CN100552969C - Organic light-emitting display device electrode substrate - Google Patents
Organic light-emitting display device electrode substrate Download PDFInfo
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- CN100552969C CN100552969C CNB2006100981421A CN200610098142A CN100552969C CN 100552969 C CN100552969 C CN 100552969C CN B2006100981421 A CNB2006100981421 A CN B2006100981421A CN 200610098142 A CN200610098142 A CN 200610098142A CN 100552969 C CN100552969 C CN 100552969C
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Abstract
The invention discloses a kind of organic light-emitting display device electrode substrate, it comprises substrate body, electrode layer, conductor layer and protective layer; Also be provided with transition zone between conductor layer and the protective layer, described transition zone is a semiconducting compound, and protective layer is one or more the laminated construction in aluminium oxide, silica, IZO, silicon nitride, the silicon oxynitride.The present invention utilizes conductor layer material applicating property such as the alloy, mixture of semiconducting compound and silver, copper, aluminum metal or argentiferous, copper, aluminium good; and and also has the characteristic of very strong tackness between the ceramic material such as aluminium oxide, silica, IZO, silicon nitride, silicon oxynitride; make the problem of the tack difference that exists between easily oxidized conductor layer and ceramic material protective layer, obtained good solution.
Description
Technical field
The present invention relates to a kind of electrode base board, relate in particular to a kind of organic light-emitting display device electrode substrate.
Background technology
A series of advantages such as emerging in recent years display of organic electroluminescence has from main light emission, low-voltage DC driven, solidifies entirely, the visual angle is wide, color is abundant, compare with LCD, OLED does not need backlight, the visual angle is big, power is low, and its response speed can reach 1000 times of LCD, and manufacturing cost but is lower than the LCD of equal resolution, therefore, display of organic electroluminescence certainly will have broad application prospects.
The structure of the employed electrode base board of OLED display screen comprises substrate, electrode layer, conductor layer.The material that is used for substrate has glass, plastics etc.; Electrode layer is positioned on the substrate, and used material has ITO, IZO, ZnO etc., and these materials have characteristic transparent and conduction simultaneously, but these material conductances are not high, and electric current can produce a large amount of Joule heats through out-of-date, the luminous efficiency of influence screen body; Conductor layer is positioned on the electrode layer, is used to reduce the resistance of the resistance of electrode layer, particularly lead district, to improve the efficient of whole screen body.Use at present conductor layer material more widely is refractory metal materials such as chromium, molybdenum, and based on the requirement of further reduction resistance, silver, aluminium, the contour electrical conductivity materials of copper also are used as the conductor layer material gradually, and show stronger practicality.But silver, copper etc. are not strong to atmosphere resistances such as sulphur, ammonia, chlorine and oxygen, the aluminium lamination material easily and soda acid react, and needle pore defect appears in film easily in preparation process, use for a long time can cause lead tunic deterioration, resistance rises, and then makes the luminous efficiency of screen body descend.Thereby numerous protective layer structures is used as the protective layer structure of conductor layer such as ceramic materials such as aluminium oxide, silica, IZO, silicon nitride, silicon oxynitrides, in order to improve conductor layer stability in use.
But in the device of this structure, adhesive force is not strong between conductor layer film and this class ceramic material, and the protective layer ceramic material easily comes off from the conductor layer film, thereby makes the conductor layer film be directly exposed in the external environment, still is subjected to the erosion of elements such as sulphur, oxygen.
Summary of the invention
The object of the present invention is to provide a kind of binding ability that can improve easily oxidized conductor layer and its protective layer, thereby obviously improve the organic light-emitting display device electrode substrate in substrate lead performance and useful life.
The objective of the invention is to be achieved by the following technical programs: it comprises substrate body, electrode layer, conductor layer and protective layer; It is characterized in that also be provided with transition zone between described conductor layer and the protective layer, described transition zone is a semiconducting compound.
Described transition zone is preferably selected one or more the stepped construction in zinc sulphide, tin ash or the tungsten oxide for use.。
Described transition region thickness is 1nm～20nm.
Described protective layer is one or more the laminated construction in the ceramic materials such as aluminium oxide, silica, IZO, silicon nitride, silicon oxynitride.
The thickness of described protective layer is 1nm～20nm.
The material of described conductor layer is silver metal, silver alloy, contain the mixture of silver metal, copper metal, copper alloy, the mixture that contains the copper metal, aluminum metal, aluminium alloy or contain the mixture of aluminum metal.
Described conductor layer thickness is 100nm～600nm.
The present invention utilizes conductor layer material applicating property such as the alloy, mixture of semiconducting compound and silver, copper, aluminum metal or argentiferous, copper, aluminium good; and and also has the characteristic of very strong tackness between the ceramic material such as aluminium oxide, silica, IZO, silicon nitride, silicon oxynitride; make the problem of the tack difference that exists between easily oxidized conductor layer and ceramic material protective layer, obtained good solution.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1～3;
Fig. 2 is the structural representation of Comparative Examples 1.
Embodiment
The present invention will be further described below in conjunction with drawings and Examples.
Comparative Examples 1
With reference to Fig. 2.The organic light emitting display substrate of this Comparative Examples comprises substrate body 1, electrode layer 2, conductor layer 3 and protective layer 4.Implementation process is as follows:
On glass substrate 1, adopt the method for sputter to prepare ITO electrode layer 2, film thickness is 180nm; Thereafter, adopt the method for sputter to prepare silver-colored conductor layer 3 thereon, film thickness is 160nm; The protective layer of alumina 4 for preparing 8nm at last.
Resulting electrode base board sheet resistance is 0.10ohm/sq, and 80 degrees centigrade were heated 30 minutes down, and sheet resistance is 0.11ohm/sq, and resistance variations is less than 15% before and after the heating; 120 degrees centigrade down heating is after 30 minutes, and sheet resistance is 0.30ohm/sq, and heating front and rear surfaces resistance has increased by 2 times, and to can be observed resistance variations at microscopically be because due to come off appear in protective layer 4.
With reference to Fig. 1.The organic light emitting display substrate of present embodiment comprises substrate body 1, electrode layer 2, conductor layer 3, transition zone 5 and protective layer 4.Implementation process is as follows:
On glass substrate 1, adopt the method for sputter to prepare ITO electrode layer 2, film thickness is 180nm; Thereafter, adopt the method for sputter to prepare silver-colored conductor layer 3 thereon, film thickness is 160nm; Before preparation protective layer 4, prepare zinc sulphide transition zone 5 with the method for sputter, THICKNESS CONTROL is 6nm.On zinc sulphide transition zone 5, prepare the protective layer of alumina 4 of 8nm at last.
Resulting electrode base board sheet resistance is 0.10ohm/sq, 80 degrees centigrade were heated 30 minutes down, sheet resistance is 0.11ohm/sq, 120 degrees centigrade are heated after 30 minutes down, sheet resistance is 0.12ohm/sq, place sheet resistance under the different temperatures and change, present good stable all less than 20%.
With reference to Fig. 1.The organic light emitting display substrate of present embodiment comprises substrate body 1, electrode layer 2, conductor layer 3, transition zone 5 and protective layer 4.Implementation process is as follows:
On glass substrate 1, adopt the method for sputter to prepare ITO electrode layer 2, film thickness is 150nm; Thereafter, adopt the method for sputter to prepare aluminium/molybdenum conductor layer 3 thereon, film thickness is 5nm/300nm; Before preparation protective layer 4, prepare tin ash transition zone 5 with the method for sputter, THICKNESS CONTROL is 8nm.On tin ash transition zone 5, prepare the silica protective layer 4 of 10nm at last.
Resulting electrode base board sheet resistance is 0.30ohm/sq, 80 degrees centigrade were heated 30 minutes down, sheet resistance is 0.32ohm/sq, 120 degrees centigrade are heated after 30 minutes down, sheet resistance is 0.35ohm/sq, place sheet resistance under the different temperatures and change, present good stable all less than 17%.
With reference to Fig. 1.The organic light emitting display substrate of present embodiment comprises substrate body 1, electrode layer 2, conductor layer 3, transition zone 5 and protective layer 4.Implementation process is as follows:
On glass substrate 1, adopt the method for sputter to prepare ITO electrode layer 2, film thickness is 200nm; Thereafter, adopt the method for sputter to prepare copper conductor layer 3 thereon, film thickness is 250nm; Before preparation protective layer 4, prepare tungsten oxide transition zone 5 with the method for sputter, THICKNESS CONTROL is 10nm.On tungsten oxide transition zone 5, prepare the silica protective layer 4 of 10nm at last.
Resulting electrode base board sheet resistance is 0.50ohm/sq, 80 degrees centigrade were heated 30 minutes down, sheet resistance is 0.52ohm/sq, 120 degrees centigrade are heated after 30 minutes down, sheet resistance is 0.60ohm/sq, place sheet resistance under the different temperatures and change, present good stable all less than 20%.
Though more than described most preferred embodiment of the present invention, technical scope of the present invention is not limited to the scope of above-mentioned discussion.The above-mentioned embodiment that provides just only is used for further explaining the present invention on the basis of summary of the invention.It should be understood that those skilled in the art can make multiple improvement to said process, but this all class improvement belongs to all in the scope of the present invention also.
Claims (5)
1. organic light-emitting display device electrode substrate, it comprises substrate body, electrode layer, conductor layer and protective layer; It is characterized in that the material of described conductor layer is silver metal, silver alloy, contain the mixture of silver metal, copper metal, copper alloy, the mixture that contains the copper metal, aluminum metal, aluminium alloy or contain the mixture of aluminum metal; Also be provided with transition zone between described conductor layer and the protective layer, described protective layer is a ceramic material, and described transition zone is a zinc sulphide.
2. organic light-emitting display device electrode substrate according to claim 1 is characterized in that, described transition region thickness is 1nm～20nm.
3. organic light-emitting display device electrode substrate according to claim 1 is characterized in that, described protective layer is one or more the laminated construction in aluminium oxide, silica, IZO, silicon nitride, the silicon oxynitride.
4. organic light-emitting display device electrode substrate according to claim 3 is characterized in that, described protective layer thickness is 1nm～20nm.
5. organic light-emitting display device electrode substrate according to claim 1 is characterized in that, described conductor layer thickness is 100nm～600nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100981421A CN100552969C (en) | 2006-11-30 | 2006-11-30 | Organic light-emitting display device electrode substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100981421A CN100552969C (en) | 2006-11-30 | 2006-11-30 | Organic light-emitting display device electrode substrate |
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| CN1971935A CN1971935A (en) | 2007-05-30 |
| CN100552969C true CN100552969C (en) | 2009-10-21 |
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| CNB2006100981421A Active CN100552969C (en) | 2006-11-30 | 2006-11-30 | Organic light-emitting display device electrode substrate |
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