CN101137911B - 使用温度可调的卡盘设备来测试半导体晶片的方法和装置 - Google Patents
使用温度可调的卡盘设备来测试半导体晶片的方法和装置 Download PDFInfo
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- CN101137911B CN101137911B CN2006800019567A CN200680001956A CN101137911B CN 101137911 B CN101137911 B CN 101137911B CN 2006800019567 A CN2006800019567 A CN 2006800019567A CN 200680001956 A CN200680001956 A CN 200680001956A CN 101137911 B CN101137911 B CN 101137911B
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- temperature
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- semiconductor wafer
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- equipment
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Environmental & Geological Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005001163.2 | 2005-01-10 | ||
DE102005001163A DE102005001163B3 (de) | 2005-01-10 | 2005-01-10 | Verfahren und Vorrichtung zum Testen von Halbleiterwafern mittels einer temperierbaren Aufspanneinrichtung |
PCT/EP2006/000142 WO2006072598A1 (de) | 2005-01-10 | 2006-01-10 | Verfahren und vorrichtung zum testen von halbleiterwafern mittels einer temperierbaren aufspanneinrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101137911A CN101137911A (zh) | 2008-03-05 |
CN101137911B true CN101137911B (zh) | 2011-06-08 |
Family
ID=36274039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800019567A Active CN101137911B (zh) | 2005-01-10 | 2006-01-10 | 使用温度可调的卡盘设备来测试半导体晶片的方法和装置 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7271604B2 (zh) |
EP (1) | EP1844342B1 (zh) |
JP (1) | JP4825812B2 (zh) |
KR (1) | KR101185536B1 (zh) |
CN (1) | CN101137911B (zh) |
DE (1) | DE102005001163B3 (zh) |
ES (1) | ES2821736T3 (zh) |
RU (1) | RU2407023C2 (zh) |
TW (1) | TWI371590B (zh) |
WO (1) | WO2006072598A1 (zh) |
Families Citing this family (47)
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US6951846B2 (en) * | 2002-03-07 | 2005-10-04 | The United States Of America As Represented By The Secretary Of The Army | Artemisinins with improved stability and bioavailability for therapeutic drug development and application |
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US7187188B2 (en) | 2003-12-24 | 2007-03-06 | Cascade Microtech, Inc. | Chuck with integrated wafer support |
US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
US7656172B2 (en) | 2005-01-31 | 2010-02-02 | Cascade Microtech, Inc. | System for testing semiconductors |
US20070294047A1 (en) * | 2005-06-11 | 2007-12-20 | Leonard Hayden | Calibration system |
JP2007088203A (ja) * | 2005-09-22 | 2007-04-05 | Tokyo Electron Ltd | ウエハ検査装置およびウエハ検査方法、ならびにコンピュータプログラム |
JP4525571B2 (ja) * | 2005-11-24 | 2010-08-18 | 住友電気工業株式会社 | ウェハ保持体およびそれを搭載したヒータユニット、ウェハプローバ |
DE102006038457B4 (de) * | 2006-08-16 | 2014-05-22 | Cascade Microtech, Inc. | Verfahren und Vorrichtung zum Temperieren elektronischer Bauelemente |
KR101492408B1 (ko) | 2007-10-10 | 2015-02-12 | 캐스캐이드 마이크로텍 드레스덴 게엠베하 | 소정의 열 조건 하에서의 시험 기판의 시험 방법과 열적으로 조절가능한 탐침기 |
DE102008041250A1 (de) * | 2008-08-13 | 2010-02-25 | Ers Electronic Gmbh | Verfahren und Vorrichtung zum thermischen Bearbeiten von Kunststoffscheiben, insbesondere Moldwafern |
US8319503B2 (en) | 2008-11-24 | 2012-11-27 | Cascade Microtech, Inc. | Test apparatus for measuring a characteristic of a device under test |
KR101015600B1 (ko) * | 2008-12-19 | 2011-02-17 | 세크론 주식회사 | 프로브 스테이션용 스테이지 유닛 및 이를 포함하는 웨이퍼검사 장치 |
JP5640894B2 (ja) * | 2011-05-26 | 2014-12-17 | 東京エレクトロン株式会社 | 温度測定装置、温度測定方法、記憶媒体及び熱処理装置 |
US8814424B1 (en) * | 2011-09-30 | 2014-08-26 | Emc Corporation | Power measurement transducer |
US8814425B1 (en) * | 2011-09-30 | 2014-08-26 | Emc Corporation | Power measurement transducer |
US8602641B2 (en) * | 2011-10-26 | 2013-12-10 | Temptronic Corporation | Environmental test system and method with in-situ temperature sensing of device under test (DUT) |
KR101942027B1 (ko) | 2012-03-28 | 2019-04-11 | 삼성전자 주식회사 | 디바이스의 온도 예측 방법 |
CN103645350B (zh) * | 2013-12-09 | 2017-01-11 | 致茂电子(苏州)有限公司 | 具有扇形转盘传输设备的检测机台 |
KR102433967B1 (ko) * | 2014-11-28 | 2022-08-22 | (주)테크윙 | 전자부품 테스트용 핸들러 |
CN110780133B (zh) * | 2014-11-28 | 2022-01-04 | 泰克元有限公司 | 用于测试电子部件的分选机 |
JP7078838B2 (ja) * | 2017-12-01 | 2022-06-01 | 東京エレクトロン株式会社 | プローバ |
TWI684014B (zh) * | 2018-01-18 | 2020-02-01 | 謝德風 | 模組化多點測試裝置 |
KR20190116037A (ko) * | 2018-04-03 | 2019-10-14 | 에스케이하이닉스 주식회사 | 웨이퍼 척킹 장치 및 이를 포함하는 웨이퍼 테스트 장비 |
DE102019005093A1 (de) * | 2019-07-22 | 2021-01-28 | Att Advanced Temperature Test Systems Gmbh | Verfahren zur temperatursteuerung bzw. -regelung eines chucks für einen wafer, eine temperiereinrichtung zum temperieren eines chucks sowie ein wafertestsystem zum testen eines wafers |
CN113075429A (zh) * | 2020-01-03 | 2021-07-06 | 迪科特测试科技(苏州)有限公司 | 探测卡、探测系统及探测方法 |
US11493551B2 (en) | 2020-06-22 | 2022-11-08 | Advantest Test Solutions, Inc. | Integrated test cell using active thermal interposer (ATI) with parallel socket actuation |
CN112345119B (zh) * | 2020-09-25 | 2023-07-21 | 华东光电集成器件研究所 | 一种半导体晶圆温度标定系统 |
US11549981B2 (en) | 2020-10-01 | 2023-01-10 | Advantest Test Solutions, Inc. | Thermal solution for massively parallel testing |
US11821913B2 (en) | 2020-11-02 | 2023-11-21 | Advantest Test Solutions, Inc. | Shielded socket and carrier for high-volume test of semiconductor devices |
US11808812B2 (en) | 2020-11-02 | 2023-11-07 | Advantest Test Solutions, Inc. | Passive carrier-based device delivery for slot-based high-volume semiconductor test system |
US20220155364A1 (en) * | 2020-11-19 | 2022-05-19 | Advantest Test Solutions, Inc. | Wafer scale active thermal interposer for device testing |
US11609266B2 (en) | 2020-12-04 | 2023-03-21 | Advantest Test Solutions, Inc. | Active thermal interposer device |
US11573262B2 (en) | 2020-12-31 | 2023-02-07 | Advantest Test Solutions, Inc. | Multi-input multi-zone thermal control for device testing |
US11754619B2 (en) * | 2021-01-11 | 2023-09-12 | Star Technologies, Inc. | Probing apparatus with temperature-adjusting mechanism |
US11587640B2 (en) | 2021-03-08 | 2023-02-21 | Advantest Test Solutions, Inc. | Carrier based high volume system level testing of devices with pop structures |
RU2756337C1 (ru) * | 2021-03-19 | 2021-09-29 | Общество с ограниченной ответственностью «Остек-Электро» | Устройство температурно-вакуумного воздействия |
KR20220146304A (ko) | 2021-04-23 | 2022-11-01 | 삼성전자주식회사 | 전원변환부를 갖는 프로브 카드 및 이를 포함하는 테스트 시스템 |
TWI827329B (zh) * | 2021-10-29 | 2023-12-21 | 致茂電子股份有限公司 | 探針冷卻系統、冷卻方法及具備該系統之電子元件測試設備 |
US11656273B1 (en) | 2021-11-05 | 2023-05-23 | Advantest Test Solutions, Inc. | High current device testing apparatus and systems |
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US5166607A (en) * | 1991-05-31 | 1992-11-24 | Vlsi Technology, Inc. | Method and apparatus to heat the surface of a semiconductor die in a device during burn-in while withdrawing heat from device leads |
US6111421A (en) * | 1997-10-20 | 2000-08-29 | Tokyo Electron Limited | Probe method and apparatus for inspecting an object |
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US4791364A (en) | 1985-08-20 | 1988-12-13 | Thermonics Incorporated | Thermal fixture for testing integrated circuits |
DE3536098A1 (de) | 1985-10-09 | 1987-04-09 | Siemens Ag | Einrichtung zum ueberwachen der temperatur eines elektrischen bauelements |
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US5084671A (en) * | 1987-09-02 | 1992-01-28 | Tokyo Electron Limited | Electric probing-test machine having a cooling system |
JPH03184355A (ja) * | 1989-12-13 | 1991-08-12 | Mitsubishi Electric Corp | ウエハプローバ |
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-
2005
- 2005-01-10 DE DE102005001163A patent/DE102005001163B3/de active Active
- 2005-01-18 US US11/037,870 patent/US7271604B2/en active Active
-
2006
- 2006-01-03 TW TW095100240A patent/TWI371590B/zh active
- 2006-01-10 KR KR1020077017504A patent/KR101185536B1/ko active IP Right Grant
- 2006-01-10 ES ES06700504T patent/ES2821736T3/es active Active
- 2006-01-10 CN CN2006800019567A patent/CN101137911B/zh active Active
- 2006-01-10 JP JP2007549867A patent/JP4825812B2/ja active Active
- 2006-01-10 RU RU2007125378/28A patent/RU2407023C2/ru active
- 2006-01-10 EP EP06700504.1A patent/EP1844342B1/de active Active
- 2006-01-10 WO PCT/EP2006/000142 patent/WO2006072598A1/de active Application Filing
Patent Citations (2)
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US5166607A (en) * | 1991-05-31 | 1992-11-24 | Vlsi Technology, Inc. | Method and apparatus to heat the surface of a semiconductor die in a device during burn-in while withdrawing heat from device leads |
US6111421A (en) * | 1997-10-20 | 2000-08-29 | Tokyo Electron Limited | Probe method and apparatus for inspecting an object |
Also Published As
Publication number | Publication date |
---|---|
RU2407023C2 (ru) | 2010-12-20 |
US7271604B2 (en) | 2007-09-18 |
CN101137911A (zh) | 2008-03-05 |
US20060158207A1 (en) | 2006-07-20 |
ES2821736T3 (es) | 2021-04-27 |
JP2008527701A (ja) | 2008-07-24 |
TW200628818A (en) | 2006-08-16 |
EP1844342A1 (de) | 2007-10-17 |
WO2006072598A8 (de) | 2007-09-07 |
KR101185536B1 (ko) | 2012-09-24 |
EP1844342B1 (de) | 2020-07-01 |
JP4825812B2 (ja) | 2011-11-30 |
WO2006072598A1 (de) | 2006-07-13 |
TWI371590B (en) | 2012-09-01 |
RU2007125378A (ru) | 2009-02-20 |
KR20070110840A (ko) | 2007-11-20 |
DE102005001163B3 (de) | 2006-05-18 |
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