CN100512591C - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
- Publication number
- CN100512591C CN100512591C CNB200510130190XA CN200510130190A CN100512591C CN 100512591 C CN100512591 C CN 100512591C CN B200510130190X A CNB200510130190X A CN B200510130190XA CN 200510130190 A CN200510130190 A CN 200510130190A CN 100512591 C CN100512591 C CN 100512591C
- Authority
- CN
- China
- Prior art keywords
- cold
- producing medium
- coolant channel
- shower head
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Abstract
A plasma processing apparatus for generating plasma in a chamber maintained in a vacuum state and processing a substrate using the plasma. The plasma processing apparatus includes a refrigerant channel for circulating a refrigerant formed in a shower head, thereby easily controlling the temperature of the shower head and improving the reproducibility of plasma treatment.
Description
Technical field
The present invention relates to a kind of apparatus for processing plasma that in being maintained at the chamber of vacuum state, produces plasma and use described plasma treatment substrate.
Background technology
Use the apparatus for processing plasma of plasma treatment substrate surface, be widely used in making among the technology of semiconductor device and liquid crystal indicator.Apparatus for processing plasma comprises the etched plasma etching equipment and the CVD equipment that is used to carry out the plasma chemical vapor deposition (CVD) to substrate that is used to carry out to substrate.
As shown in Figure 1, apparatus for processing plasma 1 comprises two plate-shaped electrodes 10 and 20 that be arranged in parallel and make that it faces with each other.Substrate S is installed on the bottom electrode 20.Therefore, bottom electrode 20 can be called as " substrate holder ".
In addition, the Promotion From Within pin 30 and the outside lifting arm (not shown) that are used to help substrate S is transported into and goes out apparatus for processing plasma 1 in apparatus for processing plasma 1, are provided, as shown in Figure 1.Promotion From Within pin 30 is set in the through hole 22 that the edge by bottom electrode 20 forms, and in through hole 22 vertical moving.
Outside lifting arm provides in the outside of bottom electrode 20.Be that outside lifting arm is set between the sidewall of the sidewall of bottom electrode 20 and apparatus for processing plasma 1 in the formed space, and vertical moving.
Being used for that internal gas is discharged to outside deliverying unit 40 forms by apparatus for processing plasma.Deliverying unit 40 removes gas in the apparatus for processing plasma 1 by suction, and uses the pump (not shown) that provides in the outside of apparatus for processing plasma 1 to keep the vacuum state of apparatus for processing plasma 1.
Top electrode 10 is set at the position in the face of bottom electrode 20.Top electrode 10 is as the process gas feeding unit, is used for process gas is fed to space and electrode between upper and lower electrode 10 and 20.Correspondingly, as shown in Figure 1, shower head 12 is connected to the bottom of top electrode 10.Shower head 12 has a plurality of process gas diffusion holes 14 with thin diameter.Shower head 12 is fed to space between upper and lower electrode 10 and 20 equably with process gas.The process gas that is fed to the space between upper and lower electrode 10 and 20 is transformed into plasma by the high frequency power that is applied to upper and lower electrode 10 and 20, and the surface of described plasma treatment substrate S.
The coolant channel 16 that is used for making cold-producing medium pass through its circulation forms at top electrode 10.Coolant channel 16 passes through top electrode 10 in the horizontal direction, and is arranged to spread all over the All Ranges of top electrode 10 equably.One end of coolant channel 16 is connected to the cold-producing medium supply pipe 17 with exterior, and the other end of coolant channel 16 is connected to cold-producing medium collecting pipe 18.Correspondingly, coolant channel 16 receives new cold-producing medium and useless cold-producing medium is turned back to cold-producing medium collecting pipe 18 from cold-producing medium supply pipe 17, thereby makes refrigerant cycle.Coolant channel 16 is used for preventing being subjected to the influence that the temperature of the shower head 12 that causes owing to plasma generation raises by apparatus for processing plasma 1 performed technology.
Because conventional apparatus for processing plasma 1 has the coolant channel 16 that does not directly form but form in top electrode 10 in shower head 12, make shower head 12 be cooled indirectly, is not easy to control the temperature of shower head 12.When the temperature of shower head 12 difficulty owing to the temperature of control shower head 12 raises, the high frequency power efficiency of transmission reduces also influences etch-rate or etch uniformity, thereby has damaged the reproducibility of plasma treatment.
Summary of the invention
Therefore, the present invention produces in view of above problem, and the purpose of this invention is to provide a kind of plasma processing apparatus, and wherein the temperature of shower head is directly regulated, thereby improves the reproducibility of plasma treatment.
Another object of the present invention provides plasma processing apparatus, and it is included in the heat delivery unit of installing between shower head and the top electrode, thereby easily regulates the temperature of shower head.
According to an aspect of the present invention, the above-mentioned purpose with other can realize by a kind of apparatus for processing plasma is provided, described apparatus for processing plasma is used at the indoor generation plasma that is maintained at vacuum state and uses described plasma treatment substrate, comprise: upper and lower electrode, be provided at the top and lower part of chamber respectively, be used for high frequency power is applied to the chamber; Shower head is connected to the lower part of top electrode, is used for process gas is diffused into the chamber; Coolant channel by shower head, is used to pass through cold-producing medium in the horizontal direction; And the refrigerant cycle unit, be connected to the two ends of coolant channel, be used for cold-producing medium is fed to an end of coolant channel and collects cold-producing medium so that make refrigerant cycle from the other end of coolant channel.
According to a further aspect in the invention, provide a kind of apparatus for processing plasma, described apparatus for processing plasma is used at the indoor generation plasma that is maintained at vacuum state and uses described plasma treatment substrate, comprise: upper and lower electrode, be provided at the top and lower part of chamber respectively, be used for high frequency power is applied to the chamber; Shower head is connected to the outstanding marginal portion of lower surface of the utmost point from power on downwards, is used for process gas is diffused into the chamber; Coolant channel in the horizontal direction by top electrode, is used for by the cold-producing medium from the outside supply; Heat delivery unit, the upper surface of contact shower head and the lower surface of top electrode are used for top electrode is arrived in the heat transfer of shower head; And the refrigerant cycle unit, be connected to the two ends of coolant channel, be used for cold-producing medium is fed to an end of coolant channel and collects cold-producing medium from the other end of coolant channel.
Description of drawings
Above-mentioned purpose, feature and other advantage with other of the present invention will be closed the following detailed description that provides and more clearly understood from giving with accompanying drawing, wherein:
Fig. 1 is the sectional view of conventional apparatus for processing plasma;
Fig. 2 is the sectional view according to the apparatus for processing plasma of the first embodiment of the present invention;
Fig. 3 is the perspective view according to the shower head of the apparatus for processing plasma of the first embodiment of the present invention;
Fig. 4 is the sectional view of apparatus for processing plasma according to a second embodiment of the present invention;
Fig. 5 is the perspective view of the heat delivery unit of apparatus for processing plasma according to a second embodiment of the present invention;
Fig. 6 is the perspective view of another heat delivery unit of apparatus for processing plasma according to a second embodiment of the present invention; And
Fig. 7 is the perspective view of the another heat delivery unit of apparatus for processing plasma according to a second embodiment of the present invention.
Embodiment
Now, with preferred embodiments of the present invention will be described in detail with reference to the annexed drawings.
＜the first embodiment 〉
As shown in Figure 2, apparatus for processing plasma 100 according to the first embodiment of the present invention comprises top electrode 110, bottom electrode 120, shower head 150, Promotion From Within pin 130, outside lifting arm 140, process gas feeding unit (not shown) and deliverying unit (not shown), and these are installed in the chamber that is maintained at vacuum state.Here, the 26S Proteasome Structure and Function and the conventional apparatus for processing plasma of the bottom electrode 120 of the apparatus for processing plasma 100 of this embodiment, Promotion From Within pin 130, outside lifting arm 140, process gas feeding unit and deliverying unit are basic identical, and it is described in detail and will therefore omit, because this is considered to unnecessary.
The top electrode 110 of the apparatus for processing plasma 100 of this embodiment is different with conventional apparatus for processing plasma with the 26S Proteasome Structure and Function of shower head 150, and its detailed description is carried out in detail with following.
Different with the top electrode 10 of conventional apparatus for processing plasma 1, the top electrode 110 of the apparatus for processing plasma 100 of this embodiment does not have by its formed coolant channel.Correspondingly, top electrode 110 has simple structure and makes easily.
The two ends of coolant channel 152 all are connected to refrigerant cycle unit 160, so that refrigerant cycle unit 160 is fed to cold-producing medium coolant channel 152 and collects cold-producing medium so that refrigerant cycle from coolant channel 152 then.In this embodiment, refrigerant cycle unit 160 comprises cold-producing medium supply pipe 162, cold-producing medium collecting pipe 164 and refrigerant cycle pump 166.
Cold-producing medium supply pipe 162 is by the chamber, and an end of connection coolant channel 152.Cold-producing medium supply pipe 162 is used for the new refrigerant from the outside is fed to coolant channel 152.
Identical with cold-producing medium supply pipe 162, cold-producing medium collecting pipe 164 is by the chamber, and the other end of connection coolant channel.Cold-producing medium collecting pipe 164 is used for collecting and is discharged into outside useless cold-producing medium from coolant channel 152.
In this embodiment, end cap 168 be used to interconnect refrigerant cycle pump 166 and cold-producing medium supply and recovery tube 162 and 164.The refrigerant cycle pump 166 that end cap 168 promotes with preparation is separated in the chamber is connected to the cold-producing medium supply pipe 162 that is fixed to the chamber and is connected with cold-producing medium collecting pipe 164 and from its disconnection.For maintenance and repair apparatus for processing plasma 100, the upper wall of the chamber of apparatus for processing plasma 100 is opened.When the upper wall of chamber is opened, be necessary earlier refrigerant cycle pump 166 to be separated with cold-producing medium collecting pipe 164 from cold-producing medium supply pipe 162.Correspondingly, because refrigerant cycle pump 166 is easy to be connected to cold-producing medium supply pipe 162 and cold-producing medium collecting pipe 164 and disconnects from it, the apparatus for processing plasma 100 of this embodiment is favourable, because its maintenance and repair are easy.
As shown in Figure 2, in this embodiment, cold-producing medium supply pipe 162 and cold-producing medium collecting pipe 164 are projected into the outside by the upper wall of chamber.This structure also is convenient to the maintenance and repair of apparatus for processing plasma 100.Promptly, when cold-producing medium supply pipe 162 and cold-producing medium collecting pipe 164 sidewall by the chamber is projected into the outside, increase and cold-producing medium supply pipe 162 and cold-producing medium collecting pipe 164 can hinder the maintenance and repair of apparatus for processing plasma 100 by apparatus for processing plasma 100 occupation space.
As mentioned above, the shower head 150 of the apparatus for processing plasma 100 of this embodiment has the shower big thickness on first watch than conventional apparatus for processing plasma.Therefore, shower head 150 weight increase.In order to alleviate the weight of shower head 150, at the upper surface formation groove 154 of shower head.That is, as shown in Figure 3, described groove 154 longitudinal extensions are engraved in the upper surface of shower head 150 position away from coolant channel 152.The process gas diffusion hole 156 that is used for diffusion process gas forms along groove 154 by shower head 150 at thickness direction.When groove formed in shower head 150, shower head 150 weight reduced, thereby have reduced the load that is applied to apparatus for processing plasma 100.In addition, by the process gas smooth flow of process gas diffusion hole 156 diffusions, thereby diffusion equably.
＜the second embodiment 〉
As shown in Figure 4, apparatus for processing plasma 200 according to a second embodiment of the present invention comprises top electrode 210, bottom electrode 220, shower head 250, heat delivery unit 260, refrigerant cycle unit 270, Promotion From Within pin 230, outside lifting arm (not shown), process gas feeding unit (not shown) and deliverying unit 240, and these are installed in the chamber that is maintained at vacuum state.Here, the 26S Proteasome Structure and Function and the conventional apparatus for processing plasma of the top electrode 210 of the apparatus for processing plasma 200 of this embodiment, bottom electrode 220, Promotion From Within pin 230, outside lifting arm, process gas feeding unit and deliverying unit 240 are basic identical, and it is described in detail and will therefore omit, because this is considered to unnecessary.
The 26S Proteasome Structure and Function of the shower head 250 of the apparatus for processing plasma 200 of this embodiment, heat delivery unit 260 and refrigerant cycle unit 270 is different with conventional apparatus for processing plasma, and its detailed description is carried out in detail with following.
Preferably, the heat delivery unit 260 of the apparatus for processing plasma 200 of this embodiment is made by the metal with good thermal conductivity rate.
As shown in Figure 5, heat delivery unit 260 can comprise by appointed interval a plurality of heat transfer pins 262 separated from one another.Heat transfer pin 262 is provided with equably, spreads all over the whole zone of shower head 250.
In addition, shown in Fig. 6 and 7, heat delivery unit 260 can comprise a plurality of heat transfer plates 264 or a heat transfer lattice 266.Preferably, heat transfer plate 264 or heat transfer lattice 266 evenly are provided with, and the whole zone that spreads all over shower head 260 is so that the temperature in the whole zone of even regulation shower head 250.
When heat delivery unit 260 comprises heat transfer plate 264 or heat transfer lattice 266, be used for preferably forming, thereby allow the process gas smooth flow by heat transfer plate 264 or heat transfer lattice 266 by the hole 268 of process gas.Shown in Fig. 6 and 7, a plurality of holes 268 at thickness direction by heat transfer plate 264 or heat transfer lattice 266.
The two ends of coolant channel 212 all are connected to refrigerant cycle unit 270, so that refrigerant cycle unit 270 is fed to cold-producing medium coolant channel 212 and collects cold-producing medium so that refrigerant cycle from coolant channel 212 then.In this embodiment, refrigerant cycle unit 270 comprises cold-producing medium supply pipe 272, cold-producing medium collecting pipe 274 and refrigerant cycle pump 276.
Cold-producing medium supply pipe 272 is by locular wall, and an end of connection coolant channel 212.Cold-producing medium supply pipe 272 is used for the new refrigerant from the outside is fed to coolant channel 212.
Identical with cold-producing medium supply pipe 272, cold-producing medium collecting pipe 274 passes through locular wall, and is connected to the other end of coolant channel 212.Cold-producing medium collecting pipe 274 is used for collecting and is discharged into outside useless cold-producing medium from coolant channel 212.
In this embodiment, end cap 278 be used to interconnect refrigerant cycle pump 276 and cold-producing medium supply and recovery tube 272 and 274.The refrigerant cycle pump 276 that end cap 278 promotes with preparation is separated in the chamber is connected to the cold-producing medium supply pipe 272 that is fixed to the chamber and is connected with cold-producing medium collecting pipe 274 and from its disconnection.For maintenance and repair apparatus for processing plasma 200, the upper wall of the chamber of apparatus for processing plasma 200 is opened.When the upper wall of chamber is opened, be necessary earlier refrigerant cycle pump 276 to be separated with cold-producing medium collecting pipe 274 with cold-producing medium supply pipe 272.Correspondingly, because refrigerant cycle pump 276 easily is connected to cold-producing medium supply pipe 272 and is connected with cold-producing medium collecting pipe 274 and from its disconnection, the apparatus for processing plasma 200 of this embodiment is favourable, because its maintenance and repair are easy.
As shown in Figure 4, in this embodiment, cold-producing medium supply pipe 272 and cold-producing medium collecting pipe 274 are projected into the outside by the upper wall of chamber.This structure also is easy to the maintenance and repair of apparatus for processing plasma 200.Promptly, when cold-producing medium supply pipe 272 and cold-producing medium collecting pipe 274 sidewall by the chamber is projected into the outside, the spaces shared by apparatus for processing plasma 200 increase, and cold-producing medium supply pipe 272 and cold-producing medium collecting pipe 274 can hinder the maintenance and repair of apparatus for processing plasma 200.
From the above description and obviously, the invention provides apparatus for processing plasma with following several effects.
At first, because apparatus for processing plasma of the present invention is included in the coolant channel that forms in the shower head, makes described shower head to be cooled, thereby improved the reproducibility of plasma treatment.
Secondly, apparatus for processing plasma of the present invention is included in a plurality of grooves that form in the upper surface of shower head, thereby reduced because the thickness of the shower head that formation caused of coolant channel and the caused load of increase of weight in the shower head, promote the smooth flow of process gas so that improve cooling effectiveness, and make the distribution of temperature become even.
The 3rd, apparatus for processing plasma of the present invention further is included in the heat delivery unit that forms between shower head and the top electrode, make top electrode contact shower head by refrigerant cools, thus the temperature that makes the thermal capacitance of shower head change places and be transferred to top electrode and easily regulate shower head.
Although the preferred embodiments of the present invention are open for illustrative purposes, it will be apparent to one skilled in the art that under the situation that does not deviate from scope and spirit of the present invention disclosed in the accompanying claims and can carry out various modifications, interpolation and replacement.
Claims (4)
1. an apparatus for processing plasma is used for producing plasma and using described plasma treatment substrate in the chamber that is maintained at vacuum state, comprising:
Upper and lower electrode provides with lower part on described chamber respectively, is used for high frequency power is applied to described chamber;
Shower head is connected to the lower part of described top electrode, is used for process gas is diffused into described chamber;
Coolant channel by described shower head, is used to by cold-producing medium path is provided in the horizontal direction; And
The refrigerant cycle unit is connected to the two ends of described coolant channel, is used for described cold-producing medium is fed to an end of described coolant channel and collects described cold-producing medium so that described refrigerant cycle from the other end of described coolant channel,
Wherein a plurality of grooves are engraved in the position that described coolant channel is not set in the upper surface of described shower head.
2. apparatus for processing plasma as claimed in claim 1 wherein is used for forming by described shower head at thickness direction along described groove by a plurality of holes of process gas.
3. apparatus for processing plasma as claimed in claim 2, wherein said refrigerant cycle unit comprises:
The cold-producing medium supply pipe is connected to an end and the outside of described coolant channel, is used for new refrigerant is fed to described coolant channel;
The cold-producing medium collecting pipe is connected to the other end and the described outside of described coolant channel, and useless cold-producing medium from described coolant channel is used to collect; And
The refrigerant cycle pump is connected to described cold-producing medium supply pipe and described cold-producing medium collecting pipe, is used to make refrigerant cycle,
Wherein said cold-producing medium supply pipe and described cold-producing medium collecting pipe by described chamber upper wall and be connected to described outside.
4. apparatus for processing plasma as claimed in claim 3, wherein said refrigerant cycle pump is connected to described cold-producing medium supply pipe and described cold-producing medium collecting pipe by end cap.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040111019 | 2004-12-23 | ||
| KR1020040110832 | 2004-12-23 | ||
| KR1020040110832A KR100661744B1 (en) | 2004-12-23 | 2004-12-23 | Apparatus for processing substrate with plasma |
| KR1020040110937 | 2004-12-23 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101725493A Division CN101448357B (en) | 2004-12-23 | 2005-12-19 | Plasma processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1802066A CN1802066A (en) | 2006-07-12 |
| CN100512591C true CN100512591C (en) | 2009-07-08 |
Family
ID=36811739
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510130190XA Expired - Fee Related CN100512591C (en) | 2004-12-23 | 2005-12-19 | Plasma processing apparatus |
| CN2008101725493A Expired - Fee Related CN101448357B (en) | 2004-12-23 | 2005-12-19 | Plasma processing apparatus |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101725493A Expired - Fee Related CN101448357B (en) | 2004-12-23 | 2005-12-19 | Plasma processing apparatus |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100661744B1 (en) |
| CN (2) | CN100512591C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701121B (en) * | 2013-12-04 | 2017-01-04 | 中微半导体设备(上海)有限公司 | It is provided with pump and the plasma treatment appts that can improve symmetric gas operated device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200913798A (en) | 2007-09-14 | 2009-03-16 | Advanced Display Proc Eng Co | Substrate processing apparatus having electrode member |
| KR100970201B1 (en) * | 2008-03-17 | 2010-07-14 | 주식회사 아이피에스 | Vacuum Processing Apparatus |
| TWI830183B (en) | 2011-10-05 | 2024-01-21 | 美商應用材料股份有限公司 | Plasma processing apparatus comprising symmetric plasma process chamber and lid assembly for the same |
| CN106783500A (en) * | 2017-01-03 | 2017-05-31 | 京东方科技集团股份有限公司 | Filming equipment |
| US10900124B2 (en) * | 2018-06-12 | 2021-01-26 | Lam Research Corporation | Substrate processing chamber with showerhead having cooled faceplate |
| CN109600898B (en) * | 2018-12-13 | 2020-04-17 | 大连理工大学 | Spray type electrode and discharge system |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4534816A (en) * | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
| JP3242166B2 (en) | 1992-11-19 | 2001-12-25 | 株式会社日立製作所 | Etching equipment |
| KR100471728B1 (en) * | 1996-04-12 | 2005-03-14 | 가부시끼가이샤 히다치 세이사꾸쇼 | Plasma treatment device |
| US5846883A (en) * | 1996-07-10 | 1998-12-08 | Cvc, Inc. | Method for multi-zone high-density inductively-coupled plasma generation |
| US5950925A (en) * | 1996-10-11 | 1999-09-14 | Ebara Corporation | Reactant gas ejector head |
| US6079356A (en) | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
| TW573053B (en) * | 2001-09-10 | 2004-01-21 | Anelva Corp | Surface processing apparatus |
| JP4129855B2 (en) | 2001-12-13 | 2008-08-06 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP4493932B2 (en) | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | Upper electrode and plasma processing apparatus |
-
2004
- 2004-12-23 KR KR1020040110832A patent/KR100661744B1/en not_active IP Right Cessation
-
2005
- 2005-12-19 CN CNB200510130190XA patent/CN100512591C/en not_active Expired - Fee Related
- 2005-12-19 CN CN2008101725493A patent/CN101448357B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701121B (en) * | 2013-12-04 | 2017-01-04 | 中微半导体设备(上海)有限公司 | It is provided with pump and the plasma treatment appts that can improve symmetric gas operated device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060072276A (en) | 2006-06-28 |
| CN101448357B (en) | 2012-07-04 |
| CN1802066A (en) | 2006-07-12 |
| CN101448357A (en) | 2009-06-03 |
| KR100661744B1 (en) | 2006-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7886687B2 (en) | Plasma processing apparatus | |
| CN100512591C (en) | Plasma processing apparatus | |
| CN101834120B (en) | Shower head and plasma processing apparatus | |
| KR100676203B1 (en) | Cooling apparatus of electrostatic chuck for semiconductor equipment | |
| KR100253134B1 (en) | Substrate process apparatus | |
| CN1904131B (en) | Controllable target cooling | |
| US8910591B2 (en) | Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers | |
| US8279577B2 (en) | Substrate support having fluid channel | |
| JP3921234B2 (en) | Surface treatment apparatus and manufacturing method thereof | |
| US7221553B2 (en) | Substrate support having heat transfer system | |
| CN102959125B (en) | Vacuum processing apparatus and plasma processing method | |
| CN100431097C (en) | Top electrode, plasma processing device and method | |
| CN100495655C (en) | Gas treatment device and heat readiting method | |
| CN101314847A (en) | Plasma cvd apparatus having non-metal susceptor | |
| TW201921580A (en) | Substrate support with cooled and conducting pins | |
| US20060037702A1 (en) | Plasma processing apparatus | |
| WO2008028352A1 (en) | An apparatus of controlling temperature and a method of controlling the temperature of wafer | |
| CN102412176B (en) | Pallet and wafer processing equipment possessing the same | |
| CN113604786A (en) | Heater of semiconductor device and semiconductor device | |
| JPH07201956A (en) | Wafer cooling apparatus | |
| CN101389178A (en) | Substrate processing apparatus having electrode member | |
| KR100661740B1 (en) | Apparatus for processing substrate with plasma | |
| JP2002009049A (en) | Plasma processing method and plasma processor using the same | |
| CN109075109B (en) | Full area counter flow heat exchange substrate support | |
| CN114517329B (en) | Wafer cooling device and electroplating equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090708 Termination date: 20151219 |
|
| EXPY | Termination of patent right or utility model |