CN100511046C - Control method of intelligent detecting convert reaction chamber mode - Google Patents
Control method of intelligent detecting convert reaction chamber mode Download PDFInfo
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- CN100511046C CN100511046C CNB2006101169296A CN200610116929A CN100511046C CN 100511046 C CN100511046 C CN 100511046C CN B2006101169296 A CNB2006101169296 A CN B2006101169296A CN 200610116929 A CN200610116929 A CN 200610116929A CN 100511046 C CN100511046 C CN 100511046C
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Abstract
The invention provides a control method of an intelligent detection conversion reaction chamber mode. The invention uses a parameter set inside a detection reaction chamber to self-control the conversion of a clean-base mode and a pollution-base mode and is able to mixedly detect the parameter set executing the clean type and the pollution type modes in the same reaction chamber. The real-time dryclean and adjustment reaction chamber state are carried out through the detection parameter set to further realize the function of prolonging the MTBC, eliminating the First Wafer effect and decreasing the regular PM cost of the process equipment.
Description
Technical field
The present invention relates to a kind of control method that detects the reaction chamber mode in the conversion semiconductor technology, particularly a kind of control method of intelligent detecting convert reaction chamber mode.
Background technology
Semiconductor technology comprises a succession of different chemistry and the technology of physics, with small production of integrated circuits on substrate.Along with the physical dimension of semiconductor subassembly develop more and more littler, keep the homogeneity of critical dimension and the ability of accuracy and just be restricted.Many technologies of carrying out at the semiconductor technology reaction chamber have the inwall of pollutant sediment at reaction chamber, and when it was accumulated to a certain degree, when just having become the manufacturing semiconductor subassembly, very adverse factors was originated.
When reaction chamber carry out be the etch process of semiconductor wafer the time, the macromolecule pollutant of deposition can deposit and and then be accumulated in the inwall, gas distribution plate of semiconductor reaction chamber (gas distribution plate is GDP) and in the inner part.Time one is of a specified duration, if be negligent of the formation that chamber cleaning then can cause secondary and insecure technology and faulty goods, as first wafer (firstwafer) effect.And lack regular and cleaning procedure real-time, and add the certain contamination that can't learn reaction chamber inside, the residual contaminants that is accumulated in reaction chamber wall can be moved on the ground and be polluted.Particularly when the polymer substance generation is peeled off, can make yield rate fatal rate (yield kill rate) surpass 10%.And performance and quality in order to strengthen the manufacturing assembly, the reaction chamber clean method that providing efficient does not have injury is essential.
Therefore, the present invention is directed to above-mentioned problem, propose a kind of control method of intelligent detecting convert reaction chamber mode, to solve the above problems.
Summary of the invention
Fundamental purpose of the present invention is, a kind of control method of intelligent detecting convert reaction chamber mode is provided, and it can mix detection and carry out the parameter setting of clean type and contamination type pattern in same reaction chamber.
Another object of the present invention is to provide a kind of control method of intelligent detecting convert reaction chamber mode, and it can eliminate the influence of first wafer (First Wafer) effect to product.
A further object of the present invention is, a kind of control method of intelligent detecting convert reaction chamber mode is provided, when it can prolong average cleaning apart from (mean time between clean, MTBC).
Another purpose of the present invention is, a kind of control method of intelligent detecting convert reaction chamber mode is provided, and it is compared with wet-cleaning and then reduces process equipment time-based maintenance (preventive maintenance, expense PM).
Another purpose of the present invention is, a kind of control method of intelligent detecting convert reaction chamber mode is provided, and it can effectively alleviate operator's workload burden, and then reduces the cost of human resources.
For reaching above-mentioned purpose, the invention provides a kind of control method of intelligent detecting convert reaction chamber mode.When this reaction chamber mixes detection, carry out the parameter setting of clean type and contamination type pattern; Brilliant boat is scanned comparison, judge that the parameter setting pattern of the brilliant boat of comparison is clean type pattern or contamination type pattern.
The present invention comprises the following steps: to compare detected parameters when carrying out the contamination type pattern, and setting is to carry out the contamination type pattern; Detect and judge that this reaction chamber pattern last time is clean type or contamination type; If clean type pattern, with regard to detection reaction chamber interior parameter setting, and parameter setting is adjusted into the state of suitable work, there is the brilliant boat of wafer to send into this reaction chamber with interior, and begin to carry out the technology that this wafer should carry out, if the contamination type pattern detects this wafer and treats that whether delay-action stand-by period at this reaction chamber is greater than Preset Time; If not, then just will there be the brilliant boat of wafer to send into this reaction chamber in this, and begin to carry out the technology that this wafer should carry out, if, detection reaction chamber interior parameter setting then, and parameter setting is adjusted into the state of suitable work, and just the brilliant boat that wafer is arranged in this is sent into this reaction chamber, carry out the technology that this wafer should carry out.
When semiconductor technology was carried out, whether the present invention can calculate this wafer quantity performed greater than setting value; If not, then directly brilliant boat is carried out, if then this reaction chamber is carried out dry cleaning, and record clean type pattern is a final flowsheet on this brilliant boat, detects the state of adjusting reaction chamber; And at last brilliant boat is carried out.
The present invention comprises the following steps: to compare that detected parameters sets is to carry out the clean type pattern, detects and judges that this reaction chamber pattern last time is clean type or contamination type; If contamination type pattern, then this reaction chamber is carried out dry cleaning, detection reaction chamber interior parameter setting then, and the parameter setting adjustment is best suited for the state of work, then, just will there be the brilliant boat of wafer to send into this reaction chamber in this, carry out the technology that this wafer should carry out, at last brilliant boat is carried out, if the clean type pattern then detects this wafer and treats that whether delay-action stand-by period at this reaction chamber is greater than Preset Time; If not, then will there be the brilliant boat of wafer to send into this reaction chamber in this, and begin to carry out the technology that this wafer should carry out, then, brilliant boat is carried out, if, with regard to detection reaction chamber interior parameter setting, and the parameter setting adjustment is best suited for the state of work, will has the brilliant boat of wafer to send into this reaction chamber in this then, carry out the technology that this wafer should carry out, at last brilliant boat is carried out.
Comprehensively described, the present invention utilizes the parameter setting of detection reaction chamber interior to come self-control transformation clean type and contamination type pattern, and can mix detection and carry out the parameter setting of clean type and contamination type pattern in same reaction chamber, and set executed in real time dry cleaning (dry clean) and adjust reaction chamber state by detected parameters, and then reach in the time of to prolong average cleaning apart from (mean timebetween clean, MTBC), eliminate first wafer (First Wafer) effect, and the time-based maintenance of reduction process equipment (preventive maintenance, the effect of expense PM).
Further specify the present invention below in conjunction with drawings and the specific embodiments.
Description of drawings
Fig. 1 is the main implementing procedure figure of the present invention;
Fig. 2 is the invention process method flow diagram;
Fig. 3 is another implementation method process flow diagram of the present invention.
Embodiment
The present invention is the control method for a kind of intelligent detecting convert reaction chamber mode, when this reaction chamber mixes detection, carry out the parameter setting of clean type and contamination type pattern earlier, consult shown in Figure 1, comprise the following steps: at first shown in step S2, the brilliant boat that can be the brilliant boat of cassette (Cassette) with desire processing is scanned comparison earlier, as step S4, the parameter setting pattern of judging the brilliant boat of comparison is clean type or contamination type pattern, as be the contamination type pattern, then carry out step S6, as be the clean type pattern, then carry out step S8.
And the present invention is when carrying out the contamination type pattern, comprise the following steps: that please consulting Fig. 2 simultaneously shows, at first shown in step S61, the parameter setting of reaction chamber is to carry out the contamination type pattern, next carry out step S62, the present invention can detect and judge that the pattern of reaction chamber last time is clean type or contamination type pattern, and according to the difference of the pattern of its last time, be that different execution in step is arranged, if the pattern of last time is the clean type pattern, when shown in step S64, detection reaction chamber interior parameter setting then, and parameter setting is adjusted into the state of suitable work, carry out then shown in step S65, just will there be the brilliant boat of wafer to send into this reaction chamber in this, and begin to carry out this wafer and should can be the etched technology of polysilicon, and when shown in step S63, the pattern of its last time is the contamination type pattern, then detect this wafer and treat that whether delay-action stand-by period at this reaction chamber is greater than Preset Time, and according to its stand-by period whether greater than Preset Time, be that different execution in step is arranged, if, then the state because of reaction chamber inside may change to some extent, and parameter setting is different, then carries out step S64, carries out step S65 then, if not, then directly carry out step S65.
When semiconductor technology is carried out, shown in step S66, whether the present invention can calculate quantity that this wafer finishes greater than setting value, and whether the quantity of finishing according to this wafer is greater than setting value, be that different execution in step is arranged, if not, because the state of reaction chamber inside still is in the scope of parameter setting, then directly carry out step S69, brilliant boat is carried out, if then, present the state of pollution because the state of reaction chamber inside has surpassed parameter setting, next carry out shown in step S67, this reaction chamber is carried out dry cleaning, and when finishing dry cleaning, and to be recorded as the clean type pattern on brilliant boat be final flow process, carry out step S68 then, detection reaction chamber interior parameter setting, and parameter setting is adjusted into the state of the most suitable work, last completing steps S69.
And the present invention is when carrying out the clean type pattern, be to comprise the following steps: that please consulting Fig. 3 simultaneously shows, at first shown in step S81, the parameter setting of reaction chamber is to carry out the clean type pattern, next carry out step S82, the present invention can detect and judge that the pattern of reaction chamber last time is clean type or contamination type pattern, and according to the difference of the pattern of its last time, is that different execution in step is arranged, the pattern of its last time is the contamination type pattern, then carry out step S83, this reaction chamber is carried out dry cleaning, then, shown in step S85, detection reaction chamber interior parameter setting then, and parameter setting is adjusted into the state of suitable work, carry out then shown in step S86, just will there be the brilliant boat of wafer to send into this reaction chamber in this, and begin to carry out this wafer and should can be the etched technology of polysilicon, last completing steps S87 carries out brilliant boat.If the pattern of last time is the clean type pattern, when shown in step S84, then detect this wafer and treat that whether delay-action stand-by period at this reaction chamber is greater than Preset Time, and according to its stand-by period whether greater than Preset Time, be that different execution in step is arranged, if not, because the state of reaction chamber inside is still in the scope of parameter setting, then directly carry out step S86, just will have the brilliant boat of wafer to send into this reaction chamber in this, and begin to carry out the technology that this wafer should can be the polysilicon etching, completing steps S87 then, if then the state because of reaction chamber inside may change to some extent, and parameter setting is different, then carry out step S85, detection reaction chamber interior parameter setting, and parameter setting is adjusted into the state of the most suitable work, then, shown in step S86, just will there be the brilliant boat of wafer to send into this reaction chamber in this, and begins to carry out this wafer and should can be the polysilicon etch process, then completing steps S87.
Comprehensively described, the control method of intelligent detecting convert reaction chamber mode provided by the invention, it utilizes the parameter setting of detection reaction chamber interior to come self-control transformation clean type and contamination type pattern, and can mix detection and carry out the parameter setting of clean type and contamination type pattern in same reaction chamber, and set executed in real time dry cleaning (dry clean) and adjust reaction chamber state by detected parameters, and then reach in the time of to prolong average cleaning apart from (mean time between clean, MTBC), eliminate first wafer (First Wafer) effect, and the time-based maintenance of reduction process equipment (preventive maintenance, the effect of expense PM).
Above-described only is a preferred embodiment of the present invention; be not to be used for limiting scope of the invention process; therefore all equivalent variations and modifications of being done according to the described shape of the present patent application claim, structure, feature and spirit all should be encompassed in the scope of patent protection of the present invention.
Claims (6)
1, a kind of control method of intelligent detecting convert reaction chamber mode is applied to detect the reaction chamber mode in the conversion semiconductor technology, it is characterized in that: when this reaction chamber mixes detection, carry out the parameter setting of clean type and contamination type pattern; Brilliant boat is scanned comparison, judge that the parameter setting pattern of the brilliant boat of comparison is clean type pattern or contamination type pattern;
Comprise the following steps: during for execution contamination type pattern
A, detected parameters are set at the contamination type pattern of carrying out;
B, judge that last time, pattern was clean type or contamination type, if the clean type pattern, execution in step D then is if the contamination type pattern is then carried out next step;
C, detect wafer in the brilliant boat and whether treat delay-action stand-by period at this reaction chamber greater than Preset Time, if not, execution in step E then is if then carry out next step;
The state of reaction chamber is adjusted in D, detection;
E, carry out the technology that this wafer should carry out;
F, whether calculate this wafer quantity performed greater than setting value, if not, execution in step I then is if then carry out next step;
G, execution dry cleaning are in this reaction chamber, and record clean type pattern is a final flowsheet on this crystalline substance boat;
The state of reaction chamber is adjusted in H, detection; And
I, brilliant boat carry out.
2, the control method of intelligent detecting convert reaction chamber mode as claimed in claim 1 is characterized in that: this crystalline substance boat is the brilliant boat of cassette.
3, the control method of intelligent detecting convert reaction chamber mode as claimed in claim 1 is characterized in that: the technology in the described step e is the polysilicon etch process.
4, a kind of control method of intelligent detecting convert reaction chamber mode is applied to detect the reaction chamber mode in the conversion semiconductor technology, it is characterized in that: when this reaction chamber mixes detection, carry out the parameter setting of clean type and contamination type pattern; Brilliant boat is scanned comparison, judge that the parameter setting pattern of the brilliant boat of comparison is clean type pattern or contamination type pattern;
Comprise the following steps: during for execution clean type pattern
A, detected parameters are set at the clean type pattern of carrying out;
B, judge that last time, pattern was clean type or contamination type, if the clean type pattern, execution in step D then is if the contamination type pattern is then carried out next step;
C, execution dry cleaning are in this reaction chamber;
D, detect wafer in the brilliant boat and whether treat delay-action stand-by period at this reaction chamber greater than Preset Time, if not, execution in step f then is if then carry out next step;
The state of reaction chamber is adjusted in e, detection;
F, carry out the technology that this wafer should carry out; And
G, brilliant boat carry out.
5, the control method of intelligent detecting convert reaction chamber mode as claimed in claim 4 is characterized in that: this crystalline substance boat is the brilliant boat of cassette.
6, the control method of intelligent detecting convert reaction chamber mode as claimed in claim 4 is characterized in that: the technology among the described step f is the polysilicon etch process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101169296A CN100511046C (en) | 2006-10-08 | 2006-10-08 | Control method of intelligent detecting convert reaction chamber mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101169296A CN100511046C (en) | 2006-10-08 | 2006-10-08 | Control method of intelligent detecting convert reaction chamber mode |
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| Publication Number | Publication Date |
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| CN101158848A CN101158848A (en) | 2008-04-09 |
| CN100511046C true CN100511046C (en) | 2009-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006101169296A Expired - Fee Related CN100511046C (en) | 2006-10-08 | 2006-10-08 | Control method of intelligent detecting convert reaction chamber mode |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847389B (en) * | 2018-06-13 | 2020-08-25 | 上海华力微电子有限公司 | Method for improving first wafer effect in plasma etching process |
| CN111118458B (en) * | 2019-12-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Chamber cleaning method and apparatus |
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Granted publication date: 20090708 Termination date: 20111008 |