CN100524983C - Semiconducting laser device - Google Patents

Semiconducting laser device Download PDF

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Publication number
CN100524983C
CN100524983C CNB038237814A CN03823781A CN100524983C CN 100524983 C CN100524983 C CN 100524983C CN B038237814 A CNB038237814 A CN B038237814A CN 03823781 A CN03823781 A CN 03823781A CN 100524983 C CN100524983 C CN 100524983C
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China
Prior art keywords
semiconductor laser
exiting surface
reflecting surface
reflection unit
laser apparatus
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CNB038237814A
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CN1689203A (en
Inventor
阿里克西·米可哈洛夫
威兰德·希尔
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Hentze Lissotschenko Patentverwaltungs GmbH and Co KG
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Hentze Lissotschenko Patentverwaltungs GmbH and Co KG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Abstract

A semiconductor laser device includes a semiconductor laser element (1) with at least one glaring surface (5), and a laser beam can be emitted from the glaring surface and has a larger divergence on a first direction (Y) than on a vertical second direction. An external resonator is provided with at least one reflecting device (3, 9), which is provided with a reflecting surface (4, 10), and the reflecting surface can reflect at least partial laser beam emitted by the semiconductor laser element (1) via the glaring surface (5) back into the semiconductor laser element (1), which affects the wave mode spectrum of the semiconductor laser element (1). A lens device (2) is arranged in the external resonator between the reflecting device (3, 9) and the semiconductor laser element (1) and can at least partially reduce the divergence of the laser beam on the first direction (Y), and wherein, the reflecting surface (4, 10) of the reflecting device (3, 9) is concavely curved.

Description

Semiconductor laser apparatus
Technical field
The present invention relates to a kind of semiconductor laser apparatus, it comprises a semiconductor laser component with at least one exiting surface, by sending laser beam in the exiting surface, this laser beam has than divergence bigger on perpendicular second direction on a first direction, comprise that also at least one and exiting surface are spaced apart and arranged in the reflection unit with a reflecting surface of semiconductor laser component outside, in the laser beam reflected back semiconductor laser that this reflecting surface can send at least a portion by exiting surface by semiconductor laser component, thereby influence the mode spectrum of semiconductor laser, this device also comprises a lens devices that is arranged between reflection unit and the semiconductor laser component, and it can make the divergence of laser beam reduce at least on first direction at least in part.
Background technology
Semiconductor laser apparatus by 2002 27 volumes of OPTICS LETTERS the 3rd phase the 167th to 169 page of known a kind of above-mentioned form.Use a laser diode as semiconductor laser component in the described therein semiconductor laser apparatus, it is made of so-called broadband emitters.Have the exiting surface that for example is used for laser beam in this broadband emitters, they have the width of about 100 μ m and the height of about 1 μ m.On this width, can constitute the different laterally modes of complete sequence of laser beam in resonator inside inside, that constitute by the end face of laser diode.Also can send simultaneously vertical mode of complete sequence, promptly different laser beam wavelength.Especially a plurality of different horizontal modes impair the radiation quality of the laser beam that is sent by this broadband emitters.This laser beam can not focus on best.Vertically mode causes for the various spectral transmissions of not expected of using.
Therefore advise the resonator of an outside in above-mentioned document, it comprises the level crossing of a high reflection.At level crossing and in the face of being provided with a fast axis collimation mirror (Fast-Axis-Kollimationslinse) on the one hand between the semiconductor laser component exiting surface of external resonator, between fast axis collimation mirror and level crossing, be provided with spherical male lens on the other hand.Described fast axis collimation mirror is used for the laser of the broadband emitters of dispersing more strongly on first direction is calibrated.Described spherical male lens are used to make the laser of returning from flat mirror reflects to focus on like this, make laser turn back to imaging on the exiting surface basically.Externally has an aperture diaphragm in the resonator in addition.It is outside or be arranged on the normal or the central vertical line outside of exiting surface that not only aperture diaphragm but also level crossing all are arranged on the optical axis of external resonator.Verified, mode stronger in broadband emitters sends from exiting surface with a low-angle with respect to the exiting surface normal usually.Therefore the aperture diaphragm by being arranged in the axis outside can only incide minute surface with the part of this mode that sends from exiting surface with an angle; And from this minute surface by aperture diaphragm and the sphere lens reflected back exiting surface.Therefore have only the ray of one or more such modes to reflex in the laser diode by exiting surface.Laser diode is vibrated on this mode basically, make the mode spectrum of semiconductor laser component be reduced to a horizontal mode basically thus.
According to the described laser beam of prior art such decoupling from external resonator, make and to send from semiconductor laser component at aperture diaphragm and level crossing from the corresponding preferred laterally branch ray of mode that exiting surface sends with reverse mutually equal angular.
Verified defective in said apparatus is externally to have a large amount of relatively different optical elements in the resonator.Except the fast axis collimation mirror, also comprise sphere lens, aperture diaphragm and plane end mirror.Owing to externally have a plurality of different optical elements in the resonator, produce more image error on the one hand, produce bigger loss on the other hand, because these elements are positioned at laser resonator inside.The power output that this semiconductor laser component can be reached is severely limited.The power output that can reach by this semiconductor laser apparatus can only be realized with the higher cost expense.This in addition semiconductor laser apparatus also is very difficult to adjust.
Also attempt constructing according to prior art and influence the mode of semiconductor laser component spectrum by the active zone of noise spectra of semiconductor lasers element.This structure for example can comprise change refractive index on different directions, preferentially propagates each preferred laterally laser mode by the refractive index that changes in different directions thus.The laser of varying strength is realized thus to quantity in the electrode hole that for example can be used for combination again by different doping rate influences at the diverse location of active zone in addition.The method of above-mentioned two kinds of preferred each horizontal modes needs considerable processing charges, and can not obtain real gratifying semiconductor laser apparatus radiation quality and power output equally.
Summary of the invention
Therefore the objective of the invention is to realize the semiconductor laser apparatus of above-mentioned form, it guarantees to realize a higher relatively radiation quality and high power output with simple device.
Be achieved according to the technical characterictic of this purpose of the present invention by the following stated:
According to the present invention, a kind of semiconductor laser apparatus is provided, comprise a semiconductor laser component with at least one exiting surface, by sending laser beam in the exiting surface, this laser beam has than divergence bigger on perpendicular second direction on a first direction; At least one and exiting surface are spaced apart and arranged in the reflection unit with a reflecting surface of semiconductor laser component outside, in the laser beam reflected back semiconductor laser component that this reflecting surface can send at least a portion by exiting surface by semiconductor laser component, thereby influence the mode spectrum of semiconductor laser component; And a lens devices that is arranged between reflection unit and the semiconductor laser component, it can make the divergence of laser beam reduce at least on first direction at least in part; The reflecting surface towards semiconductor laser component of wherein said reflection unit is the concave shape bending, make described reflection unit form concave mirror, the refractive index of wherein said lens devices is between 1.7 to 1.9, and wherein select like this between the exiting surface of described reflecting surface and semiconductor laser component light apart from and/or the curvature of reflecting surface, the feasible laser beam that is reflected back toward semiconductor laser component correspond essentially to the aperture that constitutes by exiting surface to the ray waist of small part ray on exiting surface.Compare the additional spherical lens that can save in the external resonator by this method with above-mentioned prior art, because the reflecting surface of described recessed bending can be simultaneously as image-forming component.Can save the bothersome structure of above-mentioned semiconductor laser component active zone in addition, semiconductor laser component is realized without structure ground relatively.
The for example spherical ground bending of described reflecting surface.Can design like this at this lens devices mainly as the fast axis collimation mirror, making the divergence sent from exiting surface and pass the laser that prism apparatus sends all is being essentially identical for each horizontal mode on the first direction but also on perpendicular second direction not only.Described in this case reflecting surface can be on the first direction and all have the curvature of a basic identical size on perpendicular second direction.
As an alternative, also can make described reflecting surface in the curvature that has on the first direction and on perpendicular second direction in various degree.Lens devices as the fast axis collimation device should design so in this case, make send from exiting surface and pass prism apparatus after described divergence be different in first and second directions, make curvature in various degree on two orthogonal directions, concur like this, guarantee that thus desired branch ray realizes a reflection of the best relatively on exiting surface with the curvature in various degree of reflecting surface.
According to a preferred embodiment of the present invention, the light between the exiting surface of described reflecting surface and semiconductor laser component is apart from equaling the reflecting surface focal length on first direction at least substantially.Realize a confocal arrangement of reflecting surface and exiting surface in this way.Can minimum (ray waist) at this corresponding to the diameter of branch ray in the exiting surface plane of each horizontal mode, can help to select specific mode thus.
According to one embodiment of the present of invention, the exiting surface in the face of reflection unit of described semiconductor laser component has the width greater than 200 μ m.Advantageously, described exiting surface has the width greater than 500 μ m, especially greater than 1mm.The reflector of this non-constant width produces very high power on the one hand, on the other hand slow-axis direction, be reflector to extend the divergence that for example surpasses on the direction of 1mm be very little, especially almost little of the refraction border.Therefore reflecting surface described in this wide reflector have slightly crooked or even do not have bending all to be fine because small supplementary load loss since the residue that on slow-axis direction, remains disperse comparatively speaking and can ignore.A plane reflection face can be processed more easily and adjust more simply.
Advantageously, said reflecting surface or at least one reflecting surface can be selected element, especially optical grating constitution by wavelength.Can in this plane, without a doubt a grating be combined into wavelength selector by constitute reflecting surface by the plane.Can save additional wavelength thus and select element.
Preferably select the light distance and/or the curvature of reflecting surface in addition like this, the feasible diameter of branch ray in exiting surface corresponding to each horizontal mode that is reflected back toward the light of semiconductor laser component corresponds essentially to the aperture that is made of this exiting surface.Can save in this way in the resonator externally by the known additional aperture diaphragm of prior art.Last topology, orientation and the distance of selecting reflecting surface like this, a Fourier figure that makes automatic generation exiting surface reflection in the exiting surface plane.Being chosen in this and can realizing thus of a specific horizontal mode, promptly make described reflecting surface for example with one in the axis outside, promptly the low-angle in normal or central vertical line outside is arranged on the exiting surface.But also can select the mode that has perpendicular to the reflecting surface of access normal orientation along the normal transmission.Described in addition reflecting surface can be distinguished like this rotation, make send from exiting surface with desired angle, corresponding to the branch ray of given crosswise mode reflected back exiting surface accurately.Therefore can select a desired horizontal mode by position and the orientation of correspondingly selecting reflecting surface, it preferably is reflected back toward in the semiconductor laser component.Make described semiconductor laser apparatus send the laser beam that only has a horizontal mode or several horizontal modes basically with simple measure in this way.
Verified in this embodiment particularly advantageous is that described ray waist and exiting surface have approximate size, because produce on the one hand small loss, realizes a strong feedback on the whole width of exiting surface in other words at the whole width in reflector on the other hand.Strong feedback on the whole width at laser diode on the whole width and thus meaningfully encourages preferred mode equably in a big as far as possible part of the laser diode volume that helps Laser emission.
Described exiting surface is in the extension on the fast axle usually of the extension on the slow axis, because this fact, the verified embodiment according to semiconductor laser component of the present invention is particularly advantageous, and it has a lens devices and a reflection unit.Especially should use the reflection unit of a relative special long-focus of very short lens devices focal length, that be used as the fast axis collimation device with one.It may cause a too small ray waist according to also being on exiting surface on the slow-axis direction in the reflection unit of short focal length.Although by reflection unit defocus or variable in distance can realize a bigger ray waist, but in the reflection unit of a short focal length, will there be very many modes to feed back in the semiconductor laser component, because the distance of each mode in Fourier plane is very little under a very short focal length situation.Therefore preferably should use the reflection unit reflecting surface of a long-focus.
According to the present invention described semiconductor laser component is made of broadband emitters.But described semiconductor laser component is made of broadband emitters bar or heap.
Stipulate that preferably the exiting surface in the face of reflecting surface of described semiconductor laser component is antireflecting, wherein this antireflective especially can realize by a suitable coating.Can strengthen the feedback from the external resonator to the semiconductor laser component and significantly reduce the feedback of internal resonance device by this antireflective.Improve the influence of external resonator thus to mode spectrum.
According to a preferred embodiment of the present invention, described semiconductor laser component comprises two reflection units with two reflectings surface, and wherein these two reflectings surface are reverse mutually equal angular inclination with the normal with exiting surface respectively.
Wherein two of these two reflection units reflectings surface can have identical light distance with the exiting surface of semiconductor laser component.Can make in this way corresponding to a horizontal mode, be branch ray itself that mutually reverse equal angular sends from exiting surface respectively by on two reflection unit reflected back exiting surfaces with normal with exiting surface, improved light thus and be coupled into effect in the internal resonance device by external resonator.
According to one embodiment of the present of invention, at least one reflecting surface of described reflection unit is made of partially reflecting surface, make at least one reflection unit that is designed to partially reflecting surface as the decoupling device thus.As an alternative, also can make two reflectings surface of described reflection unit be designed to high reflection, one of them exiting surface that deviates from the semiconductor laser component of reflecting surface is designed to local reflex, and by this way as the decoupling device.
According to another selectable preferred embodiment of the present invention, an arrangement for deflecting is set between semiconductor laser component and reflection unit, it can with the branch inflection that sends from exiting surface at an angle with the normal of exiting surface to reflection unit.Said arrangement for deflecting especially can constitute like this: be branch ray that mutual reverse equal angular sends from exiting surface with normal and incide on the same position on the reflection unit reflecting surface with exiting surface, the branch ray is intersected mutually and the reflected back exiting surface on.Therefore this embodiment with additional deflection device has saved second reflection unit.
Especially can stipulate that at this described arrangement for deflecting and reflection unit are arranged on the axis that provides by the central vertical line on the exiting surface.Obtain an axially symmetric structure of external resonator in this way.
Can constitute by prism element according to arrangement for deflecting of the present invention.Said prism element can be provided with like this, makes the exiting surface of right-angle side plane in the face of semiconductor laser component.This also can be by suitably selecting prism element hypotenuse plane and the angle between the right-angle side plane and/or by suitably selecting the distance of arrangement for deflecting and exiting surface, branch ray that the normal with respect to exiting surface sends is at an angle intersected mutually by the reflecting surface of reflection unit.Therefore by using the prism element that between hypotenuse plane and right-angle side plane, has different angles and/or between arrangement for deflecting and exiting surface, have different distance, especially can select different horizontal modes.
Also can in above-mentioned structure with an arrangement for deflecting, make the reflecting surface of reflection unit be designed to local reflex, make reflection unit can be used as the decoupling device thus.As an alternative, also can make the reflecting surface of described reflection unit be designed to high reflection in this structure, the exiting surface that deviates from reflecting surface of wherein said semiconductor laser component is designed to local reflex, and can be used as the decoupling device by this way.
According to the present invention a wavelength can be set between semiconductor laser component and reflection unit and select element, it especially is made of etalon.Said wavelength selects element can be arranged between lens devices and the reflection unit.Select element can select specific vertical mode by this wavelength, especially make the laser beam of launching have vertical mode of a small spectral width.
Can also make described semiconductor laser component only apply voltage or electric current in the regional area of the spatial extension of the laser beam mode desired corresponding to according to the present invention, it is right to be used to produce the electrode hole.Desired laser beam mode can be further optimized in measure by this simple realization relatively.
Description of drawings
Other features and advantages of the present invention are by means of providing below in conjunction with the accompanying drawing description of preferred embodiments.In the accompanying drawing:
Fig. 1 a illustrates first embodiment according to semiconductor laser apparatus of the present invention with diagrammatic top view;
Fig. 1 b illustrates the view according to arrow Ib among Fig. 1;
Fig. 2 a illustrates second embodiment according to semiconductor laser apparatus of the present invention with diagrammatic top view;
Fig. 2 b illustrates the view according to arrow IIb among Fig. 2.
Embodiment
By Fig. 1 a and Fig. 1 b first embodiment according to semiconductor laser apparatus of the present invention as can be seen, it comprises that a semiconductor laser component 1, one especially are designed to the lens devices 2 of fast axis collimation mirror and the reflection unit 3 that at least one is made of concave mirror.Constitute an external resonator this reflective concave surface 4 with a semiconductor laser component exiting surface 5 in the face of reflection unit 3 in the face of semiconductor laser component 1.
Described semiconductor laser component 1 especially is made of semiconductor laser diode, and especially is designed to broadband emitters at this.In a broadband emitters, on the right side of Fig. 1 a and Fig. 1 b, have a surface of emission, it (sees that Fig. 1 a) has for example extension of 100 μ m, has for example extension of 1 μ m and (see Fig. 1 b) on the Y direction on directions X.So people are called slow axis with directions X and the Y direction are called fast axle in such broadband emitters.If observe each horizontal mode, this broadband emitters is especially at fast axle and have one thus much larger than in slow axis and the therefore divergence on directions X on the Y direction.In Fig. 1 a and Fig. 1 b, do not have actual this size relationship to be shown, but for the sake of clarity and to some extent change.
Described semiconductor laser component 1 is made of, wherein a plurality of above-mentioned broadband emitters space and centrally being provided with mutually on directions X laser diode bar.Described semiconductor laser component 1 is made of, wherein a plurality of this laser diode bar upper and lower settings on the Y direction the heap of this laser diode bar.
Can also make of the laser beam as much as possible antireflective of described exiting surface 5 according to the present invention for semiconductor laser component 1.
As what can see by Fig. 1 a and Fig. 1 b, described lens devices 2 can be made of cylindrical lens, its cylinder axis extends along directions X, lens devices 2 reduces the divergence of laser beam on quick shaft direction of sending from semiconductor laser component thus, perhaps also can collimate fully.This point is schematically expression in Fig. 1 b.
Described lens devices 2 for example can be made of the plano-convex cylindrical lens.Especially can constitute by non-circular cylinder at this this periphery.Described lens devices 2 preferably has a big aperture, only produces small image error thus.For example refractive index can be selected very highly, and for example between 1.7 to 1.9, especially this refractive index n can equal 1.82.Described focal length especially can be selected very for a short time, for example can select focal distance f=1mm.
That part of with minute ray 6,7 forms of the laser beam that sends from semiconductor laser component 1 only exemplarily is shown in Fig. 1 a and Fig. 1 b, and it does not comprise the mode that sends more by force relatively in the laser beam.Usually the strongest horizontal mode is angle [alpha], for example α=7 ° transmission with a normal 8 with exiting surface 5 in the above-mentioned semiconductor laser component that is made of broadband emitters 1.The direction of this normal in Fig. 1 a and Fig. 1 b corresponding to the Z direction.Be angle [alpha] with one with normal 8 and for example split into two branch rays 6 corresponding to the laser beam component that sends mode from what exiting surface 5 sent, 7, wherein first fen ray 6 be with a positive-angle α transmission with respect to the Z direction, and second fen ray 7 with one with respect to the Z direction or with the negative angle α transmission of normal 8.Therefore described minute ray 6 in Fig. 1 a medium dip upwards and to the right and incide on the reflective concave surface 4 of reflection unit 3.Described minute ray 7 in Fig. 1 a to the right with below extend, and can unhinderedly from semiconductor laser apparatus, send in one embodiment of the invention.
In another embodiment of the present invention, can one second reflection unit 9 be set with reflection unit 3 and exiting surface 5 identical distances, it has a reflective concave surface 10 in the face of exiting surface 5.This reflection unit 9 where necessary can local reflex, makes a part of laser beam can pass reflection unit 9 thus.According to the present invention a collimating mirror 11 can be set at this this reflection unit.Described reflection unit 9 is combined in the structure member with collimating mirror 11.(but not in Fig. 1 b) is shown in broken lines reflection unit 9 and collimating mirror 11 in Fig. 1 a.
Can select the curvature of described reflection unit 3 and the curvature of reflection unit 9 like this according to the present invention, make branch ray 6,7 basic self passbacks, they are incided on the exiting surface 5.At this reflecting surface 10 that can select the reflecting surface 4 of reflection unit 3 or reflection unit 9 like this and exiting surface 5 in minute ray 6 directions or divide light on ray 7 directions apart from D, the focal length F that makes the high reflection mirror that constitutes by recessed reflecting surface 4 or by reflecting surface 10 apart from D, therefore has F=D corresponding to light basically.Therefore, constituting among the embodiment of reflecting surface 4 F=R/2=D by sphere.For the different curvature of reflecting surface 4 on fast axle and slow-axis direction, described light is determined according to the radius on slow-axis direction according to above-mentioned formula apart from D.
Light by suitably selecting reflection unit 3 is apart from D or focal length in addition, make branch ray 6 corresponding to each horizontal mode, 7 equal to be reflexed to by reflection unit 3 and/or reflection unit 9 size on the exiting surface 5 of the semiconductor laser component 1 that the branch ray 6,7 on the exiting surface 5 is being made of broadband emitters substantially at the ray waist on the exiting surface 5.Therefore described exiting surface 5 is used as the aperture, and the branch ray 6,7 that reflects by it can enter semiconductor laser component 1 or be coupled into semiconductor laser component.
As mentioned above, reflection unit 3,9 is made of spherical concave mirror.At such reflection unit 3, should determine size in 9 structures like this as the lens devices 2 of fast axis collimation mirror, make branch ray 6 corresponding to a horizontal mode, 7 divergence from exiting surface 5, pass after the lens devices 2, have a divergence that corresponds essentially on directions X in the Y direction, for example in the zone of reflection unit 3,9, also therefore divide the ray divergence degree and the ray cross section of the phase pairing approximation of ray 6,7 thus at directions X and the appearance of Y direction at slow-axis direction and quick shaft direction.Letter illustrates such execution mode in Fig. 1 a and Fig. 1 b.
If use the lens devices 2 of other structure, especially divide ray 6,7 almost completely or fully collimate, can use recessed cylindrical mirror as reflection unit 3,9, it has one and the obvious curvature of cylinder axis is arranged on the Y direction and does not have or only have very small obvious curvature fully on perpendicular direction.Not shown this embodiment in Fig. 1 a and 1b.
By embodiment ray of described each minute 6 in conjunction with Fig. 1 a and Fig. 1 b; 7 back reflective process accurately feeds back in the semiconductor laser component 1 ray of this horizontal mode of selecting; described minute ray is a specific part of selecting mode; this horizontal mode of selecting more or less is selected well, and promptly described semiconductor laser component 1 is substantially only launched this mode.If according to the external resonator of being made up of reflection unit 3 and reflection unit in case of necessity 10 and exiting surface of the present invention, semiconductor laser component 1 an emitted laser ray that is made of broadband emitters will not have the horizontal mode of complete sequence and vertical mode of complete sequence.By an above-mentioned horizontal mode of selecting is fed back in the semiconductor laser component 1, can more or less make the emitted laser ray include only this horizontal mode substantially well.For laser beam also is made up of a longitudinal wave mould thus a wavelength substantially, externally add an additional wavelength in the resonator and select element 12, it for example is made of etalon.This wavelength selects element 12 (but not in Fig. 1 b) with dashed lines in Fig. 1 a to be arranged between reflection unit 3 and the lens devices 2.As an alternative, also can select to make this wavelength to select element 12 to combine, especially be combined to this reflection unit the inside with reflection unit 3.
According to the present invention, among Fig. 1 b for for the purpose of clearer and unshowned reflection unit 9 can be designed as local reflex, make reflection unit 9 play the effect of decoupling device simultaneously thus.As an alternative, also can select to make reflection unit 9 to have one and be the concave surface 10 of total reflection comparatively speaking.Can make in this case parallel with exiting surface 5, be arranged on semiconductor laser component 1 and constitute back to the exiting surface 13 of external resonator one side face by only local reflex, make exiting surface 13 as the decoupling device thus.In order to show this embodiment, in the left side of semiconductor laser component 1 ray 14 is shown in Fig. 1 a and Fig. 1 b, they can schematically represent bearing the laser beam that the Z direction is sent from exiting surface 13.
According to the present invention semiconductor laser component 1 is not relatively constructed, especially needn't be provided for preferentially propagating the guider of a specific laser mode.
It is right to make the power supply in a regional area of 1 of described semiconductor laser component be used to produce the electrode hole in addition, and wherein this regional area laser mode of corresponding essentially to the desired laser beam that is energized distributes in semiconductor laser component 1 volume inside.Therefore all the other zones of described semiconductor laser component 1 are not furnished with electrode, therefore do not import to be used to produce the right electric current in electrode hole in these zones.Can further optimize desired laser mode by this arrangement of electrodes targetedly selects.
In Fig. 2 a and the embodiment shown in Fig. 2 b identical parts be furnished with Fig. 1 a and Fig. 1 b in identical Reference numeral.At the embodiment shown in Fig. 2 a and Fig. 2 b and in the difference of the embodiment shown in Fig. 1 a and Fig. 1 b is that a prism element 15 is set between lens devices 2 and reflection unit 3.In addition with Fig. 1 a and Fig. 1 b in embodiment different be that also described reflection unit 3 and normal 8 or the rotation of central vertical line on the exiting surface 5 are provided with symmetrically.Described prism element 15 is used to make the branch ray 6,7 that sends from exiting surface 5 with an angle ± α to deflect with respect to normal 8 or the optical axis that is made of normal 8.Described for this reason prism element 15 has a hypotenuse plane 16 of extending in X-Y plane.This hypotenuse plane 16 is arranged on the side of prism element 15 in the face of reflection unit 3.Have two right-angle side planes 17 at prism element 15 in the face of a side of exiting surface 5 or lens devices 2, they respectively with hypotenuse plane 16 shapes β in an angle, select this angle corresponding to α.For example β can double α approximately.Described right-angle side plane 17 not only with hypotenuse plane 16 and also with X-Y plane shape β in an angle, branch ray 6,7 is being interrupted at (not shown in Fig. 2 a and Fig. 2 b) on the hypotenuse plane 16 on the right-angle side plane 17 and then.
The curvature of the reflecting surface 4 of described reflection unit 3 preferably can be selected like this according to the present invention, with identical angle [alpha] up or down and the branch ray 6,7 that on positive Z direction, sends from exiting surface 5 intersect mutually respectively by reflecting surface 4.By 6 expressions of three branch rays that send, their transition on reflecting surface 4 are three branch rays 7 in Fig. 2 a.
Light in the embodiment shown in Fig. 2 a and the 2b between all right selection reflecting surface 4 like this and the exiting surface 5 makes D equal the R/2=F of reflecting surface 4 apart from D.Can also select ray waist like this according to the present invention equally apart from the focal length of D or reflection unit 3 by selective light suitably, make it correspond essentially to the aperture that provides by exiting surface 5 by the branch ray 6,7 on the reflecting surface 4 reflected back exiting surfaces 5.
In according to the embodiment among Fig. 1 a and Fig. 1 b, can realize the selection of each mode thus, reflection unit 3 or reflection unit 3,9 are rotated like this, make from exiting surface 5 branch rays that send and that incide on the reflection unit 3 itself to return.Therefore by reflecting surface 4,10 be rotated in and normal 8 forms between the mode of different angles α and selects.
In the embodiment according to Fig. 2 a and 2b, mode is selected and can be realized by the angle beta of change prism element 15 and by move prism element 15 along the Z direction.Select with normal 8 and therefore form the mode of a respective angles α with the Z direction according to the size of angle beta, it is substantially accurately transferred in the zone of reflecting surface 4 by prism element 15 up or down and at the branch ray that positive Z direction is sent from exiting surface.
In the embodiment of Fig. 2 a and 2b, it is contemplated that two kinds of decoupling methods according to the present invention.On the one hand, described reflection unit 3 can be made of the reflection unit of a local reflex.Make a part of laser beam in Fig. 2 a, on the Z direction, pass reflection unit 3 to the right and thus thus.As an alternative, also can select to make described reflection unit 3 to constitute by the reflection unit of basic total reflection, and left exiting surface 13 local reflexs of the semiconductor laser component 1 in Fig. 2 a ground constitutes, thus can negative Z direction send corresponding to shown in the laser beam of ray 14.In right exiting surface 5 antireflective relatively preferably of the semiconductor laser component 1 of Fig. 2 a, branch ray 6,7 is fed back in the semiconductor laser component in both cases, reduce the feedback of internal resonance device simultaneously.
In according to the external resonator of Fig. 2 a and Fig. 2 b, also can add a wavelength and select element 12.

Claims (26)

1. a semiconductor laser apparatus comprises
-one semiconductor laser component (1) with at least one exiting surface (5), by sending laser beam in the exiting surface, this laser beam has than divergence bigger on perpendicular second direction on a first direction (Y);
At least one and exiting surface (5) are spaced apart and arranged in the reflecting surface (4 that has of semiconductor laser component (1) outside, 10) reflection unit (3,9), in the laser beam reflected back semiconductor laser component (1) that this reflecting surface can send at least a portion by exiting surface (5) by semiconductor laser component (1), thereby influence the mode spectrum of semiconductor laser component (1); And
-one lens devices (2) that is arranged between reflection unit (3,9) and the semiconductor laser component (1), it can make the divergence of laser beam reduce at least on first direction (Y) at least in part;
The reflecting surface towards semiconductor laser component (1) of wherein said reflection unit (3,9) (4,10) is the concave shape bending, makes described reflection unit (3,9) form concave mirror,
The refractive index of wherein said lens devices is between 1.7 to 1.9, and wherein
Select described reflecting surface (4 like this, 10) and the light between the exiting surface (5) of semiconductor laser component (1) apart from (D) and/or reflecting surface (4,10) curvature, what make the laser beam be reflected back toward semiconductor laser component (1) corresponds essentially to the aperture that is made of exiting surface (5) to the ray waist of small part ray on exiting surface (5).
2. semiconductor laser apparatus as claimed in claim 1 is characterized in that, the spherical ground of described reflecting surface (4,10) is crooked.
3. semiconductor laser apparatus as claimed in claim 1 or 2 is characterized in that, described reflecting surface (4,10) is gone up and have big or small essentially identical curvature on perpendicular second direction at first direction (Y).
4. semiconductor laser apparatus as claimed in claim 1 or 2 is characterized in that, described reflecting surface (4,10) is gone up and have in various degree curvature on perpendicular second direction at first direction (Y).
5. semiconductor laser apparatus as claimed in claim 1 is characterized in that, the light between the exiting surface (5) of described reflecting surface (4,10) and semiconductor laser component (1) equals reflecting surface (4, the 10) focal length on first direction (Y) at least apart from (D).
6. semiconductor laser apparatus as claimed in claim 1 is characterized in that, the exiting surface (5) in the face of reflection unit (3,9) of described semiconductor laser component has the width greater than 200 μ m.
7. semiconductor laser apparatus as claimed in claim 6 is characterized in that, described exiting surface (5) has the width greater than 500 μ m, perhaps has the width greater than 1mm.
8. as claim 6 or 7 described semiconductor laser apparatus, it is characterized in that described reflecting surface (4,10) selects element to constitute by wavelength.
9. semiconductor laser apparatus as claimed in claim 2 is characterized in that, described semiconductor laser component (1) is made of broadband emitters.
10. semiconductor laser apparatus as claimed in claim 9 is characterized in that, described semiconductor laser component (1) is made of broadband emitters bar or broadband emitters heap.
11. semiconductor laser apparatus as claimed in claim 1 is characterized in that, semiconductor laser component (1) is in the face of exiting surface (5) antireflective of reflecting surface (4,10).
12. semiconductor laser apparatus as claimed in claim 1, it is characterized in that, described semiconductor laser apparatus has two reflection units (3,9), each reflection unit has a reflecting surface respectively, wherein two of these two reflection units reflectings surface (4,10) respectively with respect to the normal (8) on the exiting surface (5) is identical with size but the angle (α) that direction is opposite tilt.
13. semiconductor laser apparatus as claimed in claim 12 is characterized in that, two reflectings surface (4,10) of described two reflection units (3,9) have the light identical with the exiting surface (5) of semiconductor laser component (1) apart from (D).
14. as claim 12 or 13 described semiconductor laser apparatus, it is characterized in that at least one reflecting surface (4 of described reflection unit (3,9), 10) be designed to partially reflecting surface, make at least one reflection unit of being furnished with partially reflecting surface (10) (9) thus as the decoupling device.
15. as claim 12 or 13 described semiconductor laser apparatus, it is characterized in that, described reflection unit (3,9) two reflectings surface (4,10) be designed to high reflection, exiting surface back to reflecting surface (4,10) (13) of wherein said semiconductor laser component (1) is designed to local reflex also by this way as the decoupling device.
16. semiconductor laser apparatus as claimed in claim 1, it is characterized in that, between semiconductor laser component (1) and reflection unit (3), an arrangement for deflecting is set, the branch ray (6,7) that sends from exiting surface (5) on the direction that is angle (α) with respect to the normal (8) on the exiting surface (5) is deflected on the reflection unit (3).
17. semiconductor laser apparatus as claimed in claim 16 is characterized in that, described arrangement for deflecting and reflection unit (3) are arranged on by on the given axis of the central vertical line on the exiting surface (5).
18., it is characterized in that described arrangement for deflecting is made of prism element (15) as claim 16 or 17 described semiconductor laser apparatus.
19. semiconductor laser apparatus as claimed in claim 18 is characterized in that, described prism element (15) is provided with like this, makes the exiting surface (5) of right-angle side plane (17) in the face of semiconductor laser component.
20. semiconductor laser apparatus as claimed in claim 18, it is characterized in that, hypotenuse plane (16) by suitably selecting prism element (15) and the angle (β) between right-angle side plane (17) and/or by suitably selecting the position of prism element (15) between exiting surface (5) and reflecting surface (4), can make that (the branch ray (6,7) that sends from exiting surface on ± α) the direction intersects mutually by the reflecting surface (4) of reflection unit (3) be angle with respect to the normal (8) on the exiting surface (5).
21. semiconductor laser apparatus as claimed in claim 16 is characterized in that, the reflecting surface (4) of described reflection unit (3) is designed to local reflex, makes this reflection unit (3) can be used as the decoupling device thus.
22. semiconductor laser apparatus as claimed in claim 16, it is characterized in that, the reflecting surface (4) of described reflection unit (3) is designed to high reflection, and wherein semiconductor laser component (1) is designed to local reflex and can be by this way as the decoupling device back to the exiting surface (13) of reflecting surface (4).
23. semiconductor laser apparatus as claimed in claim 1 is characterized in that, a wavelength is set between semiconductor laser component (1) and reflection unit (3,9) selects element (12).
24. semiconductor laser apparatus as claimed in claim 1 is characterized in that, described lens devices (2) is made of cylindrical lens, and its cylinder axis extends upward in the second party vertical with first direction (Y) basically.
25. semiconductor laser apparatus as claimed in claim 1, it is characterized in that, described lens devices (2) constitutes like this, makes the laser beam that sends from exiting surface (5) have divergence with basic identical size on perpendicular second direction at first direction (Y) afterwards passing lens devices (2).
26. semiconductor laser apparatus as claimed in claim 1, it is characterized in that, described semiconductor laser component (1) only applies voltage or electric current in the regional area of the spatial extension of the laser beam mode desired corresponding to, be used to produce electron hole pair.
CNB038237814A 2002-09-02 2003-07-30 Semiconducting laser device Expired - Fee Related CN100524983C (en)

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DE2002140949 DE10240949A1 (en) 2002-09-02 2002-09-02 Semiconducting laser device has at least one external reflection arrangement with concave reflective surface that can reflect at least some laser light back to influence laser light mode spectrum
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