does not detect said reference via aforesaid liquid by above-mentioned the 1st detection system and the information when detecting said reference via above-mentioned optical system and aforesaid liquid come instrumentation to be formed on above-mentioned position relation between the detection reference position of above-mentioned on-chip picture and above-mentioned the 1st detection system via above-mentioned optical system and above-mentioned on-chip liquid.

27., it is characterized in that according to the described exposure method of claim 26:

Above-mentioned the 1st detection system detects the relative position information between above-mentioned on-chip alignment mark or said reference that can move and the above-mentioned detection reference position.

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