CN100526901C - 用于探测具有突起的接触元件的晶片的探测卡 - Google Patents

用于探测具有突起的接触元件的晶片的探测卡 Download PDF

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CN100526901C
CN100526901C CNB2005100551062A CN200510055106A CN100526901C CN 100526901 C CN100526901 C CN 100526901C CN B2005100551062 A CNB2005100551062 A CN B2005100551062A CN 200510055106 A CN200510055106 A CN 200510055106A CN 100526901 C CN100526901 C CN 100526901C
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detecting card
card assembly
probe substrate
detecting
inserter
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CN1702470A (zh
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B·N·埃尔德里奇
G·W·格鲁伯
G·L·马蒂厄
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FormFactor Inc
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FormFactor Inc
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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Abstract

提供了一种探测卡组件，包括：一探测卡(321)，它包括多个电气接触件(331，332)；一探头基底(324)，它具有多个接触衬垫(336)，该接触衬垫设置用来接触一待探测器件(310)的突起的弹性接触元件(301)；一插入器(325)，它设置在探测卡和探头基底之间并与它们间隔开；改变探头基底相对于探测卡取向的装置(322)；以及多个细长的互连元件(333，334)，它们通过探测卡和探头基底之间的插入器提供柔性的电气连接，从而使电气接触件与接触衬垫相接触。

Description

用于探测具有突起的接触元件的晶片的探测卡
本申请是申请号为99813790.1、申请日为1999年12月2日的专利申请的分案申请。
技术领域
本发明涉及一种用于接触具有突起的接触结构的电子元件的装置。本发明尤其适合于探测具有弹性接触结构的晶片。
背景技术
在制造半导体器件的技术中已众所周知，对某些器件要在其尚未从晶片上分离之前先就其某些功能度进行测试。传统上，这是用一探测卡和一探头来实现。图1中示出了一代表性的探测卡。该探测卡安装于一探头中，该探头进而高精度地检测探测卡的位置和取向以及待测试的晶片的位置和取向，然后使这两者精确地对齐。探测卡进而连接于一测试器，从而在测试器与晶片上的一或多个器件之间提供连接。测试器可给测试中的器件(DUT)通电，并评价该器件的性能。该过程可根据需要重复，用以基本上测试晶片上的每个器件。通过测试标准的器件才供进一步加工。
一种特别有用的探测卡是利用弹性元件来接触晶片。这种探测卡示于图1中。该探测卡详细描述于名为“将探测卡组件的探头尖端整平的方法”的经普通转让的美国专利No.5,974,662中，其相应的PCT申请以WO96/15458于1996年5月23日公开。
半导体器件系在半导体晶片上制造，但必须经分离并连接于外部装置以实现功能。多年来，连接半导体的标准方法是以通常为铝材料的衬垫来制造半导体器件。这些衬垫通常用丝焊连接于较大的结构，该结构通常是引线框架。引线框架可以安装在一合适的外壳中，该外壳通常由陶瓷或塑料制成。外壳上的连接部的间隔设计成与一电路板或其它诸如插座之类的匹配装置相配合。这些年来，在外壳方面的创新使外壳中的间隔相对较小，并且引线脚的数量更高。
在BGA外壳中，可以看到显著不同于这种外壳范例的变化。在此，接触点是可软熔材料的球粒。一般是使用焊料，使外壳可定位在一接触区域，然后经加热而使焊料软熔，从而提供可靠的电气连接。这一相同的原理可用在芯片级场合，以在接触区域上形成小突起。常用的工艺是制成C4球(可控塌陷芯片连接法)。
传统的探测卡是设计成接触传统的接合衬垫，该接合衬垫通常是铝。图1的新型探测卡可用于这一用途。鉴于许多原因，探测C4球是较为复杂的，但图1的探测卡也可很好地适用于此用途。
现在已经有新型的外壳，它允许直接在半导体晶片上形成小的弹性接触结构。这是几个专利的主题，包括于1998年11月3日颁发的美国专利5,829,128。这里在图2中示出了一示例性的实施例，即晶片208，它具有连接于端子226的弹簧224。
已经披露有一种大型接触器，用于接触一构制有弹性接触元件的半导体晶片的局部或全部。在1997年1月15日提交的、经普通转让的待批美国专利申请No.08/784,862中描述了固定和老化工艺，该申请整个援引在此供参考。相应的PCT申请以WO 97/43656在1997年11月20日公开。
发明内容
本发明的一个目的在于提供一种用于探测具有突起的接触元件的半导体器件的探测卡。
本发明的另一个目的在于对一具有突起的接触元件的电子元件进行探测。该电子元件可包括一带外壳的半导体，诸如一BGA外壳。
本发明提供了一种探测卡组件，包括：一探测卡，它包括多个电气接触件；一探头基底，它具有多个接触衬垫，该接触衬垫设置用来接触一待探测器件的突起的弹性接触元件；一插入器，它设置在探测卡和探头基底之间并与它们间隔开；改变探头基底相对于探测卡取向的装置；以及多个细长的互连元件，它们通过探测卡和探头基底之间的插入器提供柔性的电气连接，从而使电气接触件与接触衬垫相接触。
通过以下的描述及附图，可以更成分地理解本发明的上述和其它的目的和优点以及一示例性实施例的细节。
附图说明
图1表示一用于探测传统半导体器件的探测卡。
图2表示一用于探测具有突起的接触元件的半导体器件的探测卡。
图3表示用于探测具有突起的接触元件的半导体器件的探测卡的第二个实施例。
图4到9表示用于形成适用于本发明的探测卡中的一柱销的工艺的诸步骤。
图10和11表示本发明的与一具有行程止动保护件的晶片一起使用的装置。
具体实施方式
图1的探测卡组件已在上述经普通转让的美国专利No.5,974,662中作了详细的描述。该图是5,974,662专利的图5，该专利使用的是500系列的标号，而在这里重新标号为100系列。
参见图2，图1的探测卡组件经略微修改而用于新的用途。相同的构件包括安装于一探头(未图示)中的支承探测卡102。插入器112包括弹簧114和相应的弹簧116，它们通过插入器相连接，使相应的端子110和120电气连接。在间隔变换器106中，相应的端子120和222(图1中的122)相连接。探测卡102支承连接电路，因而一测试引线可连接于一相应的端子110，然后通过114、116、120和222(或122)接纳来自一半导体器件的连接部。在图1中，弹性接触元件124连接于端子122，并与半导体晶片108上的端子126相接触。在图2中，半导体晶片208具有端子226，这些端子进而具有突起的接触元件，在这里是弹性接触元件224，它们可与相应端子222的相应接触区域相接触，从而实现一个通到测试器的回路。测试器可对一个连接的半导体器件通电，以评价该器件的功能性。
具有弹簧114和116的插入器112压靠于端子110和120上。通过将间隔变换器106克服插入器112的弹簧力而朝探测卡102压，即使端子110和端子120的弹簧114、弹簧116的尖端的平面度不佳，插入器也可保持与各个相应的端子110和120接触。而且，在各构件的弹性极限范围内，间隔变换器可相对于探测卡而倾斜，以允许在某些尺寸下的对准。可非常精确地调节差动螺钉138和136，以使间隔变换器的表面118相对于探测卡102重新定向。因此，可使任何相应连接于间隔变换器的元件定向。图1中的弹簧124和图2中的端子222的尖端可以相对于半导体晶片而作高精度地定位。
参见图3，图中可以看到图2诸构件的另一实施例。主要的构件的功能与参照图2所描述的相同。间隔变换器324支承端子336和335，它们适当地相连接。插入器325支承弹性接触元件334和333。探测卡321支承端子332和331，它们适当地相连接。通常，来自测试器的一引线将连接于端子331，该端子进而连接于端子332，然后通过弹性接触元件333和334连接于端子335，最后连接于相应的端子336。支承弹簧320将间隔变换器324保持压靠于插入器325和探测卡321上。定向装置322以上述方式工作，精调间隔变换器相对于探测卡321的取向。
图3更大范围地示出了半导体晶片310，它在这里具有几个不同的半导体器件311。在此，示出了一单个的半导体器件，它几乎与相应的端子336相连。通过使半导体晶片310朝探测卡321移动，可使一微弹簧接触件336与相应端子336的接触区域直接而紧密地接触，并因此而连接于一相应的测试器引线。在测试后，可对半导体晶片重新定位，使另一个半导体器件与探测卡组件上的相应端子相接触。
图4示出了制造柱销结构的一特别优选的方法。制造插入器、间隔变换器和探测卡的细节详细描述于经普通转让的美国专利No.5,974,662中以及该专利所引用的早先申请中。
参见图4，在结构400中，支承基底405包括端子410、互连件420和端子415。合适的材料以及备选成分详细描述于所引用的申请中。对于一较佳实施例，支承基底是一多层陶瓷基底。导电层417连接多个端子415(其它端子未图示出)。对随后步骤的更详细的描述可参见名为“平版印刷接触元件”的、经普通转让的待批美国专利申请No.09/205,423以及于1999年11月23日提交的相应PCT申请(申请号还未知悉)。图4到7是摘自该相应申请的图1到4。
在电镀工艺中，在需要电镀的元件之间提供一共用的连接部是有利的，可用以提供一合适的电镀回路。可以使用其它的镀覆方法来形成类似于本文所述的结构。此类方法描述或引用于美国专利No.5,974,662及提供支持的申请中。短路层、诸如417的另一种方法是，提供一直接连接多个端子410(这里仅示出一个)的短路层407。这两种方法在这里均示出，但实际上通常仅使用其中的一种。当没有方便的方法来通过基底进行连接时，使用一“顶”层、诸如407尤为有利。当使用硅作为基底或者某些陶瓷、聚酰亚胺或其它材料的结构时，情况也可能是如此。
短路层407可通过溅射法来涂覆。材料、厚度、加工偏差等的细节可参见1998年2月26日提交的、名为“平版印刷形成的微端子接触结构”的、经普通转让的相应美国专利申请09/032,473以及以WO 98/52224在1999年11月19日公开的相应PCT申请，这两个申请整个援引在此供参考。一种尤为优选的材料是钨和钛的合金。它可以通过溅射法来涂覆。有效的深度约为3000到6000埃，例如约为4500埃。也可以使用各种不同的钛合金或钨合金。
可将一抗蚀层、诸如一负光致抗蚀剂425涂覆于基底的表面(当然是位于任何其它所涂覆的层的顶部)。该抗蚀层的图案形成为在端子410上留下一个开口。
将一种合适的结构材料430涂覆于光致抗蚀剂的开口中，并溢出该开口。在一较佳实施例中，电镀涂覆诸如镍钴合金之类的材料。可以使用的其它材料包括铜、钯、钯钴以及含这些材料的合金。其它诸如溅射之类的涂覆方法也是合适的。
可用诸如化学-机械抛光之类的抛光或研磨工艺来去除多余的结构材料，以形成一高度平整的结构。而且，对基底上的其它结构进行平整化。在一单个柱销的区域中和在一系列柱销上要求有最小的高程差。希望达到约为1/1000的平整度(在相对较远的相应特征处测量的表面以上高度)，但给定设计的特定约束可较好地允许达2—5—10/1000甚至更大。这与每直线英寸约为100微英寸或每厘米约为1微米的高度一致性相对应。
在一较佳实施例中，涂覆一附加的接触层。参见图8，在结构材料430上涂覆有一接触层431。在一较佳实施例中，该层是通过电镀涂覆的。优选的材料是钯和钴的合金。可以使用的其它材料包括钯、硬质黄金、软质黄金和铑。厚度可以根据接触元件制造技术领域的技术人员所掌握的设计标准来进行选择。在一较佳实施例中，厚度约为0到200微英寸(约为0到5微米)。
剥去光致抗蚀剂的面层，并去除导电层407或417，从而完成该结构。可以使用的技术包括灰化、湿蚀刻以及激光消融。有关时间、材料和条件的细节在现有技术中是众所周知的。参见图9，之后，可将所完成的结构400装入如图2或3所示的一探测卡组件中。
使用这种方法，端子的几何结构相当灵活，设计者在设计时有较大的自由度。形成横截面(基本平行于基底表面的XY平面)基本为方形的柱销相当简单。在X和Y方向上约为1到10毫英寸。显然，这里可以设计几乎任何的尺寸和形状。使结构高出基底表面约0到60毫英寸(0到1.5毫米)是有利的。当然，端子实际上可以凹陷到基底表面以下，只要所有端子都高度平坦即可。可以使用的高度约为5到10毫英寸(125到250微米)。另一个较佳实施例包括高度约为40到60毫英寸(约1到1.5毫米)的结构。
使探头结构定向，使其尽可能与待测试的晶片的平面对齐，这是非常有利的。使间隔变换器的表面适度地平整，这也是非常有益的。假如晶片上的诸弹性接触结构的接触端(从一个方面讲是“尖端”)基本是共面的，使共面的尖端穿过对齐的平面而与共面的端子相接触意味着这些尖端可被压下一最小的量以确保所有尖端与所有端子接触。无论在尖端、端子或接触平面的不对齐中存在多少不共面性，它们均会使尖端的某些部分必须移动更长距离以确保所有尖端都处于令人满意的接触状态。这里所描述的结构可以很容易地制得相对较平，并成功定向成在晶片上实现最小驱动。在一较佳设计中，约为3毫英寸(75微米)的超程是一个有利的设计点。也就是说，从第一尖端接触一相应端子的点，与该尖端相对应的基部被驱动这段超程距离而变得更靠近于端子。这就将尖端压靠于端子上，在许多设计中，这使尖端在端子上滑动，从而钻入和穿过可能存在于尖端或端子上的任何污垢。这也可使其它的尖端与相应的端子相接触。如果构件经适当设计和对齐，经选择的超程度将使最后接触相应端子的尖端仍能够建立合适的接触。
具有弹簧的晶片的某些例子具有一超程止动保护件。这种超程止动保护件详细描述于以单独发明人Benjamin Eldridge名义于1998年7月13日提交的、名为“互连组件和方法”的美国专利申请09/114,586以及相应的、于1999年1月4日提交的PCT申请US 99/00322中。参见图10，图中可以看到这种超程止动保护件的一个例子。将半导体晶片1008制成包括端子1026，并具有弹性接触元件1024。比较图2中的208、226和224。另外，包括一超程止动保护件1025。在一较佳实施例中，它是采用固化的环氧树脂的形式。该保护件可采用许多形式。如图所示，该保护件或多或少可以是环氧树脂领域，它基本是平的，并具有仅用于弹性接触元件1024的开口。止动保护件的高度选择成使各弹性接触元件可变形所需的量但可变化到保护件的高度的“下方”，从而有效地限制超程。具有这种止动保护件的晶片可以用以上在图2和3中所描述的同一装置来测试。
参见图10和11，当弹性接触元件1024最初接触相应端子222时，弹性接触元件先接触相应的端子，然后开始刮擦其表面。在图11中，弹性接触元件1024A已处于接触状态，并已受压一定的程度。在图11中，各端子222已与一相应的超程止动保护件1025相接触，不会进一步压下相应的弹性接触元件1024A。如果半导体晶片1008被进一步朝探测卡102(图10中所示)驱动，则超程止动保护件1025将压靠于端子222上，从而将间隔变换器106朝探测卡102驱动。利用半导体晶片1008上足够的驱动力，探测卡102将朝离开半导体晶片的方向变形。设计者可选择探测卡的刚性，以适应预计的探测力。一个需要考虑的因素是预计将要接触探测卡组件的弹性接触元件的数量。另一个因素是各弹簧的弹簧常数。另一个需要考虑的因素是当探测卡被过度驱动时探测卡应屈服多少。通常，如果每个弹性接触元件的弹簧常数为Ks，则对于n个弹簧来说，接触弹簧的有效弹簧率为nKs。在一个较佳实施例中，探测卡的弹簧率Kpcb大于或等于nKs。尤为优选的是，Kpcb约为nKs的2倍。
一个尤为优选的操作模式是使超程止动件均匀地碰到探测卡组件，进而提供很小的或不提供额外的力。
以上总的描述了使用本发明的装置和方法以及本发明的一较佳实施例。本技术领域的技术人员在上述装置和方法的许多方面可以认识到和能够进行许多变化，包括落在本发明揭示范围之内的各种变型。本发明的精神和范围仅应由所附权利要求书限定。

Claims (14)

1.一种探测卡组件，包括：
一探测卡(321)，它包括多个电气接触件(331，332)；
一探头基底(324)，它具有多个接触衬垫(336)，该接触衬垫设置用来接触一待探测器件(310)的突起的弹性接触元件(301)；
一插入器(325)，它设置在探测卡和探头基底之间并与它们间隔开；
改变探头基底相对于探测卡取向的装置(322)；以及
多个细长的互连元件(333，334)，它们通过探测卡和探头基底之间的插入器提供柔性的电气连接，从而使电气接触件与接触衬垫相接触。
2.如权利要求1所述的探测卡组件，其特征在于，所述多个细长的互连元件从插入器的两相对表面上延伸出来。
3.如权利要求1所述的探测卡组件，其特征在于，每个细长互连元件设置成穿过插入器中的一开口，每个细长互连元件的两相对端与互连结构的相对表面间隔开。
4.如权利要求1所述的探测卡组件，其特征在于，所述多个细长互连元件朝探测卡和探头基底施力。
5.如权利要求4所述的探测卡组件，其特征在于，所述力是弹簧力。
6.如权利要求1所述的探测卡组件，其特征在于，所述细长互连元件是弹性的。
7.如权利要求1所述的探测卡组件，其特征在于，探头基底包括一间隔变换器。
8.如权利要求7所述的探测卡组件，其特征在于，所述改变探头基底相对于探测卡取向的装置(322)包括至少一个可动元件，该可动元件设置成其沿第一方向的移动使得间隔变换器的至少一部分朝探测卡移动。
9.如权利要求8所述的探测卡组件，其特征在于，所述可动元件沿第二方向的移动允许间隔变换器的至少一部分移动离开探测卡。
10.如权利要求1所述的探测卡组件，其特征在于，所述多个接触衬垫包括多个从探头基底延伸出来的柱销(336)。
11.一种探测卡组件，包括：
一探测卡(321)，它包括多个电气接触件(331，332)；
一探头基底(324)，它具有多个接触衬垫(336)，该接触衬垫设置用来接触一待探测器件(310)的突起的弹性接触元件(301)；
一插入器(325)，它设置在探测卡和探头基底之间并与它们间隔开；
多个细长的互连元件(333，334)，它们通过探测卡和探头基底之间的插入器提供柔性的电气连接，从而使电气接触件与接触衬垫相接触；以及
至少一个可动元件(322)，该可动元件设置成影响探头基底相对于探测卡的取向。
12.如权利要求11所述的探测卡组件，其特征在于，所述可动元件具有螺纹。
13.如权利要求11所述的探测卡组件，其特征在于，所述可动元件包括差动螺钉。
14.如权利要求11所述的探测卡组件，其特征在于，它还包括多个可动元件，每个可动元件设置成影响探头基底的一部分相对于探测卡基底的一部分的位置。
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Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020053734A1 (en) 1993-11-16 2002-05-09 Formfactor, Inc. Probe card assembly and kit, and methods of making same
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US7382142B2 (en) * 2000-05-23 2008-06-03 Nanonexus, Inc. High density interconnect system having rapid fabrication cycle
US6917525B2 (en) * 2001-11-27 2005-07-12 Nanonexus, Inc. Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs
US6812718B1 (en) 1999-05-27 2004-11-02 Nanonexus, Inc. Massively parallel interface for electronic circuits
US7349223B2 (en) * 2000-05-23 2008-03-25 Nanonexus, Inc. Enhanced compliant probe card systems having improved planarity
US6939474B2 (en) 1999-07-30 2005-09-06 Formfactor, Inc. Method for forming microelectronic spring structures on a substrate
US6780001B2 (en) 1999-07-30 2004-08-24 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold
US6888362B2 (en) 2000-11-09 2005-05-03 Formfactor, Inc. Test head assembly for electronic components with plurality of contoured microelectronic spring contacts
US7189077B1 (en) 1999-07-30 2007-03-13 Formfactor, Inc. Lithographic type microelectronic spring structures with improved contours
US6468098B1 (en) * 1999-08-17 2002-10-22 Formfactor, Inc. Electrical contactor especially wafer level contactor using fluid pressure
US7262611B2 (en) * 2000-03-17 2007-08-28 Formfactor, Inc. Apparatuses and methods for planarizing a semiconductor contactor
US7952373B2 (en) 2000-05-23 2011-05-31 Verigy (Singapore) Pte. Ltd. Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies
DE10143173A1 (de) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafersonde
US7396236B2 (en) 2001-03-16 2008-07-08 Formfactor, Inc. Wafer level interposer
US6729019B2 (en) 2001-07-11 2004-05-04 Formfactor, Inc. Method of manufacturing a probe card
JP2004534957A (ja) 2001-07-11 2004-11-18 フォームファクター，インコーポレイテッド プローブ・カードの製造方法
US7182672B2 (en) * 2001-08-02 2007-02-27 Sv Probe Pte. Ltd. Method of probe tip shaping and cleaning
AU2002327490A1 (en) 2001-08-21 2003-06-30 Cascade Microtech, Inc. Membrane probing system
US20030038356A1 (en) * 2001-08-24 2003-02-27 Derderian James M Semiconductor devices including stacking spacers thereon, assemblies including the semiconductor devices, and methods
US6714828B2 (en) 2001-09-17 2004-03-30 Formfactor, Inc. Method and system for designing a probe card
JP2003107105A (ja) * 2001-09-27 2003-04-09 Mitsubishi Electric Corp プローブカード
US6759311B2 (en) 2001-10-31 2004-07-06 Formfactor, Inc. Fan out of interconnect elements attached to semiconductor wafer
US20030150640A1 (en) * 2002-02-14 2003-08-14 Crippen Warren Stuart Silicon space transformer and method of manufacturing same
US20060053625A1 (en) * 2002-05-07 2006-03-16 Microfabrica Inc. Microprobe tips and methods for making
US20060051948A1 (en) * 2003-02-04 2006-03-09 Microfabrica Inc. Microprobe tips and methods for making
US7640651B2 (en) * 2003-12-31 2010-01-05 Microfabrica Inc. Fabrication process for co-fabricating multilayer probe array and a space transformer
US20050104609A1 (en) * 2003-02-04 2005-05-19 Microfabrica Inc. Microprobe tips and methods for making
US7265565B2 (en) 2003-02-04 2007-09-04 Microfabrica Inc. Cantilever microprobes for contacting electronic components and methods for making such probes
US20050184748A1 (en) * 2003-02-04 2005-08-25 Microfabrica Inc. Pin-type probes for contacting electronic circuits and methods for making such probes
US7363705B2 (en) * 2003-02-04 2008-04-29 Microfabrica, Inc. Method of making a contact
US7412767B2 (en) * 2003-02-04 2008-08-19 Microfabrica, Inc. Microprobe tips and methods for making
US7273812B2 (en) * 2002-05-07 2007-09-25 Microfabrica Inc. Microprobe tips and methods for making
US20060238209A1 (en) * 2002-05-07 2006-10-26 Microfabrica Inc. Vertical microprobes for contacting electronic components and method for making such probes
US20060006888A1 (en) * 2003-02-04 2006-01-12 Microfabrica Inc. Electrochemically fabricated microprobes
US7531077B2 (en) 2003-02-04 2009-05-12 Microfabrica Inc. Electrochemical fabrication process for forming multilayer multimaterial microprobe structures
US7694246B2 (en) * 2002-06-19 2010-04-06 Formfactor, Inc. Test method for yielding a known good die
US6867608B2 (en) 2002-07-16 2005-03-15 Aehr Test Systems Assembly for electrically connecting a test component to a testing machine for testing electrical circuits on the test component
JP3621938B2 (ja) 2002-08-09 2005-02-23 日本電子材料株式会社 プローブカード
US7567089B2 (en) * 2003-02-04 2009-07-28 Microfabrica Inc. Two-part microprobes for contacting electronic components and methods for making such probes
US10416192B2 (en) 2003-02-04 2019-09-17 Microfabrica Inc. Cantilever microprobes for contacting electronic components
US9244101B2 (en) * 2003-02-04 2016-01-26 University Of Southern California Electrochemical fabrication process for forming multilayer multimaterial microprobe structures
US8613846B2 (en) 2003-02-04 2013-12-24 Microfabrica Inc. Multi-layer, multi-material fabrication methods for producing micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties
US7170306B2 (en) * 2003-03-12 2007-01-30 Celerity Research, Inc. Connecting a probe card and an interposer using a compliant connector
US6924654B2 (en) * 2003-03-12 2005-08-02 Celerity Research, Inc. Structures for testing circuits and methods for fabricating the structures
US20040177995A1 (en) * 2003-03-12 2004-09-16 Nexcleon, Inc. Structures for testing circuits and methods for fabricating the structures
US6946859B2 (en) * 2003-03-12 2005-09-20 Celerity Research, Inc. Probe structures using clamped substrates with compliant interconnectors
US20040180561A1 (en) * 2003-03-12 2004-09-16 Nexcleon, Inc. Structures for testing circuits and methods for fabricating the structures
US6965245B2 (en) 2003-05-01 2005-11-15 K&S Interconnect, Inc. Prefabricated and attached interconnect structure
US9671429B2 (en) 2003-05-07 2017-06-06 University Of Southern California Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
JP2005010052A (ja) * 2003-06-19 2005-01-13 Japan Electronic Materials Corp プローブカード
GB2406973B (en) * 2003-10-08 2006-03-29 Wan-Chuan Chou Modular socket of integrated circuit
DE10355296B3 (de) * 2003-11-27 2005-06-09 Infineon Technologies Ag Testeinrichtung zum Wafertest von digitalen Halbleiterschaltungen
US7427868B2 (en) 2003-12-24 2008-09-23 Cascade Microtech, Inc. Active wafer probe
US20080108221A1 (en) * 2003-12-31 2008-05-08 Microfabrica Inc. Microprobe Tips and Methods for Making
US10641792B2 (en) 2003-12-31 2020-05-05 University Of Southern California Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties
US7071715B2 (en) * 2004-01-16 2006-07-04 Formfactor, Inc. Probe card configuration for low mechanical flexural strength electrical routing substrates
TW200525675A (en) 2004-01-20 2005-08-01 Tokyo Electron Ltd Probe guard
DE102004023987B4 (de) * 2004-05-14 2008-06-19 Feinmetall Gmbh Elektrische Prüfeinrichtung
US9097740B2 (en) 2004-05-21 2015-08-04 Formfactor, Inc. Layered probes with core
US8988091B2 (en) 2004-05-21 2015-03-24 Microprobe, Inc. Multiple contact probes
USRE43503E1 (en) 2006-06-29 2012-07-10 Microprobe, Inc. Probe skates for electrical testing of convex pad topologies
US7759949B2 (en) 2004-05-21 2010-07-20 Microprobe, Inc. Probes with self-cleaning blunt skates for contacting conductive pads
US9476911B2 (en) 2004-05-21 2016-10-25 Microprobe, Inc. Probes with high current carrying capability and laser machining methods
DE102004027887B4 (de) * 2004-05-28 2010-07-29 Feinmetall Gmbh Prüfeinrichtung zur elektrischen Prüfung eines Prüflings
DE102004027886A1 (de) * 2004-05-28 2005-12-22 Feinmetall Gmbh Prüfeinrichtung zur elektrischen Prüfung eines Prüflings sowie Verfahren zur Herstellung einer Prüfeinrichtung
US7084651B2 (en) * 2004-07-28 2006-08-01 International Business Machines Corporation Probe card assembly
EP1774583A2 (en) * 2004-07-28 2007-04-18 Sv Probe Pte Ltd. Method and apparatus for producing co-planar bonding pads on a substrate
US7385411B2 (en) * 2004-08-31 2008-06-10 Formfactor, Inc. Method of designing a probe card apparatus with desired compliance characteristics
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
CN100360943C (zh) * 2004-11-29 2008-01-09 华硕电脑股份有限公司 具有防止压力过大的测试装置
US7129730B2 (en) * 2004-12-15 2006-10-31 Chipmos Technologies (Bermuda) Ltd. Probe card assembly
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
WO2006104886A2 (en) * 2005-03-28 2006-10-05 Texas Instruments Incorporated Resilient probes for electrical testing
JP4472593B2 (ja) * 2005-07-12 2010-06-02 東京エレクトロン株式会社 プローブカード
JP4642603B2 (ja) * 2005-08-25 2011-03-02 東京エレクトロン株式会社 プローブカード
KR100546831B1 (ko) * 2005-08-31 2006-01-25 (주) 마이크로프랜드 프로브 카드의 탐침팁 공정 방법
US7649367B2 (en) 2005-12-07 2010-01-19 Microprobe, Inc. Low profile probe having improved mechanical scrub and reduced contact inductance
US7312617B2 (en) * 2006-03-20 2007-12-25 Microprobe, Inc. Space transformers employing wire bonds for interconnections with fine pitch contacts
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US8907689B2 (en) 2006-10-11 2014-12-09 Microprobe, Inc. Probe retention arrangement
US20080170712A1 (en) * 2007-01-16 2008-07-17 Phonic Ear Inc. Sound amplification system
US7764076B2 (en) * 2007-02-20 2010-07-27 Centipede Systems, Inc. Method and apparatus for aligning and/or leveling a test head
KR101029697B1 (ko) * 2007-03-20 2011-04-18 가부시키가이샤 니혼 마이크로닉스 전기적 접속장치
US7514948B2 (en) 2007-04-10 2009-04-07 Microprobe, Inc. Vertical probe array arranged to provide space transformation
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
US8723546B2 (en) 2007-10-19 2014-05-13 Microprobe, Inc. Vertical guided layered probe
US8033012B2 (en) * 2008-03-07 2011-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating a semiconductor test probe card space transformer
US20100066395A1 (en) * 2008-03-13 2010-03-18 Johnson Morgan T Wafer Prober Integrated With Full-Wafer Contacter
JP5088197B2 (ja) * 2008-03-25 2012-12-05 日本電気株式会社 電子回路基板の電源雑音抑制に関する設計妥当性検証装置と方法並びにプログラム
US8230593B2 (en) 2008-05-29 2012-07-31 Microprobe, Inc. Probe bonding method having improved control of bonding material
JP4862017B2 (ja) 2008-07-10 2012-01-25 ルネサスエレクトロニクス株式会社 中継基板、その製造方法、プローブカード
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
KR101493871B1 (ko) * 2008-11-11 2015-02-17 삼성전자주식회사 웨이퍼 검사장치의 인터페이스 구조
US8410806B2 (en) 2008-11-21 2013-04-02 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
CN101807619B (zh) * 2010-03-19 2012-02-01 河南大学 一种透明柔性紫外探测器及其制备方法
US8154119B2 (en) 2010-03-31 2012-04-10 Toyota Motor Engineering & Manufacturing North America, Inc. Compliant spring interposer for wafer level three dimensional (3D) integration and method of manufacturing
US8878560B2 (en) 2010-12-30 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. High frequency probing structure
US8803001B2 (en) 2011-06-21 2014-08-12 Toyota Motor Engineering & Manufacturing North America, Inc. Bonding area design for transient liquid phase bonding process
JP2013101043A (ja) * 2011-11-08 2013-05-23 Renesas Electronics Corp 半導体装置の製造方法
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding
US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
TWI454710B (zh) * 2012-09-19 2014-10-01 Mpi Corp Probe card and its manufacturing method
US9594113B2 (en) * 2014-02-21 2017-03-14 Sensata Technologies, Inc. Package on package thermal forcing device
US9797928B2 (en) 2014-09-15 2017-10-24 International Business Machines Corporation Probe card assembly
US10120020B2 (en) 2016-06-16 2018-11-06 Formfactor Beaverton, Inc. Probe head assemblies and probe systems for testing integrated circuit devices
US10802071B2 (en) 2017-12-01 2020-10-13 International Business Machines Corporation Elemental mercury-containing probe card
KR102581387B1 (ko) * 2018-09-11 2023-09-21 삼성전자주식회사 프로브 및 이를 포함하는 프로브 카드
US11262383B1 (en) 2018-09-26 2022-03-01 Microfabrica Inc. Probes having improved mechanical and/or electrical properties for making contact between electronic circuit elements and methods for making
CN111312667B (zh) * 2019-09-20 2023-04-18 天津大学 带导电通孔偏移结构的半导体器件、供电结构和电子设备
US20220349937A1 (en) * 2021-04-30 2022-11-03 Xcerra Corporation Calibration System

Family Cites Families (143)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967216A (en) 1960-03-08 1961-01-03 Henry S Zablocki Contact making assembly
US3835530A (en) 1967-06-05 1974-09-17 Texas Instruments Inc Method of making semiconductor devices
US3826984A (en) 1969-02-28 1974-07-30 Licentia Gmbh Measuring device for the dynamic measurement of semiconductor parameters and method of making such a device
US3676776A (en) 1970-01-19 1972-07-11 Siemens Ag Testing probe construction
US3654585A (en) 1970-03-11 1972-04-04 Brooks Research And Mfg Inc Coordinate conversion for the testing of printed circuit boards
US3663920A (en) 1970-07-27 1972-05-16 Burndy Corp Mounting for integrated circuits
US3832632A (en) 1971-11-22 1974-08-27 F Ardezzone Multi-point probe head assembly
US3771110A (en) 1971-11-23 1973-11-06 Walton Prod Inc Electrical contact pins
US3714384A (en) 1971-11-24 1973-01-30 Exxon Production Research Co Subsea electric connector system and procedure for use
CA948705A (en) 1972-07-28 1974-06-04 Robert C. Cook Method for making an integrated circuit apparatus
US3842189A (en) 1973-01-08 1974-10-15 Rca Corp Contact array and method of making the same
US4032058A (en) 1973-06-29 1977-06-28 Ibm Corporation Beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leads
US3891924A (en) 1973-09-10 1975-06-24 Probe Rite Inc Adjustable multi-point probe head assembly
US3939414A (en) 1974-01-28 1976-02-17 Electroglas, Inc. Micro-circuit test apparatus
US4038599A (en) 1974-12-30 1977-07-26 International Business Machines Corporation High density wafer contacting and test system
US3994552A (en) 1975-10-01 1976-11-30 International Telephone And Telegraph Corporation Submersible pipe electrical cable assembly
US4085502A (en) 1977-04-12 1978-04-25 Advanced Circuit Technology, Inc. Jumper cable
US4307928A (en) 1979-08-17 1981-12-29 Petlock Jr William Bellows-type electrical test contact
US4281449A (en) 1979-12-21 1981-08-04 Harris Corporation Method for qualifying biased burn-in integrated circuits on a wafer level
US4338621A (en) 1980-02-04 1982-07-06 Burroughs Corporation Hermetic integrated circuit package for high density high power applications
US4523144A (en) 1980-05-27 1985-06-11 Japan Electronic Materials Corp. Complex probe card for testing a semiconductor wafer
US4358175A (en) 1980-11-03 1982-11-09 Burroughs Corporation Connector for pin type integrated circuit packages
US4466184A (en) 1981-04-21 1984-08-21 General Dynamics, Pomona Division Method of making pressure point contact system
US4623839A (en) 1982-09-17 1986-11-18 Angliatech Limited Probe device for testing an integrated circuit
JPS59205105A (ja) 1983-05-07 1984-11-20 住友電気工業株式会社 導電性複合材料
US4567432A (en) 1983-06-09 1986-01-28 Texas Instruments Incorporated Apparatus for testing integrated circuits
US4553192A (en) 1983-08-25 1985-11-12 International Business Machines Corporation High density planar interconnected integrated circuit package
US4615573A (en) 1983-10-28 1986-10-07 Honeywell Inc. Spring finger interconnect for IC chip carrier
US4548451A (en) 1984-04-27 1985-10-22 International Business Machines Corporation Pinless connector interposer and method for making the same
US4593958A (en) 1984-05-04 1986-06-10 Kabushiki Kaisha Toshiba Socket for baseless lamp
FR2565737B3 (fr) 1984-06-12 1986-09-19 Feinmetall Gmbh Element de contact pour adaptateur de controle pour effectuer des controles electriques de pieces a controler notamment de circuits imprimes
DK291184D0 (da) 1984-06-13 1984-06-13 Boeegh Petersen Allan Fremgangsmaade og indretning til test af kredsloebsplader
US4616404A (en) 1984-11-30 1986-10-14 Advanced Micro Devices, Inc. Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US6330164B1 (en) 1985-10-18 2001-12-11 Formfactor, Inc. Interconnect assemblies and methods including ancillary electronic component connected in immediate proximity of semiconductor device
US4866504A (en) 1986-05-05 1989-09-12 Itt Corporation Direct interconnection for use between a semiconductor and a pin connector or the like
EP0247219B1 (en) 1986-05-27 1991-05-15 International Business Machines Corporation Direct access storage unit
EP0256541A3 (de) 1986-08-19 1990-03-14 Feinmetall Gesellschaft mit beschrÀ¤nkter Haftung Kontaktiervorrichtung
US4955523A (en) 1986-12-17 1990-09-11 Raychem Corporation Interconnection of electronic components
US5189507A (en) 1986-12-17 1993-02-23 Raychem Corporation Interconnection of electronic components
JP2533511B2 (ja) 1987-01-19 1996-09-11 株式会社日立製作所 電子部品の接続構造とその製造方法
US4795977A (en) 1987-03-19 1989-01-03 Pacific Western Systems, Inc. Interface system for interfacing a device tester to a device under test
US4947481A (en) 1987-05-09 1990-08-07 Pioneer Electronic Corporation Information reader for disk player
US4983907A (en) 1987-05-14 1991-01-08 Intel Corporation Driven guard probe card
JPH01152271A (ja) 1987-12-09 1989-06-14 Toshiba Corp スパッタ装置
EP0332560B1 (en) 1988-03-11 1994-03-02 International Business Machines Corporation Elastomeric connectors for electronic packaging and testing
US4924589A (en) 1988-05-16 1990-05-15 Leedy Glenn J Method of making and testing an integrated circuit
US5103557A (en) 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
JPH01313969A (ja) 1988-06-13 1989-12-19 Hitachi Ltd 半導体装置
JPH0254814A (ja) 1988-08-17 1990-02-23 Sharp Corp コンタクトピン
DE3838413A1 (de) 1988-11-12 1990-05-17 Mania Gmbh Adapter fuer elektronische pruefvorrichtungen fuer leiterplatten und dergl.
DE69022605T2 (de) 1989-02-28 1996-03-21 Fujitsu Ltd Elektrische Verbindungsvorrichtung.
JPH02237047A (ja) 1989-03-09 1990-09-19 Mitsubishi Electric Corp 半導体試験装置
JPH0664086B2 (ja) 1989-08-02 1994-08-22 武田産業株式会社 プローブカード
US4965865A (en) 1989-10-11 1990-10-23 General Signal Corporation Probe card for integrated circuit chip
US5399982A (en) 1989-11-13 1995-03-21 Mania Gmbh & Co. Printed circuit board testing device with foil adapter
US5160779A (en) 1989-11-30 1992-11-03 Hoya Corporation Microprobe provided circuit substrate and method for producing the same
US4969826A (en) 1989-12-06 1990-11-13 Amp Incorporated High density connector for an IC chip carrier
US5379515A (en) 1989-12-11 1995-01-10 Canon Kabushiki Kaisha Process for preparing electrical connecting member
US5471151A (en) 1990-02-14 1995-11-28 Particle Interconnect, Inc. Electrical interconnect using particle enhanced joining of metal surfaces
US5245751A (en) 1990-04-27 1993-09-21 Circuit Components, Incorporated Array connector
US5071359A (en) 1990-04-27 1991-12-10 Rogers Corporation Array connector
US5070297A (en) 1990-06-04 1991-12-03 Texas Instruments Incorporated Full wafer integrated circuit testing device
US5130779A (en) 1990-06-19 1992-07-14 International Business Machines Corporation Solder mass having conductive encapsulating arrangement
JP2928592B2 (ja) 1990-06-20 1999-08-03 株式会社日立製作所 半導体ｌｓｉ検査装置用プローブヘッドの製造方法および検査装置
US5187020A (en) 1990-07-31 1993-02-16 Texas Instruments Incorporated Compliant contact pad
US5090118A (en) 1990-07-31 1992-02-25 Texas Instruments Incorporated High performance test head and method of making
US5521518A (en) 1990-09-20 1996-05-28 Higgins; H. Dan Probe card apparatus
US5072520A (en) 1990-10-23 1991-12-17 Rogers Corporation Method of manufacturing an interconnect device having coplanar contact bumps
US5148103A (en) 1990-10-31 1992-09-15 Hughes Aircraft Company Apparatus for testing integrated circuits
JPH04294559A (ja) 1991-03-22 1992-10-19 Tokyo Electron Ltd プローブカード
US5686317A (en) 1991-06-04 1997-11-11 Micron Technology, Inc. Method for forming an interconnect having a penetration limited contact structure for establishing a temporary electrical connection with a semiconductor die
JPH04357848A (ja) 1991-06-04 1992-12-10 Mitsubishi Electric Corp 半導体ウエハ用プローバ
FR2677772B1 (fr) 1991-06-11 1993-10-08 Sgs Thomson Microelectronics Sa Carte a pointes pour testeur de puces de circuit integre.
JPH0529406A (ja) 1991-07-18 1993-02-05 Mitsubishi Electric Corp 半導体検査装置
US5177438A (en) 1991-08-02 1993-01-05 Motorola, Inc. Low resistance probe for semiconductor
US5264787A (en) * 1991-08-30 1993-11-23 Hughes Aircraft Company Rigid-flex circuits with raised features as IC test probes
US5177439A (en) 1991-08-30 1993-01-05 U.S. Philips Corporation Probe card for testing unencapsulated semiconductor devices
US5139427A (en) 1991-09-23 1992-08-18 Amp Incorporated Planar array connector and flexible contact therefor
EP0678232B1 (en) 1991-09-30 1997-10-29 Ceridian Corporation Plated compliant lead
US5152695A (en) 1991-10-10 1992-10-06 Amp Incorporated Surface mount electrical connector
KR100196195B1 (ko) 1991-11-18 1999-06-15 이노우에 쥰이치 프로우브 카드
US5221895A (en) 1991-12-23 1993-06-22 Tektronix, Inc. Probe with microstrip transmission lines
US5210939A (en) 1992-04-17 1993-05-18 Intel Corporation Lead grid array integrated circuit
US5228861A (en) 1992-06-12 1993-07-20 Amp Incorporated High density electrical connector system
US5237743A (en) 1992-06-19 1993-08-24 International Business Machines Corporation Method of forming a conductive end portion on a flexible circuit member
JPH0650990A (ja) 1992-07-30 1994-02-25 Nec Corp プローブカード
US5371654A (en) 1992-10-19 1994-12-06 International Business Machines Corporation Three dimensional high performance interconnection package
US5354712A (en) 1992-11-12 1994-10-11 Northern Telecom Limited Method for forming interconnect structures for integrated circuits
JPH06151532A (ja) 1992-11-13 1994-05-31 Tokyo Electron Yamanashi Kk プローブ装置
US5308797A (en) 1992-11-24 1994-05-03 Texas Instruments Incorporated Leads for semiconductor chip assembly and method
KR960004089B1 (ko) 1992-12-30 1996-03-26 현대전자산업주식회사 반도체소자의 저저항 접촉형성방법
JPH06241777A (ja) 1993-02-16 1994-09-02 Mitsubishi Electric Corp 原子間力顕微鏡用カンチレバー、その製造方法、このカンチレバーを用いた原子間力顕微鏡及びこのカンチレバーを用いた試料表面密着性評価方法
JP3185452B2 (ja) 1993-02-25 2001-07-09 ジェイエスアール株式会社 回路基板検査用アダプター装置の製造方法、並びに回路基板検査用アダプター装置、これを用いた回路基板検査方法および装置
EP0615131A1 (en) 1993-03-10 1994-09-14 Co-Operative Facility For Aging Tester Development Prober for semiconductor integrated circuit element wafer
JP3345948B2 (ja) 1993-03-16 2002-11-18 ジェイエスアール株式会社 プローブヘッドの製造方法
JPH0792479B2 (ja) 1993-03-18 1995-10-09 東京エレクトロン株式会社 プローブ装置の平行度調整方法
DE4310349C2 (de) 1993-03-30 2000-11-16 Inst Mikrotechnik Mainz Gmbh Sensorkopf und Verfahren zu seiner Herstellung
FR2703839B1 (fr) 1993-04-09 1995-07-07 Framatome Connectors France Connecteur intermédiaire entre carte de circuit imprimé et substrat à circuits électroniques.
US5395253A (en) 1993-04-29 1995-03-07 Hughes Aircraft Company Membrane connector with stretch induced micro scrub
JPH0782027B2 (ja) 1993-04-30 1995-09-06 フレッシュクエストコーポレーション テスト用コンタクトピンの製造方法
GB2279805B (en) 1993-07-02 1997-09-17 Plessey Semiconductors Ltd Bare die testing
US5483741A (en) 1993-09-03 1996-01-16 Micron Technology, Inc. Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice
US5475318A (en) 1993-10-29 1995-12-12 Robert B. Marcus Microprobe
US6029344A (en) 1993-11-16 2000-02-29 Formfactor, Inc. Composite interconnection element for microelectronic components, and method of making same
US5974662A (en) 1993-11-16 1999-11-02 Formfactor, Inc. Method of planarizing tips of probe elements of a probe card assembly
US6064213A (en) 1993-11-16 2000-05-16 Formfactor, Inc. Wafer-level burn-in and test
US5806181A (en) 1993-11-16 1998-09-15 Formfactor, Inc. Contact carriers (tiles) for populating larger substrates with spring contacts
US6184053B1 (en) 1993-11-16 2001-02-06 Formfactor, Inc. Method of making microelectronic spring contact elements
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US5455390A (en) 1994-02-01 1995-10-03 Tessera, Inc. Microelectronics unit mounting with multiple lead bonding
US5666190A (en) 1994-04-12 1997-09-09 The Board Of Trustees Of The Leland Stanford, Jr. University Method of performing lithography using cantilever array
US5546012A (en) 1994-04-15 1996-08-13 International Business Machines Corporation Probe card assembly having a ceramic probe card
US5534784A (en) * 1994-05-02 1996-07-09 Motorola, Inc. Method for probing a semiconductor wafer
US5632631A (en) 1994-06-07 1997-05-27 Tessera, Inc. Microelectronic contacts with asperities and methods of making same
US5491426A (en) 1994-06-30 1996-02-13 Vlsi Technology, Inc. Adaptable wafer probe assembly for testing ICs with different power/ground bond pad configurations
US5513430A (en) 1994-08-19 1996-05-07 Motorola, Inc. Method for manufacturing a probe
US5476818A (en) 1994-08-19 1995-12-19 Motorola, Inc. Semiconductor structure and method of manufacture
EP1408337A3 (en) 1994-11-15 2007-09-19 FormFactor, Inc. Probe card assembly
DE19507127A1 (de) 1995-03-01 1996-09-12 Test Plus Electronic Gmbh Adaptersystem für Baugruppen-Platinen, zu verwenden in einer Prüfeinrichtung
US6133744A (en) 1995-04-28 2000-10-17 Nec Corporation Apparatus for testing semiconductor wafer
US5701085A (en) 1995-07-05 1997-12-23 Sun Microsystems, Inc. Apparatus for testing flip chip or wire bond integrated circuits
US5686842A (en) 1995-08-31 1997-11-11 Nat Semiconductor Corp Known good die test apparatus and method
US6046597A (en) 1995-10-04 2000-04-04 Oz Technologies, Inc. Test socket for an IC device
JP3099873B2 (ja) 1996-12-05 2000-10-16 日本電産リード株式会社 プリント基板検査装置およびユニバーサル型プリント基板検査装置の使用方法
US6166552A (en) 1996-06-10 2000-12-26 Motorola Inc. Method and apparatus for testing a semiconductor wafer
US5828226A (en) 1996-11-06 1998-10-27 Cerprobe Corporation Probe card assembly for high density integrated circuits
NL1004510C2 (nl) 1996-11-12 1998-05-14 Charmant Beheer B V Werkwijze voor het vervaardigen van een test-adapter alsmede test-adapter en een werkwijze voor het testen van printplaten.
US6037786A (en) 1996-12-13 2000-03-14 International Business Machines Corporation Testing integrated circuit chips
DE19654404A1 (de) 1996-12-24 1998-06-25 Hewlett Packard Co Adaptationsvorrichtung zum elektrischen Test von Leiterplatten
JP3080595B2 (ja) 1997-02-28 2000-08-28 日本電産リード株式会社 基板検査装置および基板検査方法
US6016060A (en) 1997-03-25 2000-01-18 Micron Technology, Inc. Method, apparatus and system for testing bumped semiconductor components
US6014032A (en) 1997-09-30 2000-01-11 International Business Machines Corporation Micro probe ring assembly and method of fabrication
JPH11125646A (ja) 1997-10-21 1999-05-11 Mitsubishi Electric Corp 垂直針型プローブカード、その製造方法およびその不良プローブ針の交換方法
JPH11125645A (ja) 1997-10-21 1999-05-11 Mitsubishi Electric Corp 垂直針型プローブカードおよびその製造方法
ATE260470T1 (de) 1997-11-05 2004-03-15 Feinmetall Gmbh Prüfkopf für mikrostrukturen mit schnittstelle
US6043668A (en) 1997-12-12 2000-03-28 Sony Corporation Planarity verification system for integrated circuit test probes
US6181144B1 (en) 1998-02-25 2001-01-30 Micron Technology, Inc. Semiconductor probe card having resistance measuring circuitry and method fabrication
US6107812A (en) 1998-03-05 2000-08-22 International Business Machines Corporation Apparatus and method for testing integrated circuit components of a multi-component card
US6160412A (en) 1998-11-05 2000-12-12 Wentworth Laboratories, Inc. Impedance-matched interconnection device for connecting a vertical-pin integrated circuit probing device to integrated circuit test equipment
US6177805B1 (en) 1998-11-24 2001-01-23 International Business Machines Corporation High density test connector for disk drives in a high volume manufacturing environment
US6081429A (en) 1999-01-20 2000-06-27 Micron Technology, Inc. Test interposer for use with ball grid array packages assemblies and ball grid array packages including same and methods
US6188286B1 (en) 1999-03-30 2001-02-13 Infineon Technologies North America Corp. Method and system for synchronizing multiple subsystems using one voltage-controlled oscillator

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KR100430208B1 (ko) 2004-05-03
TW589462B (en) 2004-06-01
DE69908639D1 (de) 2003-07-10
US6937037B2 (en) 2005-08-30
DE69936470T2 (de) 2008-03-06
JP2002531836A (ja) 2002-09-24
CN1201161C (zh) 2005-05-11
WO2000033096A1 (en) 2000-06-08
CN1702470A (zh) 2005-11-30
EP1326079A3 (en) 2004-05-19
DE69936470D1 (de) 2007-08-16
JP3727540B2 (ja) 2005-12-14
EP1135693B1 (en) 2003-06-04
DE69908639T2 (de) 2004-05-13
EP1326079B1 (en) 2007-07-04
CN1328644A (zh) 2001-12-26
EP1326079A2 (en) 2003-07-09
EP1135693A1 (en) 2001-09-26
US20030038647A1 (en) 2003-02-27
AU1933700A (en) 2000-06-19
US6483328B1 (en) 2002-11-19
KR20010086060A (ko) 2001-09-07

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