CN100487928C - Conductive and insulating quasi gallium nitride base growing substrate and manufacturing method thereof - Google Patents
Conductive and insulating quasi gallium nitride base growing substrate and manufacturing method thereof Download PDFInfo
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Abstract
This invention discloses several different structured conducting and insulating quasi-GaN base growing substrates grown on a silicon substrate and a method for growing at low cost, in which, the composition of the quasi-GaN substrate includes: a supporting substrate, a reflection/ohm layer laminated on the supporting substrate, a GaN layer laminated on said reflection layer and a second intermediate layer laminated between said supporting substrate and said reflection/ohm layer.
Description
Technical field
The present invention disclose the high-quality conduction grow on large diameter silicon (Si) growth substrates with the quasi gallium nitride base growing substrate of insulation and the technology and the technology of growth thereof, belong to the semiconductor electronic technical field.
Background technology
Great power LED has the huge future that replaces incandescent lamp, and industrial, high-power gallium nitride based LED is growth substrates with the sapphire.But sapphire wafer has following deficiency: thermal expansion factor between (1) epitaxial layer of gallium nitride and the sapphire wafer and lattice constant have great mismatch, thereby reduce the quality and the internal quantum efficiency of epitaxial loayer; (2) the sapphire wafer radiating efficiency is low; (3) cost height.
For solving with the sapphire is the heat dissipation problem of the high-power gallium nitride based LED of growth substrates, and a large amount of research drops into the gallium nitride based LED of vertical stratification, and two electrodes of the gallium nitride based LED of vertical stratification are layered in the two sides of supporting substrate respectively.The LED of vertical stratification not only possesses the high advantage of radiating efficiency, and it is even to possess CURRENT DISTRIBUTION, and current density is big, and resistance is lower, and forward voltage is lower, and reliability is higher, and light takes out the efficient advantages of higher.The production technology of Ou Silang (Osram) and day inferior (Nichia) company is after the gallium nitride-based epitaxial layer growth is finished, and bonding is supported substrate, utilizes laser means to peel off sapphire growth substrate.But, utilize laser means to peel off sapphire complex process, the cost height, the quality that sapphire process can reduce epitaxial loayer is peeled off in prematurity still.And laser means can not be applied to the silicon growth substrate.
For reducing the production cost of great power LED, a method that achieves noticeable achievement is to use large diameter growth substrates, still, produce large diameter gallium nitride, aluminium nitride, sapphire, zinc oxide, have any problem with silicon carbide wafer is not only technical, and cost is very high, large diameter gallium nitride, aluminium nitride, zinc oxide and silicon carbide wafer all do not have commercialization.
The advantage of silicon wafer is as follows: commodity wafer diameter big (so production cost further reduces), thermal conductivity height, price low (approximately being sapphire 1/10), quality height.Therefore, number of research projects concentrates on growing gallium nitride base LED on silicon wafer.But, deriving from the thermal expansion factor between epitaxial layer of gallium nitride and the silicon wafer and the mismatch of lattice constant in the main difficulty of growing gallium nitride epitaxial loayer on the silicon wafer, this mismatch causes the stress in the epitaxial layer of gallium nitride, and this stress reduces the quality of epitaxial loayer.Stress in the epitaxial layer of gallium nitride that mismatch causes of the thermal expansion factor between epitaxial layer of gallium nitride and the silicon wafer results from the cooling procedure after the epitaxial growth, from about 20 degrees centigrade of epitaxially grown about 1050 degrees centigrade of cool to room temperature, about 1000 degrees centigrade temperature difference produces stress in epitaxial layer of gallium nitride, this stress produces dislocation and distortion, reduces the quality of epitaxial loayer.In addition, silicon wafer absorbing light.
For addressing the above problem, technology and the process quilt that grows in quasi gallium nitride base growing substrate conduction on the silicon substrate and insulation and growth thereof propose [United States Patent (USP), the patent No.: 6,649,287, (2003); Chinese patent application, application number: 200410086564.8], it is big that this quasi gallium nitride base growing substrate possesses diameter, the quality height, and radiating efficiency height and production cost are low, simultaneously, avoid the shortcoming of various growth substrates above-mentioned.
The invention provides and utilize different intermediary layers, the conduction of manufacturing with the insulation the quasi gallium nitride base growing substrate.The quasi gallium nitride base growing substrate of conduction can be used for the gallium nitride based LED of growth of vertical structure, the quasi gallium nitride base growing substrate of insulation can be used for laterally (lateral) structure but possess the gallium nitride based LED of high thermal conductivity of growth, the quasi gallium nitride base growing substrate that has the insulation of metal level can be used to the to grow gallium nitride based LED [Chinese patent application, application number: 200510000296.8] of novel vertical stratification.
Summary of the invention
Utilize the minimum lattice constant mismatch between zinc sulphide and the silicon (Si), the present invention discloses and to utilize different intermediary layers, the conduction of growing high-quality and quasi gallium nitride base growing substrate insulation, and the process of low-cost growth.The main technique step of a concrete embodiment of process is as follows: the upper surface of etched silicon substrate is to form texture structure, stacked intermediary layer is on texture structure, the material of the first intermediary layer comprises: zinc sulphide, conduction zinc sulphide, aluminium nitride, the conduction aluminium nitride, metal, metal nitride, boron gallium nitrogen, boron aluminium nitrogen, low temperature gallium nitride, conduction low temperature gallium nitride, then, stack gradually gallium nitride layer or conduction gallium nitride layer, reflection/ohm layer or conduction reflection/ohm layer, the second intermediary layer, bonding insulation or conduction are supported substrate (stacked first electrode on the one side of the exposure of conduction support substrate), peel off the silicon substrate and the first intermediary layer, gallium nitride layer or conduction gallium nitride layer expose, and form the quasi gallium nitride base growing substrate.
When adopting low-melting-point metal bonding conduction or insulation to support substrate, need not the second intermediary layer.
Can select for use conductive silicon wafer or other electric conducting material to support substrate, select for use aluminium nitride ceramics to support substrate as insulation as conduction.
Use silicon wafer to bring huge benefit as growth substrates and support substrate: the diameter of (1) silicon wafer is big, therefore, epitaxial growth, photoetching, the productivity ratio of technologies such as multilayer electrode improves greatly, and production cost reduces; (2) price of silicon wafer is than sapphire, carborundum, and the zinc oxide growth substrate is low, and cost further reduces; (3) heat conductivility of silicon wafer is better than sapphire, can be used for high-power gallium nitride based LED; (4) the conductive silicon wafer can be used for making conduction quasi gallium nitride base growing substrate.
Use aluminium nitride ceramics to support the benefit of substrate to be as insulation: the mismatch of (1) thermal expansion factor is little, need not the second intermediary layer; (2) thermal conductivity of aluminium nitride ceramics is better than silicon wafer.
The technology and the production method of growth is conducted electricity on zinc sulphide/silicon substrate and quasi gallium nitride base growing substrate insulation that the present invention discloses can be applied to other accurate growth substrates.
Purpose of the present invention and every effect that can reach are as follows:
(1) the objective of the invention is to fully utilize the very little advantage of lattice constant mismatch between zinc sulphide and the silicon, the major diameter of silicon wafer and the advantage of low price, and the radiating efficiency height of the LED of vertical stratification, CURRENT DISTRIBUTION is even, light takes out efficient advantages of higher, production major diameter, low price, wafer defect density is low, the conduction that radiating efficiency is high with the insulation the quasi gallium nitride base growing substrate.The quasi gallium nitride base growing substrate of conduction can be used for the LED of growth of vertical structure, need not to peel off growth substrates.The quasi gallium nitride base growing substrate of insulation can be used for the growing great power LED of the high transversary of thermal conductivity need not flip chip bonding.The quasi gallium nitride base growing substrate of some insulation can be used for the growing LED of novel vertical stratification need not to peel off growth substrates.
(2) because below, conduction provided by the invention with the insulation the quasi gallium nitride base growing substrate have high-quality:
(a) when silicon single crystal being thought of as hexagonal (hexagonal) structure, the lattice constant mismatch between zinc sulphide and the silicon wafer is very little.As the ground floor of the first intermediary layer, zinc sulphide is grown directly upon on the silicon wafer.
(b) in the concrete embodiment of some first intermediary layer, gallium nitride layer is grown on the zinc sulfide layer.Gallium nitride and zinc sulphide all are high degree of polarization (high polarity), and therefore, gallium nitride and zinc sulphide are lattice match in long-periodic structure (long period structure), i.e. farmland coupling (domain match).
(c) in the concrete embodiment of some quasi gallium nitride base growing substrate, high-temperature ammonolysis gallium layer or conduction high-temperature ammonolysis gallium layer growth are on the low temperature gallium nitride or conduction low temperature gallium nitride or aluminum nitride buffer layer of fabricating low-defect-density.
(d) at Fig. 1 c, Fig. 1 d, Fig. 1 g, in the technological process of Fig. 1 h, because peel off growth substrates is before the quasi gallium nitride base growing substrate forms, so stripping process can not reduce the quality of the epitaxial layer of gallium nitride (comprise luminescent layer) of subsequent growth on the quasi gallium nitride base growing substrate.At Fig. 1 a, Fig. 1 b in the technological process of Fig. 1 e and Fig. 1 f, does not comprise and peels off growth substrates technology.
(e) effect [Chinese patent application that the difference of the thermal expansion factor between zinc sulfide layer and the silicon substrate is brought that minimizes and localize of the texture structure on the surface of silicon substrate, application number: 200510008931.7], this effect causes the stress in the zinc sulfide layer, the quality of the low zinc sulfide layer of this stress drop.
(f) when the stacked first intermediary layer, adopt the effect of composition layering (compositionally gradedlayer) method with the mismatch that alleviates lattice constant.
(g) when stacked gallium nitride-based epitaxial layer, adopt poor gallium/rich gallium two-step method to improve the quality of gallium nitride-based epitaxial layer.
(h) stress of stacked second intermediary layer generation of the mismatch of thermal expansion factor when alleviating subsequent growth gallium nitride light-emitting layer.
(i) at Fig. 1 c, Fig. 1 d, Fig. 1 g, in the technological process of Fig. 1 h, when heat-treating, original growth substrates is peeled off, original growth substrates no longer exists the binding force of the lattice of gallium nitride-based epitaxial layer, and the gallium nitride-based epitaxial layer is returned to normal crystal structure, so lattice defect reduces.
(3) reflection of the present invention/ohm layer improves light and takes out efficient.
(4) the present invention uses silicon wafer with high thermal conductivity or other material as supporting substrate, heat conduction efficiency height.
(5) the present invention adopts silicon wafer as growth substrates, and the technology of peeling off silicon wafer is very ripe.
The present invention and its feature and benefit will better be showed in the following detailed description.
Description of drawings
Fig. 1 a to Fig. 1 d shows first to fourth group of concrete embodiment of the technological process of the quasi gallium nitride base growing substrate of the insulation of low-cost growing high-quality on large diameter silicon substrate of the present invention respectively.
Fig. 1 e to Fig. 1 h shows it is first to fourth group of concrete embodiment of the technological process of the quasi gallium nitride base growing substrate of the conduction of low-cost growing high-quality on large diameter silicon substrate of the present invention respectively.
Fig. 2 a to Fig. 2 d is respectively first to fourth group of concrete embodiment of quasi gallium nitride base growing substrate of high-quality insulation of the technological process growth of employing Fig. 1 a of the present invention.
Fig. 2 e to Fig. 2 h is respectively the 5th to the 8th group of concrete embodiment of quasi gallium nitride base growing substrate of high-quality insulation of the technological process growth of employing Fig. 1 b of the present invention.
Fig. 2 i to Fig. 2 m is respectively the 9th to the 12 group of concrete embodiment of quasi gallium nitride base growing substrate of high-quality insulation of the technological process growth of employing Fig. 1 c of the present invention.
Fig. 2 n and Fig. 2 p are respectively the 13 group and the 14 group of concrete embodiments of quasi gallium nitride base growing substrate of high-quality insulation of the technological process growth of employing Fig. 1 d of the present invention.
Fig. 2 q is first group of concrete embodiment of quasi gallium nitride base growing substrate of high-quality conduction of the technological process growth of employing Fig. 1 e of the present invention.
Fig. 2 r is second group of concrete embodiment of quasi gallium nitride base growing substrate of high-quality conduction of the technological process growth of employing Fig. 1 f of the present invention.
Fig. 2 s and Fig. 2 t are respectively the 3rd group and the 4th group of concrete embodiments of quasi gallium nitride base growing substrate of high-quality conduction of the technological process growth of employing Fig. 1 g of the present invention.
Fig. 2 u is the 5th group of concrete embodiment of quasi gallium nitride base growing substrate of high-quality conduction of the technological process growth of employing Fig. 1 h of the present invention.
Fig. 3 a is the sectional view of some concrete embodiments of the first intermediary layer of the present invention to Fig. 3 s.
The detailed description of concrete embodiment and invention
Though specific embodiment of the present invention will be described below, following description just illustrates principle of the present invention, rather than limits the invention to the description of following specific embodiment.
Note following: in the present invention,
(1) in the drawings with technological process that identical digitized representation is identical or identical structure are described.
(2) technology of the quasi gallium nitride base growing substrate high-quality conduction of production of Fig. 1 displaying and insulation and the production that technology can be applied to other accurate growth substrates.
(3) " gallium nitrate based " comprises by the element gallium, aluminium, and indium, nitrogen, boron, the binary system that phosphorus is formed, ternary system, quaternary system, etc., for example, gallium nitride (GaN), boron gallium nitrogen (BGaN), aluminum gallium nitride (AlGaN), indium gallium nitrogen (InGaN), etc.
(4) material of growth substrates includes, but not limited to silicon wafer, the conductive silicon wafer, etc.The orientation of the crystrallographic plane of silicon wafer can be, but be not limited to (111).
(5) one side of growth substrates can have the texture structure that is formed by etching.Engraving method comprises wet method and dry method.A concrete embodiment of wet chemical etch: use NHO
3Acetum etching silicon wafer with HF.A concrete embodiment of dry etching: plasma (comprising ICP) etching silicon wafer.
(6) for when the epitaxial growth, the edge of silicon growth substrate of the present invention can not be upturned, and can use, but be not limited to, following method: (1) non-rigid fixedly silicon growth substrate is on the good pallet of heat conduction.The material of pallet includes, but not limited to molybdenum.Non-rigid fixing method includes, but not limited to the low-melting-point metal bonding, non-rigid mechanical clamp, or both combinations.(2) silicon wafer has high thermal, uses thicker silicon growth substrate.(3) combination of said method.
(7) first intermediary layers comprise the single or multiple lift structure, and every layer material is selected by one group of material, and this group material includes, but are not limited to: (A) elemental nitrogen, sulphur, zinc, aluminium, boron, the binary system of gallium and ternary system, etc., include, but are not limited to: zinc sulphide, conduction zinc sulphide, aluminium nitride, conduction aluminium nitride (doped silicon), low temperature gallium nitride, conduction low temperature gallium nitride, aluminum gallium nitride, conduction aluminum gallium nitride, boron gallium nitrogen, boron aluminium nitrogen, and their combination; (B) low-melting-point metal, low-melting-point metal includes, but not limited to indium, cadmium, and tin, etc.; (C) refractory metal, refractory metal includes, but not limited to gold, hafnium, scandium, Zirconium, vanadium, titanium, chromium, etc., and their combination; (D) metal nitride includes, but not limited to nitrogenize Zirconium, hafnium nitride, and titanium nitride, titanium nitride Zirconium, etc.; (E) above-mentioned material (A), (B), (C) and combination (D).
(8) method of stacked low-melting-point metal layer and high melting point metal layer includes, but not limited to vacuum evaporation, and vacuum splashing and plating (sputtering) is electroplated, chemical plating, etc.
The ternary system of (9) first intermediary layers (for example, boron aluminium nitrogen, etc.) has the composition hierarchy: at the different depth of this layer, and the ratio difference between every kind of composition.For example, when the boron aluminium nitrogen layer of the first intermediary layer is layered on the zinc sulfide layer, ratio between the various compositions of the superficial layer of boron aluminium nitrogen layer makes the difference minimum of the lattice constant between boron aluminium nitrogen layer and the zinc sulfide layer, change the ratio between the various compositions of boron aluminium nitrogen layer gradually, make the difference minimum of the lattice constant between boron aluminium nitrogen layer and the subsequent growth epitaxial loayer thereon.
(10) growing method of the low temperature gallium nitride layer in the gallium nitride-based epitaxial layer and the first intermediary layer comprises, but be not limited to, poor gallium/rich gallium two one-step growth methods: be less than under the condition of nitrogen element by stoichiometry at gallium element, growing gallium nitride layer and gallium nitride-based epitaxial layer, the rough surface of the gallium nitride layer that obtains thus, but dislocation and distortion can be reduced; Then, at gallium element by under the condition of stoichiometry more than the nitrogen element, continued growth gallium nitride layer and gallium nitride-based epitaxial layer, the surface smoothing of Sheng Chang gallium nitride layer thus, crystal mass height.
The function of the low-melting-point metal layer in (11) the first intermediary layers: low-melting-point metal layer is layered on the silicon growth substrate, and high melting point metal layer is layered on the low-melting-point metal layer.In the technology of peeling off the silicon growth substrate, directly heating makes the low-melting-point metal layer fusing, can the divided silicon growth substrates and the first intermediary layer.
(12) material of reflection/ohm layer includes, but not limited to distributed Bragg reflector (DBR), gold, and rhodium, nickel, platinum, palladium waits the metal and the combination thereof of high reflectance, and combination includes, but not limited to nickel/gold (Ni/Au), palladium/gold (Pd/Au), palladium/nickel (Pd/Ni).The method of stacked reflection/ohm layer includes, but not limited to vacuum evaporation, vacuum splashing and plating, and chemical plating is electroplated, epitaxial growth, etc.
(13) second intermediary layers comprise the single or multiple lift structure, and every layer material is selected by one group of low melting point metal material, and this group material includes, but not limited to indium, tin, cadmium, silver, metal or alloy such as golden tin.Second intermediary is stacked in reflection/ohm layer layer by layer and supports between the substrate.The function of low-melting-point metal layer: when the epitaxial growth end, temperature reduces, and low-melting-point metal layer solidifies, and temperature continues to drop to about 20 degrees centigrade of room temperatures.In the scope of less temperature difference, the difference of the thermal expansion factor between epitaxial loayer and the support substrate causes stress, but this stress is little, and this stress is little to the influence of the quality of epitaxial loayer.
(14) conduction supports the material of substrate to include, but not limited to conductive silicon wafer, conductive metal film, conductive film.
(15) insulation supports the material of substrate to include, but not limited to silicon wafer, aluminium nitride ceramics, etc.
(16) peel off the technology of growth substrates: when the first intermediary layer does not comprise metal level, the method of peeling off the growth substrates and the first intermediary layer comprises, but be not limited to, precision optical machinery grinding/polishing, selectivity wet method or dry etching, and their combination (for example, precision optical machinery grinds growth substrates to certain thickness, for example 10 microns, adopt wet method or dry etching remainder then).When the first intermediary layer comprises metal level, can directly heat, make metal level fusing, the promptly separable growth substrates and the first intermediary layer utilize selective etch to corrode other layer in the first intermediary layer then.
(17) peel off growth substrates after, gallium nitride layer exposes, heat-treat, because cause the growth substrates of gallium nitride layer defective to be stripped from this moment, cause the external force of defective not exist, under suitable temperature and time, the gallium nitride-based epitaxial layer is returned to normal crystal structure, and the lattice defect of gallium nitride layer (defect) density reduces.
Fig. 1 a shows first concrete embodiment of the technological process of the quasi gallium nitride base growing substrate that low-cost batch production of the present invention is insulated.
Technological process 101: etching texture structure on the one side of silicon growth substrate, texture structure makes the stress that mismatch caused of the thermal expansion factor between the silicon growth substrate and the first intermediary layer localize and the part of cancelling each other, thereby, reduce dislocation, improve the quality of epitaxial loayer.
102: the first intermediarys of technological process are stacked in silicon wafer layer by layer to be had on the one side of texture structure.
The greatest problem of epitaxial growth of gallium nitride epitaxial loayer is the mismatch of lattice constant and coefficient of thermal expansion on silicon wafer, introduces the first intermediary layer effect of the mismatch of lattice constant and coefficient of thermal expansion is reduced to minimum.The first intermediary layer comprises the single or multiple lift structure, and every layer material is selected by one group of material, and this group material includes, but are not limited to: (A) elemental nitrogen, sulphur, zinc, aluminium, boron, the binary system of gallium, ternary system, and quaternary system comprise, but be not limited to: zinc sulphide, conduction zinc sulphide, aluminium nitride, conduction aluminium nitride (doped silicon), the low temperature gallium nitride, conduction low temperature gallium nitride, aluminum gallium nitride, conduction aluminum gallium nitride, boron gallium nitrogen, boron aluminium nitrogen, and their combination; (B) low-melting-point metal, low-melting-point metal includes, but not limited to indium, tin, cadmium, silver, metal or alloy such as golden tin; (C) refractory metal, refractory metal includes, but not limited to gold, hafnium, scandium, Zirconium, vanadium, titanium, chromium, and their combination; (D) metal nitride includes, but not limited to nitrogenize Zirconium, hafnium nitride, and titanium nitride, titanium nitride Zirconium, etc.; (E) above-mentioned material (A), (B), (C) and combination (D).
The concrete embodiment of first of technological process 102: growth zinc sulphide or conduction zinc sulphide on silicon wafer.
Concrete embodiment 1.The silicon growth substrate is placed in vacuum evaporation (vacuum vapor deposition) or electron beam sputter (the electron beam deposition) equipment, under temperature 150-250 degree centigrade, utilize 3N-zinc sulphide source (pellet), evaporation 1 to 500 nano thickness zinc sulphide.Then 800 to 1000 degrees centigrade of annealing.
Concrete embodiment 2.The silicon growth substrate is placed in pulse laser sputter (the Pulsed Laser Deposition:PLD) equipment, under temperature 700-800 degree centigrade, and evaporation 1 to 500 nano thickness zinc sulphide.
Concrete embodiment 3.Be placed on molecular beam epitaxy growth apparatus (Molecular-beamepitaxy.MBE) in, under temperature 350-450 degree centigrade, utilize diethyl zinc (diethylzinc, DEZn) and ditertiarybutylsulfide (DtBS) respectively as zinc source and sulphur source, the growth 1 to 500 nano thickness zinc sulphide.
In growth course, chosen doping element obtains P-type or N-type conduction zinc sulfide layer.
Second concrete embodiment of technological process 102: growing aluminum nitride on zinc sulfide layer/conduction aluminium nitride.The growth substrates that has zinc sulfide layer is placed in the metal organic chemical vapor deposition stove (MOCVD), under atmospheric pressure, use three formicester aluminium (trimethylaluminum, TMA), and ammonia.At 1000-1250 degree centigrade, growth thickness is that the aluminium nitride that smooth surface is arranged of 1 to 500 nanometer is on zinc sulfide layer.In growth course, chosen doping element, for example, silicon obtains N-type conduction aln layer.
The 3rd concrete embodiment of technological process 102: on zinc sulfide layer, utilize composition layered approach growth boron aluminium nitrogen: aluminium nitride/boron aluminium nitrogen (B
xAl
1-xN).In MOCVD, under atmospheric pressure, temperature is 1050-1150 degree centigrade, uses three formicester aluminium (TMA), boron triethyl (TEB), and ammonia, growth boron aluminium nitrogen on zinc sulfide layer.Boron aluminium nitrogen has the composition hierarchy: at the different depth of this layer, the composition of boron and aluminium is different, the value of promptly different " x ".At the boron aluminium nitrogen layer that contacts with zinc sulfide layer, select the value of " x ", make the difference minimum of the lattice constant between boron aluminium nitrogen layer and the zinc sulfide layer.The value of " x " progressively lowers up to 0 then, promptly from boron aluminium nitrogen (B
xAl
1-xN) be transited into aluminium nitride.The value of " x " can change continuously, also can discontinuously change.
The 4th concrete embodiment of technological process 102: stacked metal nitride/metal on zinc sulfide layer, for example, aluminium nitride/aluminium.At first stacked thickness is the aluminium of several monoatomic layers (monolayer) to several nanometers on zinc sulfide layer, re-uses the method continued growth aluminium nitride of second concrete embodiment of technological process 102.Another concrete embodiment: behind the stacked aluminium lamination, the formed aluminium lamination of nitrogenize obtains aln layer.
The 5th concrete embodiment of technological process 102: aluminium nitride/titanium/indium.Stacked one deck indium on zinc sulfide layer, stacked again one deck titanium, aluminium nitride is grown on the titanium layer.
Notice that the titanium in this concrete embodiment can be by hafnium, scandium, Zirconium, vanadium, chromium, gold, and their combination is replaced.
The 6th concrete embodiment of technological process 102: aluminium nitride/titanium nitride/titanium/indium.Stacked one deck indium on zinc sulfide layer, stacked again one deck titanium is put into MOCVD, at 1000-1100 ℃, feeds ammonia and hydrogen, forms titanium nitride layer on the surface of titanium layer.Continued growth aluminium nitride on titanium nitride layer.
The 7th concrete embodiment of technological process 102: metal.Stacked one deck refractory metal on zinc sulfide layer, the material of high melting point metal layer includes, but not limited to gold, hafnium, scandium, Zirconium, vanadium, titanium, chromium, and their combination, stacked method includes, but not limited to vacuum vapor deposition method, vacuum splashing and plating, magnetic control sputtering plating.Aluminium nitride is grown on the high melting point metal layer.
The 8th concrete embodiment of technological process 102: low temperature gallium nitride/conduction low temperature gallium nitride.In MOCVD, under the 400-650 ℃ of temperature, growth thickness is the superficial layer of the gallium nitride layer of 10-2000 dust as the intermediary layer.Adopt the gallium nitride layer of poor gallium/rich gallium two-step method growth intermediary layer: two-step method comprises two steps: be less than under the condition of nitrogen element by stoichiometry at gallium element, for example gallium element is pressed stoichiometric ratio less than 1 with the nitrogen element, the growing gallium nitride layer, the rough surface of the gallium nitride layer that obtains thus, but dislocation and distortion can be reduced; Then, at gallium element by under the condition of stoichiometry more than the nitrogen element, continued growth gallium nitride layer, the surface smoothing of Sheng Chang gallium nitride layer thus, crystal mass height.
Technological process 103: heat treatment.
Utilize the technology of Fig. 1 a, shop drawings 2a is to the quasi gallium nitride base growing substrate of the insulation shown in Fig. 2 d.
Fig. 2 a shows first group of concrete embodiment of insulating quasi gallium nitride base growing substrate: the first intermediary layer comprises other layers 202 of the low temperature gallium nitride layer 203 and the first intermediary layer.Other layers 202 of the first intermediary layer are layered on the silicon growth substrate 201.Low temperature gallium nitride layer 203 is layered on other layers 202 of the first intermediary layer as the superficial layer of the first intermediary layer.
Fig. 3 d, 3g, 3i, 3m, 3p, 3q, the concrete embodiment of the first intermediary layer of the insulating quasi gallium nitride base growing substrate that some concrete embodiments of the first intermediary layer that 3r, 3s show can be showed as Fig. 2 a.
Fig. 2 b shows second group of concrete embodiment of insulating quasi gallium nitride base growing substrate: the first intermediary layer comprises metal level 205, other layers 204 of the conduction low temperature gallium nitride layer 206 and the first intermediary layer.Other layers 204 of the first intermediary layer are layered on the silicon growth substrate 201.Metal level 205 is layered on other layers 204 of the first intermediary layer, and conduction low temperature gallium nitride layer 206 superficial layers as the first intermediary layer are layered on the metal level 205.
The concrete embodiment of the first intermediary layer that Fig. 3 g shows can be used as a concrete embodiment of the first intermediary layer of the insulating quasi gallium nitride base growing substrate that Fig. 2 b showed.
Fig. 2 c shows the 3rd concrete embodiment of the quasi gallium nitride base growing substrate of insulation: the first intermediary layer comprises metal level 205, other conductive layers 207 of the conduction low temperature gallium nitride layer 206 and the first intermediary layer.Metal level 205 is layered on the silicon growth substrate 201.Other conductive layers 207 of the first intermediary layer are layered on the metal level 205, and conduction low temperature gallium nitride layer 206 superficial layers as the first intermediary layer are layered on other conductive layers 207 of the first intermediary layer.
Fig. 2 d shows the 4th concrete embodiment of the quasi gallium nitride base growing substrate of insulation: the first intermediary layer comprises metal level 205, other layers 208 of the first intermediary layer, other conductive layers 209 of the first intermediary layer and conduction low temperature gallium nitride layer 206.Other layers 208 of the first intermediary layer are layered on the silicon growth substrate 201, metal level 205 is layered between other conductive layers 209 of other layers 208 of the first intermediary layer and the first intermediary layer, and conduction low temperature gallium nitride layer 206 superficial layers as the first intermediary layer are layered on other conductive layers 209 of the first intermediary layer.
Fig. 3 m, 3n, the concrete embodiment of the first intermediary layer of the insulating quasi gallium nitride base growing substrate that some concrete embodiments of the first intermediary layer that 3p, 3s show can be showed as Fig. 2 d.
Quasi gallium nitride base growing substrate shown in Fig. 2 a can be used to the to grow gallium nitride based LED of transversary of high-power high thermal conductance.Fig. 2 b, the insulating quasi gallium nitride base growing substrate that Fig. 2 c and Fig. 2 d are showed to be used to the to grow gallium nitride based LED of novel vertical structure of high-power high thermal conductance.
Fig. 1 b shows second concrete embodiment of the technological process of low-cost batch production insulating quasi gallium nitride base growing substrate of the present invention. Technological process 101 and 112 and the technological process 101 and 102 of the quasi gallium nitride base growing substrate showed of Fig. 1 a basic identical, uniquely be not both technological process 112 and do not require the superficial layer of cryogenic nitrogen gallium layer as the first intermediary layer.
Technological process 113.On the superficial layer of the first intermediary layer, the gallium nitride layer growth high-temperature electric conduction or insulation.The method of growth includes, but are not limited to: poor gallium/rich gallium two-step method.
Utilize the technology of Fig. 1 b, shop drawings 2e is to the quasi gallium nitride base growing substrate of the insulation shown in Fig. 2 h.
Fig. 2 e shows the 5th concrete embodiment of insulating quasi gallium nitride base growing substrate: the first intermediary layer 210 is layered on the silicon insulation growth substrates 201, and gallium nitride layer 211 is layered on the first intermediary layer 210.Other layers 202 of the first intermediary layer 210 and the first intermediary layer are basic identical, and unique is not both the first intermediary layer 210 and does not require the superficial layer of cryogenic nitrogen gallium layer as the first intermediary layer.
The concrete embodiment of the first intermediary layer of the insulating quasi gallium nitride base growing substrate that all concrete embodiments of the first intermediary layer that Fig. 3 shows can be showed as Fig. 2 e.
Fig. 2 f shows the 6th concrete embodiment of insulating quasi gallium nitride base growing substrate: first intermediary is stacked on the silicon growth substrate 201 layer by layer, and conduction gallium nitride layer 213 is layered on the first intermediary layer.The first intermediary layer comprises the superficial layer of metal level 205 as the first intermediary layer, and metal level 205 is layered on other layers 212 of the first intermediary layer.
The concrete embodiment of the first intermediary layer that Fig. 3 b shows can be used as the concrete embodiment of the first intermediary layer of the insulating quasi gallium nitride base growing substrate that Fig. 2 e showed.
Fig. 2 g shows the 7th concrete embodiment of insulating quasi gallium nitride base growing substrate: first intermediary is stacked on the silicon growth substrate 201 layer by layer, and conduction gallium nitride layer 213 is layered on the first intermediary layer.The first intermediary layer comprises other conductive layers 214 of the metal level 205 and the first intermediary layer.Metal level 205 is layered on the silicon insulation growth substrates 201, and other conductive layers 214 of the first intermediary layer are layered on the metal level 205.Conduction gallium nitride layer 213 is layered on other conductive layers 214 of the first intermediary layer.
Fig. 2 h shows the 8th concrete embodiment of the quasi gallium nitride base growing substrate of insulation: first intermediary is stacked on the silicon growth substrate 201 layer by layer, and conduction gallium nitride layer 213 is layered on the first intermediary layer.The first intermediary layer comprises other conductive layers 216 of other layers 215 and first intermediary layer of metal level 205, the first intermediary layers.Other layers 215 of the first intermediary layer are layered on the silicon growth substrate 201, metal level 205 is layered between other conductive layers 216 of other layers 215 of the first intermediary layer and the first intermediary layer, and conduction gallium nitride layer 213 is layered on other conductive layers 216 of the first intermediary layer.
Fig. 3 g, 3h, 3m, 3n, the concrete embodiment of the first intermediary layer of the insulating quasi gallium nitride base growing substrate that some concrete embodiments of the first intermediary layer that 3p, 3s show can be showed as Fig. 2 h.
Quasi gallium nitride base growing substrate shown in Fig. 2 e can be used to the to grow gallium nitride based LED of high-power high thermal conductance.Fig. 2 f, the insulating quasi gallium nitride base growing substrate that Fig. 2 g and Fig. 2 h are showed to be used to the to grow gallium nitride based LED of novel vertical structure of high-power high thermal conductance.
Fig. 1 c shows the 3rd concrete embodiment of the technological process of low-cost batch production insulating quasi gallium nitride base growing substrate of the present invention.Technological process 101 is identical with first concrete embodiment of the technological process of the 102 quasi gallium nitride base growing substrates of showing with Fig. 1 a.
Technological process 123.The quasi gallium nitride base growing substrate of adopting process flow process 101 and 102 growths has low temperature gallium nitride layer conduction or insulation as superficial layer, and stacked reflection/ohm layer is on low temperature gallium nitride layer conduction or insulation, and the material of reflection/ohm layer comprises, but be not limited to gold, rhodium, nickel, platinum, palladium, metal and combination thereof Deng high reflectance, combination includes, but not limited to nickel/gold (Ni/Au), palladium/gold (Pd/Au), palladium/nickel (Pd/Ni).The method of stacked reflection/ohm layer includes, but not limited to vacuum evaporation, vacuum splashing and plating, and chemical plating is electroplated, epitaxial growth, etc.
Reflection/ohm layer also can comprise distributed Bragg reflector (DBR).
The stacked second intermediary layer on reflection/ohm layer, the material of the second intermediary layer is a low-melting-point metal, includes, but not limited to indium, tin, etc.Stacked method includes, but not limited to vacuum evaporation, vacuum splashing and plating, and chemical plating is electroplated, epitaxial growth, etc.
Technological process 124.The support substrate of stacked insulation is on the second intermediary layer.The material of the support substrate of insulation includes, but not limited to silicon wafer, aluminium nitride ceramics, etc.Stacked method includes, but not limited to wafer bonding, etc.
Technological process 125.Peel off other layers of the silicon growth substrate and the first intermediary layer, the low temperature gallium nitride layer exposes.
Technological process 126.Heat treatment.When heat-treating, because cause the growth substrates of low temperature gallium nitride layer defects to be stripped from, cause the external force of defective not exist in gallium nitride layer, therefore, the defect concentration of low temperature gallium nitride layer reduces.
Technological process 127.Epitaxial growth conduction or insulating nitride gallium layer on the low temperature gallium nitride layer.The method of growth includes, but are not limited to: poor gallium/rich gallium two-step method.
Utilize the technology of Fig. 1 c, shop drawings 2i is to the insulating quasi gallium nitride base growing substrate shown in Fig. 2 m.
Fig. 2 i shows the 9th concrete embodiment of the quasi gallium nitride base growing substrate of insulation: the second intermediary layer 219 is layered on the support substrate 218 of insulation, and reflection/ohm layer 220 is layered between the second intermediary layer 219 and the low temperature gallium nitride layer 203.Wherein, reflection/ohm layer 220 and low temperature gallium nitride layer 203 need not to be conduction, and for example, reflection/ohm layer 220 is non-conductive distributed Bragg reflectors.Do not carry out technological process 127.
Fig. 2 j shows the tenth concrete embodiment of the quasi gallium nitride base growing substrate of insulation: the tenth concrete embodiment and the 9th concrete embodiment are basic identical, and unique is not both gallium nitride layer 211 epitaxial growths on low temperature gallium nitride layer 203.
Fig. 2 k shows the 11 concrete embodiment of the quasi gallium nitride base growing substrate of insulation: the second intermediary layer 219 is layered on the support substrate 218 of insulation, and conduction reflection/ohm layer 221 is layered between the second intermediary layer 219 and the conduction low temperature gallium nitride layer 206.
Fig. 2 m shows the 12 concrete embodiment of the quasi gallium nitride base growing substrate of insulation: the 12 concrete embodiment and the 11 concrete embodiment are basic identical, and unique is not both 222 epitaxial growths of conduction gallium nitride layer on conduction low temperature gallium nitride layer 206.
Having insulation and supporting Fig. 2 i of substrate and the quasi gallium nitride base growing substrate shown in Fig. 2 j can be used to the to grow gallium nitride based LED of high-power high thermal conductance.The insulating quasi gallium nitride base growing substrate that Fig. 2 k and Fig. 2 m are showed to be used to the to grow gallium nitride based LED of novel vertical structure of high-power high thermal conductance.
Fig. 1 d shows the 4th concrete embodiment of the technological process of the quasi gallium nitride base growing substrate that low-cost batch production of the present invention is insulated.Technological process 101,123,124, identical with the 3rd concrete embodiment of the technological process of the 126 quasi gallium nitride base growing substrates of showing with Fig. 1 c.Technological process 112 is identical with second concrete embodiment of the technological process of the 113 quasi gallium nitride base growing substrates of showing with Fig. 1 b.
Technological process 136.Peel off silicon or sapphire growth substrate and the first intermediary layer, gallium nitride layer or conduction gallium nitride layer expose.
Utilize the technology of Fig. 1 d, shop drawings 2n is to the insulating quasi gallium nitride base growing substrate shown in Fig. 2 p.
Fig. 2 n shows the 13 concrete embodiment of the quasi gallium nitride base growing substrate of insulation: the 13 concrete embodiment and the tenth concrete embodiment are basic identical, but do not have low temperature gallium nitride layer 203.
Fig. 2 p shows the 14 concrete embodiment of the quasi gallium nitride base growing substrate of insulation: the 14 concrete embodiment and the 12 concrete embodiment are basic identical, but do not conduct electricity low temperature gallium nitride layer 206.
Have insulation and support can be used to the to grow gallium nitride based LED of high-power high thermal conductance of the quasi gallium nitride base growing substrate shown in Fig. 2 n of substrate.The insulating quasi gallium nitride base growing substrate that Fig. 2 p is showed to be used to the to grow gallium nitride based LED of novel vertical structure of high-power high thermal conductance.
Fig. 2 i also can not comprise the second intermediary layer to the quasi gallium nitride base growing substrate of the insulation that Fig. 2 p shows, especially uses the support substrate of aluminium nitride ceramics as insulation.
Fig. 1 e shows first concrete embodiment of the technological process of low-cost batch production conduction quasi gallium nitride base growing substrate of the present invention. Technological process 141 and 142 and the technological process 101 and 102 showed of Fig. 1 a basic identical.But, growth substrates, the first intermediary layer and low temperature gallium nitride layer all conduct electricity.
Utilize the technology of Fig. 1 e, the conduction quasi gallium nitride base growing substrate shown in the shop drawings 2q.
Fig. 2 q shows first concrete embodiment of conduction quasi gallium nitride base growing substrate: other layer 224 of the first intermediary layer of conducting electricity is layered on the conductive silicon growth substrates 223, and conduction low temperature gallium nitride layer 206 is layered on other layer 224 of the conduction first intermediary layer.
Fig. 1 f shows second concrete embodiment of the technological process of low-cost batch production conduction quasi gallium nitride base growing substrate of the present invention. Technological process 152 and 153 and the technological process 112 and 113 showed of Fig. 1 b basic identical.But, growth substrates, the first intermediary layer and gallium nitride layer all conduct electricity.
Utilize the technology of Fig. 1 f, the conduction quasi gallium nitride base growing substrate shown in the shop drawings 2r.
Fig. 2 r shows second concrete embodiment of conduction quasi gallium nitride base growing substrate: the first intermediary layer 225 of conduction is layered on the conductive silicon growth substrates 223, and conduction gallium nitride layer 222 is layered on the first intermediary layer 225 of conduction.
Fig. 1 g shows the 3rd concrete embodiment of the technological process of low-cost batch production conduction quasi gallium nitride base growing substrate of the present invention.Technological process 162,163,164,165,167 technological processes of showing with Fig. 1 c respectively 102,123,124,125,127 is basic identical, and difference is, low temperature gallium nitride layer in the first intermediary layer, the second intermediary layer, reflection/ohm layer supports substrate and gallium nitride layer all to conduct electricity.Support substrate with favorable conductive and heat conductivility is layered on the conduction second intermediary layer.Conduction supports the material of substrate to include, but not limited to metallic film, conductive silicon wafer etc.Support substrate for metallic film, stacked method includes, but not limited to electroplate, chemical plating, and vacuum vapor deposition method, vacuum splashing and plating, and metallic film/wafer bonding etc.Support substrate for the conductive silicon wafer, stacked method includes, but not limited to wafer bonding.
Utilize the technology of Fig. 1 g, the conduction quasi gallium nitride base growing substrate shown in shop drawings 2s and Fig. 2 t.
Fig. 2 s shows the 3rd concrete embodiment of conduction quasi gallium nitride base growing substrate: the second intermediary layer 219 of conduction is layered between the support substrate 226 and conduction reflection/ohm layer 221 of conduction, and conduction low temperature gallium nitride layer 206 is layered on the conduction reflection/ohm layer 221.The 3rd concrete embodiment adopts the technology of Fig. 1 g, but do not comprise processing step 167.
Fig. 2 t shows the 4th concrete embodiment of conduction quasi gallium nitride base growing substrate: the second intermediary layer 219 of conduction is layered between the support substrate 226 and conduction reflection/ohm layer 221 of conduction, and conduction low temperature gallium nitride layer 206 is layered between conduction reflection/ohm layer 221 and the conduction gallium nitride layer 222.
The conduction quasi gallium nitride base growing substrate that Fig. 2 q shows to Fig. 2 t can be used for the growing gallium nitride based LED of high-power vertical stratification.
Fig. 1 h shows the 4th concrete embodiment of the technological process of low-cost batch production conduction quasi gallium nitride base growing substrate of the present invention.Technological process 173,163,164 and 176 is basic identical with the technological process 113,123,124 and 136 of Fig. 1 d displaying respectively, and difference is that reflection/ohm layer supports substrate and gallium nitride layer all to conduct electricity.
Utilize the technology of Fig. 1 h, the conduction quasi gallium nitride base growing substrate shown in the shop drawings 2u.
Fig. 2 u shows the 5th concrete embodiment of conduction quasi gallium nitride base growing substrate: the second intermediary layer 219 of conduction is layered between the support substrate 226 and conduction reflection/ohm layer 221 of conduction, and conduction gallium nitride layer 222 is layered on the conduction reflection/ohm layer 221.
The conduction quasi gallium nitride base growing substrate that Fig. 2 u is showed to be used to the to grow gallium nitride based LED of high-power vertical stratification.
Fig. 3 a shows the structure of the first different intermediary layers to Fig. 3 s.
The first intermediary layer that Fig. 3 a shows has single layer structure, includes only zinc sulphide or conduction zinc sulfide layer, is grown on silicon wafer or the conductive silicon wafer.Gallium nitride layer or conduction gallium nitride layer are grown on zinc sulphide or the conduction zinc sulfide layer to form the quasi gallium nitride base growing substrate.
Fig. 3 b has sandwich construction to the first intermediary layer that Fig. 3 s shows, is the various combinations of following material: zinc sulphide, conduction zinc sulfide layer, metal level, aluminium nitride, conduction aluminium nitride, the low temperature gallium nitride, conduction low temperature gallium nitride, boron aluminium nitrogen, boron gallium nitrogen, nitrogenize Zirconium, hafnium nitride, titanium nitride, titanium nitride Zirconium, etc.Wherein zinc sulphide or conduction zinc sulfide layer are grown on silicon wafer or the conductive silicon wafer, and other layer growth of the first intermediary layer is on zinc sulphide or conduction zinc sulfide layer.Gallium nitride layer or conduction gallium nitride layer are grown on the first intermediary layer to form the quasi gallium nitride base growing substrate.
Top concrete description does not limit the scope of the invention, and only provides some specific illustrations of the present invention.Therefore covering scope of the present invention should be determined by claim and their legal equivalents, rather than by above-mentioned specific detailed description and embodiment decision.
Claims (9)
1. quasi gallium nitride base substrate, its part comprises:
(a) growth substrates; Wherein, the material of growth substrates is to select from one group of material, and this group material comprises: silicon wafer;
(b) the first intermediary layer; Wherein, the described first intermediary layer comprises: other layers of the zinc sulfide layer and the first intermediary layer; Wherein, described zinc sulfide layer is laminated on the described growth substrates, and other layers of the first intermediary layer are laminated on the described zinc sulfide layer; Wherein, other layers of the described first intermediary layer comprise: the single or multiple lift structure, every layer material is to select from one group of material, this group material comprises: the binary system and the ternary system of (1) elemental nitrogen, gallium, boron comprise: aluminium nitride, low temperature gallium nitride, boron aluminium nitrogen, boron gallium nitrogen and their combination; (2) low-melting-point metal layer, the material of described low-melting-point metal layer comprises: indium, cadmium, silver and tin; (3) high melting point metal layer, the material of described high melting point metal layer comprises: gold, hafnium, scandium, Zirconium, vanadium, titanium, chromium, and their combination; (4) nitrided metal layer, the material of described nitrided metal layer comprises: nitrogenize Zirconium, hafnium nitride, titanium nitride, titanium nitride Zirconium; (5) combination of above-mentioned material (1), (2), (3) and (4); Wherein, the described low temperature gallium nitride layer superficial layer that is the first intermediary layer.
2. the quasi gallium nitride base substrate of claim 1, wherein, the one side of described growth substrates possesses etched texture structure; The described first intermediary layer is laminated in the one side that possesses etched texture structure of described growth substrates.
3. quasi gallium nitride base substrate, its part comprises:
(a) growth substrates; Wherein, the material of growth substrates is to select from one group of material, and this group material comprises: silicon wafer;
(b) the first intermediary layer; Wherein, the described first intermediary layer comprises: other layers of the zinc sulfide layer and the first intermediary layer; Wherein, described zinc sulfide layer is laminated on the described growth substrates, and other layers of the first intermediary layer are laminated on the described zinc sulfide layer; Wherein, other layers of the described first intermediary layer comprise: the single or multiple lift structure, every layer material is to select from one group of material, this group material comprises: the binary system and the ternary system of (1) elemental nitrogen, gallium, boron comprise: aluminium nitride, low temperature gallium nitride, boron aluminium nitrogen, boron gallium nitrogen, and their combination; (2) low-melting-point metal layer, the material of described low-melting-point metal layer comprises: indium, cadmium and tin; (3) high melting point metal layer, the material of described high melting point metal layer comprises: gold, hafnium, scandium, Zirconium, vanadium, titanium, chromium, and their combination; (4) nitrided metal layer, the material of described nitrided metal layer comprises: nitrogenize Zirconium, hafnium nitride, titanium nitride, titanium nitride Zirconium; (5) combination of above-mentioned material (1), (2), (3) and (4);
(c) gallium nitride layer; Wherein, described gallium nitride layer is laminated on the described first intermediary layer.
4. the quasi gallium nitride base substrate of claim 3, wherein, the one side of described growth substrates possesses etched texture structure; The described first intermediary layer is laminated in the one side that possesses etched texture structure of described growth substrates.
5. claim 1 or 3 quasi gallium nitride base substrate, wherein, described silicon wafer growth substrate comprises: non-conductive silicon wafer growth substrate and conductive silicon wafer growth substrates; Described zinc sulfide layer comprises: non-conductive zinc sulfide layer and conduction zinc sulfide layer; Described low temperature gallium nitride layer comprises: non-conductive low temperature gallium nitride layer and conduction low temperature gallium nitride layer; Described aln layer comprises: non-conductive aln layer and conduction aln layer.
6. method of producing the quasi gallium nitride base substrate comprises following processing step:
(a) provide a growth substrates;
(b) stacked zinc sulfide layer is on described growth substrates; Other layer of the stacked first intermediary layer is on described zinc sulfide layer; Wherein, other layer of the described first intermediary layer comprises: the single or multiple lift structure, every layer material is to select from one group of material, this group material comprises: the binary system and the ternary system of (1) elemental nitrogen, aluminium, gallium, boron comprise: aluminium nitride, low temperature gallium nitride, boron aluminium nitrogen, boron gallium nitrogen, and their combination; (2) low-melting-point metal layer, the material of described low-melting-point metal layer comprises: indium, cadmium and tin; (3) high melting point metal layer, the material of described high melting point metal layer comprises: gold, hafnium, scandium, Zirconium, vanadium, titanium, chromium, and their combination; (4) nitrided metal layer, the material of described nitrided metal layer comprises: nitrogenize Zirconium, hafnium nitride, titanium nitride, titanium nitride Zirconium; (5) combination of above-mentioned material (1), (2), (3) and (4).
7. the method for the production quasi gallium nitride base substrate of claim 6, further comprise processing step: the epitaxial growth of gallium nitride layer is on the described first intermediary layer.
8. the method for the production quasi gallium nitride base substrate of claim 6, wherein, the superficial layer of the described first intermediary layer is the low temperature gallium nitride layer, further comprises processing step:
(a) stacked reflection/ohm layer is on described low temperature gallium nitride layer;
(b) stacked support substrate forms bonded substrate on described reflection/ohm layer;
(c) peel off other layer of described growth substrates and the described first intermediary layer of part from described bonded substrate, make the low temperature gallium nitride layer expose; Wherein, the described method of peeling off comprises: their combination is separated, reached to precision optical machinery grinding/polishing, selective etch, heat fused;
(d) heat treatment.
9. the method for the production quasi gallium nitride base substrate of claim 6 further comprises processing step:
(a) the epitaxial growth of gallium nitride layer is on the described first intermediary layer;
(b) stacked reflection/ohm layer is on described gallium nitride layer;
(c) stacked support substrate forms bonded substrate on described reflection/ohm layer;
(d) peel off described growth substrates and the described first intermediary layer from described bonded substrate, make gallium nitride layer expose; Wherein, the described method of peeling off comprises: their combination is separated, reached to precision optical machinery grinding/polishing, selective etch, heat fused;
(e) heat treatment.
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| CN104752578A (en) * | 2013-12-25 | 2015-07-01 | 宝钢金属有限公司 | Flip-chip welding metal layer structure for AC-LED (Alternating Current-Light Emitting Diode) chip structure |
| CN103746037B (en) * | 2014-01-02 | 2016-03-30 | 上海大学 | A kind of preparation method of silica-based ZnS film ultraviolet-visible photodetector |
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