CN100538896C - 编程和禁止多电平非易失性存储单元的方法及系统 - Google Patents
编程和禁止多电平非易失性存储单元的方法及系统 Download PDFInfo
- Publication number
- CN100538896C CN100538896C CNB028281756A CN02828175A CN100538896C CN 100538896 C CN100538896 C CN 100538896C CN B028281756 A CNB028281756 A CN B028281756A CN 02828175 A CN02828175 A CN 02828175A CN 100538896 C CN100538896 C CN 100538896C
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- 238000003860 storage Methods 0.000 title claims abstract description 451
- 238000000034 method Methods 0.000 title claims abstract description 121
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000003039 volatile agent Substances 0.000 title abstract description 6
- 230000015654 memory Effects 0.000 claims abstract description 71
- 238000012795 verification Methods 0.000 claims description 39
- 238000007667 floating Methods 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 238000004321 preservation Methods 0.000 description 36
- 210000004027 cell Anatomy 0.000 description 33
- 238000009826 distribution Methods 0.000 description 31
- 230000008569 process Effects 0.000 description 11
- 238000012546 transfer Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
Abstract
Description
Claims (45)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/025,749 US6967872B2 (en) | 2001-12-18 | 2001-12-18 | Method and system for programming and inhibiting multi-level, non-volatile memory cells |
US10/025,749 | 2001-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1620702A CN1620702A (zh) | 2005-05-25 |
CN100538896C true CN100538896C (zh) | 2009-09-09 |
Family
ID=21827852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028281756A Expired - Fee Related CN100538896C (zh) | 2001-12-18 | 2002-11-26 | 编程和禁止多电平非易失性存储单元的方法及系统 |
Country Status (8)
Country | Link |
---|---|
US (3) | US6967872B2 (zh) |
EP (1) | EP1456852B1 (zh) |
JP (1) | JP4477352B2 (zh) |
KR (1) | KR100932891B1 (zh) |
CN (1) | CN100538896C (zh) |
AT (1) | ATE524811T1 (zh) |
AU (1) | AU2002359496A1 (zh) |
WO (1) | WO2003052766A1 (zh) |
Families Citing this family (80)
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-
2001
- 2001-12-18 US US10/025,749 patent/US6967872B2/en not_active Expired - Lifetime
-
2002
- 2002-11-26 AU AU2002359496A patent/AU2002359496A1/en not_active Abandoned
- 2002-11-26 KR KR1020047009586A patent/KR100932891B1/ko not_active IP Right Cessation
- 2002-11-26 JP JP2003553575A patent/JP4477352B2/ja not_active Expired - Fee Related
- 2002-11-26 CN CNB028281756A patent/CN100538896C/zh not_active Expired - Fee Related
- 2002-11-26 WO PCT/US2002/037972 patent/WO2003052766A1/en active Application Filing
- 2002-11-26 EP EP02794038A patent/EP1456852B1/en not_active Expired - Lifetime
- 2002-11-26 AT AT02794038T patent/ATE524811T1/de not_active IP Right Cessation
-
2004
- 2004-03-24 US US10/809,571 patent/US6944068B2/en not_active Expired - Lifetime
-
2005
- 2005-09-09 US US11/223,709 patent/US7095654B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2005513699A (ja) | 2005-05-12 |
JP4477352B2 (ja) | 2010-06-09 |
AU2002359496A1 (en) | 2003-06-30 |
US20040179404A1 (en) | 2004-09-16 |
EP1456852A4 (en) | 2005-12-21 |
EP1456852B1 (en) | 2011-09-14 |
KR100932891B1 (ko) | 2009-12-21 |
US20060007736A1 (en) | 2006-01-12 |
US20030112663A1 (en) | 2003-06-19 |
EP1456852A1 (en) | 2004-09-15 |
WO2003052766A1 (en) | 2003-06-26 |
CN1620702A (zh) | 2005-05-25 |
ATE524811T1 (de) | 2011-09-15 |
KR20040085140A (ko) | 2004-10-07 |
US7095654B2 (en) | 2006-08-22 |
US6967872B2 (en) | 2005-11-22 |
US6944068B2 (en) | 2005-09-13 |
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