CN101207179A - 存储器单元及其制造方法 - Google Patents
存储器单元及其制造方法 Download PDFInfo
- Publication number
- CN101207179A CN101207179A CNA2007101537432A CN200710153743A CN101207179A CN 101207179 A CN101207179 A CN 101207179A CN A2007101537432 A CNA2007101537432 A CN A2007101537432A CN 200710153743 A CN200710153743 A CN 200710153743A CN 101207179 A CN101207179 A CN 101207179A
- Authority
- CN
- China
- Prior art keywords
- electric resistance
- resistance structure
- hydrogen
- memory cell
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of the switching material, e.g. post-treatment, doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06126497 | 2006-12-19 | ||
EP06126497.4 | 2006-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101207179A true CN101207179A (zh) | 2008-06-25 |
CN101207179B CN101207179B (zh) | 2012-05-23 |
Family
ID=39543289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101537432A Expired - Fee Related CN101207179B (zh) | 2006-12-19 | 2007-09-14 | 存储器单元及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7872901B2 (zh) |
CN (1) | CN101207179B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113488589A (zh) * | 2021-06-28 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | 忆阻器件、忆阻器件制作方法及显示面板 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021108367A1 (en) * | 2019-11-27 | 2021-06-03 | Quantram Corporation | Systems and methods for data storage |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4839700A (en) * | 1987-12-16 | 1989-06-13 | California Institute Of Technology | Solid-state non-volatile electronically programmable reversible variable resistance device |
JP2000132560A (ja) * | 1998-10-23 | 2000-05-12 | Matsushita Electric Ind Co Ltd | 中国語テレテキスト処理方法及び装置 |
WO2000049659A1 (en) * | 1999-02-17 | 2000-08-24 | International Business Machines Corporation | Microelectronic device for storing information and method thereof |
US7085771B2 (en) * | 2002-05-17 | 2006-08-01 | Verity, Inc | System and method for automatically discovering a hierarchy of concepts from a corpus of documents |
US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
US6611449B1 (en) * | 2002-09-24 | 2003-08-26 | Infineon Technologies Aktiengesellschaft | Contact for memory cells |
US7834339B2 (en) * | 2006-12-19 | 2010-11-16 | International Business Machines Corporation | Programmable-resistance memory cell |
-
2007
- 2007-09-14 CN CN2007101537432A patent/CN101207179B/zh not_active Expired - Fee Related
- 2007-12-17 US US11/957,797 patent/US7872901B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113488589A (zh) * | 2021-06-28 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | 忆阻器件、忆阻器件制作方法及显示面板 |
CN113488589B (zh) * | 2021-06-28 | 2023-11-28 | 深圳市华星光电半导体显示技术有限公司 | 忆阻器件、忆阻器件制作方法及显示面板 |
Also Published As
Publication number | Publication date |
---|---|
US7872901B2 (en) | 2011-01-18 |
CN101207179B (zh) | 2012-05-23 |
US20080152932A1 (en) | 2008-06-26 |
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Legal Events
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171128 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171128 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120523 Termination date: 20180914 |
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CF01 | Termination of patent right due to non-payment of annual fee |