CN101093811B - Substrate support with electrostatic chuck having dual temperature zones - Google Patents

Substrate support with electrostatic chuck having dual temperature zones Download PDF

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Publication number
CN101093811B
CN101093811B CN2007100976540A CN200710097654A CN101093811B CN 101093811 B CN101093811 B CN 101093811B CN 2007100976540 A CN2007100976540 A CN 2007100976540A CN 200710097654 A CN200710097654 A CN 200710097654A CN 101093811 B CN101093811 B CN 101093811B
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China
Prior art keywords
ceramic disk
substrate
receiving surface
ceramic
electrostatic chuck
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CN2007100976540A
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CN101093811A (en
Inventor
亚历山大·马蒂亚申
丹尼斯·库斯
桑托斯·帕纳格保罗斯
约翰·霍兰德
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Applied Materials Inc
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Applied Materials Inc
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Priority to CN201210033377.8A priority Critical patent/CN102593031B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Abstract

An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.

Description

Substrate support with electrostatic chuck of dual temperature zones
Technical field
The present invention relates to a kind of substrate support that is used for keeping substrate at substrate processing chamber.
Background technology
In the substrate processing such as semiconductor and display, electrostatic chuck is used for keeping substrate at the chamber of handling the layer on the substrate.Typical electrostatic chuck comprises electrode, covers said electrode through the insulator such as pottery or polymer.When electrode was charged, electrostatic charge was accumulated in electrode and the substrate, and caused electrostatic force remains on the substrate in the sucker.Usually, through keeping helium control substrate temperature at the back of substrate, to strengthen the exchange rate of the whole microgap at the interface between the surface of the back of substrate and sucker.Can pass through this electrostatic chuck of base support, wherein this base has passage, thereby in this passage, flows through fluid cooling or heating sucker.After being firmly held in substrate on the sucker, process gas is incorporated in the chamber and is formed for handling the plasma of substrate.Can pass through CVD, PVD, etching, injection, oxidation, nitrogenize or other PROCESS FOR TREATMENT substrates.
During handling, in the radial direction on entire substrate surface, substrate stands non-homogeneous processing speed or other technology characteristics usually, and it can produce on the entire substrate surface handles band with one heart.The gaseous matter in chamber or the distribution of plasma species also possibly cause non-homogeneous treatment characteristic.For example, the distribution of gas possibly change with respect to the position of substrate surface along with air inlet in chamber and exhaust outlet in the whole chamber.In addition, the mass transfer mechanical device also can change gaseous material in the zones of different diffusion on entire substrate surface and the speed that arrives.Non-homogeneous heat load in treatment chamber also possibly cause non-homogeneous processing speed.For example, because the energy that is coupled from plasma sheath course substrate perhaps all possibly cause different heat loads from chamber wall radiation reflected heat.People do not hope on entire substrate, to take place to handle deviation, because the active and passive electronic that can cause the zones of different (for example, peripheral and center area) at substrate to be made like this has different characteristic.
Therefore, during substrate processing, people hope to reduce the processing speed on entire substrate surface and the variation of other treatment characteristics.Simultaneously people also hope to control the temperature of zones of different on the entire process surface of substrate.Hope the Temperature Distribution of control entire substrate during handling in addition.
Summary of the invention
The object of the present invention is to provide a kind of electrostatic chuck and support to keep the substrate support of substrate, it can solve basically because the shortcoming that exists in the prior art produces one or more problem.
According to an aspect of the present invention; The invention provides a kind of electrostatic chuck that in treatment chamber, is used to keep substrate; Said electrostatic chuck comprises: (a) ceramic disk, ceramic disk comprise substrate receiving surface and opposing backside surface, and the said back side comprises a plurality of table tops that separate; (b) a plurality of heat transmit gas conduit, and said a plurality of heat transmit gas conduit and pass ceramic main body and the termination of the opening part on said substrate receiving surface, transmit gas so that heat to be provided to said substrate receiving surface; (c) electrode, said electrode are embedded in the said ceramic disk electrostatic force that is used to keep being placed on the substrate on the said substrate receiving surface with generation; (d) be embedded in first and second heater coils in the said ceramic disk; Said first and second heater coils are radially isolated and around being provided with concentrically with respect to one another; Said first heater coil is positioned at the periphery of said ceramic disk; And said second heater coil is positioned at the core of said ceramic disk; Make said first and second heater coils allow core to said ceramic disk to carry out temperature like this and independently control, and be placed on the substrate temperature distribution on the substrate receiving surface of said ceramic disk with permission adjustment with said table top cooperation on the said back side of said ceramic disk with periphery.
According to a further aspect in the invention; The invention provides a kind of ring assemblies; Said ring assemblies is used to reduce the formation of process deposits thing on the electrostatic chuck and protects said electrostatic chuck not weather; Through the said electrostatic chuck of the base support in the substrate processing chamber, said electrostatic chuck comprises ceramic disk, and said ceramic disk has the peripheral ledge that comprises first and second steps; And said base comprises top surface; Said top surface has the sucker holding portion and surpasses the periphery that said sucker extends, and said ring assemblies comprises: (a) can be fixed to the binding ring of periphery of the top surface of said base, said binding ring has antelabium, top surface and exterior side surfaces; Wherein said antelabium extends radially inwardly on the said first step with the peripheral ledge that is placed on said ceramic disk, thereby between the top surface of said ceramic disk and said base, forms hermetic seal; And (b) edge ring; Said edge ring comprises band, annular exterior wall and flange; Said band has the footing on the said top surface that is placed on said binding ring; Said annular exterior wall centers on the said outside of said binding ring, the said second step of the said peripheral ledge of the said ceramic disk of said flange covers, and said thus binding ring and said edge ring are cooperated to reduce the formation of the process deposits thing on the said electrostatic chuck during the processing substrate in substrate processing chamber; And protect said electrostatic chuck not weather, said electrostatic chuck is supported on the said base.
According to a further aspect in the invention; The invention provides a kind of base that in substrate processing chamber, is used to support electrostatic chuck, it is characterized in that, said electrostatic chuck comprises that (i) has the ceramic disk at the substrate receiving surface and the relative back side; (ii) a plurality of heat transmit gas conduit; Said a plurality of heat transmits gas conduit and passes said ceramic disk and terminate in the port on the said substrate receiving surface, transmits gas so that heat to be provided to said substrate receiving surface, (iii) is embedded in the said ceramic disk to produce the electrode of electrostatic force; And (iv) be embedded in first and second heater coils in the said ceramic disk; Said base comprises: (a) have the metal master of top surface, wherein said top surface comprises sucker holding portion and periphery, and said sucker holding portion is in order to hold the back side of said ceramic disk; Said periphery extends radially outwardly and surpasses said ceramic disk, and said sucker receiving surface comprises the air of peripheral grooves with the back periphery that is contained in said ceramic disk; (b) hot drive access, said hot drive access are used for transmitting gas conduit supply heat transmission gas to the heat of said ceramic disk; (c) a plurality of fluid passages in said metal master are with circulating fluid in said a plurality of fluid passages; (d) be used for the electric connection assembly of conduct electrical power to the said electrode of said electrostatic chuck; Said electric connection assembly comprises the ceramic insulation cover; Embed in the said ceramic insulation cover and be useful on a plurality of binding posts of supplied with electric power to the heater coil of said electrode and said electrostatic chuck, by contact zones around each binding post comprise metal and have a plurality of heat and transmit skylights.
According to a further aspect in the invention; The invention provides a kind of substrate support that in treatment chamber, is used for accommodating substrates; Said assembly comprises: (a) electrostatic chuck; Said electrostatic chuck comprises: (i) comprise the ceramic disk of substrate receiving surface and opposing backside surface, and the peripheral ledge with step; (ii) a plurality of heat transmit gas conduit, and said a plurality of heat transmit gas conduit and pass said ceramic main body and the termination of the port on said substrate receiving surface, transmit gas so that heat to be provided to said substrate receiving surface; (iii) be embedded in the electrode in the said ceramic disk, the chargeable electrostatic force that is used to keep being placed on the substrate on the said substrate receiving surface with generation of said electrode; (b) base, said base comprises metal master, and said metal master has top surface and periphery, and said top surface comprises the sucker holding portion to hold the said back side of said ceramic disk, and said periphery extends radially outwardly and surpasses said ceramic disk; (c) edge ring, said edge ring are arranged on the step of said peripheral ledge of said ceramic disk, with the receiving surface that remains on said ceramic disk on the top edge of substrate form sealing; And (d) binding ring; Said binding ring is fixed to the said periphery on the said base; Said binding ring has antelabium, thereby said antelabium extends radially inwardly to form hermetic seal with said ceramic disk on the said peripheral ledge that is placed on said ceramic disk.
The present invention can realize comprising following one or more advantages.The present invention can reduce the processing speed of substrate surface and the variation of other treatment characteristics, can realize controlling the temperature of zones of different on the entire process surface of substrate simultaneously.Can during handling, control the Temperature Distribution of entire substrate in addition.
Below will combine accompanying drawing to describe one or more execution mode of the present invention in detail.Other purpose of the present invention, characteristic, aspect and advantage following description and combine accompanying drawing and claims in will become more obviously visible.
Description of drawings
Can make said characteristic of the present invention, scheme and advantage more obvious through following specification, claim and accompanying drawing that the embodiment of the invention is shown.But each characteristic that should be appreciated that in the present invention to be adopted should not only limit to concrete diagrammatic sketch, and the present invention includes the combination in any of these characteristics, wherein:
Fig. 1 is the cross section schematic side view of the execution mode of electrostatic chuck;
Fig. 2 is the elevational schematic view of the sucker of Fig. 1;
Fig. 3 is the schematic side view of optic temperature sensor;
Fig. 4 A and Fig. 4 B are the overlooking (Fig. 3 A) and look up the perspective diagram of (Fig. 3 B) of execution mode that comprises the substrate support of base and electrostatic chuck;
Fig. 5 A is the cross section schematic side view of the ring assemblies on the substrate support of Fig. 4 A and Fig. 4 B;
Fig. 5 B is the partial enlarged drawing of the ring assemblies of Fig. 5 A;
Fig. 6 is the cross section schematic side view of execution mode of the electric coupler component of base;
Fig. 7 is the cross section schematic side view of the execution mode of contact zones; And
Fig. 8 is the cross section schematic side view of execution mode with substrate processing chamber of substrate support.
Embodiment
As shown in Figure 1, an execution mode of electrostatic chuck 20 comprises the ceramic disk 24 with substrate receiving surface 26, and wherein substrate receiving surface 26 is top surfaces of disk 24 and is used as accommodating substrates 25.Ceramic disk 24 also has and substrate receiving surface 26 opposing backside surface 28.Ceramic disk 24 has the peripheral ledge 29 that comprises first step 31 and second step 33.Ceramic disk comprises a kind of following material at least: the mixture of aluminium oxide, aluminium nitride, silica, carborundum, silicon nitride, titanium oxide, zirconia and above-mentioned substance.Ceramic disk 24 can be the whole single pottery of being processed by hot pressing and sintering ceramic powder, and the form of processing sintering then is to form the net shape of disk 24.
The back side 28 of ceramic disk 24 comprises a plurality of table tops that separate 30.In a scheme, table top 30 is columnar projections of utilizing a plurality of gaps 32 to be separated from each other.In use, by filling gap 32 to regulate from the back side 28 heat transfer rates to other lower surfaces such as the gas of air.In one embodiment, table top 30 comprises columnar projections, columnar projections even can be shaped as pillar, and columnar projections extends upward from surface 28, and pillar has rectangle or circular section shape.The height of table top 30 can be from about 10 to about 50 microns, and the width of table top 30 (perhaps diameter) is from about 500 to about 5000 microns.Yet table top 30 also can have other shape and size, for example, and circular cone or rectangular block, perhaps even not unidimensional flange.In a scheme, utilize the pearl bombardment back side 28 to form table top 30 with suitable little average bead size (for example tens microns), have the moulding table top 30 of interfering gap 32 with formation with the material that utilizes corrosion method to etch away the back side 28.
Ceramic disk 24 also is included in the electrode 36 that embeds in the ceramic disk 24, is used to keep being placed on the electrostatic force of the substrate on the substrate receiving surface 26 with generation.Electrode 36 is the conductors such as metal, and is configured as list or bipolar electrode.Single electrode comprises single conductor, and has with the single of external power source and be electrically connected, and with the isoionic discharging substance cooperation of the covering that in chamber, forms so that the entire substrate of holding on the sucker 20 is applied bias voltage.Bipolar electrode has two or more conductors, and wherein each conductor applies bias voltage is used to keep substrate with generation electrostatic force with respect to other conductors.Electrode 36 can be shaped as woven wire or has the metal dish of suitable open area.For example, comprise that unipolar electrode 36 can be the single continuous metal silk screen in the ceramic disk that is embedded in as shown in the figure.An execution mode that comprises the electrode 36 of bipolar electrode can be the C type dish of the straight wall of C type a pair of embedding respect to one another.Electrode 36 can be by the alloy composition of aluminium, copper, iron, molybdenum, titanium, tungsten or above-mentioned metal.A scheme of electrode 36 comprises the molybdenum net.Electrode 36 links to each other with binding post 58, and wherein binding post 58 will be fed to electrode 36 from the electrical power of external power source.
Ceramic disk 24 also has a plurality of heat and transmits gas conduit 38a, 38b, and a plurality of heat transmit gas conduit 38a, 38b through ceramic main body and terminate in the port 40a, 40b of substrate receiving surface 26, transmit gas so that heat to be provided to substrate receiving surface 26.To transmit bottom that gas be fed to substrate back 34 to conduct heat, to make the heat of being conducted such as the heat of helium away from covering substrate 25 and arriving the receiving surface 26 of ceramic disk 24.For example, can locate the first gas conduit 38a and transmit gas, and can locate the second gas conduit 38b with peripheral thermal treatment zone 42b supply heat transmission gas to substrate receiving surface 26 to supply heat to the thermal treatment zone, center of substrate receiving surface 26 42a.The thermal treatment zone, the center 42a of the substrate receiving surface 26 of ceramic disk 24 and peripheral thermal treatment zone 42b allow the appropriate section on substrate processing surface 44, and for example the central upper portion of substrate 25 and outer peripheral areas 46a, b keep different temperature respectively.
Use a plurality of heater coils 50,52; For example be embedded in first heater coil 50 and second heater coil 52 in the ceramic disk 24, can further be controlled at the thermal treatment zone, center 42a and the temperature at 42b place, the peripheral thermal treatment zone of the substrate receiving surface 26 of ceramic disk 24.For example, heater coil 50,52 can radially separate and about being the concentric circles setting each other.In a scheme, first heater coil 50 is positioned at the core 54a of ceramic disk 24, and second heater coil 52 is positioned at the periphery 54b place of ceramic disk 24.First and second heater coils 50,52 allow the core 54a of independent control ceramic disk 24 and the temperature of periphery 54b, and further with at the table top on the back side 28 of ceramic disk 24 30 cooperate to allow to regulate the Temperature Distribution of the substrate 25 on the receiving surface 26 that is placed on ceramic disk 24.
Each heater coil 50,52 all has the ability of the temperature of independent control thermal treatment zone 42a, 42b, realizes different processing speed or characteristic with the radial direction in the treatment surface 44 of entire substrate 25.Likewise, can keep the temperature of different temperature, thereby offset the gaseous matter distribution or the heat load of any change that during the processing of substrate 25, takes place at two thermal treatment zone 42a, b with the central upper portion that influence substrate 25 and outer peripheral areas 46a, b.For example; When at the gaseous matter at the periphery 46b place of the treatment surface 44 of substrate 25 not when the gaseous matter of core 46a enlivens; The temperature of peripheral thermal treatment zone 42b is brought up to the temperature that is higher than the thermal treatment zone, center 42a, more consistent processing speed or treatment characteristic is provided with entire process surface 44 at substrate 25.
In a scheme, first and second heater coils 50,52 all comprise the circular rings of stratie, and wherein stratie is arranged side by side, and even can be basically on identical plane.For example, heater coil 50,52 can be the continuous concentric ring that radially inwardly spirals gradually in the main body of ceramic disk 24. Heater coil 50,52 can also be the spiral coil that revolves around the reel through hub of a spool, for example is similar to filament for electric lamp, and it is arranged in the whole intraindividual concentric circles of ceramic disk 24.Stratie can be made up of different resistance materials, such as for example molybdenum.In a scheme, heater coil 50,52 all comprise sufficiently high resistance with the substrate receiving surface 26 of keeping ceramic disk 24 from about 80 to about 250 ℃ temperature.In a scheme, the resistance of coil is from about 4 to about 12 ohm.In an example, first heater coil 50 has 6.5 ohm resistance and second heater coil 52 has 8.5 ohm resistance.Independent binding post 58a-d via extending through ceramic disk 24 provides energy to heater coil 50,52.
In conjunction with heater coil 50,52, also can in two district 42a, b, control the pressure that heat transmits gas, so that the substrate processing speed on the entire substrate 25 is more even.For example, two district 42a, b can be set under different balance pressure, keep heat to transmit gas so that the different heat transfer rates from the back 34 of substrate 25 to be provided.Under two different pressure, supply heat through conduit 38a, 38b respectively and transmit gas completion this point, thereby discharge at two diverse location places of substrate receiving surface 26.
Electrostatic chuck 20 can also comprise optic temperature sensor 60a, b, and optic temperature sensor 60a, b are passed in hole 62a in the ceramic disk 24, b with contact and accurately measure central upper portion and the periphery 46a of substrate 25, the temperature of b.The thermal treatment zone, the center 42a that first sensor 60a is positioned at ceramic disk 24 sentences the temperature of the core 46a that reads substrate 25, and the second transducer 60b peripheral thermal treatment zone 42b that is positioned at ceramic disk 24 sentences the temperature of the periphery 46b that relatively reads substrate 25.Optic temperature sensor 60a, b are arranged in sucker 20, make the substrate receiving surface 26 of contact 64a, b and ceramic disk 24 of transducer be arranged in same plane, thereby sensor contact 64a, b can contact the back side 34 of the substrate 25 that remains on the sucker 20.The arm 66a of transducer 60a, b, b pass through the main body vertical extent of ceramic disk 24.
As shown in Figure 3, in a scheme, each optic temperature sensor 60 comprises heat sensor probe 68, and this probe 68 comprises copper cap 70, and copper cap 70 is configured as the closing cylinder that has sidewall 72 and be used as the dome-shaped top 74 of contact.Copper cap 70 can be made up of oxygenless copper material.Phosphorus plug 76 embeds inner, and directly contacts with the top 74 of copper cap 70.The 76 pairs of hot pickup probes 68 of phosphorus plug that are embedded in the copper cap 70 provide faster and more responsive thermal response.The contact 64 of copper cap 76 is that dome-type top 74 is to allow can not corrode or destroy substrate with the repeating contact of different substrates 25.Copper cap 70 has the groove 78 that is used for receiving ring epoxy resins 79 to paste caps 70 at sensor probe 68.
Phosphorus plug 76 is converted into heat the photon that passes fibre bundle 80 with the infrared radiation form.Fibre bundle 80 can be fibrous by borosilicate glass.Surround fibre bundle 80 through sleeve pipe 82, overlap 84 part annular sleeves 82 through thermal insulation conversely, thermal insulation cover 84 is used for temperature sensor and the base thermal insulation that supports ceramic disk.Sleeve pipe 82 can be the better thermal insulation of glass tube to provide and to construct on every side, but sleeve pipe 82 can also be processed by the metal such as copper.Thermal insulation cover 84 can be made up of PEEK, polyether-ether-ketone, but also can be (polytetrafluoroethylene) by the Dupont de Nemours manufactured of Delaware.
Like Fig. 4 A, 4B and shown in Figure 5, substrate support 90 comprises the electrostatic chuck 20 that is fixed to base 91, and wherein base 91 is used for supporting and fixing sucking disk 20.Base 91 comprises the metal master 92 with top surface 94, and wherein top surface 94 has sucker holding portion 96 and periphery 98.The sucker holding portion 96 of top surface 94 is suitable for holding the back side 28 of the ceramic disk 24 of electrostatic chuck 20.The periphery 98 of base 91 extends radially outwardly above ceramic disk 24.The periphery 98 of base 91 can be suitable for holding binding ring 100, and this binding ring can be fixed on the top surface of periphery of base.The metal master 92 of base 91 has a plurality of paths 102 from the basal surface 104 of base to the top surface 94 of base 91, for example is used for, and holds terminal 58a-b or sends into gas conduit 38a, the b of gas to ceramic disk 24.
The sucker holding portion 96 of the top surface 94 of base 91 comprises one or more groove 106a, b, keeps and moving air with the whole back side in ceramic disk 24.In one embodiment, sucker holding portion 96 comprises peripheral grooves 106a, and a plurality of table tops 30 cooperations on the back side 28 of this peripheral grooves 106a and ceramic disk 24 are with the heat transfer rates of control from the periphery 54b of ceramic disk 24.In another embodiment, use central recess 106b, to regulate heat transmission from the core 54a of ceramic disk 24 in conjunction with peripheral grooves 106a.
Groove 106a in the top surface 94 of base 91, b and 30 cooperations of the table top on the back side 28 of ceramic disk 24 are with the temperature of further adjusting entire substrate treatment surface 44.For example, the contact surface total amount of the shape of table top 30, the size table top 30 that control contacts with the top surface 94 of base 91 with spacing, thereby total heat transfer area of control interface.For example, can design the shape and the size of table top 30, make the back side 28 of ceramic disk 24 in fact only have the gross area 50% or still less, for example 30% contact with the top surface 94 of base 91.Contact area is more little, and the temperature of entire substrate treatment surface 44 is high more.Equally, between the table top 30 and the whole back side 28, provide air to be used as further adjustment.
Can be on the whole back side 28, be distributed in the table top 30 on the back side 28 of ceramic disk 24 with even or non-uniform patterns.In uniform pattern,, and on whole surperficial 28, change with the non-homogeneous clearance distance that separates as substantially the same through the distance between the table top 30 shown in the gap 32.Can also on whole surperficial 28, change the shape and size of table top 30.For example; The pattern that table top 30 heterogeneous can be set is to provide different contact surface amounts in different zones on the whole back side 28 of ceramic disk 24; Controlling heat transfer rates respectively, and therefore be controlled at central upper portion and the periphery 46a of substrate 25, the temperature at b place from the center of disk 24 and periphery 54a, b.
Base 91 also comprises a plurality of passages 110 that are used to circulate such as the fluid of water.Base 91 with circulating cooling fluid is used as the temperature of heat exchanger with control sucker 20, thereby on the entire process surface 44 of substrate 25, reaches temperature required.Can heat or cool off the fluid that passes passage 110 to improve or to reduce the temperature of sucker 20 and the temperature of the substrate 25 that on sucker 20, keeps.In a scheme, the shape of designed channel 110 flows through from passage to allow fluid with size, thereby the temperature of base 91 is remained on from about 0 to 120 ℃.
Base 91 also comprises the electric connection assembly that is used for power supply is transmitted to the electrode 36 of electrostatic chuck 20.Electric connection assembly 120 comprises ceramic insulation cover 124.Ceramic insulation cover 124 can be an aluminium oxide.A plurality of binding posts 58 are embedded in the ceramic insulation cover 124.Binding post 58,58a-b provide electrical power to the electrode 36 and the heater coil 50,52 of electrostatic chuck 20.For example, binding post 58 can comprise the copper post.
As shown in Figure 7, configuration contact zones 140 make binding post 58, the 58a-d of contact zones 140 around the electric connection assembly.Each contact zones 140 comprises metal, for example copper alloy.The main structure body of contact zones 140 comprises and being suitable for around binding post 58 housing mounted 142.The shape dependence of shell 142 is in the shape of post 58, and preferably, should imitate the shape of post 58.The part of shell 142 or bar 146 comprise have a plurality of seams 148 and an a plurality of heat exchanges skylight 150 be with 144, thereby be arranged alternately skylight 150 with the said seam 148 of certain design with this seam.In one embodiment, a plurality of seams 148 and skylight 150 extend to the feather edge 154 of bar 146 or the part of shell 142 from the top edge 152 of bar 146.A plurality of seams 148 form with skylight 150 and reduce shell 142 hardness and allow shell to meet the spring-like characteristic in the external surface shape at binding post 58 or terminal.The structure of a plurality of seams 148 on the bar 146 of shell 142 through the characteristic of his spring-like, makes binding post 58 contact with the main region of the interior exposed surface 143 of shell 142.This makes realizes that between contact zones 140 and terminal optimal heat transmits.
Shown in Fig. 5 A and Fig. 5 B, ring assemblies 170 can also be set form the process deposits thing, and protect this outer peripheral areas not weather with the outer peripheral areas that reduces at substrate support 90, said substrate support 90 comprises the electrostatic chuck 20 that is supported by base 91.Ring assemblies 170 comprises binding ring 100, and binding ring 100 is fixed to through the fixture such as screw or bolt (not shown) on the periphery 98 of top surface 94 of base 91.Binding ring 100 has laterally and the antelabium 172, top surface 174 and the exterior side surfaces 176 that extend radially inwardly.Antelabium 171 has the lower surface 173 on the first step 31 of peripheral ledge 29 of ceramic disk of being arranged on 24, to form hermetic seals with ceramic disk 24.In a scheme, lower surface 173 comprises polymeric layer, for example comprises polyimides, to form good hermetic seal.Binding ring 100 is processed by the material that can resist plasma erosion, for example such as the metal material of stainless steel, titanium or aluminium, perhaps such as the ceramic material of aluminium oxide.
Ring assemblies also comprises edge ring 180, and edge ring 180 comprises is with 182, and is said with 182 footings 184 that have on the top surface 174 that is arranged on binding ring 100.Edge ring also has around the annular outer wall 186 of the exterior side surfaces 176 of binding ring 100, with reduce or even stop the deposition of sputtering sedimentation thing on binding ring 100 fully, otherwise this exterior side surfaces 176 will be exposed to process environments.Edge ring 180 also comprises the flange 190 of the second step 33 of the peripheral ledge 29 that hides ceramic disk 24.Flange 190 is included in the cantilever edge 196 following protrusions 194 that stop of substrate 25.The interior circumference of flange 190 stop collars 190 wherein encircles the zone of 190 ceramic disk 24 that do not covered by substrate 25 with protection during handling around the periphery of substrate 25.The binding ring 100 of ring assemblies 170 and edge ring 180 cooperations are with in the formation that on the electrostatic chuck 20 that supports on the base 91, reduces the process deposits thing during the processing of substrate 25, and protection electrostatic chuck 20 does not weather.The side surface of the exposure of edge ring 180 protection substrate supports 90 is to reduce the erosion of energetic plasma material.Ring assemblies 170 can be removed easily and entire substrate support 90 to be cleaned needn't be removed to clean deposit, to make from the exposed surface of ring 100,180.Edge ring 180 comprises pottery, and is for example quartzy.
In lining processor 200, can adopt the substrate support 90 that comprises electrostatic chuck 20 and base 91, the exemplary form of lining processor is shown in Fig. 8.Device 200 comprises the chamber 201 with enclosure wall 202, and in a scheme, chamber 201 is DPS Advantage chambers.Source of the gas 204 provides process gas through pore 203 to chamber, and this process gas is for handling the gas of substrate 25, such as etching gas, for example, such as the Halogen gas of chlorine or hydrogen chloride; Perhaps, for example, be used for the gas of deposit dielectric or semi-conducting material such as the deposition gases of CVD or PVD gas.Gas exciter 208 is set is used for applying electric capacity or inductance coupling high RF energy to process gas respectively, perhaps Transmission Microwave energy in the process gas (not shown), thus form high energy gas to handle substrate 25.For example, the wall electrical ground 202 via electrode supply 230 and chamber 201 can apply RF voltage and apply the capacitive character energy to process gas through the electrode 36 to electrostatic chuck 20.Electrode supply 230 also provides DC to attract the electrode 36 of voltage with charging sucker 20, thereby static keeps substrate 25.Via induction coil 205, can also be through process gas being applied energy to process gas coupling inductance energy.Alternatively, via the microwave catheter in the long-range chamber (not shown), through the coupling microwave energy that applies to process gas to the process gas energize.In chamber 201, substrate 25 is remained on the receiving surface 26 of electrostatic chuck 20, and electrostatic chuck 20 is positioned on the base 91.
Through controller 212 control chambers; Its middle controller 212 generally includes computer 308; Said computer 308 has the central processing unit (CPU) that is connected with peripheral computer components with memory, the Pentium processor of the commercialization that CPU such as the Intel Company from California Santa Clara makes.Memory can comprise such as the mobile memory of CD or floppy disk, such as the not removable memory and the random asccess memory (RAM) of hard disk.Controller 212 can also comprise hardware interface, and said hardware interface comprises analog or digital input and output plate and motor controller plate.The operator can communicate by letter with chamber controller 212 via display or data inserter spare.In order to select concrete screen or function, the operator uses such as the data inserter spare input of keyboard or light pen and selects.
Controller 212 also comprises the computer-readable medium that is stored in the memory, and said computer-readable medium comprises can control and keep watch on the processing coding of in chamber 201, carrying out technology.Can be with any traditional calculating machine readable medium language computer-readable medium.Single or a plurality of files that adopt the traditional text editing machine that suitable program coding is input to, and the computer of storing or be embodied in memory can use in the medium.If the text encoded of input is high-level language, editor's coding, and the editing machine that produces then coding is connected with the target code of preedited storehouse application program.In order to carry out connection, editor's target code, user's invocation target coding makes CPU read and carries out coding to accomplish in program, discerning of task.Program can comprise the temperature of temperature control instruction collection with the zones of different place of control substrate 25; For example independently apply different electrical power through first and second heater coils 50,52 to the ceramic disk 24 of sucker 20, the heat of adjustment through conductor 38a, b transmits gas flow and the control flow rate of fluid through the passage 110 of base 91.Process feedback control command collection can flow with the fluid that adjustment imposes on the passage 110 of the power such as the chamber element of heater coil 50,52, the heat transfer gas stream that passes through conduit 38a, b and process base 91 as the feedback control loop between the monitoring temperature instruction set, and the monitoring temperature instruction set receives temperature signal from optic temperature sensor 60a, b.When being described as being used to process the independent instruction set of a series of tasks, each instruction set can combine with other instruction set or be staggered; Therefore, chamber controller 212 and computer-readable medium described here should not be confined to the concrete scheme of functional programs described here.
Though with reference to some preferred versions the present invention has been described, yet, also can there be other scheme.For example, except described herein, substrate support can be used for other chamber and other technology.Therefore, appending claims should not be limited to the description at this preferred version that comprises.

Claims (24)

1. electrostatic chuck that in treatment chamber, is used to keep substrate, said electrostatic chuck comprises:
(a) ceramic disk, said ceramic disk comprises substrate receiving surface and opposing backside surface, the said back side comprises a plurality of table tops that separate;
(b) a plurality of heat transmit gas conduit, and said a plurality of heat transmit gas conduit and pass ceramic main body and the termination of the opening part on said substrate receiving surface, transmit gas so that heat to be provided to said substrate receiving surface;
(c) electrode, said electrode are embedded in the said ceramic disk, are used to keep being placed on the electrostatic force of the substrate on the said substrate receiving surface with generation;
(d) be embedded in first and second heater coils in the said ceramic disk; Said first and second heater coils are radially isolated and around being provided with concentrically with respect to one another; Said first heater coil is positioned at the periphery of said ceramic disk; And said second heater coil is positioned at the core of said ceramic disk
Making said first and second heater coils allow that the core of said ceramic disk and periphery are carried out temperature so independently controls; And with the said back side of said ceramic disk on said table top cooperation with allow adjustment and be placed on that substrate temperature on the substrate receiving surface of said ceramic disk distributes and
In use in the space between said table top gas is provided thus, to regulate from the back side to the heat transfer rates of other lower surfaces.
2. sucker according to claim 1 is characterized in that, said first and second heater coils comprise at least one feature:
(i) said heater coil is arranged side by side;
(ii) said heater coil is basically on identical plane;
(iii) each said heater coil all comprises the stratie that contains molybdenum; And
(iv) each said heater coil all comprise sufficiently high resistance with the substrate receiving surface that keeps said ceramic disk be in from about 80 ℃ to about 250 ℃ temperature.
3. sucker according to claim 1 is characterized in that, said ceramic disk comprises at least a following material: the mixture of aluminium oxide, aluminium nitride, silica, carborundum, silicon nitride, titanium oxide, zirconia and above-mentioned substance.
4. sucker according to claim 1 is characterized in that, the said a plurality of table tops on the said back side on the said ceramic disk comprise columnar projections.
5. sucker according to claim 1 is characterized in that, said ceramic disk comprises peripheral ledge to hold binding ring, and said binding ring forms sealing around said ceramic disk.
6. sucker according to claim 1 is characterized in that, also comprises first and second optic temperature sensors that are embedded in the said ceramic disk, and said optic temperature sensor has at least one feature:
(i) said first sensor is positioned at the said core of said ceramic disk, and said second transducer is positioned at the said periphery of said ceramic disk;
(ii) said optic temperature sensor comprises the phosphorus layer, the optical fiber of said phosphorus aspect in being embedded in the copper antelabium;
(iii) each said optic temperature sensor comprises the thermal insulation cover, the heat of the base of said thermal insulation cover said temperature sensor of insulation and the said ceramic disk of support.
7. ring assemblies; Said ring assemblies is used to reduce the formation of process deposits thing on the electrostatic chuck and protects said electrostatic chuck not weather; Through the said electrostatic chuck of the base support in the substrate processing chamber; Said electrostatic chuck comprises: (i) ceramic disk, and said ceramic disk comprises substrate receiving surface and opposing backside surface, the said back side comprises a plurality of table tops that separate; (ii) be embedded in first and second heater coils in the said ceramic disk; Said first and second heater coils separate; Said first heater coil is positioned at the periphery of said ceramic disk, and said second heater coil is positioned at the core of said ceramic disk; (iii) comprise the peripheral ledge of first and second steps, said base comprises top surface, and said top surface has the sucker holding portion and surpasses the periphery that said sucker extends, and said ring assemblies comprises:
(a) can be fixed to the binding ring of periphery of the top surface of said base; Said binding ring has antelabium, top surface and exterior side surfaces; Wherein said antelabium extends radially inwardly on the said first step with the peripheral ledge that is placed on said ceramic disk, thereby between the top surface of said ceramic disk and said base, forms hermetic seal; And
(b) edge ring; Said edge ring comprises band, annular exterior wall and flange; Said band has the footing on the said top surface that is placed on said binding ring; Said annular exterior wall is around the said outside of said binding ring, the said second step of the said peripheral ledge of the said ceramic disk of said flange covers
Said thus binding ring and the cooperation of said edge ring reduce the formation of the process deposits thing on the said electrostatic chuck during in substrate processing chamber, handling substrate, and protect said electrostatic chuck not weather, and said electrostatic chuck is supported on the said base,
Said thus first and second heater coils allow that the core of said ceramic disk and periphery are carried out temperature and independently control; And with the said back side of said ceramic disk on said table top cooperation with allow adjustment and be placed on that substrate temperature on the substrate receiving surface of said ceramic disk distributes and
In use in the space between said table top gas is provided thus, to regulate the heat transfer rates from the back side to the base.
8. assembly according to claim 7 is characterized in that said edge ring comprises pottery.
9. assembly according to claim 8 is characterized in that said pottery comprises quartz.
10. assembly according to claim 7 is characterized in that said binding ring comprises aluminium or titanium.
11. assembly according to claim 7 is characterized in that, the antelabium of said binding ring comprises the lower surface on the first step of the peripheral ledge that is placed on said ceramic disk, and said lower surface comprises polymeric layer.
12. assembly according to claim 7 is characterized in that, said polymeric layer comprises polyimides.
13. a base that in substrate processing chamber, is used to support electrostatic chuck is characterized in that, said electrostatic chuck comprises that (i) has the ceramic disk at the substrate receiving surface and the relative back side; The said back side comprises a plurality of table tops that separate; (ii) a plurality of heat transmit gas conduit, and said a plurality of heat transmit gas conduit and pass said ceramic disk and terminate in the port on the said substrate receiving surface, transmit gas so that heat to be provided to said substrate receiving surface; (iii) be embedded in the said ceramic disk to produce the electrode of electrostatic force; And (iv) be embedded in first and second heater coils in the said ceramic disk, and said first and second heater coils separate, and said first heater coil is positioned at the periphery of said ceramic disk; And said second heater coil is positioned at the core of said ceramic disk, and said base comprises:
(a) has the metal master of top surface; Wherein said top surface comprises sucker holding portion and periphery; Said sucker holding portion is in order to hold the back side of said ceramic disk; Said periphery extends radially outwardly and surpasses said ceramic disk, and said sucker receiving surface comprises the air of peripheral grooves with the back periphery that is contained in said ceramic disk;
(b) be used for transmitting the hot drive access that gas conduit supply heat transmits gas to the heat of said ceramic disk;
(c) a plurality of fluid passages in said metal master are with circulating fluid in said a plurality of fluid passages;
(d) be used for the electric connection assembly of conduct electrical power to the said electrode of said electrostatic chuck; Said electric connection assembly comprises the ceramic insulation cover; In said ceramic insulation cover, embed and be useful on a plurality of binding posts of supplied with electric power to the heater coil of said electrode and said electrostatic chuck; By contact zones around each binding post comprise metal and have a plurality of heat and transmit skylights
Said thus first and second heater coils allow that the core of said ceramic disk and periphery are carried out temperature and independently control; And with the said back side of said ceramic disk on said table top cooperation with allow adjustment and be placed on that substrate temperature on the substrate receiving surface of said ceramic disk distributes and
In use in the space between said table top gas is provided thus, to regulate from the back side to the heat transfer rates of other lower surfaces.
14. base according to claim 13 is characterized in that, wherein said peripheral grooves on the said sucker receiving surface of said base and said table top cooperation is with the rate of heat delivery of control from the periphery of said ceramic disk.
15. base according to claim 13 is characterized in that, said sucker receiving surface also comprises central recess, and said central recess and the cooperation of said table top are with the rate of heat delivery of control from the core of said ceramic disk.
16. a substrate support that in treatment chamber, is used for accommodating substrates, said assembly comprises:
(a) electrostatic chuck, said electrostatic chuck comprises:
(i) comprise the ceramic disk of substrate receiving surface and opposing backside surface and the peripheral ledge with step, the said back side comprises a plurality of table tops that separate;
(ii) a plurality of heat transmit gas conduit, and said a plurality of heat transmit gas conduit and pass said ceramic main body and the termination of the port on said substrate receiving surface, transmit gas so that heat to be provided to said substrate receiving surface;
(iii) be embedded in the electrode in the said ceramic disk, the chargeable electrostatic force that is used to keep being placed on the substrate on the said substrate receiving surface with generation of said electrode; With
First and second heater coils of (iv) radially isolating, said first heater coil is positioned at the periphery of said ceramic disk, and said second heater coil is positioned at the core of said ceramic disk
(b) base, said base comprises metal master, and said metal master has top surface and periphery, and said top surface comprises the sucker holding portion to hold the said back side of said ceramic disk, and said periphery extends radially outwardly and surpasses said ceramic disk;
(c) edge ring, said edge ring are arranged on the step of said peripheral ledge of said ceramic disk, with the receiving surface that remains on said ceramic disk on the top edge of substrate form sealing; And
(d) binding ring, said binding ring are fixed to the said periphery on the said base, and said binding ring has antelabium, and said antelabium extends radially inwardly with on the said peripheral ledge that is placed on said ceramic disk, thereby form hermetic seal with said ceramic disk,
Said thus first and second heater coils allow that the core of said ceramic disk and periphery are carried out temperature and independently control; And with the said back side of said ceramic disk on said table top cooperation with allow adjustment and be placed on that substrate temperature on the substrate receiving surface of said ceramic disk distributes and
In use in the space between said table top gas is provided thus, to regulate from the back side to the heat transfer rates of other lower surfaces.
17. support according to claim 16 is characterized in that, said edge ring comprises pottery.
18. support according to claim 17 is characterized in that, said pottery comprises quartz.
19. support according to claim 16 is characterized in that, said binding ring comprises aluminium or titanium.
20. support according to claim 16 is characterized in that, the antelabium of said binding ring comprises the lower surface that contacts with said ceramic disk, and said lower surface comprises polymeric layer.
21. support according to claim 16 is characterized in that, said first and second heater coils are each other around being provided with one heart.
22. support according to claim 16 is characterized in that, the said sucker receiving surface of said base comprises peripheral grooves, with the said table top ambient air at the said back side that is contained in said ceramic disk.
23. support according to claim 16 is characterized in that, the top surface of said base comprises central recess.
24. support according to claim 16; It is characterized in that; Said base comprises the electric connection assembly that is used for to the said electrode conduct electrical power of said electrostatic chuck; Said electric connection assembly comprises the ceramic insulation cover, embed in the said ceramic insulation cover and be useful on a plurality of binding posts to the heater coil supplied with electric power of said electrode and said electrostatic chuck, each said binding post by contact zones around.
CN2007100976540A 2006-04-27 2007-04-27 Substrate support with electrostatic chuck having dual temperature zones Active CN101093811B (en)

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JP5183092B2 (en) 2013-04-17
KR20070105929A (en) 2007-10-31
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KR101380879B1 (en) 2014-04-02
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