CN100549220C - Magnetic control sputtering device - Google Patents

Magnetic control sputtering device Download PDF

Info

Publication number
CN100549220C
CN100549220C CNB2004100054597A CN200410005459A CN100549220C CN 100549220 C CN100549220 C CN 100549220C CN B2004100054597 A CNB2004100054597 A CN B2004100054597A CN 200410005459 A CN200410005459 A CN 200410005459A CN 100549220 C CN100549220 C CN 100549220C
Authority
CN
China
Prior art keywords
permanent magnet
target
negative electrode
yoke type
type permanent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100054597A
Other languages
Chinese (zh)
Other versions
CN1603456A (en
Inventor
井关隆之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koyo Seiko Co Ltd
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003341258A external-priority patent/JP4470429B2/en
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Publication of CN1603456A publication Critical patent/CN1603456A/en
Application granted granted Critical
Publication of CN100549220C publication Critical patent/CN100549220C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/548Controlling the composition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering

Abstract

Provide a kind of simple in structure, have the magnetic control sputtering device of the high target of service efficiency.By constituting: vacuum chamber (2) with the lower section; Negative electrode (4) is positioned at described vacuum chamber (2) inside, keeps target (3); Anode (6) is positioned at the top of negative electrode (4), keeps target (3) the side opposing substrates (5) with negative electrode (4); Permanent magnet (7) is positioned at the below of negative electrode (4), is used to produce magnetic field; And rotating control assembly (12), be axle with the center of target (3), make described permanent magnet (7) rotation, permanent magnet (7) is by constituting with the lower section: bottom (8) are used for fixing magnet; Permanent magnet (9), the central part of (8) bottom being fixed in; And permanent magnet (10), be fixed in the end of bottom (8), around permanent magnet (9), polar polarity and magneticstrength opposite with permanent magnet (9) than permanent magnet (9) a little less than, in addition, the top of permanent magnet (7) is the shape with the cylinder declinate cutting.

Description

Magnetic control sputtering device
Technical field
The present invention relates to a kind of magnetic control sputtering device, particularly relate to the magnetic control sputtering device that to realize high target service efficiency with yoke type permanent magnet.
Background technology
Magnetic control sputtering device is being widely used as existing sputter equipment.
Figure 13 is the sectional view of the existing magnetic control sputtering device of expression.
Existing magnetic control sputtering device 18 is by constituting with the lower section: vacuum chamber 2; Negative electrode 4 is positioned at this vacuum chamber 2 inside, mounting target 3; Anode 6 is positioned at the top of this negative electrode 4, the target 3 side opposing substrates 5 of mounting and negative electrode 4; With yoke type permanent magnet 7, be used for below negative electrode 4, producing magnetic field.
Yoke type permanent magnet 7 is by constituting with the lower section: bottom 8, and on this bottom 8, be fixed in the first yoke type permanent magnet 9 of central part, and be fixed in the end, around the second yoke type permanent magnet 10 of the toroidal of the first yoke type permanent magnet 9.The upper end of the first yoke type permanent magnet 9 is the N utmost point, and the lower end is the S utmost point, and the upper end of the second yoke type permanent magnet 10 is the S utmost point, and the lower end is the N utmost point.The upper end of this yoke type permanent magnet 7 is on same plane.Thus, produce since the N utmost point side of the first yoke type permanent magnet 9 magnetic field to the S utmost point side of the second yoke type permanent magnet 10.
Below its action is described.
After gases such as Ar importing vacuum chamber 3 inside, provide high-frequency electrical between never illustrated power supply anode 6 and the negative electrode 4, make the generation plasma body.This plasma body is caught by magnetic field.
Particularly, relative target surface becomes vertical part and is captured morely this plasma body in magnetic field, therefore, with perpendicular target surface, this magnetic field in because plasma density uprises, so can carry out sputter efficiently.
But as shown in figure 13, the target part that plasma body is assembled is concentrated sputter, so if use target continuously, can form the 13a of the portion of degrading, the 13b that are degraded dearly, even the part of degrading beyond the 13a of portion, the 13b is morely residual, can not re-use target 3.
In order to address the above problem, to have the spy and open disclosed magnetic control sputtering device in the 2002-069637 communique.
Promptly, the spy opens and discloses a kind of magnetic control sputtering device in the 2002-069637 communique, in aforesaid magnetic control sputtering device as shown in figure 13, possess have make from the first yoke type permanent magnet 9 different with the magneticstrength that the second yoke type permanent magnet 10 produces, and the running gear that yoke type permanent magnet 7 is moved up and down.
Patent documentation 1: the spy opens 2002-069637 communique (3-4 page or leaf, the 3rd figure).
Summary of the invention
Yet owing to need to flow through water coolant in the negative electrode, so do not make water that the running gear that moves up and down that leaks take place in order to be provided with, it is quite complicated that device becomes.
In addition, be positioned at the target part of the central magnetic pole of permanent magnet owing to become the non-part of degrading easily, so that the raising of target utilising efficiency be restricted.
Therefore, propose the present invention in order to address the above problem a little, its objective is provides a kind of service efficiency simple in structure, its target high magnetic control sputtering device.
First invention provides a kind of magnetic control sputtering device, by constituting with the lower section: vacuum chamber; Target; Negative electrode is positioned at described vacuum chamber inside, keeps described target; Substrate; Anode is positioned at the top of described negative electrode, keeps described substrate, and the target side that makes described substrate and described negative electrode in opposite directions; Permanent magnet is positioned at the below of described negative electrode, is used to produce magnetic field; And rotating control assembly, making described permanent magnet serves as the axle rotation via rotating rod with the center of described target, it is characterized in that:
Described permanent magnet comprises: the bottom is used for fixing magnet; First permanent magnet makes the misalignment of the described relatively target of its central shaft, and is fixed in described bottom; With second permanent magnet of toroidal, be fixed in the end of described bottom, around described first permanent magnet, polar polarity is opposite with the polarity of described first permanent magnet, and magneticstrength than described first permanent magnet a little less than,
The upper angled of described first permanent magnet, the top of described second permanent magnet tilts with the pitch angle identical with the top of described first permanent magnet,
A low side of the rake of described first permanent magnet is arranged on the rotation center more lateral than described rotating rod.
Second invention provides a kind of magnetic control sputtering device, by constituting with the lower section: vacuum chamber; Target; Negative electrode is positioned at described vacuum chamber inside, keeps described target; Anode is positioned at the top of described negative electrode, keeps described substrate, and the target side that makes described substrate and described negative electrode in opposite directions; Permanent magnet is positioned at the below of described negative electrode, is used to produce magnetic field; And rotating control assembly, be axle with the center of target, make described permanent magnet rotation, it is characterized in that:
The Wedge gripping that between described rotating control assembly and described permanent magnet, has the tilt angle theta of regulation,
Described permanent magnet comprises: the bottom, contact with the top of described Wedge gripping, and be used for fixing magnet; First permanent magnet is fixed on the described bottom, and it is positioned at than the position that tilts, below more, the center of described target; With second permanent magnet of toroidal, be fixed in the end of described bottom, around described first permanent magnet, polar polarity is opposite with the polarity of described first permanent magnet, and magneticstrength than described first permanent magnet a little less than.
The 3rd invention provides a kind of magnetic control sputtering device, by constituting with the lower section: vacuum chamber; Negative electrode is positioned at described vacuum chamber inside, keeps target; Anode is positioned at the top of described negative electrode, keeps the target side substrate in opposite directions with described negative electrode; Permanent magnet is positioned at the below of described negative electrode, is used to produce magnetic field; And rotating control assembly, be axle with the center of target, make described permanent magnet rotation, it is characterized in that:
Described permanent magnet comprises: the bottom is used for fixing magnet; First permanent magnet is fixed in the central part of described bottom; With second permanent magnet, be fixed in the end of described bottom, around described first permanent magnet, polar polarity is opposite with the polarity of described first permanent magnet, and magneticstrength than described first permanent magnet a little less than, in addition, to make described permanent magnet be top with the shape of cylinder declinate cutting or about the turning axle of described permanent magnet highly different shapes.
According to the present invention, obtain simple in structure, the magnetic control sputtering device that the service efficiency of its target is high.
Description of drawings
Fig. 1 is the sectional view of the magnetic control sputtering device of expression first embodiment of the invention.
Fig. 2 is the skeleton view of the structure of the yoke type permanent magnet that uses in the first embodiment of the invention of expression.
Fig. 3 is used to illustrate when yoke type permanent magnet tilts below left oblique upper is oblique to the right, degrades near the amplification view of yoke type permanent magnet of the formation of portion.
Fig. 4 is used to illustrate when yoke type permanent magnet tilts below right oblique upper is oblique left, degrades near the amplification view of yoke type permanent magnet of the formation of portion.
Fig. 5 is illustrated in the portion of degrading that forms on the target, (A) be notion sectional view under the first and the 4th embodiment situation, (B) be notion sectional view under second and third embodiment situation, (C) being notion sectional view under the 5th embodiment situation, (D) is the notion sectional view under the expression prior art situation.
Fig. 6 is illustrated in the actual measurement of the portion of degrading that forms on the target, (A) be the actual measurement sectional view of the target of the radial direction of starting at from the center among the first and the 4th embodiment, (B) be the actual measurement sectional view of the target of the radial direction of starting at from the center among second and third embodiment, (C) being the actual measurement sectional view of the target of the radial direction of starting at from the center among the 5th embodiment, (D) is the actual measurement sectional view of the target of the radial direction of starting at from the center in the conventional example.
Fig. 7 represents in the second embodiment of the invention near the yoke type permanent magnet, is near the amplification view that is used to illustrate when the yoke type permanent magnet of formation of portion is degraded at the center of the relative target in center of the first yoke type permanent magnet when direction departs to the left.
Fig. 8 is near the amplification view that is used to illustrate when the yoke type permanent magnet of formation of portion is degraded at the center of the relative target in center of the first yoke type permanent magnet when direction departs to the right.
Fig. 9 is the sectional view of the magnetic control sputtering device of expression fourth embodiment of the invention.
Figure 10 is the skeleton view of the structure of the yoke type permanent magnet that uses in the fourth embodiment of the invention of expression.
Figure 11 is the sectional view of the magnetic control sputtering device of expression fifth embodiment of the invention.
Figure 12 is near the amplification view of yoke type permanent magnet of the magnetic control sputtering device of sixth embodiment of the invention.
Figure 13 is the sectional view of the existing magnetic control sputtering device of expression.
Embodiment
Referring to figs. 1 through Figure 11 the magnetic control sputtering device of various embodiments of the present invention is described.
To the formation identical with conventional example, be marked with identical label, omit its explanation.
Fig. 1 is the sectional view of the magnetic control sputtering device of expression first embodiment of the invention.Fig. 2 is the skeleton view of the structure of the yoke type permanent magnet that uses in the first embodiment of the invention of expression.Fig. 3 is used to illustrate when yoke type permanent magnet tilts below left oblique upper is oblique to the right, degrades near the amplification view of yoke type permanent magnet of the formation of portion.Fig. 4 is used to illustrate when yoke type permanent magnet tilts below right oblique upper is oblique left, degrades near the amplification view of yoke type permanent magnet of the formation of portion.Fig. 5 is illustrated in the portion of degrading that forms on the target, (A) be notion sectional view under the first and the 4th embodiment situation, (B) being notion sectional view under second and third embodiment situation, (C) is the notion sectional view under the 5th embodiment situation, (D) is the notion sectional view of expression prior art situation.Fig. 6 is illustrated in the actual measurement of the portion of degrading that forms on the target, (A) be the actual measurement sectional view of the target of the radial direction of starting at from the center among the first and the 4th embodiment, (B) be the actual measurement sectional view of the target of the radial direction of starting at from the center among second and third embodiment, (C) being the actual measurement sectional view of the target of the radial direction of starting at from the center among the 5th embodiment, (D) is the actual measurement sectional view of the target of the radial direction of starting at from the center in the conventional example.Fig. 7 represents in the second embodiment of the invention near the yoke type permanent magnet, is near the amplification view that is used to illustrate when the yoke type permanent magnet of formation of portion is degraded at the center of the relative target in center of the first yoke type permanent magnet when direction departs to the left.Fig. 8 is near the amplification view that is used to illustrate when the yoke type permanent magnet of formation of portion is degraded at the center of the relative target in center of the first yoke type permanent magnet when direction departs to the right.Fig. 9 is the sectional view of the magnetic control sputtering device of expression fourth embodiment of the invention.Figure 10 is the skeleton view of the structure of the yoke type permanent magnet that uses in the fourth embodiment of the invention of expression.Figure 11 is the sectional view of the magnetic control sputtering device of expression fifth embodiment of the invention.Figure 12 is near the amplification view of yoke type permanent magnet of the magnetic control sputtering device of sixth embodiment of the invention.
Embodiment one
As shown in Figure 1, the magnetic control sputtering device 1 of first embodiment of the invention is by constituting with the lower section: vacuum chamber 2; Negative electrode 4 is positioned at this vacuum chamber 2 inside, keeps target 3; Anode 6 is positioned at the top of this negative electrode 4, keeps the target 3 sides substrate 5 in opposite directions with negative electrode 4; Yoke type permanent magnet 7 is used for producing magnetic field below negative electrode 4; With rotating control assembly 12, as axle, make yoke type permanent magnet 7 via rotating rod 11 rotations with the center of target 3.
As shown in Figure 2, yoke type permanent magnet 7 is by constituting with the lower section: bottom 8 is used for fixing magnet; The first yoke type permanent magnet 9 is fixed in the central part of this bottom 8, upper angled; With the second yoke type permanent magnet 10 of toroidal, be fixed on 8 end, bottom, around the first yoke type permanent magnet 9, and top tilts to a direction with the pitch angle identical with the first yoke type permanent magnet 9.The first yoke type permanent magnet 9 for example is made of NdFeB, and the second yoke type permanent magnet 10 is for example by constituting with the incorporate Fe in bottom.Thus, the top of the first yoke type permanent magnet 9 is the N utmost point, and the bottom is the S utmost point, and the top of the second yoke type permanent magnet 10 is the S utmost point, and the bottom is the N utmost point.The upper surface of the second yoke type permanent magnet 10 is become the weak magnetic field of upper surface magnetization than the first yoke type permanent magnet 9 by 9 magnetization of the first yoke type permanent magnet.
Because the magneticstrength on the first yoke type permanent magnet, 9 tops is bigger than the top of the second yoke type permanent magnet 10, so magnetic field 14 by 7 generations of yoke type permanent magnet, be since the first yoke type permanent magnet, 9 tops towards the top of the second yoke type permanent magnet 10, and launch to distribute laterally.
The material of this permanent magnet constitutes and the spy to open in the 2002-069637 communique disclosed magnetic control sputtering device identical.
At this moment, since the 10 oblique inclinations of the second yoke type permanent magnet, the polar height difference in the left and right sides, and so the 13a of the portion of degrading, 13b that the target surface occurs, asymmetric position forms in the left and right sides, center of distance target 3.
As shown in Figure 3, under the situation that yoke type permanent magnet 7 tilts below tiltedly to the right from left oblique upper, the 13a of the portion of degrading in left side forms in the position than the more close target of the 13b of the portion of degrading 3 centers on right side.
That is, to degrade the 13a of portion be d apart from the position at the center of target 3 if establish 1, degrading the 13b of portion is d apart from the position at the center of target 3 2, the pass, position of degrading the 13a of portion, 13b is d 1<d 2
In addition, as shown in Figure 4, with above-mentioned opposite, under the situation that yoke type permanent magnet 7 tilts below tiltedly left from right oblique upper, the 13b of the portion of degrading on right side forms in the position than the more close target of the 13a of the portion of degrading 3 centers in left side.
That is, to close be d in the position of degrading the 13a of portion, 13b 1>d 2
After the gas of Ar etc. imported vacuum chamber 2 inside, make permanent magnet 7 rotations, produce plasma body simultaneously if drive rotating control assembly 12, the sputter of beginning target 3, above-mentioned position of degrading the 13a of portion, 13b can change continuously.
Its result obtains identical with the special magnetic control sputtering device of opening the 2002-069637 communique expansion effect of degrading, and compared with the prior art, can enlarge the 13a of the portion of degrading, 13b on the target 3.In addition, being used to obtain the structure of the yoke type permanent magnet 7 of this effect, can not be the pole surface of tilted shape shown here, for example can be the different structure with step of height of seeing left and right sides pole surface from section.
When utilizing magnetic control sputtering device 1 sputter of first embodiment of the invention, to formed result of study of degrading the shape of the 13a of portion, 13b on target 3, shown in Fig. 5 (A).Fig. 6 (A) represents the section of this actual measurement.In addition, as the 13a of the portion of degrading that is used to form Fig. 5 (A)~(D) and Fig. 6 (A)~(C) expression, the sputtering condition of 13b, target material uses the Al of 5 inches of Φ, and sputtering pressure is 3mTorr, and sputtering time is 34000Wh.
Shown in Fig. 5 (A), degrade the centrosymmetry of the relative target 3 of the 13a of portion, 13b, with the situation comparison of the prior art shown in Fig. 5 (D), it is extended to degrade the 13a of portion, 13b.The service efficiency of this target 3 is roughly the same with the situation that the spy opens the 2002-069637 communique, is 30~50%.
As above-mentioned, according to first embodiment of the invention, yoke type permanent magnet 7 is by constituting with the lower section: the bottom 8 that is used for fixing magnet; Be fixed in the first yoke type permanent magnet 9 of the central part of bottom 8; Be fixed in 8 end, bottom, around the first yoke type permanent magnet 9, polar polarity is opposite with the aforementioned first yoke type permanent magnet 9, and the second yoke type permanent magnet 10 of magneticstrength a little less than than the first yoke type permanent magnet 9; In addition, because the top of yoke type permanent magnet 7 is the shape that cylinder is tilted to cut off, perhaps highly different shape about turning axle, degrade the 13a of portion, 13b so 7 rotations of yoke type permanent magnet just can be enlarged, thereby obtain the high magnetic control sputtering device 1 of service efficiency simple in structure, its target.
Embodiment two
Below with reference to Fig. 7 and Fig. 8 the second embodiment of the present invention is described.
Formation to identical with first embodiment is marked with identical label, omits its explanation.
As shown in Figure 7, the second embodiment of the present invention, replace the yoke type permanent magnet in the existing magnetic control sputtering device shown in Figure 13, make the misalignment of the center of the first yoke type permanent magnet 9 from target 3, the top of the top of the second yoke type permanent magnet 10 and the first yoke type permanent magnet 9 is on same plane, and all the other are all identical.
Identical under this situation with first embodiment, owing to be to make the formation of the center of the first yoke type permanent magnet 9, degrade the 13a of portion, 13b in asymmetrical position formation from the left and right sides, center of target 3 from the misalignment of target 3.
Under the center situation that direction departs to the left of the relative target 3 in center of the first yoke type permanent magnet 9, close the position of degrading the center of the relative target 3 of the 13a of portion, 13b is d1>d2 (Fig. 7).
As shown in Figure 8, with above-mentioned opposite, under the center situation that direction departs to the right of the relative target 3 in center of the first yoke type permanent magnet 9, close the position of degrading the center of the relative target 3 of the 13a of portion, 13b is d1<d2.
After the gas of Ar etc. imported vacuum chamber 2 inside, make permanent magnet 7 rotations, produce plasma body simultaneously if drive rotating control assembly 12, the sputter of beginning target 3, identical with the first embodiment of the present invention, the position of degrading the 13a of portion, 13b can change.Particularly, because the change in location of central magnetic pole, the non-zone of degrading diminishes, with situation such as conventional example relatively, can enlarge the 13a of the portion of degrading, 13b on the target 3 more.In addition, in a second embodiment, be not as among first embodiment, to make the magneticstrength of central magnetic pole stronger than the magneticstrength of peripheral pole, and obtain than such constitute further enlarge effect.
When utilizing magnetic control sputtering device 1 sputter of second embodiment of the invention, for the result of study of the shape of the 13a of the portion of degrading, the 13b of formation on target 3, shown in Fig. 5 (B).Fig. 6 (B) represents the section of this actual measurement.
Shown in Fig. 5 (B), degrade the centrosymmetry of the relative target 3 of the 13a of portion, 13b, roughly the same with the situation of the first embodiment of the invention shown in Fig. 5 (A).
That is, the service efficiency of target 3 is 30~50%.
As above-mentioned, according to second embodiment, the central part of target 3 is also by sputter, thus identical with first embodiment, obtain the high magnetic control sputtering device 1 of service efficiency of its target.
Embodiment three
Below the third embodiment of the present invention is described.
Formation to identical with first and second embodiment is marked with identical symbol, omits its explanation.
The third embodiment of the present invention and the second embodiment difference be, be not the whole rotation of permanent magnet, but only the first yoke type permanent magnet 9 shakes in the horizontal direction, thereby change with the distance of the second yoke type permanent magnet 10.This principle and second embodiment are identical, so the effect and second embodiment are roughly the same.Therefore, this action specification is also roughly the same with Fig. 7, Fig. 8, thereby has omitted detailed description.
Under the situation of second embodiment, owing to make the permanent magnet rotation, target and permanent magnet are necessary for circle basically.Relative with it, under the situation of the 3rd embodiment, because permanent magnet integral body do not rotate, so, for example under the situation of film forming rectangle target on the large substrate, also be suitable for being used for.
As above-mentioned, a third embodiment in accordance with the invention is because only sputter when the first yoke type permanent magnet 9 is shaken so can obtain the effect roughly the same with the second embodiment of the present invention, in addition, also can be applicable to rectangular target etc.
Embodiment four
Below the fourth embodiment of the present invention is described.
To the formation identical with the first embodiment of the present invention, be marked with identical symbol, omit its explanation.
As shown in Figure 9, magnetic control sputtering device 15 among the 4th embodiment, to the processing of not tilting of the top of the yoke type permanent magnet 7 among first embodiment, the top that makes first, second yoke type permanent magnet 9,10 is at same plane (Figure 10), on the rotating rod 11 of rotating control assembly 12, the Wedge gripping 16 that installation makes yoke type permanent magnet 7 tilt to have the tilt angle theta of regulation, all the other are all identical.Wherein, the tilt angle theta of Wedge gripping 16 is 8 °.
As above-mentioned, replace making the upper angled of yoke type permanent magnet 7, even use the Wedge gripping 16 of the tilt angle theta of regulation, also obtain the action effect identical with first embodiment.
In addition, as first embodiment, make the top of yoke type permanent magnet 7 become the processing difficulty relatively at the angle of inclination of regulation, by comparison, Wedge gripping 16 does not need to select material, so form the wedge shape of the tilt angle theta of regulation easily.Therefore, can make cheap magnetic control sputtering device 15.
In addition, use the 4th embodiment magnetic control sputtering device the time degrade coming to the same thing of first embodiment shown in shape and Fig. 5 (A), Fig. 6 (A) represents the section of its actual measurement.
Embodiment five
Below the fifth embodiment of the present invention is described.
To the formation identical with the second embodiment of the present invention, be marked with identical symbol, omit its explanation.
As shown in figure 11, the magnetic control sputtering device 17 of the 5th embodiment, the first yoke type permanent magnet 9 that makes of the yoke type permanent magnet 7 of second embodiment explanation is positioned at than the position that tilts, below more, the center of target 3, the Wedge gripping 16 of the tilt angle theta with regulation is installed on the rotating rod 11 of rotating control assembly 12, and all the other are all identical.
That is, the 5th embodiment is the combination of second embodiment and the 4th embodiment.
When utilizing magnetic control sputtering device 17 sputters of fifth embodiment of the invention, for the result of study of the shape of the 13a of the portion of degrading, the 13b of formation on target 3, shown in Fig. 5 (C).In addition, Fig. 6 (B) is illustrated in the section of actual measurement in this case.
Shown in Fig. 5 (C), degrade the centrosymmetry of the relative target 3 of the 13a of portion, 13b, with the situation of the second embodiment of the present invention shown in Fig. 5 (B) relatively, not only the central part end of target 3 is all by sputter, thus the service efficiency of target rises.In this case, to increase substantially be 90% to the service efficiency of target 3.
As above-mentioned, according to the 5th embodiment, the central part end of light target 3 so can use the almost all surfaces of target, does not obtain the high magnetic control sputtering device of service efficiency 17 by sputter yet.
In addition, in fourth, fifth embodiment, the angle of inclination that makes Wedge gripping 16 is 8 °, and the shape of yoke type permanent magnet 7, balance of magneticstrength by the first yoke type permanent magnet 9 and the second yoke type permanent magnet 10 etc., the angle of inclination also obtains identical effect when being 5 °~15 °.
Embodiment six
Below the sixth embodiment of the present invention is described.
To with the identical formation of the first, the 4th embodiment, be marked with identical symbol, omit its explanation.
As shown in figure 12, the magnetic control sputtering device of the 6th embodiment, on the rotating rod 11 of the rotating control assembly 12 in first embodiment as shown in Figure 1, make the low side of rake of the first yoke type permanent magnet 9 of the yoke type permanent magnet 7 of upper angled as shown in Figure 2 be arranged on rotation center more lateral than rotating rod 11, all the other are all identical.
Obtain the action effect identical in this case with the 5th embodiment.
Among first~the 6th above embodiment, making yoke type permanent magnet 7 serves as the axle rotation with the center of target 3, rather than must be with the center of target 3 as axle.For example, when the diameter of target 3 is 5 inches of Φ, also can make aforementioned yoke type permanent magnet 7 in the rotation of the position of the about 15mm of distance misalignment.
The possibility of utilizing on the industry
When carrying out magnetron sputtering, go for making the more wide zone of target effectively to spatter Injection device.

Claims (2)

1. magnetic control sputtering device is by constituting with the lower section: vacuum chamber; Target; Negative electrode is positioned at described vacuum chamber inside, keeps described target; Substrate; Anode is positioned at the top of described negative electrode, keeps described substrate, and the target side that makes described substrate and described negative electrode in opposite directions; Permanent magnet is positioned at the below of described negative electrode, is used to produce magnetic field; And rotating control assembly, making described permanent magnet serves as the axle rotation via rotating rod with the center of described target, it is characterized in that:
Described permanent magnet comprises: the bottom is used for fixing magnet; First permanent magnet makes the misalignment of the described relatively target of its central shaft, and is fixed in described bottom; With second permanent magnet of toroidal, be fixed in the end of described bottom, around described first permanent magnet, polar polarity is opposite with the polarity of described first permanent magnet, and magneticstrength than described first permanent magnet a little less than,
The upper angled of described first permanent magnet, the top of described second permanent magnet tilts with the pitch angle identical with the top of described first permanent magnet,
A low side of the rake of described first permanent magnet is arranged on the rotation center more lateral than described rotating rod.
2. magnetic control sputtering device is by constituting with the lower section: vacuum chamber; Target; Negative electrode is positioned at described vacuum chamber inside, keeps described target; Substrate; Anode is positioned at the top of described negative electrode, keeps described substrate, and the target side that makes described substrate and described negative electrode in opposite directions; Permanent magnet is positioned at the below of described negative electrode, is used to produce magnetic field; And rotating control assembly, be axle with the center of target, make described permanent magnet rotation, it is characterized in that:
The Wedge gripping that between described rotating control assembly and described permanent magnet, has the tilt angle theta of regulation,
Described permanent magnet comprises: the bottom, contact with the top of described Wedge gripping, and be used for fixing magnet; First permanent magnet is fixed on the described bottom, and it is positioned at than the position that tilts, below more, the center of described target; With second permanent magnet of toroidal, be fixed in the end of described bottom, around described first permanent magnet, polar polarity is opposite with the polarity of described first permanent magnet, and magneticstrength than described first permanent magnet a little less than.
CNB2004100054597A 2003-09-30 2004-02-19 Magnetic control sputtering device Expired - Fee Related CN100549220C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34125/2003 2003-09-30
JP2003341258A JP4470429B2 (en) 2002-09-30 2003-09-30 Magnetron sputtering equipment

Publications (2)

Publication Number Publication Date
CN1603456A CN1603456A (en) 2005-04-06
CN100549220C true CN100549220C (en) 2009-10-14

Family

ID=34674772

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100054597A Expired - Fee Related CN100549220C (en) 2003-09-30 2004-02-19 Magnetic control sputtering device

Country Status (2)

Country Link
KR (1) KR100585578B1 (en)
CN (1) CN100549220C (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100460557C (en) * 2005-09-28 2009-02-11 中芯国际集成电路制造(上海)有限公司 Method and system for operating physical gas-phase deposition
CN101180417B (en) * 2005-10-18 2010-12-08 株式会社爱发科 Sputtering apparatus and film forming method
KR100793356B1 (en) * 2005-12-13 2008-01-11 삼성에스디아이 주식회사 sputtering equipment
JP5461264B2 (en) 2010-03-25 2014-04-02 キヤノンアネルバ株式会社 Magnetron sputtering apparatus and sputtering method
KR101250311B1 (en) * 2012-01-11 2013-04-03 (주)이루자 Sputtering apparatus and methods of manufacturing substrate for electronic device and organic light emitting diode using the same
JP7203490B2 (en) * 2017-09-29 2023-01-13 昭和電工株式会社 Magnetic sensor assembly and magnetic sensor assembly manufacturing method
CN112955579A (en) * 2018-11-14 2021-06-11 应用材料公司 Tilted magnetron in PVD sputter deposition chamber

Also Published As

Publication number Publication date
CN1603456A (en) 2005-04-06
KR20050031848A (en) 2005-04-06
KR100585578B1 (en) 2006-06-07

Similar Documents

Publication Publication Date Title
CN100549220C (en) Magnetic control sputtering device
CN102500908A (en) Welding method of tungsten target assembly
TWI287048B (en) Equipment for cathode-sputtering
US5133850A (en) Sputtering cathode for coating substrates in cathode sputtering apparatus
US20050274610A1 (en) Magnetron sputtering apparatus
JP2010100930A (en) Cylindrical sputtering target, and method for manufacturing the same
US8231767B2 (en) Magnetic field generating apparatus and plasma processing apparatus
CN102366856A (en) Welding method of cobalt target assembly
JP2014500398A (en) Soft sputtering magnetron system
US6334405B1 (en) Vacuum arc evaporation source and vacuum arc vapor deposition apparatus
US6160350A (en) Ion plating apparatus
TWI658752B (en) Magnetron, magnetron sputtering chamber and magnetron sputtering device
CN1119552A (en) Sputtering apparatus
CN101445915A (en) Sputtering apparatus and sputtering method
JP4470429B2 (en) Magnetron sputtering equipment
JP2005336520A (en) Magnetron sputtering device
CN104968829B (en) Sputtering device
JP2008156732A (en) Magnetron sputtering system and film deposition method using the same
JPH03170668A (en) Plate magnetron sputtering device
JP2008297577A (en) Magnetron sputtering device
JPWO2018101444A1 (en) Magnetron sputtering apparatus and magnetic field forming apparatus
JP4455689B2 (en) Magnetron cathode of sputtering equipment
JP2005008917A (en) Cathode for magnetron sputtering equipment
JP2013127125A (en) Ganged scanning of multiple magnetrons, especially two level folded magnetrons
JP2002069637A (en) Magnetron sputtering device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091014

Termination date: 20140219