CN100541331C - Adopt the image interference photoetching method and the etching system thereof of gating shutter and Dove prism - Google Patents
Adopt the image interference photoetching method and the etching system thereof of gating shutter and Dove prism Download PDFInfo
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- CN100541331C CN100541331C CNB2004100094058A CN200410009405A CN100541331C CN 100541331 C CN100541331 C CN 100541331C CN B2004100094058 A CNB2004100094058 A CN B2004100094058A CN 200410009405 A CN200410009405 A CN 200410009405A CN 100541331 C CN100541331 C CN 100541331C
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- shutter
- dove prism
- exposure
- gating
- biasing
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Abstract
Adopt the image interference photoetching method and the system of gating shutter and Dove prism, it is characterized in that adopting gating shutter and Dove prism device to provide vertical direction illumination, directions X biasing and Y direction biasing illumination, realize three exposures of image interference photoetching for three times exposure image interference photoetchings.The present invention does not have any moving-member; reduce vibration effect; do not need to rotate mask or resist substrate yet; do not have the aligning difficult problem between the exposure image three times, historical facts or anecdotes is now easier, and saving trouble saves time; and can be by the shutter opening time control exposure of selecting each time exposure and the relative exposure ratio of controlling three exposures; optimize the exposure spectral characteristic, improve contrast and resolution, improve the anti-aliasing degree.Realize three exposures of image interference photoetching.
Description
Technical field
The present invention relates to a kind of image interference photoetching method and etching system thereof that adopts gating shutter and Dove prism, belong to improvement the imaging Interferometric Lithography that produces Micropicture.
Background technology
Imaging Interferometric Lithography is a kind of new photoetching technique that development in recent years is got up, and general image interference etching system is made up of laser instrument, beam-expanding collimation device, beam splitter, catoptron, mask and imaging device etc., all is to adopt three exposure methods in principle.Document Steven R.J.Brueck, ImagingInterferometric Lithography, Microlithography Worid, Winter 1998,2-11 and document Xiaolan Chen and S.R.J.Brueck, Imaging Interferometric Lithography:AWavelength Division Multiplex Approach to Extending Optical Lithography, J.Vac.Sci.Technol, B16 (6): 3392-3397, Nov./Dec., introduced imaging Interferometric Lithography in 1998.But only touch upon in the document general method and simple principle are not discussed the enforcement and the optimization method of image interference etching system.Method in the document is to adopt the light path adjustment between three exposures, makes the pattern alignment difficulty, and picture element descends, and exposure efficiency is low.
Summary of the invention
The technical issues that need to address of the present invention are: overcome the deficiencies in the prior art; a kind of image interference photoetching method and etching system thereof that adopts gating shutter and Dove prism is provided; only need to select the shutter of particular location successively and open shutter by the fast gate control power supply of gating; and the effect of the Dove prism by thereafter just can make things convenient for; fast finish three times required exposures of image interference photoetching; in three exposure process; do not need to readjust light path to adapt to different exposures; there is not any moving-member; reduce vibration effect; do not need to rotate mask or resist substrate yet; there is not the aligning difficult problem between the exposure image three times; historical facts or anecdotes is now easier; save trouble and save time; and can be by the shutter opening time control exposure of selecting each time exposure and the relative exposure ratio of controlling three exposures; optimize the exposure spectral characteristic, improve contrast and resolution, improve the anti-aliasing degree.
Technical solution of the present invention is: adopt the image interference photoetching method of gating shutter and Dove prism, its characteristics are to comprise the following steps:
(1) gating shutter and Dove prism thereafter are positioned between beam-expanding collimation device and the mask, make 5 electronic shutters forming the gating shutter corresponding one by one with 5 faces that are used to expose of Dove prism;
(2) when needs vertical illumination mask, only need be with a shutter opening of centre corresponding in the electronic shutter with the Dove prism end face, make the vertically end face by Dove prism of light beam, thereby realize the exposure of vertical illumination mask;
(3) when needs directions X biasing illuminating exposure, only need with in all the other 4 electronic shutters with two corresponding relative inclined-planes of Dove prism in an inclined-plane in the middle of a shutter opening, make light beam vertically by realizing directions X biasing illuminating exposure behind the inclined-plane in two relative inclined-planes of Dove prism;
(4) when needs Y direction biasing illuminating exposure, only need with in all the other 4 electronic shutters with another of Dove prism to a corresponding shutter opening in the relative inclined-plane, make light beam vertically realize Y direction biasing illuminating exposure after to an inclined-plane in the relative inclined-plane by another of Dove prism;
Promptly finish image interference photoetching by above three exposures.
Principle of the present invention is: owing to adopt Dove prism, shutter placed in the middle in the corresponding gating shutter of its end face is used for vertical exposure, and two pairs of inclined-planes of prism then are respectively applied for directions X and Y direction biasing exposure.Four inclined-planes of Dove prism are identical with the angle of cut of bottom surface, and according to the angle of eccentricity size design inclined-plane of biasing illumination and the angle of cut of bottom surface, and the size of angle of eccentricity is determined by the spatial frequency of mask graph and the factors such as bore of imaging optical device.
Adopt the image interference etching system of gating shutter and Dove prism, its characteristics are: comprise laser instrument, spatial filtering beam-expanding collimation device, the gating shutter, the fast gate control power supply of gating, Dove prism, mask, imaging optical device and resist substrate, the narrow laser beam that laser instrument sends, become directional light by spatial filtering beam-expanding collimation device, this directional light is by after the shutter selected on the gating shutter, by end face parallel in the Dove prism with the bottom surface, the vertical illumination mask, imaging optical device is imaged onto mask on the resist substrate, realizes the exposure of vertical illumination mask; The narrow laser beam that laser instrument sends, become directional light by spatial filtering beam-expanding collimation device, this directional light is by after selected and the corresponding shutter in one of two relative inclined-planes Dove prism on the gating shutter, by the Dove prism deviation, directions X biasing illumination mask, imaging optical device is imaged onto mask on the resist substrate, realizes mask directions X biasing illuminating exposure; The narrow laser beam that laser instrument sends, become directional light by spatial filtering beam-expanding collimation device, this directional light by in selected and the Dove prism on the gating shutter another to after the corresponding shutter in one of relative inclined-plane, by the Dove prism deviation, Y direction biasing illumination mask, imaging optical device is imaged onto mask on the resist substrate, realizes mask Y direction biasing illuminating exposure; Thereby realized exposure, mask directions X biasing illuminating exposure and the mask Y direction biasing illuminating exposure of vertical illumination mask, promptly finished three times required exposures of image interference photoetching.
The present invention has compared following advantage with existing method:
(1) owing to adopts the gating shutter to make the shutter of light beam selectivity by the diverse location place in the gating shutter in the wavefront division mode, can provide illumination light for the not coplanar of thereafter Dove prism, and the Dove prism difference faces directly seeing through of light or deviation provides vertical illumination for mask, directions X biasing illumination and Y direction biasing illumination, need not adopt three times between the exposure light path adjustment, wavelength conversion, mask and (or) measure such as resist substrate rotation just can realize that required three times of image interference photoetching expose.
(2),, improve the anti-aliasing degree so no moving-member has reduced a light path adjustment and the pattern alignment difficult problem between the exposure three times, and makes system stable and compact more because the present invention when three exposures, just selects different shutter openings.
(3) the present invention adopts the adjustment of electronic shutter open-interval, the control exposure, and be easy to control each time exposure ratio, the exposure intensity of optimizing the different space frequency component is beneficial to the raising contrast, improves resolution.And do not need to add in addition attenuator adjusting exposure intensity, and convenient, flexible, system simplification.
(4) the present invention adopts Dove prism to realize the biasing illumination of vertical illumination and directions X and Y direction, than the existing system that realizes interference lithography, and the light path compactness, system stability is good, has more practicality.
(5) can change the Dove prism design according to the mask graph spatial frequency, adapt to different offset angle requirements, adaptability is stronger.
(6) the present invention is in control during exposure, and the adjusting light intensity device of the optical filter and so on that do not need to decay only needs by time shutter control, and is both convenient, flexible, simplified system again.
Description of drawings
Fig. 1 is the image interference photoetching system schematic of employing gating shutter of the present invention and Dove prism;
Fig. 2 is a gating shutter synoptic diagram of the present invention;
Fig. 3 is a Dove prism synoptic diagram of the present invention.
Embodiment
As shown in Figure 1, image interference photoetching method of the present invention comprises the following steps:
(1) gating shutter 3 and Dove prism thereafter 5 are positioned between beam-expanding collimation device 2 and the mask 3;
(2) adopt the end face parallel in the Dove prism 5, realize the exposure of vertical illumination mask with the bottom surface;
(3) in two relative inclined-planes of employing Dove prism 5 realizes directions X biasing illuminating exposure;
(4) another realizes Y direction biasing illuminating exposure to one in the relative inclined-plane to adopt Dove prism 5, thereby finishes three times required exposures of image interference photoetching.
As shown in Figure 1, the image interference etching system of employing gating shutter of the present invention and Dove prism comprises laser instrument 1, spatial filtering beam-expanding collimation device 2, gating shutter 3, the fast gate control power supply 4 of gating, Dove prism 5, mask 6, imaging optical device 7 and resist substrate 8.The narrow laser beam that laser instrument 1 sends, become the bigger plane wave of bore by spatial filtering beam-expanding collimation device 2, this plane wave shines on the corresponding surface of Dove prism 5 thereafter by the shutter of unlatching selected on the gating shutter 3 by fast gate control power supply 4 controls of gating, make light beam directly see through (end face) or deviation (inclined-plane) illumination mask 6, imaging optical device 7 to resist substrate 8, is realized the exposure to resist with the pattern imaging on the mask 6.Be three exposures that realize that image interference photoetching is required, need only just can finish by the shutter opening that is fit on the fast gate control power supply 4 selected gating shutters of gating.The shutter opening of the fast gate control power supply of gating diverse location on selecting the gating shutter and, also choose the shutter opening time, with the exposure intensity ratio between control exposure and the different exposure, be beneficial to optimize the exposure of different space frequency component, improve contrast and resolution, obtain the high fidelity figure.
As shown in Figure 2, be gating shutter synoptic diagram of the present invention, a among the figure, b, c, d, e are 5 electronic shutters, select opening and closing and the opening time of they by the fast gate control power supply of gating.Electronic shutter is exactly a conventional products, adds the voltage unlatching, and off voltage is then closed, and control flexibly.
The effect of the control power supply of gating shutter is to select shutter opening selected in the gating shutter, and regulates the opening time.Its composition comprises five shutter selector buttons, is used for selecting respectively five shutters to need the shutter of opening, and the opening time of each shutter can be selected within the specific limits, adopts common shutter timing device.Shutter is selected and the opening time, also can be designed to by computer control, selects by keyboard, and for example selected first shutter numbering is selected the opening time; Select time delay, select second shutter numbering and the opening time thereof that will open; Select time delay again, select the 3rd shutter that will open numbering and opening time thereof, select time delay, start exposure then, just can finish three exposures successively, between each exposure be arranged a time delay, purpose is to reduce the vibration effect that shutter machinery opens and closes.
As shown in Figure 3, be Dove prism synoptic diagram of the present invention.F among the figure, g, h, i.J is respectively end face (f) and four inclined-planes (side) of Dove prism.5 shutters during exposure in the gating shutter are corresponding with 5 faces of Dove prism.For example, the laser beam that sees through shutter a on the gating shutter during vertical exposure only shines the f face of Dove prism, and direct transmission light illumination mask is finished the vertical illumination mask exposure.Equally, directions X when exposure biasing, then the shutter d on the gating shutter or (with) e opens, laser beam only throw light on i or (with) the j face; Y direction when exposure biasing, b or (with) c opens, laser lighting to g or (with) the h face, four inclined-planes all make light beam produce deviation, from inclined light shaft directional lighting mask.
Claims (6)
1, a kind of image interference photoetching method that adopts gating shutter and Dove prism is characterized in that comprising the following steps:
(1) gating shutter and Dove prism thereafter are positioned between beam-expanding collimation device and the mask, make 5 electronic shutters forming the gating shutter corresponding one by one with 5 faces that are used to expose of Dove prism;
(2) when needs vertical illumination mask, only a shutter opening of centre corresponding with the Dove prism end face in the electronic shutter need be made the end face of light beam by Dove prism, thereby realize the exposure of vertical illumination mask;
(3) when needs directions X biasing illuminating exposure, only need with in all the other 4 electronic shutters with two relative inclined-planes of Dove prism in a pairing shutter opening in inclined-plane, after making light beam pass through a inclined-plane in two relative inclined-planes of Dove prism, realize directions X biasing illuminating exposure;
(4) when needs Y direction biasing illuminating exposure, only need with in all the other 4 electronic shutters with two relative inclined-planes in addition of Dove prism in a pairing shutter opening in inclined-plane, after making light beam pass through a inclined-plane in addition two relative inclined-planes of Dove prism, realize Y direction biasing illuminating exposure;
Promptly finish image interference photoetching by above three exposures.
2, the image interference photoetching method of employing gating shutter according to claim 1 and Dove prism is characterized in that: by changing each time of exposing of opening time control of described gating shutter.
3, the image interference photoetching method of employing gating shutter according to claim 1 and Dove prism is characterized in that: control the opening and closing of described gating shutter and the opening time of control gating shutter by the fast gate control power supply of gating.
4, adopt the image interference etching system of gating shutter and Dove prism, it is characterized in that: comprise laser instrument, spatial filtering beam-expanding collimation device, the gating shutter, the fast gate control power supply of gating, Dove prism, mask, imaging optical device and resist substrate, the narrow laser beam that laser instrument sends, become directional light by spatial filtering beam-expanding collimation device, this directional light is by after the shutter selected on the gating shutter, by end face parallel in the Dove prism with the bottom surface, the vertical illumination mask, imaging optical device is imaged onto mask on the resist substrate, realizes the exposure of vertical illumination mask; The narrow laser beam that laser instrument sends, become directional light by spatial filtering beam-expanding collimation device, this directional light is by after selected and the corresponding shutter in one of two relative inclined-planes Dove prism on the gating shutter, by the Dove prism deviation, directions X biasing illumination mask, imaging optical device is imaged onto mask on the resist substrate, realizes directions X biasing illuminating exposure; The narrow laser beam that laser instrument sends, become directional light by spatial filtering beam-expanding collimation device, this directional light by in selected and the Dove prism on the gating shutter another to after the corresponding shutter in one of relative inclined-plane, by the Dove prism deviation, Y direction biasing illumination mask, imaging optical device is imaged onto mask on the resist substrate, realizes Y direction biasing illuminating exposure; Thereby exposure, directions X biasing illuminating exposure and the Y direction biasing illuminating exposure of vertical illumination mask have been realized, promptly finish three times required exposures of image interference photoetching, in three exposure process, only need need not to move any parts by the opening and closing of the fast gate control power supply control of gating gating shutter and the opening time of gating shutter.
5, the image interference etching system of employing gating shutter according to claim 4 and Dove prism is characterized in that: described gating shutter is made up of 5 electronic shutters, and middle one is used for the vertical illumination mask exposure; In other two pairs of electronic shutters, a pair of directions X biasing illuminating exposure that is used for, another selects one or two shutter of a centering for use to being used for Y direction biasing illuminating exposure during the biasing illuminating exposure.
6, the image interference etching system of employing gating shutter according to claim 4 and Dove prism is characterized in that: by changing each time of exposing of opening time control of described gating shutter.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100094058A CN100541331C (en) | 2004-08-05 | 2004-08-05 | Adopt the image interference photoetching method and the etching system thereof of gating shutter and Dove prism |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100094058A CN100541331C (en) | 2004-08-05 | 2004-08-05 | Adopt the image interference photoetching method and the etching system thereof of gating shutter and Dove prism |
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| Publication Number | Publication Date |
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| CN1731284A CN1731284A (en) | 2006-02-08 |
| CN100541331C true CN100541331C (en) | 2009-09-16 |
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| CN105301783A (en) * | 2014-05-28 | 2016-02-03 | 长春理工大学 | Six-beam interference system based on self-cleaning surface structure manufacture |
| CN113805439A (en) * | 2021-09-23 | 2021-12-17 | 上海度宁科技有限公司 | Projection photoetching machine, illumination system, control system and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2432001Y (en) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | Laser interference photoetching system |
| CN2449258Y (en) * | 2000-11-08 | 2001-09-19 | 中国科学院光电技术研究所 | Multi-beam formation system for interference photoetching |
| US6320648B1 (en) * | 1998-10-12 | 2001-11-20 | Steven R. J. Brueck | Method and apparatus for improving pattern fidelity in diffraction-limited imaging |
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2004
- 2004-08-05 CN CNB2004100094058A patent/CN100541331C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6320648B1 (en) * | 1998-10-12 | 2001-11-20 | Steven R. J. Brueck | Method and apparatus for improving pattern fidelity in diffraction-limited imaging |
| CN2432001Y (en) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | Laser interference photoetching system |
| CN2449258Y (en) * | 2000-11-08 | 2001-09-19 | 中国科学院光电技术研究所 | Multi-beam formation system for interference photoetching |
Non-Patent Citations (1)
| Title |
|---|
| 波前分割无掩模激光干涉光刻的实现方法. 冯伯儒，张锦，郭永康.光电工程，第31卷第2期. 2004 * |
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