CN101199022A - 对非易失性存储设备中的耦合的补偿 - Google Patents
对非易失性存储设备中的耦合的补偿 Download PDFInfo
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- CN101199022A CN101199022A CNA2006800170237A CN200680017023A CN101199022A CN 101199022 A CN101199022 A CN 101199022A CN A2006800170237 A CNA2006800170237 A CN A2006800170237A CN 200680017023 A CN200680017023 A CN 200680017023A CN 101199022 A CN101199022 A CN 101199022A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/099,239 | 2005-04-05 | ||
US11/099,239 US7196946B2 (en) | 2005-04-05 | 2005-04-05 | Compensating for coupling in non-volatile storage |
PCT/US2006/011811 WO2006107730A1 (en) | 2005-04-05 | 2006-03-31 | Compensating for coupling in non-volatile strorage |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101199022A true CN101199022A (zh) | 2008-06-11 |
CN101199022B CN101199022B (zh) | 2012-04-11 |
Family
ID=36645702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800170237A Active CN101199022B (zh) | 2005-04-05 | 2006-03-31 | 补偿非易失性存储设备中浮动栅极之间耦合的方法及系统 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7196946B2 (zh) |
EP (1) | EP1866930B1 (zh) |
JP (1) | JP2008536252A (zh) |
KR (1) | KR100934497B1 (zh) |
CN (1) | CN101199022B (zh) |
AT (1) | ATE510287T1 (zh) |
TW (1) | TWI313865B (zh) |
WO (1) | WO2006107730A1 (zh) |
Cited By (8)
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CN101677020A (zh) * | 2008-09-19 | 2010-03-24 | 三星电子株式会社 | 闪速存储器件和系统及其读取方法 |
CN102203878A (zh) * | 2008-10-30 | 2011-09-28 | 桑迪士克公司 | 用于改进升压箝位的对位线编程 |
CN103065678A (zh) * | 2011-10-21 | 2013-04-24 | 点序科技股份有限公司 | 闪速存储器装置及其数据储存方法 |
CN102187399B (zh) * | 2008-10-16 | 2013-12-11 | 桑迪士克科技股份有限公司 | 使用字线耦合的用于存储器的多趟次编程 |
CN103811078A (zh) * | 2014-03-07 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | 闪存的数据修复方法 |
CN102177554B (zh) * | 2008-08-08 | 2014-07-02 | 桑迪士克科技股份有限公司 | 补偿在非易失性存储器中的读操作期间的耦合 |
CN106158039A (zh) * | 2015-05-13 | 2016-11-23 | 桑迪士克科技有限责任公司 | 非易失性存储器中的动态读取低谷搜索 |
CN108133730A (zh) * | 2017-12-22 | 2018-06-08 | 联芸科技(杭州)有限公司 | 快闪存储器的读取控制方法、存储器读取装置和存储器系统 |
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CN106158039A (zh) * | 2015-05-13 | 2016-11-23 | 桑迪士克科技有限责任公司 | 非易失性存储器中的动态读取低谷搜索 |
CN106158039B (zh) * | 2015-05-13 | 2019-12-03 | 桑迪士克科技有限责任公司 | 非易失性存储器中的动态读取低谷搜索 |
CN108133730A (zh) * | 2017-12-22 | 2018-06-08 | 联芸科技(杭州)有限公司 | 快闪存储器的读取控制方法、存储器读取装置和存储器系统 |
CN108133730B (zh) * | 2017-12-22 | 2020-09-11 | 联芸科技(杭州)有限公司 | 快闪存储器的读取控制方法、存储器读取装置和存储器系统 |
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US7196946B2 (en) | 2007-03-27 |
KR100934497B1 (ko) | 2009-12-30 |
WO2006107730A1 (en) | 2006-10-12 |
US20070140006A1 (en) | 2007-06-21 |
US20060221683A1 (en) | 2006-10-05 |
EP1866930A1 (en) | 2007-12-19 |
EP1866930B1 (en) | 2011-05-18 |
JP2008536252A (ja) | 2008-09-04 |
CN101199022B (zh) | 2012-04-11 |
KR20080016545A (ko) | 2008-02-21 |
TWI313865B (en) | 2009-08-21 |
ATE510287T1 (de) | 2011-06-15 |
US7321509B2 (en) | 2008-01-22 |
TW200707437A (en) | 2007-02-16 |
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