CN101010783A - 在低利用工艺中流量和压力梯度的去除 - Google Patents
在低利用工艺中流量和压力梯度的去除 Download PDFInfo
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- CN101010783A CN101010783A CNA2005800293552A CN200580029355A CN101010783A CN 101010783 A CN101010783 A CN 101010783A CN A2005800293552 A CNA2005800293552 A CN A2005800293552A CN 200580029355 A CN200580029355 A CN 200580029355A CN 101010783 A CN101010783 A CN 101010783A
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
本发明公开了在低物种利用工艺期间,通过停止气体流入反应腔室,可使扩散入衬底的原子数量均匀或者可使薄膜的厚度均匀。停止气体流入反应腔室可能需要关闭阀门(真空泵的阀门),稳定反应腔室内的压力,以及在停止气体流入腔室时维持稳定的压力。低物种利用工艺包括通过去耦等离子体氮化(DPN)使氮扩散到二氧化硅栅介电层中,通过快速热处理(RTP)或者化学气相沉积(CVD)沉积二氧化硅膜,以及通过CVD沉积硅外延层。
Description
背景技术
技术领域
本发明涉及半导体制造和处理领域,尤其涉及通过去耦等离子体氮化、快速热处理和化学气相沉积完成的低利用工艺(low utilization process)。
背景技术
低物种利用工艺包括通过去耦等离子体氮化(DPN)使氮扩散进入二氧化硅栅介电层中,通过快速热处理(RTP)或化学气相沉积(CVD)沉积二氧化硅膜,并通过CVD沉积硅外延层。在每一个低物种利用工艺中,在执行工艺的整个衬底上获得非常均匀的原子扩散或者薄膜都是有益的。这是因为随着器件尺寸进一步缩小,它们需要更薄的膜和更低浓度的原子扩散进入衬底。更薄的膜和更低浓度的原子扩散进入衬底进而需要整个衬底上膜厚度或扩散浓度的变化可忽略不计。
可以通过去耦等离子体氮化(DPN)腔室完成氮化物扩散到二氧化硅栅介电层。将氮气流入包含衬底的腔室,在该衬底上形成二氧化硅栅介电层,并且当氮气流持续流动的同时轰击等离子体。等离子体使氮电离,然后电离氮扩散入二氧化硅栅介电层。
可以在RTP腔室中通过快速热处理(RTP)完成二氧化硅薄膜的形成。将氢气(H2)和氧气(O2)气体流入到RTP腔室,并将硅衬底加热至氢气和氧气气体与硅衬底反应以形成二氧化硅层的温度。
可以在CVD腔室中通过化学气相工艺沉积(CVD)完成外延层的形成。将欲沉积的材料类型的前驱气体通常伴随载体或稀释气体流入腔室。当该气体流经腔室时,将腔室加热至前驱气体起反应以形成蒸汽并在衬底上形成薄膜的温度。
在每个工艺中,气体流经腔室,而腔室内的压力在腔室的不同部分不同。压力梯度可归因于进入腔室的气体的恒流,以及从腔室抽出气体的流量。这些流量和压力梯度可能是引起在整个衬底上扩散进入衬底的原子数量或在衬底上形成的薄膜的厚度不均匀的主要因素。
对反应腔室已进行了一些改进以减少由流量和压力梯度引起的不均匀。这些改进包括抽吸(pumping)平板、气体分配平板和喷头。设计抽吸平板以控制由流入或抽出腔室的气体的流量引起的流量和压力梯度。设计气体分配板以均匀分配整个腔室内的气体,以克服由流量和压力梯度引起的气体分配不均的问题。设计喷头是以特殊方式分配流入腔室的气体,以克服流量和压力梯度。
对反应腔室的这些改进可以帮助减少由供应给泵的气体流量引起的压力和流量梯度。但是,这些改进不能提供对于工艺的足够均匀性,尤其在反应物的消耗相对不重要的低利用工艺。
发明内容
根据本发明的一个方案,通过流入气体到反应腔室在反应腔室内执行低物种利用工艺,一旦腔室内的压力稳定就停止气体流入到反应腔室,并在停止气体流入腔室之后在腔室内执行低物种利用工艺。低物种利用工艺可以是耦合等离子体氮化、通过快速热处理沉积薄膜、或者通过化学气相沉积沉积薄膜。
根据本发明的另一方案,描述了设计用于无流量工艺的反应腔室。
附图说明
图1为根据本发明的实施方式的去耦等离子体氮化工艺流程图;
图2A为去耦等离子体氮化腔室的截面图;
图2B为去耦等离子体氮化腔室的内部和射频(RF)源的截面图;
图3为在去耦等离子体氮化工艺期间,氮扩散进入二氧化硅膜的截面图;
图4为根据本发明的实施方式在衬底上形成薄膜的快速热处理的流程图;
图5为快速热处理腔室的截面图;
图6为在反应气体的快速热处理期间在硅衬底上形成二氧化硅膜的截面图;
图7为根据本发明的实施方式的化学气相沉积薄膜的流程图;
图8为化学气相沉积腔室的截面图;
图9为通过化学气相沉积在硅衬底上形成硅外延层的截面图。
具体实施方式
在以下的说明书中,为了提供对本发明透彻的理解,陈述了多个具体细节。本领域任何一个普通技术人员应该可以理解这些具体细节仅是为了说明目的,而并非意欲限制本发明的范围。另外,在其它实施例中,以免使本发明不够清晰,没有对公知的处理技术和设备进行详细描述。
在低物种利用工艺期间,通过停止气体流入反应腔室,在低物种利用工艺中可以使扩散进入衬底的原子数量均匀。停止气体流入反应腔室可能需要关闭阀门(gate valve)(真空泵的阀),稳定反应腔室内的压力,并且当停止气体流入腔室时保持稳定的压力。同样,在低物种利用工艺期间,通过停止气体流入到反应腔室,在低物种利用工艺中可以使薄膜的厚度均匀。低物种利用工艺是通过仅利用反应腔室内的小部分反应物执行薄膜或注入或扩散的工艺。更尤其是,低物种利用工艺可是仅使用反应腔室内的反应物形成薄膜的工艺,或者扩散或注入到衬底表面的每平方厘米的原子的数量是在大约1×e14原子/cm2和1×c16原子/cm2的范围内。
在低物种利用工艺中,将气体流入腔室中直到在腔室中存在足够数量的反应物用于低物种利用工艺。然后,停止气体流入反应腔室。停止气体流入反应腔室可能需要关闭阀门(真空泵的阀门),同时通过第一次稳定压力稳定腔室内的压力,然后当停止气体流入反应腔室时维持压力。一旦腔室内的压力稳,就可以执行低物种利用工艺。通过关闭阀门并稳定执行低物种利用工艺的腔室内的压力,都可使扩散到衬底的原子数量的不均匀或者沉积到衬底上的薄膜厚度的不均匀最小或者消除。因为在处理期间在腔室内不再有压力或者流量梯度,所以不均匀性最小或者消除。这个“无流量”方法可以应用于二氧化硅栅介电薄膜或高介电常数(K)薄膜诸如HaFx的去耦等离子体氮化,并且可以应用于通过快速热处理、化学气相沉积以及原子层沉积形成薄膜。
在实施方式中,低物种利用工艺为去耦等离子氮化(DPN)工艺。在DPN工艺期间,氮扩散到衬底,诸如二氧化硅栅电介质。图1为描述根据本发明的DPN工艺的流程图。在方块101,诸如单晶硅片的衬底被设置在如图2中所示的IDPN腔室10内的衬底支架14上。在图3中示出了放置在DPN腔室中的衬底的截面图。在衬底插入到位于衬底支架14的上表面上的等离子体反应器10中之前,在衬底上形成外延硅层54。同样在衬底插入等离子体反应器10之前,在硅层54上生长薄二氧化硅层58。二氧化硅层58大约为数个埃(如,40埃)的厚度,并且随后用作最终制造的晶体管中的栅介电层。
在图2A中示出的DPN腔室10可对于不同直径的晶片或者衬底,例如,200mm晶片或者300mm晶片,进行不同设计。DPN腔室10包括下传送腔室26和传送机械装置28。上腔室12位于传送腔室26的顶部。传送腔室26的内体30通过腔室12底座中的圆形开口32与上腔室12的内体24相接。将衬底支架14保护在传送机械装置28的顶部,并且传送机械装置28可以用于提升或降低衬底支架14。
在使用中,操作传送机械装置28,使得衬底支架14降低到传送腔室26的内体30中。然后,通过传送腔室26的壁中打开的狭缝阀(slit-valve),将设置在附接到机械臂的叶片上的衬底传送到内体30。然后,操作传送机械装置28,以提升衬底支架14,使得衬底支架14接触衬底的下表面并从叶片提升衬底。然后,将叶片从传送腔室26移除,随后再次操作传送机械装置28,以将衬底支架14提升到开口32。位于衬底支架14上的衬底具有暴露于上腔室12的内体24的上表面。上腔室12主要包括导电体36和介电石英上壁38。导电体36形成腔室12的下部分,并且上壁38形成上腔室12的上部分。导电体36和上壁38共同限定内体24。
通过导体36在内体24内形成四个气体喷嘴口40。气体喷嘴口40围绕衬底支架14以90°间隔设置。在替代的实施方式中,DPN腔室10可设计为具有位于衬底支架14上方的气体喷嘴口。导体36同样限定在其任意一侧的真空泵管42。通过阀门气体喷嘴口40与气体歧管连接,并且真空泵管42与泵连接。当操作泵时,通过真空泵管42从内体24抽取气体,以减小内体24内的压力。可以操作阀门,以允许气体从歧管(未示出)通过阀门以及气体喷嘴口40进入到内体24。
更具体地参照图2B,上壁38是球面状,并且电极平板18具有与上壁38的外表面一致的球面状。事实上,电极平板18直接位于上壁38的正上方。电极平板18限定上壁38中心周围的圆形开口44。上壁38和电极平板18都关于重直轴46对称。线圈16围绕垂直轴46和开口44螺旋。线圈16位于电极平板18的球状上并与其一致。线圈16的一端与RF源50连接,并且线圈16的相反端接地52。
在另一实施方式中,DPN腔室可具有用于无流量工艺的修改。这些改进包括除去真空泵管,诸如42。真空泵管的目的是在处理期间调节从腔室流出的气体流量,以使引起氮扩散到衬底中的不均匀性的流量和压力梯度最小。因为在处理期间没有气体抽出腔室,所以可不再需要真空泵管。另外,因为在处理期间没有气体从腔室抽出,所以也就不再需要涡轮泵及其附带的涡轮层叠。可以使用比涡轮泵的抽取能力小的泵,因为在处理期间没有大量的气体需要抽出腔室。另外,涡轮层叠也是不必要的,该涡轮层叠平常附属于涡轮泵上以调节在处理期间流出腔室的气体流量,以使流量和压力梯度最小。另外,因为在处理期间不再存在压力和流量梯度问题,所以在任何位置反应气体都可能流入及流出腔室,并且简单开/关阀门可用于气体输入腔室以及气体从腔室输出。因为可使用简单开/关阀门,因此也不必需要复杂的气体歧管和物流控制器。可将这些修改用于任何一个使用“无流量”低物种利用工艺的工艺腔室,诸如快速热处理腔室、化学气相沉积腔室、以及原子层沉积腔室。
在方块102,一旦衬底位于DPN腔室10内,含氮气体流入DPN腔室10的内体24。含氮体可为纯氮气(N2)、氮气和氦气的混合物(N2/He)、氮气和氖气的混合物(N2/Ne)、或者氮气和氩气的混合物(N2/Ar)、或者N2O(纯气体或者与惰性气体混合)。由于N2O分解,使得引起多物种反应,因此通过“无流量”工艺可大大改善所用的氮化物与N2O的均匀性,与氮气混合的惰性气体的量,诸如氦气、氖气、或者氩气,可以达到大约气体混合物的95%,更尤其为在气体混合物的大约30%-90%的范围内。在停止气体流动之前,氮气到DPN腔室10内的流速可能在大约10sccm/秒-50sccm/秒的范围内。流入腔室内的氮气的量足以注入300mm硅片衬底中约1×1014原子/cm2-8×1014原子/cm2。腔室的整个内体可以具有大约70公升的体积,该腔室包括内腔室24和泵管42。根据是否存在泵管42,腔室的整个内体可能远小于70公升。泵管42可占有总内体的约三分之二。在方块103,将氮气流入腔室中直到内体24内的压力稳定时为止。稳定的压力是指在大约5秒内当压力为腔室内预期压力的大约0.1毫托时。在一个实施方式中,在关闭阀门(真空泵的阀-未示出)之后,通过以逐渐减慢的速率将气体流入到内体24直到内体24内的压力稳定,从而使内体24内的压力稳定。一旦通过减小的流速稳定压力后,在处理期间,压力控制器保持稳定的压力。在另一实施方式中,可以编程软件以控制DPN腔室10的整个内体的压力稳定的全部参数。在该实施方式中,通过与计算机可读介质耦合的系统控制器使气体流速逐渐降低,该计算机可读介质具有存储控制气体流速逐渐降低的指令集的存储器。气体流速逐渐降低到DPN腔室10内的预定压力,然后当停止气体流动时,耦合到系统控制器的计算机可读介质的存储器中存储的指令集稳定DPN腔室10内的压力。在内体24内的稳定压力可能是在大约0.1毫托-1000毫托的范围内,或者更尤其为在大约5毫托和95毫托的范围内,或者甚至更尤其为30毫托。
在方块104,在停止气体流入内体24后大约1秒至5秒,在方块105在内体24内轰击二氧化硅层58之上的氮离子(N+)22的等离子体。在图3中示出了在硅衬底之上形成的二氧化硅层58之上形成的氮离子(N+)的等离子体。通过图2b的RF源50轰击氮等离子体22。RF源可以产生大约13.56MHz的频率。RF线圈产生由整个上壁38上的电极平板18分布的RF场。圆形开口44允许RF场通过上壁38进入到内体24。RF可在10kMz的频率时脉冲。RF脉冲可在大约30W-300W的范围内处于有效的无线电频率功率值。有效功率是功率乘以占空比(duty cycle)。例如,在一个实施方式中,有效功率是大约150W,其中占空比为30%而全功率为500W。在这个实施方式中,RF每100毫秒脉冲调制33毫秒,因此导致大约150毫秒的有效功率。
RF场耦合氮气并激发少量的自由电子。然后自由电子撞击其它原子,以从氮原子释放更多的电子。该工艺持续进行直到达到稳态条件,其中氮等离子体22具有自由电子和自由离子的稳定量、稳定的电子温度、以及相对于地面的恒定电压。在图1的方块106,离子的储层(reservoir)是在内体24内,并且氮等离子体22的电势有助于离子从该储层扩散到二氧化硅层58。在整个工艺期间,衬底和衬底支架14的电势自由浮动,但是在方块106,氮等离子体22的电压和衬底支架14的电压存在差值,该电压差驱动氮离子扩散到二氧化硅层58。扩散发生在足以注入大约1×1014原子/cm2-8×1014原子/cm2到衬底中的时间内,而导致在二氧化硅层58内含大约4%-12%,更尤其为7%-8%的氮。因为二氧化硅膜的厚度可能是在大约6和16的范围内,氮可扩散至整个二氧化硅膜。可在大约2秒-120秒范围内的时间轰击等离子体,更尤其为在15秒-45秒的范围内,甚至更尤其为30秒。相较于在处理期间流量切断的工艺,在处理期间气体流动的工艺期间,扩散到二氧化硅层的氮原子的均匀性之间的差别可能是大约75%。
在从氮等离子体22扩散原子之后,关闭RF,清洗气体可流经DPN腔室20的内体24。然后,衬底可从腔室移除,并传送到快速热处理腔室退火,以增加二氧化硅层58中的氮保持。可在以大约700℃和1200℃的范围内的温度,将其上形成有氮扩散的二氧化硅层58的衬底退火处理5秒到120秒。
在另一实施方式中,低物种利用工艺是使用快速热处理(RTP)腔室,诸如图5中示出的腔室500,在衬底上形成薄膜的工艺。在一个特定的实施方式中,在RTP腔室500中使用低物种利用工艺,在硅衬底506上形成二氧化硅膜。硅衬底506设置在衬底支撑结构508上的RTP腔室500内部。图4为该实施方式中步骤的流程图。在方块401,反应气体520流入到图5示出的包含硅衬底506的快速热处理(RTP)腔室500中。硅衬底506可为单晶硅片或者在绝缘体上硅(SOI)晶片。可用于在硅衬底上形成二氧化硅膜的反应气体可是氧气(O2)和氢气(H2)的混合物或者仅有氧气(O2)。在使用氧气(O2)和氢气(H2)反应气体的混合物的实施方式中,氧气和氢气形成水分子。在该实施方式中,氢气(H2)的量可为大约1%-33%氢气(H2),更尤其为大约2%氢气(H2),并且混合物的平衡是氧气(O2)。在方块402,在室温下,反应气体流入到RTP腔室500内直到腔室内的压力稳定为止。稳定的压力可以是在5托和15托的范围内,更尤其为大约10托。在一个实施方式中,通过调整排气装置530的压力控制阀,在排气装置530利用真空泵(未示出)通过以越来越慢的速度流出RTP腔室500,直到RTP腔室500内的压力稳定,从而稳定RFT腔室500内的压力。一旦通过减小流速稳定压力,在处理期间,压力控制器保持稳定的压力。在另一实施方式中,可以编程软件来控制RTF腔室500的内体的压力稳定的全部参数。在该实施方式中,通过与计算机可读介质耦合的系统控制器逐渐降低气体流速,该计算机可读介质具有存储控制气体流速逐渐降低的指令集的存储器。气体流速逐渐降低到RTP腔室500内所达的预定压力,然后当气流停止时,在与系统控制器耦合的计算机可读介质中存储的指令集稳定RTP腔室500内的压力。在停止气流之前RTP腔室500内的温度为不足以引起反应气体或多种反应气体发生反应的温度。在使用氧气(O2)和氢气(H2)反应气体的混合物的实施方式中,在停止气流之前RTP腔室500内的温度为不足以由反应物形成水的温度。足以在H2和O2之间引起反应的温度大约为600℃。在一实施方式中,在停止气流之前RTP腔室500内的温度可为约室温。
在方块403,停止气体流入RTP腔室500。然后,衬底506逐渐升至到一特定温度,以引起反应气体的反应。在反应气体是H2和O2的一实施方式中,衬底可能逐渐升至大约600℃。可以通过位于衬底506正上方的加热元件510加热衬底。加热元件510可以由诸如钨卤灯的热灯组成。产生热辐射512用以加热衬底506。在另一实施方式中,可以通过含电阻加热元件的基座加热衬底506,或者通过诸如510的辐射加热元件和含电阻加热元件的基座加热衬底506。温度的上升速度可能大于50℃/秒,以及更尤其为大约在75℃/秒和100℃/秒的范围内。衬底上升至的温度可能高于800℃,以及更尤其为在800℃和1100℃的范围内。通过温度探针526和高温计528测量衬底506的温度。
在方块405,一旦达到目标温度,保持该温度恒定足够的时间,以形成目标厚度的二氧化硅膜520。可以通过降低温度至停止反应或通过耗尽腔室内的反应物达到该目标厚度。图6示出了通过氢气(H2)和氧气(O2)反应气体610在硅衬底506上形成二氧化硅膜620。在一个实施方式中,取决于欲用的膜,二氧化硅膜的厚度可为在大约5埃到100埃的范围内。在二氧化硅栅电介质形成的实施方式中,膜的厚度可小于约30埃,并且在一个特定的实施方式中为大约5埃的单层。在二氧化硅形成衬层(liner layer)或者牺牲氧化层的实施方式中,它可具有大约在50埃到100埃范围内的厚度。在二氧化硅形成绝缘区的实施方式中,膜可能具有在大约100埃到200埃范围内的厚度。可在大约15秒到300秒的范围内保持温度恒定。由于在腔室内所限定的反应物量,反应是自限性,并且保持温度恒定超过300秒可能导致仅微量生长。在处理期间,当在衬底506上形成二氧化硅膜620时,衬底可围绕衬底的中心轴以约90rmp到240rmp范围的旋转速度水平旋转。因为由于缺少气体流入以及流出腔室,在腔室内没有压力或这流量梯度,所以二氧化硅膜620可具有非常均匀的厚度。在具有“无流量”工艺的RTP腔室500中形成的二氧化硅膜620的厚度的均匀性可能大约比在处理期间有气体流入以及流出腔室的工艺形成的二氧化硅膜的厚度均匀性高10倍。例如,由在此描述的“无流量”工艺形成的大约20埃的二氧化硅膜在大约1000℃的温度可具有大约0.5或者更低的均匀度(厚度的变化)。
然后,冷却RTP腔室500内的温度至大约室温。一旦冷却下来,通过打开在排气装置530处的压力控制阀,排空RTP腔室500内的反应气体。然后,诸如氮气的清洗气体在开口540处流入RTP腔室500。现在,可使RTP腔室500置于传送压力,在传送压力下可将衬底506用集成设备传送到传送腔室,并放置在另一腔室中用于进一步的处理。
在另一实施方式中,可通过这个工艺在硅晶片上形成氮化硅(Si3N4)膜。氮化硅膜可以用于形成薄膜电容器,并可具有小于大约30埃的厚度。氮化硅膜可以在RTP腔室500中由氨(NH3)气在足以引起氨气反应的高于700℃的温度形成,更尤其为900℃以上。在腔室内形成氮化硅膜的压力可高于大约400托。氮化硅膜的厚度可在大约10到25的范围内。可在30秒到2分钟范围内的时间生长氮化硅膜。通过降低RTP腔室500内的温度可减缓或停止反应气体的反应。
在又一实施方式中,通过这个工艺可在硅晶片上形成氧氮化物膜。使用N2O气体生长氧氮化物层对压力和流量梯度比较敏感,并且可获益于“无流量”工艺。可使用诸如N2O或NO的反应气体形成氧氮化物膜。在高于700℃的温度,而更尤其是高于800℃的温度下,在大约10托和700托的范围内的压力下,这些气体反应形成氧氮化物膜。氧氮化物膜可具有大约10到50范围内的厚度。可在30秒到2分钟的时间范围内生长氧氮化物膜。通过降低RTP腔室500内的温度可减缓或停止反应气体的反应。
在另一实施方式中,低物种利用工艺可以是在CVD腔室800中通过化学气相沉积(CVD)形成薄膜。图7是通过CVD在衬底810上形成膜的工艺流程图。CVD腔室800可以是在图8中示出的热低压CVD(LPCVD)设备。衬底810可以是硅晶片,或者在绝缘衬底上的另一类型的半导体或硅。运用传送叶片841通过入口840将衬底810放置在CVD腔室800的内部890。传送叶片841将衬底810放置到升降组件(lifter assembly)865的升降杆(lifter pins)895上。然后,将传送叶片841从腔室800移除,并且升降组件向上运动,以将基座805带到与衬底810接触。基座805包含如在基座805的截面部分示出的电阻加热元件880。在处理期间,电阻加热元件880将加热基座805和衬底810。在另一实施方式中,基座805可不包含电阻加热元件880,并且可由位于腔室800内基座805上方和下方的热灯加热晶片810和基座805。在方块701,反应气体流入包含衬底810的CVD腔室800的内部890。反应气体通过歧管(未示出)、分配端820、区隔板824和喷头825流入内体890。在另一实施方式中,不存在歧管和喷头825,而仅使用简单的分配端820将反应气体流入内部890。通常,当保持气体流入内部890的量时,歧管和喷头用于在处理期间均匀分配特定量的反应气体到内部890。因为在处理期间,没有反应气体流入内部890,所以不需要歧管和喷头。反应气体流入CVD腔室800的内部890,直到在腔室内存在足够量的反应气体用于低物种利用工艺。
在一个实施方式中,低物种利用工艺是由CVD形成薄膜。薄膜可为硅膜,诸如在硅衬底上形成的单晶外延层、多晶硅层、或者非晶硅层。图9示出了另一实施方式,其中硅外延层910在硅衬底810之上形成。为了在硅衬底810上形成任一种硅膜,反应气体可为含硅的气体,诸如甲烷(SiH4)或者二氯甲硅烷(SiH2Cl2),并伴随有载气,诸如氢气(H2)。在与含硅气体的混合物中氢气的量可为在大约90%和98%的范围内。反应气体流入CVD腔室800,直到存在足以形成特定厚度的外延硅膜910的反应气体量。单晶外延膜910的厚度可为在大约20埃和500埃的范围内,更尤其是大约100埃。在方块702,直到CVD腔室800内的压力稳定才停止反应气体流入内部890。CVD腔室800内的稳定的压力可为大约在10托-700托的范围内,更尤其是大约100托。在一个实施方式中,通过调整压力控制阀,以逐渐减慢的速度通过真空泵从CVD腔室800流出方式稳定CVD腔室800内的压力,直到稳定CVD腔室800的内部890内的压力。一旦通过减小流速稳定压力,在处理期间,压力控制器保持稳定的压力。在另一实施方式中,可编程软件以控制CVD腔室800的内体的压力稳定的所有参数。在该实施方式中,通过耦合到计算机可读介质的系统控制器逐渐降低气体流速,该计算机可读介质具有存储控制气体流速降低的指令集的存储器。气体流速降到CVD腔室800内达到预定压力,然后当气体流动停止时,在耦合到系统控制器的计算机可读介质的存储器中存储的指令集稳定CVD腔室800内的压力。在停止气体流动之前CVD腔室800内的温度不足以引起反应气体或多种气体反应。在一个实施方式中,在停止气体流动之前,CVD腔室800的内部890内的温度可大约为室温。
在方块703,停止反应气体流入CVD腔室800的内部890。然后,衬底810的温度升至足以引起反应气体或多种气体反应并在衬底810上形成薄外延膜910的温度。通过基座805加热衬底810,基座805由基座805内的电阻加热元件880加热。温度的上升速度可大约为在25℃/秒-75℃/秒的范围内,更尤其是大约为50℃/秒。晶片升至的温度可为在大约400℃-900℃范围内,更尤其是在大约600℃-800℃的范围内。通过在硅层生长的稳定温度可控制所形成的硅层的类型。一般而言,在较低温度下,可形成非晶硅,然后随着温度升高,所形成的硅的类型可由无定形到多晶硅,再到单晶硅。一旦衬底810的温度升至反应温度,稳定衬底810的温度足以生成所需厚度的外延硅膜910的时间。在反应温度,反应气体在热衬底的表面上分解,然后所分解的反应物在衬底上生成外延硅膜910。单晶外延膜910的厚度可为在大约20埃和500埃的范围内,更尤其为100埃。在热灯用于加热衬底和基座的实施方式中,当在衬底上生长外延硅膜910时,衬底以大约20rmp和50rmp范围内的旋转速度围绕衬底的中心轴水平旋转。通过使用在此描述的“无流量”工艺,可改善单晶外延膜910的厚度均匀性。因为在单晶外延膜910的生长期间,没有反应气体流入和流出CVD腔室800而引起流动和压力梯度,所以改善了膜910的厚度均匀性。
然后,为了冷却衬底810,基座805和CVD腔室800内的温度冷却至室温。然后,一旦冷却,通过打开位于气体输出830的压力控制阀(未示出),可排空CVD腔室800的反应气体。然后,诸如氢气(H2)和氮气(N2)的清洗气体可流入CVD腔室800的内部890。现在,可将CVD腔室800引到传送压力,在该传送压力,衬底810可传送到集成设备中的传送腔室,并放置到另一腔室中用于进一步处理。
在另一实施方式中,由“无流量”低物种利用工艺通过CVD形成的薄膜可以是二氧化硅,或者氮化硅。用于生长诸如二氧化硅和氮化硅的其它无定形膜的参数可类似于形成外延硅膜的参数。主要区别在于,除主要的硅前驱体诸如SiH4、Si2H6,或Si2H2Cl2之外可引入诸如氧气或氨气的其它气体。温度和压力与用于生长外延硅的可略有差别。
在此描述的“无流量”低物种利用实施方式是本发明应用的一些实施例。在处理期间,停止气体流入反应腔室的观念可以延伸到诸如原子层沉积或掺杂注入的其它低物种利用工艺。应该理解所公开的特定的实施方式仅意在描述本发明,并且本领域的普通技术人员将可以理解对于上述公开的方法和装置的替代物或修改。这样,本发明的权利要求范围应以以下所附的权利要求书为准。
Claims (45)
1、一种方法,包括:
流入气体到腔室中;
停止气体流入所述腔室中;以及
在使所述腔室内的压力和流量梯度最小之后,在所述腔室内执行低物种利用工艺。
2、根据权利要求1所述的方法,其特征在于,停止所述气体流入所述腔室包含稳定所述腔室内的所述压力,关闭所述腔室的阀门,以及当停止气体流入所述腔室时维持所述腔室内的所述压力。
3、根据权利要求1所述的方法,其特征在于,执行所述低物种利用工艺包括沉积小于30埃厚度的薄膜。
4、根据权利要求1所述的方法,其特征在于,执行所述低物种利用工艺包括将原子扩散至衬底中大约1×e14原子/cm2和1×e16原子/cm2的范围内。
5、根据权利要求1所述的方法,其特征在于,执行所述低物种利用工艺包括去耦等离子体氮化。
6、根据权利要求1所述的方法,其特征在于,执行所述低物种利用工艺包括沉积薄膜的快速热处理。
7、根据权利要求1所述的方法,其特征在于,执行所述低物种利用工艺包括化学气相沉积。
8、根据权利要求7所述的方法,其特征在于,所述化学气相沉积包含在衬底上生长外延层。
9、根据权利要求1所述的方法,其特征在于,执行所述低物种利用工艺包括原子层沉积。
10、一种方法,包括:
流入气体到等离子体腔室;
停止所述气体流入到所述等离子体腔室内;以及
在停止所述气体流入到所述等离子体腔室之后轰击等离子体。
11、根据权利要求10所述的方法,其特征在于,还包括在轰击所述等离子体之前稳定所述等离子体腔室内的压力。
12、根据权利要求10所述的方法,其特征在于,当轰击所述等离子体时,在所述等离子体腔室内维持稳定的压力。
13、根据权利要求10所述的方法,其特征在于,当轰击所述等离子体时,还包括扩散所述气体到衬底中。
14、根据权利要求13所述的方法,其特征在于,扩散气体到衬底包括扩散氮气体到二氧化硅栅中。
15、一种方法,包括:
流入氮气到去耦等离子体氮化腔室,所述去耦等离子体氮化腔室具有内压;
关闭所述去耦等离子体氮化腔室的所述阀门;
稳定所述去耦等离子体氮化腔室的所述内压,以获得稳定的压力;
当停止所述气体流入到所述去耦等离子体氮化腔室时,维持所述去耦等离子体氮化腔室内的所述稳定压力;以及
在停止所述氮化气体流入到所述腔室后及稳定所述腔室的所述内压之后,轰击等离子体。
16、根据权利要求15所述的方法,其特征在于,轰击等离子体包括将氮注入到300mm晶片上的二氧化硅膜中大约1×e14原子/cm2和8×e14原子/cm2的范围内。
17、根据权利要求15所述的方法,其特征在于,轰击等离子体包括在所述等离子体氮化腔室的顶周围提供线圈,并以射频源激发所述线圈。
18、根据权利要求15所述的方法,其特征在于,稳定所述去耦等离子体氮化腔室的所述内压包括使所述内压到在大约5毫托和95毫托内。
19、根据权利要求15所述的方法,其特征在于,稳定所述去耦等离子体氮化腔室的所述内压包括使所述内压为大约20毫托。
20、根据权利要求15所述的方法,其特征在于,还包括当轰击等离子体时,维持所述稳定的内压。
21、根据权利要求15所述的方法,其特征在于,维持所述去耦等离子体氮化腔室的所述稳定的压力包括以在大约10sccm/秒和50sccm/秒的范围内的速率逐渐降低所述气体流量。
22、根据权利要求15所述的方法,其特征在于,注入氮到衬底中包括在大约30W到300W的范围内施加有效的射频。
23、根据权利要求15所述的方法,其特征在于,注入氮到衬底包括施加大约150W的有效射频。
24、一种方法,包括:
流入反应气体到包含衬底的快速热处理腔室;
在不足以引起所述反应气体反应的第一温度,停止所述气体流入所述快速热处理腔室;以及
在停止所述气体流入到所述快速热处理腔室后,逐渐上升所述第一温度至第二温度,所述第二温度足以引起所述反应气体的反应;以及
在所述第二温度,在所述衬底上形成薄膜。
25、根据权利要求24所述的方法,其特征在于,流入反应气体到所述腔室包括流入氢气(H2)和氧气(O2)的混合物到所述腔室。
26、根据权利要求24所述的方法,其特征在于,流入反应气体到所述腔室包括流入氧气到所述腔室。
27、根据权利要求24所述的方法,其特征在于,流入反应气体到快速热处理腔室包括流入反应气体的量足以生成在大约5埃和50埃范围内厚度的薄膜。
28、根据权利要求24所述的方法,其特征在于,还包括在不足以引起所述反应气体反应的第一温度停止所述气体流入所述快速热处理腔室之前,稳定所述快速热处理腔室内的内压。
29、根据权利要求24所述的方法,其特征在于,在所述晶片上形成所述薄膜包括沉积二氧化硅膜。
30、根据权利要求24所述的方法,其特征在于,所述第二温度包括在大约800℃和1100℃的范围内的温度。
31、一种方法,包括:
流入反应气体到包含衬底的化学气相沉积腔室;
在不足以引起所述反应气体反应的第一温度,停止所述气体流入所述化学气相沉积腔室;
在停止所述气体流入化学气相沉积腔室之后,逐渐升高所述第一温度至第二温度,所述第二温度足以引起所述反应气体的反应;以及
在所述第二温度,在所述衬底上形成薄膜。
32、根据权利要求31所述的方法,其特征在于,流入反应气体到化学气相沉积腔室包括流入含硅气体、氢气和标记的混合物到所述化学气相沉积腔室。
33、根据权利要求31所述的方法,其特征在于,流入反应气体到化学气相沉积腔室包括流入反应气体的量足以生成具有在大约5埃和500埃范围内厚度的薄膜。
34、根据权利要求31所述的方法,其特征在于,流入反应气体到化学气相沉积腔室包括流入反应气体的量足以生成具有大约100埃厚度的薄膜。
35、根据权利要求31所述的方法,其特征在于,还包括在停止所述气体流入所述化学气相沉积腔室之前,在不足以引起所述反应气体反应的第一温度,稳定所述化学气相沉积腔室内的内压。
36、根据权利要求31所述的方法,其特征在于,在所述衬底上形成所述薄膜包括在硅晶片上生成外延硅层。
37、根据权利要求31所述的方法,其特征在于,在所述衬底上形成所述薄膜包括在硅晶片上生成外延多晶硅层。
38、根据权利要求31所述的方法,其特征在于,在所述衬底上形成所述薄膜包括在硅晶片上生成非晶硅层。
39、根据权利要求31所述的方法,其特征在于,在所述衬底上形成所述薄膜包括在所述晶片上生成二氧化硅层。
40、根据权利要求31所述的方法,其特征在于,在所述衬底上形成所述薄膜包括在所述晶片上生成氮化硅层。
41、一种衬底处理系统,包括:
工艺腔室;
用于控制所述工艺腔室的系统控制器;
耦合到所述控制器的计算机可读介质,所述计算机可读介质具有一存储器,所述存储器存储控制所述工艺腔室的压力稳定性的操作的指令集;以及
其中,通过逐渐降低气体流入所述工艺腔室的气体流速,在关闭所述工艺腔室的阀门之前稳定所述工艺腔室内的压力,以及当停止所述气体流入所述工艺腔室时保持所述工艺腔室内的所述压力,所述指令集控制所述工艺腔室内的所述压力稳定性的所有参数。
42、根据权利要求41所述的衬底处理系统,其特征在于,所述工艺腔室是去耦等离子体氮化腔室。
43、根据权利要求41所述的衬底处理系统,其特征在于,所述工艺腔室是快速热处理腔室。
44、根据权利要求41所述的衬底处理系统,其特征在于,所述工艺腔室是化学气相沉积腔室。
45、根据权利要求41所述的衬底处理系统,其特征在于,在停止所述气体流入所述工艺腔室后,通过执行低物种利用工艺,所述指令集还控制所述工艺腔室内的所述压力稳定性的所有参数。
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CN104011839A (zh) * | 2011-12-20 | 2014-08-27 | 株式会社日立国际电气 | 衬底处理装置、半导体器件的制造方法及气化装置 |
CN104011839B (zh) * | 2011-12-20 | 2017-02-22 | 株式会社日立国际电气 | 衬底处理装置、半导体器件的制造方法及气化装置 |
CN104395498A (zh) * | 2012-06-20 | 2015-03-04 | 应用材料公司 | 使用快速热处理的原子层沉积 |
CN105568256A (zh) * | 2016-02-24 | 2016-05-11 | 北京七星华创电子股份有限公司 | 原子层沉积技术制备薄膜的实现方法 |
CN108286044A (zh) * | 2017-01-10 | 2018-07-17 | Asm Ip控股有限公司 | 用于减少膜沉积过程期间的残余物堆积的反应器系统和方法 |
CN108286044B (zh) * | 2017-01-10 | 2022-09-20 | Asm Ip控股有限公司 | 用于减少膜沉积过程期间的残余物堆积的反应器系统和方法 |
CN111540673A (zh) * | 2020-07-07 | 2020-08-14 | 中芯集成电路制造(绍兴)有限公司 | 半导体器件的形成方法 |
CN112420731A (zh) * | 2020-11-17 | 2021-02-26 | 长江存储科技有限责任公司 | 在深孔中形成薄膜层的方法及半导体器件的制备方法 |
CN112420731B (zh) * | 2020-11-17 | 2021-12-17 | 长江存储科技有限责任公司 | 在深孔中形成薄膜层的方法及半导体器件的制备方法 |
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US20060029747A1 (en) | 2006-02-09 |
KR20070042190A (ko) | 2007-04-20 |
US7955646B2 (en) | 2011-06-07 |
JP5042022B2 (ja) | 2012-10-03 |
WO2006020513A1 (en) | 2006-02-23 |
JP2008509573A (ja) | 2008-03-27 |
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