CN100585869C - Structure and method for organic LED integrating contact resistance of color filter - Google Patents
Structure and method for organic LED integrating contact resistance of color filter Download PDFInfo
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- CN100585869C CN100585869C CN200610067443A CN200610067443A CN100585869C CN 100585869 C CN100585869 C CN 100585869C CN 200610067443 A CN200610067443 A CN 200610067443A CN 200610067443 A CN200610067443 A CN 200610067443A CN 100585869 C CN100585869 C CN 100585869C
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Abstract
A structure of contact resistance on integrated color filter at organic LED is featured as filling metal in contact well on metal layer of source/drain electrode or filling metal in contact well on poly-silicon island at position corresponding to said source/ drain electrode metal layer to effectively decrease contact resistance between pixel electrode and film transistor for improving quality of color display.
Description
Technical field
The present invention relates to a kind of structure and method of improving improving contact resistance of organic LED integral color filter, particularly relate to a kind of contact well on the source/drain metal layer and insert metal, or on polysilicon island, insert the structure and the method for metal corresponding to the contact well of source/drain metal layer position, with the contact resistance between effective reduction pixel electrode and thin-film transistor, improve the quality that color shows.
Background technology
Organic Light Emitting Diode (OLED) is for image quality that realizes high-fineness and the decay of avoiding different colours, and design direction has changed the single white light source of integral color filter into, therefore significantly improves screen resolution and display sizes.The making flow process of general integral color filter adopts colored filter (Color Filter on Array on array, COA) structure, using down, the emission type white organic LED is light emitting source, but because of the surface roughness of colored filter after solidifying higher, need one deck flatness layers that increase in order to reduce its roughness more, this will make display thickness increase, and thereby increase the contact resistance resistance of pixel electrode, make that the conductivity between thin-film transistor component when operation source/drain metal and the Organic Light Emitting Diode bottom electrode is relatively poor, easily cause burning of metal and cause the Organic Light Emitting Diode assembly can't operate as normal.
The structure of the disclosed OLED integrated colour filter of known technology, as described in United States Patent (USP) No. 6515428 " Pixel Structure of an Organic Light Emitting Diode DisplayDevice and its Manufacturing Method ", on colored filter, increase by a flatness layer in order to reduce this body structure surface roughness, as shown in Figure 1, wherein form a polysilicon island 120 on the substrate 110, be formed with an oxide layer 130 on this polysilicon island 120, wherein a gate metal layer 135 is formed on this oxide layer 130 corresponding to the centre position of this polysilicon island 120, form a dielectric layer 140 on this oxide layer 130 again and cover this gate metal layer 135, then source electrode 150 is passed this dielectric layer 140 and is connected with the relevant position of this polysilicon island 120 with this oxide layer 130, form a colored filter 160 afterwards on this source/drain metal layer 150, on this colored filter 160, form a flatness layer 170 again, form a pixel electrode layer 180 afterwards again on this flatness layer 170, this pixel electrode layer 180 passes this flatness layer 170 and this colored filter 160 and contacts well and be connected with this source/drain metal layer 150 to form one.In this known configurations, because colored filter 160 adds that the thickness of flatness layer 170 is excessive, cause pixel electrode layer 180 need fill out darker contact well, when electric current makes the metal deterioration in when conduction because of heat, thereby make the Metal Contact too high in resistance between pixel electrode layer 180 and thin-film transistor, conductivity during thin-film transistor component operation just between source/drain metal and pixel electrode is relatively poor, cause burning of metal easily and cause the Organic Light Emitting Diode assembly can't operate as normal, this also be to cause the organic LED panel color to show one of uneven principal element.
Because the structure of known OLED integrated colour filter and the method generation causes the Metal Contact too high in resistance between pixel electrode and thin-film transistor because of the thickness of colored filter and flatness layer is excessive problem, the present invention proposes a kind of structure and method of improving improving contact resistance of organic LED integral color filter, this structure and method mainly are that the contact well on the source/drain metal layer is inserted metal, or on polysilicon island, insert metal corresponding to the contact well of source/drain metal layer position, with the contact resistance between effective reduction pixel electrode and thin-film transistor, improve the quality that color shows.
Summary of the invention
The object of the present invention is to provide a kind of structure of improving improving contact resistance of organic LED integral color filter,, improve the quality that color shows with the contact resistance between effective reduction pixel electrode and thin-film transistor.
Another object of the present invention is to provide a kind of method of improving improving contact resistance of organic LED integral color filter,, improve the quality that color shows with the contact resistance between effective reduction pixel electrode and thin-film transistor
To achieve these goals, the invention provides a kind of structure and method of improving improving contact resistance of organic LED integral color filter, this structure and method mainly are that the contact well on the source/drain metal layer is inserted metal, or on polysilicon island, insert metal corresponding to the contact well of source/drain metal layer position, with the contact resistance between effective reduction pixel electrode and thin-film transistor, improve the quality that color shows.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the structure chart of the OLED integrated colour filter of known technology;
Fig. 2 improves the first example structure figure of improving contact resistance of organic LED integral color filter for the present invention;
Fig. 3 improves the second example structure figure of improving contact resistance of organic LED integral color filter for the present invention;
Fig. 4 improves the 3rd example structure figure of improving contact resistance of organic LED integral color filter for the present invention.
Wherein, Reference numeral:
110,210,310,410～substrate
120,220,320,420～polysilicon island
130,230,330,430～oxide layer
135,235,335,435～gate metal layer
140,240～dielectric layer
150,250,450～source/drain metal layer
160,260,340,440～colored filter
170,270,350,460～flatness layer
180,280,360,470～pixel electrode layer
275,355,445～metal level
Embodiment
Figure 2 shows that the present invention improves first example structure of improving contact resistance of organic LED integral color filter, wherein form a polysilicon island 220 on the substrate 210, be formed with an oxide layer 230 on this polysilicon island 220, wherein a gate metal layer 235 is formed on this oxide layer 230 corresponding to the centre position of this polysilicon island 220, form a dielectric layer 240 on this oxide layer 230 again and cover this gate metal layer 235, then source electrode 250 is passed this dielectric layer 240 and is connected with the relevant position of this polysilicon island 220 with this oxide layer 230, form a colored filter 260 afterwards on this metal level 250, on this colored filter 260, form a flatness layer 270 afterwards, insert a metal level 275 and be connected in the well that contacts that passes this flatness layer 270 and this colored filter 260 more afterwards, on this metal level 275 and this flatness layer 270, form a pixel electrode layer 280 again with this source/drain metal layer 250.This first example structure, be used for improving the structure of above-mentioned known technology, by inserting a metal level with the well that contacts of this colored filter passing this flatness layer, can reduce the Metal Contact resistance between pixel electrode layer and thin-film transistor, and then the color that improves the Organic Light Emitting Diode assembly shows image quality and increases the service life.And because general colored filter is the minus photoresistance, so the mask pattern that is used for defining colored filter is with to insert the metal pattern that contacts well identical, so the present invention can share the light shield of colored filter and not need extra light shield.
The present invention improves the manufacture method of first embodiment of improving contact resistance of organic LED integral color filter, comprises the following steps:
(a) provide a substrate;
(b) on this substrate, form a polysilicon island;
(c) on this substrate, form an oxide layer, and this oxide layer covers this polysilicon island;
(d) form a gate metal layer on this oxide layer in centre position corresponding to this polysilicon island;
(e) on this oxide layer, form a dielectric layer, and this dielectric layer covers this gate metal layer;
(f) on this dielectric layer, offer several contact wells, make those contact wells run through this dielectric layer and this oxide layer and be communicated to the relevant position of this polysilicon island respectively;
(g) on this dielectric layer, form source electrode;
(h) on this source/drain metal layer, form a colored filter;
(i) on this colored filter, form a flatness layer;
(j) insert a metal level and be connected at the well that contacts that passes this flatness layer and this colored filter with this source/drain metal layer; And
(k) on this metal level and this flatness layer, form a pixel electrode layer.
Figure 3 shows that the present invention improves second example structure of improving contact resistance of organic LED integral color filter, wherein form a polysilicon island 320 on the substrate 310, be formed with an oxide layer 330 on this polysilicon island 320, wherein a gate metal layer 335 is formed on this oxide layer 330 corresponding to the centre position of this polysilicon island 320, form a colored filter 340 on this oxide layer 330 again and cover this gate metal layer 335, on this colored filter 340, form a flatness layer 350 afterwards, then again in passing this flatness layer 350, the well that contacts of this colored filter 340 and this oxide layer 330 is inserted a metal level 355 and is connected with the relevant position of this polysilicon island 320, on this metal level 355 and this flatness layer 350, form a pixel electrode layer 360 afterwards again, have the function of source/drain metal layer simultaneously at this pixel electrode layer 360 of this embodiment.This second example structure, it also is the structure that is used for improving above-mentioned known technology, by pass this flatness layer, this colored filter is inserted a metal level with the well that contacts of this oxide layer, can reduce the Metal Contact resistance between pixel electrode layer and thin-film transistor, and then the color that improves the Organic Light Emitting Diode assembly shows image quality and increases the service life.As aforementioned, because general colored filter is the minus photoresistance, so the mask pattern that is used for defining colored filter is with to insert the metal pattern that contacts well identical, so the present invention can share the light shield of colored filter and not need extra light shield.
The present invention improves the manufacture method of second embodiment of improving contact resistance of organic LED integral color filter, comprises the following steps:
(a) provide a substrate;
(b) on this substrate, form a polysilicon island;
(c) on this substrate, form an oxide layer, and this oxide layer covers this polysilicon island;
(d) form a gate metal layer on this oxide layer in centre position corresponding to this polysilicon island;
(e) on this oxide layer, form a colored filter, and this colored filter covers this gate metal layer;
(f) on this colored filter, form a flatness layer;
(g) on this flatness layer, offer several contact wells, make those contact wells run through this flatness layer, this colored filter and this oxide layer and be communicated to the relevant position of this polysilicon island respectively;
(h) insert a metal level and be connected at those contact wells with the relevant position of this polysilicon island;
(i) on this metal level and this flatness layer, form a pixel electrode layer.
Figure 4 shows that the present invention improves the 3rd example structure of improving contact resistance of organic LED integral color filter, wherein on a substrate 410, form a polysilicon island 420, be formed with an oxide layer 430 on this polysilicon island 420, wherein a gate metal layer 435 is formed on this oxide layer 430 corresponding to the centre position of this polysilicon island 420, form a colored filter 440 on this oxide layer 430 again and cover this gate metal layer 435, then insert a metal level 445 and be connected with the relevant position of this polysilicon island 420 at the well that contacts that passes this colored filter 440 and this oxide layer 430, on this metal level 445 and this colored filter 440, form source electrode 450 afterwards, on this source/drain metal layer 450, form a flatness layer 460 afterwards again and cover this colored filter 440, again formation one pixel electrode layer 470 and being connected on the contact well that passes this flatness layer 460 and this flatness layer 460 with the relevant position of this source/drain metal layer 450.This 3rd example structure, it also is the structure that is used for improving above-mentioned known technology, by inserting a metal level with the well that contacts of this oxide layer passing this colored filter, can reduce the Metal Contact resistance between pixel electrode layer and thin-film transistor, and then improve the color demonstration image quality and the useful life of Organic Light Emitting Diode assembly.On the other hand, this the 3rd example structure is before forming a pixel electrode layer 470, also can be shown in the contact well that passes this flatness layer 460 as first example structure inserts a metal level (not shown) and is connected with this source/drain metal layer 450, on this metal level and this flatness layer, form a pixel electrode layer 470 again, further reduce the Metal Contact resistance between pixel electrode layer and thin-film transistor.As aforementioned, because general colored filter is the minus photoresistance, so the mask pattern that is used for defining colored filter is with to insert the metal pattern that contacts well identical, so the present invention can share the light shield of colored filter and not need extra light shield.
The present invention improves the manufacture method of the 3rd embodiment of improving contact resistance of organic LED integral color filter, comprises the following steps:
(a) provide a substrate;
(b) on this substrate, form a polysilicon island;
(c) on this substrate, form an oxide layer, and this oxide layer covers this polysilicon island;
(d) form a gate metal layer on this oxide layer in centre position corresponding to this polysilicon island;
(e) on this oxide layer, form a colored filter, and this colored filter covers this gate metal layer;
(f) on this colored filter, offer several contact wells, make those contact wells run through this colored filter and this oxide layer and be communicated to the relevant position of this polysilicon island respectively;
(g) insert a metal level and be connected at those contact wells with the relevant position of this polysilicon island;
(h) on this metal level and this colored filter, form source electrode;
(i) on this colored filter, form a flatness layer, and this flatness layer covers this source/drain metal layer; And
(j) on the contact well that passes this flatness layer and this flatness layer, form a pixel electrode layer and be connected with this source/drain metal layer.
On the other hand, the manufacture method of this 3rd embodiment is before step (j) forms a pixel electrode layer, also can be shown in the contact well that passes this flatness layer as the manufacture method of first embodiment inserts a metal level (not shown) and is connected with this source/drain metal layer, on this metal level and this flatness layer, form a pixel electrode layer again, further reduce the Metal Contact resistance between pixel electrode layer and thin-film transistor.
In addition, the flatness layer among the present invention can be organic material or inorganic material; Dielectric layer wherein also can be organic material or inorganic material, and polysilicon island can be any semi-conducting material, and substrate then can be plastics, glass, quartz or silicon wafer; The metal level of inserting the contact well can be low-resistance metal of any tool or organic conductive material, and can be sandwich construction.
Comprehensively above-mentioned, the present invention proposes a kind of structure and method of improving improving contact resistance of organic LED integral color filter, this structure and method mainly are that the contact well on the source/drain metal layer is inserted metal, or on polysilicon island, insert metal corresponding to the contact well of source/drain metal layer position, with the contact resistance between effective reduction pixel electrode and thin-film transistor, improve the quality that color shows.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (33)
1, a kind of structure of improving improving contact resistance of organic LED integral color filter is characterized in that, comprising:
One substrate;
One polysilicon island is formed on this substrate;
One oxide layer is formed on this substrate and covers this polysilicon island;
One gate metal layer is formed on this oxide layer corresponding to the centre position of this polysilicon island;
One dielectric layer is formed on this oxide layer and covers this gate metal layer, and this dielectric layer offers several contact wells, and those contact wells run through this dielectric layer and this oxide layer;
Source electrode is formed on this dielectric layer, and is connected with the relevant position of this polysilicon island through those contact wells;
One colored filter is formed on this source/drain metal layer;
One flatness layer is formed on this colored filter;
One metal level is inserted and is passed this flatness layer and be connected with this source/drain metal layer with the contacting well of this colored filter; And
One pixel electrode layer is formed on this metal level and this flatness layer.
2, the structure of improving improving contact resistance of organic LED integral color filter according to claim 1 is characterized in that, this flatness layer is organic material or inorganic material.
3, the structure of improving improving contact resistance of organic LED integral color filter according to claim 1 is characterized in that, this dielectric layer is organic material or inorganic material.
4, the structure of improving improving contact resistance of organic LED integral color filter according to claim 1 is characterized in that, this polysilicon island is substituted by other any semi-conducting material islands.
5, the structure of improving improving contact resistance of organic LED integral color filter according to claim 1 is characterized in that, this substrate is plastics, glass, quartz or silicon wafer.
6, the structure of improving improving contact resistance of organic LED integral color filter according to claim 1 is characterized in that, this metal level is a sandwich construction.
7, the structure of improving improving contact resistance of organic LED integral color filter according to claim 6 is characterized in that, the material of inserting this contact well is that organic conductive material is replaced this metal level.
8, a kind of method of improving improving contact resistance of organic LED integral color filter is characterized in that, comprises the following steps:
(a) provide a substrate;
(b) on this substrate, form a polysilicon island;
(c) on this substrate, form an oxide layer, and this oxide layer covers this polysilicon island;
(d) form a gate metal layer on this oxide layer in centre position corresponding to this polysilicon island;
(e) on this oxide layer, form a dielectric layer, and this dielectric layer covers this gate metal layer;
(f) on this dielectric layer, offer several contact wells, make those contact wells run through this dielectric layer and this oxide layer and be communicated to the relevant position of this polysilicon island respectively;
(g) on this dielectric layer, form source electrode;
(h) on this source/drain metal layer, form a colored filter;
(i) on this colored filter, form a flatness layer;
(j) insert a metal level and be connected at the well that contacts that passes this flatness layer and this colored filter with this source/drain metal layer; And
(k) on this metal level and this flatness layer, form a pixel electrode layer.
9, the method for improving improving contact resistance of organic LED integral color filter according to claim 8, it is characterized in that, this flatness layer is organic material or inorganic material, this dielectric layer is organic material or inorganic material, this polysilicon island is substituted by other any semi-conducting material islands, and this substrate is plastics, glass, quartz or silicon wafer.
10, the method for improving improving contact resistance of organic LED integral color filter according to claim 8 is characterized in that, this metal level is a sandwich construction.
11, the method for improving improving contact resistance of organic LED integral color filter according to claim 10 is characterized in that, the material of inserting this contact well is that organic conductive material is replaced this metal level.
12, a kind of structure of improving improving contact resistance of organic LED integral color filter is characterized in that, this structure comprises:
One substrate;
One polysilicon island is formed on this substrate;
One oxide layer is formed on this substrate and covers this polysilicon island;
One gate metal layer is formed on this oxide layer corresponding to the centre position of this polysilicon island;
One colored filter is formed on this oxide layer and covers this gate metal layer;
One flatness layer is formed on this colored filter;
One metal level is inserted and is passed this flatness layer, this colored filter is connected with the relevant position of this polysilicon island with the contacting well of this oxide layer; And
One pixel electrode layer is formed on this metal level and this flatness layer.
13, the structure of improving improving contact resistance of organic LED integral color filter according to claim 12 is characterized in that, this flatness layer is organic material or inorganic material.
14, the structure of improving improving contact resistance of organic LED integral color filter according to claim 12 is characterized in that, this polysilicon island is substituted by other any semi-conducting material islands.
15, the structure of improving improving contact resistance of organic LED integral color filter according to claim 12 is characterized in that, this substrate is plastics, glass, quartz or Silicon Wafer.
16, the structure of improving improving contact resistance of organic LED integral color filter according to claim 12 is characterized in that, this metal level is a sandwich construction.
17, the structure of improving improving contact resistance of organic LED integral color filter according to claim 16 is characterized in that, the material of inserting this contact well is that organic conductive material is replaced this metal level.
18, a kind of method of improving improving contact resistance of organic LED integral color filter is characterized in that, comprises the following steps:
(a) provide a substrate;
(b) on this substrate, form a polysilicon island;
(c) on this substrate, form an oxide layer, and this oxide layer covers this polysilicon island;
(d) form a gate metal layer on this oxide layer in centre position corresponding to this polysilicon island;
(e) on this oxide layer, form a colored filter, and this colored filter covers this gate metal layer;
(f) on this colored filter, form a flatness layer;
(g) on this flatness layer, offer several contact wells, make those contact wells run through this flatness layer, this colored filter and this oxide layer and be communicated to the relevant position of this polysilicon island respectively;
(h) insert a metal level and be connected at those contact wells with the relevant position of this polysilicon island; And
(i) on this metal level and this flatness layer, form a pixel electrode layer.
19, the method for improving improving contact resistance of organic LED integral color filter according to claim 18, it is characterized in that, this flatness layer is organic material or inorganic material, this polysilicon island is substituted by other any semi-conducting material islands, and this substrate is plastics, glass, quartz or Silicon Wafer.
20, the method for improving improving contact resistance of organic LED integral color filter according to claim 18 is characterized in that, this metal level is a sandwich construction.
21, the method for improving improving contact resistance of organic LED integral color filter according to claim 20 is characterized in that, the material of inserting this contact well is that organic conductive material is replaced this metal level.
22, a kind of structure of improving improving contact resistance of organic LED integral color filter is characterized in that, comprising:
One substrate;
One polysilicon island is formed on this substrate;
One oxide layer is formed on this substrate and covers this polysilicon island;
One gate metal layer is formed on this oxide layer corresponding to the centre position of this polysilicon island;
One colored filter is formed on this oxide layer and covers this gate metal layer;
One metal level is inserted and is passed this colored filter and be connected with the relevant position of this polysilicon island with the contacting well of this oxide layer;
Source electrode is formed on this metal level and this colored filter;
One flatness layer is formed on this source/drain metal layer and covers this colored filter; And
One pixel electrode layer is formed on the contact well that passes this flatness layer and this flatness layer and is connected with the relevant position of this source/drain metal layer.
23, the structure of improving improving contact resistance of organic LED integral color filter according to claim 22 is characterized in that, this pixel electrode layer is replaced by following array structure:
One metal level is inserted the contact well that passes this flatness layer and is connected with this source/drain metal layer; And
One pixel electrode layer is formed on this metal level and this flatness layer.
24, the structure of improving improving contact resistance of organic LED integral color filter according to claim 22 is characterized in that, this flatness layer is organic material or inorganic material.
25, the structure of improving improving contact resistance of organic LED integral color filter according to claim 22 is characterized in that, this polysilicon island is substituted by other any semi-conducting material islands.
26, the structure of improving improving contact resistance of organic LED integral color filter according to claim 22 is characterized in that, this substrate is plastics, glass, quartz or silicon wafer.
27, according to claim 22 or the 23 described structures of improving improving contact resistance of organic LED integral color filter, it is characterized in that this metal level is a sandwich construction.
28, the structure of improving improving contact resistance of organic LED integral color filter according to claim 27 is characterized in that, the material of inserting this contact well is that organic conductive material is replaced this metal level.
29, a kind of method of improving improving contact resistance of organic LED integral color filter is characterized in that, comprises the following steps:
(a) provide a substrate;
(b) on this substrate, form a polysilicon island;
(c) on this substrate, form an oxide layer, and this oxide layer covers this polysilicon island;
(d) form a gate metal layer on this oxide layer in position corresponding to this polysilicon island;
(e) on this oxide layer, form a colored filter, and this colored filter covers this gate metal layer;
(f) on this colored filter, offer several contact wells, make those contact wells run through this colored filter and this oxide layer and be communicated to the relevant position of this polysilicon island respectively;
(g) insert a metal level and be connected at those contact wells with the relevant position of this polysilicon island;
(h) on this metal level and this colored filter, form source electrode;
(i) on this colored filter, form a flatness layer, and this flatness layer covers this source/drain metal layer; And
(j) on the contact well that passes this flatness layer and this flatness layer, form a pixel electrode layer and be connected with this source/drain metal layer.
30, the method for improving improving contact resistance of organic LED integral color filter according to claim 29 is characterized in that, this step (j) is replaced by the following step:
Insert a metal level and be connected at the contact well that passes this flatness layer with this source/drain metal layer; And
On this metal level and this flatness layer, form a pixel electrode layer.
31, the method for improving improving contact resistance of organic LED integral color filter according to claim 29, it is characterized in that, this flatness layer is organic material or inorganic material, this polysilicon island is substituted by other any semi-conducting material islands, and this substrate is plastics, glass, quartz or silicon wafer.
32, according to claim 29 or the 30 described methods of improving improving contact resistance of organic LED integral color filter, it is characterized in that this metal level is a sandwich construction.
33, the method for improving improving contact resistance of organic LED integral color filter according to claim 32 is characterized in that, the material of inserting this contact well is that organic conductive material is replaced this metal level.
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| CN103000662A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and display device |
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| CN103325732B (en) * | 2013-06-28 | 2016-03-30 | 京东方科技集团股份有限公司 | A kind of COA substrate and manufacture method, display unit |
| CN103700669A (en) | 2013-12-19 | 2014-04-02 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof as well as display device |
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