CN101216358B - Grid pressure sensing chip and preparation method, pressure distributed sensor - Google Patents
Grid pressure sensing chip and preparation method, pressure distributed sensor Download PDFInfo
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- CN101216358B CN101216358B CN200810017284XA CN200810017284A CN101216358B CN 101216358 B CN101216358 B CN 101216358B CN 200810017284X A CN200810017284X A CN 200810017284XA CN 200810017284 A CN200810017284 A CN 200810017284A CN 101216358 B CN101216358 B CN 101216358B
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Abstract
The invention discloses a grid pressure sensing chip and a preparation method thereof, and a pressure distribution sensor. The grid pressure sensing chip comprises an insulating bottom layer, an upper layer, and a row and a column electrode configuration layer arranged between the insulating bottom layer and the upper layer, wherein a plurality of row electrodes are arranged in the row electrode configuration layer; a plurality of column electrodes are arranged in the column electrode configuration layer to form a grid distribution together with the row electrodes; an intermediate layer is arranged between the row and the column electrode configuration layers; a plurality of pressure sensitive bodies are arranged in the intermediate layer just at the cross points of the row and the column electrodes; each pressure sensitive body is respectively connected with one row electrode and one column electrodes at two end faces thereof; and the insulating bottom layer, the upper layer, the row and the column electrode configuration layer and the intermediate layer integrally form a rectangular sheet. The pressure distribution sensor comprises a frame, a plurality of grid pressure sensing chip spliced in the frame, and electrode connection structures arranged on inner two sides of the frame. The inventive grid pressure sensing chip and the sensor can conveniently detect the pressure distribution on a local contact surface.
Description
Technical field
The pressure distributed sensor that the pressure distribution on a certain local surface of contact that the present invention relates to a kind of fexible film grid pressure sensing chip and preparation method, combines with this pressure sensing chip detects.
Background technology
Thereby the detection principle of pressure transducer is based on pressure sensitive and is subjected to the ambient pressure effect and causes that the elastic compression distortion changes (piezoresistive effect) its resistance, by measuring the pressure sensitive changes in resistance, measures the size of ambient pressure.Pressure transducer is widely used in fields such as Aero-Space, war industry, automobile boats and ships and health care, is bringing into play more and more important effect.Yet in some application of special occasions, need sometimes to detect, for example detect doughnut pressure distribution to ground in operation process or under the stationary state the pressure distribution on a certain local surface of contact; Working fluid distributes at a certain static surface of contact upward pressure for another example.Conventional pressure sensor is because weight, volume are all bigger, and is subjected to the little restriction of work space, can't operate easily, can not satisfy the requirement that local interface pressure distributes and detects.
Summary of the invention
For solve conventional pressure sensor can not distribute to a certain surface of contact upward pressure detect, volume is big, the shortcoming of Heavy Weight, inconvenient operation; The object of the present invention is to provide a kind of fexible film grid sensing chip and based on MEMS[MicroElectroMechanical Systems, the micromachine electronic system] preparation method of technology, further purpose is to provide a kind of usefulness pressure distributed sensor that this sensing chip combines.Can detect the pressure distribution on a certain local surface of contact easily.
For reaching above purpose, the present invention takes following technical scheme to be achieved:
A kind of grid pressure sensing chip includes varistor body, it is characterized in that, also includes insulating bottom layer and insulation upper strata, is provided with column electrode framework layer and row electrode framework layer between insulating bottom layer and the insulation upper strata; The electrode framework layer of being expert at is medium to be arranged at intervals with many column electrodes, be arranged at intervals with many row electrodes in that row electrode framework layer is medium, column electrode and the distribution of row electrode formation grid, row, column electrode extend to separately, and the both sides of framework layer form the outer contact of row, column electrode respectively; Between column electrode framework layer and the row electrode framework layer middle layer is set, described varistor body has a plurality of and just is arranged in the middle layer at row, column electrode crossings place, and the both ends of the surface of each varistor body are joined with column electrode, row electrode respectively; Described insulating bottom layer and insulation upper strata, rectangular sheet of the whole formation in row, column electrode framework layer and middle layer.
In the such scheme, described column electrode number equates with the row number of electrodes, is four lines, four row; Described varistor body is cylindrical or square column type.
A kind of preparation method of grid pressure sensing chip comprises the steps:
The first step: deposition one deck column electrode framework layer on insulating bottom layer; Second step: etching column electrode groove on the electrode framework layer of being expert at; The 3rd step: conductive metal deposition forms column electrode in the slot electrode of being expert at; The 4th step: remove unnecessary metal material above the column electrode framework layer by mechanical fine grinding technology, make between each column electrode insulated from each other; The 5th step: deposit the middle layer on be expert at electrode framework layer and the column electrode; The 6th step: carve regular row, column hole in the middle layer, every capable hole is over against column electrode; The 7th step: in the row, column hole, deposit varistor body, and remove unnecessary pressure sensitive above the middle layer; The 8th step: deposition row electrode framework layer on middle layer and varistor body; The 9th step: etching row slot electrode on row electrode framework layer; The tenth step: conductive metal deposition forms the row electrode in the row slot electrode, the varistor body of row electrode in every row hole, middle layer; The 11 step: remove unnecessary metal material above the row electrode framework layer by mechanical fine grinding technology, make between each row electrode insulated from each other; The 12 step: deposition one deck insulation upper strata on row electrode framework layer and row electrode.
In the said method, described row, column hole can be carved into circular or square, and varistor body of deposition is cylindrical or square column type in it.
The pressure distributed sensor that the aforementioned grid pressure sensing chip of a kind of usefulness combines, it is characterized in that, comprise the rectangular sensor framework, splicing has several grid pressure sensing chips in the sensor frame, the grid pressure sensing chip outer contact of column electrode of splicing place mutually interconnects, and the outer contact of the row electrode of splicing place interconnects mutually; The opposite side in twos of sensor frame is respectively arranged with electrode connecting structure, and grid pressure sensing chip and the sensor frame outer contact of row, column electrode of butt edge joint's synapsis in twos are connected with this electrode connecting structure.
Described electrode connecting structure comprises electrode connecting parts and the I-shaped slot that is arranged on the sensor frame inboard, and electrode connecting parts is provided with I-shaped protruding rail and external lead wire hole, and during the electrode connecting parts assembling, described I-shaped protruding rail and I-shaped slot match; External lead wire hole joint detection lead.
Fexible film grid pressure sensing chip row, column number of electrodes of the present invention equates that conductive characteristic is also identical simultaneously; Therefore this sensing chip has matching properties preferably.As long as the chip that connects is placed on a certain detected, just can measure the pressure distribution on this place's surface of contact.
Fexible film grid pressure sensing device of the present invention is except conductive electrode exposes, and inner detecting element and row-column electrode all are in the protected state of insulation all the time; Simultaneously good by the matching properties between sensing chip, but combination in any forms the pressure distributed detecting sensor of required area, so it has that volume is little, in light weight, ultra-thin, non-intrusion type detects, advantage simple to operation.Fexible film grid pressure sensing chip of the present invention and the pressure distributed detecting sensor that combines thus can satisfy the special requirement that the pressure distribution on a certain local surface of contact is detected well, finish the detection task accurately.
Description of drawings
Fig. 1 is the structural representation of grid pressure sensing chip of the present invention.
Fig. 2 is the varistor body and the row, column distribution of electrodes figure of Fig. 1 grid pressure sensing chip.
Fig. 3 is the product structure variation diagram in Fig. 1 grid pressure sensing chip preparation process.Wherein Fig. 3 (1)-Fig. 3 (12) has represented the form of step 1 to the formed sensing chip of step 12 respectively.
Fig. 4 is the pressure distributed sensor structural representation that combines with Fig. 1 grid pressure sensing chip.
Fig. 5 is the wiring layout of electrode connecting structure among Fig. 4.
Fig. 6 is a kind of application synoptic diagram of Fig. 1 grid pressure sensing chip.
Fig. 7 is the application synoptic diagram of a kind of pressure distributed sensor of combining of Fig. 4 grid pressure sensing chip.
Among Fig. 1, Fig. 2, Fig. 4 and Fig. 5: 1, insulating bottom layer; 2, column electrode framework layer; 3, column electrode; 4, middle layer; 5, varistor body; 6, row electrode framework layer; 7, row electrode; 8, insulation upper strata; 9, the outer contact of column electrode; 9 ', the outer contact of row electrode; 10, sensing chip; 11, sensor frame; 12, electrode connecting structure; 13, electrode connecting parts; 14, I-shaped protruding rail; 15, I-shaped slot; 16, electrode joint face; 17, external lead wire hole.
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
Shown in Figure 2 as Fig. 1, a kind of grid pressure sensing chip includes insulating bottom layer 1 and insulation upper strata 8, is provided with column electrode framework layer 2 and row electrode framework layer 6 between insulating bottom layer 1 and the insulation upper strata 9; The electrode framework layer of being expert at 2 is medium to be arranged at intervals with 4 column electrodes 3, be arranged at intervals with 4 row electrodes 7 in that row electrode framework layer 6 is medium, column electrode 3 and the 7 formation grids distributions of row electrode, row, column electrode 3,7 extend to separately, and the both sides of framework layer form the outer contact 9,9 ' of row, column electrode respectively; 4,16 varistor bodies 5 in middle layer are set between column electrode framework layer 2 and the row electrode framework layer 6 are arranged in the middle layer 4 at row, column electrode crossings place, the both ends of the surface of each varistor body 15 are joined with column electrode 3, row electrode 7 respectively; Varistor body is cylindrical or square column type.Insulating bottom layer 1 and insulation upper strata 8, row, column electrode framework layer 2,6 and square plate of middle layer 4 whole formation.
Shown in Fig. 3 (1)-Fig. 3 (12), the preparation method of fexible film grid pressure sensing chip of the present invention may further comprise the steps: get insulating bottom layer 1 as the basal layer of making, deposition one deck column electrode framework layer 2, then etching column electrode groove on this journey electrode framework layer 2 on insulating bottom layer 1; Follow conductive metal deposition in the groove on column electrode framework layer 2 so that form column electrode 3; Remove unnecessary metal material by mechanical fine grinding technology again, the metallics that cleaning grinds off is so that insulated from each other between each column electrode; Then on column electrode 3 and column electrode framework layer 2, deposit middle layer 4, carve regular row, column circular hole or square hole on the interbed 4 hereinto then, every capable hole is over against column electrode 3, the deposition pressure sensitive forms varistor body 5 in these holes again, then removes and remains in other regional pressure sensitives on the middle layer 4; On varistor body 5 and middle layer 4, deposit a stratose arc-spark stand structure layer 6 again, then the etching electrode trenches of falling out on this row electrode framework layer 6; Then deposition row electrode 7 in the row electrode trenches of row electrode framework layer 6 passes through the machinery correct grinding again and removes unnecessary electrode metal material and cleaning, so that insulated from each other between each row electrode 7; On row electrode 7 and row electrode framework layer 6, deposit one deck insulation upper strata 8 at last.The fexible film grid pressure sensing chip has just completed.
Insulating bottom layer 1 is identical with insulation upper strata 8 material therefors, and spendable material has: mica sheet, organic glass, engineering plastics, glass fibre, present embodiment adopts organic glass.Row, column electrode framework layer 2,6: spendable material has: organic glass, heat conductive insulating pottery, quartz, silicon nitride, present embodiment adopts the heat conductive insulating pottery.Heat conductive insulating rubber is adopted in middle layer 4.Varistor body 5 spendable materials have: ZnO, SiC, Cu
2O, BaTiO
3, Fe
2O
3, SnO
2, GaAs, WO, Ti
2O
3, present embodiment adopts ZnO.Row, column electrode 3,7 spendable materials have: Au, Ag, Cu, Al, present embodiment adopts Ag.
Shown in Figure 5 as Fig. 4, the pressure distributed sensor that a kind of usefulness grid pressure sensing chip shown in Figure 1 combines, comprise that made from engineering plastics or hard wood has end rectangular frame 11, splicing has 4 grid pressure sensing chips 10 in the framework, the sensing chip outer contact 9 of column electrode of splicing place mutually interconnects, and the outer contact 9 ' of the row electrode of splicing place interconnects mutually; The inboard of opposite side in twos of framework 11 is provided with I-shaped slot 14 (totally 32), dress is inserted with electrode connecting parts 13 in the I-shaped slot 15, I-shaped protruding rail 14 on the electrode connecting parts matches with I-shaped slot 15, and the side of electrode connecting parts 13 in sensor frame is electrode joint face 16; Sensing chip 10 and the framework 11 outer contact of the row, column electrode of butt edge joint's synapsis 9,9 ' in twos contact with electrode joint face 16 and are connected; The part that each electrode connecting parts 13 is exposed I-shaped slot 14 has external lead wire hole 17, can be used for the joint detection lead.
The detection principle of fexible film grid pressure sensing chip of the present invention is: when external force acts on corresponding row, column electrode 3,7 infalls of sensing chip and is the sensing point place, certain distortion has just taken place because of being subjected to the pressure effect in the resistance of varistor body 5, thereby caused the variation of sensing point place varistor body resistance value, being reflected on the circuit is that variation has taken place for magnitude of voltage between a certain row, column electrode that is scanned; Just can reflect according to varistor body 5 change in voltage at point of crossing place and to be scanned a size of locating external force.
As shown in Figure 6, the detection of place, each point of crossing pressure is by the gated sweep circuit voltage of varistor body 5 between any row-column electrode constantly to be scanned to realize on the chip, owing to have row-column electrode framework layer 2,6, middle layer 4 in this chip; Therefore when peripheral circuit during to chip scanning, these insulation frameworks can prevent effectively that electric pole short circuit is eliminated stray capacitance and dead resistance between the row, column electrode from logical phenomenon between the migration of conductive electrode metallics (as silver particles) and column electrode 3 that causes therefrom or the row electrode 7.That is to say that these insulation frameworks have improved the accuracy of detection and the antijamming capability of circuit from structure.
As shown in Figure 7, because the fexible film grid pressure sensing chip row-column electrode number average of the embodiment of the invention is 4, the testing circuit interface figure place of various computing machines is 8,16,32 or 64; Therefore the detection line of the pressure distribution detecting sensor that is combined by this sensing chip can dock with the COMPUTER DETECTION circuit interface easily.Because the row-column electrode two ends all are exposed on the outside, other all are insulated everywhere on the chip, and the ranks number of electrodes equates on the chip simultaneously.Therefore such sensing chip can be combined into needed pressure distribution detecting sensor by any connection of even number, but detects the pressure distribution on the operational shape surface of contact.Detecting sensor for forming with 4 sensing chips shown in Fig. 7, row-column electrode all constitutes 8 bit scans.If when needing to detect to the pressure on a certain big face, can design earlier one with institute's area of detection group frame very nearly the same, in this framework, assemble sensing chip (Fig. 4) then.
Claims (6)
1. a grid pressure sensing chip includes varistor body, it is characterized in that, also includes insulating bottom layer and insulation upper strata, is provided with column electrode framework layer and row electrode framework layer between insulating bottom layer and the insulation upper strata; The electrode framework layer of being expert at is medium to be arranged at intervals with many column electrodes, be arranged at intervals with many row electrodes in that row electrode framework layer is medium, column electrode and the distribution of row electrode formation grid, row, column electrode extend to separately, and the both sides of framework layer form the outer contact of row, column electrode respectively; Between column electrode framework layer and the row electrode framework layer middle layer is set, described varistor body has a plurality of and just is arranged in the middle layer at row, column electrode crossings place, and the both ends of the surface of each varistor body are joined with column electrode, row electrode respectively; Described insulating bottom layer and insulation upper strata, rectangular sheet of the whole formation in row, column electrode framework layer and middle layer.
2. grid pressure sensing chip as claimed in claim 1 is characterized in that, described column electrode number equates with the row number of electrodes, is four.
3. the preparation method of grid pressure sensing chip according to claim 1 is characterized in that, comprises the steps:
The first step: deposition one deck column electrode framework layer on insulating bottom layer; Second step: etching column electrode groove on the electrode framework layer of being expert at; The 3rd step: conductive metal deposition forms column electrode in the slot electrode of being expert at; The 4th step: remove unnecessary metal material above the column electrode framework layer by mechanical fine grinding technology, make between each column electrode insulated from each other; The 5th step: deposit the middle layer on be expert at electrode framework layer and the column electrode; The 6th step: carve regular row, column hole in the middle layer, every capable hole is over against column electrode; The 7th step: the deposition pressure sensitive forms varistor body in the row, column hole, and removes unnecessary pressure sensitive above the middle layer; The 8th step: deposition row electrode framework layer on middle layer and varistor body; The 9th step: etching row slot electrode on row electrode framework layer; The tenth step: conductive metal deposition forms the row electrode in the row slot electrode, the varistor body of row electrode in every row hole, middle layer; The 11 step: remove unnecessary metal material above the row electrode framework layer by mechanical fine grinding technology, make between each row electrode insulated from each other; The 12 step: deposition one deck insulation upper strata on row electrode framework layer and row electrode.
4. as the preparation method of grid pressure sensing chip as described in the claim 3, it is characterized in that described column electrode number equates with the row number of electrodes, is four.
5. as the preparation method of grid pressure sensing chip as described in claim 3 or 4, it is characterized in that described row, column hole is carved into circular or square, varistor body of deposition should be cylindrical or square column type mutually in it.
6. pressure distributed sensor that combines with the described grid pressure sensing chip of claim 1, it is characterized in that, comprise the rectangular sensor framework, splicing has the even number grid pressure sensing chip in the sensor frame, the grid pressure sensing chip column electrode of splicing place mutually interconnects between the contact outward, interconnects between the outer contact of row electrode; The opposite side in twos of sensor frame is respectively arranged with electrode connecting structure, and grid pressure sensing chip and the sensor frame outer contact of row, column electrode of butt edge joint's synapsis in twos are connected with this electrode connecting structure; Described electrode connecting structure comprises electrode connecting parts and is arranged on the I-shaped slot of sensor frame inboard, electrode connecting parts is provided with I-shaped protruding rail and external lead wire hole, during the electrode connecting parts assembling, described I-shaped protruding rail and I-shaped slot match, and the side of electrode connecting parts in sensor frame is the electrode joint face; Grid pressure sensing chip and the sensor frame outer contact of row, column electrode of butt edge joint's synapsis in twos contact with described electrode joint face and are connected; Described external lead wire hole joint detection lead.
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| CN101216358B true CN101216358B (en) | 2010-06-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106698328A (en) * | 2015-11-12 | 2017-05-24 | 上海丽恒光微电子科技有限公司 | Pressure sensor and preparation method thereof |
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| CN105698978A (en) * | 2016-01-22 | 2016-06-22 | 电子科技大学 | PMMA film preparation method and PMMA film resistor-type flexible pressure sensor |
| DE102017100786B4 (en) * | 2017-01-17 | 2018-09-06 | Pilz Gmbh & Co. Kg | Tactile sensor with housing |
| CN109682508A (en) * | 2018-12-29 | 2019-04-26 | 贝骨新材料科技（上海）有限公司 | A kind of sensitive ink material and pliable pressure thin film sensor and preparation method thereof |
| CN110693469B (en) * | 2019-10-08 | 2020-12-08 | 华中科技大学 | Electronic skin with graded peak pressure structure and preparation method thereof |
| CN117109823A (en) * | 2023-07-25 | 2023-11-24 | 盛吉盛智能装备(江苏)有限公司 | Chip vacuum testing device |
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