CN100505351C - Manufacture method for peeling GaN baseluminescent part by compound separation method method of laser - Google Patents
Manufacture method for peeling GaN baseluminescent part by compound separation method method of laser Download PDFInfo
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- CN100505351C CN100505351C CNB2007101163561A CN200710116356A CN100505351C CN 100505351 C CN100505351 C CN 100505351C CN B2007101163561 A CNB2007101163561 A CN B2007101163561A CN 200710116356 A CN200710116356 A CN 200710116356A CN 100505351 C CN100505351 C CN 100505351C
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000926 separation method Methods 0.000 title claims description 16
- 150000001875 compounds Chemical class 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000013517 stratification Methods 0.000 claims description 4
- 241000931526 Acer campestre Species 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 abstract 2
- 208000033999 Device damage Diseases 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 229910008599 TiW Inorganic materials 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 238000007598 dipping method Methods 0.000 description 1
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- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Abstract
A laser stripping GaN base illuminating device which is disclosed in the invention and is applied with a synthesizing separating method and the manufacturing method adopt the synthesizing separating method for separating each unit GaN base illuminating device, combining the method for eliminating partial GaN base epitaxial layer and laser-gashing the GaN base epitaxial layer with the dry method, the absolute separating between each unit GaN base illuminating devices can be guaranteed, the creation rate of the slit in the laser stripping process is reduced, and the capability of the device can be protected from being damaged in the laser insulating process; an area is preserved between each of unit GaN base illuminating devices as a laser stripping sacrificial area and is insulated from the unit illuminating device to avoid the extending of the fracture and the illuminating device damage generated by the overlapping irradiation of the laser beam in the laser stripping process and increase the finished product rate of the illuminating device after laser stripping; the laser stripping sacrificial area is surrounded by a metal ring and after laser stripping the residue of epitaxial layer in the sacrificial area can be easily removed along with the etching of the metal ring.
Description
Technical field
The present invention relates to a kind of GaN based semiconductor light-emitting device and manufacture method thereof, particularly a kind of manufacture method of laser GaN base peeling based on compound separation method luminescent device.
Background technology
Present most GaN base extension mainly is to be grown on the Sapphire Substrate, because sapphire poor electric conductivity, common GaN base luminescent device adopts transversary, promptly two electrodes are in the same side of device, the electric current distance that lateral flow does not wait in the N-GaN layer, exist electric current to stop up, produce heat; In addition, the heat conductivility of Sapphire Substrate is low, has therefore limited the luminous power and the efficient of GaN base device.
Sapphire removed luminescent device is made vertical stratification can effectively solve heat radiation, bright dipping and problem such as antistatic, at present, that is praised highly surely belongs to laser lift-off Sapphire Substrate (LLO, LaserLift-off) method of adopting.For preventing that the laser lift-off process from causing the generation in extension crack, need before peeling off each unit GaN base luminescent device be separated each other, general way is to form a plurality of independently divided unit GaN base luminescent devices by the mode that certain interval dry etching is removed GaN base epitaxial loayer or adopted laser to scratch the GaN epitaxial loayer now.Yet, such way has that there are the following problems: at first, GaN base epitaxial loayer gross thickness is generally between 4-10 μ m, if remove whole GaN base epitaxial loayers by dry etching merely, then exist etch process to realize shortcomings such as difficulty and poor repeatability, and be difficult to judge whether GaN base epitaxial loayer is removed totally fully, therefore is difficult to the absolute separation of each unit GaN base luminescent device of realization, cause the generation rate in laser lift-off process crack will be very high; Secondly, if adopt laser to scratch the GaN epitaxial loayer to form a plurality of GaN base luminescent devices of separating merely,, can introduce the GaN base luminescent device electricity that causes because of laser and the degeneration of optical property though realize absolute isolation easily; In addition, in laser lift-off Sapphire Substrate process, laser is the mode of taking to scan irradiation, and laser beam overlapping irradiation area is easy to generate the crack, and its luminescent device might be extended and destroy to crack herein and damage.
Summary of the invention
For addressing the above problem, reduce the incidence in laser lift-off process crack and the performance of protection luminescent device, the present invention is intended to propose a kind of manufacture method of laser GaN base peeling based on compound separation method luminescent device.
The present invention addresses the above problem the manufacture method that adopts a kind of laser GaN base peeling based on compound separation method luminescent device, comprises the following steps:
1) growth has the GaN based epitaxial film of N semiconductor layer, active layer and P semiconductor layer structure on Sapphire Substrate;
2) adopt compound separation method to separate each unit GaN base luminescent device, promptly adopt dry etching to press predetermined interval and remove part GaN base epitaxial loayer, on Sapphire Substrate, form a plurality of unit GaN bases luminous zone of two kinds of different sizes, wherein, the large-size zone keeps as luminescent device, the reduced size zone is as the laser lift-off sacrificial region, the sacrificial region size is between 40～200 μ m, the depth of groove that dry ecthing forms is between 0.5～2 μ m, recess width is between 5～20 μ m, successively scratch twice in the laser lift-off sacrificial region side by side with laser by certain interval, isolation laser is peeled off sacrificial region, and separate each unit GaN base luminescent device, optical maser wavelength comprises the laser of 266nm and 355nm wavelength less than the emission wavelength of GaN semi-conducting material; Adopting the topmost purpose of compound separation method is the absolute separation that can guarantee between each unit GaN base luminescent device; reduce the generation rate in laser lift-off process crack; on the other hand; reserved area is as the laser lift-off sacrificial region between each unit GaN base luminescent device; and isolate with the unit luminescent device; purpose is to protect luminescent device fully, promptly avoids in the laser lift-off process, and laser beam overlaps and shines the fracture extension that produces and destroy its luminescent device.
3) form ohmic contact and metallic reflector at P semiconductor layer top, its reflective metals membrane material is selected from Al, Ag, Ni, Au, Cu, Pd, Rh or the formed alloy of aforementioned any metal and makes, and thickness is between 80-300nm; Improve the ohmic contact spy and the adhesive force of metal film and P semiconductor layer by high annealing, so far, the laser lift-off sacrificial region form becket wrap up in around; The effect of this design is that the GaN extension remains in follow-up laser lift-off laser lift-off sacrificial region can be easy to be removed with the etching of becket.
4) deposit passivating film in groove, fill and lead up groove, the passivating film material is SiO
2Or Si
3N
4Insulating material, thickness is between 0.5～2 μ m;
5) deposit multilayer metal film on metallic reflector, the effect of this multiple layer metal layer mainly are the protection reflecting metallic films;
6) by adhesives GaN base extension is connected on the support component, support component has good heat conduction and electric conductivity, and support component is made by the wherein arbitrary material of GaAs, Ge, Si, Cu;
7) by the LLO method Sapphire Substrate is separated with the GaN base luminescent device;
8) by chemical etching the becket of laser lift-off sacrificial region is removed, the nitride semi-conductor material remains of corresponding region are also removed together thereupon;
9) top section GaN semiconductor layer is removed in cleaning and etching, removes the N layer semi-conducting material of groove correspondence position;
10) deposition passivating film, the passivating film material is SiO
2Or Si
3N
4Insulating material, thickness is between 80～500nm;
11) by photoetching the passivating film etching of N electrode position is removed, at the position of passivating film perforate deposition N electrode metal, at support component bottom deposit P electrode metal;
12) last, handle or cut off the process of handling through scribing and form vertical stratification GaN base luminescence chip.
Reflective metals membrane material of the present invention is Ag.
The invention has the beneficial effects as follows: adopt compound separation method to separate each unit GaN base luminescent device, remove the method that part GaN base epitaxial loayer and laser are scratched GaN base epitaxial loayer in conjunction with dry etching, can guarantee the absolute separation between each unit GaN base luminescent device, reduce the generation rate in laser lift-off process crack, performance that again can protection device is not damaged in the laser isolation processes; Reserved area is as the laser lift-off sacrificial region between each unit GaN base luminescent device, and isolate with the unit luminescent device, avoid the fracture extension that the irradiation of laser beam overlapping produces in the laser lift-off process and destroy its luminescent device, the rate of finished products of luminescent device behind the raising laser lift-off; The laser lift-off sacrificial region by a becket wrap up in around, behind the laser lift-off, the epitaxial loayer remains in the sacrificial region can be removed with the etching of becket easily in the lump.
Description of drawings
Fig. 1 a to Figure 11 is the schematic cross-section of the luminescent device manufacture process of the embodiment of the invention;
The schematic cross-section of the luminescent device that Fig. 2 makes for manufacture method of the present invention;
Among the figure:
100: Sapphire Substrate; 111,112: unit GaN base luminous zone;
112a: laser lift-off sacrificial region; 113: groove;
120: metallic reflective coating; 130: passivating film;
140: metal multilayer film; 150: layer of adhesive material;
200: support component; The 160:N electrode;
The 210:P electrode.
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
A kind of manufacture method of laser GaN base peeling based on compound separation method luminescent device, its step is as follows:
The first step: at first, as shown in Figure 1a, heteroepitaxial growth nitride semiconductor epitaxial film 110 on Sapphire Substrate 100, this epitaxial film 110 has N-GaN layer, active layer and P-GaN layer.
Second step: adopt dry etching to remove part GaN base epitaxial loayer earlier by predetermined interval, on the epitaxial film 110 of Sapphire Substrate 100, form a plurality of unit GaN bases luminous zone 111 and 112 of two kinds of different size dimensions, shown in Fig. 1 b, unit GaN base luminous zone 111 width dimensions are more than 300 μ m, unit GaN base luminous zone 112 width dimensions are 40～200 μ m, groove 113 degree of depth that dry ecthing forms are 0.5～2 μ m, and groove 113 width are 5～20 μ m.
The 3rd step: then successively scratch twice side by side in 112 zones, unit GaN base luminous zone by certain interval with laser, complete separating element GaN base luminous zone 111, shown in Fig. 1 c, the optical maser wavelength that adopts is less than the emission wavelength of GaN semi-conducting material, the laser that comprises 266nm and 355nm wavelength, so far finish the application compound separation method and separate each unit GaN base luminescent device 111 fully, the sacrificial region that unit GaN base luminous zone 112 overlaps and shines as laser beam.
Deposit ohmic contact and reflecting metallic film 120 on luminescent device 111 surfaces and on as laser lift-off sacrificial region unit GaN base luminous zone 112, shown in Fig. 1 d, the preferred Ag of its reflecting metallic film 120 materials, thickness is 80～300nm, also can be to comprise Al, Ag, Ni, Au, Cu, Pd, a kind of alloy among Pt and the Rh is made, improve the ohmic contact characteristic and the adhesive force of reflecting metallic film 120 and unit GaN base luminescent device 111 by high annealing, also form becket simultaneously, and when the removal of follow-up 112 regional semiconductor remains, remove in the lump in laser lift-off sacrificial region 112.
The 4th step: deposition passivating film 130 in groove 113, fill and lead up groove 113, form a highly consistent plane, shown in Fig. 1 e, passivation material comprises SiO
2, Si
3N
4Insulating material is between 0.5～2 μ m.
The 5th step: deposit multilayer metal membrane material 140 on the plane that Fig. 1 e forms subsequently; shown in Fig. 1 f; wherein metal multilayer film 140 comprises the metal adhesion layer at least; barrier layer and soakage layer; adhesive layer material can be Ti, Cr, Al etc.; barrier material can be Ni, Pt, TiW (N) etc., and the preferred Au of soakage layer material, this metal multilayer film 140 mainly are the effects of playing protection reflecting metallic film 120.
The 6th step: shown in Fig. 1 g, by adhesives 150 GaN base extension is bonded on the support component 200, support component 200 has good heat conduction and electric conductivity, and support component 200 can be by material preparations such as GaAs, Ge, Si, Cu.
The 7th step: shown in Fig. 1 h, Sapphire Substrate 100 is peeled off, at this moment, produced many crack 112a because of the laser irradiation that overlaps as the nitride layer of the unit GaN of laser sacrificial region base luminous zone 112 by laser-stripping method.
The 8th step: after sapphire is peeled off, by chemical etching the reflectance coating 120 of the deposition in 112 is removed, so the GaN extension remains 112a in the laser sacrificial region also removes thereupon in the lump, shown in Fig. 1 i.
The 9th step: GaN semiconductor unit device 111 is cleaned, and the top section that nitride-based semiconductor exposes is removed, etch away the residual N semi-conducting material of groove location again, shown in Fig. 1 j by etching.
The tenth step: deposition passivating film 130, passivating film 130 materials comprise SiO
2, Si
3N
4Insulating material, thickness are 80～500nm.
The 11 step: by photoetching the passivating film etching of N electrode position is removed, at the position of passivating film perforate deposition N electrode 160 metals, at support component bottom deposit P electrode 210 metals, shown in Fig. 1 k.
The 12 step: last, as shown in figure 11, separate each nitride-based semiconductor unit component 111 through handle or cut off the process of handling as scribing, form vertical stratification GaN luminescence chip, as shown in Figure 2, so far, finish laser lift-off GaN base luminescent device constructed in accordance.
Method of the present invention has outstanding conspicuousness progress at the aspect of performance of incidence that reduces laser lift-off process crack and protection luminescent device.
Claims (2)
1. the manufacture method of a laser GaN base peeling based on compound separation method luminescent device comprises the following steps:
1) growth has the GaN based epitaxial film of N semiconductor layer, active layer and P semiconductor layer structure on Sapphire Substrate;
2) adopt compound separation method to separate each unit GaN base luminescent device, promptly adopt dry etching to press predetermined interval and remove part GaN base epitaxial loayer, on Sapphire Substrate, form a plurality of unit GaN bases luminous zone of two kinds of different sizes, wherein, the large-size zone keeps as luminescent device, the reduced size zone is as the laser lift-off sacrificial region, the sacrificial region size is between 40～200 μ m, the depth of groove that dry ecthing forms is between 0.5～2 μ m, recess width is between 5～20 μ m, successively scratch twice in the laser lift-off sacrificial region side by side with laser by certain interval, isolation laser is peeled off sacrificial region, and separate each unit GaN base luminescent device, optical maser wavelength comprises the laser of 266nm and 355nm wavelength less than the emission wavelength of GaN semi-conducting material;
3) form ohmic contact and metallic reflector at P semiconductor layer top, its reflective metals membrane material is selected from Al, Ag, Ni, Au, Cu, Pd, Rh or the formed alloy of aforementioned any metal and makes, and thickness is between 80-300nm; Improve the ohmic contact characteristic and the adhesive force of metal film and P semiconductor layer by high annealing, so far, the laser lift-off sacrificial region form becket wrap up in around;
4) deposit passivating film in groove, fill and lead up groove, the passivating film material is SiO
2Or Si
3N
4Insulating material, thickness is between 0.5～2 μ m;
5) deposit multilayer metal film on metallic reflector, the effect of this multiple layer metal layer mainly are the protection reflecting metallic films;
6) by adhesives GaN base extension is connected on the support component, support component has good heat conduction and electric conductivity, and support component is made by the wherein arbitrary material of GaAs, Ge, Si, Cu;
7) by the LLO method Sapphire Substrate is separated with the GaN base luminescent device;
8) by chemical etching the becket of laser lift-off sacrificial region is removed, the nitride semi-conductor material remains of corresponding region are also removed together thereupon;
9) top section GaN semiconductor layer is removed in cleaning and etching, removes the N layer semi-conducting material of groove correspondence position;
10) deposition passivating film, the passivating film material is SiO
2Or Si
3N
4Insulating material, thickness is between 80～500nm;
11) by photoetching the passivating film etching of N electrode position is removed, at the position of passivating film perforate deposition N electrode metal, at support component bottom deposit P electrode metal;
12) last, handle or cut off the process of handling through scribing and form vertical stratification GaN base luminescence chip.
2. the manufacture method of a kind of laser GaN base peeling based on compound separation method luminescent device as claimed in claim 1 is characterized in that: the reflective metals membrane material is Ag.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101163561A CN100505351C (en) | 2007-12-24 | 2007-12-24 | Manufacture method for peeling GaN baseluminescent part by compound separation method method of laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101163561A CN100505351C (en) | 2007-12-24 | 2007-12-24 | Manufacture method for peeling GaN baseluminescent part by compound separation method method of laser |
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|---|---|
| CN101241964A CN101241964A (en) | 2008-08-13 |
| CN100505351C true CN100505351C (en) | 2009-06-24 |
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| WO2010111821A1 (en) * | 2009-03-30 | 2010-10-07 | Hong Kong Applied Science And Technology Research Institute Co., Ltd | Host substrate for intride based light emitting devices |
| CN101555627B (en) * | 2009-04-30 | 2012-01-25 | 苏州纳晶光电有限公司 | Laser peeling method of gallium nitride-based epitaxial film |
| CN101859852B (en) * | 2010-05-13 | 2011-09-14 | 厦门市三安光电科技有限公司 | Manufacturing process for improving capacity of aluminum gallium indium phosphorus light-emitting diodes |
| CN102544251B (en) * | 2010-12-27 | 2014-05-07 | 同方光电科技有限公司 | Manufacturing method of large-power vertical light-emitting diode |
| CN102709406B (en) * | 2011-03-28 | 2014-04-16 | 同方光电科技有限公司 | Manufacturing method for copper substrate light emitting diode (LED) with cleavability |
| CN102709405A (en) * | 2011-03-28 | 2012-10-03 | 同方光电科技有限公司 | Manufacturing method for light emitting diode (LED) metal base board |
| CN102570978A (en) * | 2012-02-13 | 2012-07-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Random noise source and manufacturing method thereof |
| CN103943741A (en) * | 2013-01-17 | 2014-07-23 | 易美芯光（北京）科技有限公司 | Semiconductor light emitting device preparation method based on laser stripping |
| CN103618035A (en) * | 2013-11-14 | 2014-03-05 | 南昌黄绿照明有限公司 | GaN-based LED thin-film chip with stress modulation layer and manufacturing method thereof |
| CN104966701A (en) * | 2015-07-14 | 2015-10-07 | 华进半导体封装先导技术研发中心有限公司 | Protective sealing cap used for wafer level packaging and manufacturing method thereof |
| US10468361B2 (en) | 2015-08-27 | 2019-11-05 | Mikro Mesa Technology Co., Ltd. | Method of manufacturing light emitting diodes having a supporting layer attached to temporary adhesive |
| CN110088919B (en) * | 2018-05-04 | 2021-08-31 | 厦门三安光电有限公司 | Light emitting element, light emitting element array and light emitting device |
| CN108878605B (en) * | 2018-05-04 | 2020-01-14 | 厦门三安光电有限公司 | Light emitting element, light emitting element array and light emitting device |
| CN111326463B (en) * | 2018-12-14 | 2023-06-23 | 云谷（固安）科技有限公司 | Laser stripping method for semiconductor device |
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