CN100562805C - 光刻投影装置和器件制作方法 - Google Patents
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Abstract
一种光刻投影装置,辐射系统;支承结构,可支承形成图案机构,可根据希望的图案使所述投影光束形成图案;基片台,可固定保持基片;投影系统,可将形成图案的光束投影到所述基片的目标部分;密封件,位于所述投影系统的终端件下面和周围并包括液体供应系统,液体供应系统可使所述投影系统的终端件和所述基片之间充满液体并且围绕所述投影系统的成像区对基片形成无接触密封;和测量系统,可测量所述基片上各点的位置;其中,所述测量系统在所述液体供应系统之外的单独的测量位置测量所述基片上各点的位置,并且所述密封件底部和所述基片的表面之间形成无接触气体密封,以限制所述液体供应系统中的液体。本发明还提供了一种器件制作方法。
Description
技术领域
本发明涉及一种光刻投影装置,包括:辐射系统,可提供投影光束;支承结构,用来支承图案形成机构,该图案形成机构根据希望的图案使投影光束形成所需要的图案;基片台,用来固定基片;和投影系统,用来将形成图案的光束投射到基片的目标部分;液体供应系统,可使液体充满所述投影系统的终端件和所述基片之间的空间,和测量系统,可测量所述基片上各点的位置。
背景技术
本文使用的术语“图案形成机构”应广义地理解为可用来使入射光束的断面形成图案的装置,该图案对应于在基片目标部分产生的图案;在本文中也可以使用“光阀”这一术语。一般来说,所述图案将对应于在目标部分制造的器件,如集成电路或其它器件(参见下文),的特定功能层。这种图案形成机构的示例包括:
掩模,掩模的概念在光刻法中为大家所熟知,掩模类型包括,如双体、交变相移和衰减相移,以及各种混合的掩模类型。将这样的掩模放置在光束中会使照射到掩模上的光束根据掩模图案产生选择性透射(在透射式掩模的情况下)或选择性反射(在反射式掩模的情况下)。对于掩模来说,支承结构通常是掩模台,可确保掩模固定在入射光束所要求的位置上,而且还可以按要求相对光束移动。
可编程反射镜阵列,这种装置的一个示例是带有粘弹性控制层和反射面的可编址矩阵表面。这种装置的基本原理是(举例来说)反射面的编址区域反射入射光线成为衍射光,而未编址区域反射入射光线成为非衍射光。利用适当的滤光器可以将非衍射光从反射光束中滤出去而只剩下衍射光;通过这种方式,根据可编址矩阵表面的编址图案可以使光束形成图案。可编程反射镜阵列的另一可选择的实施例采用小反射镜矩阵,通过施加适当的局部电场或通过使用压电致动装置可以使每个反射镜单独绕轴线倾斜。同样,反射镜形成可编址矩阵,使编址反射镜沿不同于未编址反射镜的方向反射入射光束;通过这种方式,可以根据可编址矩阵反射镜的编址图案使反射光束形成图案。可以用适当的电子装置来进行所需要的矩阵编址。在上述两种情况中,图案形成装置可以包括一个或多个可编程反射镜阵列。从美国专利US 5,296,891和US 5,523,193以及PCT申请WO 98/38597和WO 98/33096中可以得到更多有关反射镜阵列的信息。本发明引用参考其中的信息。对于可编程反射镜阵列,所述支承结构可以用框架或平台来实现,这种支承结构根据需要可以是固定的或是可移动的。
可编程液晶显示(LCD)阵列,这种结构的一个示例在美国专利US 5,229,872中给出,在此引用参考其内容。同上,这种情况下的支承结构可以用一个框架或平台来实现,根据需要,这种支承结构可以是固定的或是可移动的。
为了简单起见,本文的其余部分可能在某处具体涉及到掩模和掩模台的示例;但是,在这些示例中所讨论的一般原理可用于前述图案形成机构的更广泛范围。
光刻投影装置可以用来制造集成电路(ICs)。在这种情况下图案形成机构可产生对应于单层集成电路的电路图形,且该图形可以在覆盖光敏感材料层(抗蚀膜)的基片(硅晶片,LCD,掩模等)的目标部分(可包含一个或多个片)上成像。一般地,单个晶片将包含相邻目标部分组成的整个电路,这些目标部分依次由投影系统一次一个地照射。在现有的通过掩模台上掩模来形成图案的装置中,可以分为两种不同类型的设备。其中一种是光刻投影装置,通过将整个掩模图案一次曝光到目标部分的方式照射各目标部分,这种装置通常称作晶片步进投影曝光机。在另一种可供选择的通常称作步进扫描机的装置中,每个目标部分是通过在投影光束下沿给定基准方向(扫描方向)逐步扫描掩模图案来照射的,同时沿与此方向相同或相反的方向同步扫描基片台;一般来说,由于投影系统会具有放大系数M(通常<1),所以扫描基片台的速度V应等于系数M乘以扫描掩模台的速度。有关光刻装置的更多信息可以从美国专利US6,046,792中得到,本文引用参考其内容。
使用光刻投影装置进行制作的过程中,图案(比如掩模中的图案)在基片上成像,该基片至少局部由光敏感材料层(抗蚀膜)覆盖。在成像步骤之前,可以对基片进行各种处理,如涂底漆、涂抗蚀膜和软烘焙。在曝光之后,可以对基片进行其它处理,如曝光后烘焙(PEB)、显影、高温烘焙以及对成像特征进行测量/检查。这一系列步骤是形成单层器件,如集成电路,图案的基础。接下来可以对图案层进行各种加工如蚀刻、离子注入(掺杂)、金属化、氧化、化学机械抛光等,所有这些工序都是为了完成单层器件。如果需要若干层,那么对于每个新层整个过程或其变化都必须重复进行。最终,在基片(晶片)上会形成一系列器件。接着利用切割或锯切这样的技术将这些器件相互分开,于是这些单独的器件可以被安装在载体上、连接插脚等等。有关这种工艺的详细资料可以从“微芯片制造:半导体加工实用指南”一书的1997第三版中得到,作者为Peter van Zant,McGraw Hill公司出版,书号为ISBN 0-07-067250-4。在此引用参考其内容。
为了简单起见,投影系统在下面可以称作“透镜”;但是,这一术语应当被广义地理解为包含各种类型的投影系统,比如包括折射光学、反射光学、和反折射光学系统。辐射系统也可以包括根据这些设计类型中的任一种进行操作的部件,以引导、修正或控制投影光束,下面这些部件也可以共同或单独地称作“透镜”。此外,光刻装置可以是带有两个或更多个基片台(和/或两个或更多个掩模台)。在这种“多级”装置中,增加的平台可以并行使用,或者当一个或多个其它平台进行曝光时,可以在一个或多个平台上进行准备步骤。两级光刻装置美国专利US 5,969,441和国际专利申请WO98/40791作了介绍,在此引用参考其内容。
光刻工业领域正在试图减少硅晶片的特征尺寸,以制造出更复杂的集成电路。特征尺寸受到衍射作用的限制,因此波长为λ的数值孔径NA的特定系统的分辨率是:
其中k是前置系数。数值孔径NA为n sinθ。n是透射物质的折射率。
因此,为了降低分辨率,可减小波长或增大数值孔径。建议可将基片浸入具有较高折射率的液体,如水,液体充满投影系统的终端件和基片之间的空间。这样作的目的是使成像具有较小的特征,因为曝光光束在液体中具有较短的波长(液体的作用还可认为是增加系统的有效NA)。
但是,将基片或基片连同基片台浸入液体槽中(可见美国专利4,509,852,本文参考引用其内容)意味着在进行扫描曝光时要对很大体积的液体进行加速。这样就要求另外的电动机或更大功率的电动机,液体中的紊流可导致不希望的和未预见到的后果。
一种提出的解决方案是使液体供应系统向投影系统的终端件和基片之间的局部区域提供液体(基片通常具有比投影系统的终端件大的表面区域)。国际申请WO 99/49504公开了这种方案的一种形式,本文参考引用其内容。如图4和图5所示,液体最好沿基片相对终端件移动的方向通过至少一个入口IN提供到基片上,并在通过投影系统后经至少一个出口OUT排出。即当基片在终端件下沿-X方向进行扫描时,液体在终端件的+X侧提供,在-X侧排出。图4显示了示意性的设置,其中液体通过入口IN供应,在终端件的另一侧通过出口OUT排出,出口OUT连接到低压源。在图4中,液体沿基片相对终端件的移动方向提供,尽管不一定非要这样作。出入口位于终端件周围的各方位和出入口有各种数量都是可能的,在图5中显示的示例有四组入口,入口两侧分别设有出口,通过规则的图案围绕终端件,形成液体腔。
然而,浸入光刻是尚未成熟的技术,在实际应用中仍存在许多问题。本专利申请具体涉及基片的对准和水平。常规的对准和水平校正是在投影系统的视界范围内的基片上进行(即,在曝光位置进行)。但是,在浸液腔范围内或周围没有设置对准或水平测量装置的足够空间,所以适配方面可能很复杂,或者精度可能受到损害。此外,在对准和水平校正装置附近存在液体可能降低装置的性能.
发明内容
本发明的目的是提供一种浸入光刻装置的精确对准和/或水平校正基片的方法和机构。
本发明的这一和其它目的通过在开头部分提到的光刻装置得以实现。即提供一种光刻投影装置,包括:辐射系统,可提供投影光束;支承结构,可支承形成图案机构,所述形成图案机构可根据希望的图案使所述投影光束形成图案;基片台,可固定保持基片;投影系统,可将形成图案的光束投影到所述基片的目标部分;密封件,所述密封件位于所述投影系统的终端件下面和周围并包括液体供应系统,所述液体供应系统可使所述投影系统的终端件和所述基片之间充满液体并且围绕所述投影系统的成像区对基片形成无接触密封;和测量系统,可测量所述基片上各点的位置;其中,所述测量系统在所述液体供应系统之外的单独的测量位置测量所述基片上各点的位置,并且所述密封件底部和所述基片的表面之间形成无接触气体密封,以限制所述液体供应系统中的液体。
所述基片上各点的位置在没有液体的浸入系统外测量。还可以在基片上的目标部分浸入液体时进行测量,即测量通过液体进行。但是液体不是液体供应系统提供的用于充满投影系统的终端元件和基片之间空间的液体。因此测量基片上各点位置时液体位于测量系统和基片之间。液体将在移动基片(和基片台)到投影系统的焦点之前排出,在焦点位置,液体供应系统提供液体充满投影系统的终端元件和基片之间的空间进行曝光。第二液体供应系统可设置在测量系统的附近。
本发明的优点在于,因为测量系统不再位于液体腔范围内和附近,不再干扰投影系统,所以液体腔中有更好的流动,测量系统的性能不再因液体存在而下降。此外,液体腔中平稳的流动条件是必要的,使装置中不会出现导致边缘粗糙的变化。使用这种方法,测量系统不用专门调整以适应浸入光刻技术,测量系统无须复杂的调适就可以使用。本测量系统的另一优点是位于浸入光刻范围外的测量系统的任何改进可容易和自动地结合到浸入系统。
测量系统最好包括对准系统,可测量所述基片的多个对准标记的位置(沿x,y和Rz方向)。根据本发明的实施例,所述基片台带有基准,所述测量系统测量所述基准的位置不通过所述供应系统的液体。对准标记的位置最好相对所述基片台的基准进行测量,以使相对基准的对准标记的图案得以形成。
根据本发明的一个实施例,测量系统包括水平传感器,可测量所述基片上各点的高度和/或倾料度(即,沿z,Rx,Ry方向测量)。因此,通常在曝光位置匆忙进行的基片的水平测量,可在液体腔外面实现。
光刻投影装置可具有曝光位置,所述基片可在曝光位置进行曝光;和单独的测量位置,所述测量系统设置在所述测量位置,所述基片台可在所述曝光位置和测量位置之间移动。此外,还可设置多个基片台,各自在曝光位置和测量位置之间移动。当一个基片台形成图案时,第二个基片台可进行曝光。因此基片的产量可得到提高,使装置的效率更高,降低其成本。
根据本发明的一个实施例,所述基准是投射成像传感器。对准系统最好测量两个线性的正交方向上的移动,和在两个正交方向形成的平面上的转动。
根据本发明的另一方面,提出了一种器件制作方法,包括步骤:在基片台上放置基片,所述基片至少部分被光敏感材料层覆盖,所述基片台带有基准标记;利用测量系统的测量光束对所述基片上各点的位置进行测量;利用辐射系统提供投影光束;使用形成图案机构使所述投影光束的截面带有图案;使用投影系统将带有图案的投影光束投射到光敏感材料层的目标部分;利用包括在位于投影系统的终端件下面和周围的密封件中的液体供应系统提供液体,以充满所述基片和投影系统的终端件之间的空间,并且液体供应系统围绕投影系统的成像区对基片形成无接触密封;其中,所述测量光束在所述液体供应系统之外的单独的测量位置测量所述基片上各点的位置,并且所述密封件底部和所述基片的表面之间形成无接触气体密封,以限制所述液体供应系统中的液体。
虽然在本文中对根据本发明的装置用于制造集成电路进行了具体介绍,但是应当明确地认识到这种装置可以有许多其它用途。比如,可以用于制造集成光学系统,对磁畴存储器、液晶显示屏、薄膜磁头等的图案进行导向和检测。本领域的专业人员应当认识到,对于这些其它用途,本文中使用的术语“光网”、“晶片”或“片”可分别用更通用的术语“标模”、“基片”和“目标部分”来代替。在本文中,使用的术语“辐射光”和“光束”包括各种类型的电磁辐射,包括紫外光辐射(如波长为365、248、193、157或126纳米)。
附图说明
现在将参考示意性附图来介绍只作为示例的本发明实施例,其中:
图1示出了根据本发明实施例的光刻投影装置;
图2示出了根据本发明的实施例的光刻投影装置的细节;
图3示出了根据本发明的实施例的与图2的光刻投影装置相同的细节,但处于曝光过程的不同阶段;
图4显示了根据本发明的实施例的另外的液体供应系统;和
图5是根据本发明的实施例的图4的液体供应系统另外的视图。
在这些附图中,对应的参考符号表示对应的部件。
具体实施方式
图1示意性地示出了根据本发明特定实施例的光刻投影装置。该装置包括:
辐射系统Ex、IL,用来提供投影光束PB(如远紫外辐射光),在此具体实例中还包括辐射源LA;
第一载物台(掩模台)MT,装有固定掩模MA(如光网)的掩模架,并连接到第一定位装置PM上,可使掩模相对于部件PL精确定位;
第二载物台(基片台)WT,装有固定基片W(如涂有抗蚀膜的硅晶片)的基片座,并连接到第二定位装置PM上,可使基片相对于部件PL精确定位;
投影系统(“透镜”)PL(如折射透镜系统),用来将掩模MA的照射部分成像到基片W的目标部分C(包含一个或多个片)上。
如图所示,该装置是透射型的(即带有透射式掩模)。但一般来说,也可以是反射型的(即带有反射式掩模)。或者,该装置可以采用另一种图案形成机构,如上面提到的可编程反射镜阵列型。
辐射源LA(如放电等离子源或激光等离子源)产生辐射光束。该光束直接或在穿过调制装置如光束扩展器Ex后进入照明系统(照明器)IL中。照明器IL可以包括调整装置AM,用来设置光束强度分布的外和/或内径向区域(通常分别称作σ-外和σ-内)。另外,一般还包括其它各种部件,如积分器IN和聚光器CO。通过这种方式,使照射到掩模MA上的光束PB在其断面上具有所要求的均匀度和强度分布。
应当指出,就图1而言,辐射源LA可位于光刻投影装置的外壳内(比如当辐射源LA为汞灯时通常如此),但也可以远离光刻投影装置,将产生的光束引导到装置中(比如通过适当的引导反射镜);当辐射源LA是准分子激光器时通常采用后一种方案。本发明及权利要求包括这两种方案。
光束PB接着与固定在掩模台MT上的掩模MA相交。越过掩模MA之后,光束PB通过投影系统PL,投影系统PL将光束PB聚焦到基片W的目标部分C上。借助于第二定位装置(和干涉测量装置IF)基片台WT可以精确地移动,比如可以将不同的目标部分C置于光束PB的路径中。类似地,第一定位装置可以使掩模MA相对光束PB的路径精确定位,比如在从掩模库中机器检索掩模MA之后,或是在扫描过程中。一般地,载物台MT、WT的移动可以通过长行程模块(粗定位)和短行程模块(精定位)来实现,这在图1中没有明确示出。然而,对于晶片步进投影曝光机(不同于步进-扫描机),掩模台MT可以只与短行程致动器相连,或者可以固定在XY平面。
所示装置可以在两种不同的模式中使用:
1.步进模式,掩模台MT基本上保持不动,且整个掩模图像是一次投影(单次“闪光”)到目标部分C。然后基片台WT沿x和/或y方向移动,使得不同的目标部分C可以被光束PB照射;
2.扫描模式,基本上采用相同的方案,除了给定的目标部分C不是在单次“闪光”中曝光,而代之以,掩模台MT以速度v沿给定方向(所谓的“扫描方向”,如y方向)移动,因此使得投影光束PB在整个掩模图像上扫描;同时,基片台WT以速度V=Mv沿相同或相反的方向移动,其中M是透镜PL的放大倍数(一般,M=1/4或1/5)。通过这种方式,可以使相对较大的目标部分C曝光而无须牺牲分辨率。
在图2中,基片台WT位于测量位置,进行对准和/或水平测量。基片台设有基准F1,有时称作基准点。其包括一块蚀刻有对应标准对准标记的图案的板,在对准标记下是辐射传感器,也可称作投射图象传感器,可对辐射光束反应。在测量位置,利用测量系统30的对准系统,通过移动基片台WT检测基准F1,然后检测基片W上的对准标记,从而得到基片对准标记的位置(沿x,y,和Rz方向)。在实施例中,可相对基准测量和确定对准标记的位置。
然后在测量位置进行基片的水平测量。为了测量基片的水平,可使用水平光束(从测量系统30发出),水平光束穿过第一光栅,然后被基片W反射。第二光栅设置在被基片W反射的水平光束的路径上。第一和第二光栅图象重合的范围通过水平测量传感器进行测量,由基片W的高度和/或倾斜来确定(因此确定了z,Rx,Ry坐标)。对基片基准的水平测量的进一步介绍可参考欧洲专利申请EP 02,257,251。利用基片对准和基片水平测量的数据,可形成基片的图案。
如图3所示,基片台WT然后移动到单独的曝光位置,在曝光位置设置了液体供应装置18,可提供液体(如水)到投影系统PL和基片台WT之间的空间,形成液体腔10。在这个示例中,腔10对围绕投影系统PL的成像区的基片形成无接触密封,使液体只充满基片表面和投影系统PL的终端元件之间的空间。位于投影系统PL的终端元件下面和周围的密封件12界定了腔10并包括液体供应装置18。密封件12延伸到投影系统的终端元件上面一点,上端的内周面严密适合投影系统的台阶或终端元件,也可以是圆的。在下端,内周面严密符合成像区的形状,如矩形,尽管不一定非是矩形。液体进入投影系统下面的空间并位于密封件12内。液体水平面上升超过投影系统PL的终端元件,故提供了液体缓冲。
密封件12底部和基片W的表面之间形成的气体密封16限制了腔中的液体。气体密封由气体如空气或合成气形成,最好是氮气或其他惰性气体,气体在压力下通过入口15提供到密封件12和基片之间间隙并通过第一出口14抽出。气体入口15的过压、第一出口14的真空度和间隙的几何形状使得高速空气向内流以限制液体。
在一实施例中,类似地,由图4和5所示的入口IN和出口OUT形成的液体腔也可应用。在这种情况下,测量位置可同时设置为曝光位置,包括入口IN和出口OUT。
为了确认基片台WT在曝光位置的准确位置,通过掩模MA上的对准标记的空间象对基准F1进行三维扫描。当基准与位于最佳聚焦平面上的掩模的标记的图象对准时,有最大信号返回。利用在测量位置产生的基片W的图案,基片W上各点的位置,高度和/或倾斜可以知道。为了跟踪基片台WT的移动,可以使用适当的定位测量装置,如干涉计,可朝基片台WT的一个或多个侧面投射光束。基片台上的特定点可位于投影系统PL的焦点,对基片W的目标部分C进行曝光。
对基片台W的曝光一旦完成,就可移开进行下一步处理,新的基片放置到基片台WT。带有新基片的基片台回到测量位置。重复这个过程。
基片台WT离开曝光位置之前,可以清空液体腔,如在图2和3所示的情况下,通过减少气体入口压力和允许液体被真空系统吸出来清空;或在图4和5所示的情况下,使通过入口IN在基片上流动的液体停止和使液体通过出口OUT吸出。
为了保证基片台WT有准确的位置,上面提到的投射图象传感器的位置可通过液体,或不通过液体,检测到并可以进行校正。
根据本发明的实施例,至少有两个基片台,各基片台设有基准,一个基片台位于测量位置时,另一个位于曝光位置。基片台可在曝光位置和测量位置之间移动。
还可使用轴外测量来代替基准标记F1和投影系统进行基片对准。基准标记F1可通过使用靠近投影系统PL的另一系统来对准。还可以使用不同的基准和不同的系统,例如使用带有与投影系统的投影轴正交的轴线的系统。对这种轴外测量的进一步介绍可参见欧洲专利EP-A-0,906,590。
另外,如果基片台位于投影系统之上(即与图1比较,投影系统是倒置的),液体腔10中的液体不必完全清空,只是在需要时重新充满。
在另一个实施例中,没有单独的测量位置进行检测。标记对准的检测和测量在曝光位置进行,但腔10中没有液体。液体腔10然后再充满和进行曝光。类似地,水平测量也可在液体腔10中没有液体的情况下在曝光位置进行。这些测量既可以轴外进行也可以同轴进行。
尽管上面已经介绍了本发明的特定实施例,应当理解,本发明可通过不同于上面介绍的方式实施。所作介绍和说明不能用于限制本发明。
Claims (11)
1.一种光刻投影装置,包括:
辐射系统,可提供投影光束;
支承结构,可支承形成图案机构,所述形成图案机构可根据希望的图案使所述投影光束形成图案;
基片台,可固定保持基片;
投影系统,可将形成图案的光束投影到所述基片的目标部分;
密封件,所述密封件位于所述投影系统的终端件下面和周围并包括液体供应系统,所述液体供应系统可使所述投影系统的终端件和所述基片之间充满液体并且围绕所述投影系统的成像区对基片形成无接触密封;和
测量系统,可测量所述基片上各点的位置;
其中,所述测量系统在所述液体供应系统之外的单独的测量位置测量所述基片上各点的位置,并且所述密封件底部和所述基片的表面之间形成无接触气体密封,以限制所述液体供应系统中的液体。
2.根据权利要求1所述的光刻投影装置,其特征在于,所述测量系统包括对准系统,用于测量所述基片上多个对准标记的位置。
3.根据权利要求1或2所述的光刻投影装置,其特征在于,所述基片台设有基准。
4.根据权利要求3所述的光刻投影装置,其特征在于,所述测量系统测量和确定所述基片上多个所述对准标记相对所述基片台的所述基准的位置。
5.根据权利要求1或2所述的光刻投影装置,其特征在于,所述测量系统包括水平传感器,用于测量所述基片上各点的高度和/或倾斜度。
6.根据权利要求1或2所述的光刻投影装置,其特征在于,所述装置设有所述基片进行曝光的曝光位置和独立的测量位置,所述测量系统设置在所述测量位置,所述基片台可在所述曝光位置和测量位置之间移动。
7.根据权利要求6所述的光刻投影装置,其特征在于,设有多个基片台,所述基片台可在曝光位置和测量位置之间移动。
8.根据权利要求3所述的光刻投影装置,其特征在于,所述基准是投射图像传感器。
9.一种器件制作方法,包括步骤:
在基片台上放置基片,所述基片至少部分被光敏感材料层覆盖,所述基片台带有基准标记;
利用测量系统的测量光束对所述基片上各点的位置进行测量;
利用辐射系统提供投影光束;
使用形成图案机构使所述投影光束的截面带有图案;
使用投影系统将带有图案的投影光束投射到光敏感材料层的目标部分;
利用包括在位于投影系统的终端件下面和周围的密封件中的液体供应系统提供液体,以充满所述基片和投影系统的终端件之间的空间,并且液体供应系统围绕投影系统的成像区对基片形成无接触密封;
其中,所述测量光束在所述液体供应系统之外的单独的测量位置测量所述基片上各点的位置,并且所述密封件底部和所述基片的表面之间形成无接触气体密封,以限制所述液体供应系统中的液体。
10.根据权利要求9所述的器件制作方法,其特征在于,进行位置测量包括测量所述基片上对准标记的位置。
11.根据权利要求9或10所述的器件制作方法,其特征在于,进行位置测量包括测量所述基片上各点的高度和/或倾斜度。
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2003
- 2003-11-07 SG SG200306810A patent/SG121822A1/en unknown
- 2003-11-11 JP JP2003381339A patent/JP4234567B2/ja not_active Expired - Fee Related
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- 2003-11-11 CN CNB2003101143979A patent/CN100562805C/zh not_active Expired - Lifetime
- 2003-11-11 KR KR1020030079513A patent/KR100588123B1/ko active IP Right Grant
- 2003-11-12 US US10/705,816 patent/US7193232B2/en active Active
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- 2006-03-09 US US11/371,235 patent/US7482611B2/en not_active Expired - Fee Related
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- 2008-09-18 JP JP2008239157A patent/JP4463863B2/ja not_active Expired - Fee Related
- 2008-12-19 US US12/318,036 patent/US7795603B2/en not_active Expired - Fee Related
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- 2012-12-03 US US13/692,865 patent/US9195153B2/en not_active Expired - Fee Related
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US20160062248A1 (en) | 2016-03-03 |
JP4463863B2 (ja) | 2010-05-19 |
JP4463843B2 (ja) | 2010-05-19 |
US9195153B2 (en) | 2015-11-24 |
KR100588123B1 (ko) | 2006-06-09 |
JP2004165666A (ja) | 2004-06-10 |
JP2008022038A (ja) | 2008-01-31 |
US20110027721A1 (en) | 2011-02-03 |
TWI240851B (en) | 2005-10-01 |
US20070040133A1 (en) | 2007-02-22 |
US7482611B2 (en) | 2009-01-27 |
JP2008311684A (ja) | 2008-12-25 |
US7193232B2 (en) | 2007-03-20 |
SG121822A1 (en) | 2006-05-26 |
US20040136494A1 (en) | 2004-07-15 |
US20130128256A1 (en) | 2013-05-23 |
TW200421041A (en) | 2004-10-16 |
CN1499298A (zh) | 2004-05-26 |
US20090184270A1 (en) | 2009-07-23 |
US8344341B2 (en) | 2013-01-01 |
JP4234567B2 (ja) | 2009-03-04 |
KR20040044125A (ko) | 2004-05-27 |
US7795603B2 (en) | 2010-09-14 |
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