CN101160594B - 具有电子功能的多层复合体 - Google Patents

具有电子功能的多层复合体 Download PDF

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CN101160594B
CN101160594B CN200680012163.5A CN200680012163A CN101160594B CN 101160594 B CN101160594 B CN 101160594B CN 200680012163 A CN200680012163 A CN 200680012163A CN 101160594 B CN101160594 B CN 101160594B
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multilayer composite
different
layer
functions
electronics organic
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CN101160594A (zh
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A·乌尔曼
A·克诺布洛赫
M·韦尔克
W·菲克斯
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PolylC GmbH and Co KG
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    • HELECTRICITY
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
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    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
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    • H05K2201/10174Diode
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Abstract

本发明涉及一种具有电子功能的多层复合体,特别是包含多个有机电子元件的电子组件。本发明首次提供了例如RFID标签的整个组件的结构的可能性,包括所有元件的整个标签可以在一个制造过程中实施。

Description

具有电子功能的多层复合体
技术领域
本发明涉及一种具有电子功能的多层复合体,特别是包括多个有机电子元件的电子组件。
背景技术
例如,WO02/15264公开了一种电子元件。电子元件通常通过相继地在衬底上施加多种功能层(导电层、半导体层、绝缘层和又一导电层)来制造。多个电子元件可以被组合到印刷电路板上,例如,在DE10151440C1中描述的。
通常使用的组件的缺点在于为了形成更为复杂的组件,多个分立的元件必须分别和依次制造,通过电传导的方式连接和布置。为此,将带来多种高成本的工作步骤和工艺步骤。
发明内容
本发明的目的是提供一种组件结构,该结构可以简单的实施并且以适合大规模生产的方式提高成本效率,且其中多种基本的电子元件,即所谓的诸如有源和无源元件,例如晶体管、场效应晶体管、电接触通路、电阻器、互连电阻器、线圈、电容器、整流器等,可以以任何想要的方式组装,特别是与二极管组装。
本发明涉及一种包含至少两个不同电子元件的多层复合体,该电子元件至少具有两个层,这两个层共同地在一操作中分别施加并且可以是均质的或图案化的。
层中之一是根据本发明的复合体中的元件所共有的,该层例如是均质的或图案化的半导体层和/或其它层,例如也可以是在特定环境下应用时由于其的高粘性未图案化的层。
根据本发明的一个有利的改进是,例如,在连续的工艺中,复合体的所有元件,也就是说不同的元件和后面任何想要的数量,被同时制造在相同的衬底上。这导致一些元件包含的层在元件中没有功能性。
至少两层中的一个,但是,大体上甚至是五层或者更多层中的一层为复合体的元件所共有,该层同样优选为该载体层,更确切地说是为所有元件所共有的衬底。
根据一个优选实施例,多层复合体的所有元件由粘着层(cohesivelayers)构成,其中的一些层是图案化的,而另一些层是连续的均质层。为在该复合体上的所有元件同时形成这些层,并且如果需要的话,会为该相应的元件适当地图案化。
优选地,用该多层复合体来实施包括至少一个二极管和附加的不同元件的组件。
例如,简单的整流器被作为该多层复合体实施,至少两个不同的元件,二极管和电容器,存在于该复合体中。
如果该形成该复合体的组件包括至少三个不同的元件,至少两个二极管,电容器和接触通路,复杂的整流器也可以实施在该多层复合体中。
为了构成具有调节器的简单的整流器,该多层复合体具有,例如,至少三个不同的元件,二极管、电容器和晶体管。
最后,为了在该多层复合体中形成应答器,有至少具有四个不同的器件,二极管、电容器、晶体管和一个或多个接触通路。
多层复合体可大体上包括所有可能的元件,特别地,例如任意期望数量的晶体管、场效应晶体管、电接触通路、电阻器、互连电阻器、线圈、电容器、整流器等等,以致于它们可以与一个或多个二极管结合。
优选地,该多层复合体在该两个导电层中包含两种材料,其中该两种材料在功函数方面不同。在这种情况下,其特别优选地用于这样的导体层以及这样的反电极材料:与半导体层接触的所述导体层由银构成,并且所述反电极材料是具有不同功函数的材料,特别为更廉价的材料,例如铜、镍、铬、钴等等。
当制造该组件时,特别优选地是在制造工艺中使用四个图案化层和它们的慎重考虑后的重叠来制造所有的元件。
在这种情况下,典型结构从底部到顶部的顺序是衬底、导体层、半导体层、绝缘层和上部导体层。“底部-顶部”层的顺序也可以想到的并且附随地包含在本发明的思想中。
在这种情况下,该复合体的两个导体层特别优选地是由不同的材料构成,特别是具有不同的功函数或不同的费米能级。这例如通过使用由两种不同金属和/或合金构成的金属层来获得。在这种情况下,用银作为与半导体层相邻接的电极,特别是作为与该半导体层接触的导体层,优选地使用与银具有不同功函数的另一金属/合金作为该反电极。
附图说明
下面本发明还将用四幅附图更加详细地描述,这些附图示意性地描述了本发明的优选实施例。
图1表示了例如用于整个的应答器电路的、所需要的整个集成可印刷的电子器件的截面示意图。
图2再次表示还可以在图1中看到的所有元件,但是,在此情况下,在该二极管位置处的该半导体层未被拉至与其它元件的上部电极的水平,而是在该情况下该二极管的上部电极更深。
图3表示用于提供电压的结构;在这种情况下,二极管、电容器和一个接触通路元件同时制造在衬底上。
最后图4表示了结合电接触通路、晶体管和电阻器和/或线圈的复合体。
具体实施方式
从图1的底部可以看到衬底1。所有具有光滑表面的绝缘材料都可用作衬底;柔性的和刚性的材料也可以使用。例如,在那个位置,使用例如PET薄膜或者其它聚合塑料膜、玻璃、石英、陶瓷或另一材料的柔性薄膜。
紧邻衬底1的层2是该第一导体层或该下部电极2,其以图案化的形式施加。根据一个有利的改进,被随后的半导体层覆盖的源极和漏极电极就制造在这里。只有导体材料才可以被用作该导体层2,在这种情况下,无论它们是有机或无机材料或者复合材料都是不重要的。根据一个优选的实施例,具有范围在4.6-5.2eV,优选4.9eV的功函数的金属或合金被用作该导体层的材料,该导体层与半导体层接触。具有4.9eV的功函数的银特别优选地用在该位置。当选择材料时,优选地要确保功函数与该半导体的费米能级相匹配,这样与该半导体的费米能级相差最好为0.3eV或者更小。然后确保该电荷载流子自半导体材料流入该导体材料时没有任何问题。
由于其粘性,该半导体层3在一定情况下紧邻该第一和下部电极层时设置为未图案化的形式。一般地,例如P3AT、P3DHTT、规则区域聚烷基噻吩(regioregular polyalkylthiophenes)、聚芴衍生物(polyfluorenederivative)、PPV和/或其它聚合物的有机材料,例如具有共轭主链或在主链上具有自由移动的电子对的材料优选地用作该半导体层的材料。该半导体层3也可以例如通过印刷的方法施加以图案化的形式。
接下来,在多数电子元件中,只在作为介电层或绝缘层的范围内不得不被应用为图案化的形式的一绝缘层4应当在该衬底上的那个形成二极管或者接触通路的位置被省略掉,因为它将产生干扰。该绝缘层4由例如可溶的可印刷的材料构成。有机可溶材料,例如聚苯乙烯衍生物、PMMA或一般的绝缘聚合物被优选用作该绝缘层的材料。
作为该电子器件基本部分的终结,该图案化的绝缘层4紧邻上部导体层5,而该导体层5优选地是图案化的。在这种情况下,使用导电有机和无机材料和/或复合材料。特别地优选使用功函数与该下部导体层(反电极)的材料不同的金属。根据一个实施例,在这种情况下使用功函数在3到5eV范围内,特别是3.0eV到4.6eV,或者以上的材料;例如,在这种情况下成功地使用铜、镍、铬、钴、锰等等。
然后将接下来的元件实施在图1的衬底1上,从左到右:电接触通路a;紧挨着接下来的元件并与它们例如借助于上部导体层5连接的是晶体管b,晶体管b的源极/漏极电极在下部导体层2上。二极管c布置在该晶体管b的旁边,在二极管c中,半导体层3拉高到该反电极5的高度,因此没有电流/电压损失的产生。可以在二极管c的右边看到电容器d,而电阻器或线圈e位于所述电容器的右侧,也就是说在外部的最右侧。
图1中也可以看到的所有元件和所有层再次在图2中示出,但是在这种情况下,在二极管c的位置处的半导体层3没有被拉到其它元件的该上部电极5的水平,其中所述其它元件为该电接触通路a、晶体管b、电容器d和电阻器e,而在这种情况下该二极管c的上部电极5更深,位于绝缘层4的水平。
在图3中,如果所有的层为所有元件所共有,需要施加电压到整流器上的所有的基础元件被一起实施在衬底上,并且可以同时制造。层的顺序对应于图1,也可以使用同样的材料或者其它相应材料。层1为衬底,图案化的层2为导体层,3是半导体层,4是绝缘层而5为该图案化的反电极。
在这种情况下,提供了元件接下来的顺序:在外部最左侧为该接触通路1,二极管c在其旁边并且电容器d挨着该二极管c。例如,可以使用在此示出的该复合体整流来自天线的交流电压。在该二极管区域c的该半导体应用为稍微厚的形式;例如,这可以在同时制造元件时使用装饰印刷的通路a来获得。
图4示出了由电接触通路、晶体管和电阻器或线圈组成的多层复合体。至少PFET(聚合物场效应晶体管)、倒相器、环形振荡器、触发器、分频器和/或计数器可以使用这种层结构和这些元件的布置来构建,其中这些元件为电接触通路a、晶体管b和电阻器或线圈e。
该层结构再次对应于从其它附图中得知的层结构。尽管在此情况下未实施二极管,但是该上部电极5和下部电极2的导体材料可以完全不同,特别是在其功函数方面。
由于器件和/或材料的敏感度,包括多种材料和/或层叠的元件的封装和/或密封仍然被建议为用作最上层或末端。该封装/密封可以由刚性的或柔性的材料构成。
实施的电子器件的基础部分,例如晶体管、场效应晶体管、电接触通路、电阻器、互连电阻器、电感、二极管、电容器和整流器等,可以借助于层利用该结构在衬底上彼此紧接的和/或在彼此之后制成,所述层是以平坦的方式的层和/或图案化的层连续施加的。
同时在组件中并且采用连续方法的、优选的所有元件的有效制造使得制造包含层的分立元件成为可能,特别地该层在此没有功能,所述有效制造适合大规模生产;例如,在场效应晶体管和/或在电容器中,栅电极可以具有不同于源/漏电极的功函数,这种情况下功函数的不同没有功能性。
例如,电容器和互连电阻器以及接触通路包括在那个位置多余的且没有功能的半导体。
复杂电子器件的基础部分,例如场效应晶体管、电接触通路、电阻器、互连电阻器、线圈、二极管、电容器和整流器可以借助于以平坦方法和/或图案化的层的连续施加,使用附图中所示的结构,在衬底上彼此紧接的和/或在彼此之后制造。
本发明首次提供了诸如RFID标签的整个组件的结构的可能性,包括所有元件的该整个标签可以在一个生产过程中实施。从而,首次描述了适于大规模生产的具有成本效益的制造方法。

Claims (11)

1.一种多层复合体,包括:至少两个功能不同的电子有机元件,所述电子有机元件具有至少两个电极层和所述至少两个电极层之间的至少一个有机半导体层,所述至少两个电极层分别在一个操作中共同施加并且是均质的或者图案化的两个层,所述至少两个电极层是所述至少两个功能不同的电子有机元件所共有的并且每个电极的材料具有不同的功函数,并且所述多层复合体的所述至少两个功能不同的电子有机元件具有共有的衬底,其中所述至少两个功能不同的电子有机元件从包括电容器、接触通路、二极管和/或晶体管的组中选择。
2.根据权利要求1所述的多层复合体,所述电极层之一由银构成。
3.根据权利要求1所述的多层复合体,所述电极层之一由铜构成。
4.根据权利要求1至3之一所述的多层复合体,其中所述两个电极层形成电极和反电极。
5.根据权利要求1至3之一所述的多层复合体,包含至少一个其它层,所述至少一个其它层对于所述功能不同的电子有机元件是共有的,而且在所述功能不同的电子有机元件之一中是必要的,但是对于其它元件的功能来说不是必要的而且不妨碍所述其它元件的功能。
6.根据权利要求1至3之一所述的多层复合体,所述至少两个功能不同的电子有机元件中的一个为二极管。
7.根据权利要求6所述的多层复合体,所述至少两个功能不同的电子有机元件中的一个为电容器。
8.根据权利要求6所述的多层复合体,其中实施至少两个二极管和一个电容器。
9.根据权利要求1至3之一所述的多层复合体,其中所述至少两个功能不同的电子有机元件所共有的电极层中的至少一个能以连续和平坦的方式制造在衬底上。
10.根据权利要求1至3之一所述的多层复合体,其中所述至少两个功能不同的电子有机元件所共有的电极层中的至少一个是印刷的。
11.根据权利要求1至3之一所述的多层复合体,其中所述至少两个功能不同的电子有机元件所共有的电极层中的一个在一个元件中不是必要的但是不妨碍该元件的功能并且能以连续的和平坦的方式制造。
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