CN100524518C - 具有提高的读稳定性的存储单元、存储器阵列及集成电路 - Google Patents
具有提高的读稳定性的存储单元、存储器阵列及集成电路 Download PDFInfo
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- CN100524518C CN100524518C CNB200510123501XA CN200510123501A CN100524518C CN 100524518 C CN100524518 C CN 100524518C CN B200510123501X A CNB200510123501X A CN B200510123501XA CN 200510123501 A CN200510123501 A CN 200510123501A CN 100524518 C CN100524518 C CN 100524518C
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- China
- Prior art keywords
- storage unit
- mentioned
- write
- memory element
- circuit
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64058704P | 2004-12-30 | 2004-12-30 | |
US60/640,587 | 2004-12-30 | ||
US11/069,018 | 2005-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1808621A CN1808621A (zh) | 2006-07-26 |
CN100524518C true CN100524518C (zh) | 2009-08-05 |
Family
ID=36840451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200510123501XA Active CN100524518C (zh) | 2004-12-30 | 2005-11-17 | 具有提高的读稳定性的存储单元、存储器阵列及集成电路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7106620B2 (zh) |
CN (1) | CN100524518C (zh) |
TW (1) | TWI420536B (zh) |
Families Citing this family (61)
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US7706174B2 (en) * | 2008-05-15 | 2010-04-27 | The University Of Bristol | Static random access memory |
US7826251B2 (en) * | 2008-05-22 | 2010-11-02 | International Business Machines Corporation | High performance metal gate polygate 8 transistor SRAM cell with reduced variability |
US7940560B2 (en) * | 2008-05-29 | 2011-05-10 | Advanced Micro Devices, Inc. | Memory cells, memory devices and integrated circuits incorporating the same |
US7883941B2 (en) * | 2008-05-29 | 2011-02-08 | Globalfoundries Inc. | Methods for fabricating memory cells and memory devices incorporating the same |
US7864600B2 (en) * | 2008-06-19 | 2011-01-04 | Texas Instruments Incorporated | Memory cell employing reduced voltage |
SG10201608214SA (en) | 2008-07-16 | 2016-11-29 | Tela Innovations Inc | Methods for cell phasing and placement in dynamic array architecture and implementation of the same |
US9122832B2 (en) | 2008-08-01 | 2015-09-01 | Tela Innovations, Inc. | Methods for controlling microloading variation in semiconductor wafer layout and fabrication |
JP4954954B2 (ja) * | 2008-08-07 | 2012-06-20 | パナソニック株式会社 | 半導体記憶装置 |
TWI381380B (zh) * | 2008-09-18 | 2013-01-01 | Aicestar Technology Suzhou Corp | 靜態隨機存取記憶體及其形成與控制方法 |
US7969759B1 (en) * | 2008-12-19 | 2011-06-28 | Suvolta, Inc. | Method and apparatus for improving SRAM write operations |
US7961499B2 (en) * | 2009-01-22 | 2011-06-14 | Qualcomm Incorporated | Low leakage high performance static random access memory cell using dual-technology transistors |
US8138541B2 (en) * | 2009-07-02 | 2012-03-20 | Micron Technology, Inc. | Memory cells |
US8339876B2 (en) * | 2009-10-08 | 2012-12-25 | Arm Limited | Memory with improved read stability |
US8661392B2 (en) | 2009-10-13 | 2014-02-25 | Tela Innovations, Inc. | Methods for cell boundary encroachment and layouts implementing the Same |
US8325510B2 (en) | 2010-02-12 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Weak bit compensation for static random access memory |
US8296698B2 (en) * | 2010-02-25 | 2012-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-speed SRAM |
US9858986B2 (en) * | 2010-08-02 | 2018-01-02 | Texas Instruments Incorporated | Integrated circuit with low power SRAM |
EP2439744B1 (en) * | 2010-09-13 | 2013-12-04 | Katholieke Universiteit Leuven, K.U. Leuven R&D | Variability resilient sense amplifier with reduced energy consumption |
US8385136B2 (en) | 2010-10-27 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuit and method of operating the same |
US9159627B2 (en) | 2010-11-12 | 2015-10-13 | Tela Innovations, Inc. | Methods for linewidth modification and apparatus implementing the same |
US8773940B2 (en) * | 2012-01-17 | 2014-07-08 | Freescale Semiconductor, Inc. | Skewed SRAM cell |
US8514007B1 (en) | 2012-01-27 | 2013-08-20 | Freescale Semiconductor, Inc. | Adjustable power splitter and corresponding methods and apparatus |
US9171634B2 (en) * | 2013-03-14 | 2015-10-27 | Arm Limited | Memory device and method of controlling leakage current within such a memory device |
US9460777B2 (en) * | 2013-08-02 | 2016-10-04 | Qualcomm Incorporated | SRAM read buffer with reduced sensing delay and improved sensing margin |
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US10026456B2 (en) * | 2015-02-23 | 2018-07-17 | Qualcomm Incorporated | Bitline positive boost write-assist circuits for memory bit cells employing a P-type Field-Effect transistor (PFET) write port(s), and related systems and methods |
RU2580071C1 (ru) * | 2015-04-07 | 2016-04-10 | Федеральное государственное учреждение "Федеральный научный центр Научно-исследовательский институт системных исследований Российской академии наук"(ФГУ ФНЦ НИИСИ РАН) | Ячейка памяти комплементарной металл-оксид-полупроводниковой структуры озу |
CN114898791A (zh) | 2016-01-29 | 2022-08-12 | 三星电子株式会社 | 用于选择性地执行隔离功能的半导体器件及其布局替代方法 |
CN107039070B (zh) | 2016-01-29 | 2022-06-14 | 三星电子株式会社 | 用于选择性地执行隔离功能的半导体器件及其布局替代方法 |
US10140224B2 (en) | 2016-10-20 | 2018-11-27 | Qualcomm Incorporated | Noise immune data path scheme for multi-bank memory architecture |
US10515969B2 (en) | 2016-11-17 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10748911B2 (en) | 2017-11-13 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit for low power SRAM |
CN110364193A (zh) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(天津)有限公司 | 静态随机存取存储单元、静态随机存取存储器及电子装置 |
CN109524035B (zh) * | 2018-10-10 | 2020-06-09 | 中国科学院上海微系统与信息技术研究所 | 存储单元、嵌入式存储器及其读写方法 |
CN109684665B (zh) * | 2018-11-21 | 2024-02-02 | 浙江大学城市学院 | 基于FinFET的三值SRAM单元电路及控制方法 |
US11183234B2 (en) * | 2019-11-25 | 2021-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bitcell supporting bit-write-mask function |
DE102021106058A1 (de) * | 2020-05-29 | 2021-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Speicherzelle und verfahren zum betreiben derselben |
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JPH0482085A (ja) * | 1990-07-25 | 1992-03-16 | Toshiba Corp | スタティック型メモリセル |
US5847990A (en) * | 1996-12-23 | 1998-12-08 | Lsi Logic Corporation | Ram cell capable of storing 3 logic states |
US6628540B2 (en) * | 2000-12-31 | 2003-09-30 | Texas Instruments Incorporated | Bias cell for four transistor (4T) SRAM operation |
US6751151B2 (en) * | 2001-04-05 | 2004-06-15 | International Business Machines Corporation | Ultra high-speed DDP-SRAM cache |
US6898111B2 (en) * | 2001-06-28 | 2005-05-24 | Matsushita Electric Industrial Co., Ltd. | SRAM device |
JP2003173681A (ja) * | 2001-12-07 | 2003-06-20 | Mitsubishi Electric Corp | 半導体メモリ回路およびラッチ回路 |
US6862207B2 (en) * | 2002-10-15 | 2005-03-01 | Intel Corporation | Static random access memory |
US6891745B2 (en) * | 2002-11-08 | 2005-05-10 | Taiwan Semiconductor Manufacturing Company | Design concept for SRAM read margin |
US20040156228A1 (en) | 2003-02-10 | 2004-08-12 | Artisan Components, Inc. | High density beta ratio independent core cell |
JP2004362695A (ja) * | 2003-06-05 | 2004-12-24 | Renesas Technology Corp | 半導体記憶装置 |
US6845059B1 (en) * | 2003-06-26 | 2005-01-18 | International Business Machines Corporation | High performance gain cell architecture |
-
2005
- 2005-02-28 US US11/069,018 patent/US7106620B2/en active Active
- 2005-11-17 CN CNB200510123501XA patent/CN100524518C/zh active Active
- 2005-12-02 TW TW094142696A patent/TWI420536B/zh active
Also Published As
Publication number | Publication date |
---|---|
US7106620B2 (en) | 2006-09-12 |
TW200639876A (en) | 2006-11-16 |
TWI420536B (zh) | 2013-12-21 |
US20060146638A1 (en) | 2006-07-06 |
CN1808621A (zh) | 2006-07-26 |
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