CN101183702B - 半导体发光元件及其制造方法 - Google Patents
半导体发光元件及其制造方法 Download PDFInfo
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- CN101183702B CN101183702B CN2007101870685A CN200710187068A CN101183702B CN 101183702 B CN101183702 B CN 101183702B CN 2007101870685 A CN2007101870685 A CN 2007101870685A CN 200710187068 A CN200710187068 A CN 200710187068A CN 101183702 B CN101183702 B CN 101183702B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
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Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006311646A JP5306589B2 (ja) | 2006-11-17 | 2006-11-17 | 半導体発光素子及びその製造方法 |
JP311646/06 | 2006-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101183702A CN101183702A (zh) | 2008-05-21 |
CN101183702B true CN101183702B (zh) | 2010-06-09 |
Family
ID=39416051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101870685A Active CN101183702B (zh) | 2006-11-17 | 2007-11-19 | 半导体发光元件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8120041B2 (zh) |
JP (1) | JP5306589B2 (zh) |
CN (1) | CN101183702B (zh) |
Families Citing this family (23)
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JP2007299846A (ja) * | 2006-04-28 | 2007-11-15 | Sharp Corp | 半導体発光素子及びその製造方法 |
US20110272727A1 (en) * | 2007-02-13 | 2011-11-10 | Epistar Corporation | Light-emitting diode and method for manufacturing the same |
TW200834969A (en) * | 2007-02-13 | 2008-08-16 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
KR101449005B1 (ko) | 2007-11-26 | 2014-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US8299480B2 (en) * | 2008-03-10 | 2012-10-30 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer |
US7947991B2 (en) * | 2008-07-29 | 2011-05-24 | Huga Optotech Inc. | High efficiency lighting device |
JP2010067890A (ja) * | 2008-09-12 | 2010-03-25 | Hitachi Cable Ltd | 発光素子 |
TWI531088B (zh) | 2009-11-13 | 2016-04-21 | 首爾偉傲世有限公司 | 具有分散式布拉格反射器的發光二極體晶片 |
US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
US9142715B2 (en) | 2010-06-24 | 2015-09-22 | Seoul Viosys Co., Ltd. | Light emitting diode |
WO2012015153A2 (en) | 2010-07-28 | 2012-02-02 | Seoul Opto Device Co., Ltd. | Light emitting diode having distributed bragg reflector |
JP2012204373A (ja) * | 2011-03-23 | 2012-10-22 | Toyoda Gosei Co Ltd | 半導体発光素子 |
KR20150039475A (ko) * | 2013-10-02 | 2015-04-10 | 엘지이노텍 주식회사 | 발광소자 |
CN104022181B (zh) * | 2014-05-26 | 2016-05-18 | 武汉电信器件有限公司 | 一种光电二极管的制作方法 |
CN105322062B (zh) * | 2014-06-28 | 2017-11-17 | 山东浪潮华光光电子股份有限公司 | 一种p面带有DBR反射层的反极性AlGaInP发光二极管结构 |
KR101651923B1 (ko) * | 2014-12-31 | 2016-08-29 | 최운용 | 고전압 구동 발광소자 및 그 제조 방법 |
CN105990475B (zh) * | 2015-02-11 | 2019-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 光电子器件及其制作方法 |
KR102342718B1 (ko) * | 2015-04-27 | 2021-12-23 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 적색 발광소자 및 조명장치 |
CN107689409B (zh) * | 2016-08-03 | 2019-09-20 | 展晶科技(深圳)有限公司 | 发光二极管 |
US11094865B2 (en) * | 2017-01-26 | 2021-08-17 | Suzhou Lekin Semiconductor Co., Ltd. | Semiconductor device and semiconductor device package |
KR102549171B1 (ko) * | 2017-07-12 | 2023-06-30 | 삼성전자주식회사 | 발광소자 패키지 및 이를 이용한 디스플레이 장치 |
CN114361304A (zh) * | 2021-02-20 | 2022-04-15 | 兆劲科技股份有限公司 | 一种发光元件 |
CN116525733B (zh) * | 2023-06-30 | 2023-08-29 | 江西兆驰半导体有限公司 | 一种反极性发光二极管外延片、制备方法及led |
Citations (2)
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CN1355569A (zh) * | 2000-11-27 | 2002-06-26 | 国联光电科技股份有限公司 | 发光二极体结构及其制造方法 |
CN1567603A (zh) * | 2003-07-04 | 2005-01-19 | 厦门三安电子有限公司 | 一种发光二极管外延结构 |
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JP3239061B2 (ja) | 1996-02-29 | 2001-12-17 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
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2006
- 2006-11-17 JP JP2006311646A patent/JP5306589B2/ja active Active
-
2007
- 2007-11-15 US US11/940,846 patent/US8120041B2/en active Active
- 2007-11-19 CN CN2007101870685A patent/CN101183702B/zh active Active
Patent Citations (2)
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CN1355569A (zh) * | 2000-11-27 | 2002-06-26 | 国联光电科技股份有限公司 | 发光二极体结构及其制造方法 |
CN1567603A (zh) * | 2003-07-04 | 2005-01-19 | 厦门三安电子有限公司 | 一种发光二极管外延结构 |
Also Published As
Publication number | Publication date |
---|---|
CN101183702A (zh) | 2008-05-21 |
JP5306589B2 (ja) | 2013-10-02 |
US20080116471A1 (en) | 2008-05-22 |
US8120041B2 (en) | 2012-02-21 |
JP2008130663A (ja) | 2008-06-05 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: XIAMEN SAN AN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: SHARP CORPORATION Effective date: 20150127 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; TO: 361009 XIAMEN, FUJIAN PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20150127 Address after: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Patentee after: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Address before: Osaka Japan Patentee before: Sharp Corporation |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20080521 Assignee: Integrated circuit Co., Ltd is pacified by Xiamen City three Assignor: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Contract record no.: 2016120000007 Denomination of invention: Semiconductor light emitting element and method for fabricating the same Granted publication date: 20100609 License type: Common License Record date: 20160311 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model |