CN100543976C - Optoelectronic component encapsulation construction with silica substrate - Google Patents
Optoelectronic component encapsulation construction with silica substrate Download PDFInfo
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- CN100543976C CN100543976C CN 200610100967 CN200610100967A CN100543976C CN 100543976 C CN100543976 C CN 100543976C CN 200610100967 CN200610100967 CN 200610100967 CN 200610100967 A CN200610100967 A CN 200610100967A CN 100543976 C CN100543976 C CN 100543976C
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- silica substrate
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- component encapsulation
- encapsulation construction
- conductive
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 288
- 239000000758 substrate Substances 0.000 title claims abstract description 150
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 144
- 238000005538 encapsulation Methods 0.000 title claims abstract description 80
- 238000010276 construction Methods 0.000 title claims abstract description 77
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 77
- 239000002184 metal Substances 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 abstract description 23
- 230000003287 optical effect Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 20
- 239000000463 material Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The invention provides a kind of optoelectronic component encapsulation construction with silica substrate.Utilize micro electronmechanical technology or semiconductor technology to carry out the batch manufacturing of silica substrate, produce the silica substrate that possesses variation and accuracy.Configuration according to elements such as the characteristic of silica substrate itself and the guiding line on the silica substrate, photoelectric cell, recessed cup structure and inversed-chip lugs, the present invention can increase optical effect, radiating effect and the encapsulating structure reliability of optoelectronic component encapsulation construction, and simplifies the element complexity of optoelectronic component encapsulation construction.
Description
Technical field
The relevant a kind of optoelectronic component encapsulation construction of the present invention with silica substrate, relevant especially a kind of optoelectronic component encapsulation construction that utilizes micro electronmechanical technology or semiconductor technology made with silica substrate.
Background technology
Light-emitting diode (light-emitting diode; LED) element belongs to chemiluminescence, have advantages such as power consumption is low, component life long, need not warm up the lamp time, reaction speed is fast, add that its volume is little, vibration resistance, be fit to volume production, the fit applications demand is made the element of minimum or array easily, so light-emitting diode generally is used on the indicator light and display unit of information, communication and consumption electronic products.Light-emitting diode also occupies the ground of a seat in auto industry except that being applied to outdoor various display and traffic signal light, in addition at portable product, in the application as mobile phone, PDA screen backlight source, beautiful achievement is also arranged.Especially at present hot lcd products, when the module part of selecting with its collocation backlight, the key part and component that light-emitting diode is indispensable especially.
Please refer to Fig. 1 and Fig. 2.Fig. 1 is that (Surface Mount Device looks schematic diagram on package structure for LED SMD) to a known surface installing type, and Fig. 2 is the generalized section of the package structure for LED of surface installing type shown in Figure 1 along 1-1 ' direction.As Fig. 1 and shown in Figure 2, package structure for LED 10 includes one glass of type substrate 12, a conducting bracket 14, a photoelectric cell 16, a lead 18 and a lead 20 and a sealing 22.Wherein, photoelectric cell 16 is one to send the semiconductor element of light by applied voltage, includes a positive electrode and a negative electrode (figure does not show), and utilizes lead 18 and lead 20 to be connected to conducting bracket 14 respectively.14 of conducting brackets are to be positioned at a glass type substrate 12, and extend to glass outer surface of type substrate 12, in order to be electrically connected printed circuit board (PCB) 24.
Because known package structure for LED 10 needs to form earlier cup type substrate 12; utilize pressing mold or encapsulating mode to finish encapsulation; utilize surface mounting technology that other package structure for LED 10 is integrated on the printed circuit board (PCB) 24 again, so complex process, be difficult to carry out batch making.When being applied to High Power LED encapsulating structure 10, the cup type substrate 12 that is used for carrying photoelectric cell 16 can be because overheated and influence problems such as transmitting illuminant wavelength, brightness decay even producing component burn.Because the volume of known package structure for LED 10 is comparatively huge, add the radiating requirements of High Power LED encapsulating structure 10, make whole package structure for LED 10 on size and radiating efficiency, all be restricted.
Summary of the invention
The purpose of this invention is to provide a kind of optoelectronic component encapsulation construction with silica substrate, but it has batch making, increases optical effect, radiating effect and the encapsulating structure reliability of optoelectronic component encapsulation construction, and simplifies the advantages such as element complexity of optoelectronic component encapsulation construction.
In an embodiment, the optoelectronic component encapsulation construction with silica substrate provided by the invention includes a silica substrate, a plurality of guiding line (connecter) and at least one photoelectric cell.Silica substrate has a upper surface and a lower surface, and silica substrate has a plurality of conductive through holes, and each conductive through hole runs through the upper surface and the lower surface of silica substrate.The guiding line includes a plurality of threading conductive connecting lines and at least one heat conduction line, and each threading conductive connecting line extends to the lower surface of silica substrate through conductive through hole from the upper surface of silica substrate, and the heat conduction line is covered in the part lower surface of silica substrate.Photoelectric cell is arranged on the upper surface of silica substrate, and corresponding to the heat conduction line, and photoelectric cell is electrically connected to the threading conductive connecting line.
In another embodiment, the optoelectronic component encapsulation construction with silica substrate provided by the invention includes one and has the upper surface that the silica substrate of a upper surface, a plurality of guiding line and at least one photoelectric cell are arranged at silica substrate.Wherein, the guiding line is the part upper surface that is covered in silica substrate with planar, and photoelectric cell is electrically connected to the guiding line.
In another embodiment, optoelectronic component encapsulation construction with silica substrate provided by the invention includes a siliceous wafer, definition has a plurality of silica substrates on the siliceous wafer, and each silica substrate includes a plurality of guiding lines and at least one photoelectric cell is electrically connected to the guiding line.Wherein, silica substrate has at least two kinds of contour shapes.
In another embodiment, the silica substrate with inversed-chip lug provided by the invention includes a plurality of conductive through holes, a plurality of guiding line and a plurality of inversed-chip lug.Silica substrate has a upper surface and a lower surface, and each conductive through hole runs through the upper surface and the lower surface of silica substrate.The guiding line includes a plurality of threading conductive connecting lines and at least one heat conduction line, and each threading conductive connecting line extends to the lower surface of silica substrate through conductive through hole from the upper surface of silica substrate, and the heat conduction line is covered in the part lower surface of silica substrate.Inversed-chip lug is arranged at the upper surface of silica substrate, and is electrically connected with the threading conductive connecting line.
Because the present invention utilizes micro electronmechanical technology or semiconductor technology to carry out the batch manufacturing of silica substrate, therefore can produce the silica substrate that possesses variation and accuracy.Configuration according to elements such as the characteristic of silica substrate itself and the guiding line on the silica substrate, photoelectric cell, recessed cup structure and inversed-chip lugs, the present invention can increase optical effect, radiating effect and the encapsulating structure reliability of optoelectronic component encapsulation construction, and simplifies the element complexity of optoelectronic component encapsulation construction.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred implementation cited below particularly, and cooperate appended graphicly, be described in detail below.Yet following preferred implementation and graphic only for reference and explanation usefulness are not to be used for the present invention is limited.
Description of drawings
Fig. 1 is for looking schematic diagram on the package structure for LED of a known surface installing type;
Fig. 2 is the generalized section of the package structure for LED of surface installing type shown in Figure 1 along 1-1 ' direction;
Fig. 3 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for first preferred embodiment of the present invention;
Fig. 4 is for looking schematic diagram on the optoelectronic component encapsulation construction shown in Figure 3;
Fig. 5 has the schematic diagram of the optoelectronic component encapsulation construction of silica substrate for second preferred embodiment of the present invention;
Fig. 6 is an optoelectronic component encapsulation construction shown in Figure 5 generalized section along 5-5 ' direction;
Fig. 7 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 3rd preferred embodiment of the present invention;
Fig. 8 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 4th preferred embodiment of the present invention;
Fig. 9 has the generalized section of the silica substrate of inversed-chip lug for the 5th preferred embodiment of the present invention;
Figure 10 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 6th preferred embodiment of the present invention;
Figure 11 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 7th preferred embodiment of the present invention;
Figure 12 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 8th preferred embodiment of the present invention;
Figure 13 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 9th preferred embodiment of the present invention;
Figure 14 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the tenth preferred embodiment of the present invention;
Figure 15 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 11 preferred embodiment of the present invention.
The main element symbol description:
10 package structure for LED
12 glasss of type substrates
14 conducting brackets
16、36、106、116、126、
136,156 photoelectric cells
18,20 leads
22 sealings
24,48 printed circuit board (PCB)s
30、60、70、80、100、110、
120,130,140,150 optoelectronic component encapsulation constructions
32、62、72、82、92、102、
112,122,132,142,152 silica substrates
34、94、104、114、124、
134,144,154 guiding lines
34a, 94a threading conductive connecting line
34b, 94b heat conduction line
38、108、118、128、138、
148a, 148b, the recessed cup structure of 148c
42,64,98,312 conductive through holes
44 encapsulating material layers
The 46a insulating barrier
The 46b optical thin film
52 metal connecting layer
54 grooves
56,96 inversed-chip lugs
74 heat abstractors
101、111、121、131、141、
151 siliceous wafers
108a, 118a, 138a sloped sidewall
108b, 128b, 138b vertical sidewall
118c, 128c, 138c circular arc sidewall
146a red light-emitting diode element
The 146b blue light emitting diode element
146c green light LED element
310 first degree of depth
320 second degree of depth
330 the 3rd degree of depth
Embodiment
Please refer to Fig. 3 and Fig. 4, Fig. 3 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for first preferred embodiment of the present invention, and Fig. 4 is for looking schematic diagram on the optoelectronic component encapsulation construction shown in Figure 3.Be noted that graphic only for the purpose of description, do not map according to life size.As shown in Figure 3 and Figure 4, optoelectronic component encapsulation construction 30 includes a silica substrate 32, a plurality of guiding line 34 and at least one photoelectric cell 36.The material of silica substrate 32 includes polysilicon, amorphous silicon or monocrystalline silicon, can be square silicon or circular silicon, and wherein can include integrated circuit or passive component.Silica substrate 32 has a upper surface and a lower surface, its upper surface can form the recessed cup structure 38 of a depression, with ccontaining photoelectric cell 36, and utilize the factors such as position, cup depth, recess width and sidewall shape of recessed cup structure 38 to control the optical effect of optoelectronic component encapsulation construction 30.Can have a plurality of conductive through holes 42 on the silica substrate 32, each conductive through hole 42 runs through the upper surface and the lower surface of silica substrate 32.
Guiding line 34 includes a plurality of threading conductive connecting line 34a and at least one heat conduction line 34b, threading conductive connecting line 34a and heat conduction line 34b can utilize and electroplate or micro electronmechanical technology such as deposition or semiconductor technology and be formed at the upper and lower surface of silica substrate 32 and the sidewall of conductive through hole 42 simultaneously, utilize etch process to separate threading conductive connecting line 34a and heat conduction line 34b again, make the two not electrically contact.Each threading conductive connecting line 34a is the lower surface that extends to silica substrate 32 through conductive through hole 42 from the upper surface of silica substrate 32.Heat conduction line 34b then is covered in the part lower surface of silica substrate 32, and it is provided with optimum seeking site is below corresponding to photoelectric cell 36.In practical application, heat conduction line 34b can be a planar metal level, and each threading conductive connecting line 34a then can be a planar metal level or a metallic circuit layer.
Except that said elements, optoelectronic component encapsulation construction 30 of the present invention can include encapsulating material layer 44, insulating barrier 46a and optical thin film 46b in addition.Encapsulating material layer 44 can be resin and material for transformation of wave length, phosphor powder or diffusion material mix; and utilize modes such as pressing mold or encapsulating to be packaged on the silica substrate 32; increase the production reliability of optoelectronic component encapsulation construction 30, and the optical effect of regulation and control photoelectric cell 36.Optical thin film 46b can be the plated film of a high index of refraction, is arranged at the bottom and the sidewall of recessed cup structure 38, cooperates recessed cup structure 38 further to increase the light quantity of getting of optoelectronic component encapsulation construction 30.
See through the threading conductive connecting line 34a of silica substrate 32 lower surfaces, optoelectronic component encapsulation construction 30 can utilize modes such as mounted on surface to be connected on the printed circuit board (PCB) 48, wherein printed circuit board (PCB) 48 can be strengthened macromolecular material (glass fiber reinforced polymeric material) by glass and constituted, as FR-1, FR-2, FR-3, FR-4 or the FR-5 of ANSI level, or metal clip koan printed circuit board (metalcore printed circuit board).Its concrete mounting means can be gone up prior to printed circuit board (PCB) 48 surfaces and form tin cream as metal connecting layer 52, and make metal connecting layer 52 corresponding to the threading conductive connecting line 34a of optoelectronic component encapsulation construction 30 lower surfaces and heat conduction line 34b and be engaged with each other, make optoelectronic component encapsulation construction 30 see through threading conductive connecting line 34a and metal connecting layer 52 by this and be electrically connected to printed circuit board (PCB) 48, and make photoelectric cell 36 can see through silica substrate 32, heat conduction line 34b, the heat radiation approach that metal connecting layer 52 and printed circuit board (PCB) 48 are constituted and the heat that produces is conducted to the external world reaches the framework that heat is separated with electricity.In addition, in order to prevent that metal connecting layer 52 is squeezed or offset and contacting with other elements, the lower surface of silica substrate 32 of the present invention can include a plurality of grooves (trench) 54 in addition, with ccontaining unnecessary tin cream, thus, need not use expensive high value wafer can reduce the probability that short circuit phenomenon takes place.
Optoelectronic component encapsulation construction of the present invention also can possess other sample attitudes, please refer to Fig. 5 and Fig. 6, Fig. 5 has the schematic diagram of the optoelectronic component encapsulation construction of silica substrate for second preferred embodiment of the present invention, and Fig. 6 is an optoelectronic component encapsulation construction shown in Figure 5 generalized section along 5-5 ' direction, and wherein components identical or position are continued to use identical symbol and represented.As Fig. 5 and shown in Figure 6, optoelectronic component encapsulation construction 60 includes a silica substrate 62, a plurality of guiding line 34 and at least one photoelectric cell 36.The material of silica substrate 62 includes polysilicon, amorphous silicon or monocrystalline silicon, can have integrated circuit or passive component.The upper surface of silica substrate 62 has the recessed cup structure 38 of a depression, with ccontaining photoelectric cell 36.
Guiding line 34 includes a plurality of threading conductive connecting line 34a, also can include at least one heat conduction line 34b in addition, threading conductive connecting line 34a and heat conduction line 34b can utilize technologies such as plating or deposition to be formed at the upper and lower surface of silica substrate 62 and the sidewall of conductive through hole 64 simultaneously, utilize etch process to separate threading conductive connecting line 34a and heat conduction line 34b again, make the two not electrically contact.Each threading conductive connecting line 34a is the lower surface that extends to silica substrate 62 through conductive through hole 64 from the upper surface of silica substrate 62.Heat conduction line 34b then is covered in the part lower surface of silica substrate 62, and it is provided with optimum seeking site is below corresponding to photoelectric cell 36.In practical application, heat conduction line 34b can be a planar metal level, and each threading conductive connecting line 34a then can be a planar metal level or a metallic circuit layer.
Positive electrode on the photoelectric cell 36, negative electrode can be connected to threading conductive connecting line 34a via inversed-chip lug 56 respectively and go up defined positive electrode terminal, negative electrode terminal, and the threading conductive connecting line 34a that sees through silica substrate 62 lower surfaces again is electrically connected on the printed circuit board (PCB) (figure does not show).In addition, photoelectric cell 36 can see through the heat radiation approach that silica substrate 62, heat conduction line 34b and printed circuit board (PCB) constituted and the heat that produces is conducted to the external world, reaches the framework that heat is separated with electricity.
Especially attention is, the conductive through hole 42 of first preferred embodiment is the silica substrate 32 that runs through under the recessed cup structure 38, and the conductive through hole 64 of present embodiment is to run through recessed cup structure 38 silica substrate 62 on every side.Because the conductive through hole 64 of present embodiment is positioned at around the recessed cup structure 38, the threading conductive connecting line 34a that therefore guides line 34 can be covered in the bottom and the sidewall of recessed cup structure 38.According to this configuration, threading conductive connecting line 34a can promote the effect of light, electricity, hot three aspects simultaneously.Except the approach of offeing telex, the threading conductive connecting line 34a of metal material also can provide good reflecting effect and increase the optics benefit, even can directly bring into play the effect of optical thin film, moreover, the threading conductive connecting line 34a of metal material also has the characteristic of high heat-conduction coefficient, can increase the radiating effect of optoelectronic component encapsulation construction 60.
Of the present invention other are implemented the sample attitude in addition can be with reference to figure 7 and Fig. 8, Fig. 7 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 3rd preferred embodiment of the present invention, and Fig. 8 has the generalized section of the optoelectronic component encapsulation construction of silica substrate for the 4th preferred embodiment of the present invention, and wherein components identical or position are continued to use identical symbol and represented.
As shown in Figure 7, optoelectronic component encapsulation construction 70 includes a silica substrate 72, a plurality of guiding line 34 and at least one photoelectric cell 36.The upper surface of silica substrate 72 has the recessed cup structure 38 of a depression, with ccontaining photoelectric cell 36.
Guiding line 34 can be a planar metal level or a metallic circuit layer, includes the usefulness of a plurality of threading conductive connecting line 34a power supply connections, with the usefulness of at least one heat conduction line 34b heat supply conduction.Positive electrode on the photoelectric cell 36, negative electrode can be connected to threading conductive connecting line 34a via inversed-chip lug 56 respectively and go up defined positive electrode terminal, negative electrode terminal, see through threading conductive connecting line 34a again and are electrically connected on the printed circuit board (PCB) 48.What especially note is, the heat conduction line 34b of optoelectronic component encapsulation construction 70 lower surfaces can be connected with at least one heat abstractor 74 in addition, for example contact with a radiating fin, make photoelectric cell 36 see through silica substrate 72, heat conduction line 34b and heat abstractor 74 and heat is conducted to the external world, reach the framework that heat is separated with electricity.
As shown in Figure 8, optoelectronic component encapsulation construction 80 includes a silica substrate 82, a plurality of guiding line 34 and at least one photoelectric cell 36.The upper surface of silica substrate 82 has the recessed cup structure 38 of a depression, with ccontaining photoelectric cell 36.Guiding line 34 can be a planar metal level or a metallic circuit layer, the usefulness of the connection of can powering, heat conduction and optics increase.Positive electrode on the photoelectric cell 36, negative electrode can be connected to defined positive electrode terminal, negative electrode terminal on the guiding line 34 via inversed-chip lug 56 respectively, see through guiding line 34 again and are electrically connected on the printed circuit board (PCB) 48.What especially note is, owing to can utilizing the micro electronmechanical technology or the semiconductor technology of technology maturation, silica substrate 82 forms fine structure, therefore optoelectronic component encapsulation construction 80 lower surfaces of present embodiment can form heat radiation fin structure, make photoelectric cell 36 directly see through silica substrate 82 and reach better heat radiating effect.
What another point need be paid special attention to is, because the present invention can utilize micro electronmechanical technology or semiconductor technology to carry out the manufacturing of silica substrate, therefore can directly form inversed-chip lug on the surface of silica substrate, follow-uply engages with photoelectric cell separately again.Please refer to Fig. 9, Fig. 9 has the generalized section of the silica substrate of inversed-chip lug for the 5th preferred embodiment of the present invention.As shown in Figure 9, silica substrate 92 includes a plurality of guiding lines 94 and a plurality of inversed-chip lugs 96, and silica substrate 92 itself has a plurality of conductive through holes 98, and each conductive through hole 98 runs through the upper surface and the lower surface of silica substrate 92.Guiding line 94 includes a plurality of threading conductive connecting line 94a and at least one heat conduction line 94b, and each threading conductive connecting line 94a is the lower surface that extends to silica substrate 92 through conductive through hole 98 from the upper surface of silica substrate 92.Heat conduction line 94b is covered in the part lower surface of silica substrate 92, preferably is formed at the position that silica substrate 92 needs heat radiation.What especially note is that inversed-chip lug 96 is the upper surfaces that directly are formed at silica substrate 92, and is electrically connected with threading conductive connecting line 94a.In view of this, the silica substrate of present embodiment can directly engage and encapsulate with photoelectric cell, and need not just carry out projection technology at individual other photoelectric cell when encapsulation, therefore significantly increases the prouctiveness of encapsulating structure.
On the other hand, because the present invention is the encapsulation of carrying out photoelectric cell with silica substrate, therefore can utilize micro electronmechanical technology or semiconductor technology to carry out the batch manufacturing of silica substrate, produce the silica substrate that possesses differently contoured shape, improve the variation and the accuracy of optoelectronic component encapsulation construction.Please refer to Figure 10 to Figure 15, Figure 10 to Figure 15 is respectively the 6th to the 11 preferred embodiment of the present invention and has the generalized section of the optoelectronic component encapsulation construction of silica substrate.
As shown in figure 10, optoelectronic component encapsulation construction 100 includes a siliceous wafer 101, has defined a plurality of silica substrates 102 on the siliceous wafer 101 according to the demand of product.Each silica substrate 102 includes a plurality of guiding lines 104 and a photoelectric cell 106 is electrically connected to guiding line 104, and guiding line 104 can be a planar metal level or a metallic circuit layer.Because the present invention can utilize micro electronmechanical technology or semiconductor technology and make silica substrate 102 on siliceous wafer 101, therefore can form a plurality of difform recessed cup structures 108 in the upper surface of the siliceous wafer 101 of monolithic.Each silica substrate 102 as present embodiment includes a recessed cup structure 108 respectively, and wherein at least one recessed cup structure 108 has a sloped sidewall 108a, and at least one recessed cup structure 108 then has a vertical sidewall 108b.
Different according to etching mask and etching mode, the present invention can form the recessed cup structure configuration of other sidewall shape in addition.As shown in figure 11, optoelectronic component encapsulation construction 110 includes a siliceous wafer 111, and definition has a plurality of silica substrates 112 on the siliceous wafer 111.Each silica substrate 112 includes a plurality of guiding lines 114, a photoelectric cell 116 is electrically connected to guiding line 114, with a recessed cup structure 118.In present embodiment, at least one recessed cup structure 118 has a sloped sidewall 118a, and at least one recessed cup structure 118 then has a circular arc sidewall 118c.
As shown in figure 12, optoelectronic component encapsulation construction 120 includes a siliceous wafer 121, and definition has a plurality of silica substrates 122 on the siliceous wafer 121.Each silica substrate 122 includes a plurality of guiding lines 124, a photoelectric cell 126 is electrically connected to guiding line 124, with a recessed cup structure 128.In present embodiment, at least one recessed cup structure 128 has a vertical sidewall 128b, and at least one recessed cup structure 128 then has a circular arc sidewall 128c.
Shown in Figure 13, optoelectronic component encapsulation construction 130 includes a siliceous wafer 131, and definition has a plurality of silica substrates 132 on the siliceous wafer 131.Each silica substrate 132 include a plurality of guiding lines 134, a photoelectric cell 136 be electrically connected to guiding line 134, with a recessed cup structure 138.Wherein, a recessed cup structure 138 has a sloped sidewall 138a, and a recessed cup structure 138 has a vertical sidewall 138b, and another recessed cup structure 138 then has a circular arc sidewall 138c.
The different lateral shape that is cooperating above-mentioned recessed cup structure 108,118,128,138, optoelectronic component encapsulation construction 100,110,120,130 can be provided with different photoelectric cell 106,116,126,136 in recessed cup structure 108,118,128,138, for example photoelectric cell 106,116,126,136 can be red light-emitting diode element, blue light emitting diode element or green light LED element or the like, to build different illumination effects.
In addition, the required optical effect of the luminous situation of the shape of recessed cup structure and position visible light electric device and optoelectronic component encapsulation construction and adjusting.As shown in figure 14, optoelectronic component encapsulation construction 140 includes a siliceous wafer 141, and definition has a plurality of silica substrates 142 on the siliceous wafer 141.In present embodiment, each silica substrate 142 includes a red light-emitting diode element 146a, a blue light emitting diode element 146b, a green light LED element 146c, the ccontaining red light-emitting diode element of recessed cup structure 148a 146a, the ccontaining blue light emitting diode element 146b of a recessed cup structure 148b, the ccontaining green light LED element of recessed cup structure 148c 146c, is electrically connected to above-mentioned light-emitting diode 146a, 146b, 146c respectively with a plurality of guiding lines 144.
Especially attention is, at least one silica substrate 142, recessed cup structure 148a has one first degree of depth 310, and recessed cup structure 148b and recessed cup structure 148c then have one second degree of depth 320, and first degree of depth 310 is greater than second degree of depth 320.And in another silica substrate 142 at least, recessed cup structure 148a has first degree of depth 310, recessed cup structure 148b has second degree of depth 320, recessed cup structure 148c has one the 3rd degree of depth 330, and first degree of depth 310 is greater than second degree of depth 320, second degree of depth 320 is greater than the 3rd degree of depth 330, to cooperate the characteristics of luminescence of light-emitting diode 146a, 146b, 146c.
Except the difference of above-mentioned recessed cup structure, also can form the optoelectronic component encapsulation construction of aforementioned each embodiment on the siliceous wafer of monolithic simultaneously.In conjunction with aforementioned each embodiment, on the siliceous wafer of monolithic, just can form the optoelectronic component encapsulation constructions that possess different efficacies more, promote the variability and the value of product.As shown in figure 15, optoelectronic component encapsulation construction 150 includes a siliceous wafer 151, and definition has a plurality of silica substrates 152 on the siliceous wafer 151.Each silica substrate 152 includes a plurality of guiding lines 154, is electrically connected to guiding line 154 with a photoelectric cell 156.Wherein, at least one silica substrate 152 has conductive through hole 312, and the guiding line 154 that makes silica substrate 152 can see through conductive through hole 312 and extend to the lower surface of silica substrate 152 from the upper surface of silica substrate 152.In addition, the photoelectric cell 156 of another silica substrate 152 is silica substrate 152 upper surfaces that place not depression at least, and the lower surface of silica substrate 152 is to be heat radiation fin structure, to increase the heat dissipation of optoelectronic component encapsulation construction 150.
After treating that element required on the aforementioned optoelectronic component encapsulation construction is all finished, each silica substrate just can utilize mode such as cutting disconnected from each other, and sees through the guiding line of silica substrate and be electrically connected to corresponding printed circuit board (PCB).
Because the present invention adopts silica substrate as optoelectronic component encapsulation construction, and silicon has good thermal conduction effect, therefore can promote the heat dissipation of optoelectronic component encapsulation construction.In addition, the hot coefficient of dilatation of silicon is close with the light-emitting diode that is all semi-conducting material, more can improve the reliability of optoelectronic component encapsulation construction as encapsulating material.
Moreover, optoelectronic component encapsulation construction with silica substrate can utilize micro electronmechanical technology or semiconductor technology to carry out batch manufacturing, configuration according to elements such as the characteristic of silica substrate itself and the guiding line on the silica substrate, photoelectric cell, recessed cup structure and inversed-chip lugs, the present invention can increase optical effect, radiating effect and the encapsulating structure reliability of optoelectronic component encapsulation construction, and simplifies the element complexity of optoelectronic component encapsulation construction.
The above only is the preferred embodiments of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (8)
1. optoelectronic component encapsulation construction with silica substrate includes:
One silica substrate, this silica substrate has a upper surface and a lower surface, and this silica substrate has a plurality of conductive through holes, and respectively this conductive through hole runs through this upper surface and this lower surface of this silica substrate;
A plurality of guiding lines, described guiding line includes a plurality of threading conductive connecting lines and at least one heat conduction line, respectively this threading conductive connecting line see through described conductive through hole and certainly this upper surface of this silica substrate extend to this lower surface of this silica substrate, and this heat conduction line is covered in this lower surface of part of this silica substrate; And
At least one photoelectric cell, this photoelectric cell are arranged on this upper surface of this silica substrate, and corresponding to this heat conduction line, and this photoelectric cell is electrically connected to described threading conductive connecting line,
Wherein said threading conductive connecting line and this heat conduction line do not electrically connect.
2. optoelectronic component encapsulation construction as claimed in claim 1, wherein this upper surface of this silica substrate has a recessed cup structure, and this photoelectric cell is arranged in this recessed cup structure.
3. optoelectronic component encapsulation construction as claimed in claim 2, wherein said conductive through hole run through this silica substrate under this recessed cup structure.
4. optoelectronic component encapsulation construction as claimed in claim 2, wherein said conductive through hole run through this silica substrate around this recessed cup structure.
5. optoelectronic component encapsulation construction as claimed in claim 1, the described threading conductive connecting line that wherein is positioned at this lower surface of this silica substrate contacts with a metal connecting layer, and is electrically connected to a printed circuit board (PCB) through this metal connecting layer.
6. optoelectronic component encapsulation construction as claimed in claim 1, wherein this heat conduction line below contacts with a metal connecting layer, and this metal connecting layer contacts with a printed circuit board (PCB).
7. optoelectronic component encapsulation construction as claimed in claim 1, wherein this heat conduction line is a planar metal level.
8. optoelectronic component encapsulation construction as claimed in claim 1, wherein this photoelectric cell is a light-emitting diode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200610100967 CN100543976C (en) | 2006-08-04 | 2006-08-04 | Optoelectronic component encapsulation construction with silica substrate |
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| CN 200610100967 CN100543976C (en) | 2006-08-04 | 2006-08-04 | Optoelectronic component encapsulation construction with silica substrate |
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| CN 200810177449 Division CN101425495A (en) | 2006-08-04 | 2006-08-04 | Optoelectronic component encapsulation construction having silica substrate |
| CN 200810177450 Division CN101425496B (en) | 2006-08-04 | 2006-08-04 | Silicon substrate having flip chip projection |
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| CN100543976C true CN100543976C (en) | 2009-09-23 |
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| CN108802593B (en) * | 2018-04-12 | 2021-01-08 | 合肥英唐电子有限公司 | Full-automatic test equipment for testing finished product glue sealing circuit board with nixie tube |
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