CN101084556A - 具有改良检测的非易失性存储器及其方法 - Google Patents
具有改良检测的非易失性存储器及其方法 Download PDFInfo
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- CN101084556A CN101084556A CNA038248646A CN03824864A CN101084556A CN 101084556 A CN101084556 A CN 101084556A CN A038248646 A CNA038248646 A CN A038248646A CN 03824864 A CN03824864 A CN 03824864A CN 101084556 A CN101084556 A CN 101084556A
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
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- G11C2207/06—Sense amplifier related aspects
- G11C2207/065—Sense amplifier drivers
Abstract
Description
Claims (31)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/254,830 US7196931B2 (en) | 2002-09-24 | 2002-09-24 | Non-volatile memory and method with reduced source line bias errors |
US10/254,830 | 2002-09-24 | ||
US10/665,828 US7023736B2 (en) | 2002-09-24 | 2003-09-17 | Non-volatile memory and method with improved sensing |
US10/665,828 | 2003-09-17 | ||
PCT/US2003/029603 WO2004029984A2 (en) | 2002-09-24 | 2003-09-23 | Non-volatile memory and its sensing method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910137272.5A Division CN101615428B (zh) | 2002-09-24 | 2003-09-23 | 非易失性存储器及控制非易失性存储器中的复数个检测电路的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101084556A true CN101084556A (zh) | 2007-12-05 |
CN101084556B CN101084556B (zh) | 2010-05-05 |
Family
ID=31993403
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910137272.5A Expired - Fee Related CN101615428B (zh) | 2002-09-24 | 2003-09-23 | 非易失性存储器及控制非易失性存储器中的复数个检测电路的方法 |
CN038248646A Expired - Fee Related CN101084556B (zh) | 2002-09-24 | 2003-09-23 | 非易失性存储装置中的检测方法及读取系统 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910137272.5A Expired - Fee Related CN101615428B (zh) | 2002-09-24 | 2003-09-23 | 非易失性存储器及控制非易失性存储器中的复数个检测电路的方法 |
Country Status (6)
Country | Link |
---|---|
US (4) | US7196931B2 (zh) |
EP (1) | EP1610335B1 (zh) |
CN (2) | CN101615428B (zh) |
AT (2) | ATE447761T1 (zh) |
DE (1) | DE60329924D1 (zh) |
TW (1) | TWI315525B (zh) |
Cited By (7)
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CN103778965A (zh) * | 2012-10-18 | 2014-05-07 | 宜扬科技股份有限公司 | 非挥发性存储装置中的毁损位线地址的取得方法 |
CN103886906A (zh) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | 读取非易失性存储器电流的方法及获取电流分布状态的方法 |
CN104425030A (zh) * | 2013-08-20 | 2015-03-18 | 华邦电子股份有限公司 | 非易失性存储器系统及偏压非易失性存储器的方法 |
CN106960686A (zh) * | 2017-03-31 | 2017-07-18 | 中国科学院微电子研究所 | 一种读取方法及闪存存储器装置 |
CN107886982A (zh) * | 2016-09-30 | 2018-04-06 | 三星电子株式会社 | 补偿跳脱电压的变化的存储器装置及其读取方法 |
CN110718254A (zh) * | 2018-07-11 | 2020-01-21 | 格芯公司 | 包括用于电流感测的分布式基准单元的存储器阵列 |
CN117074836A (zh) * | 2023-10-12 | 2023-11-17 | 成都明夷电子科技有限公司 | 一种激光器检测方法、检测器、电子设备及存储介质 |
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US20070109889A1 (en) | 2007-05-17 |
EP1610335B1 (en) | 2011-11-09 |
US7428171B2 (en) | 2008-09-23 |
DE60329924D1 (de) | 2009-12-17 |
US7551484B2 (en) | 2009-06-23 |
CN101084556B (zh) | 2010-05-05 |
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US7196931B2 (en) | 2007-03-27 |
ATE447761T1 (de) | 2009-11-15 |
EP1610335A3 (en) | 2008-08-06 |
TW200419579A (en) | 2004-10-01 |
US20070109847A1 (en) | 2007-05-17 |
US20040109357A1 (en) | 2004-06-10 |
ATE533160T1 (de) | 2011-11-15 |
CN101615428A (zh) | 2009-12-30 |
US7023736B2 (en) | 2006-04-04 |
CN101615428B (zh) | 2014-04-23 |
TWI315525B (en) | 2009-10-01 |
EP1610335A2 (en) | 2005-12-28 |
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