CN100552996C - White light emitting device - Google Patents
White light emitting device Download PDFInfo
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- CN100552996C CN100552996C CN 200710007312 CN200710007312A CN100552996C CN 100552996 C CN100552996 C CN 100552996C CN 200710007312 CN200710007312 CN 200710007312 CN 200710007312 A CN200710007312 A CN 200710007312A CN 100552996 C CN100552996 C CN 100552996C
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- light
- fluorescent material
- white light
- emitting device
- light emitting
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- Y02B20/181—
Abstract
A kind of white light emitting device, this light-emitting device comprises light-emitting component, nitride fluorescent material and nitrogen oxide fluorescent material.Light-emitting component is to be used to produce first coloured light with first wave-length coverage.Nitride fluorescent material and nitrogen oxide fluorescent material coat this light-emitting component, after this two fluorescent material is excited by first coloured light, have second coloured light of second wave-length coverage and the 3rd coloured light with wavelength range with producing respectively.First coloured light, second coloured light and the 3rd coloured light mix formation one white light.In present specification, also disclose a kind of white light emitting diode.
Description
Technical field
The relevant a kind of light-emitting device of the present invention, and particularly relevant a kind of white light emitting device.
Background technology
White light emitting diode is used for various lighting apparatus and Backlight For Liquid Crystal Display Panels gradually because to have a power saving, low driving voltage, life-span long and have advantage such as environment protecting, becomes one of at present important light-emitting device.
Wherein a kind of manufacture method of present existing white light emitting diode adds yellow fluorescent material for using the blue light emitting element, in order to produce white light.The white light efficient that the method produced is pretty good, but shortcoming is that color rendering difference and color saturation are not good, and can present the phenomenon of chromaticity coordinates over-deflection under high electric current.Because in the use of Backlight For Liquid Crystal Display Panels and some lighting apparatus, quite strict for the requirement of color, the above-mentioned shortcoming of mentioning will make the demonstration and the illuminating effect of LCD and lighting apparatus descend.Therefore, a kind of still have a good color stability under the different operating electric current, and the white light emitting device that has preferable color rendering and color saturation simultaneously is that present industrial quarters is required.
Summary of the invention
Therefore, the present invention proposes a kind of white light emitting device that under different operating currents, all has good color stability.
Propose a kind of white light emitting device according to an aspect of the present invention, this light-emitting device comprises light-emitting component, nitride fluorescent material and nitrogen oxide fluorescent material.Light-emitting component is to be used to produce first coloured light with first wave-length coverage.Nitride fluorescent material and nitrogen oxide fluorescent material coat this light-emitting component, after this two fluorescent material is excited by first coloured light, have second coloured light of second wave-length coverage and the 3rd coloured light with wavelength range with producing respectively.First coloured light, second coloured light and the 3rd coloured light mix formation one white light.Wherein the chemical formula of this nitride fluorescent material is Ca
xSi
yN
3: Ce, and 0＜(x, y)＜4; The chemical formula of this nitrogen oxide fluorescent material is Sr
2-2xSiO
4-yN
y: Eu, and 0＜x＜1,0＜y＜4.
A kind of white light emitting diode is proposed according to a further aspect of the invention.This white light emitting diode comprises light-emitting component, nitride fluorescent material and nitrogen oxide fluorescent material.Light-emitting component is to be used to produce the blue light with first wave-length coverage.Nitride fluorescent material and nitrogen oxide fluorescent material coat this light-emitting component, and this two fluorescent material is made up of the nitride of ce metal activation and the nitrogen oxide of europium metal activation respectively.And, when these two kinds of fluorescent materials be subjected to blue-light excited after, produce respectively and have the ruddiness of second wave-length coverage and green glow with wavelength range.Aforesaid blue light, ruddiness and green glow mix formation one white light.Wherein the chemical formula of this nitride fluorescent material is Ca
xSi
yN
3: Ce, and 0＜(x, y)＜4; The chemical formula of this nitrogen oxide fluorescent material is Sr
2-2xSiO
4-yN
y: Eu, and 0＜x＜1,0＜y＜4.
Above-mentioned white light emitting device of the present invention, under different operating currents, the deviation of color can't appear because of the change of operating current in light-emitting device.And, the color rendering index of aforesaid white light emitting device (colorrendering index; CRI), has good color rendering more than 90.In addition, the white light emitting device that uses the three primary colors collocation to form among the present invention, when in order to as the backlight of display the time, its color saturation can reach 68%, and the color saturation of the display of the backlight of existing blue light wafer collocation yellow fluorescent material made comes highly.
Description of drawings
For above-mentioned and other purposes, feature, advantage of the present invention can be become apparent, it is as follows now will to be elaborated to preferred embodiment of the present invention in conjunction with the accompanying drawings, wherein:
Fig. 1 is the sectional structure chart that shows the white light emitting device of one embodiment of the invention.
Fig. 2 is the emission spectrum that shows white light emitting device each coloured light under the direct current operating current of 20 milliamperes of one embodiment of the invention.
Fig. 3 is the change curve of the chromaticity coordinates of the white light emitting device described in the displayed map 2 under different operating currents.
Embodiment
Fig. 1 is the sectional structure chart that shows the white light emitting device of one embodiment of the invention.In Fig. 1, white light emitting device 100 is made of a light-emitting component 104 and a packing colloid 108.Packing colloid 108 has nitride fluorescent material and nitrogen oxide fluorescent material is scattered in wherein, and this two fluorescent material is made up of nitride and nitrogen oxide respectively.In addition, light-emitting component has a packing bearing seat 102 for 104 times.Have at least one lead 106 to electrically connect packing bearing seat 102 and light-emitting component 104 between packing bearing seat 102 and light-emitting component 104, it is luminous to carry out to make light-emitting component 104 receive the extraneous voltage that applies by lead 106.
In the aforementioned embodiment, light-emitting component is to be used to produce first coloured light with first wave-length coverage.First coloured light can be used for exciting nitride fluorescent material and nitrogen oxide fluorescent material, makes it produce second coloured light with second wave-length coverage and the 3rd coloured light with wavelength range respectively.By the mixing of first, second and the 3rd coloured light, can make white light emitting device 100 further produce white lights.In one embodiment, this white light emitting device 100 is a white light emitting diode.
The first above-mentioned coloured light can be a blue light, and first wave-length coverage is about 360nm～480nm.Second coloured light can be a ruddiness, and second wave-length coverage is about 560nm～760nm.The 3rd coloured light can be a green glow, and wavelength range is about 490nm～660nm.
Above-mentioned light-emitting component can be semiconductor element, and this semiconductor element is the polynary complex chemical compound of III-V family element.Above-mentioned nitride fluorescent material for example can be the nitride of ce metal activation, as Ca
xSi
yN
3: Ce (0＜(x, y)＜4) or CaSiN2:Ce (excitation wavelength is about 300nm～500nm).Nitrogen oxide fluorescent material for example can be the nitrogen oxide of europium metal activation, as Sr
2-2xSiO
4-yN
y: Eu (0＜x＜1,0＜y＜4) or SrSi
2O
2N
2: (excitation wavelength is about 350nm～480nm) to Eu.
Fig. 2 is the emission spectrum that shows white light emitting device each coloured light under the direct current operating current of 20 milliamperes (mA) of one embodiment of the invention.Wherein (a) figure is a kind of blue spectrum of being made up of III-V family element that semiconductor light-emitting elements radiated, and its radioactive wave is grown up and is about 430nm～480nm.(b) figure is aforesaid nitrogen oxide fluorescent material SrSi
2O
2N
2: the spectrum that Eu is radiated by blue-light excited back, its radioactive wave is grown up and is about 480nm～660nm, is a kind of green spectrum.At the spectrum that 430nm～480nm occurred is the radiation blue spectrum of its excitation source.(c) figure is aforesaid nitride fluorescent material CaSiN
2: the spectrum that Ce is radiated by blue-light excited back, its radioactive wave is grown up and is about 560nm～780nm, is a kind of red-light spectrum.Described as (b) figure, be the radiation blue spectrum of its excitation source at the spectrum that 430nm～480nm occurred.(d) figure is that the spectrum of aforementioned three kinds of colors mixes formed white-light spectrum, and its radioactive wave is grown up and is about 430nm～780nm.
Fig. 3 is the change curve of the chromaticity coordinates of the white light emitting device described in Fig. 2 under different operating currents.On behalf of the do not carry out preceding blue light of photochromic mixing, green glow, ruddiness and the three primary colors that white light emitting device radiated, a, b, c, d mix the white light that the back is produced respectively.Under different operating currents, the variation of the chromaticity coordinates of the light of each color is quite gentle, can find out that thus this white light emitting device has good color stability, and its chromaticity coordinates can't produce significantly skew along with the variation of operating current.
Table one has further disclosed the variation of the color stable degree of white light under different operating currents of the white light emitting device described in Fig. 2.By in the table one, when electric current rises to 60mA by 5mA, its chromaticity coordinates, colour temperature and color rendering index (color rendering index; CRI) all present the performance of quite stable.For example the variation of its color rendering index only is about 2.1%, and the variation of its colour temperature more is lower than 1.5%.
Table one: the variation of the color stable degree of white light under the different operating electric current
By the above embodiment of the present invention as can be known, the described white light emitting device of the embodiment of the invention, under different operating currents, its chromaticity coordinates, colour temperature and color rendering index all have good stable.In other words, when this white light emitting device needed to use under different operating currents, the deviation of color can't appear because of the change of operating current in this light-emitting device.In addition, the color rendering index of aforesaid white light emitting device (color rendering index; CRI) more than 90, and the CRI of existing white light-emitting diodes only is about 80, and in comparison, the white light emitting device of the embodiment of the invention has better color rendering.In addition, the white light emitting device that uses the three primary colors collocation to form in the embodiment of the invention, when in order to as the backlight of display the time, its color saturation can reach 68%, and the color saturation of the display of the backlight of existing blue light wafer collocation yellow fluorescent material made comes highly.
Though the present invention discloses as above with embodiment; yet it is not in order to limit the present invention; any person skilled in the art person without departing from the spirit and scope of the present invention; when can doing various changes that are equal to and retouching, so protection scope of the present invention is when looking accompanying being as the criterion that the application's claim scope defined.
Claims (13)
1. white light emitting device comprises:
A light-emitting component, this light-emitting component are used to produce one first coloured light with one first wave-length coverage;
A kind of nitride fluorescent material coats this light-emitting component, after this nitride fluorescent material is excited by this first coloured light, produces one second coloured light with one second wave-length coverage, and wherein the chemical formula of this nitride fluorescent material is Ca
xSi
yN
3: Ce, and 0＜(x, y)＜4; And
A kind of nitrogen oxide fluorescent material, coat this light-emitting component, after this nitrogen oxide fluorescent material is excited by this first coloured light, generation has one the 3rd coloured light of a wavelength range, the 3rd coloured light mixes formation one white light with this second coloured light and this first coloured light, wherein the chemical formula of this nitrogen oxide fluorescent material is Sr
2-2xSiO
4-yN
y: Eu, and 0＜x＜1,0＜y＜4.
2. white light emitting device as claimed in claim 1 is characterized in that this first coloured light is blue light.
3. white light emitting device as claimed in claim 1 is characterized in that this light-emitting component is a semiconductor element, and this semiconductor element is the polynary complex chemical compound of III-V family element.
4. white light emitting device as claimed in claim 1 is characterized in that this first wave-length coverage is 360nm～480nm.
5. white light emitting device as claimed in claim 1 is characterized in that this second coloured light is ruddiness.
6. white light emitting device as claimed in claim 1 is characterized in that this second wave-length coverage is 560nm～760nm.
7. white light emitting device as claimed in claim 1 is characterized in that the 3rd coloured light is green glow.
8. white light emitting device as claimed in claim 1 is characterized in that this wavelength range is 490nm～660nm.
9. white light emitting diode comprises:
A light-emitting component, this light-emitting component are to be used to produce the blue light with one first wave-length coverage;
A kind of nitride fluorescent material, coat this light-emitting component, this nitride fluorescent material is the nitride of ce metal activation, after this nitride fluorescent material is subjected to this blue-light excited, generation has the ruddiness of one second wave-length coverage, and wherein the chemical formula of this nitride fluorescent material is Ca
xSi
yN
3: Ce, and 0＜(x, y)＜4; And
A kind of nitrogen oxide fluorescent material, coat this light-emitting component, this nitrogen oxide fluorescent material is the nitrogen oxide of an europium metal activation, after this nitrogen oxide fluorescent material is subjected to this blue-light excited, generation has the green glow of a wavelength range, this green glow and this ruddiness and this blue light form a white light, and wherein the chemical formula of this nitrogen oxide fluorescent material is Sr
2-2xSiO
4-yN
y: Eu, and 0＜x＜1,0＜y＜4.
10. white light emitting diode as claimed in claim 9 is characterized in that this light-emitting component is a semiconductor element, and this semiconductor element is the polynary complex chemical compound of III-V family element.
11. white light emitting diode as claimed in claim 9 is characterized in that this first wave-length coverage is 360nm～480nm.
12. white light emitting diode as claimed in claim 9 is characterized in that this second wave-length coverage is 560nm～760nm.
13. white light emitting diode as claimed in claim 9 is characterized in that this wavelength range is approximately 490nm～660nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84094606P | 2006-08-30 | 2006-08-30 | |
| US60/840,946 | 2006-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101136446A CN101136446A (en) | 2008-03-05 |
| CN100552996C true CN100552996C (en) | 2009-10-21 |
Family
ID=39160391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710007312 Expired - Fee Related CN100552996C (en) | 2006-08-30 | 2007-01-19 | White light emitting device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN100552996C (en) |
| TW (1) | TW200812109A (en) |
-
2007
- 2007-01-11 TW TW96101133A patent/TW200812109A/en unknown
- 2007-01-19 CN CN 200710007312 patent/CN100552996C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101136446A (en) | 2008-03-05 |
| TW200812109A (en) | 2008-03-01 |
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Granted publication date: 20091021 Termination date: 20110119 |