CN100543176C - The magnetron sputtering cathode target that is used for ultra-high vacuum system - Google Patents
The magnetron sputtering cathode target that is used for ultra-high vacuum system Download PDFInfo
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- CN100543176C CN100543176C CNB2006100966510A CN200610096651A CN100543176C CN 100543176 C CN100543176 C CN 100543176C CN B2006100966510 A CNB2006100966510 A CN B2006100966510A CN 200610096651 A CN200610096651 A CN 200610096651A CN 100543176 C CN100543176 C CN 100543176C
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- magnetron sputtering
- sputtering cathode
- high vacuum
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Abstract
The invention discloses a kind of magnetron sputtering cathode target that is used for ultra-high vacuum system.On it, lower flange (15,16) be built-in with the cooling trough (13 that communicates, 9), advance, rising pipe (1,2) cut off cooling trough (9) and weld mutually with it, upper flange (15) upper end and target mounting cup (12) spin, be equipped with magnet holder (10) and magnet (11) in the cavity, be equipped with between lower surface and lower flange (16) and be positioned at, the outer edge of a knife (7,8) metal o-ring of locating (17,18), and it is fixing through screw (14), little flange (21) is welded in outside the rising pipe (2), be equipped with insulating trip (4 between itself and shielding case (19) and pedestal flange (22), 6), and and be through with between the pedestal flange (22) of extraction pipe (3) and be equipped with two zero type cushion rubbers (23,24), and the screw (20) of suit insulating sleeve (5) is fixing outside it.Its vacuum tightness is up to 6 * 10
-8Pa can realize the preparation of high quality high purity metal or nonmetal film.
Description
Technical field
The present invention relates to a kind of magnetron sputtering cathode target, in particular for the magnetron sputtering cathode target of ultra-high vacuum system.
Background technology
Along with the particularly fast development of semiconductor integrated circuit technology of semiconducter device, the preparation of semiconductor surface contacting metal electrode and the passivation technology of semiconductor surface seem particularly important.The employing magnetron sputtering technique prepares above-mentioned metal and nonmetal film is one of the most frequently used technique means, be characterized in process stabilizing, film thickness is easy to control, the deposit of high energy particle can be provided, film forming compactness is good, thereby this technology has become the most common technique that semiconducter device is produced the preparation of unicircuit particularly.As " a kind of plane magnetic controlled sputtering target " that in the Chinese utility application specification sheets CN 2030599U of bulletin on January 11st, 1989, discloses.It adopts the magnet seal closure to be built-in with the structure of pure iron, magnet and cooling system.During use, its negative electrode as sputtering equipment is placed in the vacuum chamber, and wherein cooling system is continuously supplied water through water inlet pipe.But, this sputtering target exists weak point, at first, pack in the magnet seal closure behind pure iron, magnet and the cooling system, if welding encapsulation, then be difficult to each parts of packing in it are carried out necessary maintenance and replacing, if the cover-plate type encapsulation, then gas leakage infiltration phenomenon very easily takes place in encapsulation place in the future; Secondly, as negative electrode, need with sputtering equipment in other parts carry out electric insulation, and insulation layer is non-metallic material and makes, this just can't use the mode of welding to solve mutual sealing problem; Once more, because of its structural defective, make that the vacuum tightness of sputtering equipment is the highest can only to reach 10
-6Pa, this can not be avoided the residual gas in the system, react as oxygen, nitrogen, water vapour and target, form nitride oxide, thereby improved the contact resistance of splash-proofing sputtering metal film or influenced the purity and the density of passive film, and then restricted the electric property and the yield rate of semiconducter device, unicircuit; At last, place the magnet pole easy-to-rust of water coolant all the time, in the past for a long time, make its effect unaffected unavoidably, cause the increase of the job insecurity of sputtering equipment integral body and use, maintenance cost the most at last.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of vacuum tightness to be higher than 10 for overcoming weak point of the prior art
-6Pa, rational in infrastructure, working service is used for the magnetron sputtering cathode target of ultra-high vacuum system easily.
The technical scheme that is adopted comprises magnet holder, magnet and the water-cooled parts in the shielding case, particularly (a) said water-cooled parts comprise the covering wound form cooling trough that the upper flange that is connected is built-in with, cooling trough, water inlet pipe and the rising pipe that lower flange is built-in with, wherein, said water inlet pipe is set in the said rising pipe, and cut off said lower flange cooling trough and be connected with its welding, said rising pipe is connected with surplus welding of said lower flange cooling trough; (b) upper end of said upper flange and target mounting cup spin, are equipped with in the cavity between magnet holder and position magnet, lower surface and said lower flange thereon through its mutual screw thread and be equipped with two metal o-rings, and be fixedly connected through screw, said two metal o-rings are positioned on said upper flange and the said lower flange internal layer edge of a knife and the outer knife-edge part that symmetry respectively is equipped with; (c) said rising pipe external welding is connected with little flange, said little flange and said shielding case and pedestal pulling method your beautiful writings all are equipped with insulating trip and also are equipped with two zero type cushion rubbers with said pedestal pulling method your beautiful writings, and itself and said shielding case and said pedestal flange are fixedly connected through screw, said screw is set with insulating sleeve outward, is through with extraction pipe on the pedestal flange between said two zero type cushion rubbers.
As the further improvement of technical scheme, described metal o-ring is oxygen free copper sealing-ring or aluminium wire sealing-ring or filamentary silver sealing-ring; Described insulating trip is poly-tetrafluoro sheet; Described zero type cushion rubber is logical type (Viton) fluorine rubber ring of dimension; Described insulating sleeve is poly-tetrafluoro sleeve.
Beneficial effect with respect to prior art is, one, by last, be equipped with the covering wound form cooling trough and the cooling trough that communicate in the lower flange respectively, and advance, rising pipe cuts off cooling trough and welds mutually with it and the water-cooled parts that constitute, both guaranteed the conveying of water coolant, the normal performance of cooling effect and the tightness of cooling system, fully having completely cut off magnet again contacts with the direct of water coolant, stopped the corrosion of magnet, the quality that has guaranteed magnet remains unchanged for a long period of time, can also be by advancing, rising pipe with by last, the common cathode that constitutes such as lower flange and magnet is electrically connected; They are two years old, magnet holder and position magnet thereon are placed in the cavity of upper flange, the upper end of upper flange and target mounting cup through its mutual screw thread spin, lower surface and lower flange upper surface be fixedly connected through screw, and be equipped with two metal o-rings between the two, and these two metal o-rings are positioned at symmetrically arranged respectively inside and outside layer knife-edge part on the upper and lower flange, not only guaranteed the tightness between upper and lower flange, also be convenient to the maintenance and the replacing of magnet, and the installation of target, dismounting and fixing, also making contact resistance between the two simultaneously is zero; They are three years old, by the negative electrode target that upper and lower flange and magnet, target mounting cup etc. constitute jointly,, can directly not be with target to be baked to 200 ℃ so need not dismantle because of it is metal construction, greatly quicken and promoted the useful vacuum degree of magnetron sputtering target, reduced the use cost of sputtering equipment widely; They are four years old, after the both sides of the little flange of rising pipe external welding are provided with insulating trip and two zero type cushion rubbers respectively, again respectively with shielding case, the pedestal flange is fixedly connected it through screw, and outside screw, be set with insulating sleeve and on the pedestal flange between two zero type cushion rubbers, connect extraction pipe, remove and realized as on the negative electrode, lower flange and as outside the electric insulation between the pedestal flange of ground terminal, also guaranteed mutual tightness, avoid the introducing of electrode in ultra-high vacuum system must use the drawback of sintering metal welded seal, reduced the cost of making and using.Extraction pipe on the pedestal flange between two zero type cushion rubbers, gas in its chamber that forms is each other directly extracted out in advance, reduced the influence of the gas efficiency of survival gas in the chamber and ○Xing Mifengquan self to the vacuum chamber ultrahigh vacuum(HHV) widely, it is inside and outside in the barometric point gradient at two ○Xing Mifengquan places also to have reduced vacuum chamber simultaneously widely; Its five, be placed in the vacuum chamber of sputtering equipment, the vacuum tightness of sputtering equipment can reach 6 * 10
-8Pa has improved two orders of magnitude than the vacuum tightness of existing sputtering target, can be used for multiple sputtering technologies such as direct current and radio frequency, can realize the preparation of high quality high purity metal or nonmetal film.
As the further embodiment of beneficial effect, the one, insulating trip and insulating sleeve all adopt poly-PTFE, and insulation characterisitic that it is good and extremely low gas efficiency had both guaranteed the electric insulation of negative electrode target and pedestal pulling method your beautiful writings, can not influence the acquisition of ultrahigh vacuum(HHV) again; Two is that two ○Xing Mifengquans are all selected the logical type fluorine cushion rubber of dimension for use, and the characteristics that its gas efficiency is extremely low have tentatively been established the basis that obtains ultrahigh vacuum(HHV).
Description of drawings
Below in conjunction with accompanying drawing optimal way of the present invention is described in further detail.
Fig. 1 is a kind of basic structure diagrammatic cross-section of the present invention.
Embodiment
Referring to Fig. 1, the covering wound form cooling trough 13 that is built-in with by the upper flange 15 that is connected, cooling trough 9, water inlet pipe 1 and the rising pipe 2 that lower flange 16 is built-in with constitute the water-cooled parts; Wherein, water inlet pipe 1 is sleeved in the rising pipe 2, and cuts off cooling trough 9 and be connected with its welding, and rising pipe 2 is connected with surplus welding of cooling trough 9.Be equipped with in the cavity of upper flange 15 the magnet holder 10 of making and position magnet 11, upper end and target mounting cup 12 thereon by soft iron through its mutual screw thread spin, lower surface and 16 of lower flanges be equipped with two metal o-rings (17,18), and through screw 14 be fixedly connected.Two metal o-rings (17,18) are the oxygen free copper sealing-ring, and it lays respectively at the symmetrical respectively internal layer edge of a knife 7 and the outer edge of a knife 8 places that are equipped with on upper flange 15 and the lower flange 16.Little flange 21 is welded to connect outside rising pipe 2, the shielding case 19 and 22 of the pedestal flanges of itself and built-in target mounting cup 12, upper flange 15, lower flange 16 etc. all are equipped with insulating trip (4,6) and and 22 of pedestal flanges also be equipped with two zero type cushion rubbers (23,24), and through screw 20 itself and shielding case 19 and pedestal flange 22 are fixedly connected; Wherein, insulating trip (4,6) is poly-tetrafluoro sheet, and zero type cushion rubber (23,24) is the logical type fluorine rubber ring of dimension.Be through with extraction pipe 3 on the screw 20 outer pedestal flanges 22 that are set with between 5, two zero type cushion rubbers of insulating sleeve (23,24); Insulating sleeve 5 wherein is poly-tetrafluoro sleeve.
During use, only need pedestal flange 22 is loaded on the companion flange of vacuum chamber, extraction pipe 3 is connected with vacuum pump and gets final product.If the rafifinal target is installed in the present invention, sputtering equipment uses dc sputtering power, just can produce silvery white aluminium film; The not dark muddiness of this aluminium film is regional, reflectance is good and weldability is strong, has greatly improved the performance of device.If the high-purity silicon oxide target is installed in the present invention, sputtering equipment uses radio-frequency power supply, feeds argon gas as sputter gas, just can produce the silicon oxide film of excellent property.If high-purity silicon target is installed in the present invention, sputtering equipment uses radio-frequency power supply, and the gas mixture that feeds argon gas and nitrogen just can be produced the high purity silicon nitride passive film as sputter gas.
Obviously, those skilled in the art can carry out various changes and modification to the magnetron sputtering cathode target that is used for ultra-high vacuum system of the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (5)
1, a kind of vacuum tightness that is used for is higher than 10
-6The magnetron sputtering cathode target of Pa ultra-high vacuum system comprises magnet holder (10), magnet (11) and water-cooled parts in the shielding case (19), it is characterized in that:
(a) said water-cooled parts comprise the covering wound form cooling trough (13) that the upper flange (15) that is connected is built-in with, cooling trough (9), water inlet pipe (1) and the rising pipe (2) that lower flange (16) is built-in with, wherein, said water inlet pipe (1) is set in the said rising pipe (2), and cut off said cooling trough (9) and be connected with its welding, said rising pipe (2) is connected with surplus welding of said cooling trough (9);
(b) upper end of said upper flange (15) and target mounting cup (12) spin, are equipped with in the cavity between magnet holder (10) and position magnet (11), lower surface and said lower flange (16) thereon through its mutual screw thread and be equipped with two metal o-rings (17,18), and be fixedly connected through screw (14), said two metal o-rings (17,18) are positioned on said upper flange (15) and the said lower flange (16) the internal layer edge of a knife (7) and the outer edge of a knife (8) that symmetry respectively is equipped with and locate;
(c) said rising pipe (2) external welding is connected with little flange (21), all be equipped with insulating trip (4 between said little flange (21) and said shielding case (19) and pedestal flange (22), 6) and and said pedestal flange (22) between also be equipped with two zero type cushion rubbers (23,24), and itself and said shielding case (19) and said pedestal flange (22) are fixedly connected through screw (20), the outer insulating sleeve (5) that is set with of said screw (20), be through with extraction pipe (3) on the pedestal flange (22) between said two zero type cushion rubbers (23,24).
2, the vacuum tightness that is used for according to claim 1 is higher than 10
-6The magnetron sputtering cathode target of Pa ultra-high vacuum system is characterized in that metal o-ring (17,18) is oxygen free copper sealing-ring or aluminium wire sealing-ring or filamentary silver sealing-ring.
3, the vacuum tightness that is used for according to claim 1 is higher than 10
-6The magnetron sputtering cathode target of Pa ultra-high vacuum system is characterized in that insulating trip (4,6) is poly-tetrafluoro sheet.
4, the vacuum tightness that is used for according to claim 1 is higher than 10
-6The magnetron sputtering cathode target of Pa ultra-high vacuum system is characterized in that zero type cushion rubber (23,24) is the logical type fluorine rubber ring of dimension.
5, the vacuum tightness that is used for according to claim 1 is higher than 10
-6The magnetron sputtering cathode target of Pa ultra-high vacuum system is characterized in that insulating sleeve (5) is poly-tetrafluoro sleeve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100966510A CN100543176C (en) | 2006-10-14 | 2006-10-14 | The magnetron sputtering cathode target that is used for ultra-high vacuum system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100966510A CN100543176C (en) | 2006-10-14 | 2006-10-14 | The magnetron sputtering cathode target that is used for ultra-high vacuum system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101161855A CN101161855A (en) | 2008-04-16 |
| CN100543176C true CN100543176C (en) | 2009-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100966510A Expired - Fee Related CN100543176C (en) | 2006-10-14 | 2006-10-14 | The magnetron sputtering cathode target that is used for ultra-high vacuum system |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104775098A (en) * | 2014-01-11 | 2015-07-15 | 烟台力凯电子科技有限公司 | Target-type sputtering coater |
| WO2019021519A1 (en) * | 2017-07-25 | 2019-01-31 | 株式会社アルバック | Sputtering device cathode unit |
| CN109440070A (en) * | 2018-11-19 | 2019-03-08 | 东部超导科技（苏州）有限公司 | Sputtering target cooling device based on IBAD nano coating equipment |
| CN111560588B (en) * | 2020-05-09 | 2022-05-03 | 南方科技大学 | Magnetron sputtering target and magnetron sputtering device for ultrahigh vacuum environment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2030599U (en) * | 1987-12-17 | 1989-01-11 | 成都电讯工程学院 | Planar magnetic-control sputtering target |
| US6039848A (en) * | 1995-07-10 | 2000-03-21 | Cvc Products, Inc. | Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. |
-
2006
- 2006-10-14 CN CNB2006100966510A patent/CN100543176C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2030599U (en) * | 1987-12-17 | 1989-01-11 | 成都电讯工程学院 | Planar magnetic-control sputtering target |
| US6039848A (en) * | 1995-07-10 | 2000-03-21 | Cvc Products, Inc. | Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. |
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| Publication number | Publication date |
|---|---|
| CN101161855A (en) | 2008-04-16 |
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Granted publication date: 20090923 Termination date: 20111014 |