CN100584714C - Substrate transfer mechanism and substrate transfer apparatus, particle removal method, program, and storage medium - Google Patents

Abstract

A substrate transfer mechanism for transferring a substrate includes a mounting table on which the substrate is mounted; an arm member connected to the mounting table and moving it. The substrate transfer mechanism further includes a temperature control unit for controlling temperature of the mounting table, wherein the temperature control unit forms a temperature gradient in the mounting table. The temperature control unit includes a detector for detecting temperature in an environment or a chamber in which the substrate transfer mechanism is installed a heater for heating the mounting table and a controller for controlling an operation of the heater based on the temperature in the environment or the chamber detected by the detector.

Description

Substrate carrying mechanism and feedway, particle are removed method and program and storage medium

Technical field

The present invention relates to substrate carrying mechanism, base board delivery device with this substrate carrying mechanism, the particle of substrate carrying mechanism is removed method, the particle of base board delivery device is removed method, implement the program that this method is used, and storage medium, particularly relate in order to be implemented as membrane process, the processing of etch process etc., this substrate is transported to regulation the position substrate carrying mechanism and have the base board delivery device of this substrate carrying mechanism, the particle of substrate carrying mechanism is removed method, the particle of base board delivery device is removed method, implement the program that this method is used, and storage medium.

Background technology

So far, as the base plate processing system that substrate is carried out various plasma treatment such as ion doping, film forming, etching, known a kind of a plurality of substrate board treatments are by public base board delivery device, Pei Zhi boundling base plate processing system radially.

Shown in Figure 15 (a), such boundling base plate processing system has: for example two substrate board treatments 151 that substrate is handled; Substrate is moved into the load component 152 of taking out of from the substrate box (not shown); This load component 152 is carried out two substrates that moving into of substrate take out of to be moved into and takes out of chamber 153; And move into the substrate feed chamber 154 as base board delivery device (for example, with reference to patent documentation 1) of taking out of between the chamber 153 between substrate board treatment 151 and substrate.

Shown in Figure 15 (b), substrate feed chamber 154 has: portion is with N within it ₂The gas introduction part 155 that gas etc. are removed and with the evacuated pump in inside portion 156.In addition, portion has the handling device 157 as the substrate carrying mechanism of conveying substrate within it, in addition, takes out of on the sidewall that chamber 153 joins moving into substrate board treatment 151 and substrate, has the switching family of power and influence 158 freely.Handling device 157 is articulated arm handling device that a plurality of wrist spares and rotating table are arranged, and by the family of power and influence 158 substrate is flowed to substrate board treatment 151 or substrate and moves into and take out of chamber 153.

[patent documentation 1] spy opens flat 10-154739 communique (Fig. 1)

; if with such base plate processing system substrate is handled continuously, then during handling device 157 conveying substrates, the cutting powder particle that flies upward when being brought into particle in the substrate feed chamber 154 or handling device 157 actions with substrate is often attached on the substrate; therefore; for example in etch process, the particle that adheres to becomes mask, and etching residue takes place; in addition; in film-forming process, this particle that adheres to becomes nuclear and grows, so the problem that exists the quality of film to descend.

Summary of the invention

The particle that the object of the present invention is to provide the particle of the substrate carrying mechanism that a kind of energy will peel off and remove attached to the particle on the substrate, the base board delivery device with this substrate carrying mechanism, substrate carrying mechanism to remove method, base board delivery device is removed method, is implemented program and storage medium that this method is used.

In order to achieve the above object, the described substrate carrying mechanism of first technical scheme of the present invention is a kind of substrate carrying mechanism of conveying substrate, it is characterized in that having: the mounting portion of mounting substrate; The wrist that is connected in the above-mentioned mounting portion and above-mentioned mounting portion is moved; And the temperature control apparatus used of the temperature of controlling above-mentioned mounting portion, the said temperature control setup makes above-mentioned mounting portion form the thermal drop of regulation.

The described substrate carrying mechanism of second technical scheme is characterised in that at the described substrate carrying mechanism of first technical scheme, the said temperature control setup has the test section of the temperature that detects exterior circumferential; Heat the heating part of above-mentioned mounting portion; And, control the control part of the action of above-mentioned heating part according to temperature by the detected exterior circumferential of above-mentioned test section.

The described substrate carrying mechanism of the 3rd technical scheme is characterised in that, at the described substrate carrying mechanism of second technical scheme, above-mentioned control part is controlled at the temperature of above-mentioned mounting portion than the temperature more than the high 30K of temperature of exterior circumferential.

The described substrate carrying mechanism of the 4th technical scheme is characterised in that, the described substrate carrying mechanism of any technical scheme in first to the 3rd, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described base board delivery device of the 5th technical scheme is a kind ofly to have the reception room of accommodating substrate, be configured in this reception room and the substrate carrying mechanism of conveying substrate, make above-mentioned exhaust portion of accommodating indoor exhaust and gas is imported the base board delivery device of the gas introduction part in the above-mentioned reception room, and the aforesaid substrate conveying mechanism has: the mounting portion of mounting substrate; The wrist that is connected in the above-mentioned mounting portion and above-mentioned mounting portion is moved; And the temperature control apparatus used of the temperature of controlling above-mentioned mounting portion, the said temperature control setup makes above-mentioned mounting portion form the thermal drop of regulation.

The described base board delivery device of the 6th technical scheme is characterised in that at the described base board delivery device of the 5th technical scheme, the said temperature control setup has the test section that detects the temperature in the above-mentioned reception room; Heat the heating part of above-mentioned mounting portion; And, control the control part of the action of above-mentioned heating part according to by the temperature in the detected above-mentioned reception room of above-mentioned test section.

The described base board delivery device of the 7th technical scheme is characterised in that, at the described base board delivery device of the 6th technical scheme, above-mentioned control part is controlled at the temperature of above-mentioned mounting portion than the temperature more than the high 30K of the temperature in the above-mentioned reception room.

The described base board delivery device of the 8th technical scheme is characterised in that, the described base board delivery device of any technical scheme in the 5th to the 7th, the above-mentioned gas introduction part has according to by the temperature in the detected above-mentioned reception room of above-mentioned test section, controls the gas temperature control apparatus of temperature of gas of the regulation of above-mentioned importing.

The described base board delivery device of the 9th technical scheme is characterised in that, the described base board delivery device of any technical scheme in the 5th to the 8th also has the pressure control device that the pressure in the above-mentioned reception room of control is used.

The described base board delivery device of the tenth technical scheme is characterised in that, at the described base board delivery device of the 9th technical scheme, above-mentioned pressure control device with the pressure control in the above-mentioned reception room 1.3 * 10 ^-2～1.3kPa (0.1～10Torr).

The described base board delivery device of the 11 technical scheme is characterised in that, the described base board delivery device of any technical scheme in the 5th to the tenth, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described substrate carrying mechanism of the 12 technical scheme is a kind of substrate carrying mechanism of conveying substrate, it is characterized in that, has: the mounting portion of mounting substrate; The wrist that is connected in the above-mentioned mounting portion and above-mentioned mounting portion is moved; The vibration generating unit of the vibration usefulness of supersonic zone takes place; And be connected on the above-mentioned vibration generating unit, be fixed on the oscillating portion in the above-mentioned mounting portion simultaneously.

In order to achieve the above object, the described substrate carrying mechanism of the 13 technical scheme is a kind ofly to have the reception room of accommodating substrate, be configured in this reception room and the substrate carrying mechanism of conveying substrate, make above-mentioned exhaust portion of accommodating indoor exhaust and gas is imported the base board delivery device of the gas introduction part in the above-mentioned reception room, and the aforesaid substrate conveying mechanism has the mounting portion of mounting substrate; The wrist that is connected in the above-mentioned mounting portion and above-mentioned mounting portion is moved; The vibration generating unit of the vibration usefulness of supersonic zone takes place; And be connected on the above-mentioned vibration generating unit, be fixed on the oscillating portion in the above-mentioned mounting portion simultaneously.

In order to achieve the above object, the described substrate carrying mechanism of the 14 technical scheme is a kind of substrate carrying mechanism of conveying substrate, it is characterized in that, has: the mounting portion of mounting substrate; The wrist that is connected in the above-mentioned mounting portion and above-mentioned mounting portion is moved; Control the temperature control apparatus that the temperature of above-mentioned mounting portion is used; The vibration generating unit of the vibration usefulness of supersonic zone takes place; And be connected on the above-mentioned vibration generating unit, being fixed on the oscillating portion in the above-mentioned mounting portion simultaneously, the said temperature control setup makes above-mentioned mounting portion form the thermal drop of regulation.

The described substrate carrying mechanism of the 15 technical scheme is characterised in that at the described substrate carrying mechanism of the 14 technical scheme, the said temperature control setup has: the test section that detects the temperature of exterior circumferential; Heat the heating part of above-mentioned mounting portion; And, control the control part of the action of above-mentioned heating part according to temperature by the detected exterior circumferential of above-mentioned test section.

The described substrate carrying mechanism of the 16 technical scheme is characterised in that, at the described substrate carrying mechanism of the 15 technical scheme, above-mentioned control part is controlled at the temperature of above-mentioned mounting portion than the temperature more than the high 30K of temperature of exterior circumferential.

The described substrate carrying mechanism of the 17 technical scheme is characterised in that, the described substrate carrying mechanism of any technical scheme in the 14 to the 16, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described base board delivery device of the 18 technical scheme is a kind ofly to have the reception room of accommodating substrate, be configured in this reception room and the substrate carrying mechanism of conveying substrate, make above-mentioned exhaust portion of accommodating indoor exhaust and gas is imported the base board delivery device of the gas introduction part in the above-mentioned reception room, and the aforesaid substrate conveying mechanism has the mounting portion of mounting substrate; The wrist that is connected in the above-mentioned mounting portion and above-mentioned mounting portion is moved; Control the temperature control apparatus that the temperature of above-mentioned mounting portion is used; The vibration generating unit of the vibration usefulness of supersonic zone takes place; And be connected on the above-mentioned vibration generating unit, being fixed on the oscillating portion in the above-mentioned mounting portion simultaneously, the said temperature control setup makes above-mentioned mounting portion formation temperature gradient.

The described base board delivery device of the 19 technical scheme is characterised in that at the described base board delivery device of the 18 technical scheme, the said temperature control setup has the test section that detects the temperature in the above-mentioned reception room; Heat the heating part of above-mentioned mounting portion; And, control the control part of the action of above-mentioned heating part according to by the temperature in the detected above-mentioned reception room of above-mentioned test section.

The described base board delivery device of the 20 technical scheme is characterised in that, at the described base board delivery device of the 19 technical scheme, above-mentioned control part is controlled at the temperature of above-mentioned mounting portion than the temperature more than the high 30K of the temperature in the above-mentioned reception room.

The described base board delivery device of the 21 technical scheme is characterised in that, the described base board delivery device of any technical scheme in the 18 to the 20, the above-mentioned gas introduction part has according to by the temperature in the detected reception room of above-mentioned test section, controls the gas temperature control apparatus of temperature of gas of the regulation of above-mentioned importing.

The described base board delivery device of the 22 technical scheme is characterised in that the described base board delivery device of any technical scheme in the 18 to the 21 is characterized in that: also have the pressure control device that the pressure in the above-mentioned reception room of control is used.

The described base board delivery device of the 23 technical scheme is characterised in that, at the described base board delivery device of the 22 technical scheme, above-mentioned pressure control device with the pressure control in the above-mentioned reception room 1.3 * 10 ^-2～1.3kPa (0.1～10Torr).

The described base board delivery device of the 24 technical scheme is characterised in that, the described base board delivery device of any technical scheme in the 18 to the 23, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described base board delivery device of the 25 technical scheme is a kind of mounting portion that has the reception room of accommodating substrate, is configured in mounting aforesaid substrate in this reception room, makes the above-mentioned exhaust portion of indoor exhaust and the base board delivery device that gas is imported the gas introduction part in the above-mentioned reception room of accommodating, it is characterized in that: have the temperature control apparatus that the temperature of the above-mentioned mounting of control portion is used, the said temperature control setup makes above-mentioned mounting portion form the thermal drop of regulation.

The described base board delivery device of the 26 technical scheme is characterised in that at the described base board delivery device of the 25 technical scheme, the said temperature control setup has the test section that detects the temperature in the above-mentioned reception room; Heat the heating part of above-mentioned mounting portion; And, control the control part of the action of above-mentioned heating part according to by the temperature in the detected above-mentioned reception room of above-mentioned test section.

The described base board delivery device of the 27 technical scheme is characterised in that, at the described base board delivery device of the 26 technical scheme, above-mentioned control part is controlled at the temperature of above-mentioned mounting portion than the temperature more than the high 30K of the temperature in the above-mentioned reception room.

The described base board delivery device of the 28 technical scheme is characterised in that, the described base board delivery device of any technical scheme in the 25 to the 27, the above-mentioned gas introduction part has according to by the temperature in the detected reception room of above-mentioned test section, controls the gas temperature control apparatus of temperature of gas of the regulation of above-mentioned importing.

The described base board delivery device of the 29 technical scheme is characterised in that, the described base board delivery device of any technical scheme in the 25 to the 28 also has the pressure control device that the pressure in the above-mentioned reception room of control is used.

The described base board delivery device of the 30 technical scheme is characterised in that, at the described base board delivery device of the 29 technical scheme, above-mentioned pressure control device with the pressure control in the above-mentioned reception room 1.3 * 10 ^-2～1.3kPa (0.1～10Torr).

The described base board delivery device of the 31 technical scheme is characterised in that, the described base board delivery device of any technical scheme in the 25 to the 30, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described particle method of removing of the 32 technical scheme is a kind of mounting portion with mounting substrate, be connected in the above-mentioned mounting portion and make the particle of the substrate carrying mechanism of the wrist that above-mentioned mounting portion moves remove method, it is characterized in that, this method comprises: control the temperature controlling step that the temperature of above-mentioned mounting portion is used, the said temperature controlled step forms the thermal drop of regulation in above-mentioned mounting portion.

The described particle method of removing of the 33 technical scheme is characterised in that, removes method at the described particle of the 32 technical scheme, and the said temperature controlled step comprises the detection step of the temperature that detects exterior circumferential; And, heat the heating steps of above-mentioned mounting portion according to the temperature that detects the detected exterior circumferential of step by this.

The described particle method of removing of the 34 technical scheme is characterised in that, removes method at the described particle of the 33 technical scheme, and the said temperature controlled step is controlled at the temperature of above-mentioned mounting portion than the temperature more than the high 30K of temperature of exterior circumferential.

The described particle method of removing of the 35 technical scheme is characterised in that, the described particle of any technical scheme in the 32 to the 34 is removed method, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described particle method of removing of the 36 technical scheme is a kind of reception room of accommodating substrate that has, by the mounting portion that is configured in mounting substrate in this reception room and be connected in this mounting portion and substrate carrying mechanism that wrist that above-mentioned mounting portion is moved constitutes, make above-mentioned exhaust portion of accommodating indoor exhaust, and the particle that gas imports the base board delivery device of the gas introduction part in the above-mentioned reception room removed method, it is characterized in that: comprise the temperature controlling step that the temperature of the above-mentioned mounting of control portion is used, the said temperature controlled step makes above-mentioned mounting portion form the thermal drop of regulation.

The described particle method of removing of the 37 technical scheme is characterised in that, removes method at the described particle of the 36 technical scheme, and the said temperature controlled step comprises the detection step that detects the temperature in the above-mentioned reception room; And according to by the temperature in the detected above-mentioned reception room of above-mentioned detection step, heat the heating steps of above-mentioned mounting portion.

The described particle method of removing of the 38 technical scheme is characterised in that, removes method at the described particle of the 37 technical scheme, and the said temperature controlled step is controlled at the temperature of above-mentioned mounting portion than the temperature more than the high 30K of the temperature in the above-mentioned reception room.

The described particle method of removing of the 39 technical scheme is characterised in that, the described particle of any technical scheme in the 36 to the 38 is removed method, it is characterized in that: also comprise according to by the temperature in the detected above-mentioned reception room of above-mentioned detection step, control the gas temperature controlled step of temperature of gas of the regulation of above-mentioned importing.

The described particle method of removing of the 40 technical scheme is characterised in that the described particle of any technical scheme in the 36 to the 39 is removed method, it is characterized in that: also comprise the pressure control step that the pressure in the above-mentioned reception room of control is used.

The described particle method of removing of the 41 technical scheme is characterised in that, removes method at the described particle of the 40 technical scheme, above-mentioned pressure control step with the pressure control in the above-mentioned reception room 1.3 * 10 ^-2～1.3kPa (0.1～10Torr).

The described particle method of removing of the 42 technical scheme is characterised in that, the described particle of any technical scheme in the 36 to the 41 is removed method, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described particle method of removing of the 43 technical scheme is a kind of mounting portion with mounting substrate; And be connected in the above-mentioned mounting portion and make the particle of the substrate carrying mechanism of the wrist that above-mentioned mounting portion moves remove method, it is characterized in that: comprise that the vibration that vibration with supersonic zone is added in the above-mentioned mounting portion applies step.

In order to achieve the above object, the described particle method of removing of the 44 technical scheme be a kind ofly have the reception room of accommodating substrate, by the mounting portion that is configured in mounting substrate in this reception room and be connected in this mounting portion and substrate carrying mechanism that wrist that above-mentioned mounting portion is moved constitutes, make above-mentioned exhaust portion of accommodating indoor exhaust and the particle that gas imports the base board delivery device of the gas introduction part in the above-mentioned reception room is removed method, it is characterized in that: comprise that the vibration that vibration with supersonic zone is added in the above-mentioned mounting portion applies step.

The described particle method of removing of the 45 technical scheme is a kind of mounting portion with mounting substrate; And be connected in the above-mentioned mounting portion and make the particle of the substrate carrying mechanism of the wrist that above-mentioned mounting portion moves remove method, it is characterized in that: comprise the temperature controlling step that the temperature of the above-mentioned mounting of control portion is used; And the vibration that the vibration of supersonic zone is added in the above-mentioned mounting portion applies step, and the said temperature controlled step forms the thermal drop of regulation in above-mentioned mounting portion.

The described particle method of removing of the 46 technical scheme is characterised in that, remove method at the described particle of the 45 technical scheme, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described particle method of removing of the 47 technical scheme be a kind ofly have the reception room of accommodating substrate, by the mounting portion that is configured in mounting substrate in this reception room and be connected in this mounting portion and substrate carrying mechanism that wrist that above-mentioned mounting portion is moved constitutes, make above-mentioned exhaust portion of accommodating indoor exhaust and the particle that gas imports the base board delivery device of the gas introduction part in the above-mentioned reception room is removed method, it is characterized in that: comprise the temperature controlling step that the temperature of the above-mentioned mounting of control portion is used; And the vibration that the vibration of supersonic zone is added in the above-mentioned mounting portion applies step, and the said temperature controlled step is the formation temperature gradient in above-mentioned mounting portion.

The described particle method of removing of the 48 technical scheme is characterised in that, remove method at the described particle of the 47 technical scheme, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described particle method of removing of the 49 technical scheme is a kind of mounting portion that has the reception room of accommodating substrate, is configured in mounting substrate in the above-mentioned reception room, make above-mentioned exhaust portion of accommodating indoor exhaust and the particle that gas imports the base board delivery device of the gas introduction part in the above-mentioned reception room is removed method, it is characterized in that: comprise the temperature controlling step that the temperature of the above-mentioned mounting of control portion is used; The said temperature controlled step forms the thermal drop of regulation in above-mentioned mounting portion.

The described particle method of removing of the 50 technical scheme is characterised in that, removes method at the described particle of the 49 technical scheme, and the said temperature controlled step comprises the detection step that detects the temperature in the above-mentioned reception room; And, heat the heating steps of above-mentioned mounting portion according to the temperature that detects by this in detected above-mentioned reception room of step.

The described particle method of removing of the 51 technical scheme is characterised in that, removes method at the described particle of the 50 technical scheme, and above-mentioned controlled step is controlled at the temperature of above-mentioned mounting portion than the temperature more than the high 30K of the temperature in the above-mentioned reception room.

The described particle method of removing of the 52 technical scheme is characterised in that, the described particle of any technical scheme in the 49 to the 51 is removed method, also comprise according to by the temperature in the detected reception room of above-mentioned detection step, control the gas temperature controlled step of temperature of gas of the regulation of above-mentioned importing.

The described particle method of removing of the 53 technical scheme is characterised in that, the described particle of any technical scheme in the 49 to the 52 is removed method, it is characterized in that: also comprise the pressure control step that the pressure in the above-mentioned reception room of control is used.

The described particle method of removing of the 54 technical scheme is characterised in that, removes method at the described particle of the 53 technical scheme, above-mentioned pressure control step with the pressure control in the above-mentioned reception room 1.3 * 10 ^-2～1.3kPa (0.1～10Torr).

The 55 the described particle method of removing is characterised in that, the described particle of any technical scheme in the 49 to the 54 is removed method, the top layer that above-mentioned mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place above-mentioned mounting portion.

In order to achieve the above object, the described program of the 56 technical scheme is a kind of program have the mounting portion of mounting substrate and to be connected in the above-mentioned mounting portion and the particle method of removing of the substrate carrying mechanism of the wrist that above-mentioned mounting portion moves is used of carrying out in computing machine, it is characterized in that: the temperature control modules that has the temperature of the above-mentioned mounting of control portion to use, the said temperature control module is the formation temperature gradient in above-mentioned mounting portion, and the said temperature control module has the detection module of the temperature that detects exterior circumferential; And, heat the heating module of above-mentioned mounting portion according to temperature by the detected exterior circumferential of this detection module.

In order to achieve the above object, the described program of the 57 technical scheme be a kind of in computing machine, carry out have the reception room of accommodating substrate, by the mounting portion that is configured in mounting substrate in this reception room and be connected in this mounting portion and substrate carrying mechanism that wrist that above-mentioned mounting portion is moved constitutes, make above-mentioned exhaust portion of accommodating indoor exhaust and gas is imported the program that the particle method of removing of the base board delivery device of the gas introduction part in the above-mentioned reception room is used, it is characterized in that: the temperature control modules that has the temperature of the above-mentioned mounting of control portion to use; And according to by the temperature in the detected above-mentioned reception room of above-mentioned detection step, control the gas temperature control module of temperature of gas of the regulation of above-mentioned importing, the said temperature control module forms the thermal drop of regulation in above-mentioned mounting portion.

The described program of the 58 technical scheme is characterised in that, in the described program of the 57 technical scheme, it is characterized in that: control the pressure control module that the pressure in the above-mentioned reception room is used in addition.

In order to achieve the above object, the described program of the 59 technical scheme is a kind of program have the mounting portion of mounting substrate and to be connected in the above-mentioned mounting portion and the particle method of removing of the substrate carrying mechanism of the wrist that above-mentioned mounting portion moves is used of carrying out in computing machine, it is characterized in that: the temperature control modules that has the temperature of the above-mentioned mounting of control portion to use, and the vibration that the vibration of supersonic zone is added in the above-mentioned mounting portion applies module, and the said temperature control module forms the thermal drop of regulation in above-mentioned mounting portion.

In order to achieve the above object, the described storage medium of the 60 technical scheme be a kind of be stored in the computing machine to carry out have the mounting portion of mounting substrate and be connected in the above-mentioned mounting portion and make the storage medium of the program that the particle method of removing of the substrate carrying mechanism of the wrist that above-mentioned mounting portion moves uses, the temperature control modules that said procedure has the temperature of the above-mentioned mounting of control portion to use, the said temperature control module forms the thermal drop of regulation in above-mentioned mounting portion, the said temperature control module has the detection module of the temperature that detects exterior circumferential; And, heat the heating module of above-mentioned mounting portion according to temperature by the detected exterior circumferential of this detection module.

In order to achieve the above object, the described storage medium of the 61 technical scheme be a kind of be stored in the computing machine to carry out have the reception room of accommodating substrate, by the mounting portion that is configured in mounting substrate in this reception room and be connected in this mounting portion and substrate carrying mechanism that wrist that above-mentioned mounting portion is moved constitutes, make above-mentioned exhaust portion of accommodating indoor exhaust, and gas imported the storage medium of the program that the particle method of removing of the base board delivery device of the gas introduction part in the above-mentioned reception room uses, the temperature control modules that said procedure has the temperature of the above-mentioned mounting of control portion to use; And according to by the temperature in the detected above-mentioned reception room of above-mentioned detection step, control the gas temperature control module of temperature of gas of the regulation of above-mentioned importing, the said temperature control module forms the thermal drop of regulation in above-mentioned mounting portion.

The described storage medium of the 62 technical scheme is characterised in that at the described storage medium of the 61 technical scheme, said procedure is controlled the pressure control module that the pressure in the above-mentioned reception room is used in addition.

In order to achieve the above object, the described storage medium of the 63 technical scheme be a kind of be stored in the computing machine to carry out have the mounting portion of mounting substrate and be connected in the above-mentioned mounting portion and make the storage medium of the program that the particle method of removing of the substrate carrying mechanism of the wrist that above-mentioned mounting portion moves uses, the temperature control modules that said procedure has the temperature of the above-mentioned mounting of control portion to use, and the vibration that the vibration of supersonic zone is added in the above-mentioned mounting portion applies module, and the said temperature control module forms the thermal drop of regulation in above-mentioned mounting portion.

If adopt the described substrate carrying mechanism of first technical scheme, the described base board delivery device of the 5th technical scheme, the described particle of the 32 technical scheme is removed method, and the described particle of the 36 technical scheme is removed method, then owing in the mounting portion of mounting substrate, form the thermal drop of regulation, so can utilize the thermal stress that on the interface of substrate and particle, takes place, particle is peeled off from substrate, utilization is towards the thermophoresis power away from the directive effect of substrate, this particle is removed from substrate, therefore can will be peeled off and remove attached to the particle on the substrate.

Remove method if adopt described substrate carrying mechanism of second technical scheme and the described particle of the 33 technical scheme, then owing to temperature heating mounting portion, so can will peel off reliably and remove attached to the particle on the substrate of mounting portion according to detected exterior circumferential.

Remove method if adopt described substrate carrying mechanism of the 3rd technical scheme and the described particle of the 34 technical scheme, then the temperature owing to mounting portion is controlled in than the temperature more than the high 30K of temperature of exterior circumferential, so can will peel off more reliably and remove attached to the particle on the substrate.

If adopt the described substrate carrying mechanism of the 4th technical scheme, the described base board delivery device of the 11 technical scheme, the described particle of the 35 technical scheme removes method and the described particle of the 42 technical scheme is removed method, then because the linear expansion factor of the material on mounting portion top layer is different with near the linear expansion factor of the particle that takes place mounting portion, so the thermal stress that takes place on the interface of mounting portion and particle is increased, therefore can promote peeling off and removing attached to the particle in the mounting portion.

Remove method if adopt described base board delivery device of the 8th technical scheme and the described particle of the 39 technical scheme, then since gas temperature control apparatus according to the temperature in the detected reception room, control the temperature of gas of the regulation of this importing, even so mounting portion can not be heated under the situation of temperature desired, also can be near mounting portion the formation temperature gradient.

Remove method if adopt described base board delivery device of the 9th technical scheme and the described particle of the 40 technical scheme, then owing to can control the pressure of reception room, so utilize the thermophoresis power that depends on the pressure in the reception room, can will peel off more reliably attached to the particle on the substrate.

If adopt described base board delivery device of the tenth technical scheme and the described particle of the 41 technical scheme to remove method, then because the pressure of reception room is controlled in 1.3 * 10 ^-2～1.3kPa (0.1～10Torr).If the pressure of reception room is set to 1.3 * 10 ^-2～1.3kPa, then thermophoresis power increases.Therefore, can utilize the thermophoresis power that has increased to peel off more reliably attached to the particle on the substrate.

If adopt the described substrate carrying mechanism of the 12 technical scheme, the described base board delivery device of the 13 technical scheme, the described particle of the 43 technical scheme to remove method and the described particle of the 44 technical scheme is removed method, then owing to the vibration with supersonic zone is added in the mounting portion of mounting substrate, so the vibration of supersonic zone is added on the substrate, can weaken the binding force of substrate and particle, therefore can will peel off and remove attached to the particle on the substrate.

If adopt the described substrate carrying mechanism of the 14 technical scheme, the described base board delivery device of the 18 technical scheme, the described particle of the 45 technical scheme is removed method, and the described particle of the 47 technical scheme is removed method, then owing in the mounting portion of mounting substrate, form the thermal drop of regulation, the vibration of supersonic zone simultaneously is added in the mounting portion of mounting substrate, so can utilize the thermal stress that on the interface of substrate and particle, takes place, particle is peeled off from substrate, utilization is towards the thermophoresis power away from the directive effect of substrate, this particle is removed from substrate, in addition, the vibration of supersonic zone is added on the substrate, can weaken the binding force of substrate and particle, therefore can will peel off reliably and remove attached to the particle on the substrate.

Remove method if adopt described base board delivery device of the 25 technical scheme and the described particle of the 49 technical scheme, then owing in the mounting portion of mounting substrate, form the thermal drop of regulation, so can utilize the thermal stress that on the interface of substrate and particle, takes place, particle is peeled off from substrate, utilization is towards the thermophoresis power away from the directive effect of substrate, this particle is removed from substrate, therefore can will be peeled off reliably and remove attached to the particle on the substrate.

If adopt described program of the 56 technical scheme and the described storage medium of the 60 technical scheme, then owing in the mounting portion of mounting substrate, form the thermal drop of regulation, temperature according to detected exterior circumferential, heating mounting portion, so can utilize the thermal stress that on the interface of substrate and particle, takes place, particle is peeled off from substrate, utilization is towards the thermophoresis power away from the directive effect of substrate, this particle is removed from substrate, therefore can will be peeled off reliably and remove attached to the particle on the substrate.

If adopt described program of the 57 technical scheme and the described storage medium of the 61 technical scheme, then owing in the mounting portion of mounting substrate, form the thermal drop of regulation, according to the temperature in the detected reception room, control the temperature of gas of the regulation of this importing, so can utilize the thermal stress that on the interface of substrate and particle, takes place, particle is peeled off from substrate, utilization is towards the thermophoresis power away from the directive effect of substrate, this particle is removed from substrate, in addition, even mounting portion can not be heated under the situation of temperature desired, also can be near mounting portion the formation temperature gradient, therefore can will peel off and remove attached to the particle on the substrate.

If adopt described program of the 58 technical scheme and the described storage medium of the 62 technical scheme, then because the pressure in the control reception room, so utilize the thermophoresis power that depends on the pressure in the reception room, can will peel off more reliably attached to the particle on the substrate.

If adopt described program of the 59 technical scheme and the described storage medium of the 63 technical scheme, then owing in the mounting portion of mounting substrate, form the thermal drop of regulation, the vibration of supersonic zone simultaneously is added in the mounting portion of mounting substrate, so can utilize the thermal stress that on the interface of substrate and particle, takes place, particle is peeled off from substrate, utilization is towards the thermophoresis power away from the directive effect of substrate, this particle is removed from substrate, in addition, the vibration of supersonic zone is added on the substrate, can weaken the binding force of substrate and particle, therefore can will peel off reliably and remove attached to the particle on the substrate.

Description of drawings

Fig. 1 is the figure of structure that roughly represents the base board delivery device of first embodiment of the present invention.

Fig. 2 is the block diagram of the structure of the conveying arm in the presentation graphs 1 roughly.

Fig. 3 is the result's of the expression moving velocity that calculates the particle of peeling off from substrate figure.

Fig. 4 is that expression is calculated corresponding to the indoor respectively result's of the thermal drop of the pressure of regulation figure.

Fig. 5 is that the thermophoresis power act on the particle figure to the dependent result of pressure is calculated in expression.

Fig. 6 is the figure of structure that roughly represents the base board delivery device of second embodiment of the present invention.

Fig. 7 is the figure of structure that roughly represents the base board delivery device of the 3rd embodiment of the present invention.

Fig. 8 is that the SiO that is dispersed on the substrate W is measured in expression ₂The result's of the rate of removing of particle figure.

Fig. 9 is the figure of structure of substrate board treatment that roughly represents to have the base board delivery device of the 4th embodiment of the present invention.

Figure 10 is the figure that roughly represents the structure of substrate-placing chamber.

Figure 11 is the figure of variation that expression has the plasma process system of substrate-placing chamber.

Figure 12 is illustrated in the particle of implementing as embodiments of the invention to remove in the processing upper electrode and the heal differential of Si wafer and the SiO on the Si wafer in the process chamber ₂The figure of the relation of the slip of particle.

Figure 13 is illustrated in the particle of implementing as embodiments of the invention to remove in the processing pressure in the process chamber and the SiO on the Si wafer ₂The figure of the relation of the slip of particle.

Figure 14 is illustrated in the particle of implementing as embodiments of the invention to remove in the processing time of delivery of indoor Si wafer and the SiO on the Si wafer ₂The figure of the relation of the slip of particle.

Figure 15 is the figure of structure that has roughly represented to dispose the existing boundling base plate processing system of articulated arm handling device, and Figure 15 (a) is the horizontal sectional view of boundling base plate processing system, and Figure 15 (b) is the section drawing along the line VI-VI among Figure 15 (a).

Nomenclature: 10 base board delivery devices; 11 chambers; 12 conveying arms; 15 exhaust lines; 18 gas introduction tube lines; 21 rotating tablees; 22 first wrist spares; 23 second wrist spares; 24 pick-ups; 28 temperature control apparatuss; 8 temperature sensors; 25 resistive elements; 9 control parts.

The specific embodiment

Below, with reference to the description of drawings embodiments of the present invention.

Fig. 1 is the figure of structure that roughly represents the base board delivery device of first embodiment of the present invention.

In Fig. 1, base board delivery device 10 has: the box-shaped chamber 11 (reception room) of the safety ground of metal, for example aluminium or stainless steel; And in this chamber 11 conveying arm 12 (substrate carrying mechanism) of conveying substrate W.

On the sidewall of chamber 11, be provided with conveying arm 12 and substrate W is moved into moving into of making that substrate W passes through when taking out of chamber 11 take out of mouthfuls 13, this is moved into and takes out of mouthfuls 13 and sealed by the family of power and influence 14 who opens and closes freely.In addition, exhaust line (exhaust portion) 15 is connected on the bottom of chamber 11.This exhaust line 15 has: diameter for example for the freeing pipe 16 of 25mm, be configured in the valve V1 midway of this freeing pipe 16 and be connected dry pump 17 on the freeing pipe 16 as exhaust pump, chamber 11 is carried out exhaust decompression.This valve V1 can will cut off with dry pump 17 in the chamber 11.In addition, gas introduction tube line 18 (gas introduction part) is connected the top of chamber 11.This gas introduction tube line 18 has: for example supply with N ₂The gas supply device 19 of gas and with N ₂The gas introduction tube 20 that gas imports in the chamber 11 from this gas supply device 19, valve V2 is configured in gas introduction tube 20 midway.This valve V2 can will cut off with gas supply device 19 in the chamber 11.

In addition, base board delivery device 10 links by gas introduction tube 20 and chamber 11 and gas supply device 19, has: make the N that imports in the chamber 11 ₂Air cooling cooling mechanism 6 (gas temperature control apparatus) but; And be arranged on the freeing pipe 16 pressure control device 7 that the pressure in the control chamber 11 is used.Cooling mechanism 6 makes the N that imports in the chamber 11 according to the temperature of the chamber 11 that is detected by the described temperature sensor 8 in back ₂Air cooling but, pressure control device 7 with the pressure control in the chamber 11 at for example 1.3kPa (10Torr).

This base board delivery device 10 for example is arranged in the combined or parallel base plate processing system, is connected on plasma processing apparatus that this base plate processing system has etc. by the family of power and influence 14.

Fig. 2 is the block diagram of the structure of the conveying arm 12 in the presentation graphs 1 roughly.

In Fig. 2, have: be configured on the bottom surface of chamber 11, wind axle (to call " chamber vertical axis ") rotation freely the rotating table 21 vertical with respect to this bottom surface as the conveying arm 12 of articulated arm handling device; Be connected the first bar-shaped wrist spare 22 on this rotating table 21; Be connected the second bar-shaped wrist spare 23 on this first wrist spare 22; And the pick-up 24 (mounting portion) that is connected the mounting substrate W on the other end of this second wrist spare 23.

In this conveying arm 12, one end of the second wrist spare 23 is connected with the other end of the first wrist spare 22 freely around the rotation of chamber vertical axis, pick-up 24 is connected with the other end of the second wrist spare 23 freely around the rotation of chamber vertical axis, rotating table 21, the first wrist spare 22, the second wrist spare 23 and pick-up 24 are worked in coordination with and are rotated motion, therefore, can make pick-up 24 and be positioned in substrate W on this pick-up 24 and move to the desirable position in the chamber 11 or take out of mouthfuls 13 and move in the adjacent plasma processing apparatus etc. by moving into.

Pick-up 24 is the tuning fork shape, and substrate W is placed on two furcations, and on the other hand, as mentioned above, the end opposite with two furcations is connected with the other end of the second wrist spare 23.

In addition, conveying arm 12 has the temperature control apparatus 28 used of temperature of control pick-up 24, and temperature control apparatus 28 forms the thermal drop of stipulating on the inwall of pick-up 24 and chamber 11.Specifically, temperature control apparatus 28 has: the temperature sensor 8 (test section) of the inner wall temperature of detection chambers 11; Be embedded in the inside of the pick-up 24 of conveying arm 12, and for example sheathed heater constant resistance body 25 (heating parts) of heating pick-up 24; By being configured in the in-to-in electric wire 26 of the second wrist spare 23, the first wrist spare 22 and rotating table 21, be connected with resistive element 25, the temperature controlling portion 9 of controlling resistance body 25 simultaneously.

This control part 9 is according to the inner wall temperature of the chamber 11 of usefulness temperature sensor 8 detections, heating resistor 25, the temperature of control pick-up 24.Therefore, can on the inwall of pick-up 24 and chamber 11, form the temperature desired gradient, thereby can will peel off reliably and remove attached to the particle on the substrate W.In addition, at this moment, the pick-up 24 of conveying arm 12 preferably is controlled as than the temperature more than the high 30K of inner wall temperature of chamber 11.Therefore, can will peel off more reliably and remove attached to the particle on the substrate W.

The inner wall temperature of base board delivery device 10 usefulness temperature sensors 8 detection chambers 11, to export to control part 9 corresponding to the electric signal of this detected temperature, determine the voltage that applies by control part 9 corresponding to the resistive element 25 of this electric signal, be added on the resistive element 25 by the voltage that applies that will determine, come heating resistor 25, utilize main conduction heat from pick-up 24, heating is positioned in the substrate W on the pick-up 24.Therefore, can the pick-up 24 of conveying arm 12 and be positioned in substrate W on the pick-up 24 and the inwall of chamber 11 on the formation temperature gradient, act on the particle towards thermophoresis power (thermophoresis power) away from the direction (from the direction of pick-up 24) of substrate W towards the inwall of chamber 11.In addition, at this moment on substrate W, because the intrinsic linear expansion factor difference of material so generation utilizes the thermal stress of this generation along the thermal stress of direction disconnected from each other on the interface of substrate W and particle, strips down particle from substrate W.Be stripped from the particle that gets off and utilize above-mentioned thermophoresis power, be pulled on the inwall of the temperature chamber 11 lower than pick-up 24.

As mentioned above, the mechanism that particle is removed from the pick-up 24 of substrate W and conveying arm can be peeled off the particle shift motion that stroke and particle utilize thermophoresis power to move with the particle that particle utilizes thermal stress to peel off and illustrate.Here, suppose that the initial velocity of the particle of peeling off from substrate W is 10m/s, the pressure in the chamber 11 are 1.3kPa (1.0Torr), with the well-known speed formula shown in following, and the moving velocity of the particle that calculating is peeled off from substrate W.

[mathematical expression 1]

$F_T=-\frac{6\mathrm{\π}{d}_p{\mathrm{\μ}}^2{C}_s(\mathrm{\γ}+C_l\mathrm{Kn})}{\mathrm{\ρ}(1+3C_m\mathrm{Kn})(1+2\mathrm{\γ}+2C_l\mathrm{Kn})}\frac{1}{T}\frac{\mathrm{dT}}{\mathrm{dx}}$

Its result as shown in Figure 3, after particle was peeled off from substrate W, through 0.004s, promptly in several ms, the speed of particle (solid line among the figure) reached thermophoresis speed (the end of a period speed that dots among the figure).The miles of relative movement of particle (long and short dash line among the figure) was about 0.9cm apart from the upper surface of substrate W when in addition, the speed of particle had reached thermophoresis speed.In other words, the speed that is caused by thermophoresis power from the position of particle about several mm of distance that substrate W peels off reaches overriding speed, after peeling off from substrate W, can not be trapped near the substrate W, and be carried continuously.

What secondly, particle is described removes the particle shift motion in the mechanism and the relation of pressure.

In base board delivery device shown in Figure 1 10, if utilize exhaust line 15 to make decompression in the chamber 11, then in chamber 11, occurrence temperature rises and falls between the inwall of chamber 11 and the indoor atmosphere, so the N that contacts with the inwall of chamber 11 ₂The temperature of gas is different with the inner wall temperature of chamber 11.Here, the temperature that makes substrate W is 500K, and the inner wall temperature of chamber 11 is 350K, and under the situation of the influence of having considered temperature fluctuation, has calculated the thermal drop corresponding to the pressure of each regulation in the chamber 11, and it be the results are shown in Fig. 4.In addition, the transverse axis among Fig. 4 is represented the distance of the upper inside wall of substrate W and chamber 11.

As shown in Figure 4, tenuity (degree of vacuum) in the chamber 11 is big more, Michel Knuysen (Knudsen) number of promptly representing the tenuity of flow field is big more, temperature rises and falls more, for example, above-mentioned distance is that the difference of the temperature of the temperature of thermal drop of 0.00m and substrate W increases, even the pick-up 24 of conveying arm 12 and the substrate W that is positioned on the pick-up 24 are identical with the heal differential of the inwall of chamber 11, thermal drop also reduces.As mentioned above, because thermal drop is subjected to the influence of temperature fluctuation, so the tenuities in the chamber 11 increase, temperature fluctuation is big more as can be known, and it is more little that the thermophoresis power on the particle of acting on becomes.

Consider result shown in Figure 4, design conditions are: the temperature of substrate W is 623.15K, and the inner wall temperature of chamber 11 is 338.15K, the upper inside wall of substrate W and chamber 11 be spaced apart 35mm, calculate and act on diameter and be about 0.6 micron SiO ₂Thermophoresis power on the particle is to the dependence of pressure.Its result as shown in Figure 5, the pressure in the chamber 11 is 1.3 * 10 ^-2(in 0.1～10Torr) scope, the thermophoresis power that acts on the particle is maximum (F=1.0 * 10 to～1.3kPa ^{- 13}[N]).Therefore, by with the pressure control in the chamber 11 0.013～1.3kPa (0.1～10Torr), can more effectively will remove attached to the particle on the substrate W.

If employing present embodiment, then owing on the pick-up 24 of mounting substrate W, form the thermal drop of regulation, so utilizing the thermal stress that takes place on the interface of substrate W and particle peels off particle from substrate W, can utilize towards thermophoresis power away from the directive effect of substrate W, this particle is removed from substrate W, thereby can will be peeled off and remove attached to the particle on the substrate W.In addition, when making substrate W move in plasma processing apparatus adjacent etc. with base board delivery device 10, owing to can utilize pick-up 24 to peel off and to remove attached to the particle on the substrate W, even so when the continuous processing of substrate W, can carry does not have dysgenic substrate W to ensuing processing yet.In addition, by utilizing the time of delivery of substrate W, can carry out peeling off and removing of particle, and can not reduce the efficiency of movement of the base plate processing system of placement substrate feedway 10.

In addition, if adopt present embodiment, then because cooling mechanism 6 according to the inner wall temperature with temperature sensor 8 detected chambers 11, makes the N that imports in the chamber 11 ₂Air cooling but, so even pick-up 24 can not be heated under the situation of temperature desired by controlling resistance body 25, also can be near pick-up 24 the formation temperature gradient.

Fig. 6 is a constructional drawing of roughly representing the base board delivery device of second embodiment of the present invention.

In base board delivery device shown in Figure 6, its structure is with shown in Figure 1 substantially the same, to identical structural element, is marked with identically with reference to numbering, and the repetitive description thereof will be omitted, below different parts only is described.

In Fig. 6, base board delivery device 30 has substrate W is transported to conveying arm 32 in the chamber 11.Conveying arm 32 has: be configured on the bottom surface of chamber 11, wind axle rotation freely the rotating table 21 vertical with respect to this bottom surface; Be connected the first bar-shaped wrist spare 22 on this rotating table 21; Be connected the second bar-shaped wrist spare 23 on this first wrist spare 22; And the pick-up 24 that is connected the mounting substrate W on the other end of this second wrist spare 23.

In addition, conveying arm 32 has: the vibration of supersonic zone takes place, and it is the vibration generating unit 33 of the vibration usefulness of 40kHz that its frequency for example takes place; And be connected on the vibration generating unit 33, be fixed on the oscillating portion 34 on the pick-up 24 simultaneously.The direction of the vibration of the supersonic zone that vibration generating unit 33 takes place is along the direction perpendicular to the interarea that is positioned in the substrate W on the pick-up 24.In addition, though vibration generating unit 33 along direction configuration perpendicular to the interarea of substrate W, any direction can, also can be in direction configuration along the interarea level of substrate W.

The vibration of supersonic zone takes place in vibration generating unit 33, gives oscillating portion 34 by the transfer of vibration that will take place, and can make pick-up 24 vibrations of conveying arm 32.Be positioned in substrate W on the pick-up 24 by transmitting and with the frequency vibration of supersonic zone from the vibration of pick-up 24.Therefore, can weaken the binding force of substrate W and particle, therefore particle can be peeled off and removed from substrate W.

If employing present embodiment, then because the vibration of supersonic zone is added on the pick-up 24 of mounting substrate W by conveying arm 32, so the vibration of supersonic zone is added on the substrate W, can weaken the binding force of substrate W and particle, therefore can will peel off and remove attached to the particle on the substrate W.

Fig. 7 is a constructional drawing of roughly representing the base board delivery device of the 3rd embodiment of the present invention.

Base board delivery device shown in Figure 7, its structure be with shown in Figure 1 substantially the same, to identical structural element, is marked with identically with reference to numbering, and the repetitive description thereof will be omitted, below different parts only is described.

In Fig. 7, base board delivery device 40 has substrate W is transported to conveying arm 42 in the chamber 11.Conveying arm 42 has: be configured on the bottom surface of chamber 11, around chamber vertical axis rotation rotating table 21 freely; Be connected the first bar-shaped wrist spare 22 on this rotating table 21; Be connected the second bar-shaped wrist spare 23 on this first wrist spare 22; Be connected the pick-up 24 of the mounting substrate W on the other end of this second wrist spare 23; The temperature control apparatus 28 that the temperature of control pick-up 24 is used; Supersonic zone takes place, for example its frequency is the vibration generating unit 33 of the vibration usefulness of 40kHz; And be connected on the vibration generating unit 33, be fixed on oscillating portion 34 on the pick-up 24 simultaneously.

Temperature control apparatus 28 forms the thermal drop of regulation on the inwall of pick-up 24 and chamber 11.Specifically, temperature control apparatus 28 has: the temperature sensor 8 of the inner wall temperature of detection chambers 11; Be embedded in conveying arm 42 pick-up 24 inside and the heating pick-up 24, for example sheathed heater constant resistance body 25; And by being configured in the in-to-in electric wire 26 of the second wrist spare 23, the first wrist spare 22 and rotating table 21, be connected with resistive element 25, the temperature controlling portion 9 of controlling resistance body 25 simultaneously.

If employing present embodiment, then owing on the pick-up 24 of mounting substrate W, form the thermal drop of regulation, the vibration of supersonic zone simultaneously is added on the pick-up 24 of mounting substrate W, so utilizing the thermal stress that takes place on the interface of substrate W and particle peels off particle from substrate W, can utilize towards thermophoresis power away from the directive effect of substrate W, this particle is removed from substrate W, in addition, because the vibration of supersonic zone is added on the substrate W, so can weaken the binding force of substrate W and particle, thereby can will peel off reliably and remove attached to the particle on the substrate W.

In the above-described embodiment, though the gas that is imported in the chamber 11 is N ₂Gas, but be not limited thereto, also can be helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon unreactable gass such as (Rn), in addition, also can use O ₂Gas etc.

In the above-described embodiment, though with sheathed heater constant resistance body 25 heating pick-ups 24, be not limited thereto, also can be with the lamp heating pick-up 24 of infrared ray etc.

In the above-described embodiment, though the vibration that its frequency is 40kHz takes place vibration generating unit 33, being not limited thereto, can occurrence frequency be the vibration of 16000～10MHz also.In addition, preferably its frequency is 16000～40kHz.

In the above-described embodiment, as conveying arm 12,32,42, though used the articulated arm handling device, the form of conveying arm is not limited thereto, and also can be the frogleg handling device.

In addition, in the above-described embodiment, though conveying arm 12,32,42 will be peeled off and remove attached to the particle on the substrate W, but be not limited thereto, in not by the course of conveying of the substrate of particle contamination or base board delivery device 10,30,40 when unloaded, by implementing above-mentioned processing, can prevent the pollution of particle to substrate.

In addition, in the above-described embodiment, as mentioned above, the thermal stress of utilizing the difference owing to the intrinsic linear expansion factor of material to take place, particle can be peeled off from substrate W, so can predict under the situation of the material of contingent particle in chamber 11, preferably with having the material of the linear expansion factor different, the indoor section of the inwall of covering chamber 11 and conveying arm 12,32,42 etc. with the linear expansion factor of contingent particle.Specifically, conveying arm 12,32,42 preferably has the top layer that the material by the regulation different with the linear expansion factor of the particle that takes place constitutes near conveying arm 12,32,42.Therefore, can on the interface of the indoor section of the inwall of chamber 11 and conveying arm 12,32,42 etc. and particle big thermal stress take place, therefore can will peel off reliably and remove attached to the particle on the indoor section.

In order to confirm its effect, use SiO ₂, Si, SiN, W, Cu, PR and CF series polymer covered substrate respectively, with SiO ₂Particle diffusion has been measured the SiO on the substrate when heating this substrate on each substrate that covers with above-mentioned various materials ₂The rate of removing of particle as shown in Figure 8, and is used SiO ₂SiO on the substrate W that covers ₂The rate of removing of particle compares, with the Si on the substrate W of teflon CF series polymers such as (registered trade mark (RTM)s) covering _OThe rate of the removing height of particle.Therefore, for example can predict generation Si or SiO ₂Under the situation of particle, preferably use teflon CF series polymers such as (registered trade mark (RTM)s) to cover indoor section, in addition, take place under the situation of CF series polymer predicting, preferably use SiO as particle ₂Cover indoor section.Therefore, can improve and remove rate attached to the particle on the indoor section.In addition, under the situation on the surface of using material covered substrate W, also can obtain same effect with linear expansion factor different with the linear expansion factor of contingent particle.

Fig. 9 is a constructional drawing of roughly representing the substrate board treatment with base board delivery device of the 4th embodiment of the present invention.

In Fig. 9, have as the plasma process system 50 of substrate board treatment: first processing unit 51 and second processing unit 52 that substrate W are carried out etch processes; Substrate is moved into and is taken out of objective table 53; And the control unit 80 of the action of control plasma process system 50.

First processing unit 51 has: have couple substrate W to carry out the plasma processing apparatus 1a of the process chamber 2a of etch processes; Be connected by the family of power and influence 55a that can open and close airtightly on the process chamber 2a of plasma processing apparatus 1a, substrate W moved into the conveying chamber 56a that takes out of process chamber 2a; And be connected on the conveying chamber 56a by the family of power and influence 57a that can open and close airtightly, substrate W is moved into the load locking room 58a that takes out of conveying chamber 56a.In addition, second processing unit 52 is identical with the structure of first process chamber 51, so the cooresponding numbering of numbering that will attach with each structural element of first process chamber 51 is given each structural element of second processing unit 52, omits its explanation.

Conveying chamber 56a is configured can eliminating particle etc. and carry out vacuum exhaust, in the inside of conveying chamber 56a, be provided with between process chamber 2a, load locking room 58a and conveying chamber 56a, carry out that moving into of substrate W taken out of, for example as the conveying arm 59a of the articulated arm handling device of the articulated structure of flexible and rotation.In addition, be provided with the mounting table 60a of energy mounting substrate W at the front end of conveying arm 59a.

Load locking room 58a also is configured and can removes residue and carry out vacuum exhaust, and inside is provided with the receiving station 62a of energy mounting substrate W.On receiving station 62a, also can as required cooling collar be set, make the wafer cooling of handling, heating lamp perhaps is set, the substrate W before handling is carried out preheating.In addition, also receiving station 62a itself can be made multi-segment structure, can a plurality of substrate W of mounting.

Substrate is moved into and is taken out of objective table 53 and roughly be the cuboid box-shaped, in its side by opening and closing the load locking room 58a that the family of power and influence 64a that constitutes and family of power and influence 64b connecting first processing unit 51 and the load locking room 58b of second processing unit 52 airtightly, in addition, on one end thereof, has orientation room 72, the optical pickocff 74 that the inside of this orientation room 72 has rotation mounting table 73 and the periphery of substrate W carried out optical detection.And orientation room 72 utilizes optical pickocff 74, and the orientation plane of detection substrate W or otch etc. utilize rotation mounting table 73 to make substrate W rotation, position.

In addition, move at substrate and to take out of in the objective table 53, portion is provided with conveying arm 65 within it, conveying arm 65 is configured and can moves along its not shown guide rail that vertically disposes, conveying arm 65 for example has the multi-joint fork of being used by separately-driven transfer wafers 66,67, and multi-joint fork 66,67 is configured flexible and rotation.In addition, conveying arm 65 has the arm 68,69 that can control substrate W respectively respectively at the front end of multi-joint fork 66,67.

Conveying arm 65 can will be housed in the substrate W as in the hoop body 76 of substrate box that is positioned on the back described hoop body platform 54 and be transported on the receiving station 62 of the rotation mounting table 73 of orientation room 72 and load locking room 58, in addition, the substrate W that can will be positioned on the receiving station 62 is transported on the rotation mounting table 73 and in hoop body 76a～76c.In addition, have 25 grooves, can accommodate 25 substrate W in each hoop body 76a～76c inside.In addition, the substrate W that conveying arm 65 can will be positioned on the receiving station 62a of load locking room 58a of first processing unit 51 is transported in the described substrate-placing chamber, back 90, and the substrate W that can will be positioned in this substrate-placing chamber 90 is transported on the receiving station 62b of the load locking room 58b in second processing unit 51 simultaneously.

In addition, substrate is moved into and is taken out of objective table 53 on the side relative with the side that connects load locking room 58a and load locking room 58b, 4 switchings mouth 77a～77d as peristome is freely arranged, corresponding to the position of each mouthful among mouth 77a～77c, have from substrate move into the side of taking out of objective table 53 outstanding as flat-bed hoop body platform 54; And corresponding with the position of mouth 77d, temporary transient mounting has been carried out the substrate-placing chamber 90 as base board delivery device of the substrate W of etch processes.Each hoop body platform 54 has the mounting surface 78 of a hoop body 76 of mounting; And the hoop body opener (not shown) that opens and closes the lid that is positioned in the hoop body 76 on this mounting surface 78.

Figure 10 is a constructional drawing of roughly representing substrate-placing chamber 90.The structure of substrate-placing chamber 90 is substantially the same with structure shown in Figure 1, and identical structural element is marked with same reference numbering, and the repetitive description thereof will be omitted, below the different part of explanation.

In Figure 10, substrate-placing chamber 90 is configured can eliminating particle etc. and carry out vacuum exhaust, has: the box-type chamber 91 (reception room) of the safety ground of aluminium or stainless steel; The mounting table of mounting substrate (mounting portion) 92; On the sidewall of substrate-placing chamber 90, be connected on mouthful 77d, conveying arm 65 is moved into moving into of making that substrate W passes through when taking out of substrate-placing chamber 90 with substrate W and is taken out of mouthfuls 93; The temperature control apparatus 94 that the temperature of control mounting table 92 is used; Supersonic zone takes place, for example its frequency is the vibration generating unit 95 of the vibration usefulness of 40kHz; And be connected on the vibration generating unit 95, be fixed on the oscillating portion 96 on the pick-up mounting table 92 simultaneously.This is moved into and takes out of mouthful 93 usefulness switching mouth 77d sealing freely.

Temperature control apparatus 94 has: the temperature sensor 97 that the inner wall temperature of detection chambers 91 is used; By with infrared radiation on the top that is configured in chamber 91 and be positioned on the substrate W on the mounting table 92 lamp 98 of heated substrates W; And the control part 99 that is electrically connected, controls simultaneously the action of lamp 98 with lamp 98.In addition, the light of launching from lamp 98 is not limited to infrared ray, so long as the light of substrate W heating can be got final product, in addition, preferably has the light of the wavelength that does not influence the resist film that forms on substrate W.

This control part 99 is according to the inner wall temperature of the chamber 91 that detects with temperature sensor 97, and control is from the ultrared radiant quantity of lamp 98 radiation, the temperature of coming control basal plate W.In addition, under substrate W was not positioned in situation on the mounting table 92, according to the inner wall temperature of the chamber 91 that detects with temperature sensor 97, control was controlled the temperature of mounting table 92 from the ultrared radiant quantity of lamp 98 radiation.Therefore, between the inwall of substrate W and chamber 91 and between the inwall of mounting table 92 and chamber 91, form the thermal drop of regulation respectively.In addition, mounting table 92 preferably is controlled in than the temperature more than the high 30K of inner wall temperature of chamber 91.

In the plasma process system 50 that constitutes as mentioned above, when handling the untreated substrate W in the hoop body 76, hoop body opener is opened the lid of hoop body 76, and open corresponding among the mouth 77a～77c of the hoop body platform 54 of this hoop body 76 of mounting any one or a plurality of, the substrate W that will be housed in the hoop body 76 by conveying arm 65 sends, then, load locking room 58a and conveying chamber 56a by in orientation room 72, first processing unit 51 send into substrate W among the process chamber 2a of plasma processing apparatus 1a.In addition, in process chamber 2a, carried out conveying chamber 56a and the load locking room 58a of the substrate W of predetermined process, be fed to substrate-placing chamber 90 by first processing unit 51.

Be admitted to the substrate W in the substrate-placing chamber 90, utilize conveying arm 65 to be positioned on the mounting table 92,, utilize from the infrared ray of lamp 98 radiation and heat according to inner wall temperature with temperature sensor 97 detected chambers 91.Therefore, on the inwall of substrate W and chamber 91, form the temperature desired gradient, in addition, also on the inwall of mounting table 92 and chamber 91, form the temperature desired gradient.In addition, utilize 95 couples of substrate W of vibration generating unit to apply the vibration of supersonic zone.After this, carry out the removing and the vacuum exhaust of the particle in the chamber 91.

After having carried out the removing and vacuum exhaust in the chamber 91, in substrate-placing chamber 90, carried out substrate W after heating and vibration apply by load locking room 58b and conveying chamber 56b in second processing unit 52, be admitted among the process chamber 2b of plasma processing apparatus 1b the plasma treatment of in process chamber 2b, stipulating.

If employing present embodiment, then because according to inner wall temperature with temperature sensor 97 detected chambers 91, control is from the ultrared radiant quantity of lamp 98 radiation, on mounting portion 92 of heating and substrate W, form the thermal drop of regulation by this light, so during the multiple processing of being undertaken by first processing unit 51 and 52 couples of substrate W of second processing unit, under situation about substrate W being transported in the chamber 91, the thermal stress that utilization takes place on the interface that is positioned in substrate on the mounting table 92 and particle, particle is peeled off from substrate W, can utilize to thermophoresis power away from the directive effect of substrate W, this particle is removed from substrate W, can will be peeled off removal reliably thus attached to the particle on the substrate W.

In the present embodiment, though be provided with independently substrate-placing chamber 90, also can make among both at least one of load locking room 58a and load locking room 58b have function as the substrate-placing chamber.In the case, have load locking room 58 as the function of substrate-placing chamber and have the structure same with substrate-placing chamber 90.

In addition, in the present embodiment, though plasma process system 50 has and substrate W is carried out first processing unit 51 of etch processes and second processing unit 52 and substrate moves into and take out of objective table 53, this substrate is moved into and is taken out of objective table 53 and in its side substrate-placing chamber 90 is arranged, but be not limited thereto, as shown in figure 11, also can have: be connected on the described a plurality of process chambers in back by family of power and influence's (not shown) that can open and close airtightly, substrate W moved into the conveying assembly 100 of taking out of a plurality of process chambers; Be configured in the transfer arm 101 of the both arms type that the conveying arms by two joint types in the conveying assembly 100 constitute; Be configured in conveying assembly 100 5 process chamber 102A～102E on every side radially; And be connected on the conveying assembly 100 by family of power and influence's (not shown) that can open and close airtightly, utilize process chamber 102A～102E to carry out the substrate-placing chamber 90 of substrate feed chamber of the substrate W of etch processes as temporary transient mounting.

In plasma process system shown in Figure 11, untreated substrate W is sent in the conveying assembly 100 by transfer arm 101, secondly, sends in predetermined process chamber among process chamber 102A～102E, for example process chamber 102A by family of power and influence's (not shown).In addition, the substrate W that has carried out predetermined process in process chamber 102A passes through conveying assembly 100 by transfer arm 101, is transported in the substrate-placing chamber 90.

Be admitted to substrate W in the substrate-placing chamber 90 by transfer arm 101 mountings on mounting table 92, according to inner wall temperature, utilize from the infrared ray of lamp 98 radiation and heat with temperature sensor 97 detected chambers 91.Therefore, on the inwall of substrate W and chamber 91, form the temperature desired gradient, in addition, also on the inwall of mounting table 92 and chamber 91, form the temperature desired gradient.In addition, utilize 95 couples of substrate W of vibration generating unit to apply the vibration of supersonic zone.After this, carry out the removing and the vacuum exhaust of the particle in the chamber 91.

After having carried out the removing and vacuum exhaust of the particle in the chamber 91, in substrate-placing chamber 90, carried out the substrate W after heating and vibration apply, utilize transfer arm 101 by conveying assembly 100, be admitted in another process chamber, for example process chamber 102B plasma treatment of in process chamber 102B, stipulating.

In addition, substrate W is admitted to the moment in the substrate-placing chamber 90, be not limited to when process chamber 102A sends into process chamber 102B, between any two process chambers in process chamber 102A～102E, it is also passable when a process chamber is transported to another process chamber, in addition, even also passable after a plurality of the finishing dealing with in the plural process chamber in process chamber 102A～102E.

In the present embodiment, though temperature control apparatus 94 has the top that is configured in chamber 91, and by infrared ray etc. is radiated on the substrate W that is positioned on the mounting table 92, lamp 98 to substrate W heating, but be not limited thereto, the inside that mounting table of being embedded in 92 also can be arranged, and for example sheathed heater (sheath heater) the constant resistance body of heating mounting table 92 and substrate W.Therefore, can control the temperature of mounting table 92, on mounting table 92, form the thermal drop of regulation, so utilize the thermal stress that on the interface that is positioned in substrate W on the mounting table 92 and particle, takes place, particle is peeled off from substrate W, can utilize to thermophoresis power, this particle is removed from substrate W, therefore can will peel off reliably and remove attached to the particle on the substrate W away from the directive effect of substrate W.

In the present embodiment, can predict under the situation of the material of contingent particle in chamber 91, identical with above-mentioned first embodiment, preferably with the material that has with the big different linear expansion factor of the linear expansion factor of contingent particle, cover the indoor section of the inwall of chamber 11 and mounting table 92 etc.Therefore, can on the interface of the indoor section of the inwall of chamber 91 and mounting table 92 etc. and particle big thermal stress take place, therefore can will peel off reliably and remove attached to the particle on the indoor section.

In addition, the storage medium of the procedure code of the software by will having write down the function that realizes each above-mentioned embodiment is supplied with said system or device, the computing machine of this system (or CPU, MPU etc.) is read and is stored in the procedure code in the storage medium and carries out it, also can reach purpose of the present invention.

In the case, the procedure code of reading from storage medium itself becomes realizes new function of the present invention, and this procedure code and the storage medium and the program of having stored this procedure code just constitute the present invention.

In addition, as supplying with the storage medium that procedure code is used, for example, can use soft (registered trade mark (RTM)) dish, hard disk, CD, photomagneto disk, CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW, disk, Nonvolatile memory card, ROM etc.Perhaps, by downloading other not shown computing machines on being connected internet, commercial network or local area network etc. or the data bank etc., supply with said procedure.

In addition, the procedure code that computing machine is read by execution, can not only realize the function of each above-mentioned embodiment, and comprise indication according to this procedure code, Dong Zuo OS (operating system) etc. carries out part or all of actual processing on computers, handles the situation of the function that realizes each above-mentioned embodiment by this.

In addition, after comprising that also the procedure code of reading from storage medium is written into the function expansion card that inserts the computing machine or connects in the memory device that has on computers the functional expansion unit, indication according to this procedure code, the CPU that has in this function expansion card or the functional expansion unit etc. carries out part or all of actual processing, handles the situation of the function that realizes each above-mentioned embodiment by this.

Embodiment

Secondly, specifically describe embodiments of the invention.In addition, in following embodiment, in the process chamber of the processing equipment of having set base board delivery device 10 and base board delivery device 30, carried out simulated experiment.

At first, in having set base board delivery device 10 process chambers, preparation is 0.6 micron SiO in advance with particle diameter ₂Particle is positioned in the Si wafer on the lower electrode of having set the conveying arm in the process chamber attached to lip-deep Si wafer.Secondly, on one side with the pressure control in the process chamber at 0.13kPa (1.0Torr), lower electrode is heated up, measured the SiO that in this temperature-rise period, peels off from the Si wafer ₂The number of particle (individual/minute).In addition, the temperature of upper electrode of heal differential of the inner wall temperature of having set base board delivery device 10 and Si wafer and the heal differential of Si wafer have been obtained.

Equally, on one side with the pressure control in the process chamber at 1.3kPa (10Torr), lower electrode is heated up on one side, measured the SiO that in this temperature-rise period, peels off from the Si wafer ₂The number of particle (individual/minute).It is the results are shown among Figure 12.

Thus, the heal differential of the temperature of upper electrode and Si wafer is more than 150 ℃ the time as can be known, the SiO that peels off from the Si wafer ₂Granule number sharply increases.That is, as can be seen from Figure 12, according to the effect corresponding to the thermophoresis power of the pressure in the process chamber, the SiO on the Si wafer ₂The overburden amount of particle is relevant with pressure.

Secondly, in process chamber, preparation is 0.6 micron SiO in advance with particle diameter ₂Particle is positioned in the Si wafer on the lower electrode attached to lip-deep Si wafer.Secondly, lower electrode is heated to the temperature of regulation, on one side with the pressure control in the process chamber at 0.0013kPa (0.01Torr), with specific time the Si wafer is positioned on the lower electrode on one side.Measured the SiO that in this specified time, peels off from the Si wafer ₂The number of particle from this result of a measurement, has been obtained the SiO on the Si wafer ₂The particle slip.In addition, make pressure in the process chamber change to 0.0013～130kPa (0.01～1000Torr), carried out same measurement.It is the results are shown among Figure 13.

Thus, as can be known the pressure control in the process chamber (0.1～100Torr) time, can be made many SiO at 0.013～13kPa ₂Particle is peeled off from the Si wafer, preferably the pressure control in the process chamber (1.0～10Torr) time, can be made many SiO at 0.13～1.3kPa ₂Particle is peeled off from the Si wafer.That is, because near the thermophoresis power the Si wafer is relevant with the pressure in the process chamber, so as can be known can be with the SiO that is positioned on the Si wafer ₂Particle is peeled off more reliably.

In addition, same as the previously described embodiments in the process chamber of having set base board delivery device 30, preparation is 0.6 micron SiO in advance with particle diameter ₂Particle is positioned on the lower electrode attached to lip-deep Si wafer.Secondly, the pressure control in the process chamber at 1.3kPa (10Torr), being positioned in lower electrode after last 40 minute with the Si wafer, is that the vibration of 40kHz is added on the Si wafer with frequency.At this moment, measured the SiO that peels off from the Si wafer ₂The number of particle.It is the results are shown among Figure 14.

Thus, by being added in, ultrasonic vibration adhered to SiO as can be known ₂On the Si wafer of particle, can be with many SiO ₂Particle is peeled off from the Si wafer.

Claims (41)

1, a kind of substrate carrying mechanism of conveying substrate is characterized in that, this substrate carrying mechanism has:

The mounting portion of mounting substrate;

The wrist that is connected in the described mounting portion and described mounting portion is moved; With

Control the temperature control apparatus of the temperature of described mounting portion,

Described temperature control apparatus makes described mounting portion form the thermal drop of regulation,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

2, substrate carrying mechanism according to claim 1 is characterized in that:

Described temperature control apparatus has: the test section that detects the temperature of exterior circumferential; Heat the heating part of described mounting portion; With the temperature of basis, control the control part of the action of described heating part by the detected exterior circumferential of described test section.

3, substrate carrying mechanism according to claim 2 is characterized in that:

Described control part is controlled at the temperature of described mounting portion than the temperature more than the high 30K of temperature of exterior circumferential.

4, a kind of base board delivery device, it is characterized in that, have: accommodate substrate reception room, be configured in this reception room and the substrate carrying mechanism of conveying substrate, make described exhaust portion of accommodating indoor exhaust and gas is imported gas introduction part in the described reception room

Described substrate carrying mechanism has: the mounting portion of mounting substrate; The wrist that is connected in this mounting portion and described mounting portion is moved; With the temperature control apparatus of the temperature of the described mounting of control portion, described temperature control apparatus makes described mounting portion form the thermal drop of regulation,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

5, base board delivery device according to claim 4 is characterized in that:

Described temperature control apparatus has the test section that detects the temperature in the described reception room; Heat the heating part of described mounting portion; With according to by the temperature in the detected described reception room of described test section, control the control part of the action of described heating part.

6, base board delivery device according to claim 5 is characterized in that:

Described control part is controlled at the temperature of described mounting portion than the temperature more than the high 30K of the temperature in the described reception room.

7, according to claim 5 or 6 described base board delivery devices, it is characterized in that:

Described gas introduction part has according to by the temperature in the detected described reception room of described test section, controls the gas temperature control apparatus of temperature of gas of the regulation of described importing.

8, according to any described base board delivery device in the claim 4 to 6, it is characterized in that:

The pressure control device that also has the pressure in the described reception room of control.

9, base board delivery device according to claim 8 is characterized in that:

Described pressure control device with the pressure control in the described reception room 1.3 * 10 ^{- 2}～1.3kPa (0.1～10Torr).

10, a kind of substrate carrying mechanism of conveying substrate is characterized in that, this substrate carrying mechanism has:

The mounting portion of mounting substrate; The wrist that is connected in the described mounting portion and described mounting portion is moved; Control the temperature control apparatus of the temperature of described mounting portion; The vibration generating unit of the vibration usefulness of supersonic zone takes place; Be connected on the described vibration generating unit, and be fixed on oscillating portion in the described mounting portion, described temperature control apparatus makes described mounting portion form the thermal drop of regulation,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

11, substrate carrying mechanism according to claim 10 is characterized in that:

Described temperature control apparatus has the test section of the temperature that detects exterior circumferential; Heat the heating part of described mounting portion; With the temperature of basis, control the control part of the action of described heating part by the detected exterior circumferential of described test section.

12, substrate carrying mechanism according to claim 11 is characterized in that:

Described control part is controlled at the temperature of described mounting portion than the temperature more than the high 30K of temperature of exterior circumferential.

13, a kind of base board delivery device, have: accommodate substrate reception room, be configured in this reception room and the substrate carrying mechanism of conveying substrate, make described exhaust portion of accommodating indoor exhaust and gas is imported gas introduction part in the described reception room, it is characterized in that:

Described substrate carrying mechanism has: the mounting portion of mounting substrate; The wrist that is connected in this mounting portion and described mounting portion is moved; Control the temperature control apparatus of the temperature of described mounting portion; The vibration generating unit of the vibration usefulness of supersonic zone takes place; Be connected on the described vibration generating unit, and be fixed on oscillating portion in the described mounting portion, described temperature control apparatus makes described mounting portion form the thermal drop of regulation,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

14, base board delivery device according to claim 13 is characterized in that:

Described temperature control apparatus has the test section that detects the temperature in the described reception room; Heat the heating part of described mounting portion; With according to by the temperature in the detected described reception room of described test section, control the control part of the action of described heating part.

15, base board delivery device according to claim 14 is characterized in that:

Described control part is controlled at the temperature of described mounting portion than the temperature more than the high 30K of the temperature in the described reception room.

16, according to claim 14 or 15 described base board delivery devices, it is characterized in that:

Described gas introduction part has according to by the temperature in the detected reception room of described test section, controls the gas temperature control apparatus of temperature of gas of the regulation of described importing.

17, according to any described base board delivery device in the claim 13 to 15, it is characterized in that:

Also has the pressure control device that the pressure in the described reception room of control is used.

18, base board delivery device according to claim 17 is characterized in that:

Described pressure control device with the pressure control in the described reception room 1.3 * 10 ^{- 2}～1.3kPa (0.1～10Torr).

19, a kind of base board delivery device, have: accommodate substrate reception room, be configured in the described substrate of mounting in this reception room mounting portion, make described exhaust portion of accommodating indoor exhaust and gas imported gas introduction part in the described reception room, it is characterized in that:

Temperature control apparatus with temperature of the described mounting of control portion, described temperature control apparatus make described mounting portion form the thermal drop of regulation,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

20, base board delivery device according to claim 19 is characterized in that:

Described temperature control apparatus has: the test section that detects the temperature in the described reception room; Heat the heating part of described mounting portion; With according to by the temperature in the detected described reception room of described test section, control the control part of the action of described heating part.

21, base board delivery device according to claim 20 is characterized in that:

Described control part is controlled at the temperature of described mounting portion than the temperature more than the high 30K of the temperature in the described reception room.

22, according to claim 20 or 21 described base board delivery devices, it is characterized in that:

Described gas introduction part has according to by the temperature in the detected reception room of described test section, controls the gas temperature control apparatus of temperature of gas of the regulation of described importing.

23, according to any described base board delivery device in the claim 19 to 21, it is characterized in that:

The pressure control device that also has the pressure in the described reception room of control.

24, base board delivery device according to claim 23 is characterized in that:

Described pressure control device with the pressure control in the described reception room 1.3 * 10 ^{- 2}～1.3kPa (0.1～10Torr).

25, a kind of particle of substrate carrying mechanism is removed method, it is characterized in that,

This substrate carrying mechanism has: the mounting portion of mounting substrate and the wrist that is connected in the described mounting portion and described mounting portion is moved,

This particle method of removing comprises the temperature controlling step of the temperature of the described mounting of control portion, and described temperature controlling step forms the thermal drop of regulation in described mounting portion,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

26, particle according to claim 25 is removed method, it is characterized in that:

Described temperature controlling step comprises: the detection step that detects the temperature of exterior circumferential; With according to the temperature that detects the detected exterior circumferential of step by this, heat the heating steps of described mounting portion.

27, particle according to claim 26 is removed method, it is characterized in that:

Described temperature controlling step is controlled at the temperature of described mounting portion than the temperature more than the high 30K of temperature of exterior circumferential.

28, a kind of particle of base board delivery device is removed method, it is characterized in that,

This base board delivery device has: accommodate the reception room of substrate, by the mounting portion that is configured in mounting substrate in this reception room and be connected in this mounting portion and substrate carrying mechanism that wrist that described mounting portion is moved constitutes, make described exhaust portion of accommodating indoor exhaust and gas is imported gas introduction part in the described reception room

This particle method of removing comprises the temperature controlling step that the temperature of the described mounting of control portion is used, and described temperature controlling step makes described mounting portion form the thermal drop of regulation,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

29, particle according to claim 28 is removed method, it is characterized in that:

Described temperature controlling step comprises: the detection step that detects the temperature in the described reception room; With according to the temperature that detects by this in detected described reception room of step, heat the heating steps of described mounting portion.

30, particle according to claim 29 is removed method, it is characterized in that:

Described controlled step is controlled at the temperature of described mounting portion than the temperature more than the high 30K of the temperature in the described reception room.

31, remove method according to claim 29 or 30 described particles, it is characterized in that:

Also comprise according to by the temperature in the detected described reception room of described detection step, control the gas temperature controlled step of temperature of gas of the regulation of described importing.

32, remove method according to any described particle in the claim 28 to 30, it is characterized in that:

The pressure control step that also comprises the pressure in the described reception room of control.

33, particle according to claim 32 is removed method, it is characterized in that:

Described pressure control step with the pressure control in the described reception room 1.3 * 10 ^{- 2}～1.3kPa (0.1～10Torr).

34, a kind of particle of substrate carrying mechanism is removed method, it is characterized in that,

This substrate carrying mechanism has: the mounting portion of mounting substrate; With the wrist that is connected in the described mounting portion and described mounting portion is moved,

This particle method of removing comprises: the temperature controlling step of controlling the temperature of described mounting portion; The vibration that is added in the described mounting portion with vibration with supersonic zone applies step, and described temperature controlling step forms the thermal drop of regulation in described mounting portion,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

35, a kind of particle of base board delivery device is removed method, it is characterized in that,

This base board delivery device has: accommodate the reception room of substrate, by the mounting portion that is configured in mounting substrate in this reception room and be connected in this mounting portion and substrate carrying mechanism that wrist that described mounting portion is moved constitutes, make described exhaust portion of accommodating indoor exhaust and gas is imported gas introduction part in the described reception room

This particle method of removing comprises: the temperature controlling step of controlling the temperature of described mounting portion; The vibration that is added in the described mounting portion with vibration with supersonic zone applies step, and described temperature controlling step is the formation temperature gradient in described mounting portion,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

36, a kind of particle of base board delivery device is removed method, it is characterized in that,

This base board delivery device has: accommodate substrate reception room, be configured in the described substrate of mounting in the described reception room mounting portion, make described exhaust portion of accommodating indoor exhaust and gas imported gas introduction part in the described reception room,

This particle method of removing comprises the temperature controlling step that the temperature of the described mounting of control portion is used, and described temperature controlling step forms the thermal drop of regulation in described mounting portion,

The top layer that described mounting portion has the material by regulation to constitute, the linear expansion factor of the material on this top layer is different with near the linear expansion factor of the particle that takes place described mounting portion.

37, particle according to claim 36 is removed method, it is characterized in that:

Described temperature controlling step comprises: the detection step that detects the temperature in the described reception room; With according to the temperature that detects by this in detected described reception room of step, heat the heating steps of described mounting portion.

38, remove method according to the described particle of claim 37, it is characterized in that:

Described temperature controlling step is controlled at the temperature of described mounting portion than the temperature more than the high 30K of the temperature in the described reception room.

39, remove method according to claim 37 or 38 described particles, it is characterized in that:

Also comprise according to by the temperature in the detected reception room of described detection step, control the gas temperature controlled step of temperature of gas of the regulation of described importing.

40, remove method according to any described particle in the claim 36 to 38, it is characterized in that:

The pressure control step that also comprises the pressure in the described reception room of control.

41, remove method according to the described particle of claim 40, it is characterized in that:

Described pressure control step with the pressure control in the described reception room 1.3 * 10 ^{- 2}～1.3kPa (0.1～10Torr).

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