CN100495677C - 倒装芯片封装方法及其焊锡点形成方法 - Google Patents

倒装芯片封装方法及其焊锡点形成方法 Download PDF

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Publication number
CN100495677C
CN100495677C CNB2006800081873A CN200680008187A CN100495677C CN 100495677 C CN100495677 C CN 100495677C CN B2006800081873 A CNB2006800081873 A CN B2006800081873A CN 200680008187 A CN200680008187 A CN 200680008187A CN 100495677 C CN100495677 C CN 100495677C
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mentioned
resin
bubble
substrate
solder powder
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CN101142665A (zh
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辛岛靖治
北江孝史
中谷诚一
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

供给一种可能适用于下一代半导体集成电路的倒装芯片封装的、生产性及信赖性高的倒装芯片封装方法、以及衬底间连接方法。具有多个连接端子(11)的电路衬底(21)和具有多个电极端子(12)的半导体芯片(20)的间隙间，供给含有焊锡粉(16)和气泡产生剂的树脂(14)后，加热树脂(14)，使树脂(14)中含有的气泡产生剂产生气泡(30)。树脂(14)，由产生的气泡(30)的膨胀被向气泡(30)外推出，在电路衬底(10)和半导体芯片(20)的端子间自行聚合。再有，通过加热树脂(14)，熔融端子间自行聚合了的树脂(14)中含有的焊锡粉(16)，在端子间形成连接体(22)，完成倒装芯片封装体。

Description

倒装芯片封装方法及其焊锡点形成方法
技术领域
[0001]本发明，涉及一种将半导体芯片搭载到电路衬底上的倒装芯片封装方法，以及在衬底的电极上形成焊锡点的方法。
背景技术
[0002]近年，伴随着使用于电子器件的半导体集成电路(LSI)的高密度、高集成化，半导体集成电路芯片的电极端子的多销、窄间距化在急速发展。这些半导体集成电路芯片向电路衬底的组装中，为了减少布线迟延，倒装芯片封装被广泛地应用。并且，在这个倒装芯片封装中，半导体集成电路芯片的电极端子上形成了焊锡点，介于该焊锡点，与形成在电路衬底上的连接端子一次性结合是一般的做法。
[0003]然而，为了将电极端子数超过5000的下一代半导体集成电路组装到电路衬底上，形成对应于100μm以下的窄间距的焊锡点是有必要的，但是，现在的焊锡点形成技术，要适用于它是困难的。还有，形成对应于电极端子数的多个焊锡点是必要的，为了降低成本，缩短每个芯片的搭接头的高生产性也被要求。
[0004]同样，半导体集成电路，由于电极端子的增大从边缘电极端子向区域设置的电极端子发生着变化。还有，由于高密度化、高集成化的要求半导体工艺从90nm向60nm、45nm的进展是预想的到的。其结果，布线的精细化进一步发展，由于布线间电容的增加，高速化和电力损耗的问题进一步深化，布线层间的绝缘膜的低介电率化(Low-K)的要求进一步提高。这样的低介电率化(Low-K)的实现，是通过绝缘材料的多孔化(porous)而取得的，所以，机械强度低，成为半导体薄型化的障碍。还有，如上所述，构成区域设置的电极端子的情况，由于低介电率化(Low-K)的多孔膜上的强度问题，在区域设置的电极上形成焊锡点，以及倒装芯片封装自身都是有困难的。因此，要求了对应于今后的半导体工艺的进展的适用于薄型、高密度半导体的低荷重倒装芯片封装方法。
[0005]以前，作为焊锡点的形成技术，开发了电镀法以及投影(screen)印刷法等。电镀法适用于窄间距，但是工序复杂在生产性上有问题，还有，投影印刷法，在生产性上很好，但是由于使用掩模，无法适用于窄间距。
[0006]正因如此，最近，开发了几种在半导体集成电路芯片或电路衬底的电极上有选择地形成焊锡点的技术。这些技术，不只是适用于精细焊锡点的形成，还可以一次性形成大量焊锡点，所以生产性也好，作为适用于向下一代半导体集成电路的电路衬底的组装的技术受到注目。
[0007]例如，专利文献1及专利文献2所揭示的技术，将由焊锡粉和流动物形成的混合物的焊锡糊(soldpaste)，涂满表面上形成了电极的衬底上，然而通过对加热衬底，使焊锡粉熔融，有选择地在湿润性高的电极上形成焊锡点。
[0008]还有，专利文献3所揭示的技术，是将以有机酸铅盐和金属锡为主要成分的糊状组成物(化学反应析出型焊锡)，满涂在形成了电极的衬底上，通过加热衬底，引起Pb和Sn的置换反应，使Pb/Sn合金有选择地析出在衬底的电极上。
[0009]然而，上述专利文献1至3中揭示的技术，每一项都供给的是将糊状组成物涂在衬底上，所以就会产生局部的厚度或浓度的偏差，为此，每个电极上析出的焊锡量不同，无法得到均匀的焊锡点高度。还有，这些方法，供给的是在表面上形成的电极呈凸凹状的电路衬底上，涂布糊状组成物，所以，在凸部的电极上无法供给充分的焊锡量，要得到倒装芯片封装方法中所希望的必要地焊锡点高度是困难的。
[0010]但是，是用以前的焊锡点形成技术的倒装芯片封装，在焊锡点形成了的电路衬底上搭载半导体芯片后，为了将半导体芯片固定在电路衬底上，还需要将称为衬底中间层的树脂注入半导体芯片和电路衬底之间的工序。
[0011]因此，若将半导体芯片和电路衬底相对的电极端子间电连接的话，作为同时进行半导体芯片向电路衬底固定的方法，开发了使用异向性导电材料的倒装芯片封装技术(例如参照专利文献4)。这是在电路衬底和半导体芯片之间，供给含有导电性粒子的热硬化性树脂，通过在挤压电路衬底的同时，加热热硬化树脂，实现半导体芯片和电路衬底的电极端子间的电连接、和半导体芯片向电路衬底的固定的同时进行。
(专利文献1)日本专利公开2000-94179号公报
(专利文献2)日本专利公开平6-125169号公报(平6＝1994年)
(专利文献3)日本专利公开平1-157796号公报(平1＝1989年)
(专利文献4)日本专利公开2000-332055号公报
(专利文献5)日本专利公开2002-26070号公报
(专利文献6)日本专利公开平11-186334号公报(平11＝1999年)
(专利文献7)日本专利公开2004-260131号公报
(非专利文献1)安田真大他，《由含有低熔点金属填料自己组织化接合工艺》，第10次“电子设备中的微接合·组装技术”研讨会(10thSymposium on“Microjoing and Assembly Technology in Electronic-s”)，183—188页，2004年
(发明所要解决的课题)
[0012]然而，使用以上所述的异向性导电材料的倒装芯片封装，得到了通过介于导电性粒子的机械接触的电极间的电导通，但是要得到安定的导通状态是困难的。
[0013]还有，夹在相对电极间的导电性粒子，是通过树脂热硬化的凝聚力维持的，所以，有必要使热硬化性树脂的弹性率、热膨胀率等的特性，以及导电性粒子的粒径分布等特性一致，这就有工序控制难的课题。
[0014]也就是，使用异向性导电材料的倒装芯片封装，为了适用于连接端子超过5000的下一代半导体集成电路芯片，还残留着应该解决生产性以及信赖性方面的课题。
发明内容
[0015]本发明，是鉴于所述点而发明的，其主要目的在于：供给能够适用于下一代半导体集成电路的倒装芯片封装的，生产性及信赖性高的倒装芯片封装方法。还有，供给将本发明的倒装芯片封装方法的技术适用于焊锡点形成的焊锡点形成方法。
(为解决课题的方法)
[0016]本发明的倒装芯片封装方法，与具有多个连接端子的电路衬底相对设置具有多个电极端子的半导体芯片，电连接上述电路衬底的连接端子和上述半导体芯片的电极端子，是以包括：第一工序，向上述电路衬底和上述半导体芯片的间隙间，供给含有焊锡粉和气泡产生剂的树脂；第二工序，加热上述树脂，使包含在上述树脂中的上述气泡产生剂产生气泡；第三工序，加热上述树脂，使包含在上述树脂中的上述焊锡粉熔化；另外，在上述第二工序中，上述树脂，通过上述气泡产生剂产生的气泡的增大而被挤向该气泡外，从而使该树脂在上述电路衬底的连接端子和上述半导体芯片的电极端子之间自行聚合；上述第三工序中，通过上述连接端子和上述电极端子之间自行聚合了的上述树脂中所含有的焊锡粉的熔化，在上述连接端子和上述电极端子之间形成连接体，为特征的。
[0017]上述第三工序后，最好的是还包含硬化上述连接端子和上述电极端子之间的上述树脂的工序。还有，上述第二工序中的加热温度，最好的是实施比上述第三工序中的加热温度低的温度。
[0018]在最好的实施方式中，上述气泡产生剂，最好的是由在上述树脂被加热时沸腾的材料形成。还有，上述气泡产生剂的沸点，最好的是比上述焊锡粉的熔点低。另外，上述气泡产生剂，也可以是由沸点不同的两种以上的材料形成的。
[0019]在最好的实施方式中，上述气泡产生剂，是由在树脂被加热时，因气泡产生剂的热分解产生气体的材料形成。还有，上述气泡产生剂，还可以由含结晶水的化合物形成，在上述树脂被加热时分解产生水蒸气。
[0020]在最好的实施方式中，上述第二、第三工序，是在连续上升树脂的加热温度的状态下进行的。
[0021]在最好的实施方式中，上述第二工序，是在边调整上述电路衬底和上述半导体芯片之间的间隙间隔边进行的。还有，上述第二工序，最好的是在边加宽上述电路衬底和上述半导体芯片之间的间隙间隔边进行的。
[0022]在最好的实施方式中，上述第三工序，是在边调整上述电路衬底和上述半导体芯片之间的间隙间隔边进行的。上述第三工序，最好的是在边缩小上述电路衬底和上述半导体芯片之间的间隙间隔边进行的。
[0023]在最好的实施方式中，上述第一工序，是通过向上述电路衬底上，供给了含有上述焊锡粉和气泡产生剂的树脂后，在该树脂表面上设置上述半导体芯片的方法进行的。
[0024]在最好的实施方式中，上述第三工序，包括熔化包含在上述树脂中的焊锡粉的表面的工序，上述第三工序中形成的连接体，处于上述焊锡粉相互之间的界面已金属结合的状态。
[0025]在最好的实施方式中，具有上述多个电极端子的半导体芯片，是由半导体裸芯片搭载在具有上述多个电极端子的衬底中间层(interposer)上构成的。
[0026]在最好的实施方式中，上述第三工序后，还包括向上述电路衬底和上述半导体芯片之间的间隙里供给底部填充材料，然后，硬化该底部填充材料的工序。
[0027]本发明的焊锡点形成方法，是在具有多个电极的衬底上形成焊锡点，是以包括：第一工序，相对于上述衬底设置平板，向该平板和上述衬底的间隙中供给含有焊锡粉和气泡产生剂的树脂；第二工序，加热上述树脂，使包含在上述树脂中的上述气泡产生剂产生气泡；第三工序，加热上述树脂，使包含在上述树脂中的上述焊锡粉熔化；另外，在上述第二工序中，上述树脂，通过上述气泡产生剂产生的气泡的增大而被挤向该气泡外，从而使该树脂在上述衬底的电极上自行聚合，在上述第三工序中，通过上述电极上自行聚合了的上述树脂中所含有的焊锡粉的熔化，在上述电极上形成焊锡点，为特征的。
[0028]在最好的实施方式中，上述第三工序中的加热温度，是实施比上述第二工序的加热温度高的温度。
[0029]在最好的实施方式中，上述气泡产生剂，是由在上述树脂被加热时沸腾的材料形成的。还有，上述气泡产生剂的沸点，最好的是比上述焊锡粉的熔点低。
[0030]在最好的实施方式中，上述气泡产生剂，在上述树脂被加热时，由上述气泡产生剂的热分解产生气体的材料形成。
[0031]在最好的实施方式中，上述第二工序，是在边调整上述衬底和上述平板之间的间隙间隔边进行的。还有，上述第三工序，是在边调整上述衬底和上述平板之间的间隙间隔边进行的。
[0032]在最好的实施方式中，上述第一工序，是通过向上述衬底上，供给了含有上述焊锡粉和气泡产生剂的树脂后，在该树脂表面上设置平板的方法进行的。
[0033]在最好的实施方式中，在上述平板的相对于上述衬底的平面上，与形成在上述衬底上的多个电极相对的位置，形成了与上述电极近乎相同形状的凸部。还有，最好的是至少上述凸部的表面是用金属形成的。
[0034]在最好的实施方式中，在上述第三工序后，还包括除去上述树脂及上述平板的工序。
[0035]在最好的实施方式中，上述第三工序，包括熔化包含在上述树脂中的焊锡粉的表面的工序，上述第三工序中形成的焊锡点，处于上述焊锡粉相互之间的界面已金属结合的状态。
[0036]本发明的倒装芯片封装体，与具有多个连接端子的电路衬底相对设置具有多个电极端子的半导体芯片，电连接上述电路衬底的连接端子和上述半导体芯片的电极端子，是以：上述连接端子和上述电极端子，通过向上述电路衬底和上述半导体芯片的间隙间供给的含有焊锡粉和气泡产生剂的树脂在上述连接端子和上述电极端子之间自行聚合，且该自行聚合了的上述树脂中的焊锡粉熔化，从而形成在上述连接端子和上述电极端子之间的连接体而被电连接，为特征的。
[0037]在最好的实施方式中，上述电路衬底，是由具有多个外部端子的衬底中间层构成，上述倒装芯片封装体，成为上述半导体芯片搭载在上述衬底中间层上的CSP或BGA的构成。
[0038]在最好的实施方式中，上述倒装芯片封装体，最好的是由供给在上述电路衬底和上述半导体芯片之间的树脂固定的。
[0039]本发明的倒装芯片封装装置，将半导体芯片倒装芯片封装到电路衬底上，是以包括：支撑器，将上述半导体芯片及上述电路衬底，以具有一定的间隙且相互相对的方式支撑；提供器，向上述半导体芯片和上述电路衬底的间隙里，供给含有焊锡粉和气泡产生剂的树脂；加热器，加热上述树脂；另外，上述加热器，具有第一加热器和第二加热器，上述第一加热器，控制到使包含在上述树脂中的上述气泡产生剂产生气泡的温度，上述第二加热器，控制到熔化包含在上述树脂中的焊锡粉的温度，为特征的。
[0040]在最好的实施方式中，由上述第一加热器加热了的上述树脂，通过由上述气泡产生剂产生的气泡的膨胀而被挤向该气泡外，从而使该树脂在上述电路衬底的连接端子和上述半导体芯片的电极端子之间自行聚合；通过第二加热器，使上述连接端子和上述电极端子之间自行聚合了的上述树脂中所含有的焊锡粉熔化，在上述连接端子和上述电极端子之间形成连接体。
[0041]本发明的焊锡点形成装置，在形成于衬底的多个电极上形成焊锡点，是以包括：支撑器，在相对于上述衬底且具有一定间隙的位置支撑平板；提供器，向上述衬底和上述平板的间隙里，供给含有焊锡粉和气泡产生剂的树脂；加热器，加热上述树脂；另外，上述加热器，具有第一加热器和第二加热器，上述第一加热器，控制到使包含在上述树脂中的上述气泡产生剂产生气泡的加热温度，上述第二加热器，控制到熔化包含在上述树脂中的焊锡粉的加热温度。
[0042]在最好的实施方式中，由上述第一加热器加热了的上述树脂，通过由上述气泡产生剂产生的气泡的膨胀而被挤向该气泡外，在上述衬底的电极上自行聚合；通过上述第二加热器，使上述电极上自行聚合了的上述树脂中所含有的焊锡粉熔化，在上述电极上形成焊锡点。
-发明的效果-
[0043]本发明所涉及的倒装芯片封装方法，通过加热供给在电路衬底和半导体芯片的间隙间的含有焊锡粉和气泡产生剂的树脂，使气泡产生剂产生气泡，通过由该气泡的膨胀将树脂向气泡外推出，可以使该树脂在电路衬底的连接端子和半导体芯片的电极端子之间自行聚合。并且，通过将半导体芯片向电路衬底挤压，又使相对端子间自行聚合了的树脂中所含有的焊锡粉之间相互接触，可以使端子之间电连接。由此，有效的使树脂中分散的焊锡粉自行聚合到端子间，就能实现均匀性好，生产性高的倒装芯片封装体。
[0044]还有，由上述方法形成端子间连接体后，通过硬化残留在电路衬底和半导体芯片的间隙间的树脂，可以将半导体芯片固定到电路衬底上，通过一连的工序，能够使半导体芯片及电路衬底的端子间电连接、和半导体芯片向电路衬底的固定同时进行，就能够实现具有更高生产性的倒装芯片封装体。
[0045]还有，同样，在本发明的焊锡点形成方法，也是通过包含于供给在衬底和平板的间隙的气泡产生剂所产生的气泡的膨胀，使树脂在衬底电极上自行聚合，使该树脂中含有的焊锡粉熔融，由此，可以在电极上形成由焊锡粉形成的焊锡点。由此，就可以使树脂中分散的焊锡粉有效的自行聚合到电极上，也就能实现均匀性好，且生产性高的焊锡粉。
附图说明
[0046]图1(a)至图1(c)，是表示使用包含对流添加剂的树脂的倒装芯片封装方法的工序剖面图。
图2(a)至图2(d)，是表示本发明第一实施方式的倒装芯片封装方法的工序剖面图。
图3(a)至图3(d)，是表示本发明第一实施方式的倒装芯片封装方法的工序剖面图。
图4，是表示本发明的树脂加热温度曲线的图。
图5，是表示本发明的树脂其他加热温度曲线的图。
图6，是说明本发明的树脂的自行聚合的图。
图7(a)至图7(c)，是说明本发明中变动电路衬底和半导体芯片的间隙的工序的工序剖面图。
图8(a)至图8(c)，是说明本发明中变动电路衬底和半导体芯片的间隙的工序的工序剖面图。
图9(a)、图9(b)，是说明本发明中变动电路衬底和半导体芯片的间隙的工序的工序剖面图。
图10，是说明本发明中含有两种以上气泡产生剂的树脂的自行聚合的图。
图11，是表示本发明中焊锡粉材料的图。
图12，是表示本发明中气泡产生剂材料的图。
图13，是表示本发明中气泡产生剂材料的图。
图14，是表示本发明中连接体构造的图。
图15(a)至图15(d)，是表示本发明第二实施方式中焊锡点形成方法工序的工序剖面图。
图16(a)至图16(d)，是表示本发明第二实施方式中焊锡点形成方法工序的工序剖面图。
图17，是表示本发明中平板构成的图。
图18，是表示本发明中平板其他构成的图。
图19，是表示本发明中向衬底里埋入电极的构成的图。
图20，是表示本发明中通过焊锡点形成方法得到的试验材料的各工序中照片的图。
图21，是表示本发明中通过焊锡点形成方法得到的试验材料的照片的图。
图22，是表示本发明中倒装芯片封装装置构成的方框图。
图23，是表示本发明中倒装芯片封装体的CSP构成的图。
(符号说明)
[0047]4           连接端子
      12          电极端子
      13、14      树脂
      15          对流添加剂
      16            焊锡粉
      17            熔融的焊锡粉
      18            连接体
      19            焊锡点
      20            半导体芯片
      21            电路衬底
      22            连接体
      30、30a、30b  气泡
      31            衬底
      32            电极
      35            底部填充材料
      40            平板
      41            凸部
      42            金属
      45            外部端子
      50            倒装芯片封装装置(焊锡点形成装置)
      51            支撑器
      52            提供器
      53            加热器
      54            第一加热器
      55            第二加热器
      100           倒装芯片封装体
具体实施方式
[0048]本发明申请人，进行了有关可能适用于下一代半导体集成电路芯片的倒装芯片封装，在专利申请2004-267919号的申请说明书中，提出了能够适用于下一代半导体集成电路的倒装芯片封装，均匀性及信赖性高的倒装芯片封装方法的方案。
[0049]图1(a)至图1(c)，表示了本发明申请人在上述专利申请说明书中揭示了的倒装芯片封装方法的基本工序图。
[0050]首先，如图1(a)所示那样，在形成了多数连接端子11的电路衬底21上，供给含有焊锡粉(未图示)及所规定添加剂15的熔融树脂13。
[0051]接下来，如图1(b)所示那样，使供给到电路衬底21上的树脂13的表面用半导体芯片20接触。这时，具有多个电极端子12的半导体芯片20，与具有多个连接端子11的电路衬底21相对设置。并且，在这种状态下加热熔融树脂13，熔融树脂13中分散地焊锡粉。
[0052]熔融了的焊锡粉，如图1(c)所示那样，在熔融树脂13中相互接合，通过在湿润性高的连接端子11和电极端子12之间的自行聚合，形成连接体22。最后，硬化树脂13，将半导体芯片20固定到电路衬底21上，完成倒装芯片封装体。
[0053]这个方法的特征，是在含有焊锡粉的树脂13中，还含有在焊锡粉熔融温度沸腾的添加剂15这一点。也就是，在焊锡粉熔融的温度下，树脂13中含有的添加剂15(以下称对流添加剂)沸腾，通过该沸腾的对流添加剂15与熔融树脂13对流，促进树脂13中分散了的熔融焊锡粉的移动，进行熔融焊锡粉的均匀接合。其结果，均匀成长的熔融焊锡粉，在湿润性高的电路衬底21的连接端子11和半导体芯片20的电极端子12之间自行聚合，由此，在连接端子11和电极端子12之间就能够形成均匀性高的连接体22。
[0054]在此，含有焊锡粉的熔融树脂13，可以考虑它是熔融焊锡粉自由浮游、移动的“海洋”。然而，熔融焊锡粉的结合过程，是在极短的时间(典型的是5至10秒)中完成，尽管是设置了焊锡粉可以移动的“海洋”，也会因为局部进行而完结，无法得到均匀的熔融焊锡粉。
[0055]也就是，上述方法，是打算通过再在含有焊锡粉得熔融树脂13中加入对流添加剂15，附加强制移动熔融了的焊锡粉的方法(对流作用)。
[0056]本发明，起始于与它相同的技术视点，用与上述方法不同的方法，有效的在端子间自行聚合熔融了的焊锡粉，用以提出可能形成均匀的连接体的新的倒装芯片封装方法。
[0057]还有，使该倒装芯片封装方法中的新方法适用于焊锡点形成方法，有效的使熔融焊锡粉在衬底电极上自行聚合，用以提出能够形成均匀焊锡点的焊锡点形成方法。
[0058]以下，参照附图说明本发明的实施方式。以下的附图中，为了简化说明，将实际上具有相同功能的构成要素用相同的参照符号表示。本发明不只限于以下的实施方式。
[0059](第一实施例)
图2(a)至图2(d)、以及图3(a)至图3(c)，是表示本发明的实施方式中倒装芯片封装方法的基本工序的工序剖面图。
[0060]首先，如图2(a)所示那样，在具有多个连接端子11的电路衬底21上，供给含有焊锡粉(例如Sn至Ag系列焊锡等)16和气泡产生剂(例如异丙醇等)的树脂(例如环氧树脂)14。接下来，如图2(b)所示那样，树脂14表面上，将具有多个电极端子12的半导体芯片20相对于电路衬底21设置。这时，半导体芯片20的电极端子12被对准电路衬底21的连接端子11的位置。
[0061]另外，在此表示的工序，先将电路衬底21和半导体芯片20保持一定的间隙(例如10μm至80μm)相互相对设置，然后，将含有焊锡粉和气泡产生剂的树脂14供给这个间隙亦可。
[0062]这种状态下，将树脂14加热到所规定的温度(例如100℃至150℃)的话，如图2(c)所示那样，树脂14中所含的气泡产生剂产生气泡30。并且，如图2(d)所示那样，由于膨胀的气泡30，树脂14被推向这个气泡30外。
[0063]推出了的树脂14，如图3(a)所示那样，在电路衬底21的连接端子11的界面、和半导体芯片20的电极端子21的界面之间呈柱状(如近似圆柱状)自行聚合。接下来，进一步加热树脂14的话，如图3(b)所示那样，树脂14中所含的焊锡粉16熔融，端子间自行聚合了的树脂14中所含有的焊锡粉16之间熔融结合。连接端子11及电极端子12，对于熔融结合了的焊锡粉17而言湿润性高，如图3(c)所示那样，端子间形成了由熔融焊锡粉形成的连接体18。由此，就可以得到半导体芯片搭载在电路衬底上的倒装芯片封装体100。
[0064]另外，接下来，如图3(c)所示那样，在端子间形成连接体18后，通过硬化端子间残存的树脂14，可以将半导体芯片20固定到电路衬底21上。
[0065]还有，若有必要的话，如图3(d)所示那样，在半导体芯片20和电路衬底21的间隙里注入底部填充材料35后，通过硬化底部填充材料35，进一步强固半导体芯片20向电路衬底21的固定。
[0066]根据本发明，通过加热供给电路衬底21和半导体芯片20的间隙间的包含焊锡粉16和气泡产生剂的树脂14，使气泡产生剂产生气泡30，再由该气泡的膨胀将树脂14向气泡外推出，可以使树脂14在电路衬底21的连接端子11和半导体芯片20的电极端子12之间自行聚合。并且，通过熔融包含在端子间自行聚合了的树脂14中含有的焊锡粉16，在湿润性高的端子间可以自行聚合形成由熔融焊锡粉形成的连接体22。由此，就可以有效的使树脂14中分散的焊锡粉16在端子间自行聚合，也就可以实现均匀性好，且生产性高的倒装芯片封装体100。
[0067]再有，通过上述方法在端子间形成连接体22后，通过硬化端子间残存的树脂14，可以将半导体芯片20固定到电路衬底21上，再由一连串的工序，可以使半导体芯片20及电路衬底21端子间的电连接、和半导体芯片20向电路衬底21的固定同时进行，就能够实现生产性更高地倒装芯片封装体100。
[0068]然而，图2(a)至图2(d)、以及图3(a)至图3(c)所表示的各构成的大小及相对的位置关系(例如焊锡粉16的大小、电路衬底21和半导体芯片20之间的间隙等)，是为了说明容易简单的表示了，不是表示的实际的大小。
[0069]图4，是在上述的倒装芯片封装方法中，表示了树脂14的加热工序中的温度曲线的一个例子的图。横轴表示树脂14的加热时间，纵轴表示树脂14的加热温度。
[0070]如图4所示那样，首先，将树脂14加热到使树脂14中含有的气泡产生剂产生气泡30的温度T1。保持这个温度T1一定时间t1，在这个期间，由产生的气泡30的膨胀，将树脂14向气泡30外推出，在相对端子间以柱状自行聚合。在此，温度T1，设定为例如100℃至180℃，一定的时间t1，设定为例如5秒至10秒。
[0071]接下来，将树脂14加热到树脂14中所包含的焊锡粉16的熔融温度T2。保持这个温度T2一定时间t2，在这期间，通过端子间自行聚合了的树脂14中含有的焊锡粉16之间熔融结合，在湿润性高的端子间形成连接体18。并且，最后将树脂14加热到树脂14硬化的温度T3。保持这个温度T3一定的时间t3，通过硬化相对端子间残存的树脂14，将半导体芯片20固定到电路衬底10上。
[0072]在此，温度T2，设定为例如150℃至250℃，一定的时间t2，设定为例如5秒至15秒。还有，温度T3，设定为例如150℃至250℃，一定的时间t3，设定为例如10秒至20秒。
[0073]本发明的倒装芯片封装方法，在焊锡粉熔融前，有必要是含有焊锡粉的树脂在端子间自行聚合。为此，产生树脂中含有的气泡产生剂产生气泡的温度T1，有必要设定为比使焊锡粉熔融的温度T2低的温度。也就是，气泡产生剂沸腾产生气泡的情况，气泡产生剂的沸点，要求比焊锡粉的熔点低。
[0074]图5，是表示满足这样的关系，在树脂14的加热工序中温度曲线的其他例的图。如图5所示那样，使树脂14的加热温度从例如室温T0连续上升。树脂14的加热温度，从T0上升到T1的时间t1期间，树脂14中含有的气泡产生剂产生气泡，从T1上升到T2的时间t2期间，通过使树脂14中含有的焊锡粉熔融，就可以进行本发明的倒装芯片封装方法。另外，端子间形成连接体18后，通过使树脂14的加热温度上升到T3，硬化残存在端子间的树脂14，就可以将半导体芯片20固定到电路衬底21上。
[0075]在此，参照图6(a)及图6(b)简单说明本发明的倒装芯片封装方法中成为重点的树脂14向端子间的自行聚合的机械原理。
[0076]图6(a)，是表示树脂14由生成的气泡(未图示)推出电路衬底10的连接端子11和半导体芯片20的电极端子21之间的状态的图。接触连接端子11和电极端子12的树脂14，它界面的界面张力(所谓引起树脂湿润膨胀的力)Fs，比由树脂的粘度η产生的应力Fη还大，所以，在连接端子11及电极端子12的整个面上扩展，最终以端子11、12的端部为界限形成柱状树脂。为此，即便是连接端子11和电极端子12的相对位置多少有点偏离，也确实可以由端子间的界面张力自行聚合树脂14。
[0077]另外，端子间自己成长形成的柱状树脂14中，如图6(b)所示那样，由于气泡30的膨胀(或移动)施加了应力Fb，由于树脂14的粘度η产生的逆向应力Fη的作用，可以维持其形状，一旦自行聚合了的树脂14不会消失。还有，树脂14和气体(例如气泡30)的界面上，作用着表面张力(或者气-液界面张力)，这个表面张力也起到维持柱状树脂14的形状的作用。
[0078]如上所述，本发明的倒装芯片封装方法中，气泡产生剂产生的气泡的膨胀，担负着使树脂在端子间自行聚合的作用，但是，为了进一步提高它作用的效果，在树脂的加热工序中，变动电路衬底21和半导体芯片20的间隙间隔(gap)是有效的。以下，参照图7至图9进行说明。
[0079]图7(a)至图7(c)，是表示树脂14的加热工序中，使树脂14中含有的气泡产生剂产生气泡，由该气泡的膨胀在端子间自行聚合树脂14的工序中，变动电路衬底21和半导体芯片20的间隙的例的图。[0080]图7(a)，是表示在电路衬底21和半导体芯片20的间隙中，供给了含有焊锡粉和气泡产生剂(未图示)的树脂14的状态的图，但是，这时的电路衬底21和半导体芯片20的间隔L1窄。
[0081]从这个状态，如图7(b)所示那样，边加宽电路衬底21和半导体芯片20的间隔L2边加热树脂14。在这个加热过程中，由气泡产生剂产生的气泡30徐徐膨胀，并在这个过程中，电路衬底21和半导体芯片20的间隔L2也在增大，所以，可以使最初供给的电路衬底21和半导体芯片20的间隙中的树脂14，有效的在端子11、12之间自行聚合。这个例中，最终到自行聚合端子11、12间树脂14为止、边徐徐扩大间隙L3边进行(图7(c))。
[0082]图8(a)至图8(c)，表示在加热树脂14的工序中，熔融端子间自行聚合了的树脂14中含有的焊锡粉16，在形成端子间连接体18的工序中，变动电路衬底21和半导体芯片20间隙的例的图。
[0083]图8(a)，表示端子11、12间树脂14自行聚合后的状态，电路衬底21和半导体芯片20的间隙L3，与图7(c)所表示的间隙相同。这种状态下，端子间的树脂14中，存在一定比例的焊锡粉16，但是，维持这个间隙L3，熔融焊锡粉16在端子间形成连接体18时，考虑不能充分取得端子间的电连接。
[0084]因此，在这种状态下，熔融焊锡粉16，在端子间形成连接体18之际，如图8(b)所示那样，只要边徐徐变窄电路衬底21和半导体芯片20的间隙L4，边进行树脂14的加热工序，在焊锡粉16逐渐熔融的过程中，间隙L4渐渐变窄，所以如图8(c)所示那样，最终在间隙L5的状态下形成端子间连接体18时，可以在端子间保持充分的面积形成连接体18。由此，可以在端子间取得充分的电连接。
[0085]还有，如图9(a)、图9(b)所示那样，变动电路衬底21和半导体芯片20的间隙亦可。也就是，如图9(a)所示那样，在窄间隙L1的状态时在端子间形成的连接体18a，它的侧面表面积窄，所以捕捉周围存在的熔融的焊锡粉(未图示)的比例就小。然而，如图9(b)所示那样，宽的间隙L2的状态下，连接体18b，虽然很细，但由于它的侧面积宽，所以，捕捉周围存在的熔融焊锡粉的比率变高。其结果，连接体18b向横方向成长，可以在端子间形成具有充分面积的连接体18，所以，就能够在端子间取得充分的电连接。
[0086]另外，端子间形成的连接体18上，会产生小空隙(xoid)，即便是这种情况，通过缩小电路衬底21和半导体芯片20的间隙，可以除去连接体18内产生的空隙。
[0087]还有，即便是端子间形成的连接体18的大小产生偏差的话，通过缩小电路衬底21和半导体芯片20的间隙，可以统一连接体18的高度，还可以得到端子间电连接的均一。
[0088]另外，图7至图9，说明了将电路衬底21和半导体芯片20的间隙，增大或缩小的一定方向变动的例，但是，使间隙进行周期性变动，也可以得到同样地作用效果。
[0089]本发明的倒装芯片封装方法的特征之一，是使树脂中含有的气泡产生剂产生气泡，由该气泡的膨胀，使树脂在端子间自行聚合这一点。图2(a)至图2(c)、以及图3(a)至图3(d)所表示的例中，作为气泡产生剂，使用的是一种材料的，但是，使用例如沸点不同的两种以上的材料的气泡产生剂也是可以的。
[0090]图10，是表示沸点不同的两种气泡产生剂包含在树脂14中的例子的图，表示了加热树脂14，气泡产生剂产生气泡的状态。沸点低的气泡产生剂产生的气泡30a，与沸点高的气泡产生剂产生的气泡30b相比，气泡膨胀的时间进程大。
[0091]膨胀了的气泡30b，由其膨胀的压力，将树脂14向气泡外推出，就可以将它的一部分推至电路衬底21的连接端子11和半导体芯片20的电极端子12之间，还有被剩下的树脂14。因此，由后一步膨胀的气泡30b再一次重复向气泡外推出这部分剩下的树脂14的动作，就能够有效的将树脂14推到端子间。其结果，端子间就能够形成均匀性好的连接体。
[0092]在此，本发明的倒装芯片封装方法中使用的树脂14，没有特别限定焊锡粉16和气泡产生剂，它们还可以分别是以下的材料。[0093]树脂14，可以使用环氧树脂、苯酚树脂、硅树脂等热硬化性树脂，或者是热塑性树脂，至少最好的是在树脂14的加热工序中具有可流动的粘度。还有，树脂14，可以使糊状、或片状物。再有，为了提高焊锡粉十六的湿润性，在树脂中或者是掺入了流动剂(flux)或者是采用具有流动作用的还原性树脂均可。
[0094]还有，焊锡粉16以及气泡产生剂，可以从图11、图12所示的材料中，适当的组合使用。另外，在组合的时候，要求气泡产生剂的沸点比焊锡粉的熔点低。另外，焊锡粉在树脂14中的含有率，最好的是如0.5％至30％的体积百分率。还有，气泡产生剂在树脂14中的含有率，最好的是如0.1％至20％的重量百分率。
[0095]作为气泡产生剂，图12所示的材料以外，还可以使用由气泡产生剂的分解产生的气泡(H2O、CO2、N2等)的材料。作为这样的气泡产生剂，可以使用图13所列举的材料。例如，使用含结晶水的化合物(氢氧化铝)时，在树脂被加热时热分解，产生水蒸气气泡。另外，在这种材料的选择中，作为标准的不是沸点而是分解温度。
[0096]可是，图3(a)至图3(c)所示的例子中，使端子间自行聚合了的树脂14中所含有的焊锡粉16熔融形成了连接体18，但是，并非要焊锡粉16全部熔融，如图14所示那样，只是焊锡粉16的表面熔融，焊锡粉之间的界面成为金属结合状态，也能达成本发明的目的。例如，作为焊锡粉，使用在Cu的表面镀Sn的情况，焊锡粉之间相互接触，通过它表面的Sn的熔融，焊锡粉之间的界面形成SnCu结合的状态的连接体18。
[0097]还有，半导体芯片20，还包含以具有多个电极端子(land)的半导体裸芯片搭载在衬底中间层上的形式，倒装芯片封装到电路衬底21上的构成件。
[0098](第二实施方式)
第一实施方式说明的倒装芯片封装方法，因为是以使树脂中含有的气泡产生剂产生气泡，由该气泡的膨胀，树脂在端子间自行聚合，再通过该树脂中含有的焊锡粉熔融，在端子间自行聚合形成连接体为特征的，所以，这个技术，也可以适用于焊锡点形成方法。
[0099]以下，参照图15(a)至图15(d)、以及图16(a)至图16(d)说明本发明的第二实施方式的焊锡点形成方法的基本工序。
[0100]首先，如图15(a)所示那样，在具有多个电极32的衬底31上，供给含有焊锡粉16和气泡产生剂(未图示)的树脂14。接下来，如图15(b)所示那样，树脂14表面上，设置平板40。另外，在此表示的工序，还可以是先将衬底31和平板40保持一定的间隙设置，然后，将含有焊锡粉和气泡产生剂的树脂14供给这个间隙。
[0101]这种状态下，将树脂14加热的话，如图15(c)所示那样，树脂14中所含的气泡产生剂产生气泡30。并且，如图15(d)所示那样，由于膨胀的气泡30，树脂14被推向这个气泡30外。
[0102]推出了的树脂14，如图16(a)所示那样，在衬底31的电极32的界面、和平板40的界面之间呈柱状自行聚合。接下来，进一步加热树脂14的话，如图16(b)所示那样，树脂14中所含的焊锡粉16熔融，电极31上自行聚合了的树脂14中所含有的焊锡粉16之间熔融结合。电极32，对于熔融结合了的焊锡粉17而言湿润性高，如图16(c)所示那样，形成由电极32上熔融焊锡粉形成的焊锡点19。最后，如图16(d)所示那样，通过除去树脂14和平板40，就可以得到电极32上形成了焊锡点19的衬底31。
[0103]根据本发明，通过加热供给衬底31和平板40的间隙间的包含焊锡粉16和气泡产生剂的树脂14，使气泡产生剂产生气泡30，再由该气泡的膨胀将树脂14向气泡外推出，可以使树脂14在衬底31的电极32和平板40之间自行聚合。并且，通过熔融包含在电极32上自行聚合了的树脂14中含有的焊锡粉16，在湿润性高的电极32上可以形成由熔融焊锡粉形成的焊锡点19。由此，就可以有效的使树脂14中分散的焊锡粉16在电极32上自行聚合，也就可以在电极上形成均匀性好，且生产性高的焊锡点。
[0104]另外，在本实施方式的焊锡点形成方法中，也可以适用第一实施方式中倒装芯片封装方法中所说明的种种方法。
[0105]也就是，树脂14的加热工序中的温度曲线，可以适用图4或图5所表示的曲线。还有，衬底31和平板40的间隙变动，由可以适用图7或图8所示的方法。还有，气泡产生剂，适用如图10所示的沸点不同的两种以上的材料亦可。还有，和如图11所示的一样，熔融焊锡粉的表面，在焊锡粉之间的界面形成金属结合状态的焊锡点亦可。
[0106]还有，使用的树脂14、焊锡粉16、以及气泡产生剂，可以适宜的选择使用倒装芯片封装方法说明了的材料。
[0107]可以，图15(a)至图15(d)、以及图16(a)至图16(d)所示的方法中，使用的是平板40表面的平面，但是，如图17所示那样，在与形成在衬底31上的多个电极32相对的位置上，使用形成了与电极32近似同一形状的凸部41的平板40亦可。正如这样，在衬底31和平板40的间隙中，通过设置大的高差，树脂14在间隙小的电极32上容易自行聚合，其结果，就能够形成均匀的焊锡点。这个高差，相对于衬底31和平板40的间隙的大小高差的比率、或树脂粘度等，决定最合适的高度。
[0108]还有，如图18所示那样，至少上述凸部41的表面上，形成了金属42，可以提高对于焊锡粉16的湿润性，就可以更容易形成焊锡点。
[0109]在此，具有凸部41的平板40可以由种种方法形成，但是，还可以用例如，具有精细凹凸的模型挤压树脂薄膜等的被加工材料整体形成的方法形成。
[0110]另外，如图19所示那样，在电极32埋入衬底31的情况下，因为树脂14应该自行聚合的位置没有决定，在平板40上设置凸部41的做法，对这种情况特别有效。作为埋入了电极32的衬底31，例如可以举出通过复制形成电极32的。还有，可以例举由其他的材料(焊锡掩模等)填满邻接电极间间隙的例。
[0111]图20(a)至图20(d)，是表示由图15(a)至图15(d)、及图16(a)至图16(d)所示的焊锡点形成方法所得到的试料的各工序中的照片。[0112]图20(a)，是在衬底和平板的间隙供给包含焊锡粉(SnAgCu；熔点220℃)、和气泡产生剂(盐酸二甲基胺；沸点171℃)的树脂(环氧树脂)阶段的照片。
[0113]图20(b)，是表示树脂加热工序中，从树脂中气泡产生剂产生气泡的状态的照片。图20(c)，是表示电极上树脂自行聚合的状态的照片。图20(d)，是熔融电极上自行聚合了的树脂中的焊锡粉，在电极上形成焊锡点的状态的照片。可以确认焊锡点在电极上自行聚合形成。
[0114]还有，图21，是在7mm×7mm的衬底(电极面积μφ，电极数165个)上，供给分别包含作为焊锡粉，SnAgCu(粒径10μm至25μm)40％重量百分比，作为气泡产生剂，异丙醇3％重量百分比的双酚F型环氧系树脂，由本发明的方法形成焊锡点的状态的照片。如图21所示那样，所有的电极上均匀的形成焊锡点，在电极以外的衬底上，没有观察到焊锡粉的残留。
[0115]以上，说明了本发明所涉及的倒装芯片封装方法、及衬底间连接方法，而如，进行倒装芯片封装方法，制造倒装芯片封装体的装置，或者，制造带焊锡点衬底，可由图22的方框图所示的制造装置50实现。
[0116]如图22所示那样，制造装置50，是由：将半导体芯片20和电路衬底10相互保持一定间隙相对支撑的支撑器51、向半导体芯片20和电路衬底21的间隙间供给含有焊锡粉16和气泡产生剂的树脂14的提供器52、加热树脂14的加热器53，构成。还有，加热器53，包含加热控制树脂14中含有的气泡产生剂产生气泡的温度的第一加热器54，加热控制熔融树脂14含有的焊锡粉的温度的第二加热器55。
[0117]在此，支撑器41上，安装着合对半导体芯片20的电极端子、和电路衬底21的连接端子位置的定位机构。还有，提供器52，只要树脂呈糊状的，就可以利用分配器等，加热器53，可以使用加热板(热板)、热风以及赤外线加热的加热盒(开敞)等。
[0118]在这个制造装置50中，由第一加热器54加热的树脂14，通过气泡产生剂产生的气泡的膨胀，被向该气泡外推出，在电路衬底21的连接端子11盒半导体芯片20的电极端子12之间自行聚合，再有，通过第二加热器55通过熔融端子间自行聚合了的树脂14中所含的焊锡粉16熔融，在端子间形成连接体22，制造倒装芯片封装体。
[0119]另外，这个制造装置50，可以作为在衬底31上形成的多个电极32上形成焊锡点的焊锡点形成装置利用。
[0120]也就是，可以由支撑器51，在相对于衬底31一定间隙的相对位置支撑平板40，提供器52，在衬底31和平板40的间隙里供给含有焊锡粉16和气泡产生剂的树脂14，由加热器53，加热树脂14。
[0121]这个装置中，由第一加热器54加热的树脂14，通过气泡产生剂产生的气泡的膨胀被推出该气泡外，在衬底31的电极32上自行聚合，再有，由第二加热器55，通过熔融电极32上自行聚合了的树脂14中含有的焊锡粉16，在电极32上形成焊锡点19，就可以制造带焊锡点的衬底。
[0122]然而，使用含有焊锡粉的树脂，同时进行电连接半导体芯片和电路衬底的相对端子间、和半导体芯片向电路衬底的固定的方法，记载在专利文献5(专利公开2002-26070号公报)、以及专利文献6(专利公开平11-186334号公报)中。在此所记载的方法中，通过熔融树脂中所含有的焊锡粉，使半导体芯片和电路衬底的相对端子接触部位附着焊锡的同时，在其后，通过硬化树脂，将半导体芯片封入电路衬底固定，猛一看是与本发明相类似的技术。然而，在此记载的方法，也就是所谓的由逆向处理在端子间附着焊锡，所以，即便是在树脂封入后，树脂中分散着焊锡粉，不象本发明那样，使熔融了的焊锡粉，所以是与本发明在本质上是不同的技术。
[0123]还有，使用含有导电性粒子(低熔点金属填料)的树脂，电连接半导体芯片和电路衬底的相对端子间，同时将半导体芯片向电路衬底固定的方法，专利文献7(日本专利公开2004-260131号公报)以及非专利文献1(安田真大他，《由含有低熔点金属填料自己组织化接合工艺》，第10次“电子设备中的微接合·组装技术”研讨会(10thSymposium on“Microjoing and Assembly Technology in Electronics”)，183—188页，2004年)中有所记载。在此，揭示了使用具有氧化还原能力的树脂，基于树脂中含有的熔融了的金属填料的凝聚以及湿润，有选择地在端子间通过导电性粒子自行组织化形成连接体的技术。
[0124]然而，专利文献7和非专利文献1，只叙述到进行有选择地(自行聚合)接合工序的可能性为止，专门叙述了熔融导电性粒子的湿润性在端子间凝集(自行聚合)，所以，均匀的在端子间形成连接体是困难的。
[0125]本发明，含有导电性粒子的树脂，因为达不到熔融的导电性粒子能够自由移动的“海洋”的效果，所以，导电性粒子的接合无法均匀进行，其结果，认识到在端子间无法形成均匀的连接体，所以，通过适用本发明的方法，就可以高成品率的进行具有多个电极端子的半导体芯片的倒装芯片封装，供给了适用于批量生产的有用的方法。
[0126]以上，通过最好的实施方式说明了本发明，但是，这些叙述并不限定本发明，当然种种的变更都是可能的。例如，作为电路衬底21，如图22所示那样，在表面上形成多个连接端子11，在背面形成多个外部端子45的衬底中间层21。这种情况下，倒装芯片封装体，是由半导体芯片20搭载在衬底中间层21的CSP(chap·size·package)或BGA(ball·grid·array)的构成形成。
—产业上利用的可能性—
[0127]根据本发明，就可以供给适用于下一代半导体集成电路芯片组装的、生产性及信赖性高的倒装芯片封装方法、以及衬底间连接方法。

Claims (36)

1.一种倒装芯片封装方法，与具有多个连接端子的电路衬底相对设置具有多个电极端子的半导体芯片，电连接上述电路衬底的连接端子和上述半导体芯片的电极端子，其特征在于：
包括：
第一工序，向上述电路衬底和上述半导体芯片的间隙间，供给含有焊锡粉和气泡产生剂的树脂，
第二工序，加热上述树脂，使包含在上述树脂中的上述气泡产生剂产生气泡，以及
第三工序，加热上述树脂，使包含在上述树脂中的上述焊锡粉熔化，另外
在上述第二工序中，上述树脂，通过上述气泡产生剂产生的气泡的增大而被挤向该气泡外，从而使该树脂在上述电路衬底的连接端子和上述半导体芯片的电极端子之间自行聚合，
上述第三工序中，通过在上述连接端子和上述电极端子之间自行聚合了的上述树脂中所含有的焊锡粉的熔化，在上述连接端子和上述电极端子之间形成连接体。
2.根据权利要求1所述的倒装芯片封装方法，其特征在于：
在上述第三工序之后，还包含硬化上述连接端子和上述电极端子之间的上述树脂的工序。
3.根据权利要求1所述的倒装芯片封装方法，其特征在于：
上述第二工序中的加热温度，是比上述第三工序中的加热温度低的温度。
4.根据权利要求1所述的倒装芯片封装方法，其特征在于：
上述气泡产生剂，是由在上述树脂被加热时沸腾的材料形成。
5.根据权利要求4所述的倒装芯片封装方法，其特征在于：
上述气泡产生剂的沸点，比上述焊锡粉的熔点低。
6.根据权利要求4所述的倒装芯片封装方法，其特征在于：
上述气泡产生剂，是由沸点不同的两种以上的材料形成的。
7.根据权利要求1所述的倒装芯片封装方法，其特征在于：
上述气泡产生剂，是由在上述树脂被加热时，上述气泡产生剂的热分解而产生气体的材料形成的。
8.根据权利要求7所述的倒装芯片封装方法，其特征在于：
上述气泡产生剂，是由含结晶水的化合物形成的，在上述树脂被加热时分解，产生水蒸气。
9.根据权利要求3所述的倒装芯片封装方法，其特征在于：
上述第二、以及第三工序，是在边连续上升上述树脂的加热温度边进行的。
10.根据权利要求1所述的倒装芯片封装方法，其特征在于：
上述第二工序，是边调整上述电路衬底和上述半导体芯片之间的间隙间隔边进行的。
11.根据权利要求10所述的倒装芯片封装方法，其特征在于：
上述第二工序，是在边加宽上述电路衬底和上述半导体芯片之间的间隙间隔边进行的。
12.根据权利要求1所述的倒装芯片封装方法，其特征在于：
上述第三工序，是边调整上述电路衬底和上述半导体芯片之间的间隙间隔边进行的。
13.根据权利要求12所述的倒装芯片封装方法，其特征在于：
上述第三工序，是边缩小上述电路衬底和上述半导体芯片之间的间隙间隔边进行的。
14.根据权利要求1所述的倒装芯片封装方法，其特征在于：
上述第一工序，是通过向上述电路衬底上，供给了含有上述焊锡粉和气泡产生剂的树脂后，在该树脂表面上设置上述半导体芯片的方法进行的。
15.根据权利要求1所述的倒装芯片封装方法，其特征在于：
上述第三工序，包括熔化包含在上述树脂中的上述焊锡粉的表面的工序，
上述第三工序中形成的连接体，处于上述焊锡粉相互之间的界面已金属结合的状态。
16.根据权利要求1所述的倒装芯片封装方法，其特征在于：
具有上述多个电极端子的半导体芯片，是由半导体裸芯片搭载在具有上述多个电极端子的衬底中间层上构成的。
17.根据权利要求1所述的倒装芯片封装方法，其特征在于：
上述第三工序后，还包括向上述电路衬底和上述半导体芯片之间的间隙里供给底部填充材料，然后，硬化该底部填充材料的工序。
18.一种焊锡点形成方法，是在具有多个电极的衬底上形成焊锡点，其特征在于：
包括：
第一工序，相对于上述衬底设置平板，向该平板和上述衬底的间隙中供给含有焊锡粉和气泡产生剂的树脂，
第二工序，加热上述树脂，使包含在上述树脂中的上述气泡产生剂产生气泡，以及
第三工序，加热上述树脂，使包含在上述树脂中的上述焊锡粉熔化，另外
在上述第二工序中，上述树脂，通过上述气泡产生剂产生的气泡的增大而被挤向该气泡外，从而使该树脂在上述衬底的电极上自行聚合，
在上述第三工序中，通过在上述电极上自行聚合了的上述树脂中所含有的焊锡粉的熔化，在上述电极上形成焊锡点。
19.根据权利要求18所述的焊锡点形成方法，其特征在于：
上述第三工序中的加热温度，比上述第二工序的加热温度高。
20.根据权利要求18所述的焊锡点形成方法，其特征在于：
上述气泡产生剂，是由在上述树脂被加热时沸腾的材料形成的。
21.根据权利要求20所述的焊锡点形成方法，其特征在于：
上述气泡产生剂的沸点，比上述焊锡粉的熔点低。
22.根据权利要求18所述的焊锡点形成方法，其特征在于：
上述气泡产生剂，是由在上述树脂被加热时，上述气泡产生剂的热分解产生气体的材料形成。
23.根据权利要求18所述的焊锡点形成方法，其特征在于：
上述第二工序，是边调整上述衬底和上述平板之间的间隙间隔边进行的。
24.根据权利要求18所述的焊锡点形成方法，其特征在于：
上述第三工序，是边调整上述衬底和上述平板之间的间隙间隔边进行的。
25.根据权利要求18所述的焊锡点形成方法，其特征在于：
上述第一工序，是通过向上述衬底上，供给了含有上述焊锡粉和气泡产生剂的树脂后，在该树脂表面上设置平板的方法进行的。
26.根据权利要求18所述的焊锡点形成方法，其特征在于：
在上述平板的相对于上述衬底的平面上，与形成在上述衬底上的多个电极相对的位置，形成了与上述电极相同形状的凸部。
27.根据权利要求26所述的焊锡点形成方法，其特征在于：
至少上述凸部的表面是用金属形成的。
28.根据权利要求18所述的焊锡点形成方法，其特征在于：
在上述第三工序后，还包括除去上述树脂及上述平板的工序。
29.根据权利要求18所述的焊锡点形成方法，其特征在于：
上述第三工序，包括熔化包含在上述树脂中的上述焊锡粉的表面的工序，
上述第三工序中形成的焊锡点，处于上述焊锡粉相互之间的界面已金属结合的状态。
30.一种倒装芯片封装体，与具有多个连接端子的电路衬底相对设置具有多个电极端子的半导体芯片，电连接上述电路衬底的连接端子和上述半导体芯片的电极端子，其特征在于：
上述连接端子和上述电极端子，通过向上述电路衬底和上述半导体芯片的间隙间供给的含有焊锡粉和气泡产生剂的树脂在上述连接端子和上述电极端子之间自行聚合，且该自行聚合了的上述树脂中的焊锡粉熔化，从而形成在上述连接端子和上述电极端子之间的连接体而被电连接。
31.根据权利要求30所述的倒装芯片封装体，其特征在于：
上述电路衬底，是由具有多个外部端子的衬底中间层构成，上述倒装芯片封装体，成为上述半导体芯片搭载在上述衬底中间层上的CSP或BGA的构成。
32.根据权利要求30所述的倒装芯片封装体，其特征在于：
上述倒装芯片封装体，是由供给在上述电路衬底和上述半导体芯片之间的树脂固定的。
33.一种倒装芯片封装装置，将半导体芯片倒装芯片封装到电路衬底上，其特征在于：
包括：
支撑器，将上述半导体芯片及上述电路衬底，以具有一定的间隙且相互相对的方式支撑，
提供器，向上述半导体芯片和上述电路衬底的间隙里，供给含有焊锡粉和气泡产生剂的树脂，
加热器，加热上述树脂，另外
上述加热器，具有第一加热器和第二加热器，上述第一加热器，控制到使包含在上述树脂中的上述气泡产生剂产生气泡的温度，上述第二加热器，控制到熔化包含在上述树脂中的上述焊锡粉的温度，
由上述第一加热器加热了的上述树脂，通过由上述气泡产生剂产生的气泡的膨胀而被挤向该气泡外，从而使该树脂在上述电路衬底的连接端子和上述半导体芯片的电极端子之间自行聚合。
34.根据权利要求33所述的倒装芯片封装装置，其特征在于：
通过上述第二加热器，使上述连接端子和上述电极端子之间自行聚合了的上述树脂中所含有的焊锡粉熔化，从而在上述连接端子和上述电极端子之间形成连接体。
35.一种焊锡点形成装置，在形成于衬底的多个电极上形成焊锡点，其特征在于：
包括：
支撑器，在相对于上述衬底且具有一定间隙的位置支撑平板，
提供器，向上述衬底和上述平板的间隙里，供给含有焊锡粉和气泡产生剂的树脂，以及
加热器，加热上述树脂，另外
上述加热器，具有第一加热器和第二加热器，上述第一加热器，控制到使包含在上述树脂中的上述气泡产生剂产生气泡的加热温度，上述第二加热器，控制到熔化包含在上述树脂中的上述焊锡粉的加热温度，
由上述第一加热器加热了的上述树脂，通过由上述气泡产生剂产生的气泡的膨胀而被挤向该气泡外，从而使该树脂在上述衬底的电极上自行聚合。
36.根据权利要求35所述的焊锡点形成装置，其特征在于：
通过上述第二加热器，使上述电极上自行聚合了的上述树脂中所含有的焊锡粉熔化，在上述电极上形成焊锡点。
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