CN101069281A - 在cmos技术中形成自对准双重硅化物的方法 - Google Patents
在cmos技术中形成自对准双重硅化物的方法 Download PDFInfo
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- CN101069281A CN101069281A CNA2005800413925A CN200580041392A CN101069281A CN 101069281 A CN101069281 A CN 101069281A CN A2005800413925 A CNA2005800413925 A CN A2005800413925A CN 200580041392 A CN200580041392 A CN 200580041392A CN 101069281 A CN101069281 A CN 101069281A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
Abstract
Description
Claims (32)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/904,884 | 2004-12-02 | ||
US10/904,884 US7064025B1 (en) | 2004-12-02 | 2004-12-02 | Method for forming self-aligned dual salicide in CMOS technologies |
PCT/US2005/043474 WO2006060575A2 (en) | 2004-12-02 | 2005-12-01 | Method for forming self-aligned dual salicide in cmos technologies |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101069281A true CN101069281A (zh) | 2007-11-07 |
CN101069281B CN101069281B (zh) | 2012-05-30 |
Family
ID=36565727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800413925A Expired - Fee Related CN101069281B (zh) | 2004-12-02 | 2005-12-01 | 在cmos技术中形成自对准双重硅化物的方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7064025B1 (zh) |
EP (1) | EP1825508A4 (zh) |
JP (1) | JP5102628B2 (zh) |
KR (1) | KR101055708B1 (zh) |
CN (1) | CN101069281B (zh) |
TW (1) | TWI371084B (zh) |
WO (1) | WO2006060575A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102105978A (zh) * | 2008-06-20 | 2011-06-22 | 日本优尼山帝斯电子株式会社 | 半导体存储器件 |
CN103456691A (zh) * | 2012-05-29 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Cmos的制造方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7229909B2 (en) * | 2004-12-09 | 2007-06-12 | International Business Machines Corporation | Integrated circuit chip utilizing dielectric layer having oriented cylindrical voids formed from carbon nanotubes |
US7446062B2 (en) * | 2004-12-10 | 2008-11-04 | International Business Machines Corporation | Device having dual etch stop liner and reformed silicide layer and related methods |
JP2009516910A (ja) * | 2005-11-21 | 2009-04-23 | フリースケール セミコンダクター インコーポレイテッド | サリサイド層を有する半導体装置を形成する方法 |
US20070123042A1 (en) * | 2005-11-28 | 2007-05-31 | International Business Machines Corporation | Methods to form heterogeneous silicides/germanides in cmos technology |
US7544575B2 (en) * | 2006-01-19 | 2009-06-09 | Freescale Semiconductor, Inc. | Dual metal silicide scheme using a dual spacer process |
US20070178683A1 (en) * | 2006-02-02 | 2007-08-02 | Texas Instruments, Incorporated | Semiconductive device fabricated using a two step approach to silicide a gate and source/drains |
DE102006015090B4 (de) * | 2006-03-31 | 2008-03-13 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung unterschiedlicher eingebetteter Verformungsschichten in Transistoren |
JP2008112857A (ja) * | 2006-10-30 | 2008-05-15 | Nec Electronics Corp | 半導体集積回路装置 |
US7750426B2 (en) * | 2007-05-30 | 2010-07-06 | Intersil Americas, Inc. | Junction barrier Schottky diode with dual silicides |
US7569446B2 (en) * | 2007-06-12 | 2009-08-04 | International Business Machines Corporation | Semiconductor structure and method of manufacture |
KR101406226B1 (ko) * | 2008-05-07 | 2014-06-13 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US20100019327A1 (en) * | 2008-07-22 | 2010-01-28 | Eun Jong Shin | Semiconductor Device and Method of Fabricating the Same |
US8021971B2 (en) * | 2009-11-04 | 2011-09-20 | International Business Machines Corporation | Structure and method to form a thermally stable silicide in narrow dimension gate stacks |
KR20140101218A (ko) | 2013-02-08 | 2014-08-19 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR20140108960A (ko) | 2013-03-04 | 2014-09-15 | 삼성전자주식회사 | 듀얼 금속 실리사이드층을 갖는 반도체 장치의 제조 방법 |
US8999799B2 (en) | 2013-08-29 | 2015-04-07 | International Business Machines Corporation | Maskless dual silicide contact formation |
FR3016235B1 (fr) * | 2014-01-08 | 2016-01-22 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif microelectronique |
US10546856B2 (en) | 2014-02-25 | 2020-01-28 | Stmicroelectronics, Inc. | CMOS structure having low resistance contacts and fabrication method |
US9390981B1 (en) | 2015-02-05 | 2016-07-12 | Globalfoundries Inc. | Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides |
US9564372B2 (en) | 2015-06-16 | 2017-02-07 | International Business Machines Corporation | Dual liner silicide |
US9805973B2 (en) | 2015-10-30 | 2017-10-31 | International Business Machines Corporation | Dual silicide liner flow for enabling low contact resistance |
WO2020191068A1 (en) * | 2019-03-20 | 2020-09-24 | Tokyo Electron Limited | Method of selectively forming metal silicides for semiconductor devices |
TWI696270B (zh) * | 2019-04-15 | 2020-06-11 | 力晶積成電子製造股份有限公司 | 記憶體結構及其製造方法 |
US20230187282A1 (en) * | 2021-12-15 | 2023-06-15 | Applied Materials, Inc. | Dual silicide process using ruthenium silicide |
Family Cites Families (30)
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US4599789A (en) * | 1984-06-15 | 1986-07-15 | Harris Corporation | Process of making twin well VLSI CMOS |
JPH04349660A (ja) * | 1991-05-28 | 1992-12-04 | Toshiba Corp | 半導体装置及び製造方法 |
US5635426A (en) * | 1993-08-26 | 1997-06-03 | Fujitsu Limited | Method of making a semiconductor device having a silicide local interconnect |
US5710450A (en) * | 1994-12-23 | 1998-01-20 | Intel Corporation | Transistor with ultra shallow tip and method of fabrication |
US5770490A (en) * | 1996-08-29 | 1998-06-23 | International Business Machines Corporation | Method for producing dual work function CMOS device |
US5824578A (en) * | 1996-12-12 | 1998-10-20 | Mosel Vitelic Inc. | Method of making a CMOS transistor using liquid phase deposition |
US5989950A (en) * | 1998-01-26 | 1999-11-23 | Texas Instruments - Acer Incorporated | Reduced mask CMOS salicided process |
US6100173A (en) * | 1998-07-15 | 2000-08-08 | Advanced Micro Devices, Inc. | Forming a self-aligned silicide gate conductor to a greater thickness than junction silicide structures using a dual-salicidation process |
JP2000286411A (ja) * | 1999-03-29 | 2000-10-13 | Toshiba Corp | 半導体装置とその製造方法 |
US6277683B1 (en) * | 2000-02-28 | 2001-08-21 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a sidewall spacer and a salicide blocking shape, using only one silicon nitride layer |
US6562718B1 (en) * | 2000-12-06 | 2003-05-13 | Advanced Micro Devices, Inc. | Process for forming fully silicided gates |
JP3614782B2 (ja) * | 2001-01-19 | 2005-01-26 | シャープ株式会社 | 半導体装置の製造方法及びその方法により製造される半導体装置 |
JP2002231908A (ja) * | 2001-02-06 | 2002-08-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6524939B2 (en) * | 2001-02-23 | 2003-02-25 | Vanguard International Semiconductor Corporation | Dual salicidation process |
US6528402B2 (en) * | 2001-02-23 | 2003-03-04 | Vanguard International Semiconductor Corporation | Dual salicidation process |
US6534405B1 (en) * | 2001-10-01 | 2003-03-18 | Taiwan Semiconductor Manufacturing Company | Method of forming a MOSFET device featuring a dual salicide process |
JP2005519468A (ja) * | 2002-02-28 | 2005-06-30 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 半導体デバイス中の異なるシリコン含有領域上に、異なるシリサイド部分を形成する方法 |
DE10208728B4 (de) * | 2002-02-28 | 2009-05-07 | Advanced Micro Devices, Inc., Sunnyvale | Ein Verfahren zur Herstellung eines Halbleiterelements mit unterschiedlichen Metallsilizidbereichen |
DE10209059B4 (de) * | 2002-03-01 | 2007-04-05 | Advanced Micro Devices, Inc., Sunnyvale | Ein Halbleiterelement mit unterschiedlichen Metall-Halbleiterbereichen, die auf einem Halbleitergebiet gebildet sind, und Verfahren zur Herstellung des Halbleiterelements |
US6787464B1 (en) * | 2002-07-02 | 2004-09-07 | Advanced Micro Devices, Inc. | Method of forming silicide layers over a plurality of semiconductor devices |
KR100460268B1 (ko) * | 2002-07-16 | 2004-12-08 | 매그나칩 반도체 유한회사 | 비대칭 실리사이드막을 갖는 sram의 구조 및 그 제조방법 |
US6894353B2 (en) * | 2002-07-31 | 2005-05-17 | Freescale Semiconductor, Inc. | Capped dual metal gate transistors for CMOS process and method for making the same |
US6589836B1 (en) * | 2002-10-03 | 2003-07-08 | Taiwan Semiconductor Manufacturing Company | One step dual salicide formation for ultra shallow junction applications |
JP3921437B2 (ja) * | 2002-10-17 | 2007-05-30 | 富士通株式会社 | 半導体装置の製造方法 |
JP4197607B2 (ja) * | 2002-11-06 | 2008-12-17 | 株式会社東芝 | 絶縁ゲート型電界効果トランジスタを含む半導体装置の製造方法 |
US6846734B2 (en) * | 2002-11-20 | 2005-01-25 | International Business Machines Corporation | Method and process to make multiple-threshold metal gates CMOS technology |
JP4209206B2 (ja) * | 2003-01-14 | 2009-01-14 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6891192B2 (en) * | 2003-08-04 | 2005-05-10 | International Business Machines Corporation | Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions |
US6905922B2 (en) * | 2003-10-03 | 2005-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual fully-silicided gate MOSFETs |
US6982196B2 (en) * | 2003-11-04 | 2006-01-03 | International Business Machines Corporation | Oxidation method for altering a film structure and CMOS transistor structure formed therewith |
-
2004
- 2004-12-02 US US10/904,884 patent/US7064025B1/en active Active
-
2005
- 2005-10-20 US US11/254,934 patent/US7067368B1/en active Active
- 2005-10-20 US US11/254,929 patent/US7112481B2/en not_active Expired - Fee Related
- 2005-11-28 TW TW094141765A patent/TWI371084B/zh not_active IP Right Cessation
- 2005-12-01 EP EP05852638A patent/EP1825508A4/en not_active Withdrawn
- 2005-12-01 KR KR1020077012730A patent/KR101055708B1/ko not_active IP Right Cessation
- 2005-12-01 WO PCT/US2005/043474 patent/WO2006060575A2/en active Application Filing
- 2005-12-01 JP JP2007544510A patent/JP5102628B2/ja not_active Expired - Fee Related
- 2005-12-01 CN CN2005800413925A patent/CN101069281B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102105978A (zh) * | 2008-06-20 | 2011-06-22 | 日本优尼山帝斯电子株式会社 | 半导体存储器件 |
CN102105978B (zh) * | 2008-06-20 | 2013-04-10 | 新加坡优尼山帝斯电子私人有限公司 | 半导体存储器件 |
CN103456691A (zh) * | 2012-05-29 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Cmos的制造方法 |
CN103456691B (zh) * | 2012-05-29 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Cmos的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7064025B1 (en) | 2006-06-20 |
TWI371084B (en) | 2012-08-21 |
JP5102628B2 (ja) | 2012-12-19 |
KR20070085805A (ko) | 2007-08-27 |
US20060121662A1 (en) | 2006-06-08 |
US20060121665A1 (en) | 2006-06-08 |
KR101055708B1 (ko) | 2011-08-11 |
EP1825508A2 (en) | 2007-08-29 |
EP1825508A4 (en) | 2009-06-24 |
WO2006060575A2 (en) | 2006-06-08 |
US20060121664A1 (en) | 2006-06-08 |
US7067368B1 (en) | 2006-06-27 |
CN101069281B (zh) | 2012-05-30 |
WO2006060575A3 (en) | 2007-04-26 |
TW200625540A (en) | 2006-07-16 |
JP2008522444A (ja) | 2008-06-26 |
US7112481B2 (en) | 2006-09-26 |
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Effective date of registration: 20170109 Address after: American New York Patentee after: Globalfoundries second U.S. Semiconductor Co.,Ltd. Address before: American New York Patentee before: International Business Machines Corp. Effective date of registration: 20170109 Address after: The Cayman Islands (British) Grand Cayman Patentee after: INTERNATIONAL BUSINESS MACHINES Corp. Address before: American New York Patentee before: Globalfoundries second U.S. Semiconductor Co.,Ltd. |
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Effective date of registration: 20180328 Address after: Ontario, Canada Patentee after: International Business Machines Corp. Address before: The Cayman Islands (British) Grand Cayman Patentee before: INTERNATIONAL BUSINESS MACHINES Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20120530 Termination date: 20211201 |