CN101136618A - 可调谐铁电滤波器 - Google Patents

可调谐铁电滤波器 Download PDF

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CN101136618A
CN101136618A CNA2007101357923A CN200710135792A CN101136618A CN 101136618 A CN101136618 A CN 101136618A CN A2007101357923 A CNA2007101357923 A CN A2007101357923A CN 200710135792 A CN200710135792 A CN 200710135792A CN 101136618 A CN101136618 A CN 101136618A
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capacitor
tunable
ferroelectric
loss
gap
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CN101136618B (zh
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斯坦利·斯拉夫科·通西赫
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Kyocera Corp
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Abstract

本发明对具有铁电电容器的可调谐带通滤波器中的损耗进行量化并设法使之减小。在给定所需的插入损耗和谐振器的品质因子后，考虑由铁电电容器特定拓扑结构引致的几何损耗以及金属损耗，从而定量出可接受的铁电损耗。

Description

可调谐铁电滤波器
本申请为2002年4月2日提交的、申请号为02811167.2、发明名称为“可调谐铁电滤波器”的专利申请的分案申请。
相关申请
本申请请求享有特此通过参照方式结合到本申请中的于2001年4月11日提交的美国临时申请60/283,093的优先权权益。
背景技术
现有技术说明
滤波器，诸如带通滤波器，被广泛应用于通信与电子领域。例如，在无线电通信中一个特定频段必须容纳许多无线用户。为了容纳这么多的无线用户，对对带通滤波的要求就必须非常严格，因为所提供的频率分配非常密集。
目前，无线手机使用固定调谐的带通滤波器(BPF)以满足它们的滤波规范。因为这些滤波器必须满足通带插入损耗(I.L.)尽可能最小的要求且同时必须满足特定的高带外抑制要求，其设计非常复杂。作为特殊的例子，可以考虑使用固定带宽滤波器的全频带PCS CDMA手机。PCS发送(TX)频带(在美国为1850-1910MHz)的带内I.L.不会大于-3.5dB，而接收(RX)频带(1930-1990MHz范围)的带外抑制至少为38.0dB。
而且，这种BPF除了必须满足这些规范外，其高度还有最大限制。例如，目前其在手机中的典型限高是4.0mm或更小。为了满足这些苛刻的电气要求且同时满足尺寸与高度尽可能最小的要求，通常需要采用由单个同轴谐振器元件或者整体结构构造的高阶(>2阶)固定调谐滤波器。此外，为了满足带外抑制要求，通常需要一个传输零点，越靠近频带边缘I.L.就越大。由于陶瓷中的变化以及制造公差，因此厂家在固定调谐滤波器的制造过程中必须一个一个单独地对它们的特性进行调整，这就增加了成本花费。
而且，如果要支持一个以上频带(例如，在美国、韩国与印度支持PCS频带)，则需要多个固定调谐的BPF，因此需要额外的开关元件且因而引入了附加损耗。即使所用的功率放大器和低噪声放大器具有足够的工作带宽以覆盖这些频带，但仍然需要多个固定调谐的BPF。
可调谐BPF允许在任意特定时间在多个频带上使用一个BPF，或者使用低阶滤波器以覆盖宽于所需通带带宽的多个频带。为了在可调谐BPF中提供可调谐性，典型地使用一种能够提供可变电容的元件。
目前可变电容器的结构实现形式有多种。例如，可移动平行板结构的电容器很多年以来一直就被用作家用收音机的调谐器。但是，这样的平行板体积庞大，噪声高，并且不实用于现代应用。
另一种结构选择是电子变容二极管，它是一种响应于外加电压而调整电容值的半导体器件。因为变容二极管通常有噪声并且有损耗，尤其是在500MHz以上的应用中，所以其不能有效工作于需要高性能的高频、低损耗的应用当中。
还有一种结构选择是微电子机械系统(MEMS)，它是一种微型开关器件，它可以响应外加控制信号在电容器之间进行切换。但是，其造价昂贵，难以制造并且其可靠性未得到证实。在大多数情形下，其提供离散的调谐，因为系统必须在有限(和少量)数目的固定电容器之间进行选择。
铁电可调谐电容器是人们曾经尝试过的另一种结构选择。铁电(f-e)材料是一类材料，典型地是陶瓷稀土氧化物，其突出特征在于，它们的介电常数(k)以及作为结果的电容率(∈)是响应外加的缓变(直流或低频)电场的变化而改变的。材料的介电常数(k)和电容率(∈)之间关系给出如下：
∈＝k∈0
其中∈0是真空电容率。当前，已知的具有铁电特性的材料有数百种之多。在一种典型的铁电材料中，人们可以得到一个因数高达约3∶1的k值变动范围。产生这样的k值变化所需的直流电压取决于被外加以直流控制电压的铁电材料的尺寸大小。因为铁电材料的介电常数可变，而电容器的电容值取决于电容器导体附近电介质的介电常数值，所以人们可以使用铁电材料制造可调电容器。典型地，可调的铁电电容器的实现结构形式是平行板(叠层)电容器、交叉指型电容器(IDC)、或间隙电容器。
在已知的铁电可变电容器中，在靠近电容器的一个导体或两个导体的地方沉积有一层合适的铁电材料，如钛酸锶钡BaxSr1-xTiO3(BSTO)。电容值的改变取决于施加到铁电材料上的电场强度和所选铁电材料的固有特性。典型地，在铁电膜的居里温度Tc以下，铁电材料处于铁电态并且将呈现滞后响应电场改变的特性。在Tc以上时，铁电材料处于顺电态并且将不呈现滞后特性。因而，人们通常选取那些其Tc低于预期工作温度的铁电材料，以便使铁电材料工作在顺电态，从而避免铁电态的磁滞效应。
但是，传统的铁电可变电容器已经被证实因损耗太大而不适用于对插入损耗敏感的应用(如手机)中。另外，这些器件的性能经常是不可预见的，因此阻碍了对铁电可调谐滤波器的优化设计、构造、以及应用。
因此，本领域中需要一种其调谐范围能够覆盖期望的频率范围、插入损耗小并且带外抑制作用强的改进的可调谐铁电滤波器以及用于设计这种可调谐铁电滤波器的方法。
发明内容
除了其它要求以外，固定调谐带通滤波器必须满足严格的尺寸、插入损耗以及带外抑制要求。如果可调谐滤波器能满足这些要求，则可以用它们替代固定调谐带通滤波器。低阶的或其它更好的可调谐滤波器可用于在需要较高阶固定调谐滤波器调谐的范围内进行调谐。或者说，单个可调谐滤波器可以替代一个以上的固定调谐滤波器。然而，可调谐滤波器需要有可调元件，而可调元件一向都以插入损耗高、不可靠、或者具有其它不良品质而著称。
人们希望得到这样一种可调谐带通滤波器，它相对于固定调谐带通滤波器具有很好的插入损耗特性，并且还满足所需要的抑制特性以及符合其它要求。因此本发明的一个目的就是提供一种可调谐带通滤波器，其结合使用铁电材料用以调谐滤波器，同时保持低插入损耗特性，满足严格的带外抑制要求并且符合其它要求。基于对铁电材料损耗特性的正确认识，就可以通过很好地设计电容器和滤波器以实现上述目的。
本发明的另一个目的是提供一种设计可调谐带通滤波器的方法论。这种方法论量化并最小化了可调铁电电容器中的损耗机理，以便为结合有可调铁电电容器的可调谐带通滤波器选定最佳结构。
这个过程的首要目的是让使用者设计出具有最小化损耗的带通滤波器，该带通滤波器符合或优于其所替代的传统的固定调谐带通滤波器具有的所有其它的电气与机械规范。如果在实际应用中要利用可调谐带通滤波器替代固定调谐带通滤波器的话，则关键在于前者要符合或优于后者的性能规范。
如果希望实现能够同时满足严格的抑制规范的最小化损耗可调谐BPF，则必须遵循执行正确的铁电膜表征连同可调谐带通滤波器的优化设计步骤。
根据本发明的一个实施例所述，它提供了一种方法，用于为可调谐带通滤波器选择带宽与滤波器阶数以便满足带外抑制要求和通带插入损耗要求。如果给出铁电电容器的拓扑结构，则该方法可计算出该铁电电容器的非铁电损耗。如果给出具有第一品质因子的谐振器以与铁电电容器相耦合，则该方法可根据计算得到的非铁电损耗和第一品质因子而确定出铁电电容器的所需铁电损耗，从而满足可调谐带通滤波器的插入损耗要求。
根据本发明的另一个实施例所述，它描述说明了这样一种方法，藉此方法可以有效而准确地表征出各种各样的铁电膜。
在下面的说明书中将结合附图对本发明的其它方面与特征进行详细说明。
附图的简要说明
图1a是铁电间隙电容器的平面图。
图1b是图1a所示铁电间隙电容器沿着线A所做的剖面图。
图2a是铁电叠层电容器连同附随的隔直流电容器的平面图。
图2b是图2a所示叠层电容器中的第一金属层的平面图。
图2c是图2a所示叠层电容器沿着图2a中线B所做的剖面图。
图3示出了图2a中区域C的放大视图。
图4是铁电交叉指型电容器的平面图。
图5是耦合到可调铁电电容器的谐振器的示意图。
图6是单极可调谐滤波器的示意图。
图7是图6所示单极可调谐滤波器的平面电路实施例。
图8a是具有一个被配置成能够补偿由调谐引致的频率响应失真的铁电电容器的双极可调谐滤波器的示意图。
图8b是具有两个被配置成能够补偿由调谐引致的频率响应失真的铁电电容器的双极可调谐滤波器的示意图。
图9是分压器网络和直流电压源的示意图，直流电压源用于调谐图8b所示能够补偿由调谐引致的频率响应失真的两个铁电电容器。
图10示出了图9所示分压器网络的一个具体实施例。
图11a是图8a所示可调谐滤波器的平面图。
图11b是图11a所示可调谐滤波器沿着线D所做的剖面图。
不同附图中相同的附图参考标记代表了近似或相同的项目。
本发明的详细说明
在应用于例如像通信系统那样的电子信号处理系统中的可调谐带通滤波器(BPF)的设计过程中，可调谐带通滤波器通常必须符合或优于固定调谐带通滤波器的带外抑制、通带插入损耗(I.L.)两项要求以及尺寸、重量及其它机械、环境与电学方面的要求。而且，任意这类设计只要其目的在于大量生产制品，则就必须是可制造的和可重复的，具有一致的个体性能，并且在原地检验时只需要最小化的(且优选的是没有)附加调谐量。
因而，为了使可调谐BPF替换固定调谐BPF在商业上可行，在大多数的或所有的电气性能与机械性能要求方面，可调谐BPF的性能都应当优于其所替代的固定调谐BPF的性能。在要求很高的应用(如无线手机)中，通带I.L.必须被减低到最小程度以防止给手机中其它元器件带来很大的负担。假如可调谐BPF具有的I.L.大于其所替代的固定调谐BPF的I.L，则增加的I.L.可能给整个系统性能带来太大的负担。
限定说明“通带”的许多定义都是可行的。通带一般是由带通滤波器响应降落至中频带或频带中心处的插入损耗(I.L0.)之下3.0dB处的点来定义的。但是，任意固定滤波器的响应都可以用来定义通带。高阶的(更多谐振器的)带通滤波器典型地需要符合特定的带外抑制要求。但是，增大滤波器阶数将导致I.L0.增大。下式给出了滤波器阶数、拓扑结构以及I.L0.之间有用的基本关系：
I . L 0 . = ( 4.34 * Q 1 / Q u ) * Σ i = 1 N g i - - - ( 1 )
其中N是滤波器阶数，
Qu是所用谐振器在无负载情况下的Q，
Q1＝f0/BW(BW是3dB通带，而f0则是中频带的频率)，并且
gi是给定拓扑结构的滤波器元件值(切比雪夫滤波器与巴特沃兹滤波器对比)(Chebyshev vs.Butterworth)。
通常，切比雪夫响应是优选的，因为对于给定的滤波器阶数来说，切比雪夫响应给出的抑制响应比巴特沃兹滤波器给出的抑制响应更加急剧。另外，增加切比雪夫BPF中的纹波(ripple)，将增大其带外抑制。由公式(1)可知，对于给定的滤波器阶数N来说，通带越大将导致I.L0.越小，这是因为当BW增大时Q1将减小。减小I.L0.的代价是选择性减低了。为了重新恢复选择性，则必须增大滤波器阶数N，相应代价是I.L0.。带通滤波器设计领域的普通技术人员会意识到，公式(1)表示出了为满足给定系统需要和滤波器阶数所能做的最好事情。使用较高阶数的滤波器(更多个给定无负载Q的滤波器)会快速增加I.L0.，因为gi值在量值上越来越大，即使有更多的gi值要累加(增加的N)。注意，公式(1)忽略了实际应用损耗，尤其当接近频带边缘时，其将使I.L0.进一步增大。
由公式(1)可知，使用一阶或二阶带通滤波器可减小I.L0.。对于这些低阶滤波器而言，gi系数的数目(N)将会减少并且gi的量值也将减小。为了有可能得到最小化的I.L0.，可以由损耗最低(Qu最大)的谐振器构造这些低阶滤波器。对于给定的谐振器尺寸和类型(即给定Qu)来说，最终所得到的一阶或二阶带通滤波器的I.L0.将总是小于设计具有较高阶数的固定调谐带通滤波器的I.L0.。这种可调谐能力允许用低阶窄带BPF替代较宽频带的固定调谐BPF。可调谐窄带低阶BPF可以克服带宽较窄的局限而覆盖整个的感兴趣频带。这是基于所期望的信道(信息)带宽与整个系统带宽相比较窄的假设。
用可调谐BPF替代固定调谐BPF的最佳情形是，固定调谐的BPF覆盖的系统带宽大于单个信道发送或接受所需要的带宽要求。例如，工作在美国CDMA PCS频带的手机中的固定调谐BPF覆盖了这样一个BW。可以理解，对于美国的蜂窝CDMA以及许多其它标准而言也都是如此。这里教导的技术、方法与装置还可以应用于美国CDMA PCS之外的许多标准。美国CDMA PCS只是作为一个例子被讨论罢了。
在美国PCS的全频带中，60MHz被分配用于Tx(1850-1910MHz)，并且60MHz被分配用于Rx(1930-1990MHz)，以用于全频带操作。CDMA标准是一种全双工系统，即，手机必须同时进行发送和接收。为了实现这一目标，就需要用双工器滤波器以分割频带且避免干扰。虽然PCS频带宽度为60MHz，但单个的CDMA信道的宽度只有1.25MHz。但是，当前的系统架构迫使CDMA PCS带通滤波器和多路复用器(包含双工器)具有BW≥60MHz，因为该系统必须在任意60MHz的频宽区域内允许并且容纳任意的1.25MHz信道的操作。
通过满足最坏情况抑制规范同时提供具有占用物理面积较小的简单拓扑结构的低阶BPF，可调谐PCS频带滤波器就可以改变这种情况。由于公式(1)的原因，这种低阶滤波器应具有较低的I.L0.。在某些部分频带工作的情形下，需要覆盖频带宽度小于60MHz。在这些情形中，可调谐带通滤波器将具有等同的好处。
为了有效地利用低阶可调谐BPF替代高阶固定调谐BPF，应当考虑三个因素。第一，低阶BPF的分数带宽(fractional bandwidth)(即Q1)和选择的拓扑结构必须满足最坏情形下的抑制规范。因为Q1＝f0/BW，当3dB带宽(BW)减小时，I.L.增大。因此，如果BW与f0相比太小，则最终得到的BPF将具有很高的I.L.，不能被接受，所以就需要在BW与I.L之间寻求折衷。对于实际设计而言，低阶可调谐BPF应当具有尽可能最低的I.L.，并且要满足最坏情况所需的抑制要求。一些拓扑结构是优选的，它们天然地具有低侧(低于发射频带)零点或高侧(高于发射频带)零点。
诸如图8a所示的拓扑结构，其中谐振器404与408在它们的整个长度上以电磁方式相互耦合，是这样一种拓扑结构。其产生的高侧或低侧零点由电容器432的电容而定。这种零点允许使用较宽的BW以及较低纹波(导致产生较少数目的g1值)的BPF拓扑结构，因此提供较低的I.L.0，由公式(1)可知。
第二，低阶可调谐滤波器必须能调谐以覆盖整个BW，就像使用固定调谐的滤波器那样。总之，在低阶可调谐滤波器中使用的可调电容器具有的损耗应当足够小，以使得到的滤波器所具有的I.L符合或优于规范。尽管与较高阶数(N>2)的固定调谐带通滤波器设计相比，可调谐的一阶或二阶带通滤波器将能具有最小化的附加损耗，但是可调元件(可变的铁电电容器)必须具有快速调谐机理并且能够利用有效的调谐电压来调谐以覆盖整个带通范围。
无论是否可调谐，电容器的总损耗Lt都由其消耗能量与存储能量的比值给出，其中能量是存储在电场中而消耗在电阻上的，即Lt＝(消耗能量)/(存储能量)。总损耗Lt的倒数就是品质因数，即，Q＝1/Lt。
对于一个电容器，Lt在数值上等于(ω*Rs*C)，其中ω是角频率，Rs是电容器的总串联电阻，而C是电容值。Q的这一定义对于下述频率而言是正确有效的，所述频率小于由任意真实电容器都具有的寄生电感的电抗引致的自谐振频率，并且大于Rp有效地分流C即电容电抗远远小于Rp阻抗的频率。因此，Q与(ω*Rs*C)成反比。例如，增大(或减小)C、ω与Rs中任意量的值，保持其它因子为恒定不变，则Q相应地减小(或增大)。或者，保持Q恒定不变，如果减小(或增大)C、ω与Rs中任意一个量的值，则其它两个量的乘积必定要相应地增大(或减小)。
通过下式可以看出确定谐振电路中的铁电电容器所给出的总损耗的重要性：Lc＝1/Qc而1/QT＝1/Qc+1/Qu，其中，
Lc＝电容器的损耗；
QT＝铁电电容器和所结合的谐振器或电感器的总Q；
Qc＝电容器的Q；而
Qu＝无负载的谐振器的Q，或者是用于构成平行谐振电路的电感器的Q。
当Qc增大时，其对QT的影响将越来越小。假如Qc无限大，则将不会对QT产生影响。实际应用时，假使Qc近似等于10*Qu则就可认为不会对QT产生影响。反之亦然。当Qu相比于Qc变得越来越大时，Qu对QT产生的影响将越来越小。在两种情形中，理想的是能够得到最高的实际可行的Qc。
例如，在PCS频带，对于1pF的可调谐电容器而言若想在2.0GHz处得到Qc＝250，则需要Rs为0.32Ω(欧姆)。这里假设在2.0GHz处用于分流C的并联电阻Rp远远大于电容器的阻抗Zc(例如，这里Rp>约1.6kΩ，而Zc的绝对值＝0.0126Ω)，且假设电容器的自谐振频率高于2.0GHz，因此串联电感可以忽略不计。为了最小化损耗(得到一个小的Rs)，则需要估计当前存在的全部损耗机理并且如有可能应设法消除这些损耗机理。
对于铁电器件，通过累加各种来源的损耗得到总损耗，如下所示：
Lt＝Lgeom+Lattach+Lmetal+Lsub+Lrad+Lmeas+Lf-e；
其中Lgeom是由电容器的拓扑结构引起的，
Lattach是由器件连接引起的损耗，
Lmetal是总金属损耗，
Lsub是基底损耗(如果有的话)，
Lrad是辐射损耗，包含所期望的和非所期望的两部分，
Lmeas是由测量误差引起的总损耗，而
Lf-e是铁电损耗角正切。
这种损耗分配首先可以用于通过使用铁电电容器的方法而获取在所期望工作频率处的Lf-e(或铁电tanδ)精确值。为了精确导出Lf-e，必须消除或抑制上述的所有其它损耗贡献来源。例如，Lgeom值依据拓扑结构的不同而变化，叠层电容器的最好，间隙电容器的较差，而交叉指型电容器的则更差。尽管可以减少与控制这种损耗，但它是器件所固有的一种损耗。因此，为特定的铁电电容器选择的拓扑结构将会影响到该铁电电容器可能达到的最佳Qc值。假定铁电膜是无损耗的，则由电磁(EM)软件可以构建出所期望的几何结构的基线损耗。这种基线损耗代表了给定几何结构的最佳(最低)损耗。
通常，间隙电容器最容易制造。制造IDC的容易度次之，而在这三种电容里叠层电容器的制造最难。与IDC相比，间隙电容器具有较好的Q特性但是其每单位截面积(图1a中的W)的电容值较低。IDC的电容较大，这是因为在每单位截面积上设置使用了许多个指状部分的缘故。但是，对于许多通信滤波器应用而言，并不需要大电容(C≥4.0pF)。因此，通常用间隙电容器就可以提供足够的电容。大多数铁电膜固有的k值很高，这有助于提供与传统间隙电容器相比较高的单位截面积(W)的电容。
Lattach是由分立器件的连接方法引起的，例如其包括焊接、银粉漆(silver paint)、或引线接合(wire bonding)。这些连接损耗可能会很大并且不可预知。用铁电电容器直接制造谐振器或其它射频电路可实现损耗最小，因此即使不能消除这种损耗元件，也可以使损耗最小化。
单个独立的铁电电容器的固有损耗的影响很小。具有较大影响的是那些将铁电电容器连接到电路上的连接方法引致的附加损耗。即使铁电电容器是无损耗的，但可能因使用了大损耗的连接方式，而整体上体现为有损耗的铁电器件。例如，假设期望1.0pF电容在2.0GHz处Q≥250，则总串联电阻Rs必须≤0.32欧姆。因此任何附加损耗都将会进一步减小这个电容器的Q值。这种附加损耗是否来源于实际电容器之外是无关紧要的。甚至无法避免的损耗机理，例如像由安装引起的那类情形，由于其对系统有影响因而也会使得电容器的Q值减小。
为了使附加损耗最小化，应当使铁电膜和谐振器之间的连接具有最小的附加电阻。这样，与铁电膜有关的电流、电荷将遭遇的附加损耗最小。传统的接合或安装技术，诸如(但不局限于)焊接、引线接合或银粉漆或粘贴，不提供这种低损耗、可控制接合的特性要求。
因使用了这些接合方法而引起的附加的、不可预知的损耗降低了所实现的Q，而无论铁电电容器是否用于谐振器调谐的目的或者用于表征铁电膜。因此，为了获得最佳性能(损耗最小)，应当将铁电电容器的结构直接地制造到用于调谐的谐振器上或者与用于调谐的谐振器一起制造，或者制造到其它基本射频电路上。只有通过直接制造，电磁(EM)源(电流)由铁电调谐元件到谐振器的转移才可以损耗最小。通过减少锐角转角或急剧变化可以增强直接地制造到谐振器上或者与谐振器一起制造的铁电电容器的所需效果。
Lmetal的因子包括金属的表面粗糙度(SR)、金属厚度与趋肤深度δs之比，以及电导率。设若工作频率在L与S波段(1-4GHz)则SR的均方根值(rms)小于约10微英寸就可以有效消除SR因子的影响。设若金属厚度大于等于1.5δs，就可以减小金属厚度因子的影响；或者设若金属厚度≥5δs，就可以有效地消除金属厚度因子的影响。对电极接头来说，金属厚度(tm)近似等于1.5δs。对于电磁谐振器的情形，由于其中必须支持行波或驻波，即，承受行波或驻波的金属的延长值相当于波长值的一部分(约10％或更多)，所以金属厚度应当近似约为5δs或更大。
银、铜和金(分别为Ag、Cu和Au)的电导率特性很好。因此，可以减小或控制Lmetal，但不能消除Lmetal因子影响。但是，可以通过本领域普通技术人员公知的公式计算出电导率的作用效应，或者通过使用应用于通常使用的电路仿真器中的线性计算器工具，诸如Eagleware或Touchstone，计算出电导率的作用效应。而且，精确的制造控制可以将Lmetal中的几何变化量限定在特定的范围内。
通过选择在感兴趣的工作频率上损耗角正切小于0.001，且优选地小于0.0005，的低损耗衬底可以将Lsub代表的损耗贡献作用减小到最小程度。合适的材料包括纯度>99％的铝，目前这是损耗费用比的最佳选择。蓝宝石或MgO优于铝，因为它们具有更低的损耗角正切，但是它们更加昂贵。所有这些材料将能接纳多种铁电薄膜而不需要过渡层，并且具有可以接受认可的表面粗糙度，几乎不需要进一步的打磨抛光。半导体衬底是较差的选择，因为它们具有相对较高的电导率。除了损耗角正切、表面粗糙度和价格因素之外，合适的衬底应当是不易破碎的，可以制造足够大面积的晶片，并且可以很容易地被金属化而无需大范围的预处理。
通过使用EM场或电路仿真软件，可以成功地将Lsub从复合衬底(铁电膜加衬底)的总损耗中区分出来。例如，可以使用Sonnet、Momentum、或IE3D。因此，可以显著减小Lsub并且精确计算出Lsub。
通过适当屏蔽和设计可以消除Lrad，因此Lrad不是典型的通常要考虑的损耗因子。应当注意，各种各样的过滤器，尤其是诸如结合线(combline)式或发夹式那样的平面型过滤器，依靠辐射耦合以实现它们所期望的特性。在这些情形中，应当保证即使不能消除也要减小不希望要的、散射的耦合。
Lmeas可以显著增加电路的损耗误差，这是因为小的、附加的损耗使待测器件(DUT)或系统的测得Q值显著减小，从而偏离了DUT固有的Q值。测量材料的介电常数与损耗角正切的传统方法是本领域普通技术人员众所周知的空腔扰动技术。但是，在L-波带，空腔的尺寸大小变得相当大。当表征具有≤1.5μm膜厚的薄膜(与块相对)如铁电膜时，测量误差很大因此问题变得非常尖锐。而且，应当按照最接近于其适用的方式来表征铁电电容器(或滤波器)。因此，表征铁电化合物或铁电膜的优选途径是采用微带谐振器技术。
为了确定铁电膜的特性并且表征铁电电容器，优选地使用微带技术，例如带状线或者其它用于表征铁电膜的体积测定技术，其理由如下：
1)微带电路是不带有顶覆盖层的平面系统，因此不需要结合硬质衬底作为顶覆盖层。所以也就不需要例如在带状线中所需的接地板(从顶部到底部)的连续性。
2)使优选的间隙电容器或作为备选的交叉指型电容器的制造与检测变得更加容易。
3)现有的表征微带谐振器的技术方法有很多。
4)不需要复杂的固定或制造或两者都不需要，而这些则是例如介电腔所需要的。
可以利用谐振器技术测量高Q电路，因为宽带测量可能无法精确地以一定精度解决在射频/微波频段的子欧姆(sub-ohm)电阻损耗问题。由于同样的理由，LRC计不是一个好的选择。
由于低频测量，尤其是那些低于约10-100MHz的频率测量，是由分流所述电容器的大阻值并联电阻Rp主导的，因此需要在射频区段进行测量以正确地为铁电电容器获取Rs以及相应的Q。Rp的主导作用，连同相对较小的所讨论电容器的电容值(≤4.0-5.0pF)都会妨害低频区段的可靠Q(且因此Rs)测量。
当用于测量损耗时，晶片探针台必须谨慎使用，因为晶片探针台难以校准去除在射频/微波频段的电阻性与电感性损耗。探针顶尖及其接地连接对DUT上的位置以及施加到DUT上的压力也非常敏感。因此，最好使用能够直接测量所要各种参数的谐振测试电路，而不必进行单独的器件损耗测量。
因此，为了测量谐振电路，优选使用网络分析仪。为了将测量损耗减低到最小程度从而获取最精确的测量，应当校准去除DUT的损耗，对网络分析仪执行一个全两端校准，并且在校准和测量中使用求平均值算法。最后，需要对测量数据进行正确分析以析取被测电容器的Q或损耗，例如“Data Reduction Method for Q Measurements of Strip-LineResonators”，IEEE Transactions in MTT，S.Toncich and R.E.Collin，Vol.40，No.9，Sept.1992，pp.1833-1836(S.Toncich和R.E.Collin的“用于带状线谐振器Q值测量的数据处理方法”，MTT中的IEEE学报，第40卷，第9期，1992年9月，第1833-1836页)论文中概要所述，该论文在此通过引用而包含在本文内。
利用上述讨论结果对前述各种损耗进行最小化、消除或限制之后，则总损耗可重新表达为：
Lt＝Lgeom+Lmetal+Lf-e+ΔLmisc
如上所论，通过分析可以量化、去除Lgeom和Lmetal从而得到Lf-e的精确测量值。基于铁电材料无损耗的假设，对电路进行精确的电磁仿真就可以确定Lgeom。设定电导率、表面粗糙度SR(如果适用)与趋肤深度，则就可以根据金属损耗公式确定Lmetal。最后一项ΔLmisc表示对Lgeom和Lmetal或二者进行限定抑制或不彻底清除后仍不能完全去除的其它损耗机理的组合项。它表示了不能缩减的误差项。为了精确检测铁电膜/元件的特性，应当将其最小化并局限在一定界限内，如前面部分所记述的那样。
最后，为了将Lf-e的影响减低到最小程度，则必须选择性地仅将铁电膜沉积形成在调谐所需要的区域，除此之外不沉积铁电膜。
处理所有损耗机理和消除或限定这些损耗的方法不仅可以对铁电损耗进行测定，而且还可以建立正确的设计指南以用于低损耗可调谐滤波器。对Lf-e的认知使设计者可为各种类型采用铁电膜的优化设计提供必要的铁电膜基线。例如，这种认知对于有效地折中损耗角正切以换取可调谐性是必要的。简而言之，精确的制造与测量方法可使得铁电膜损耗特性一致、应用一致。
已知上述技术用于使损耗最小化，现在讨论三种类型的铁电电容器的优选实施例。应当明白，尽管这些设计是用于L频带(1-2GHz)，但是由本发明给出的技术教导可以用于设计工作于其它频带的铁电电容器。
图1a与lb所示的优选的铁电可调谐间隙电容器10工作于无线手机使用的蜂窝频带(800-1000MHz)和L-频带(1-2GHz)。间隙电容器10优选地形成于纯度≥99％、厚度为0.5-1.0mm的铝、MgO、或者蓝宝石衬底12上，其具有的S.R.小于5.0微英寸RMS。可选地，间隙电容器可以直接被构图形成在任意数目的谐振器结构的前面或后面或侧壁上。其例子是同轴的、整块的或带状线的谐振器。构造这样一种电容器时应当尽量使其电连接点靠近谐振器。
依据其它需求，衬底12可以具有一个金属接地平面14。但是，为了将寄生电容减低到最小程度，优选实施例是没有接地平面的。优选地，为了使电容以及调谐范围最大化，铁电层16是由厚度约0.1-2.0微米的BSTO或者其它合适的或理想的铁电材料沉积在衬底12上形成的。更优选地，铁电层16的厚度约为0.5-1.0微米。通过与其它成分掺杂、组成合金或者混合和/或退火的Ba/Sr分数，可以得到所需的调谐特性和损耗(tanδ)，以及因此得到的Q值。
通常，调谐特性优选满足最小调谐电压的最小必需调谐范围的要求。不论掺杂何种其它元素以及是进行前处理退火或是后处理退火，优选地，BaxSr1-xTiO3化合物中x＝0.5，工作在室温下。显然除了BSTO之外还可以使用其它种类的铁电材料。金属层18形成在铁电层16上，它定义出了间隙20，间隙的宽度优选为3.0-5.0微米。优选地，金属层18厚度为0.5-6.0微米。更优选地，金属层18厚度为1.5-2.5微米。显然根据实际需要与加工设备的实际情形，间隙20可以比这个范围更宽或更窄些。为了最小化PCS频带中的附加损耗，最终得到的电容值在0伏特直流电压作用下近似为0.6pF-1.5pF，而对于蜂窝CDMA频带这个值近似为1.0pF-3.0pF。基于所使用的特定铁电膜以及所需的间隙20，电容器的宽度W17将进一步确定铁电电容值。该宽度典型地为.25mm-2.0mm。电容值典型地为0.6pF-3.0pF。为了满足最坏情形下CDMA PCS频带BPF损耗的规范，最终得到的电容器在2.0GHz处的Q值应当至少为160。
为了将由铁电膜引起的附加损耗减小到最小程度，必须有选择地进行沉积，即只在如上所述需要调谐的地方沉积形成铁电膜，而不在其它地方沉积形成铁电膜。例如，在图1a的间隙电容器20中，可以在如图1a所示的间隙20周围的狭窄区域Df-e中沉积形成所需的铁电膜16。Df-e应当足够大以确保间隙20在制造过程中可以重复构图形成在铁电膜之上(允许掩模的调整容限)，并且出于调谐的目的，Df-e应当足够大以覆盖间隙20之下的必要区域。对于L-频带PCS滤波器，Df-e＝0.2-0.5mm就已足够并且优选地等于0.2mm。若增大工作频率，则可以减小Df-e。若减小工作频率，则可以增大Df-e。
铁电膜的属性与构造对于整个电容器损耗起着至关重要的作用。已知有很多种减小与最小化铁电膜损耗的技术方法。铁电膜的一个特点在于，铁电膜损耗与可调谐性通常呈现反比关系。即，通常必须对它们两者进行折中。铁电的k调谐范围越大，则在多数情况下铁电损耗也越大。
因此，尽管铁电材料的k调谐变化范围可以达到约3∶1，但对于特定的滤波器应用而言较小的调谐变化量也是可以接受的。在该情况下，若选择较小的调谐变化量，则损耗也较小。例如，在美国的PCS CDMA频带中，发射频带的调谐需求是从1850MHz到1910MHz或者约4％。因此，铁电材料可以具有显著小于3∶1的可调谐特性。
例如，铁电间隙电容器在0V直流偏压下电容为0.6pF，需要调谐33％，(从0.6pF下调到0.4pF)以调谐覆盖PCS发射频带。实际调谐范围取决于BPF的拓扑结构以及BPF所需的调谐占用频带。在本实施例中，提供33％调谐需要的调谐电压取决于铁电电容器的几何结构和铁电膜特性，几何结构特性包含铁电膜厚度。
频率可调谐性的k可调谐性效应是由滤波器拓扑结构决定的。这种效应还必须考虑对铁电材料的选择。只有精确表征铁电损耗与铁电k可调谐性的折中，设计者才能选择出最佳化的铁电材料。精确表征这种折中使得设计者能够选择出最佳的铁电材料(具有最小的损耗同时满足调谐要求)。
关于间隙电容器的Lgeom，导致损耗的主要原因在于间隙形成的四角。通过使这四角变圆可以减小这些损耗。
与间隙电容器和交叉指型电容器相比，叠层电容器具有的Lgeom最小。叠层电容器类似于平行板电容器的几何结构，但其中板尺寸(长度和宽度)远远大于板间距。给定这样一种几何结构，板之间形成的电场除了边缘处出现边缘现象之外大部分是均匀的。通过使用保护频带可以显著地减小边缘效应，如本领域普通技术人员所公知的那样。因此，平行板电容器的几何损耗非常小。此外，平行板几何结构可以提供大电容并且提供了由控制电压的小幅度变化实现大幅度调谐。
优选的叠层电容器30如图2a、2b、2c与图3所示，其将Lgeom的损耗贡献减低到了最小程度。电容器30直接沉积在25mil(毫英寸)厚的铝衬底31上。第一金属层34接合在衬底31上。金属层31的形状如图2b所示。铁电层36覆盖在金属层34上。为了构成叠层电容器30，在铁电层36上形成的金属衬垫(pad)40覆盖了第一金属层34的一部分。图3显示了该叠层区域的放大视图。金属衬垫40和金属层34都具有一个锥形区域，其构成具有适当电容值的叠层电容器30。另一个金属衬垫41覆盖金属层34以构成隔直流电容器42。金属衬垫41是锥形的，以构成具有适当电容值的隔直流电容器42。
由于使用的铁电膜大都具有很高的介电常数(k)，所以叠层电容器30在面积上可能非常小而尽管如此却可以提供1.5pF电容(Cf-e)。接合的偏压衬垫44被提供用于连接具有很高值(500-1000kΩ)的片状电阻器。注意铁电膜不仅沉积分布在叠层电容器30之下而且还沉积分布在隔直流电容器42之下。但是，若CDC≥180pF且Cf-e≤1.5pF，则即使在最大值VDC偏压(优选为10VDC)作用下，对隔直流电容器42的电容(CDC)的作用影响仍可以忽略不计。这是因为隔直流电容器具有的电容足够大，甚至当电容在铁电调谐作用下被减小时，对Cf-e的作用影响仍是最小的。
在这样一个实施例中，0.7pF≤Cf-e≤1.5pF，铁电k近似为1000，构成叠层电容器30的金属衬垫40的叠层区域大致为7.0μm×7.0μm，而铁电膜厚度大约为1.0μm。金属层34可以是Pt的并且具有的厚度≤0.5μm。金属衬垫40与41可以是Ag的并且具有的厚度大约为1.5-2.5μm。
叠层电容器的Lgeom小于间隙电容器的，而叠层电容器的Lf-e则较大，因为所有的射频场都集中在铁电膜上。在间隙电容器中，射频场部分在空气中，部分在铁电膜中还有一部分在衬底中。同理，对于特定的外加电压，叠层电容器具有与间隙电容器相比较大的电容可调谐性。
对于一个给定的截面区域，IDC可以提供与间隙电容器相比较大的电容。但是，它的损耗较大，对Lgeom的主要贡献包括间隙间隔；随着间隙间隔减小损耗逐渐增大。类似地，随着指状部分宽度减小损耗逐渐增大。指状部分长度也会影响损耗，随着指状部分长度增大损耗逐渐增大；尤其在采用微带(最常见的)技术实现的IDC中，在这种结构配置中奇模损耗占优势。另外，由于附加的锐角转角引致损耗，因此损耗随着指状部分的数目的增大而增大；注意，增大指状部分的数目是增大IDC电容的常用手段。
铁电领域的许多研究者都曾使用具有较窄指宽和间隙(每个都≤5.0μm)的IDC来表征铁电膜的特性。但这是有问题的，因为这种IDC结构带来了较高的Lgeom且因此导致其自身的Q值较低。  典型地，即使不带有任何Lf-e，在2.0GHz处约1.0pF对应的Q≤100。这使得Lf-e的测定变得非常困难。应用如上所述的宽带测量技术，将进一步增大任何Lf-e的测定难度。
图4所示的优选的IDC电容器60将对Lgeom的贡献减低到了最小程度。该电容器形成在99％的铝、MgO、蓝宝石或者其它的适当材料的衬底62上，衬底62的厚度约为0.2-1.5mm。铁电层64形成在衬底62上。输入端口66和输出端口68耦合到IDC电容器60。金属层70厚度为1.5-3.0微米并沉积在铁电层64上，金属层70形成了间隙间隔72，间隔大约为5.0微米，指状部分宽度70大约为150微米，或者更多。
现在我们来说明构造可调谐带通滤波器的常规方法。第一步，设计者必须对可调谐滤波器的3dB带宽和滤波器阶数进行折中以达到所需的带外抑制要求。众所周知，随着滤波器阶数的增大，滤波器的衰减(rolloff)速度也随之增大，因此滤波器很容易实现所需的抑制规范。衰减开始于定义出3dB带宽(BW)的3dB点处。因此，随着BW的减小，则达到所需的抑制规范也就变得很容易了。
为了使损耗最小化，最低阶数的滤波器是理想的。典型地，滤波器是二阶BPF。低阶BPF的优点还在于，其易于制造和调谐，并且使用了较少的可调谐谐振器。
切比雪夫型BPF与巴特沃兹型相比是优选的，因为它给了设计者折中通带纹波和带外抑制的灵活性。设计者应当着重解决通过带宽调整来满足最坏情况的抑制规范问题，没有额外的传输零点增加到传输零点，避免增大滤波器的复杂度、费用以及相应的通带边缘损耗。但是，也可以通过开发研究自然具有高侧或低侧传输零点的拓扑结构来解决最坏情况的抑制规范问题。
但是，将BW设定的太窄，则如上所述将使得插入损耗增大。因此，可选择的最窄BW应当满足在所有特定工作条件下必需的抑制规范。假如选定的BW带来了不可接受的插入损耗，则应当增大BW，也许会需要增大滤波器阶数或者增大通带纹波(在允许范围内)。如有必要可以加上附加的高侧或低侧传输零点。
可调谐BPF需要控制电路。与不需要控制电路的固定调谐BPF’s相比，控制电路增加了一块费用。因此，与固定调谐BPF相比，所期望的可调谐滤波器设计应当具有相比较低的插入损耗、较小的尺寸或其它优点，同时还能满足抑制规范，这样才能抵偿上述费用增加。为了实现较小的插入损耗和较小的尺寸，优选地使用不超过一阶或二阶的可调谐滤波器。但是，显然本发明的原理可被极为有利地应用到设计任意阶数的可调谐铁电滤波器上。
如果给定滤波器阶数的选择和满足抑制要求的BW，则所使用的谐振器具有的最大可能的Qu符合或优于必需的I.L.以及特定的尺寸和高度限制要求。为了定义Qu，应为图5所示的基级(basic stage)100选择拓扑布局。每个基级100都是由谐振器102耦合连接铁电电容器104而构成的。可以将铁电电容器104的类型假定为这里所述的种种型式中的一种。所示的谐振器102是一个接地的四分之一波长谐振器，但也可以使用开路的二分之一波长谐振器。另外，谐振器也可以具有其它合适的电长度。
基级100可被理解为可调谐的EM谐振器。铁电电容器104与谐振器102之间既可以串联耦合也可以并联耦合，这由它们的连接特性确定。如图6所示，铁电电容器104与谐振器102并联耦合，因此铁电电容器104的Qf-e影响了固定调谐的EM谐振器102的Q。容量谐振器(例如，同轴谐振器、带状线谐振器或整体(monoblock)谐振器)是优选的，因为与平面谐振器即微带谐振器或共平面形波导(CPW)谐振器相比，它们具有最高的Qu和最小的面积与高度，价格被减低到了最小程度。
究竟可调电容器与容量谐振器是以串联方式还是以并联方式配置通常是由实际连接情况确定的；有时只能采用一种配置方式。在确定采用串联方式还是并联方式配置可调电容器时，另一个需要重点考虑的是使附加损耗最小化，并且为了使延伸长度减短而最小化调谐范围。并联连接典型地将产生与串联相比体积更加紧凑致密的可调谐滤波器。其通常易于实现。在电磁耦合谐振器(例如整体谐振器、同轴谐振器、或带状线谐振器)沿其整个延伸长度耦合(而不是通过小孔耦合)的条件下，串联可以提供更好的调谐效果。从制造角度考虑，串联在这些情况下是一种更自然的选择。
如上所论，如果铁电电容器104不与谐振器102或其它射频电路集成为一个整体，则连接损耗可能非常大。一旦选定了铁电电容器104的拓扑结构，铁电电容器104的Qc就可以依照前面论述的方法推导得出。由此通过1/QT＝1/Qc+1/Qu可以得到整个基级100的QT，
其中Qu是谐振器102的无负载Q；
Qc则是铁电电容器的Q。
在给定基级100的QT后，设计者可以利用公式(1)来确定是否能够符合或优于必需的I.L.要求。如果I.L.太大，则设计者可以通过增大Qc或Qu或同时增大两者而得到较小的I.L.。如果将Qc或Qu增大到了不能再大的地步，则它们将对QT形成极限限制。此时只有通过切换到一个较低损耗的拓扑结构上才能进一步减小I.L.0。例如，对于给定覆盖表面(面积)，使用容量谐振器取代微带谐振器将可增大Qu。
对于大容量应用，诸如CDMA无线手机，横向电磁(TEM)波容量谐振器是优选的。这类容量谐振器可以是陶瓷负载的同轴谐振器、板状线(整体)谐振器或带状线谐振器，列述的是三种最常见的实施例。利用与同轴谐振器或带状谐振器一起构造的顶部电容耦合(TCC)的BPF，可以实现标准窄带(典型地定义为BW≤f0的10％)拓扑结构。如图8所示的TCC拓扑结构，适于并联铁电调谐，因为这样做提供了最致密紧凑的实现(与串联铁电调谐的TCC拓扑结构相比具有较小的覆盖面积)。因为接地的四分之一波长谐振器起到了接近谐振的平行LC调谐电路的作用，所以在并联旁路上设置铁电调谐电容器是有利的。
也可以使用实现分级阻抗的整体BPF。利用整体BPF设计的直接结果就是，整体谐振器典型地沿着它们的整个长度进行电磁耦合。整体BPF适合于串联铁电调谐。通过铁电调谐电容器的选择性沉积和构图设计，可以改变整体BPF的电长度。也可以使用非TEM谐振器，包括但不限于，介电加载的波导谐振器或介电压轮(pucks)(有或没有屏蔽罩的)。
但是，若要求很高则可能对容量谐振器可达到的Qu值产生限制。在这样限制要求很高的系统中，可以使用带状线谐振器替代容量同轴谐振器。这里，可以通过将中心导体设置得更宽些(直到一个限点)而在保持总高度固定不变前提下提高Qu。这个实施例进一步的优点在于，通过使带状线谐振器顶覆盖层终止于铁电电容器位置之前，可以有效实现对平面的铁电电容器诸如间隙电容器或IDC的结合应用。通过这种方式，在形成带状线谐振器底覆盖层的衬底的延伸超出顶覆盖层的这一部分上形成平面铁电电容器。
可在如图11a所示的“基座(pedestal)”上优化设计集成铁电电容器，以形成采用例如同轴谐振器的TCC结构。铁电电容器被集成为如图11a所示基座上输入、输出电容器315a、315b的延伸部分。另一种做法是，可以在同轴或整体谐振器的开口端/面(未示出)上构图并制造铁电电容器。
不管要制造的谐振器的具体结构型式如何，只要高度限制有碍于进一步提高该谐振器的Qu，则不得不转用它法以提高Qc，例如，用间隙铁电电容器或叠层铁电电容器替代IDC铁电电容器。
对于多数应用而言，如图6所示的单阶带通滤波器140就能满足需要。如关于图5所讨论的那样，带通滤波器140包含铁电电容器104和谐振器102。将可变直流电压142外加到铁电电容器104，以调谐带通滤波器140。将需要滤波的射频信号施加到输入端144，并且由输出端146输出。注意输入端144和输出端146是可互换的。电容器143被定义在输入端144与谐振器102之间。另一个电容器145被定义在输出端146与谐振器102之间。铁电电容器104，无论它是间隙电容器、叠层电容器还是IDC电容器，都是按照前述方式进行构造配置的从而使损耗最小化。类似地，谐振器102可以是短路的1/4波长谐振器或是开路的1/2波长谐振器，选择谐振器102的类型因此使得Qu最大化。
覆盖面积较小且费用较低的容量谐振器，如同轴谐振器、介电加载的波导谐振器、整体谐振器、或带状线谐振器，将能提供较高的Qu。可选地，如果技术规范和价格因素限制允许，也可以使用较大面积的平面谐振器，如微带谐振器。大多数微带谐振器电路都是通过在硬质衬底上进行薄膜加工处理而制成的。因此，它们获得的金属厚度与类似同轴谐振器和整体谐振器那样的TEM谐振器相比较小，后者的金属化是通过厚膜加工处理完成的。由于部分电磁场分布在微带之上的空气域中，所以微带谐振器具有较大尺寸。
现在参考图7，其中示出了带通滤波器140的平面实现150。谐振器102由微带线152构成，微带线152通过通路154接地。注意微带线152也可以端接方式连接适当的无损耗接地面(未示出)，这样就避免使用通路154。电容器153和155分别由输入微带线156、输出微带线158以及谐振器微带线152之的间隙构成。期望的是，使电容器155和157的电容值达到实际需要大小(大致0.25pF)，以便使输入与输出耦合最大化同时仍保持平面结构形式。微带线形成在衬底157上，衬底157由纯度为99.5％的铝、MgO、或蓝宝石制成，为了提供最大化的微带谐振器Q值，衬底157优选的厚度大致为1.0mm。铁电电容器104是在衬垫160和微带线152之间形成的间隙电容器，铁电层162位于衬垫160和微带线152之下。
可变直流电压源通过电阻器164给衬垫160施加偏压。隔直流电容器设置在衬垫160和166之间，其中衬垫166包含接地通路168。注意衬垫166也可以端接方式连接适当的无损耗接地面(未示出)，这样就避免使用通路168。
如图7所示，如果并联连接谐振器，则需要隔直流电容器。隔直流电容器的电容值理想地至少为100Cf-e，以便使其对Cf-e的负载影响最小化。在感兴趣的频带中，其Q理想地≥40。显而易见，这里对间隙电容器和微带谐振器的选用是任意的，即，根据本发明的教导，这里讨论过的任意型式的电容器和谐振器都可以选用。
图7的带通滤波器可以理想地用作测试电路，用以表征铁电膜，如这里所描述的那样。如此，图7带通滤波器具有下列优点：
1)尤其当要实现的是间隙电容器或IDC时，可以根据其用途而构造铁电电容器。选择性铁电沉积被采用。
2)尽管显示的是铁电间隙电容器，但也可以使用IDC。间隙电容器几何结构较为简单。其与IDC相比制造较为简单并且几何损耗较小。另外，其与叠层电容器相比较容易制造。
3)由于电路是利用薄膜加工处理技术制造的，所以可以精确控制并测量几何结构。
4)可以用轮廓曲线测定方法(profilometry)精确测量金属厚度。金属类型可以根据需要选择(Au、Ag或Cu)。
5)高Q微带电路完善了电路的固定谐振器部分。
6)铁电电容器直接构造在谐振器中。不存在由焊接、接合等等引致的附加损耗。从谐振器到铁电电容器的过渡是均匀的，或如有必要该过渡可以是锥形变化的。
7)如果使用大面积接地面和Wiltron测试夹具(具有用以保持电路顶面和底面并且使电路顶面和底面接地的夹具)，则不需要通孔。在坚硬的衬底上钻孔费用显著增大，并且会减少这类测试电路的可构造数目。
8)这种电路可以用EM软件进行精确模拟。
9)这种电路可以不用铁电膜进行构造，以便测定用于仿真校正的电路基本损耗(当然是在较高的f0处)。
10)使用低损耗衬底让衬底对整个电路的影响最小化。
11)f0和I.L0.的测量结果可以用于析取铁电膜介电常数和tanδ。
12)图7中的电路可以在示出铁电电容器的基底上开设孔。然后，可以将独立的铁电电容器放置在孔上，以压力固定，从而使得铁电电容器作为独立元件而被测试。
现在参考图8a，其中示出了一个二阶TCC可调谐BPF400。如参照图5讨论过的那样，带通滤波器400的各阶都包括谐振器404和408以及铁电电容器410a或410b。图中显示的谐振器404和408是1/4波长短路谐振器，但是也可以是1/2波长开路谐振器。在两者任一情形下，谐振器长度都因为存在Cf-e而减短了。
施加到铁电电容器410a和410b上的可变直流电压对带通滤波器400起调谐作用。铁电电容器410a和410b经过隔直流电容器412a和412b接地，因为在这个实施例中谐振器是短路的。
射频信号由输入端402接收而自输出端406输出。注意，输入端402和输出端406是可互换的。除了输入电容器434a和输出电容器434b之外，提供一个附加电容器432作为谐振器404和408之间的阻抗变换器或导纳变换器以便生成理想的BPF响应，电容器434a和434b的功能类同于参照附图6讨论过的电容器143和145。显而易见，电容器432也可以是一个分立元件或通过孔实现在谐振器404和408之间耦合。
图8a与8b所示的可调谐二阶滤波器400和450都具有基本的拓扑结构，其通过沿着谐振器404和408整个长度方向的附加电磁耦合而产生高侧或低侧零点。零点可用于为给定的通带I.L.提供更好的抑制效果。当谐振器之间沿它们的整个长度进行耦合时，随着铁电电容器对横跨该通带的带通滤波器进行调谐，通带I.L.和带外抑制度将随之改变。为了将任意由此而引起的失真减低到最小程度，尤其是在抑制频带，电容器432可采用铁电电容器。调谐电容器413和419使得频率中的零道具有可调谐通带。
为了便于偏置、调谐在谐振器404和408之间耦合的铁电电容器，可将电容器432替换为铁电电容器437a和437b，如图8b所示。电容器437a和437b理想地具有两倍于电容器432的电容。在这个实施例中，铁电电容器410a、410b、437a和437b中的每一个都可利用单个的直流调谐电压VDC进行调谐。另外，为电容器437a、437b沉积的铁电材料可以不同于为电容器410a、410b沉积的铁电材料。因此利用单个电压进行调谐可以得到更大的通用性。
用于铁电电容器的单个直流调谐电压可以配置如图9所示。在图9中，VDC连接到一个分压器(divider)网络505。分压器网络505分别连接铁电电容器437a和437b。分压器网络505被配置成为铁电电容器437a和437b提供适当的调谐范围，因此使得零道(zero to track)具有通带，如上所述。
分压器网络505可以如图10所示进行构造。在图10中，VDC连接到R1。R1连接R2同时还连接到电容器437a和437b。R2接地。选择R1和R2使得零道具有通带，如上所述。
可选地，可以利用单独的电压来调谐电容器437a和437b。
现在来看图11a，其中示出了一个可调谐二阶滤波器300，它使用了同轴、整体谐振器302a和302b。注意，也可以使用其它谐振器类型。谐振器302a和302b可以是开路的或是短路的。谐振器302a和302b固定在衬底301的第一表面上。形成在衬底301的第一表面上的衬垫304a和304b与谐振器302a和302b通过引线305a和305b相连接。形成在衬底301的第一表面上的衬垫306a和306b与衬垫304a和304b耦合以形成铁电电容器310a和310b所必需的间隙。铁电层312a、312b位于衬垫304a、304b、306a、306b的下面，从而完整构成铁电间隙电容器310a、310b。注意，附图不是按比例表示的。例如，为了清楚表示将间隙间隔加大了。
传输线320a和320b位于衬底301的第二表面上。这些传输线用作输入射频信号的输入端320a和输出射频信号的输出端320b。输入电容器315a和输出电容器315b分别形成在传输线320a和320b与衬垫304a和304b之间，传输线320a和320b与衬垫304a和304b之间有衬底301，如图11b所示。图11b是图11a所示滤波器300的一部分的剖面图。该剖面图是沿着线B剖切形成的。
此外，电容器321是由衬垫304a和304b的间隔形成的间隙电容器。注意，电容器321提供耦合，作为替代方案，也可以不需要借助电容器321而通过耦合在同轴谐振器302a和302b之间的孔提供耦合。显然，尽管图中显示的同轴谐振器302a和302b是分离结构，但它们可以共用一个公共壁的结构从而节约空间并且允许任意的孔耦合。另外，在它们之间可以既没有间隔也没有壁。也就是说，它们可以采用相互耦合的整体谐振器结构。在通过孔耦合实现电容器321所提供耦合的实施例中，可以将衬垫304a和304b分隔开足够的间距，以使它们之间的间隙电容最小化。为了调谐铁电电容器310a和310b，使偏压VDC耦合通过谐振器340a和340b。每个铁电电容器310a和310b都通过隔直流电容器341a和341b接地。
尽管本发明是针对特定具体实施例进行阐释说明的，但是这些阐释说明仅仅是应用本发明的示例而已，且不应当理解为对本发明的限制性说明。因此，对本发明披露的各种实施例特征的改编、组合都在本发明的保护范围之内，本发明的保护范围由所附权利要求书给出。

Claims (10)

1.一种可调谐电磁信号滤波器，包括谐振器和置于衬底(12)上的可调谐间隙电容器(10)，其中，
所述可调谐间隙电容器包括：
沉积在所述衬底上的铁电膜(16)，所述铁电膜具有由第一膜边缘和第二膜边缘限定的膜宽；
第一金属导体层(18)，其具有形成在所述铁电膜上的第一端部和形成在所述衬底上的第一导体部分，所述第一金属导体层的所述第一端部具有导体宽度W；
第二金属导体层(18)，其具有形成在所述铁电膜上的第二端部和形成在所述衬底上的第二导体部分，所述第二金属导体层的所述第二端部具有导体宽度W；以及
间隙(10)，位于所述第一金属导体层的所述第一端部和所述第二金属导体层的所述第二端部之间，并具有间隙宽度；
其中使所述膜宽达到最小，以使所述第一膜边缘和所述第二膜边缘邻近于所述间隙，所述第一膜宽允许对所述可调谐间隙电容器进行调谐，并使来自铁电膜的损耗达到最小；以及
其中，所述可调谐间隙电容器在约2GHz的频率处具有至少为160的Q值。
2.根据权利要求1所述的可调谐电磁信号滤波器，其中，所述第一金属导体层的所述第一端部临近于所述间隙形成第一组角，且所述第二金属导体层的所述第二端部邻近于所述间隙形成第二组角，所述第一组角和所述第二组角被变圆，以减少所述第一金属导体层和所述第二金属导体层的几何损耗贡献。
3.根据权利要求1所述的可调谐电磁信号滤波器，其中，所述间隙电容器被直接构图在所述谐振器的前面、后面或侧壁上，以使连接损耗贡献达到最小。
4.。根据权利要求1所述的可调谐电磁信号滤波器，其中，所述衬底由纯度≥99％的铝、MgO或蓝宝石形成，用以使衬底损耗贡献达到最小。
5.根据权利要求1所述的可调谐电磁信号滤波器，其中：
所述铁电膜具有约为0.1微米到2.0微米的厚度；
所述膜宽约为0.2mm到0.5mm。
6.一种可调谐电磁信号滤波器，其包括谐振器和可调谐叠层电容器，其中，
所述可调谐叠层电容器包括：
衬底(31)，
金属层(34)，形成在所述衬底上并具有金属层锥形部分，
叠置在所述金属层上的铁电膜(36)，以及
金属衬垫(40)，由所述铁电膜将其与所述金属层隔开，
所述金属衬垫具有形成在所述铁电膜上的衬垫锥形部分和形
成在所述衬垫上的第二部分，
其中所述金属层锥形部分和所述衬垫锥形部分重叠，以形
成由所述铁电膜在垂直面隔开的重叠部分，
其中所述叠层电容器在约2GHz的频率处具有至少为160的Q值。
7.根据权利要求6所述的滤波器，其中，所述金属层的被覆盖部分约为7.0μm×7.0μm，所述金属层由Pt形成并且具有小于或等于0.5μm的厚度，且所述金属衬垫由Ag形成并且具有约1.5到2.5μm的厚度。
8.一种可调谐电磁信号滤波器，其包括谐振器和可调谐交叉指型电容器，其中，
所述可调谐交叉指型电容器包括：
衬底(62)，
形成在所述衬底上的铁电膜(61)，以及
形成在所述铁电膜上并包括第一多个指状物的第一金属层(70)，以及
形成在所述铁电膜上并包括第二多个指状物的第二金属层，所述第二多个指状物与所述第一多个指状物交错，并由具有间隙间距(72)的间隙分开，
其中通过使所述铁电膜达到最小，以使第一膜边缘邻近于所述第一多个指状物，且第二膜边缘邻近于所述第二多个指状物，以及
其中，所述交叉指型电容器在约2GHz的频率处具有至少为160的Q值。
9.根据权利要求8所述的滤波器，其中，所述第一多个指状物具有约为150微米的宽度并且所述间隙间距约为5.0微米，用以使几何损耗贡献达到最小。
10.根据权利要求8所述的滤波器，其中，所述第一多个指状物和所述第二多个指状物限定的角被变圆，以使所述第一金属导体层和所述第二金属导体层的几何损耗贡献达到最小。
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CN106716828A (zh) * 2014-08-20 2017-05-24 追踪有限公司 具有串联谐振器的可调谐hf滤波器
CN106716829A (zh) * 2014-08-20 2017-05-24 追踪有限公司 双工器
US10476478B2 (en) 2014-08-20 2019-11-12 Snaptrack, Inc. Tunable HF filter having series resonators
CN106716829B (zh) * 2014-08-20 2020-05-19 追踪有限公司 双工器
US10911022B2 (en) 2014-08-20 2021-02-02 Snaptrack, Inc. Duplexer
CN111681692A (zh) * 2019-03-11 2020-09-18 格芯公司 多级铁电存储单元
CN111681692B (zh) * 2019-03-11 2023-08-29 格芯公司 多级铁电存储单元
CN110113858A (zh) * 2019-05-29 2019-08-09 中国科学院近代物理研究所 一种最小q值自激调谐系统及调谐方法
CN110113858B (zh) * 2019-05-29 2023-04-18 中国科学院近代物理研究所 一种最小q值自激调谐系统及调谐方法
CN113271078A (zh) * 2021-05-19 2021-08-17 上海鸿晔电子科技股份有限公司 一种滤波器的制造方法
CN113271078B (zh) * 2021-05-19 2023-10-24 上海鸿晔电子科技股份有限公司 一种滤波器的制造方法

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