CN100557828C - Method for manufacturing white light diode - Google Patents
Method for manufacturing white light diode Download PDFInfo
- Publication number
- CN100557828C CN100557828C CNB2004100524662A CN200410052466A CN100557828C CN 100557828 C CN100557828 C CN 100557828C CN B2004100524662 A CNB2004100524662 A CN B2004100524662A CN 200410052466 A CN200410052466 A CN 200410052466A CN 100557828 C CN100557828 C CN 100557828C
- Authority
- CN
- China
- Prior art keywords
- wafer
- white light
- substrate
- groove
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A kind of method for manufacturing white light diode, described white light-emitting diodes comprises support, housing, wafer, substrate and lead, wafer places on the substrate, at the end face of wafer with to produce layer of even phosphor powder film layer: a. all around deployed with fluorescent material and epoxy resin; B., one tool is set, and this tool comprises at least one groove, this groove comprise with described substrate sizable be positioned at the top can be used for hold described substrate ground floor and than described wafer bigger be positioned at the below the second layer that can be used for holding described wafer; The material that the step a of appropriate amount is deployed joins the second layer of described groove, c. with wafer down, substrate places in the described groove up, and wafer is immersed in the deployed material of described step a fully; D. take out the oven dry back.Adopt this manufacture method, manufacturing cost is lower, and the white light-emitting diodes of producing, and uniformity and consistency that it is luminous are fine, and launching efficiency and luminosity are all high.
Description
Technical field
The present invention relates to method, semi-conductor device manufacturing method, relate in particular to the diode fabricating method that emits white light.
Background technology
The white light LEDs of prior art (light-emitting diode), manufacture method has multiple, wherein a kind of lower-cost method commonly used is to adopt blue light, purple light or ultraviolet excitation RGB (RGB) fluorescent material obtain white light, for example the blue light wafer adds the mode of YAG (yttrium-aluminium-garnet) fluorescent material, such as at Chinese patent application 200310120736 disclosed a kind of surface installing type white light-emitting diodes, Chinese patent ZL 02100345 disclosed a kind of high-brightness nitride light-emitting diode and preparation method thereof, and the manufacture method of Chinese patent application 01141509 disclosed a kind of white light-emitting diode.
The basic wafer of existing employing is luminous, adopt fluorescent coating that wafer is sent out light former and carry out colour mixture, in the manufacture method that makes white light-emitting diode, coating phosphor powder layer how, feasible white light efficient height, the high conformity that sends is a quite crucial technical process.In actual production process, usually adopt fluorescent material is mixed with liquid state, above wafer, add the mode of fluorescent material cover wafers, therefore the precipitation of fluorescent material is difficult to control evenly, its easy mobility causes the hot spot effect of finished product LED bad, and consistency is bad during batch process, and wherein most of fluorescent material is deposited to the side-lower of wafer, to luminous not contribution, cause serious waste; In applicant's Chinese patent application 200410026720 formerly a kind of method for manufacturing white light diode has been proposed, be that prefabricated fluorescent material thin slice is placed on the luminescent crystal, improving the deficiency of above-mentioned existing technology, but also there is a weak point in this process: the side does not have fluorescent material to cover around the luminescent crystal.A kind of package structure for LED and method thereof are disclosed in Chinese patent application 02128670, it is by a default depression in condenser, in this depression, splash into fluorescent powder colloid, again luminescent crystal is inserted the packing forms that this depression forms light-emitting diode and fluorescent powder colloid, its benefit is that the shape of depression can design as required, thereby the architectural characteristic of the last phosphor laminate that forms is controlled.Obviously, also there is its deficiency in this method: require condenser moulding in advance, and fluorescent powder colloid curing molding in this condenser, also can have influence on curing process.
How around luminescent crystal, to form uniform fluorescent coating, with produce luminous evenly and the white light-emitting diodes of high conformity, and reduce the consumption of fluorescent material as far as possible and simplify the curing process of phosphor laminate, to reduce production costs, prior art does not provide good solution.
Summary of the invention
The technical problem to be solved in the present invention is the uniformity of the fluorescent material that covers on the control wafer, and simplified manufacturing technique, and luminous uniformity and the consistency of each LED to guarantee to produce in batches out reduces production costs simultaneously.
The technical scheme that the present invention solves the problems of the technologies described above employing is, a kind of method for manufacturing white light diode is proposed, described white light-emitting diodes comprises support, housing, wafer, substrate and lead, described wafer places on the substrate, and at the end face of described wafer with produce the layer of even phosphor powder film layer all around, this manufacture process comprises step:
A. fluorescent material and transparent colloid is deployed;
B., one tool is set, and this tool comprises at least one groove, this groove comprise with described substrate sizable be positioned at the top can be used for hold described substrate ground floor and than described wafer bigger be positioned at the below the second layer that can be used for holding described wafer; The material that the step a of appropriate amount is deployed joins the second layer of described groove,
C. down, substrate places in the described groove up, and wafer is immersed in the deployed material of described step a fully with wafer;
D. take out oven dry back, then above the wafer and cover the fluorescent powder membrane that one deck solidifies all around equably.
Need to prove: described wafer places and is meant on the substrate that wafer protrudes from the substrate.
Described wafer is blue light or purple light wafer.
Described fluorescent material comprises yttrium aluminum garnet material.
Described transparent colloid comprises epoxy resin.
Compare with prior art, adopt method for manufacturing white light diode of the present invention, technology is simple, and production cost is lower, and produced white light-emitting diodes, and uniformity and consistency that it is luminous are fine, have the launching efficiency height, the advantage that luminosity is high.
Description of drawings
The LED structure master pseudosection of Fig. 1 for adopting method for manufacturing white light diode of the present invention to produce.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is a flip chip bonding led chip structure master pseudosection.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 A to 5C is the schematic diagram of three steps in the manufacture method of the present invention.
Fig. 6 is the vertical view of used jig structure in the manufacture method of the present invention.
Embodiment
Be described in further detail below in conjunction with the most preferred embodiment shown in each accompanying drawing.
White light LEDs as Fig. 1 produces to employing method for manufacturing white light diode of the present invention shown in Figure 6 comprises support 10, housing 20, wafer 60, substrate 30 and lead 50, and at the end face of described wafer 60 with fluorescent powder membrane 40 is set all around.
Described wafer 60 is an example with the high-power flip chip bonding wafer of blue light, the flip chip bonding chip architecture as shown in Figure 3, it is on silicon chip 30, blue light wafer 60 is inverted be welded on the substrate 30, makes on wafer 60 exiting surfaces not have the electrode shading, has improved light extraction efficiency.
It is example that described fluorescent material cooperates the fluorescent material of jaundice light with the blue-ray LED wafer, this compound mode of the many employings of present commercial white light LEDs, and the fluorescent material of employing is the yttrium-aluminium-garnet (being called for short YAG:Ce) that cerium activates.
Described tool 70, be the production mould among the present invention, its structure as illustrated in Figures 5 and 6, the ground floor groove that surrounds by the end 73 and sidewall 74 above wherein and the sizableness of wafer substrate, play the effect of location, be provided with the second layer groove that is surrounded by the end 71 and sidewall 72 in the big groove, the size of this second layer groove has: depth H is the thickness d that the height h of wafer adds fluorescent powder membrane, and width L is the thickness d that the length of side 1 of square wafer adds fluorescent powder membrane.
White light LEDs step of manufacturing of the present invention is as shown in Figure 5:
A. fluorescent material and epoxy resin is deployed;
B. deployed material is poured in several little grooves of tool, the amount that the pouring volume in each tool needs for fluorescent powder membrane thickness, volume is: V=L
2H-1
2H;
C. down, substrate is put into groove up, and wafer is immersed in the mixing material of fluorescent material and epoxy resin fully with wafer;
D. after finishing the C step,, put it in the baking oven baking; 60 ℃, take out epoxy resin cure after 30 minutes; Above mould takes out the wafer that wafer obtains and cover one deck all around equably and solidify fluorescent powder membrane;
E. it is contained on the support 10, and welding lead 50,20, one complete white light LEDs manufacturings as shown in Figure 1 of encapsulating housing are finished again, and luminous even, and it is fine to produce consistency in batches.
The most preferred embodiment of the above is intended to specify thinking of the present invention: the processing step that covers liquid fluorescent material above wafer in the white light LEDs production process, change the process of upside-down mounting fluorescent material cover wafers into, with the uniformity of luminance that guarantees LED and the consistency of batch process, and greatly reduce the use cost of fluorescent material.The present invention's enforcement is not limited to the disclosed mode of above most preferred embodiment, and is all based on above-mentioned mentality of designing, simply deduces and replace, and the concrete white light LEDs manufacture method that obtains all belongs to enforcement of the present invention.
Claims (5)
1, a kind of method for manufacturing white light diode, described white light-emitting diodes comprise support (10), housing (20), substrate (30), wafer (60) and lead (50), and described wafer (60) places on the substrate (30), it is characterized in that:
The end face of described wafer (60) and all around the side produce layer of even phosphor powder film layer (40), described manufacture method comprises step:
A. fluorescent material and transparent colloid is deployed;
B., one tool (70) is set, this tool comprises at least one groove, this groove comprise with described substrate sizable be positioned at the top can be used for hold described substrate ground floor and than described wafer bigger be positioned at the below the second layer that can be used for holding described wafer; The material that the step a of appropriate amount is deployed joins the second layer of described groove,
C. the substrate that is equipped with wafer on it is inverted in the described groove, wafer is surrounded by the deployed material of described step a fully;
D. the substrate that is equipped with wafer on it is taken out in oven dry back, at this moment wafer top surface and promptly cover the fluorescent powder membrane of one deck curing all around equably;
Wherein, described wafer is a square, and the described foursquare length of side is 1, and the height of described wafer is h; The depth H of the second layer of described groove is the thickness d that the height h of wafer adds fluorescent powder membrane, and width L is the thickness d that the length of side 1 of square wafer adds fluorescent powder membrane.
2, method for manufacturing white light diode as claimed in claim 1 is characterized in that: described wafer (60) is the blue light wafer.
3, method for manufacturing white light diode as claimed in claim 1 is characterized in that: described wafer (60) is the purple light wafer.
4, method for manufacturing white light diode as claimed in claim 1 is characterized in that: described transparent colloid comprises epoxy resin.
5, method for manufacturing white light diode as claimed in claim 1 is characterized in that: described fluorescent material comprises yttrium aluminum garnet material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100524662A CN100557828C (en) | 2004-11-24 | 2004-11-24 | Method for manufacturing white light diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100524662A CN100557828C (en) | 2004-11-24 | 2004-11-24 | Method for manufacturing white light diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1783519A CN1783519A (en) | 2006-06-07 |
| CN100557828C true CN100557828C (en) | 2009-11-04 |
Family
ID=36773440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100524662A Expired - Fee Related CN100557828C (en) | 2004-11-24 | 2004-11-24 | Method for manufacturing white light diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100557828C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101436628B (en) * | 2007-11-16 | 2012-01-25 | 广州市鸿利光电股份有限公司 | Technological process for coating fluorescent powder of high-power chip |
| CN101320775B (en) * | 2008-07-21 | 2012-05-23 | 晶能光电（江西）有限公司 | Encapsulation of silicon substrate LED |
-
2004
- 2004-11-24 CN CNB2004100524662A patent/CN100557828C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1783519A (en) | 2006-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5100944B2 (en) | Light emitting semiconductor device with luminescence conversion element | |
| KR101736518B1 (en) | Led with molded reflective sidewall coating | |
| EP2831931B1 (en) | Method for fabricating a luminescent structure | |
| JP5680278B2 (en) | Light emitting device | |
| CN100592538C (en) | Encapsulation method for high-brightness white light LED | |
| CN1913188B (en) | Phosphor-converted LED devices having improved light distribution uniformity and its manufacture method | |
| US9343613B2 (en) | Phosphor in inorganic binder for LED applications | |
| CN101123286A (en) | LED encapsulation structure and method | |
| JP2016167626A (en) | Phosphor conversion led | |
| JP2003234511A (en) | Semiconductor light-emitting device and manufacturing method thereof | |
| CN102800766B (en) | The system and method for semiconductor light emitter is provided | |
| CN101699638A (en) | Phosphor powder film making method and obtained phosphor powder film encapsulating method | |
| CN102723424B (en) | Method for preparing fluorescent wafer for LED (light-emitting diode) | |
| CN1523683A (en) | Light emitting apparatus | |
| CN101388426B (en) | Manufacturing process of light-emitting semiconductor wafer and light-emitting semiconductor component | |
| CN106410022A (en) | Manufacturing method of LED packaging device and the LED packaging device | |
| CN101123285B (en) | Method for encapsulating LED with rotary glue and optical etching technology | |
| CN100557828C (en) | Method for manufacturing white light diode | |
| CN100359705C (en) | Method of mfg. white light LED | |
| CN204230291U (en) | A kind of vertical stratification White-light LED chip of wafer scale | |
| CN101150152A (en) | A making method for white LED chip | |
| CN202712260U (en) | Plane structure white light led chip | |
| CN101510579B (en) | Luminous element and method for producing the same | |
| CN103840057B (en) | Light emitting diode and manufacture method thereof | |
| US8889443B2 (en) | Method of forming light converting layer, method of manufacturing light converting member, and method of manufacturing light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091104 Termination date: 20181124 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |