CN100538896C - 编程和禁止多电平非易失性存储单元的方法及系统 - Google Patents
编程和禁止多电平非易失性存储单元的方法及系统 Download PDFInfo
- Publication number
- CN100538896C CN100538896C CNB028281756A CN02828175A CN100538896C CN 100538896 C CN100538896 C CN 100538896C CN B028281756 A CNB028281756 A CN B028281756A CN 02828175 A CN02828175 A CN 02828175A CN 100538896 C CN100538896 C CN 100538896C
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- 238000003860 storage Methods 0.000 title claims abstract description 451
- 238000000034 method Methods 0.000 title claims abstract description 121
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000003039 volatile agent Substances 0.000 title abstract description 6
- 230000015654 memory Effects 0.000 claims abstract description 71
- 238000012795 verification Methods 0.000 claims description 39
- 238000007667 floating Methods 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 238000004321 preservation Methods 0.000 description 36
- 210000004027 cell Anatomy 0.000 description 33
- 238000009826 distribution Methods 0.000 description 31
- 230000008569 process Effects 0.000 description 11
- 238000012546 transfer Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (45)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/025,749 | 2001-12-18 | ||
US10/025,749 US6967872B2 (en) | 2001-12-18 | 2001-12-18 | Method and system for programming and inhibiting multi-level, non-volatile memory cells |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1620702A CN1620702A (zh) | 2005-05-25 |
CN100538896C true CN100538896C (zh) | 2009-09-09 |
Family
ID=21827852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028281756A Expired - Fee Related CN100538896C (zh) | 2001-12-18 | 2002-11-26 | 编程和禁止多电平非易失性存储单元的方法及系统 |
Country Status (8)
Country | Link |
---|---|
US (3) | US6967872B2 (zh) |
EP (1) | EP1456852B1 (zh) |
JP (1) | JP4477352B2 (zh) |
KR (1) | KR100932891B1 (zh) |
CN (1) | CN100538896C (zh) |
AT (1) | ATE524811T1 (zh) |
AU (1) | AU2002359496A1 (zh) |
WO (1) | WO2003052766A1 (zh) |
Families Citing this family (81)
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2001
- 2001-12-18 US US10/025,749 patent/US6967872B2/en not_active Expired - Lifetime
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2002
- 2002-11-26 CN CNB028281756A patent/CN100538896C/zh not_active Expired - Fee Related
- 2002-11-26 AU AU2002359496A patent/AU2002359496A1/en not_active Abandoned
- 2002-11-26 KR KR1020047009586A patent/KR100932891B1/ko not_active IP Right Cessation
- 2002-11-26 JP JP2003553575A patent/JP4477352B2/ja not_active Expired - Fee Related
- 2002-11-26 AT AT02794038T patent/ATE524811T1/de not_active IP Right Cessation
- 2002-11-26 WO PCT/US2002/037972 patent/WO2003052766A1/en active Application Filing
- 2002-11-26 EP EP02794038A patent/EP1456852B1/en not_active Expired - Lifetime
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2004
- 2004-03-24 US US10/809,571 patent/US6944068B2/en not_active Expired - Lifetime
-
2005
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US7095654B2 (en) | 2006-08-22 |
US20030112663A1 (en) | 2003-06-19 |
US6944068B2 (en) | 2005-09-13 |
EP1456852B1 (en) | 2011-09-14 |
WO2003052766A1 (en) | 2003-06-26 |
US20040179404A1 (en) | 2004-09-16 |
CN1620702A (zh) | 2005-05-25 |
US20060007736A1 (en) | 2006-01-12 |
KR20040085140A (ko) | 2004-10-07 |
JP4477352B2 (ja) | 2010-06-09 |
EP1456852A4 (en) | 2005-12-21 |
KR100932891B1 (ko) | 2009-12-21 |
AU2002359496A1 (en) | 2003-06-30 |
ATE524811T1 (de) | 2011-09-15 |
JP2005513699A (ja) | 2005-05-12 |
EP1456852A1 (en) | 2004-09-15 |
US6967872B2 (en) | 2005-11-22 |
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