CN101095197B - 浮动栅极之间的耦合效应减小的nand电可擦除可编程只读存储器 - Google Patents
浮动栅极之间的耦合效应减小的nand电可擦除可编程只读存储器 Download PDFInfo
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- CN101095197B CN101095197B CN2005800437188A CN200580043718A CN101095197B CN 101095197 B CN101095197 B CN 101095197B CN 2005800437188 A CN2005800437188 A CN 2005800437188A CN 200580043718 A CN200580043718 A CN 200580043718A CN 101095197 B CN101095197 B CN 101095197B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
Abstract
Description
Claims (30)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/021,872 | 2004-12-23 | ||
US11/021,872 US7230851B2 (en) | 2004-12-23 | 2004-12-23 | Reducing floating gate to floating gate coupling effect |
PCT/US2005/045339 WO2006071541A1 (en) | 2004-12-23 | 2005-12-15 | Nand-eeprom with reduction of floating gate to floating gate coupling effect |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101095197A CN101095197A (zh) | 2007-12-26 |
CN101095197B true CN101095197B (zh) | 2010-05-12 |
Family
ID=36390280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800437188A Expired - Fee Related CN101095197B (zh) | 2004-12-23 | 2005-12-15 | 浮动栅极之间的耦合效应减小的nand电可擦除可编程只读存储器 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7230851B2 (zh) |
EP (1) | EP1829046A1 (zh) |
JP (1) | JP2008525933A (zh) |
KR (1) | KR100868805B1 (zh) |
CN (1) | CN101095197B (zh) |
TW (1) | TWI308337B (zh) |
WO (1) | WO2006071541A1 (zh) |
Families Citing this family (249)
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