CN101208404B - For the automatic stopping abrasive composition of polishing height ladder height oxide layer - Google Patents
For the automatic stopping abrasive composition of polishing height ladder height oxide layer Download PDFInfo
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- CN101208404B CN101208404B CN200680023347.1A CN200680023347A CN101208404B CN 101208404 B CN101208404 B CN 101208404B CN 200680023347 A CN200680023347 A CN 200680023347A CN 101208404 B CN101208404 B CN 101208404B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D90/00—Component parts, details or accessories for large containers
- B65D90/12—Supports
- B65D90/20—Frames or nets, e.g. for flexible containers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D88/00—Large containers
- B65D88/02—Large containers rigid
- B65D88/12—Large containers rigid specially adapted for transport
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- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
- E05B83/00—Vehicle locks specially adapted for particular types of wing or vehicle
- E05B83/02—Locks for railway freight-cars, freight containers or the like; Locks for the cargo compartments of commercial lorries, trucks or vans
- E05B83/08—Locks for railway freight-cars, freight containers or the like; Locks for the cargo compartments of commercial lorries, trucks or vans with elongated bars for actuating the fastening means
Abstract
The present invention relates to chemical-mechanical polishing composition, it is for having the chemical-mechanical polishing process of high ladder height, silicon dioxide layer that roughness is serious in the production technology of semiconducter device, and there is described in using the method for the chemical-mechanical polishing composition of automatic hold function, namely after removal ladder height carries out leveling, polishing speed reduces greatly, it is characterized in that described chemical-mechanical polishing composition comprises i) metal oxide abrasive grains; And ii) at least one compound, this compound is selected from: amino alcohol, hydroxyl and carboxyl sum is at least hydroxycarboxylic acid or its salt of 3, or their mixture.Polymeric organic acid, sanitas, lubricant and tensio-active agent can also be contained in the present compositions.Automatic stopping polishing composition according to the present invention can shorten polished layer vapor deposition times, save vapour deposition starting material, shorten the chemical-mechanical polishing time and save the slurry used.Therefore, according to the present invention, materials consumption reduces, and process period shortens, and adds process redundancy by the automatic hold function of polishing speed, thus beneficially improves productivity.
Description
Technical field
The present invention relates to the chemical-mechanical polishing composition of automatic stopping (auto-stopping), it has the large semiconducter device of the roughness of high ladder height (step-height) for polishing; And use said composition to be used for the method for chemical-mechanical polishing.
Background technology
Along with reducing of semiconductor element volume, the raising of density, the technology for the formation of micro-pattern comes into operation, and therefore the surface tissue of semiconducter device becomes more complicated due to higher top layer ladder height.As planarizing technique, in order to remove the ladder height of the certain layer that base material is formed in semiconducter device manufacture, have employed CMP method.Along with the raising of integrated level and the severization of technological specification, need the smooth insulation layer with very large ladder height fast.Such as, doing chemical-mechanical polishing to the silicon oxide layer with very high ladder height is exactly this situation, and described silicon oxide layer is insulation and applying after manufacture DRAM electric capacity.
If when polishing has the layer of high ladder height; ladder height can be removed rapidly; and after ladder height is removed; removing speed becomes slowly; obtain automatic hold function; this is conducive to by reducing raw materials consumption, increasing process redundancy (processmargin) and shorten process period and increase productivity, and tool has the following advantages:
1) shorten the vapor deposition times of polished layer, and save vapour deposition starting material;
2) shorten the chemical-mechanical polishing time, and save the slurry that will use;
3) process redundancy is increased.
Therefore, need exploitation to possess the polishing composition of automatic hold function, it can remove ladder height fast in the starting stage of polishing, but this speed becomes slowly after removal ladder height.
Meanwhile, for the polishing composition of the zone of oxidation on semiconductor substrate, the open No.2005-4051 of Korean Patent discloses containing the paste compound of cerium dioxide as abrasive, carboxylic acid or its salt and alkylol cpd; The open No.2004-16154 of Korean Patent disclose comprise metal oxide abrasive grains, remove rate enhancing agent, molecular weight is 1,000-100, the anionic polymer passivation agent having of 000 and there is the aqueous solution of negatively charged ion passivator of 1-12 carbon atom, but these are all the polishing slurries for the preparation of STI (shallow-trench isolation), have highly selective to the ratio of zone of oxidation and nitride layer.
For the additive in the polishing composition due to the zone of oxidation on semiconductor substrate, there is film forming function, or therefore there is the polishing composition of automatic hold function, the open No.2001-7534 of Korean Patent discloses a kind of CMP method, and it comprises the abrasive grains that surface potential is adjusted to negative value and the tensio-active agent be made up of water-soluble polymers; The open No.1996-5827 of Korean Patent discloses a kind of CMP method; it uses and includes the abrasive of organic compounds, described organic compound have at least one be selected from COOH (carboxyl) and COOM1 (M1 be atom or can with the functional group of the hydrogen atom generation substitution reaction salify in the hydrogen atom of alkylsulfonyl or carboxyl) and molecular weight be at least 100 hydrophilic radical.The open No.1998-63482 of Korean Patent discloses a kind of polishing composition, its also comprise ionic portions and abrasive grains electrically charged different polyelectrolyte, its molecular weight is about 500-about 10,000, and its concentration accounts for the about 5-50% of abrasive grains weight; But the automatic hold function gone out shown by conventional polishing composition can not be applied to semiconductor manufacturing significantly and produce.
The open No.2003-53138 of Korean Patent discloses a kind of polishing composition, it comprises fumed silica and/or colloid silica, pH adjusting agent, fluorine cpd, phosphoric acid salt anionic additive, amines additives as trolamine, oxygenant and water, but this polishing composition does not show the automatic hold function desired by the present invention, and the composition of supplementary component is not identical yet.
Summary of the invention
technical problem
The present inventor finds, containing amino alcohol (as trolamine (TEA) and 2-dimethylin-2-methyl isophthalic acid-propyl alcohol (DMAMP)), or hydroxyl and carboxyl sum are at least the composition of the hydroxycarboxylic acid of 3, after the roughness (unevenness) removing the zone of oxidation on semiconductor substrate, show excellent automatic hold function, and when hydroxycarboxylic acid and amino alcohol use simultaneously, described automatic hold function improves further, achieves the present invention.
Therefore, the object of this invention is to provide and remove the polishing composition of ladder height fast in the starting stage, to those, there is very large ladder height, the polished layer that surface irregularity is serious, quick removal bossing, and polishing sunk part hardly, and after removing ladder height, remove speed and greatly reduce therefore polishing and automatically stop.Another object of the present invention is to provide the polishing composition with automatic hold function, to shorten the vapor deposition times of polished layer, saves deposition material, shortens the chemical-mechanical polishing time, and save the slurry used.
technical scheme
The present invention relates to for the chemical-mechanical polishing composition in planarization process, its by being made up of silicon-dioxide in fast polishing semiconductor device processing technology, roughness is serious and the pattern silicon chip that has with high ladder height realizes leveling, and use this polishing composition for the method for chemical-mechanical polishing, particularly there is the composition of automatic hold function, it is providing high ladder height to remove speed at the beginning, but after removal ladder height realizes leveling, remove speed greatly to reduce, it is characterized in that it contains:
I) metal oxide abrasive grains; With
Ii) at least one is selected from the compound in group below: the hydroxycarboxylic acid that the amino alcohol that chemical formula 1 represents, chemical formula 2 represent or its salt, or its mixture;
Chemical formula 1:R
1-N (R
2)-A-OH
Chemical formula 2:(OH)
n-R-(COOH)
m
Wherein, A represents the straight chain or branched alkylene (alkylene) with 2-5 carbon atom, R
1and R
2represent hydrogen independently of one another or there is containing or not containing the substituent straight chain of-OH or branched-chain alkyl of 1-5 carbon atom, R represents the straight chain or branched alkylidene, the ring alkylidene group with 5-7 carbon atom, the phenylene with 7-9 carbon atom or sub-aralkyl with 1-6 carbon atom, n and m represents the integer being not less than 1 separately, and n+m is not less than 3.
Polishing composition according to the present invention contains the chemical substance that can realize automatically stopping polishing, and it suppresses polishing by being adsorbed in zone of oxidation.When using polishing composition polishing according to the present invention to have the zone of oxidation of high ladder height, its bossing is subject to stronger physical pressure in the polishing starting stage, therefore the polishing performance of abrasive grains plays strong effect, and at sunk part, the automatic stopping agent being adsorbed on polished layer forms film to suppress polishing on polished layer, obviously reduces and removes speed.Along with the carrying out of polishing, the ladder height between bossing and sunk part diminishes, and reduces.Now, the effect of the polishing inhibition layer that polished layer is formed is greater than physics polishing action due to the reason of pressure, therefore significantly reduces and removes speed.
Abrasive grains containing with good grounds polishing composition of the present invention is selected from silicon-dioxide, cerium dioxide, zirconium white and aluminum oxide.Preferred use cerium dioxide; because it has very high removal speed on the silica containing surface of bag (such as glass or semiconductor substrate); be conducive to the polishing of semiconductor substrate, although the hardness of cerium dioxide is lower than silica dioxide granule or alumina particle.The cerium dioxide that the present invention uses, by atmosphere, prepares at the temperature lower calcination cerous carbonate hydrate of 600-900 DEG C.
The content of abrasive grains is important for providing enough ladder heights to remove speed, and its consumption can change according to required removal speed, because according to the difference of grain type, identical content may produce different removal speed.When abrasive grains is cerium dioxide, its content is 0.1-20 % by weight, is preferably 0.5-5 % by weight, is more preferably 1-3 % by weight.Lower content may reduce removes the speed of ladder height, and high-content may cause polishing defect and reduce the automatic hold function of polishing.Consider cut and remove speed, it is 50-500nm that cerium dioxide abrasive grains is preferably dimensioned to be second particle diameter in dispersion liquid, is more preferably 80-300nm.Particle size is less, removes speed lower; Particle size is larger, and polishing defect occurrence frequency is larger.
Polishing composition according to the present invention contains that polishing stops agent automatically, at least one is selected from compound in group below: the hydroxycarboxylic acid that the amino alcohol that chemical formula 1 represents, chemical formula 2 represent and salt thereof or their mixture:
Chemical formula 1:R
1-N (R
2)-A-OH
Chemical formula 2:(OH)
n-R-(COOH)
m
Wherein, A represents the straight chain or branched alkylene with 2-5 carbon atom, R
1and R
2represent hydrogen independently of one another or there is having or not containing the substituent straight chain of-OH or branched-chain alkyl of 1-5 carbon atom, R represents the alkylidene group of straight chain or the side chain with 1-6 carbon atom, the ring alkylidene group with 5-7 carbon atom, the phenylene with 7-9 carbon atom or sub-aralkyl, n and m represents the integer being selected from 1-7 separately, and n+m is not less than 3.
The compound that chemical formula 1 represents is exemplified as: trolamine, 2-dimethylamino-2-methyl isophthalic acid-propyl alcohol, 1-amino-2-propyl alcohol, 1-dimethylamino-2-propyl alcohol, 3-dimethylamino-1-propyl alcohol, 2-amino-1-propyl alcohol, 2-dimethylamino-1-propyl alcohol, 2-diethylamino-1-propyl alcohol, 2-diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1-(dimethylamino)-2-propyl alcohol, diethanolamine, N methyldiethanol amine, N-propyl group diethanolamine, N-isopropyldiethanolamine, N-(2-first propyl group) diethanolamine, N-n-butyldiethanolamine, N-tertiary butyl thanomin, N-cyclohexyldi, N-dodecyl diethylamide, 2-(dimethylamino) ethanol, 2-DEAE diethylaminoethanol, 2-dipropyl cholamine, 2-fourth cholamine, the tertiary fourth cholamine of 2-, 2-ring cholamine, 2-amino-2-amylalcohol, 2-[two (2-hydroxyethyl) is amino]-2-methyl isophthalic acid-propyl alcohol, 2-[two (2-hydroxyethyl) is amino]-2-propyl alcohol, N, N-bis-(2-hydroxypropyl) thanomin, 2-amino-2-methyl-1-propanol, three (methylol) ammonia methane (Trizma) and tri-isopropanolamine (TIPA), and this compound can be used alone or combinationally uses.
The amino alcohol compound with chemical formula 1 expression comprised in the polishing composition of the automatic Stopping Ability of polishing is preferably: trolamine, 2-dimethylamino-2-methyl isophthalic acid-propyl alcohol, three (methylol) aminomethanes or tri-isopropanolamine or their mixture.
Amino alcohol is the compound simultaneously with amidine functional group and hydroxy functional group, and the former has wetting ability and alkalescence, and the latter can form hydrogen bond, and described amino alcohol is adsorbed in zone of oxidation surface, for suppressing the polishing action under low pressure.It is generally acknowledged that why demonstrating this performance is because silicon dioxide layer has negative zeta electromotive force, and amino alcohol molecule is easy to positively charged within the scope of the very wide pH of weak base, neutrality and acid pH, therefore has gravitation between the two.
Content and the size of abrasive grains is depended on according to amino alcohol consumption suitable in polishing composition of the present invention, and the content of other component and pH value.The content that can show two-forty and the automatic stopping polishing performance removing ladder height is 0.5-15 % by weight, is preferably 1-10 % by weight, is more preferably 2-6 % by weight.If automatically stop the content of agent too low, automatic hold function is weak, and if too high, then the speed of removing ladder height reduces the polishing starting stage.
The compound that chemical formula 2 represents is the hydroxycarboxylic acid that carboxyl and total hydroxy are at least 3.As automatic stopping agent according to the present invention, can containing being selected from described hydroxycarboxylic acid or its salt, or the compound of their mixture.
The salt of the hydroxycarboxylic acid represented by chemical formula 2, is combined to form by described hydroxycarboxylic acid and monovalent cation or divalent cation.The example of described monovalent cation comprises K, NH
4with primary, secondary, uncle and quaternary ammonium cation such as NR
4(R: hydrogen or C1 ~ C7 alkyl), described divalent cation comprises Ca, Mg, Cu etc.
According to the present invention, the compound being selected from hydroxycarboxylic acid and salt or their mixture is preferably the compound that COOH and OH sum is at least 3 (being more preferably at least 4).When the sum of COOH and OH is less than 3, removes difference between the speed of ladder height and the removal speed of flat board little, therefore substantially can not obtain automatic hold function.
Hydroxycarboxylic acid according to the present invention comprises gluconic acid, glucoheptonic acid, citric acid, tartrate, oxysuccinic acid, citromalic acid, ketone propanedioic acid (ketomalonicacid), dimethylol propionic acid, dihydroxy ethyl propionic acid, dimethylolpropionic acid, dihydroxy ethyl butyric acid, R-Glyceric acid, glactaric acid, saccharic acid, quinic acid, pentonic acid (pentaricacid), 2,4-resorcylic acids, gallic acid etc.This hydroxycarboxylic acid can be used alone or combinationally uses.
According to the present invention, the content being selected from the compound of hydroxycarboxylic acid, its salt or their mixture is 0.01-15 % by weight, is preferably 0.05-10 % by weight, is more preferably 0.1-5 % by weight.If automatically stop the content of agent too low, automatic hold function is weak, if but too high, then the speed reduction of ladder height is removed in the starting stage.
In order to realize the automatic hold function strengthened, preferably comprising according to polishing composition of the present invention and being selected from the hydroxycarboxylic acid of chemical formula 2 expression or the compound of its salt or their mixture, and the amino alcohol that chemical formula 1 represents.Preferred amino alcohol compound comprises trolamine, diethanolamine, monoethanolamine, 2-dimethylamino-2-methyl isophthalic acid-propyl alcohol, three (methylol) aminomethanes or tri-isopropanolamine or their mixture.When amino alcohol shares with the compound being selected from hydroxycarboxylic acid and salt or their mixture, the content of amino alcohol is 0.01-10 % by weight, is preferably 0.05-5 % by weight, is more preferably 0.1-3 % by weight.If the content of amino alcohol is too low, then automatic hold function is weak, if but too high, then the speed removing ladder height reduces.
Polishing composition according to the present invention, except described metal oxide abrasive grains with except automatically stopping agent, if needed, also comprises pH adjusting agent, quaternary ammonium compound, tensio-active agent, lubricant, polymeric organic acid, sanitas etc.The present invention suppresses dull and stereotyped combination of removing the performance of speed to realize by the polishing performance of abrasive grains with automatically stopping agent.
The polishing composition according to the present invention with automatic Stopping Ability can work within the scope of wide pH, if but pH is too low or too high, and the speed of removal ladder height will reduce or Stopping Ability weakens automatically.Preferred pH scope is 4-11, is more preferably 5-8.For the pH adjusting agent regulating pH, anyly be selected from mineral acid (such as nitric acid, hydrochloric acid, sulfuric acid, perchloric acid) or organic acid, or any inorganic or organic bases all can use, it can regulate the pH value of composition and not have detrimentally affect to the performance (comprising the two-forty and automatic hold function of removing ladder height) of polishing composition.
Can also comprise quaternary ammonium salt according to the polishing slurries for semiconductor production of the present invention, it is selected from ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, hydroxide tetrapropyl hydrogen, tetrabutylphosphoniuhydroxide hydroxide amine etc.Described quaternary ammonium salt is also as sanitas or pH adjusting agent, and its consumption is 0.01-10 % by weight, is more preferably 0.1-5 % by weight.
The tensio-active agent and lubricant that help lubricating function can be added with.Owing to having the cats product of high molecular, the problem of fast deposition may be caused when mixing with cerium dioxide dispersion liquid, therefore advantageously using anionic and nonionic surface active agent.The example of lubricant comprises glycerine and ethylene glycol.The consumption of tensio-active agent is 0.0001-0.5 % by weight, preferred 0.001-0.1 % by weight.The consumption of lubricant is 0.01-10 % by weight, is preferably 0.1-5 % by weight.
Polymeric organic acid removes the speed of ladder height for improving.The water-soluble polymers with acidic-group can as polymeric organic acid.Preferred use polyacrylic acid or acrylic copolymer or their mixture.Commercial polypropylene acid product often not about the information of molecular weight, and is sold usually in form of an aqueous solutions, and the polyacrylic acid content therefore in each product is all not identical.According to the present invention, the 2.5% aqueous polyacrylic acid solution that use viscosity is 0.8-20cps is as the additive of polished semiconductor slurry.Such as, the present invention use 2.5% the polyacrylic acid aqueous solution, to polyacrylic acid L, soltion viscosity is 1.67cps, and to polyacrylic acid S (being produced by NipponZunyakuKabushikikaisha), soltion viscosity is 1.21cps.The content of polymeric organic acid is preferably 0.1-10 % by weight, is more preferably 0.3-5 % by weight.If the content of polymeric organic acid is too low, then the effect improving ladder height removal speed is low, but if too high, this removal speed reduces on the contrary.
For polyacrylic acid, if use the mixture of low viscous polyacrylic acid S and full-bodied polyacrylic acid L can obtain excellent effect, and low viscosity polyacrylic acid and the polyacrylic content ratio of high viscosity are preferably 5-95 % by weight: 95-5 % by weight.
When only using low viscosity polyacrylic acid, the ladder height removal speed of polishing starting stage is often lower, and when only using high viscosity polyacrylic acid, the speed removing ladder height is high, but the removal speed removed after ladder height uprises and reduces automatic hold function.
Polishing composition according to the present invention is made up of organic acid, therefore due to the erosion of microorganism or bacterium, apparent change may occur.In order to avoid this damage, sanitas can be used.Any sanitas that can suppress erosion to paste compound component according to the present invention, all can use.Iso thiazolinium compound can be used as this sanitas, preferred CMIT, MIT or NEOLONE 950.If if the content of sanitas is too low, then preservative effect is weak, but too high, then suppresses the performance as abrasive.
The amino alcohol that contains according to the present invention is as automatically stopping agent, the preferred polishing composition with automatic hold function comprises based on polishing composition gross weight, the metal oxide abrasive grains of 0.1-20 % by weight, the amino alcohol compound of 0.5-15 % by weight or their mixture, more preferably, described polishing composition comprises based on rumbling compound gross weight, the amino alcohol compound that the metal oxide abrasive grains of 0.5-5 % by weight, the chemical formula 1 of 1-10 % by weight represent or their mixture, and pH is in the scope of 4-11, particularly 5-8.As another kind of polishing composition, most preferably comprise the cerium dioxide of 1-3 % by weight, the trolamine of 2-6 % by weight and the polyacrylic acid of 0.1-10 % by weight, and pH is in the scope of 5-8.
Preferred polishing composition containing hydroxycarboxylic acid or its salt according to the present invention comprises based on polishing composition gross weight, the metal oxide abrasive grains of 0.1-20 % by weight, the compound being selected from hydroxycarboxylic acid and salt or their mixture of 0.01-15 % by weight, more preferably, described polishing composition comprises based on rumbling compound gross weight, the metal oxide abrasive grains of 0.5-5 % by weight, the compound being selected from hydroxycarboxylic acid and salt or their mixture of 0.05-10 % by weight, and pH is in the scope of 4-11, more preferably pH is in the scope of 5-8.
According to of the present invention containing hydroxycarboxylic acid or its salt and amino alcohol, the preferred polishing composition with automatic hold function contains based on polishing composition gross weight, the amino alcohol that the metal oxide abrasive grains of 0.1-20 % by weight, the chemical formula 1 of 0.01-10 % by weight represent or their mixture, and hydroxycarboxylic acid, its salt or their mixture that the chemical formula 2 of 0.01-15 % by weight represents, and pH is in the scope of 4-11.Preferred polishing composition contains based on its gross weight of rumbling compound, the amino alcohol of the cerium dioxide of 0.5-5 % by weight, the compound being selected from hydroxycarboxylic acid and salt or their mixture of 0.05-10 % by weight and 0.05-5 % by weight, and pH is in the scope of 5-8.Most preferred composition comprises based on polishing composition gross weight, the trolamine of the cerium dioxide of 1-3 % by weight, the gluconic acid of 0.1-5 % by weight or its salt and 0.1-3 % by weight, and pH is in the scope of 5-8.
Automatic stopping polishing slurries according to the present invention can be used for the layer in semiconductor fabrication and has the leveling of silicon dioxide layer of high ladder height, the layer in described semiconductor fabrication can be formed the automatic stopping polishing layer of composition of the present invention.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of the semiconductor substrate with high ladder height;
Fig. 2 shows the mean thickness of bossing and sunk part and the relation of polishing time, as the result according to embodiments of the invention 7;
Fig. 3 shows the change with live width (pitch) and pattern density, and the variation in thickness of bossing before and after polishing, as the result according to embodiments of the invention 7;
Fig. 4 shows the mean thickness of bossing and sunk part and the relation of polishing time, as the result according to embodiments of the invention 14;
Fig. 5 shows the change with live width (pitch) and pattern density, and the variation in thickness of bossing before and after polishing, as the result according to embodiments of the invention 14.
The description of vitals in accompanying drawing
10-base material
20-line pattern (wiringpattern) or electrical condenser
30-insulation layer
31-bossing
32-sunk part
The polishing stop surface that 33-is desirable
Embodiment
Referring to embodiment to structure of the present invention and effect for a more detailed description, but these embodiments do not form limitation of the scope of the invention.
embodiment 1
Cerous carbonate hydrate is calcined in atmosphere at 750 DEG C 4 hours to prepare cerium dioxide.Add deionized water and a small amount of dispersion agent wherein, and use medium stirring-type (media-agitatingtype) powder pulverizer to pulverize and after dispersion, finally add deionized water wherein to obtain the cerium dioxide dispersion liquid that solids content is 5%.Particle size in described dispersion liquid is 140nm, and pH value is 8.4.As the additive with automatic hold function, by mixing trolamine and other ethanol, and nitre acid for adjusting pH is used to prepare interground addition.The additive obtained like this is mixed with the dispersion liquid of abrasive grains and prepares abrasive.In addition, nitric acid is not used to prepare separately a kind of abrasive (experiment numbers 1-1 and 1-2) as pH value regulator.The concentration keeping cerium dioxide is 1%, and the add-on of amino alcohol and pH value be change as shown in table 1 then, prepares abrasive.
The base material used in chemical-mechanical polishing process is by the obtained base material of plasma CVD method, described CVD is coated with the tetraethoxysilane (TEOS) of silicon dioxide layer above using, and form different live widths and the pattern of density on Si base material, and vapour deposition thickness about 20000
silicon dioxide layer, the unfairness partial step height about 7000 of described silicon dioxide layer
.In addition, in order to study the removal speed after removing ladder height, the vapour deposition wafer of silicon dioxide layer has been prepared with same method.Polishing in the CMP equipment that each base material manufactures at G & PTech., when abrasive disk and grinding head rotating speed are respectively 93rpm and 87rpm, regulates pressure to 300g/cm
2.Through polishing, in abrasive, the content of cerium dioxide is 1%, and feeding rate is 200 ml/min.Remove the speed of ladder height, wafer removes speed and remove speed ratio (speed/wafer removing ladder height removes speed) display in Table 1:
Table 1
As can be seen from Table 1, when only using cerium dioxide without (comparative example 1-1) during trolamine polishing, remove the removal speed of speed lower than wafer of the ladder height of the wafer of patterning, but in experiment 1-1,1-2, only add amino alcohol in addition, remove the removal speed after ladder height, namely wafer removal speed reduces greatly, increases the ratio of the removal speed of the speed/wafer removing ladder height.In experiment 1-3 to 1-10, use nitre acid for adjusting pH, the removal speed of wafer reduces greatly, but the speed removing ladder height increases greatly, greatly increases both speed ratios compared with comparative example 1-1.
Can also recognize, along with the increase of trolamine add-on, the removal rate reduction of wafer, if but exceed a certain amount of, then remove speed and remain on low-down level.PH scope shows excellent automatic hold function when 4-11.
The meaning of the result of embodiment 1 is, the removal speed of polishing composition according to the present invention after the ladder height removing figuratum base material adding amino alcohol reduces greatly, shows the automatic hold function of polishing.
embodiment 2
For research adds the effect of polyacrylic acid (PAA), evaluate by changing add-on.Prepare abrasive by the step identical with embodiment 1, but add polyacrylic acid, pH is stable is adjusted to 6.9.
The concentration of polyacrylic acid and trolamine is as shown in table 2, and identical with embodiment 1 of polishing condition.The polyacrylic acid added is the product of NipponZunyaku, is 3/7w/w (L/S) mixture of polyacrylic acid L (viscosity of the aqueous solution of 2.5% is 1.67cps) and polyacrylic acid S (viscosity is 1.21cps).
Remove the speed of ladder height, the removal speed of wafer of pattern, and removal speed ratio shows in table 2 relative to the change of trolamine and polyacrylic add-on.
Table 2
As can be seen from Table 2, when polyacrylic concentration carries out polishing in change interground addition, add polyacrylic acid and improve the speed removing ladder height.Adding in polyacrylic situation again in the trolamine of 2.1%, the speed removing ladder height significantly increases, and the removal speed of wafer then reduces, and causes speed ratio to increase.Can recognize, along with the increase of the amount of polyacrylic acid and trolamine, remove speed ratio (speed/wafer removing ladder height removes speed) and increase.
embodiment 3
In order to study the dependence between the amount of trolamine and polyacrylic amount, when polishing condition is in the same manner as in Example 1, polishing is carried out by the preparation composition abrasive identical with the abrasive in embodiment 2, but the polyacrylic concentration added is 1% and 1.5%, the amount of change trolamine as shown in table 3:
Table 3
From the results shown in Table 3, when adding polyacrylic amount and being constant, along with the increase of the amount of trolamine, the removal speed of wafer sharply reduces, but the ratio removing the speed of ladder height and the removal speed of wafer is tending towards increasing.If add 2.1% or more trolamine, the removal speed of wafer then obviously declines, and after therefore removing ladder height, polishing stops automatically.
embodiment 4
In order to study the impact of polyacrylic acid molecular weight on automatic hold function, the polyacrylic acid that two kinds have different viscosity is mixed, as shown in table 4, and add trolamine wherein to prepare the interground addition that pH is 6.9.After being mixed with described interground addition by ceria sizing agent, obtaining ceria content is 1%, and polyacrylic acid content is 1.3%, and trolamine content is the polishing composition of 2.2%, under the condition identical with previous embodiment, carry out polishing.
Table 4
From the results shown in Table 4, if polyacrylic viscosity low (low average molecular weight), the removal speed of wafer reduces, provide excellent automatic hold function, and when using a large amount of high viscosity polyacrylic acid, ladder height remove after removal speed (i.e. wafer removal speed) increase a little.This result confirms, according to polishing object, and can by suitably mixing low viscosity polyacrylic acid and high viscosity polyacrylic acid to obtain the best joint of two kinds of performances (remove ladder height and automatically stop).
embodiment 5
Use polishing condition same as described above, measure and remove the speed of ladder height and the removal speed of wafer, but in polishing composition, the concentration of cerium dioxide is 1.0% and 1.5%, and the amount of change polyacrylic acid as shown in table 5 and trolamine; And calculate removal speed ratio (removing the removal speed of the speed/wafer of ladder height).
Table 5
As can be seen from Table 5, when the concentration of cerium dioxide is raised to 1.5% from 1.0%, remove the speed increase at least 1000 of ladder height
/ minute, and speed ratio does not significantly change.This means that the increase of cerium oxide concentration is conducive to the process that requirement height ladder height removes speed.
embodiment 6
In order to study the effect of other additive, as shown in table 6, the derivative of amino alcohol and/or ammonium hydroxide is mixed with polyacrylic acid, and with nitric acid, pH is adjusted to 6.9.Often kind of abrasive is mixed, makes it have the cerium dioxide of 1% and the polyacrylic acid concentration of 1.5%, to prepare polishing composition, measure under polishing condition in the same manner as in Example 1 and remove the speed of ladder height and the removal speed of wafer.
Table 6
As can be seen from Table 6, when in described composition containing amino alcohol time, the automatic hold function removing the speed of ladder height and polishing follow-up phase is good.In addition, notice, when in described composition only containing Tetramethylammonium hydroxide (TMAH) as quaternary ammonium salt or when combine with amino alcohol, the speed of removal ladder height and the automatic hold function of polishing follow-up phase good.
embodiment 7
In order to study live width and pattern density [bossing area/(sunk part area+bossing area)] to the effect having patterned wafers, have rated there is different live width and pattern density have patterned wafers.Fig. 2 shows the change of mean thickness relative to polishing time of sunk part and bossing.Silica slurry is the conventional slurry for polishing silicon dioxide layer in semiconductor fabrication process, and it contains the silicon-dioxide of 11%.Slurry A by the cerium dioxide of 1%, the polyacrylic acid (L/S=3/7) of 1.5% and 2.52% the polishing composition that forms of trolamine, slurry B by the cerium dioxide of 1.5%, the polyacrylic acid (L/S=3/7) of 1.7% and 2.38% the polishing composition that forms of trolamine.The polishing condition of these slurries and the identical of embodiment 1.Can find that, when using silica slurry, after removing ladder height, thickness of insulating layer also reduces rapidly, but slurry A and slurry B is then after removal ladder height (namely after leveling), the speed reducing thickness of insulating layer is much smaller.
In addition, after polishing 180 second, how the thickness that have evaluated bossing is subject to the impact of live width and pattern density.The result display of Fig. 3, the thickness before polishing is identical, and not because live width and pattern density have any change, and the silica slurry after polishing does not receive leveling effect owing to relying on the height of live width and pattern density.On the other hand, when slurry A composition and composition B, achieve excellent planarization effects, only reduce only about half of thickness simultaneously.
embodiment 8
Prepare cerium dioxide dispersion liquid according to the description of embodiment 1, hydroxycarboxylic acid listed in use table 7 as the additive with automatic hold function, and with KOH and nitre acid for adjusting pH to 6.9.The amount preparing the hydroxycarboxylic acid of each abrasive is as shown in table 7, but keeps the concentration of cerium dioxide to be 1.5% constant.Base material and polishing condition are with described in embodiment 1.Table 7 shows to be removed the speed of ladder height, the removal speed of wafer and removes speed ratio (speed/wafer removing ladder height removes speed).
Table 7
As can be seen from Table 7, when comparative example 7-1, only use the polishing of cerium dioxide abrasive grains, in comparative example 7-2 and comparative example 7-3, with the CMP slurry material polishing comprising the lactic acid with a carboxyl and a hydroxyl, remove the removal speed of speed far below wafer of ladder height.When employing polyvalent alcohol (such as Xylitol) (comparative example 7-4 and comparative example 7-5) only containing hydroxyl, the removal speed of wafer is high, and does not show automatic hold function.This confirms, the speed that result in removal ladder height that adds that hydroxyl and carboxyl sum are at least the hydroxycarboxylic acid of 3 increases, the removal speed of wafer reduces, and therefore improves speed ratio (speed/wafer removing ladder height removes speed), obtains automatic hold function.In hydroxycarboxylic acid listed by table 7, the effect obtained from citric acid and gluconic acid (COOH and OH sum is at least 4) is more excellent.
embodiment 9
Identical with embodiment 8, use ceria content is the cerium dioxide dispersion liquid of 1.5%, and evaluates polishing performance by the mode identical with embodiment 8.Result is as shown in table 8.
Amino alcohol is added in hydroxycarboxylic acid or its salt, as the additive having automatic hold function, if needed, regulate pH to 6.9 with nitric acid or TMAH or KOH.When adding sanitas, lubricant or tensio-active agent, use NEOLONE 950 as sanitas, glycerine or ethylene glycol are as lubricant, and ZonylFSN (Dupont) is as tensio-active agent.
In table 8, TEA represents trolamine, and PAA represents polyacrylic acid mixture (viscosity of L/S=3/7, the L:2.5% aqueous solution is the viscosity of 1.67cps, the S:2.5% aqueous solution is 1.21cps).
Table 8
When adding TEA together with hydroxy organic acid, wafer is removed speed and is significantly reduced, and causes the ratio of the removal speed of the speed/wafer removing ladder height to increase, confirms that adding of amino alcohol has synergy to automatic hold function.When part of hydroxyl carboxylic acid is replaced by PAA, the speed removing ladder height increases, and finds, if needed, when not destroying polishing performance, can also use tensio-active agent, water-soluble polymers, lubricant and sanitas.When using acetic acid, succsinic acid and lactic acid, the ratio removing speed/wafer removal speed of ladder height is low, but from hydroxyl and carboxyl sum are at least the oxysuccinic acid of 3, speed ratio increases suddenly, substantially increase automatic hold function, demonstrate excellent high ladder height and remove speed.
embodiment 10
The amount changing citric acid and the trolamine added carries out chemical-mechanical polishing, and evaluates.Containing the cerium dioxide of 1.5 % by weight in the abrasive used, if needed, with nitric acid or KOH by pH regulator to 6.9.Rumbling compound is prepared according to the step identical with embodiment 8.
Polishing is being carried out with under the identical polishing condition described in embodiment 1.Relative to the amount of additive, remove the speed of ladder height, wafer removes speed and pattern removes the ratio display of speed in table 3.Observe the surface appearance of wafer and according to the occurrence rate of unfairness flaw, it made an appraisal: zero: good, △: in, ×: poor.
Table 9
When the citric acid and trolamine (as amino alcohol) with three carboxyls and a hydroxyl combinationally use, the ratio removing speed/wafer removal speed of ladder height is 3.8 or higher, demonstrates automatic hold function.Specifically, when the content of citric acid be 0.3 % by weight or larger time, the ratio that the speed/wafer removing ladder height removes speed is high, and the flaw that the wafer surface observed occurs reduces, and is conducive to obtaining uniform surface.
In addition, when the amount of hydroxycarboxylic acid and amino alcohol increases, the removal speed of wafer reduces, and facilitates automatic hold function, and reducing of wafer surface flaw, provide uniform surface.
embodiment 11
Carry out polishing after changing the amount of gluconic acid and the trolamine added, and evaluate.Abrasive contains the cerium dioxide of 1.5 % by weight, and regulates pH to 6.9.Polishing composition is prepared according to the same steps described in embodiment 1.
Polishing is carried out under the polishing condition identical with embodiment 8.Remove the speed of ladder height, the removal speed of wafer and the removal speed of pattern and the amount of additive relation as shown in table 10.Observe the surface appearance of wafer and according to the occurrence rate of unfairness flaw, it made an appraisal: zero: good, △: in, ×: poor.
Table 10
When the gluconic acid and trolamine (as amino alcohol) with a carboxyl and five hydroxyls combinationally use, the speed removing ladder height is high, but the removal speed of wafer is low, shows excellent automatic hold function.When the content of gluconic acid is 0.18 % by weight, there is small flaw in wafer surface, therefore when the content of gluconic acid be 0.3 % by weight or larger time more preferably.
Can find from the above results, if the amount of hydroxycarboxylic acid and amino alcohol increases, the removal speed of wafer reduces, and enhances automatic hold function, and flaw incidence reduces to and can provide uniform surface on the surface.But, if the concentration of gluconic acid is too high, then may reduces and remove the speed of ladder height and unfavorable, and if too low, then may produce flaw in wafer surface.
embodiment 12
The step described according to embodiment 8 prepares polishing composition, but comprises cerium dioxide, the gluconic acid of 0.3 % by weight, the TEA of 1 % by weight of 1.5 % by weight.The scope shown in pH to table 11 is regulated with nitric acid or KOH.
Table 11
Can see from the result that table 11 shows, within the scope of the pH specified, the ratio that all removal ladder height speed/wafer removes speed is all not less than 10.If pH is low, find the removal rate reduction of wafer, automatic hold function strengthens, but the speed removing ladder height also reduces.On the other hand, if pH is high, find that the speed removing ladder height advantageously increases, but the removal speed of wafer also increases.Therefore, pH scope is confirmed at 5-8 more preferably.
embodiment 13
As shown in table 12, change the content of cerium dioxide, the same steps described according to embodiment 8 evaluates polishing character.Polishing composition comprises the gluconic acid of 0.3% and the TEA of 1%, and pH regulator to 6.9.
Table 12
The result shown from table 12 can be seen, the removal speed of ladder height and the removal speed of wafer increase along with the increase of cerium oxide concentration, and the ratio that the speed/wafer removing ladder height removes speed is also higher, shows good automatic hold function.
embodiment 14
In order to study live width and pattern density to the effect having patterned wafers, under the condition that embodiment 7 describes, polishing has patterned wafers.Fig. 4 shows the change of sunk part and bossing mean thickness and the relation of polishing time.Slurry C by the cerium dioxide of 1.5%, the gluconic acid of 0.3% and 1.0% the polishing composition that forms of trolamine, and slurry D by the cerium dioxide of 1.5%, the tartrate of 0.5% and 1.0% the polishing composition that forms of trolamine.Research finds, when using silica slurry, the thickness of insulation layer reduces rapidly after removal ladder height, but the speed that slurry C and D after removing ladder height (namely after leveling) remove insulation layer is then much lower.
In addition, polishing is after 180 seconds, when studying the relation of live width and the effect of pattern density and the thickness of bossing (Fig. 5), prove, very large dependency is there is between silica slurry and live width or pattern density, but the dependency between rumbling compound C and D composition and live width or pattern density is less, and the minimizing of its thickness is less.
industrial usability
Polishing composition according to the present invention removes ladder height when polishing has the polished layer of high ladder height, and has low-down removal speed after removal ladder height, provides automatic hold function.Therefore, the present invention have shorten polished layer vapor deposition times, save deposition starting material, shorten the chemical-mechanical polishing time, save the slurry that uses and guarantee the effect of process redundancy.The present invention is conducive to saving material cost and treatment time, thus improves output and productivity.
Claims (17)
1., for the chemical-mechanical polishing composition with automatic hold function of polishing height ladder high oxidation silicon layer, it is made up of following material:
I) the metal oxide abrasive grains of 0.1-20 % by weight;
Ii) hydroxycarboxylic acid of the amino alcohol of chemical formula 1 expression of 0.01-10 % by weight and chemical formula 2 expression of 0.01-15 % by weight or the mixture of its salt are as automatically stopping agent;
Chemical formula 1:R
1-N (R
2)-A-OH
Chemical formula 2:(OH)
n-R-(COOH)
m
Wherein, A represents the straight chain or branched alkylidene with 2-5 carbon atom, R
1and R
2represent hydrogen independently of one another or there is 1-5 carbon atom and contain or do not contain the substituent straight chain of-OH or branched-chain alkyl, R represents the straight chain or branched alkylidene, the ring alkylidene group with 5-7 carbon atom, the phenylene with 7-9 carbon atom or sub-aralkyl with 1-6 carbon atom, n and m represents the integer being not less than 1 separately, and n+m is not less than 3
Iii) based on the gross weight of described polishing composition, the polymeric organic acid of 0.1-10 % by weight, and
One or more of optional existence are selected from the component of pH adjusting agent, quaternary ammonium salt, tensio-active agent and lubricant.
2. the chemical-mechanical polishing composition with automatic hold function according to claim 1, based on the gross weight of polishing composition, its amino alcohol represented by the metal oxide abrasive grains of 0.5-5 % by weight, the chemical formula 1 of 1-10 % by weight or their mixture, and the polymeric organic acid composition of 0.1-10 % by weight, and the pH of described composition is 4-11.
3. the chemical-mechanical polishing composition with automatic hold function according to claim 1, based on the gross weight of polishing composition, it is by the polymeric organic acid of the metal oxide abrasive grains of 0.5-5 % by weight, amino alcohol that the chemical formula 1 of 0.01-10 % by weight represents, 0.1-10 % by weight, the hydroxycarboxylic acid represented with the chemical formula 2 of 0.01-15 % by weight or its salt or their mixture composition, and the pH of described composition is 4-11;
Chemical formula 2:(OH)
n-R-(COOH)
m
Wherein, R represents the straight chain or branched alkylidene, the ring alkylidene group with 5-7 carbon atom, the phenylene with 7-9 carbon atom or sub-aralkyl with 1-6 carbon atom, n and m represents the integer of 1-7 separately, and n+m is not less than 4.
4. the chemical-mechanical polishing composition with automatic hold function according to claim 3, it is characterized in that described hydroxycarboxylic acid is selected from: gluconic acid, glucoheptonic acid, citric acid, tartrate, oxysuccinic acid, citromalic acid, ketone propanedioic acid, dimethylol propionic acid, dihydroxy ethyl propionic acid, dimethylolpropionic acid, dihydroxy ethyl butyric acid, R-Glyceric acid, glactaric acid, saccharic acid, quinic acid, pentonic acid, 2,4-resorcylic acid, gallic acid, and their mixture.
5. the chemical-mechanical polishing composition with automatic hold function according to claim 1, is characterized in that described amino alcohol is selected from: trolamine, 2-dimethylamino-2-methyl isophthalic acid-propyl alcohol, 1-amino-2-propyl alcohol, 1-dimethylamino-2-propyl alcohol, 3-dimethylamino-1-propyl alcohol, 2-amino-1-propyl alcohol, 2-dimethylamino-1-propyl alcohol, 2-diethylamino-1-propyl alcohol, 2-diethylamino-1-ethanol, 2 – ethylamino-1-ethanol, 1-(dimethylamino)-2-propyl alcohol, diethanolamine, N methyldiethanol amine, N-propyl group diethanolamine, N-isopropyldiethanolamine, N-(2-first propyl group) diethanolamine, N-n-butyldiethanolamine, N-tertiary butyl thanomin, N-cyclohexyldi, N-dodecyl diethylamide, 2-(dimethylamino) ethanol, 2-DEAE diethylaminoethanol, 2-dipropyl cholamine, 2-fourth cholamine, the tertiary fourth cholamine of 2-, 2-ring cholamine, 2-amino-2-amylalcohol, 2-[two (2-hydroxyethyl) is amino]-2-methyl isophthalic acid-propyl alcohol, 2-[two (2-hydroxyethyl) is amino]-2-propyl alcohol, N, N-bis-(2-hydroxypropyl) thanomin, 2-amino-2-methyl-1-propanol, three (methylol) aminomethane and tri-isopropanolamines, or their mixture.
6. the chemical-mechanical polishing composition with automatic hold function according to claim 5, is characterized in that described amino alcohol is selected from: trolamine, diethanolamine, monoethanolamine, 2-dimethylamino-2-methyl isophthalic acid-propyl alcohol, three (methylol) aminomethane, tri-isopropanolamine and their mixture.
7. the chemical-mechanical polishing composition with automatic hold function according to claim 1, is characterized in that described metal oxide abrasive grains is selected from: silicon-dioxide, cerium dioxide, zirconium white and aluminum oxide.
8. the chemical-mechanical polishing composition with automatic hold function according to claim 7, is characterized in that described metal oxide abrasive grains is that second particle diameter is the cerium dioxide of 50-500nm in dispersion liquid.
9. the chemical-mechanical polishing composition with automatic hold function according to claim 3, based on the gross weight of polishing composition, its amino alcohol represented by the cerium dioxide of 0.5-5 % by weight, the chemical formula 1 of 0.05-5 % by weight or their mixture, the hydroxycarboxylic acid that the chemical formula 2 of the polymeric organic acid of 0.1-10 % by weight and 0.05-10 % by weight represents or its salt or their mixture composition.
10. the chemical-mechanical polishing composition with automatic hold function according to claim 9, it is made up of as hydroxycarboxylic acid as the gluconic acid of polymeric organic acid and 0.1-5 % by weight as the polyacrylic acid of amino alcohol, 0.1-10 % by weight cerium dioxide of 1-3 % by weight, the trolamine of 0.1-3 % by weight.
11. chemical-mechanical polishing compositions with automatic hold function according to claim 1, is characterized in that described pH adjusting agent is mineral acid, organic acid, mineral alkali or organic bases.
12. chemical-mechanical polishing compositions with automatic hold function according to claim 1, its pH value is 5-8.
13. chemical-mechanical polishing compositions with automatic hold function according to claim 1, is characterized in that described quaternary ammonium salt is selected from: ammonium hydroxide, tetramethyl ammonium hydroxide, tetraethylammonium hydroxide base amine, hydroxide tetrapropyl hydrogen and tetrabutylphosphoniuhydroxide hydroxide amine.
14. chemical-mechanical polishing compositions with automatic hold function according to claim 1, is characterized in that described polymeric organic acid is polyacrylic acid or polyacrylic multipolymer.
15. chemical-mechanical polishing compositions with automatic hold function according to claim 1, it also comprises isothiazole compounds as sanitas.
16. chemical-mechanical polishing compositions with automatic hold function according to claim 14, its polyacrylic acid comprising 0.3-5 % by weight is as polymeric organic acid.
The method of 17. polishing substrates, it uses the chemical-mechanical polishing composition with automatic hold function according to any one of claim 1 to 10.
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| KR1020050035316A KR100661273B1 (en) | 2005-04-28 | 2005-04-28 | Abrasive composition for polishing of wafer |
| KR10-2005-0035316 | 2005-04-28 | ||
| KR1020050035316 | 2005-04-28 | ||
| KR10-2006-0012370 | 2006-02-09 | ||
| KR1020060012370 | 2006-02-09 | ||
| KR1020060012370A KR100762094B1 (en) | 2006-02-09 | 2006-02-09 | Abrasive composition for polishing of wafer |
| PCT/KR2006/001619 WO2006115393A1 (en) | 2005-04-28 | 2006-04-28 | Auto-stopping abrasive composition for polishing high step height oxide layer |
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| KR101406757B1 (en) * | 2012-12-24 | 2014-06-18 | 주식회사 케이씨텍 | Slurry composition and substrate or wafer polishing method using the same |
| KR101827366B1 (en) * | 2016-05-16 | 2018-02-09 | 주식회사 케이씨텍 | Slurry composition for high step height polishing |
| KR102169835B1 (en) * | 2016-06-22 | 2020-10-26 | 후지필름 가부시키가이샤 | Polishing liquid, chemical mechanical polishing method |
| CN106189873A (en) * | 2016-07-22 | 2016-12-07 | 清华大学 | A kind of polishing composition |
| EP3526298A4 (en) * | 2016-10-17 | 2020-06-24 | Cabot Microelectronics Corporation | Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity |
| CN113637412A (en) * | 2017-04-17 | 2021-11-12 | 嘉柏微电子材料股份公司 | Self-stopping polishing composition and method for bulk oxide planarization |
| CN109251676B (en) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN109251672B (en) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN109251673A (en) * | 2017-07-13 | 2019-01-22 | 安集微电子科技（上海）股份有限公司 | A kind of chemical mechanical polishing liquid |
| CN109251674B (en) * | 2017-07-13 | 2021-12-17 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN114621685A (en) * | 2020-12-11 | 2022-06-14 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and use method thereof |
| KR20220120864A (en) * | 2021-02-24 | 2022-08-31 | 에스케이하이닉스 주식회사 | Slurry composition for polishing silicone oxide film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040108302A1 (en) * | 2002-12-10 | 2004-06-10 | Jun Liu | Passivative chemical mechanical polishing composition for copper film planarization |
| US6749488B2 (en) * | 2001-04-30 | 2004-06-15 | Planar Solutions Llc | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| US20040159050A1 (en) * | 2001-04-30 | 2004-08-19 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
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| US6114249A (en) * | 1998-03-10 | 2000-09-05 | International Business Machines Corporation | Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity |
| US6299659B1 (en) * | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
| DE60014907T2 (en) * | 1999-07-13 | 2006-03-09 | Kao Corp. | ABRASIVE COMPOSITION |
| TWI228538B (en) * | 2000-10-23 | 2005-03-01 | Kao Corp | Polishing composition |
| US6740589B2 (en) * | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
| JP2005500173A (en) * | 2001-08-20 | 2005-01-06 | サムソン コーニング カンパニー，リミテッド | Abrasive slurry containing silica-coated ceria |
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| US6749488B2 (en) * | 2001-04-30 | 2004-06-15 | Planar Solutions Llc | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| US20040159050A1 (en) * | 2001-04-30 | 2004-08-19 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| US20040108302A1 (en) * | 2002-12-10 | 2004-06-10 | Jun Liu | Passivative chemical mechanical polishing composition for copper film planarization |
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