CN101216599B

CN101216599B - Projection optical system, exposure apparatus and exposure method

Info

Publication number: CN101216599B
Application number: CN2007103061172A
Authority: CN
Inventors: 大村泰弘
Original assignee: Nikon Corp
Current assignee: Nikon Corp
Priority date: 2003-05-06
Filing date: 2004-05-06
Publication date: 2010-10-13
Anticipated expiration: 2024-05-06
Also published as: CN101216600A; CN101216600B; CN101216598B; CN101216599A; CN101295140B; CN101216682B; CN1784623A; CN101216682A; CN101216598A; CN100405119C; JP2004333761A; CN101295140A

Abstract

A catadioptric projection optical system for forming a reduced image of a first surface (R) on a second surface (W) is a relatively compact projection optical system having excellent imaging performance as well corrected for various aberrations, such as chromatic aberration and curvature of field, and being capable of securing a large effective image-side numerical aperture while suitably suppressing reflection loss on optical surfaces. The projection optical system comprises at least two reflecting mirrors (CM 1 , CM 2 ), and a boundary lens (Lb) whose surface on the first surface side has apositive refracting power, and an optical path between the boundary lens and the second surface is filled with a medium (Lm) having a refractive index larger than 1.1. Every transmitting member and every reflecting member with a refracting power forming the projection optical system are arranged along a single optical axis (AX) and the projection optical system has an effective imaging area of a predetermined shape not including the optical axis.

Description

Projection optical system, exposure device and exposure method

The application is that application number is 200480012069.0, and the applying date is on May 6th, 2004, and name is called dividing an application of " projection optical system, exposure device and exposure method ".

Technical field

The invention relates to a kind of projection optical system, exposure device and exposure method of reflection-refraction type, particularly about a kind of projection optical system that is applicable to the reflection-refraction type of the high exploring of employed exposure device when utilizing the photoengraving operation to make semiconductor element and liquid crystal display cells etc.

Background technology

Be used for making the photoengraving operation of semiconductor element etc., using a kind of pattern image with mask (or grating), be coated with the projection aligner that exposes on the wafer of photoresist etc. (or glass plate etc.) by projection optical system.And along with the raising of the integrated level of semiconductor element etc., the desired resolution capability of the projection optical system of projection aligner (exploring degree) improves day by day.

As a result, in order to satisfy requirement, the wavelength X of illumination light (exposure light) is shortened, and the picture side numerical aperture NA of projection optical system is increased the resolution capability of projection optical system.Specifically, the exploring degree of projection optical system is with k λ/NA (k handles coefficient) expression.And, be n as side numerical aperture NA in the refractive index that makes the medium (being generally gases such as air) between projection optical system and image planes, when the maximum incident angle of image planes is θ, represent with nsin θ.

In this case, in the time will seeking the increase of numerical aperture NA by increasing maximum incident angle θ, increase to the incident angle of image planes and from the angle of emergence of projection optical system, the reflection loss on optical surface increases, and can't guarantee big effective picture side numerical aperture.Therefore, known have a kind of by being full of the such medium of the high liquid of refractive index in the light path between projection optical system and image planes, and the technology of seeking the increase of numerical aperture NA.

But when this technology being applied in the common refractive projection optical system, existence is difficult to revise well chromatic aberration and satisfies amber and cut down (Petzval) condition now and revise curvature of the image well, and the also unavoidable problem of the maximization of optical system.And, there is the reflection loss be difficult to suppress well on the optical surface, and guarantees the problem of big effective picture side numerical aperture.

Summary of the invention

The 1st purpose of the present invention provides a kind of all aberrations such as chromatic aberration and curvature of the image that make and is revised well, and have good imaging performance, and can suppress the reflection loss on the optical surface well and guarantee the more small-sized projection optical system of big effective picture side numerical aperture.

And, the projection optical system that constitutes by the catoptrics member and make the dioptrics member and projection optical system that the catoptrics component composition is constituted only, under the situation that increases numerical aperture, the light beam of incidence reflection optical component becomes difficult with being separated by the light path of catoptrics member reflected beams, and the maximization that can't avoid the catoptrics member is the maximization of projection optical system.

For the summary of seeking to make and the summary of mutually adjusting of optical component, preferably constitute the reflected refraction projection optical system with single optical axis, even but in this case, when numerical aperture is increased, the light beam of incidence reflection optical component also becomes difficult with being separated by the light path of catoptrics member reflected beams, and projection optical system is maximized.

The 2nd purpose of the present invention is that the optical component of the projection optical system that constitutes reflection-refraction type is maximized, and obtains big numerical aperture.

And, the 3rd purpose of the present invention provides a kind of by having good imaging performance and having big effective picture side numerical aperture and then be the projection optical system of high-resolution, fine pattern can be carried out accurately the exposure device and the exposure method of transfer printing exposure.

In order to reach above-mentioned the 1st purpose, about the projection optical system of the 1st form of the present invention, for a kind of reduced image with the 1st is formed on the projection optical system of the reflection-refraction type on the 2nd,

It is characterized in that:

Aforementioned projection optical system comprises that the mask of at least 2 catoptrons, the 1st side has the border lens of positive refracting power;

When the refractive index of the environment in the light path that makes aforementioned projection optical system was 1, the medium that the optical routing between aforementioned border lens and aforementioned the 2nd has than 1.1 big refractive indexes was full of;

The all reflecting members that constitute all transmission member of aforementioned projection optical system and have a refracting power are configured along single optical axis;

Aforementioned projection optical system has effective imaging region of the reservation shape that does not contain aforementioned optical axis.

And, in order to reach the 2nd above-mentioned purpose, be the projection optical system that a kind of picture with the 1st is formed on the reflection-refraction type on the 2nd about the projection optical system of the 2nd form of the present invention,

It is characterized in that, comprising:

Comprise 2 catoptrons, and form the 1st imaging optical system of aforementioned the 1st intermediary image,

Aforementioned intermediary image is formed on the 2nd imaging optical system on aforementioned the 2nd;

Wherein,

Aforementioned the 2nd imaging optical system, has along the order that light passes through from aforementioned intermediary image side

The 1st catoptron of concave,

The 2nd catoptron,

Contain at least 2 negative lenses, and have negative refracting power the 1st lens group,

Have positive refracting power the 2nd lens group,

Aperture diaphragm,

The 3rd lens with positive refracting power.

And, in order to reach the 2nd above-mentioned purpose, be the projection optical system that a kind of picture with the 1st is formed on the reflection-refraction type on the 2nd about the projection optical system of the 3rd form of the present invention,

It is characterized in that, comprising:

Be configured in the light path between aforementioned the 1st and aforementioned the 2nd and have the 1st group of positive refracting power,

Be configured in the light path between aforementioned the 1st and aforementioned the 2nd and have at least the 2nd group of 4 catoptrons,

Be configured in the light path between aforementioned the 2nd group and aforementioned the 2nd, and contain at least 2 negative lenses, and have the 3rd group of negative refracting power,

Be configured in the light path between aforementioned the 3rd group and aforementioned the 2nd, and contain at least 3 positive lenss, and have the 4th group of positive refracting power;

Wherein,

In aforementioned the 2nd group, form 1 intermediary image, and in aforementioned the 4th group, have aperture diaphragm.

And, in order to reach the 2nd above-mentioned purpose,,, it is characterized in that for a kind of picture with the 1st is formed on the projection optical system of the reflection-refraction type on the 2nd about the projection optical system of the 4th form of the present invention, comprising:

Contain at least 6 catoptrons, and form the 1st aforementioned the 1st intermediary image and the 1st imaging optical system of the 2nd intermediary image;

Aforementioned the 2nd intermediary image is carried out the 2nd imaging optical system of relaying on aforementioned the 2nd.

And, in order to reach above-mentioned the 3rd purpose, be a kind of exposure device that formed pattern on the mask is exposed on the photonasty substrate about the exposure device of the 5th form of the present invention,

It is characterized in that, comprising:

The illuminator that the aforementioned mask that is used for setting on aforementioned the 1st throws light on;

Be used for will be on aforementioned mask formed aforementioned pattern picture, be formed on the on-chip projection optical system of photonasty that sets on aforementioned the 2nd about above-mentioned a certain form.

And, in order to reach above-mentioned the 3rd purpose,, be a kind of exposure method that formed pattern on the mask is exposed on the photonasty substrate about the exposure method of the 6th form of the present invention,

It is characterized in that, comprising:

The illumination operation that the mask that is formed with predetermined pattern is thrown light on,

Utilize each the described projection optical system in the 1st to the 44th of the claim scope, with the pattern of the aforementioned mask that disposed on aforementioned the 1st, the exposure process that on the photonasty substrate that is disposed on aforementioned the 2nd, exposes.

Description of drawings

Figure 1 shows that skeleton diagram about the formation of the exposure device of example of the present invention.

Figure 2 shows that the effective exposure area that in this example, is formed at the circular shape on the wafer and the location diagram of optical axis.

Figure 3 shows that the border lens of the 1st embodiment of this example and the skeleton diagram of the formation between wafer.

Figure 4 shows that the border lens of the 2nd embodiment of this example and the skeleton diagram of the formation between wafer.

Figure 5 shows that lens formation about the projection optical system of the 1st embodiment of the present invention.

Figure 6 shows that the lateral aberration among the 1st embodiment.

Figure 7 shows that the lens about the projection optical system of the 2nd embodiment of this example constitute.

Figure 8 shows that about the lateral aberration among the 2nd embodiment.

Figure 9 shows that lens formation about the reflected refraction projection optical system of the 3rd example.

Figure 10 shows that lens formation about the reflected refraction projection optical system of the 4th example.

Figure 11 shows that about the exposure area on the wafer of the 3rd and the 4th embodiment.

Figure 12 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system of the 3rd embodiment and radial direction.

Figure 13 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system of the 4th embodiment and radial direction.

Figure 14 shows that lens formation about the reflected refraction projection optical system of the 5th example.

Figure 15 shows that lens formation about the reflected refraction projection optical system of the 6th example.

Figure 16 shows that lens formation about the reflected refraction projection optical system of the 7th example.

Figure 17 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system of the 5th embodiment and radial direction.

Figure 18 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system of the 6th embodiment and radial direction.

Figure 19 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system of the 7th embodiment and radial direction.

The process flow diagram of the method when Figure 20 shows that the semiconductor element that obtains as micro element.

The process flow diagram of the method when obtaining the liquid crystal display cells as micro element shown in Figure 21.

The explanation of symbol

1: fluid Supplying apparatus

2: liquid withdrawal system

3: supply pipe

4: supply nozzle

7: the lens distal end face

20: retracting device

50: liquid

The 51:Z microscope carrier

The 52:XY microscope carrier

53: pedestal

54: moving lens

55: laser interferometer

56: the space

60: lens

100: light source

The 110:S polarization conversion element

A, b: position

AR: aberration modification region

AS, AS1, AS2: aperture diaphragm

AX, AX1, AX2: optical axis

CONT: control device

CM1: the 1st concave mirror

CM2: the 2nd concave mirror

EL: exposure light

ER: effective exposure area

EX: exposure device

G1, G3, G5: the 1st imaging optical system

G2, G4, G6: the 2nd imaging optical system

G11, G21, G22, G23, G31, G41, G42, G43: lens group

IL: lamp optical system

L1: planopaallel plate

L3, L7, L9, L11, L12, L22, L23, L27, L29, L210, L213: biconvex lens

L2, L5, L6, L13, L24, L25, L28, L30: negative meniscus lens

L4, L8, L10, L13, L14, L15, L16, L17, L21, L22, L23, L27, L29, L31, L32, L33, L34, L35, L211, L212, L214, L215, L216: positive concave-convex lens

L25, L26: biconcave lens

L18, L36, L217: plano-convex lens

Lb: border lens

Lp, L21: planopaallel plate

Lm: medium

M1, M2, M3, M4: catoptron

M22, M24: convex reflecting mirror

M21, M23: concave mirror

PK: lens barrel

PL, PL1, PL2, PL3: projection optical system

R, R1, R2, R3: grating

Ro: external diameter

Ri: internal diameter

RST: grating microscope carrier

RSTD: grating microscope carrier drive unit

Sb: the face of the grating side of border lens

W: wafer

WST: wafer carrier

WSTD: wafer carrier drive unit

WT: wafer supporter microscope carrier

Embodiment

By getting involved the medium that has than 1.1 big refractive indexes in the light path that makes between border lens and the image planes (the 2nd face), and seek the increase of picture side numerical aperture NA about the projection optical system of the 1st form of the present invention.By the way, be born in earlier Mr. M.Switkes and M.Rothschild among " the Resolution Enhancement of 157-nm lithographyby liquid Immersion " that delivers among " the Massachusetts Institute ofTechnology " on " SPIE2002 Microlithography ", as the medium that the light below the wavelength X 200nm is had desired transmitance, enumerate perfluoropolyethers (perfluoropolyethers: the trade name of Minnesota Mining and Manufacturing Company) and deionized water (Deionized Water) etc. as candidate.

And, in projection optical system, pay positive refracting power by optical surface to the object side (the 1st side) of border lens about the 1st form of the present invention, the reflection loss on this optical surface is reduced, and then guarantee big effective picture side numerical aperture.Like this, in have the optical system of the contour refractive index substance of liquid as side, can will effectively bring up to more than 1.0, and then can improve the exploring degree as the side numerical aperture as medium.But, under the certain situation of projection multiplying power, follow the increase of picture side numerical aperture, the object side numerical aperture also increases, so as only constituting projection optical system by the refraction member, then be difficult to satisfy Petzval's condition, can't avoid the maximization of optical system.

Therefore, in projection optical system about the 1st form of the present invention, adopt a kind of 2 catoptrons that have at least, and all transmission member and all reflecting members with refracting power (power) are configured along single optical axis, and have the reflection-refraction type optical system of type of effective imaging region of the reservation shape that does not contain optical axis.In the projection optical system of the type, utilize for example effect of concave mirror, can revise chromatic aberration well, and satisfy Petzval's condition like a cork and revise well and resemble the face bending, and can make the optical system miniaturization.

And, in the projection optical system of the type, because all transmission member (lens etc.) and all reflecting members (concave mirror etc.) with power are configured along single optical axis, so compare along the multiaxis formation that a plurality of optical axises dispose respectively with optical component, difficulty in the manufacturing is step-down especially, and is comparatively suitable.But, along under the situation of the single axle formation of single optical axis configuration, have the tendency of chromatic aberration being revised well the difficulty that becomes, but for example the ArF laser light is such by utilizing at optical component, make the laser light of frequency spectrum wide and narrow stripization, can overcome the problem of this chromatic aberration correction.

Like this, in the 1st form of the present invention, can realize a kind ofly all aberrations such as chromatic aberration and curvature of the image are revised well and being had good imaging performance, and can suppress the reflection loss on the optical surface well and guarantee the more small-sized projection optical system of big effective picture side numerical aperture.Therefore, utilization is about the exposure device and the exposure method of the projection optical system of the 1st form of the present invention, can fine pattern be carried out the transfer printing exposure accurately by having good imaging performance and having big effective picture side numerical aperture and then be the projection optical system of high-resolution.

In addition, in the 1st form of the present invention, adopt projection optical system to have the formation of even number catoptron, promptly make through the reflection of even number time the 1st picture be formed on the 2nd constitute good.By this formation, when in for example exposure device and exposure method, using, what form on wafer is not the back side picture of mask pattern but surface picture (erect image or inverted image), so can similarly utilize common mask (grating) with the exposure device that carries the refractive projection optical system.

And, in the 1st form of the present invention, adopt a kind of the 1st imaging optical system that contains 2 catoptrons and form aforementioned the 1st intermediary image that comprises, it is good that aforementioned intermediary image is formed on constituting of the 2nd imaging optical system on aforementioned the 2nd, and aforementioned the 2nd imaging optical system according to the order that light passes through, has the 1st catoptron of concave from aforementioned intermediary image side, the 2nd catoptron, have at least 2 negative lenses and have the 1st lens group of negative refracting power, the 2nd lens group with positive refracting power, aperture diaphragm, the 3rd lens group with positive refracting power is good.

As utilize this formation, then in the 1st imaging optical system, form the 1st intermediary image, even so under the situation of the numerical aperture that increases the reflected refraction projection optical system, also can be easily and positively carry out towards the light beam of the 1st side with separate towards the light path of the light beam of the 2nd side.And, because in the 2nd imaging optical system, comprise the 1st lens group with negative refracting power, thus the total length of reflected refraction projection optical system is shortened, and can be used to satisfy the adjustment of Petzval's condition like a cork.In addition, the 1st lens group relaxes the difference that the picture visual angle difference because of the 1st light beam that catoptron enlarged is caused, the generation of inhibition aberration.Therefore, even under the situation of numerical aperture of object side that increases the reflected refraction projection optical system in order to improve the exploring degree and picture side, also can in the exposure area, universe obtain good imaging performance.

And, in above-mentioned formation, adopt a kind of aforementioned the 1st imaging optical system to comprise the 4th lens group with positive refracting power, negative lens, concave mirror, light path is separated catoptron, and behind aforementioned the 4th lens group of the light transmission of in aforementioned the 1st imaging optical system, advancing and the aforementioned negative lens, be reflected by aforementioned concave mirror, and see through aforementioned negative lens once more and be directed to aforementioned light path and separate catoptron and separate light that catoptron is reflected after being reflected by aforementioned the 1st catoptron and aforementioned the 2nd catoptron by aforementioned light path, directly aforementioned the 1st lens group in aforementioned the 2nd imaging optical system of incident constitute good.

As utilize this formation, because the 1st imaging optical system comprises the 4th lens group with positive refracting power, so can make the 1st side form the heart far away.And, because the 1st imaging optical system has negative lens and concave mirror, so, can be used to satisfy the adjustment of Petzval's condition like a cork by this negative lens and concave mirror are adjusted.

And, in the 1st form of the present invention, comprise that the 1st imaging optical system that has 6 catoptrons at least and form the 1st aforementioned the 1st intermediary image and the 2nd intermediary image, aforementioned the 2nd intermediary image is carried out relaying on aforementioned the 2nd the 2nd imaging optical system are good.

As utilize this formation, because contain at least 6 catoptrons, even so under the situation of numerical aperture of object side that increases the reflected refraction projection optical system in order to improve the exploring degree and picture side, the total length of reflected refraction projection optical system is increased, and form the 1st intermediary image and the 2nd intermediary image, and can in the universe of exposure area, obtain good imaging performance.

In above-mentioned formation, in aforementioned at least 6 catoptrons that aforementioned the 1st imaging optical system is comprised, from the catoptron of the 2nd incident of aforementioned the 1st emitted light with between the catoptron of the 4th incident of aforementioned the 1st emitted light, it is good forming aforementioned the 1st intermediary image.

As utilize this formation, then, form aforementioned the 1st intermediary image from the catoptron of the 2nd incident of aforementioned the 1st emitted light with between the catoptron of the 4th incident of aforementioned the 1st emitted light.Therefore, even under the situation of numerical aperture of object side that increases the reflected refraction projection optical system in order to improve the exploring degree and picture side, also can be easily and positively carry out towards the light beam of the 1st side with separate towards the light path of the light beam of the 2nd side, and can in the universe of exposure area, obtain good imaging performance.

Yet, in order to constitute with single optical axis, need near the pupil position, form intermediary image, so projection optical system is preferably imaging optical system again about the reflection-refraction type projection optical system of the 1st form of the present invention.And, in order near the pupil position of the 1st imaging, to form intermediary image and to carry out the light path separation and avoid optical component mechanical interference to each other, even under the situation that the object side numerical aperture increases, also need to dwindle as far as possible the pupil footpath of the 1st imaging, be reflection and refraction optical system so preferably make the 1st little imaging optical system of numerical aperture.

Therefore, in the 1st form of the present invention, utilize the 1st imaging optical system contain 2 catoptrons at least and to be used to form the 1st intermediary image, be used for according to the 2nd imaging optical system that forms final picture from the light beam of this intermediary image on the 2nd, it is good constituting projection optical system.In this case, specifically, can utilize the 2nd catoptron that is disposed in the 1st catoptron that disposed in the 1st lens group, the light path between the 1st lens group and intermediary image of positive refracting power, the light path between the 1st catoptron and intermediary image, constitute the 1st imaging optical system.

And the 1st catoptron is the concave mirror that disposed near the pupil face of the 1st imaging optical system, and to dispose 1 negative lens at least in the round light path that this concave mirror forms be good.By in the 1st imaging optical system, in the round light path that forms concave mirror, disposing negative lens, can satisfy Petzval's condition like a cork like this, curvature of the image be revised well, and chromatic aberration is also revised well.

And, though the negative lens that comes and goes in the light path is configured near the pupil position, because the pupil footpath of the 1st imaging is dwindled as much as possible, so the effective diameter of negative lens also diminishes, therefore in this negative lens, energy density (energy of=per unit area unit pulse) increases easily.Therefore, when utilizing quartz to form this negative lens, being subjected to the irradiation of laser light and being easy to generate the local indexes of refraction variation that causes because of volumetric contraction is compacting, and then makes the imaging performance of projection optical system low.

Equally, also be that effective diameter is little and energy density increases easily with image planes in abutting connection with the border lens of configuration.Therefore, quartzy when forming the border lens when utilizing, be easy to generate compacting and imaging performance is descended.In the 1st form of the present invention, by making the negative lens that in the 1st imaging optical system, is disposed in the formed round light path of concave mirror and in the 2nd imaging optical system, constituting by fluorite, can avoid decline because of the caused imaging performance of compacting with the border lens of image planes in abutting connection with configuration.

And, in the 1st form of the present invention, preferably satisfy following conditional (1).In addition, in conditional (1), F1 is the focal length of the 1st lens group, Y ₀It is the maximum image height on the 2nd.

5＜F1/Y ₀＜15 (1)

When surpassing the higher limit of conditional (1), it is excessive that the pupil of the 1st imaging directly becomes, and avoids optical component mechanical interference to each other above being difficult to resemble, so not good.On the other hand, when being lower than the lower limit of conditional (1), because of high formed poor (picture subtense angle) bigger must the generation of object, make the correction of aberrations such as comatic aberration and the curvature of the image difficulty that becomes, so not good to the angle of the incident light of catoptron.In addition, in order to bring into play effect of the present invention more well, the higher limit of conditional (1) is defined as 13, and its lower limit is defined as 7 better.

And in the 1st form of the present invention, it is good that the 1st lens group has at least 2 positive lenss.Utilize this formation, can set the positive refracting power of the 1st lens group bigger, the formula that satisfies condition like a cork (1), and then can revise comatic aberration, distortion aberration, non-some aberration etc. well.

And it is high and be imbued with the catoptron of permanance to be difficult to make reflectivity, and the more reflecting surface of number is set can causes light loss.Therefore, in the 1st form of the present invention, when for example in exposure device and exposure method, using projection optical system, consider that the 2nd imaging optical system is preferable for the dioptric system that only is made of a plurality of transmission member from the viewpoint of boosting productivity.

And fluorite is the crystalline material with intrinsic birefringence, and the transmission material that is formed by the fluorite particularly birefringent influence to the light of the wavelength below the 200nm is big.So, in the optical system that contains the fluorite transmission member, the decline of the imaging performance that the different fluorite transmission member in crystallographic axis orientation is made up and suppress to cause because of birefringence, even but take this measure, the performance that can not suppress fully to cause because of birefringence descends.

In addition, the index distribution of the inside of known fluorite has the high-frequency composition, and the difference that contains the refractive index of this frequency content can be caused the generation of hot spot, and the imaging performance of projection optical system is descended, and is good so reduce the use of fluorite as much as possible.Therefore, in the present invention, in order to reduce the use of fluorite as much as possible, make formation as dioptric system promptly in the transmission member of the 2nd imaging optical system, the transmission member more than 70% is formed good by quartz.

And, in the 1st form of the present invention, preferably make effective imaging region have circular shape and satisfied following conditional (2).In addition, in conditional (2), R is the size of radius-of-curvature that is used to stipulate the circular arc of effective imaging region, Y ₀Be above-mentioned maximum image height on the 2nd like that.

1.05＜R/Y ₀＜12 (12)

In the 1st form of the present invention,, can avoid the maximization of optical system and carry out the light path separation like a cork by effective imaging region with the circular shape that does not comprise optical axis.But, when in for example exposure device and exposure method, using, on mask, be difficult to be thrown light on equably in the field of illumination of circular shape.Therefore, can adopt the method for utilizing the visual field diaphragm of aperture portion (light transmission department) to limit with circular shape to the rectangular illumination light beam corresponding with the rectangular-shaped zone in the zone of containing circular shape.In this case, in order to suppress the light loss of visual field diaphragm, need make the big or small R of radius-of-curvature of circular arc of the effective imaging region of regulation big as much as possible.

That is, when being lower than the lower limit of conditional (2), the big or small R of radius-of-curvature becomes too small, and the light beam loss of visual field diaphragm is increased, and because of the low throughput rate that makes of illumination efficiency descends, so not good.On the other hand, when surpassing the higher limit of conditional (2), the big or small R of radius-of-curvature becomes excessive, as when shortening scan exposure exceed long and will guarantee effective imaging region of required width the time, necessary aberration modification region increases, and optical system is maximized, so not good.In addition, in order to bring into play effect of the present invention more well, the higher limit of conditional (2) is set at 8, its lower limit is set at 1.07 better.

In addition, in the projection optical system of the reflection-refraction type of the above-mentioned type, even not will and image planes (the 2nd face) between the light path situation that this medium is full of with liquid under, also can be by the formula of satisfying condition (2), descend and because of the maximization of the caused optical system of increase of the aberration modification region of necessity and avoid because of the caused throughput rate of the decline of illumination efficiency.And, when being applied to projection optical system of the present invention in exposure device and the exposure method, the degree of the transmissivity of the medium (liquid etc.) that is full of between consideration border lens and image planes and the arrowbandization of laser light, for example use is good to ArF laser light (wavelength 193.306nm) as exposure light.

Projection optical system about the 2nd form of the present invention, for the 1st picture being formed on the reflected refraction projection optical system on the 2nd, comprise the 1st imaging optical system that contains 2 catoptrons and form aforementioned the 1st intermediary image, aforementioned intermediary image is formed on the 2nd imaging optical system on aforementioned the 2nd, and aforementioned the 2nd imaging optical system according to the order that light passes through, has the 1st catoptron of concave from aforementioned intermediary image side, the 2nd catoptron, have at least 2 negative lenses and have the 1st lens group of negative refracting power, the 2nd lens group with positive refracting power, aperture diaphragm, the 3rd lens group with positive refracting power.

And, in projection optical system about the 2nd form of the present invention, adopt a kind of aforementioned the 1st imaging optical system to comprise the 4th lens group with positive refracting power, negative lens, concave mirror, light path is separated catoptron, and behind aforementioned the 4th lens group of the light transmission of in aforementioned the 1st imaging optical system, advancing and the aforementioned negative lens, be reflected by aforementioned concave mirror, and be directed to aforementioned light path separation catoptron through aforementioned negative lens once more, and separate light that catoptron is reflected after being reflected by aforementioned light path by aforementioned the 1st catoptron and aforementioned the 2nd catoptron, directly aforementioned the 1st lens group in aforementioned the 2nd imaging optical system of incident constitute good.

And in the projection optical system about the 2nd form of the present invention, aforementioned the 1st catoptron makes the light of the 1st catoptron of incident, and the edge is carried out bending and is emitted as good towards the direction of the optical axis of this reflected refraction projection optical system.

And in the projection optical system about the 2nd form of the present invention, it is good that aforementioned the 2nd catoptron has convex shape.

As utilize these formations, then bending and ejaculation are carried out towards the direction of the optical axis of this reflected refraction projection optical system in the light of the 1st catoptron of incident edge, even so under the situation in the aperture that increases the reflected refraction projection optical system, also can make the 2nd catoptron miniaturization.Therefore, even under the situation of numerical aperture that increases object side and picture side in order to improve the exploring degree, also can carry out like a cork towards the light beam of the 1st side with separate towards the light path of the light beam of the 2nd side.

In projection optical system about the 2nd form of the present invention, aforementioned 2 catoptrons that comprised in aforementioned the 1st imaging optical system are according to the order from aforementioned the 1st light incident, be the catoptron of concave and the catoptron of convex shape, and aforementioned the 2nd catoptron that is comprised in aforementioned the 2nd imaging optical system is the catoptron of convex shape.

As utilize this formation, then 2 catoptrons that comprised in the 1st imaging optical system are concave and convex shape, and the 2nd catoptron has convex shape, so can be easily and the 2nd imaging optical system that positively leads from the emitted light beam of the 1st imaging optical system.

And, in the projection optical system about the 2nd form of the present invention, the aforementioned aperture diaphragm is configured between aforementioned the 1st catoptron and aforementioned the 2nd, and distance is Ma on aforementioned the 1st catoptron and aforementioned the 2nd optical axis when making, when aforementioned the 1st and aforementioned the 2nd distance are L, satisfy

0.17＜Ma/L＜0.6

Condition preferable.

As utilize this formation, because Ma/L is big than 0.17, interfere so can avoid the mechanicalness of the 1st catoptron and the 1st lens group and the 2nd lens group.And, because Ma/L is little than 0.6, so can avoid the elongationization and the maximization of the total length of reflected refraction projection optical system.

And in the projection optical system about the 2nd form of the present invention, it is good making aforementioned the 1st lens that aforementioned the 2nd imaging optical system is contained have 1 non-spherical lens at least.

As utilize this formation, because constitute at least 1 lens of the optical element of the 1st lens group, so even under the situation of the numerical aperture that increases object side and picture side, also can in the exposure area, universe obtain good imaging performance with aspheric surface shape.

And, projection optical system about the 3rd form of the present invention, for a kind of picture with the 1st is formed on reflected refraction projection optical system on the 2nd, comprise in the light path that is configured between aforementioned the 1st and aforementioned the 2nd and have the 1st group of positive refracting power, be configured in the light path between aforementioned the 1st group and aforementioned the 2nd and have the 2nd group of 4 catoptrons at least, be configured in the light path between aforementioned the 2nd group and aforementioned the 2nd and contain 2 negative lenses at least and have the 3rd group of negative refracting power, be configured in the light path between aforementioned the 3rd group and aforementioned the 2nd and contain 3 positive lenss at least and have the 4th group of positive refracting power, and, in aforementioned the 2nd group, form 1 intermediary image, in aforementioned the 4th group, have aperture diaphragm.

As utilizing projection optical system about the 3rd form of the present invention, then in the 2nd group, form the 1st intermediary image, even so under the situation of the numerical aperture that increases the reflected refraction projection optical system, also can be easily and carry out definitely towards the light beam of the 1st side with separate towards the light path of the light beam of the 2nd side.And, because comprise the 3rd group with negative refracting power, thus the total length of reflected refraction projection optical system is shortened, and can be used to satisfy the adjustment of Petzval's condition like a cork.Therefore, even under the situation of numerical aperture of object side that increases the reflected refraction projection optical system in order to improve the exploring degree and picture side, also can in the exposure area, universe obtain good imaging performance.

In projection optical system about the 3rd form of the present invention, aforementioned the 2nd group according to order from aforementioned the 1st light incident, it is good having the 1st catoptron of concave, the 2nd catoptron of convex shape, the 3rd catoptron of concave, the 4th catoptron of convex shape.

As utilize this formation, because according to the order that makes light incident from the 1st face, have concave mirror, convex reflecting mirror, concave mirror, convex reflecting mirror, so can easily and exactly will be from emitted beam direction the 2nd imaging optical system of the 1st imaging optical system.

In the projection optical system about the 3rd form of the present invention, aforementioned the 2nd group contains 1 negative lens at least, and in aforementioned the 2nd group light path the optical element of the most close aforementioned the 3rd group of sides, for the round lens that aforementioned the 4th catoptron or light pass through for 2 times preferable.

As utilize this formation, so, and be used to adjustment that Petzval's condition is satisfied like a cork because the optical element of the most close the 3rd group of sides is that the round lens that pass through for 2 times of the 4th catoptron or light can be by adjusting the 3rd group of lens that is contained, the 4th mirror lens or round lens with negative refracting power in the 2nd group light path.

And in the projection optical system about the 3rd form of the present invention, aforementioned the 3rd catoptron makes the light of incident the 3rd catoptron, along crooked towards the direction of the optical axis of this reflected refraction projection optical system and be emitted as good.

As utilize this formation, because the light of incident the 3rd catoptron is bent and penetrates along the direction of the optical axis of orientating reflex refraction projection optical system, so can make the 4th catoptron miniaturization.Therefore, even under the situation of numerical aperture that increases object side and picture side in order to improve the exploring degree, also can be easily and positively carry out towards the light beam of the 1st side with separate towards the light path of the light beam of the 2nd side.

And, in the projection optical system about the 3rd form of the present invention, the aforementioned aperture diaphragm is configured between aforementioned the 3rd catoptron and aforementioned the 2nd, and distance is Ma on aforementioned the 3rd catoptron and aforementioned the 2nd optical axis when making, when aforementioned the 1st and aforementioned the 2nd distance are L, satisfy

0.17＜Ma/L＜0.6

Condition preferable.

As utilize this formation, because Ma/L is big than 0.17, interfere so can avoid the mechanicalness of the 3rd catoptron and the 2nd group and the 3rd group.And, because Ma/L is little than 0.6, so can avoid the elongationization and the maximization of the total length of reflected refraction projection optical system.

And, in projection optical system, it is characterized in that: make aforementioned the 3rd group to have 1 non-spherical lens at least about the 3rd form of the present invention.As utilize this formation, because constitute at least 1 lens of the 3rd group optical element, so even under the situation of the numerical aperture that increases object side and picture side, also can in the exposure area, universe obtain good imaging performance with aspheric surface shape.

Projection optical system about the 4th form of the present invention, for a kind of picture with the 1st is formed on reflected refraction projection optical system on the 2nd, comprises the 1st imaging optical system that has at least 6 catoptrons and form the 1st aforementioned the 1st intermediary image and the 2nd intermediary image, aforementioned the 2nd intermediary image carried out the 2nd imaging optical system of relaying on aforementioned the 2nd.

As utilizing projection optical system about the 4th form of the present invention, because contain at least 6 catoptrons, even so under the situation of numerical aperture of object side that increases the reflected refraction projection optical system in order to improve the exploring degree and picture side, the total length of reflected refraction projection optical system is increased, and form the 1st intermediary image and the 2nd intermediary image, and can in the universe of exposure area, obtain good imaging performance.

In projection optical system about the 4th form of the present invention, in aforementioned at least 6 catoptrons that aforementioned the 1st imaging optical system is comprised, from the catoptron of the 2nd incident of aforementioned the 1st emitted light with between the catoptron of the 4th incident of aforementioned the 1st emitted light, it is good forming aforementioned the 1st intermediary image.

And, in projection optical system about the 4th form of the present invention, aforementioned the 1st imaging optical system comprises the field lens group with positive refracting power who is made of the transmissive optical element, and aforementioned at least 6 catoptrons are configured to good with the form that the light that will pass through the aforementioned field lens group reflects continuously.

As utilize this formation, and because the 1st imaging optical system comprises the field lens group with positive refracting power who is made of the transmissive optical element, thus utilize this field lens group can carry out the correction of distortion etc., and can make the 1st side form the heart far away.And, because do not dispose lens in the light path between 6 catoptrons at least, thus can guarantee to be used to keep the zone of each catoptron, and can carry out the maintenance of each catoptron like a cork.And, because light is reflected continuously by each catoptron, so, can Petzval's condition be satisfied by each catoptron is adjusted.

And, in projection optical system about the 4th form of the present invention, aforementioned the 1st imaging optical system comprises that the field lens group with positive refracting power who is made of the transmissive optical element is for good, and in aforementioned at least 6 catoptrons, from the catoptron of the 1st incident of aforementioned the 1st emitted light with between the catoptron of the 6th incident of aforementioned the 1st emitted light, comprise that at least 1 negative lens is good.

As utilize this formation, because the 1st imaging optical system comprises the field lens group with positive refracting power who is made of the transmissive optical element, so can make the 1st side form the heart far away.And, because between the catoptron of the catoptron of the 1st incident of the 1st emitted light and the 6th incident, comprise at least 1 negative lens, so by this negative lens is adjusted, can carry out the correction of chromatic aberration like a cork, and can adjust like a cork with the form that satisfies Petzval's condition.

And in the projection optical system about the 4th form of the present invention, the optical element that constitutes aforementioned the 2nd imaging optical system all is the transmissive optical element, and aforementioned the 1st reduced image of formation is good on aforementioned the 2nd.

As utilize this formation, all be the transmissive optical element because constitute the optical element of the 2nd imaging optical system, so and the load that separates without light path.Therefore, the numerical aperture of the picture side of reflected refraction projection optical system is increased, and can on the 2nd, form the reduced image of high reduction magnification.And, can carry out the correction of comatic aberration and spherical aberration like a cork.

And, in projection optical system about the 4th form of the present invention, aforementioned the 2nd imaging optical system is according to the order of passing through from the emitted light of the 1st imaging optical system, and the 4th lens group that configuration has the 1st lens group of positive refracting power, the 2nd lens group with negative refracting power, the 3rd lens group with positive refracting power, aperture diaphragm, have a positive refracting power is good.

As utilize this formation, constitute the 1st lens group of the positive refracting power of having of the 2nd imaging optical system, the 2nd lens group with negative refracting power, the 3rd lens group with positive refracting power, aperture diaphragm, have the 4th lens group of positive refracting power, advantageously act in order to satisfy Petzval's condition.And, can avoid the maximization of the total length of reflected refraction projection optical system.

And, in projection optical system about the 4th form of the present invention, in aforementioned at least 6 catoptrons, being configured in and leaving farthest locational catoptron from the optical axis of aforementioned the 1st emitted light and this reflected refraction projection optical system is that the catoptron of concave is preferable, and the aforementioned aperture diaphragm is configured between the catoptron of aforementioned concave and aforementioned the 2nd to good.Here, distance is Mb on catoptron that makes aforementioned concave and aforementioned the 2nd optical axis, and aforementioned the 1st and aforementioned the 2nd distance satisfy when being L

0.2＜Mb/L＜0.7

Condition be good.

As utilize this formation, because Mb/L is big than 0.2, so can avoid the catoptron of the concave that on the optical axis with the reflected refraction projection optical system leaves farthest position, is disposed and the mechanicalness of the 1st lens group, the 2nd lens group and the 3rd lens group is interfered.And, because Mb/L is little than 0.7, so can avoid the elongationization and the maximization of the total length of reflected refraction projection optical system.

And about the projection optical system of the 4th form of the present invention, it is good that its aforementioned the 2nd lens group and aforementioned the 4th lens group have at least 1 non-spherical lens.

As utilize this formation, and because constitute at least 1 lens of the optical element of the 2nd lens group and the 4th lens group with aspheric surface shape, thus can carry out the aberration correction like a cork, and can avoid the maximization of the total length of reflected refraction projection optical system.Therefore, even under the situation of the numerical aperture that increases object side and picture side, also can in the exposure area, universe obtain good imaging performance.

And, projection optical system about the 4th form of the present invention, its aforementioned reflected refraction projection optical system is will be as aforementioned the 1st intermediary image of aforementioned the 1st intermediary image, as aforementioned the 2nd intermediary image of the picture of aforementioned the 1st intermediary image, and 3 imaging optical systems that are formed in the light path between aforementioned the 1st and aforementioned the 2nd are preferable.

As utilize this formation, and because be 3 imaging optical systems, so the 1st intermediary image forms the 1st inverted image, the 2nd intermediary image forms the 1st erect image, the picture that forms on the 2nd is an inverted image.Therefore, the reflected refraction projection optical system is being carried on exposure device, and the 1st and the 2nd face carried out under the situation of scan exposure, can make the 1st direction of scanning and the 2nd direction of scanning form reverse direction, can change little form with all centers of gravity of exposure device and adjust like a cork.And, can alleviate the vibration that changes the reflected refraction projection optical system that is produced because of all centers of gravity of exposure device, and can in the exposure area, universe obtain good imaging performance.

And, projection optical system about the 2nd form to the 4 forms of the present invention, it is characterized in that: in the lens that aforementioned reflected refraction projection optical system is comprised, the lens face of aforementioned the 1st side of the lens of the most close aforementioned the 2nd side has positive refracting power, and in the light path between the lens of this most close aforementioned the 2nd side and aforementioned the 2nd, when the refractive index of the environment in the aforementioned reflected refraction projection optical system is 1, get involved the medium have than 1.1 big refractive indexes.

As utilize this formation, because in the light path between the lens of this most close aforementioned the 2nd side and aforementioned the 2nd, intervention has the medium than 1.1 big refractive indexes, so the exposure light wavelength in medium is when the refractive index that makes medium is n, form airborne 1/n doubly, the exploring degree is improved.

And, projection optical system about the 2nd form to the 4 forms of the present invention, it is contained in the aforementioned reflected refraction projection optical system and has the optical axis of all optical elements of predetermined refracting power, be configured in fact on the single straight line, and utilize the zone of aforementioned reflected refraction projection optical system formed picture on aforementioned the 2nd, for do not comprise aforementioned optical axis the axle exterior domain preferable.

As utilize this formation, because the optical axis of the whole optical elements that comprised in the reflected refraction projection optical system is configured in fact on the single straight line, so when making the reflected refraction projection optical system, can alleviate the manufacturing difficulty, and can carry out the relative adjustment of each optical component like a cork.

And about the exposure device of the 5th form of the present invention, the exposure device for exposing on the photonasty substrate at formed pattern on the mask comprises:

The illuminator that the aforementioned mask that is used for setting on aforementioned the 1st throws light on,

Be used for will be on aforementioned mask the picture of formed aforementioned pattern, be formed on the projection optical system of the on-chip arbitrary form about the 1st form to the 4 forms of the present invention of the photonasty that sets on aforementioned the 2nd.

As utilize this formation, because have succinct and the big reflected refraction projection optical system of numerical aperture, so fine pattern can be exposed on the photonasty substrate well.

And in the exposure device about the 5th form of the present invention, it is good that aforementioned illuminator is supplied with the illumination light that forms the S polarisation to aforementioned the 2nd.As utilize this formation, and the contrast of the picture that is formed on the photonasty substrate is improved, guarantee the wide depth of focus (DOF).Particularly in projection optical system, can not use optical path-deflecting mirror (crooked mirror) and carry out light path and separate with the function that makes optical axis deflection about the 1st form to the 4 forms of the present invention.Here, between P polarisation that is reflected by the optical path-deflecting catoptron and S polarisation, probably produce bigger phase differential, when utilizing the optical path-deflecting mirror, can be poor because of this reflected phase will, and make aforementioned the 2nd illumination light of supplying with formation S polarisation become difficult.That is,, also can be created in the problem that can not form the S polarisation on the 2nd even generate the polarisation that the optical axis of illumination optics device is formed Zhou Fangxiang.Relative therewith, in the projection optical system about the 1st form to the 4 forms of the present invention, this problem is difficult to produce.

And, in exposure device about the 5th form of the present invention, to aforementioned projection optical system aforementioned mask and aforementioned photonasty substrate are relatively moved along predetermined direction, and the pattern of aforementioned mask is carried out projection exposure on aforementioned photonasty substrate be good.

And, exposure method about the 6th form of the present invention, be a kind of exposure method that formed pattern on the mask is exposed on the photonasty substrate, comprise: the illumination operation that the mask that is formed with predetermined pattern is thrown light on, utilize projection optical system, the exposure process that the pattern of the aforementioned mask that disposed on aforementioned the 1st is exposed on the photonasty substrate that is disposed on aforementioned the 2nd about any form of the 1st form to the 4 forms of the present invention.

As utilize this formation, because comprising exposure device succinct and the reflected refraction projection optical system that numerical aperture is big, utilization exposes, so can expose to fine pattern well.

Below, with reference to diagram example of the present invention is described.

Figure 1 shows that summary pie graph about an example of exposure device of the present invention.

In the 1st figure, exposure device EX comprises the grating microscope carrier RST that supports grating R (mask), support is as the wafer carrier WST of the wafer W of substrate, the lamp optical system IL that the grating R that grating microscope carrier RST is supported throws light on exposure light EL, the pattern image of the grating R that exposure light EL is thrown light on is carried out the projection optical system PL of projection exposure on the wafer W that wafer carrier WST is supported, go up the fluid Supplying apparatus 1 of feed fluid 50 to wafer W, the retracting device 20 that the liquid 50 that flows out to the outside of wafer W is reclaimed, the control device CONT that all actions unify to control to exposure device EX.

Here, in this example, be grating R and wafer W to be carried out with moved further and grating R is gone up the scanning exposure apparatus (what is called is motion scan formula exposure device one by one) that formed pattern exposes on wafer W as the situation of exposure device EX, describing as an example along the direction of scanning to use.In the following description, direction that will be consistent with the optical axis AX of projection optical system PL is as Z-direction, will be in the plane vertical with Z-direction the synchronous moving direction (direction of scanning) of grating R and wafer W as X-direction, direction that will be vertical with Z-direction and Y direction (non-direction of scanning) is as Y direction.And, with the axial direction of X-axis, Y-axis and Z respectively as θ X, θ Y and θ Z direction.In addition, said here [wafer] is included on the semiconductor crystal wafer coating photoresist, and [grating] is included in wafer W and goes up the mask that forms the element pattern that enlarges times projections such as dwindling.

Lamp optical system IL throws light on exposure light EL to the grating R that is supported on the grating microscope carrier RST according to the exposure light that the light source 100 of the illumination light that is used to supply with ultraviolet region is sent.Lamp optical system IL have with from the light integraph of the illumination homogenising of the emitted light beam of light source 100, will from the exposure light EL of light integraph carry out optically focused condenser, relay lens system, will utilize the field of illumination on the grating R of exposure light EL to be set at slot-shaped variable field-of-view diaphragm etc.Here, lamp optical system IL has the linear polarization light that is used for from light source 100, does not produce light loss in fact, is converted to the S polarization conversion element 110 that grating R (wafer W) is formed the polarisation light of S polarisation.As this S polarization conversion element, in No. the 3246615th, the special permission of for example Jap.P., have illustrated.

Thrown light on the exposure light EL of uniform Illumination Distribution by lamp optical system IL in predetermined field of illumination on the grating R.As from the emitted exposure light EL of lamp optical system IL, for example can utilize bright line (g line, h line, i line) and KrF exciplex laser light extreme ultraviolet lights such as (wavelength 248nm) (DUV light), ArF exciplex laser light (wavelength 193nm) and F2 laser light (wavelength 157nm) equal vacuum ultraviolet light (VUV light) etc. from the emitted ultraviolet region of mercury vapor lamp.Be to utilize ArF exciplex laser light in this example.

Grating microscope carrier RST supports grating R, can promptly carry out 2 dimensions and move in the XY plane, and can carry out small rotation along θ Z direction in the plane vertical with the optical axis AX of projection optical system PL.Grating microscope carrier RST is driven by grating microscope carrier drive unit RSTD such as linear motors.Grating microscope carrier drive unit RSTD is by control device CONT Be Controlled.By real-time instrumentation, the instrumentation result is output to control device CONT by laser interferometer for the 2 dimension direction positions of grating R on the grating microscope carrier RST and rotation angle.Control device CONT drives grating microscope carrier drive unit RSTD by the instrumentation result according to laser interferometer, and carries out the location of the grating R that grating microscope carrier RST supported.

Projection optical system PL carries out projection exposure with the pattern of grating R with predetermined projection multiplying power β on wafer W, be made of a plurality of optical elements (lens), and these optical elements are supported by the lens barrel PK as hardware.In this example, projection optical system PL is that projection multiplying power β is for example 1/4 or 1/5 reduction system.In addition, projection optical system PL times system such as also can be and enlarges a certain of system.And in the tip side (wafer W side) of the projection optical system PL of this example, optical element (lens) 60 exposes from lens barrel PK.60 couples of lens barrel PK of this optical element can load and unload (replacing) and be provided with.

Wafer carrier WST supports wafer W, comprises Z microscope carrier 51, the XY microscope carrier 52 of supporting Z microscope carrier 51 that wafer W is kept by the wafer supporter, the pedestal 53 of supporting XY microscope carrier 52.Wafer carrier WST is driven by wafer carrier drive unit WSTD such as linear motors.Wafer carrier drive unit WSTD is controlled by control device CONT.By driving Z microscope carrier 51, the position of the position (focal position) of the Z-direction of the wafer W that Z microscope carrier 51 is kept and θ X, θ Y direction is controlled.And, by driving XYZ microscope carrier 52, the position of the XY direction of may command wafer W (with the position of the parallel in fact direction of the image planes of projection optical system PL).That is, the surface of wafer W is incorporated in the image planes of projection optical system PL with automatic focus mode and self-poise mode, and XY microscope carrier 52 carry out the location of X-direction and the Y direction of wafer W at focal position and the pitch angle of Z microscope carrier 51 control wafer W.In addition, also Z microscope carrier and XY microscope carrier can be wholely set certainly.

Wafer carrier WST (Z microscope carrier 51) is provided with moving lens 54.And, be provided with laser interferometer 55 with the position of moving lens 54 subtends.2 dimension direction positions and the rotation angle of wafer W on the wafer carrier WST are carried out real-time instrumentation by laser interferometer 55, and make the instrumentation result be output to control device CONT.Control device CONT drives wafer carrier drive unit WSTD by the instrumentation result according to laser interferometer 55, and carries out the location of the wafer W that wafer carrier WST supported.

In this example,, use immersion method in order exposure wavelength to be shortened and to improve the exploring degree in fact and increasing the depth of focus in fact.Therefore, at least with the picture of the pattern of grating R during carrying out transfer printing on the wafer W, in the top end face of the optical element (lens) 60 of the wafer side of the surface of wafer W and projection optical system PL (below) 7, be full of predetermined liquid 50.As mentioned above, adopt a kind of tip side, lens 60 are exposed, and make the formation of 50 contact lenses 60 of liquid at projection optical system PL.By this, can prevent the corrosion etc. of the lens barrel PK that metal constitutes.And, the top end face 7 of lens 60 is compared enough little with the lens barrel PK of projection optical system PL and wafer W, and adopt the formation of 50 contact lenses 60 of liquid as described above, so form the formation that a kind of liquid 50 is filled by the part in the image planes side of projection optical system PL.That is, the liquid between projection optical system PL and the wafer W soaks and partly compares enough little with wafer W.In this example, liquid 50 uses pure water.Pure water is not an ArF exciplex laser light, under the situation that makes exposure light EL for the bright line (g line, h line, i line) of the emitted ultraviolet region of for example mercury vapor lamp and KrF exciplex laser light (wavelength 248nm) extreme ultraviolet light (DUV light) of etc.ing, can see through this light EL that exposes.

Exposure device EX comprises that the space 56 between the top end face of projection optical system PL (top end faces of lens 60) 7 and wafer W supplies with the fluid Supplying apparatus 1 of predetermined liquid 50, is the liquid withdrawal system 2 of the 2nd retracting device of the liquid 50 on the wafer W as the liquid 50 that reclaims space 56.Fluid Supplying apparatus 1 is used for the image planes side part of projection optical system PL is filled with liquid 50, comprises the container of taking in liquid 50, force (forcing) pump and temperature adjustment device that the temperature of the liquid 50 that supplies to space 56 is adjusted etc.On fluid Supplying apparatus 1, be connected with an end of supply pipe 3, and be connected with supply nozzle 4 at another end of supply pipe 3.Fluid Supplying apparatus 1 is by supply pipe 3 and supply nozzle 4, to space 56 feed fluids 50.

Container that the liquid 50 that liquid withdrawal system 2 comprises suction pump, will reclaim is taken in etc.On liquid withdrawal system 2, be connected with an end of recovery tube 6, and be connected with recovery nozzle 5 at another end of recovery tube 6.Liquid withdrawal system 2 is by reclaiming nozzle 5 and recovery tube 6, and the liquid 50 in space 56 is reclaimed.When filling liquid 50 in space 56, control device CONT drives fluid Supplying apparatus 1, and supply with predetermined amount of liquid 50 at time per unit by supply pipe 3 and 4 pairs of spaces 56 of supply nozzle, and drive liquid withdrawal system 2, reclaim predetermined amount of liquid 50 at time per unit by space 56 by reclaiming nozzle 5 and recovery tube 6.By this, configuration liquid 50 forms the immersion liquid part in the top end face 7 of projection optical system PL and the space 56 between wafer W.Here, control device CONT can set the liquid quantity delivered to the time per unit in space 56 arbitrarily by controlling liquid feedway 1, and by controlling liquid retracting device 2, can at random set the liquids recovery amount of the time per unit from the wafer W.

The 2nd figure is depicted as in this example the position relation of the effective exposure area of formed circular shape and optical axis on wafer.In this example, shown in the 2nd figure, the zone that aberration is well revised is aberration modification region AR, by with optical axis AX be circle, internal diameter (radius) Ri of external diameter (radius) R0 at center circle, a separation distance H the interval along 2 parallel line segments of directions X, be defined as circular shape.And, the form of effective exposure area (effectively imaging region) ER to connect in roughly with the aberration modification region AR of circular shape, by the size of radius-of-curvature be R and along the empty standard width of a room in an old-style house of directions X every 2 line segments of the length D parallel at interval of 2 circular arcs, a distance of separation H with directions X, be set at circular shape.

Like this, all effective imaging region ER that projection optical system PL has are present in from the zone that optical axis AX leaves.And, be of a size of H along the Y direction of the effective exposure area ER of circular shape, be of a size of D along directions X.Therefore, though the diagram of omission on grating R, can not comprise the field of illumination (being the effective lighting zone) that optical axis forms the circular shape with the size corresponding with the effective exposure area ER optics of circular shape and shape.

And, in the exposure device of this example, adopt that a kind of (at the 1st and the 2nd embodiment is lens L11 in the optical component that is configured in the most close grating example in the optical component that constitutes projection optical system PL, at the 3rd and the 5th embodiment is lens L1, at the 4th and the 6th embodiment is lens L21, at the 7th embodiment is lens L51) and border lens Lb (in the 1st and the 2nd embodiment for lens L217, in the 3rd embodiment lens L18, in the 4th embodiment lens L 36, in the 5th embodiment lens L20, in the 6th embodiment lens L41, in the 7th embodiment for lens L70) between make the inside of projection optical system PL keep the formation of airtight conditions, and the internal gas of projection optical system PL can be replaced or roughly kept vacuum state by inert gases such as helium and nitrogen.In addition, in the narrow light path between lamp optical system IL and projection optical system PL, dispose grating R and grating microscope carrier RS etc., but in the inside that grating R and grating microscope carrier RS etc. is sealed the housing (not shown) of encirclement, be filled with inert gases such as nitrogen or helium, or roughly keep vacuum state.

Figure 3 shows that the border lens among the 1st embodiment of this example and the skeleton diagram of the formation between wafer.With reference to Fig. 3, in the 1st embodiment, border lens Lb has convex surface towards grating side (the 1st side).In other words, the face Sb of the grating side of border lens Lb has positive refracting power.And the light path between border lens Lb and the wafer W is filled with the medium Lm that has than 1.1 big refractive indexes.In the 1st embodiment, use deionized water effect medium Lm.

Figure 4 shows that the border lens of the 2nd embodiment of this example and the skeleton diagram of the formation between wafer.With reference to Fig. 4, in the 2nd embodiment also with the 1st embodiment similarly, border lens Lb has convex surface towards the grating side, and the face Sb of its grating side has positive refracting power.But, in the 2nd embodiment, different with the 1st embodiment, planopaallel plate Lp is disposed in plug freely in the light path between border lens Lb and wafer W, and the light path between light path between border lens Lb and the planopaallel plate Lp and planopaallel plate Lp and the wafer W is filled by the medium Lm that has than 1.1 big refractive indexes.In the 2nd embodiment, with the 1st embodiment similarly, utilize deionized water as medium Lm.

In addition, in this example, adopt and a kind ofly wafer W is relatively moved and the step-scan mode of carrying out scan exposure when exposing to projection optical system PL when utilizing, from beginning of scan exposure, continue the formation of full of liquid medium Lm in the light path between the border of projection optical system PL lens Lb and wafer W to end.In addition, it is such that the spy who also can be a kind of for example Japanese Patent Laid Open Publication opens the technology that flat 10-303114 communique disclosed, constitute wafer supporter microscope carrier WT container-like with the form that can take in liquid (medium Lm), and the central authorities' (in liquid) within it, utilize vacuum suction to position the formation of maintenance wafer W.At this moment, the lens barrel top ends that forms a kind of projection optical system PL reaches in the liquid, and then makes the optical surface of the wafer side of border lens Lb reach formation in the liquid.

Like this, in all scopes of the light path from light source 100 to substrate P, form the absorbed hardly environment of a kind of exposure light.And as mentioned above, the exposure area on field of illumination on the grating R and the wafer W (being effective exposure area ER) is the circular shape that extends along directions X.Therefore, carry out the position control of grating R and substrate W by utilizing grating stage control apparatus RSTD and substrate microscope carrier drive unit, laser interferometer etc., and make grating microscope carrier RST and substrate microscope carrier WS along directions X, and then make grating R and substrate (wafer) W carry out same moved further (scanning), thereby on substrate W, to having with the Y direction size H equal widths of effective exposure area ER and having exposure area with the corresponding length of the scanning amount (amount of movement) of substrate W, make grating pattern be scanned exposure.

In each embodiment, aspheric surface at the height of direction that will be vertical with optical axis as y, the distance along optical axis (slippage) of the position on will be from the section on aspheric summit to the aspheric surface of height y is as z, with vertex curvature radius as r, with the circular cone coefficient as k, n time asphericity coefficient during as Cn, is represented by following numerical expression (a).In each embodiment, the lens face that forms aspherical shape is added the * symbol on the right side of face number.

z＝(y ²/r)/[1+{1-(1+k)·}y ²/r ²] ^1/2+c ₄·y ⁴+c ₆·y ⁶+c ₈·y ⁸+c ₁₀·y ¹⁰+c ₁₂y ¹²+c ₁₄·y ¹⁴+c ₁₆·y ¹⁶+c ₁₈·y ¹⁸+c ₂₀·y ²⁰ (a)

In addition, in the 1st and the 2nd embodiment,, omit its record because the value of asphericity coefficient C16～C20 is 0.

And, in each embodiment, projection optical system PL by the 1st imaging optical system G1 of the intermediary image of the pattern that is used to form the grating R that on object plane (the 1st face), is disposed, be used for going up the 2nd imaging optical system G2 formation of the reduced image that forms grating pattern according to the wafer W that on image planes (the 2nd face), is disposed from the light of intermediary image.Here, the 1st imaging optical system G1 is the reflection and refraction optical system that comprises the 1st concave mirror CM1 and the 2nd concave mirror CM2, and the 2nd imaging optical system G2 is a dioptric system.

(the 1st embodiment)

Figure 5 shows that the lens about the projection optical system of the 1st embodiment of this example constitute.With reference to Fig. 5, in projection optical system PL about the 1st embodiment, the 1st imaging optical system G1 disposes the convex surface that the makes aspherical shape biconvex lens L11 towards the wafer side successively from the grating side along the direct of travel of light, biconvex lens L12, with the concave surface of aspherical shape negative meniscus lens L13, the 1st concave mirror CM1 towards the grating side.And, in the 1st imaging optical system G1, be used for and be reflected and light by negative meniscus lens L13 by the 1st concave mirror CM1, the reflecting surface of the 2nd concave mirror CM2 that reflects to the 2nd imaging optical system G2 is configured between biconvex lens L12 and negative meniscus lens L13 and does not comprise on the zone of optical axis AX.Therefore, biconvex lens L11 and biconvex lens L12 constitute the 1st lens group with positive refracting power.And the 1st concave mirror CM1 is formed near the concave mirror that is disposed the pupil face of the 1st imaging optical system G1.

On the other hand, the 2nd imaging optical system G2 along the direct of travel of light from the grating side successively by the positive concave-convex lens L21 of non-concave surface towards the grating side, biconvex lens L22, with the concave surface of aspherical shape positive concave-convex lens L23 towards the wafer side, with the convex surface of aspherical shape negative meniscus lens L24 towards the grating side, with the negative meniscus lens L25 of convex surface towards the grating side, with the concave surface of aspherical shape biconcave lens L26 towards the grating side, with the positive concave-convex lens L27 of concave surface towards the grating side, with the convex surface of aspherical shape negative meniscus lens L28 towards the grating side, biconvex lens L29, biconvex lens L210, with the positive concave-convex lens L211 of convex surface towards the grating side, aperture diaphragm AS, with the positive concave-convex lens L212 of concave surface towards the grating side, biconvex lens L213, with the concave surface of aspherical shape positive concave-convex lens L214 towards the wafer side, with the positive concave-convex lens L215 of convex surface towards grating, with the concave surface of aspherical shape positive concave-convex lens L216 towards the wafer side, the plane is constituted towards the plano-convex lens L217 of wafer side (border lens Lb).

In the 1st embodiment, all reflecting members (the 1st concave mirror CM1, the 2nd concave mirror CM2) that constitute all transmission member (lens) of projection optical system PL and have power are along single optical axis AX configuration.That is, in the transmission member that constitutes the 2nd imaging optical system G2,100% transmission member is formed by quartz.And, in plano-convex lens L217 and the light path between the wafer W, fill the medium Lm that constitutes by deionized water as border lens Lb.In the 1st embodiment, from light scioptics L11～L13 of grating R, incident the 1st concave mirror CM1.By the light that the 1st concave mirror CM1 is reflected, scioptics L13 and the 2nd concave mirror CM2, near the intermediary image of formation grating R the 1st concave mirror CM1.By the light that the 2nd concave mirror CM2 is reflected, scioptics L21～L217 (Lb), the reduced image of formation grating R on wafer W.

In the 1st embodiment, all transmission member (lens) that constitute projection optical system PL are by quartzy (SiO ₂) form.The oscillation center wavelength of ArF exciplex laser light as exposure light is 193.306nm, near 193.306nm, quartzy refractive index with whenever+wavelength variations-1.591 * 10 of 1pm ^-6Ratio change, and with whenever-wavelength variations+1.591 * 10 of 1pm ^-6Ratio change.In other words, near 193.306nm, the dispersion (dn/d λ) of quartzy refractive index is-1.591 * 10 ^-6/ pm.And, near 193.306nm, the refractive index of deionized water with whenever+wavelength variations-2.6 * 10 of 1pm ^-6Ratio change, and with whenever-wavelength variations+2.6 * 10 of 1pm ^-6Ratio change.In other words, near 193.306nm, the dispersion of the refractive index of deionized water (dn/d λ) is-2.6 * 10 ^-6/ pm.

Like this, in the 1st embodiment, refractive index to the quartz of centre wavelength 193.306nm is 1.5603261, is 1.560325941 to the refractive index of the quartz of 193.306nm+0.1pm=193.3061nm, is 1.560326259 to the refractive index of the quartz of 193.306nm-0.1pm=193.3059nm.And, refractive index to the deionized water of centre wavelength 193.306nm is 1.47, refractive index to the deionized water of 193.306nm+0.1pm=193.3061nm is 1.46999974, is 1.47000026 to the refractive index of the deionized water of 193.306nm-0.1pm=193.3059nm.

In following table (1), disclose set of data value about the projection optical system PL of the 1st embodiment.In table (1), respectively with λ represent the to expose centre wavelength of light, β represents projection multiplying power (the imaging multiplying power of complete set), NA represents as side (wafer side) numerical aperture, Ro and Ri represent external radius and the inside radius of aberration modification region AR, H and D represent Y direction size and the directions X size of effective exposure area ER, and R represents to be used for the size of radius-of-curvature of circular arc of the effective exposure area ER (effectively imaging region) of regulation circular shape, Y ₀Represent maximum image height.And, respectively with the face number represent along from as the grating of object plane (the 1st face) towards order as the face that begins from the grating side of the light going direction of the wafer face of image planes (the 2nd face), r represents that the radius-of-curvature of each face (is a vertex curvature radius: mm) under aspheric situation, d represents that it is face (mm) at interval at interval that the axle of each face is gone up, and n represents the refractive index to centre wavelength.

In addition, face interval d changes its symbol according to the degree that is reflected.Therefore, face at interval d symbol from the light path of the 1st concave mirror CM1 to the 2 concave mirror CM2 for negative, in other light path for just.And, regardless of the incident direction of light, all making towards the radius-of-curvature of the convex surface of grating side to just, the radius-of-curvature of concave surface is for negative.In addition, being expressed in the later table (2) in the table (1) also is identical.

[table 1]

(the main set of data)

λ＝193.306nm

β＝+1/4

NA＝1.04

Ro＝17.0mm

Ri＝11.5mm

H＝26.0mm

D＝4.0mm

R＝20.86mm

Y ₀＝17.0mm

(the optical component set of data)

The face number	r	d	n	Optical component
The face number	r	d	n	Optical component		(grating face)	70.25543
1	444.28100	45.45677	1.5603261	(L11)		(grating face)	70.25543
1	444.28100	45.45677	1.5603261	(L11)	2*	-192.24078	1.00000
3	471.20391	35.53423	1.5603261	(L12)	2*	-192.24078	1.00000
3	471.20391	35.53423	1.5603261	(L12)	4	-254.24538	122.19951
5*	-159.65514	13.00000	1.5603261	(L13)	4	-254.24538	122.19951
5*	-159.65514	13.00000	1.5603261	(L13)	6	-562.86259	9.00564
7	-206.23868	-9.00564		(CM1)	6	-562.86259	9.00564
7	-206.23868	-9.00564		(CM1)	8	-562.86259	-13.00000	1.5603261	(L13)
9*	-159.65514	-107.19951			8	-562.86259	-13.00000	1.5603261	(L13)
9*	-159.65514	-107.19951			10	3162.83419	144.20515		(CM2)
11	-389.01215	43.15699	1.5603261	(L21)	10	3162.83419	144.20515		(CM2)
11	-389.01215	43.15699	1.5603261	(L21)	12	-198.92113	1.00000
13	3915.27567	42.01089	1.5603261	(L22)	12	-198.92113	1.00000
13	3915.27567	42.01089	1.5603261	(L22)	14	-432.52137	1.00000
15	203.16777	62.58039	1.5603261	(L23)	14	-432.52137	1.00000
15	203.16777	62.58039	1.5603261	(L23)	16*	515.92133	18.52516
17*	356.67027	20.00000	1.5603261	(L24)	16*	515.92133	18.52516
17*	356.67027	20.00000	1.5603261	(L24)	18	269.51733	285.26014
19	665.61079	35.16606	1.5603261	(L25)	18	269.51733	285.26014
19	665.61079	35.16606	1.5603261	(L25)	20	240.55938	32.43496
21*	-307.83344	15.00000	1.5603261	(L26)	20	240.55938	32.43496
21*	-307.83344	15.00000	1.5603261	(L26)	22	258.17867	58.24284
23	-1143.34122	51.43638	1.5603261	(L27)	22	258.17867	58.24284

The face number	r	d	n	Optical component
The face number	r	d	n	Optical component	24	-236.25969	6.67292
25*	1067.55487	15.00000	1.5603261	(L28)	24	-236.25969	6.67292
25*	1067.55487	15.00000	1.5603261	(L28)	26	504.02619	18.88857
27	4056.97655	54.00381	1.5603261	(L29)	26	504.02619	18.88857
27	4056.97655	54.00381	1.5603261	(L29)	28	-283.04360	1.00000
29	772.31002	28.96307	1.5603261	(L210)	28	-283.04360	1.00000
29	772.31002	28.96307	1.5603261	(L210)	30	-8599.87899	1.00000
31	667.92225	52.94747	1.5603261	(L211)	30	-8599.87899	1.00000
31	667.92225	52.94747	1.5603261	(L211)	32	36408.68946	2.30202
33	∞	42.27703		(AS)	32	36408.68946	2.30202

34	-2053.34123	30.00000	1.5603261	(L212)
34	-2053.34123	30.00000	1.5603261	(L212)	35	-514.67146	1.00000
36	1530.45141	39.99974	1.5603261	(L213)	35	-514.67146	1.00000
36	1530.45141	39.99974	1.5603261	(L213)	37	-540.23726	1.00000
38	370.56341	36.15464	1.5603261	(L214)	37	-540.23726	1.00000
38	370.56341	36.15464	1.5603261	(L214)	39*	12719.40982	1.00000
40	118.92655	41.83608	1.5603261	(L215)	39*	12719.40982	1.00000
40	118.92655	41.83608	1.5603261	(L215)	41	190.40194	1.00000
42	151.52892	52.42553	1.5603261	(L216)	41	190.40194	1.00000
42	151.52892	52.42553	1.5603261	(L216)	43*	108.67474	1.12668
44	91.54078	35.50067	1.5603261	(L217：Lb)	43*	108.67474	1.12668
44	91.54078	35.50067	1.5603261	(L217：Lb)	45	∞	6.00000	1.47	(Lm)

(wafer face)

(aspherical surface data)

2

k＝0

C ₄＝-8.63025×10 ^-9 C ₆＝2.90424×10 ^-13

C ₈＝5.43348×10 ^-17 C ₁₀＝1.65523×10 ^-21

C ₁₂＝8.78237×10 ^-26 C ₁₄＝6.53360×10 ^-30

5 and 9 (with one side)

k＝0

C ₄＝7.66590×10 ^-9 C ₆＝6.09920×10 ^-13

C ₈＝-6.53660×10 ^-17 C ₁₀＝2.44925×10 ^-20

C ₁₂＝-3.14967×10 ^-24 C ₁₄＝2.21672×10 ^-28

16

k＝0

C ₄＝-3.79715×10 ^-8 C ₆＝2.19518×10 ^-12

C ₈＝-9.40364×10 ^-17 C ₁₀＝3.33573×10 ^-21

C ₁₂＝-7.42012×10 ^-26 C ₁₄＝1.05652×10 ^-30

17

k＝0

C ₄＝-6.69596×10 ^-8 C ₆＝1.67561×10 ^-12

C ₈＝-6.18763×10 ^-17 C ₁₀＝2.65428×10 ^-21

C ₁₂＝-4.09555×10 ^-26 C ₁₄＝3.25841×10 ^-31

21

k＝0

C ₄＝-8.68772×10 ^-8 C ₆＝-1.30306×10 ^-12

C ₈＝-2.65902×10 ^-17 C ₁₀＝-6.56830×10 ^-21

C ₁₂＝3.66980×10 ^-25 C ₁₄＝-5.05595×10 ^-29

25

k＝0

C ₄＝-1.54049×10 ^-8 C ₆＝7.71505×10 ^-14

C ₈＝1.75760×10 ^-18 C ₁₀＝1.71383×10 ^-23

C ₁₂＝5.04584×10 ^-29 C ₁₄＝2.08622×10 ^-32

39

k＝0

C ₄＝-3.91974×10 ^-11 C ₆＝5.90682×10 ^-14

C ₈＝2.85949×10 ^-18 C ₁₀＝-1.01828×10 ^-22

C ₁₂＝2.26543×10 ^-37 C ₁₄＝-1.90645×10 ^-32

43

k＝0

C ₄＝8.33324×10 ^-8 C ₆＝1.42277×10 ^-11

C ₈＝-1.13452×10 ^-15 C ₁₀＝1.18459×10 ^-18

C ₁₂＝-2.83937×10 ^-22 C ₁₄＝5.01735×10 ^-26

(conditional respective value)

F1＝164.15mm

Y ₀＝17.0mm

R＝20.86mm

(1)F1/Y ₀＝9.66

(2)R/Y ₀＝1.227

Figure 6 shows that the lateral aberration of the 1st embodiment.In aberration figure, represent image height with Y respectively, represent centre wavelength 193.3060nm with solid line, be represented by dotted lines 193.306nm+0.1pm=193.3059nm, with single-point line expression 193.306nm-0.1pm=193.3059nm.In addition, the souvenir among Fig. 6 also is same in Fig. 8 of back.By the aberration figure of Fig. 6 as can be known, in the 1st embodiment, although guarantee very large picture side numerical aperture (NA=1.04) and bigger effective exposure area ER, to the exposure light of the wide 193.306nm ± 0.1pm of wavelength, chromatic aberration is able to good correction.

[the 2nd embodiment]

Figure 7 shows that the lens about the projection optical system of the 2nd embodiment of this example constitute.With reference to Fig. 7, in projection optical system PL about the 2nd embodiment, the 1st imaging optical system G1 disposes the convex surface that the makes aspherical shape biconvex lens L11 towards the wafer side successively from the grating side along the direct of travel of light, biconvex lens L12, with the concave surface of aspherical shape negative meniscus lens L13, the 1st concave mirror CM1 towards the grating side.And, in the 1st imaging optical system G1, be used for and be reflected and light by negative meniscus lens L13 by the 1st concave mirror CM1, the reflecting surface of the 2nd concave mirror CM2 that reflects to the 2nd imaging optical system G2 is configured between biconvex lens L12 and negative meniscus lens L13 and does not comprise on the zone of optical axis AX.Therefore, biconvex lens L11 and biconvex lens L12 constitute the 1st lens group with positive refracting power.And the 1st concave mirror CM1 is formed near the concave mirror that is disposed the pupil face of the 1st imaging optical system G1.

On the other hand, the 2nd imaging optical system G2 along the direct of travel of light from the grating side successively by the positive concave-convex lens L21 that makes concave surface towards the grating side, biconvex lens L22, with the concave surface of aspherical shape positive concave-convex lens L23 towards the wafer side, with the convex surface of aspherical shape negative meniscus lens L24 towards the grating side, with the negative meniscus lens L25 of convex surface towards the grating side, with the concave surface of aspherical shape biconcave lens L26 towards the grating side, with the positive concave-convex lens L27 of concave surface towards the grating side, with the convex surface of aspherical shape negative meniscus lens L28 towards the grating side, biconvex lens L29, biconvex lens L210, with the positive concave-convex lens L211 of convex surface towards the grating side, aperture diaphragm AS, with the positive concave-convex lens L212 of concave surface towards the grating side, biconvex lens L213, with the concave surface of aspherical shape positive concave-convex lens L214 towards the wafer side, with the positive concave-convex lens L215 of convex surface towards grating, with the concave surface of aspherical shape positive concave-convex lens L216 towards the wafer side, the plane is constituted towards the plano-convex lens L217 of wafer example (border lens Lb).

In the 2nd embodiment, in plano-convex lens L217 and the light path between the wafer W as border lens Lb, configuration planopaallel plate Lp.And, in the light path between light path between border lens Lb and planopaallel plate Lp and planopaallel plate Lp and wafer W, fill the medium Lm that constitutes by deionized water.And in the 2nd embodiment, the transmission member (lens) that constitutes projection optical system PL is by quartz or fluorite (CaF ₂) form.Specifically, lens L13, lens L216 and lens L217 (Lb) are formed by fluorite, and other lens and planopaallel plate Lp are formed by quartz.That is, in the transmission member that constitutes the 2nd imaging optical system G2, about 88% transmission member is formed by quartz.

In addition, in the 2nd embodiment, all reflecting members (the 1st concave mirror CM1, the 2nd concave mirror CM2) that constitute all transmission member (lens, planopaallel plate) of projection optical system PL and have power are configured along single optical axis AX.Like this, in the 2nd embodiment, from light scioptics L11～L13 of grating R, incident the 1st concave mirror CM1.By the light that the 1st concave mirror CM1 is reflected, scioptics L13 and the 2nd concave mirror CM2, near the intermediary image of formation grating R the 1st concave mirror CM1.By the light that the 2nd concave mirror CM2 is reflected, scioptics L21～L217 (Lb) and planopaallel plate Lp, the reduced image of formation grating R on wafer W.

In the 2nd embodiment, be 193.306nm as the oscillation center wavelength of ArF exciplex laser light of exposure light, near 193.306nm, quartzy refractive index with whenever+wavelength variations-1.591 * 10 of 1pm ^-6Ratio change, and with whenever-wavelength variations+1.591 * 10 of 1pm ^-6Ratio change.In other words, near 193.306nm, the dispersion (dn/d λ) of quartzy refractive index is-1.591 * 10 ^-5/ pm.And, near 193.306nm, the refractive index of fluorite with whenever+wavelength variations-0.980 * 10 of 1pm ^-6Ratio change, and with whenever-wavelength variations+0.980 * 10 of 1pm ^-6Ratio change.In other words, near 193.306nm, the dispersion of the refractive index of fluorite (dn/d λ) is-0.980 * 10 ^-6/ pm.

In addition, near 193.306nm the refractive index of deionized water with whenever+wavelength variations-2.6 * 10 of 1pm ^-6Ratio change, and with whenever-wavelength variations+2.6 * 10 of 1pm ^-6Ratio change.In other words, near 193.306nm, the dispersion of the refractive index of deionized water (dn/d λ) is-2.6 * 10 ^-6/ pm.Like this, in the 2nd embodiment, refractive index to the quartz of centre wavelength 193.306nm is 1.5603261, is 1.560325941 to the refractive index of the quartz of 193.306nm+0.1pm=193.3061nm, is 1.560326259 to the refractive index of the quartz of 193.306nm-0.1pm=193.3059nm.

And, refractive index to the fluorite of centre wavelength 193.306nm is 1.5014548, refractive index to the fluorite of 193.306nm+0.1pm=193.3061nm is 1.501454702, is 1.501454898 to the refractive index of the fluorite of 193.306nm-0.1pm=193.3059nm.In addition, refractive index to the deionized water of centre wavelength 193.306nm is 1.47, refractive index to the deionized water of 193.306nm+0.1pm=193.3061nm is 1.46999974, is 1.47000026 to the refractive index of the deionized water of 193.306nm-0.1pm=193.3059nm.In following table (2), disclose set of data value about the projection optical system PL of the 2nd embodiment.

[table 2]

(the main set of data)

λ＝193.306nm

β＝+1/4

NA＝1.04

Ro＝17.0mm

Ri＝11.5mm

H＝26.0mm

D＝4.0mm

R＝20.86mm

Y ₀＝17.0mm

(the optical component set of data)

The face number	r	d	n	Optical component
The face number	r	d	n	Optical component		(grating face)	72.14497
1	295.66131	46.03088	1.5603261	(L11)		(grating face)	72.14497
1	295.66131	46.03088	1.5603261	(L11)	2*	-228.07826	1.02581
3	847.63618	40.34103	1.5603261	(L12)	2*	-228.07826	1.02581
3	847.63618	40.34103	1.5603261	(L12)	4	-207.90948	124.65407
5*	-154.57886	13.00000	1.5603261	(L13)	4	-207.90948	124.65407

6	-667.19164	9.58580
6	-667.19164	9.58580			7	-209.52775	-9.58580		(CM1)
8	-667.19164	-13.00000	1.5603261	(L13)	7	-209.52775	-9.58580		(CM1)
8	-667.19164	-13.00000	1.5603261	(L13)	9*	-154.57886	-109.65407
10	2517.52751	147.23986		(CM2)	9*	-154.57886	-109.65407
10	2517.52751	147.23986		(CM2)	11	-357.71318	41.75496	1.5603261	(L21)
12	-196.81705	1.00000			11	-357.71318	41.75496	1.5603261	(L21)
12	-196.81705	1.00000			13	8379.53651	40.00000	1.5603261	(L22)
14	-454.81020	8.23083			13	8379.53651	40.00000	1.5603261	(L22)
14	-454.81020	8.23083			15	206.30063	58.07852	1.5603261	(L23)
16*	367.14898	24.95516			15	206.30063	58.07852	1.5603261	(L23)
16*	367.14898	24.95516			17*	258.66863	20.00000	1.5603261	(L24)
18	272.27694	274.16477			17*	258.66863	20.00000	1.5603261	(L24)
18	272.27694	274.16477			19	671.42370	49.62123	1.5603261	(L25)
20	225.79907	35.51978			19	671.42370	49.62123	1.5603261	(L25)
20	225.79907	35.51978			21*	-283.63484	15.10751	1.5603261	(L26)

6	-667.19164	9.58580
6	-667.19164	9.58580			22	261.37852	56.71822
23	-1947.68869	54.63076	1.5603261	(L27)	22	261.37852	56.71822
23	-1947.68869	54.63076	1.5603261	(L27)	24	-227.05849	5.77639
25*	788.97953	15.54026	1.5603261	(L28)	24	-227.05849	5.77639
25*	788.97953	15.54026	1.5603261	(L28)	26	460.12935	18.83954
27	1925.75038	56.54051	1.5603261	(L29)	26	460.12935	18.83954
27	1925.75038	56.54051	1.5603261	(L29)	28	-295.06884	1.00000
29	861.21046	52.50515	1.5603261	(L210)	28	-295.06884	1.00000
29	861.21046	52.50515	1.5603261	(L210)	30	-34592.86759	1.00000
31	614.86639	37.34179	1.5603261	(L211)	30	-34592.86759	1.00000
31	614.86639	37.34179	1.5603261	(L211)	32	39181.66426	1.00000
33	∞	46.27520		(AS)	32	39181.66426	1.00000
33	∞	46.27520		(AS)	34	-11881.91854	30.00000	1.5603261	(L212)
35	-631.95129	1.00000			34	-11881.91854	30.00000	1.5603261	(L212)
35	-631.95129	1.00000			36	1465.88641	39.89113	1.5603261	(L213)
37	-542.10144	1.00000			36	1465.88641	39.89113	1.5603261	(L213)
37	-542.10144	1.00000			38	336.45791	34.80369	1.5603261	(L214)
39*	2692.15238	1.00000			38	336.45791	34.80369	1.5603261	(L214)
39*	2692.15238	1.00000			40	112.42843	43.53915	1.5603261	(L215)

41	189.75478	1.00000
41	189.75478	1.00000			42	149.91358	42.41577	1.5603261	(L216)
43*	107.28888	1.06533			42	149.91358	42.41577	1.5603261	(L216)
43*	107.28888	1.06533			44	90.28791	31.06087	1.5603261	(L217：Lb)
45	∞	1.00000	1.47	(Lm)	44	90.28791	31.06087	1.5603261	(L217：Lb)
45	∞	1.00000	1.47	(Lm)	46	∞	3.00000	1.5603261	(Lp)
47	∞	5.00000	1.47	(Lm)	46	∞	3.00000	1.5603261	(Lp)

(wafer face)

(aspherical surface data)

2

k＝0

C ₄＝9.57585×10 ^-9 C ₆＝7.09690×10 ^-13

C ₈＝1.30845×10 ^-16 C ₁₀＝-5.52152×10 ^-22

C ₁₂＝4.46914×10 ^-26 C ₁₄＝-2.07483×10 ^-29

5 and 9 (with one side)

k＝0

C ₄＝1.16631×10 ^-8 C ₆＝6.70616×10 ^-13

C ₈＝-1.87976×10 ^-17 C ₁₀＝1.71587×10 ^-20

C ₁₂＝-2.34827×10 ^-24 C ₁₄＝1.90285×10 ^-28

16

k＝0

C ₄＝-4.06017×10 ^-8 C ₆＝2.22513×10 ^-12

C ₈＝-9.05000×10 ^-17 C ₁₀＝3.29839×10 ^-21

C ₁₂＝-7.46596×10 ^-26 C ₁₄＝1.06948×10 ^-30

17

k＝0

C ₄＝-6.69592×10 ^-8 C ₆＝1.42455×10 ^-12

C ₈＝-5.65516×10 ^-17 C ₁₀＝2.48078×10 ^-21

C ₁₂＝-2.91653×10 ^-26 C ₁₄＝1.53981×10 ^-31

21

k＝0

C ₄＝-7.97186×10 ^-8 C ₆＝-1.32969×10 ^-12

C ₈＝-1.98377×10 ^-17 C ₁₀＝-4.95016×10 ^-21

C ₁₂＝2.53886×10 ^-25 C ₁₄＝-4.16817×10 ^-29

25

k＝0

C ₄＝-1.55844×10 ^-8 C ₆＝7.27672×10 ^-14

C ₈＝1.90600×10 ^-18 C ₁₀＝1.21465×10 ^-23

C ₁₂＝-7.56829×10 ^-29 C ₁₄＝1.86889×10 ^-32

39

k＝0

C ₄＝-6.91993×10 ^-11 C ₆＝7.80595×10 ^-14

C ₈＝3.31216×10 ^-18 C ₁₀＝-1.39159×10 ^-22

C ₁₂＝3.69991×10 ^-27 C ₁₄＝-4.01347×10 ^-32

43

k＝0

C ₄＝8.30019×10 ^-8 C ₆＝1.24781×10 ^-11

C ₈＝-9.26768×10 ^-16 C ₁₀＝1.08933×10 ^-18

C ₁₂＝-3.01514×10 ^-22 C ₁₄＝5.41882×10 ^-26

(conditional respective value)

F1＝178.98mm

Y ₀＝17.0mm

R＝20.86mm

(1)F1/Y ₀＝10.53

(2)R/Y ₀＝1.227

Figure 8 shows that the lateral aberration of the 2nd embodiment.By the aberration figure of Fig. 8 as can be known, also same in the 2nd embodiment with the 1st embodiment, although guarantee very large picture side numerical aperture (NA=1.04) and bigger effective exposure area ER, to the exposure light of the wide 193.306nm ± 0.1pm of wavelength, chromatic aberration is able to good correction.

Like this, in each embodiment, ArF exciplex laser light to wavelength 193.306nm, can guarantee that 1.04 height is as the side numerical aperture and can guarantee the effective exposure area (static exposure area) of the circular shape of 26.0mm * 4.0mm, in the rectangle exposure area of for example 26mm * 33mm, can carry out scan exposure with high-resolution to circuit pattern.

Below, the 3rd example of the present invention is described.Figure 9 shows that lens formation about the reflected refraction projection optical system of the 3rd example of the present invention., constitute by the 1st imaging optical system G1 of the intermediary image that forms the grating R1 that is positioned at the 1st, the 2nd imaging optical system G2 that the intermediary image of grating R1 is formed on the wafer (not shown) that is positioned at the 2nd successively from object side (being grating R1 side) about the reflected refraction projection optical system PL1 of the 3rd example.

The 1st imaging optical system G1 is by the lens group with positive refracting power (the 4th lens group or the 1st group) G11, lens L5 described later and 2 mirror M 1, and M2 constitutes.Lens group G11 plays and is used to make grating R1 side to form the effect of the heart far away.And, the 2nd imaging optical system G2 is by 2 mirror M 3 described later, and M4, lens group (the 1st lens group or the 3rd group) G21 with negative refracting power, lens group (the 2nd lens group) G22, aperture diaphragm AS1 with positive refracting power, lens group (the 3rd lens group) G23 with positive refracting power constitute.Lens group G21 is by carrying out the multiplying power adjustment, and relaxes the difference that difference caused by the picture visual angle of the extended light beam of catoptron 43, thereby suppresses the generation of aberration.And lens group C22 restrains the light beam of dispersing.And the form that lens group G23 has a big numerical aperture with the wafer side is carried out the optically focused of light beam.

Here, the order that lens group G11 passes through according to the light from object side (grating R1 grid) is by planopaallel plate L1, will form the concave surface of aspheric surface shape and constitute towards the positive concave-convex lens L4 of wafer side towards negative meniscus lens L2, the biconvex lens L3 of object side, the concave surface that will form the aspheric surface shape.

The light beam that has passed through positive concave-convex lens L4 is by making the negative meniscus lens (negative lens) 15 of concave surface towards object side, and be reflected by the concave mirror that makes concave surface towards object side (concave mirror or the 1st catoptron) M1, be reflected once more by negative meniscus lens 15, and by the convex reflecting mirror that makes convex surface towards the wafer side (light path splitting mirror or the 2nd catoptron) M2.Negative meniscus lens 15 plays the function that Petzval's condition is satisfied.

By convex reflecting mirror M2 institute beam reflected, for positively carry out towards the light beam of grating R1 side with separate towards the light path of the light beam of wafer side, form the intermediary image of grating R1 at position a shown in Figure 9.Here, position a position in the optical axis AX1 that will dispose concave mirror M1 as the plane of normal on or near it.

Then, by convex reflecting mirror M2 reflected beams, incident makes concave surface towards the concave mirror of object side (the 1st catoptron or the 3rd catoptron) M3, and is bent along the direction of the optical axis AX1 of orientating reflex refraction projection optical system PL1, and is penetrated by concave mirror 3.Restrained hastily by the light beam that concave mirror 3 is penetrated, and be reflected by the convex reflecting mirror that makes convex surface towards the wafer side (the 2nd catoptron or the 4th catoptron) M4, directly incident constitutes the negative meniscus lens L6 of lens group G21.Convex reflecting mirror M4 is by the difference that relaxes the light beam that is caused by the extended picture visual angle of concave mirror M3, and the generation of inhibition aberration.In addition, negative meniscus lens L5, concave mirror M1, convex reflecting mirror M2, concave mirror M3, convex reflecting mirror M4 constitute the 2nd group.

The order that lens group G21 passes through according to light is by the negative meniscus lens L6 that makes the convex surface that forms the aspheric surface shape towards object side, the concave surface that forms the aspheric surface shape is constituted towards the biconcave lens L7 of wafer side.Because negative meniscus lens L6 and biconcave lens L7 have the lens face of aspheric surface shape, thus large-numerical aperture can be had in the picture side of reflected refraction projection optical system PL1, and can obtain good imaging performance in the exposure area universe.

And, the order that lens group G22 passes through according to light is by the positive concave-convex lens L8, the biconvex lens L9 that make the concave surface that forms the aspheric surface shape towards object side, the concave surface that forms the aspheric surface shape is constituted towards positive concave-convex lens L10, biconvex lens L11, the biconvex lens L12 of object side.And, the order that lens group G23 passes through according to light, by the positive concave-convex lens L13 that makes convex surface towards object side, make convex surface towards the positive concave-convex lens L14 of object side, make convex surface towards the positive concave-convex lens L15 of object side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L16 of wafer side, convex surface is constituted towards object side and plano-convex lens L18 with positive refracting power.In addition, lens group G22, aperture diaphragm AS1, lens group G23 constitute the 4th group.

And it is Ma that reflected refraction projection optical system PL1 adopts the distance on the optical axis AX1 that makes mirror M 3 and aperture diaphragm AS1, when making the distance of grating R1 and wafer be L1, satisfies the formation of the condition of 0.17＜Ma/L＜0.6.By making Ma/L satisfy lower limit, can avoid the mechanicalness of concave mirror M3 and lens group G21 and lens group G22 and interfere.And, by making Ma/L satisfy the upper limit, can avoid the elongationization and the maximization of the total length of reflected refraction projection optical system PL1.Interfere in order positively to avoid mechanicalness, and positively avoid the elongationization and the maximization of the total length of projection optical system, adopt the formation of the condition that satisfies 0.5＜Ma/L＜0.2 better.

And, when the reflected refraction projection optical system PL1 of this example is in being used in exposure device, as the refractive index of establishing the environment among the reflected refraction projection optical system PL1 is 1, and then getting involved in the light path between lens L18 and wafer has refractive index to be about 1.4 pure water.Therefore, the exposure light wavelength in pure water forms about 0.71 (1/1.4) doubly, so the exploring degree is improved.

And, the optical axis AX1 that is contained among the reflected refraction projection optical system PL1 and has all optical elements of predetermined refracting power is configured in fact on the single straight line, and utilize the zone of the picture that reflected refraction projection optical system PL1 formed on wafer, for not comprising the axle exterior domain of optical axis AX1.Therefore, when making reflected refraction projection optical system PL1, can alleviate the manufacturing difficulty, and can carry out the relative adjustment of each optical component like a cork.

As utilizing reflected refraction projection optical system PL1 about the 3rd example, then form the intermediary image of grating R1 at the 1st imaging optical system G1, even so under the situation of the numerical aperture that increases reflected refraction projection optical system PL1, also can be easily and positively carry out towards the light beam of grating R1 side with separate towards the light path of the light beam of wafer side.And, because configuration has the lens group G21 of negative refracting power in the 2nd imaging optical system G2, thus the total length of reflected refraction projection optical system PL1 can be shortened, and be used to satisfy the adjustment of Petzval's condition like a cork.In addition, lens group G21 relaxes the difference that difference caused at the picture visual angle that utilizes the extended light beam of concave mirror M3, suppresses the generation of aberration.Therefore, even under the situation of the numerical aperture of grating R1 side that increases reflected refraction projection optical system PL1 in order to improve the exploring degree and wafer side, also can in the exposure area, universe obtain good imaging performance.

Below, with reference to diagram the 4th example of the present invention is described.Figure 10 shows that lens formation about the reflected refraction projection optical system of the 4th example of the present invention., constitute by the 1st imaging optical system G3 of the intermediary image that forms the grating R2 that is positioned at the 1st, the 2nd imaging optical system G4 that the intermediary image of grating R2 is formed on the wafer (not shown) that is positioned at the 2nd successively from object side (being grating R2 side) about the reflected refraction projection optical system PL2 of the 4th example.

The 1st imaging optical system G3 is by the lens group with positive refracting power (the 4th lens group or the 1st group) G31, lens L24 described later and 2 mirror M 21, and M22 constitutes.Lens group G31 plays and is used to make grating R2 side to form the effect of the heart far away.And, the 2nd imaging optical system G4 is by 2 mirror M 23 described later, and M24, lens group (the 1st lens group or the 3rd group) G41 with negative refracting power, lens group (the 2nd lens group) G42, aperture diaphragm AS2 with positive refracting power, lens group (the 3rd lens group) G43 with positive refracting power constitute.Lens group G41 is by carrying out the multiplying power adjustment, and relaxes the difference that difference caused by the picture visual angle of the extended light beam of mirror M 23, thereby suppresses the generation of aberration.And lens group G42 restrains the light beam of dispersing.And the form that lens group G43 has a big numerical aperture with the wafer side is carried out the optically focused of light beam.

Here, the order that lens group G31 passes through according to the light from object side (grating R2 grid) is made of towards positive concave-convex lens L22, the biconvex lens L23 of object side planopaallel plate L21, the concave surface that will form the aspheric surface shape.The light beam that has passed through biconvex lens L23 is by making negative meniscus lens (negative lens) L24 of concave surface towards the object example, and by the concave surface that forms the aspheric surface shape is reflected towards concave mirror (concave mirror or the 1st catoptron) M21 of object side, once more by negative meniscus lens L24, and by the convex surface that forms the aspheric surface shape is reflected towards convex reflecting mirror (light path splitting mirror or the 2nd catoptron) M22 of wafer side.Here, negative meniscus lens L24 plays the function that Petzval's condition is satisfied.

By convex reflecting mirror M22 reflected beams, for positively carry out towards the light beam of grating R2 side with separate towards the light path of the light beam of wafer side, form the intermediary image of grating R2 at position b shown in Figure 10.Here, position b position in the optical axis AX2 that will dispose concave mirror M21 as the plane of normal on or near it.

Then, by convex reflecting mirror M22 reflected beams, incident makes concave surface towards the concave mirror of object side (the 1st catoptron or the 3rd catoptron) M23, and is bent along the direction of the optical axis AX2 of orientating reflex refraction projection optical system PL2, and is reflected by concave mirror 23.Restrained hastily by the light beam that concave mirror M23 is penetrated, and be reflected by the convex reflecting mirror that makes the convex surface that forms the aspheric surface shape towards the wafer side (the 2nd catoptron or the 4th catoptron) M24, directly incident constitutes the biconcave lens L25 of lens group G41.Convex reflecting mirror M24 is by the difference that relaxes the light beam that is caused by the extended picture visual angle of concave mirror M23, and the generation of inhibition aberration.In addition, negative meniscus lens L24, concave mirror M21, convex reflecting mirror M22, concave mirror M23, convex reflecting mirror M24 constitute the 2nd group.

The order that lens group G41 passes through according to light is by the biconcave lens L25 that makes the concave surface that forms the aspheric surface shape towards object side, the concave surface that forms the aspheric surface shape is constituted towards the biconcave lens L26 of wafer side.Because biconcave lens L25 and biconcave lens L26 have the lens face of aspheric surface shape, thus large-numerical aperture can be had in the picture side of reflected refraction projection optical system PL2, and can obtain good imaging performance in the exposure area universe.

And, the order that lens group G42 passes through according to light, by the biconvex lens L27 that makes the convex surface that forms the aspheric surface shape towards object side, make the convex surface that forms the aspheric surface shape towards the negative meniscus lens L28 of object side, make concave surface towards the positive concave-convex lens L29 of object side, the convex surface that forms the aspheric surface shape is constituted towards the negative meniscus lens L30 of wafer side.And, the order that lens group G43 passes through according to light, by the positive concave-convex lens L31 that makes convex surface towards object side, make convex surface towards the positive concave-convex lens L32 of object side, make convex surface towards the positive concave-convex lens L33 of object side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L34 of wafer side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L35 of wafer side, convex surface is constituted towards the plano-convex lens L36 of object side.In addition, lens group G42, aperture diaphragm AS2, lens group G43 constitute the 4th group.

And it is M2 that reflected refraction projection optical system PL2 adopts the distance on the optical axis AX2 that makes mirror M 23 and aperture diaphragm AS2, when making the distance of grating R2 and wafer be L2, satisfies the formation of the condition of 0.17＜M2a/L2＜0.6.By making M2a/L2 satisfy lower limit, can avoid the mechanicalness of concave mirror M23 and lens group G41 and lens group G42 and interfere.And, by making M2a/L2 satisfy the upper limit, can avoid the elongationization and the maximization of the total length of reflected refraction projection optical system PL2.Interfere in order positively to avoid mechanicalness, and positively avoid the elongationization and the maximization of the total length of projection optical system, adopt the formation of the condition that satisfies 0.5＜M2a/L2＜0.2 better.

And, when the reflected refraction projection optical system PL2 of this example is in being used in exposure device, as the refractive index of establishing the environment among the reflected refraction projection optical system PL2 is 1, and then getting involved in the light path between lens L36 and wafer has refractive index to be about 1.4 pure water.Therefore, the exposure light wavelength in pure water forms about 0.71 (1/1.4) doubly, so the exploring degree is improved.

And, the optical axis AX2 that is contained among the reflected refraction projection optical system PL2 and has all optical elements of predetermined refracting power is configured in fact on the single straight line, and utilize the zone of the picture that reflected refraction projection optical system PL2 formed on wafer, for not comprising the axle exterior domain of optical axis AX2.Therefore, when making reflected refraction projection optical system PL2, can alleviate the manufacturing difficulty, and can carry out the relative adjustment of each optical component like a cork.

As utilizing reflected refraction projection optical system PL2 about the 4th example, then form the intermediary image of grating R2 at the 1st imaging optical system G3, even so under the situation of the numerical aperture that increases reflected refraction projection optical system PL2, also can be easily and positively carry out towards the light beam of grating R2 side with separate towards the light path of the light beam of wafer side.And, because configuration has the lens group G41 of negative refracting power in the 2nd imaging optical system G4, thus the total length of reflected refraction projection optical system PL1 can be shortened, and be used to satisfy the adjustment of Petzval's condition like a cork.In addition, lens group G41 relaxes the difference that difference caused at the picture visual angle that utilizes the extended light beam of concave mirror M23, suppresses the generation of aberration.Therefore, even under the situation of the numerical aperture of grating R2 side that increases reflected refraction projection optical system PL2 in order to improve the exploring degree and wafer side, also can in the exposure area, universe obtain good imaging performance.

In addition, in above-mentioned reflected refraction projection optical system PL1, adopt a kind ofly to make the formation of utilizing the light incident lens group G21 that convex reflecting mirror M4 reflected, come and go lens but also can between convex reflecting mirror M4 and lens group G21, dispose about the 3rd example.In this case, the light that is reflected by concave mirror M3 passes through to come and go lens, and is reflected by convex reflecting mirror M4, once more by coming and going lens, incident lens group G21.And, same in reflection and refraction optical system PL2 about the 4th example, adopts a kind ofly to make the formation of utilizing the light incident lens group G41 that convex reflecting mirror M24 reflected, but also can between convex reflecting mirror M24 and lens group G41, dispose round lens.

And, in reflected refraction projection optical system PL1, PL2 about above-mentioned each example, between the lens of the most close wafer side and wafer, get involved pure water is arranged, but when the refractive index of the environment in making reflection and refraction optical system PL1, PL2 is 1, also can get involved other the medium that has than 1.1 big refractive indexes.

Expression is about the value of the set of data of the reflected refraction projection optical system PL1 of the 3rd embodiment.In this set of data, as shown in figure 11, represent that with A making exposure light to utilize the optical element that constitutes reflected refraction projection optical system PL1 is radius centered by the optical axis AX1 of the reflected refraction projection optical system PL1 of the part of shading respectively, B represents that be radius centered with maximum as the optical axis AX1 of the reflected refraction projection optical system PL1 of degree, H represents that along the length of the directions X of effective exposure area C represents along the length of the Y direction of effective exposure area.And, in this set of data, represent numerical aperture with NA respectively, d presentation surface interval, n represents refractive index, λ represents centre wavelength.In addition, in this set of data, represent that with M the optical axis AX1 of mirror M 3 and not shown wafer goes up distance respectively, L represents the distance of grating R1 and wafer.

And table 3 is depicted as the optical component set of data about the reflected refraction projection optical system PL1 of the 3rd embodiment.In the optical component set of data shown in the table 3, represent the order that begins from object side with the face number of the 1st row respectively along the face of light going direction, the radius-of-curvature (mm) of each face is shown in the 2nd tabulation, the 3rd tabulation shows that it is face (mm) at interval at interval that the axle of each face is gone up, and the glass material of optical component is shown in the 4th tabulation.

And table 4 is depicted as about the lens of the employed lens face with aspheric surface shape of the reflected refraction projection optical system PL1 of the 3rd embodiment and the asphericity coefficient of catoptron.In the asphericity coefficient of table 4, the face number of the optical component set of data in aspheric surface number and the table 1 of the 1st row is corresponding.Show each aspheric curvature (1/mm) with the 2nd tabulation respectively, the asphericity coefficient of circular cone coefficient k and 12 times is shown in the 3rd tabulation, the asphericity coefficient of 4 times and 14 times is shown in the 4th tabulation, the asphericity coefficient of 6 times and 16 times is shown in the 5th tabulation, the asphericity coefficient of 8 times and 18 times is shown in the 6th tabulation, and the 7th tabulates shows the asphericity coefficient of 10 times and 20 times.

In addition, in the 3rd and the 4th embodiment, aspheric surface is represented with above-mentioned (a) formula.

(the 3rd embodiment)

(set of data)

Picture side NA:1.20

Exposure area: A=14mm B=18mm

H＝26.0mm C＝4mm

Imaging multiplying power: 1/4 times

Centre wavelength: 193.306nm

Quartzy refractive index: 1.5603261

Fluorite refractive index: 1.5014548

Liquid 1 refractive index: 1.43664

Quartzy (the dn/d λ) :-1.591E-6/pm that disperses

Fluorite disperses (dn/d λ) :-0.980E-6/pm

Liquid 1 disperses (dn/d λ) :-2.6E-6/pm

The respective value Ma=374.65mm L=1400mm of conditional

(table 3)

(the optical component set of data)

	Radius-of-curvature (mm)	Face is (mm) at interval	Medium
	Radius-of-curvature (mm)	Face is (mm) at interval	Medium	The 1st	∞	50.0000
1：	∞	8.0000	Quartz glass	The 1st	∞	50.0000
1：	∞	8.0000	Quartz glass	2：	∞	33.0000
3：	ASP1	25.0422	Quartz glass	2：	∞	33.0000
3：	ASP1	25.0422	Quartz glass	4：	-163.93521	1.0000
5：	355.31617	60.7391	Quartz glass	4：	-163.93521	1.0000
5：	355.31617	60.7391	Quartz glass	6：	-261.84115	1.0000
7：	277.33354	29.0109	Quartz glass	6：	-261.84115	1.0000
7：	277.33354	29.0109	Quartz glass	8：	ASP2	224.5285
9：	-176.61872	20.0000	Quartz glass	8：	ASP2	224.5285
9：	-176.61872	20.0000	Quartz glass	10：	-515.60710	10.4614
11：	ASP3	-10.4614	Catoptron	10：	-515.60710	10.4614
11：	ASP3	-10.4614	Catoptron	12：	-515.60710	-20.0000	Quartz glass
13：	-176.61872	-204.5285		12：	-515.60710	-20.0000	Quartz glass
13：	-176.61872	-204.5285		14：	ASP4	518.3706	Catoptron
15：	-517.39842	-241.3807	Catoptron	14：	ASP4	518.3706	Catoptron
15：	-517.39842	-241.3807	Catoptron	16：	-652.07494	171.3807	Catoptron
17：	ASP5	20.0000	Quartz glass	16：	-652.07494	171.3807	Catoptron
17：	ASP5	20.0000	Quartz glass	18：	171.59382	41.4743
19：	-245.94525	20.0000	Quartz glass	18：	171.59382	41.4743
19：	-245.94525	20.0000	Quartz glass	20：	ASP6	95.1415
21：	ASP7	28.3218	Quartz glass	20：	ASP6	95.1415
21：	ASP7	28.3218	Quartz glass	22：	-273.72261	1.0000
23：	578.31684	49.6079	Quartz glass	22：	-273.72261	1.0000
23：	578.31684	49.6079	Quartz glass	24：	-908.96420	1.0000
25：	ASP8	23.1140	Quartz glass	24：	-908.96420	1.0000
25：	ASP8	23.1140	Quartz glass	26：	-713.30127	1.0000

27：	1494.96847	33.6453	Quartz glass
27：	1494.96847	33.6453	Quartz glass	28：	-1392.26668	100.2723
29：	1382.10341	24.7691	Quartz glass	28：	-1392.26668	100.2723
29：	1382.10341	24.7691	Quartz glass	30：	-2944133.03600	5.3079
31：	∞	6.0869	Aperture diaphragm	30：	-2944133.03600	5.3079
31：	∞	6.0869	Aperture diaphragm	32：	596.90080	37.1298	Quartz glass

27：	1494.96847	33.6453	Quartz glass
27：	1494.96847	33.6453	Quartz glass	33：	524859.29548	1.0000
34：	367.83752	41.0495	Quartz glass	33：	524859.29548	1.0000
34：	367.83752	41.0495	Quartz glass	35：	1341.09674	1.0000
36：	180.61255	61.4605	Quartz glass	35：	1341.09674	1.0000
36：	180.61255	61.4605	Quartz glass	37：	464.28786	1.0000
38：	125.76761	49.2685	Quartz glass	37：	464.28786	1.0000
38：	125.76761	49.2685	Quartz glass	39：	ASP9	1.0000
40：	89.27467	40.3615	Quartz glass	39：	ASP9	1.0000
40：	89.27467	40.3615	Quartz glass	41：	ASP10	1.1254
42：	79.35451	37.7011	Quartz glass	41：	ASP10	1.1254
42：	79.35451	37.7011	Quartz glass	43：	∞	1.0000	Pure water
The 2nd	∞			43：	∞	1.0000	Pure water

(table 4)

(asphericity coefficient)

The aspheric surface number	Curvature	k	c4	c6	c8	c10
The aspheric surface number	Curvature	k	c4	c6	c8	c10			c12	c14	c16	c18	c20
									c12	c14	c16	c18	c20
							ASP1	-0.00714775	0.00000E+00	3.70121E-08	4.46586E-13	1.04583E-17	6.67573E-21
		-5.81072E-25	5.12689E-29	0.00000E+00	0.00000E+00	0.00000E+00	ASP1	-0.00714775	0.00000E+00	3.70121E-08	4.46586E-13	1.04583E-17	6.67573E-21
		-5.81072E-25	5.12689E-29	0.00000E+00	0.00000E+00	0.00000E+00
ASP2	0.00091632	0.00000E+00	2.33442E-08	-7.41117E-13	5.06507E-17	-4.32871E-21
ASP2	0.00091632	0.00000E+00	2.33442E-08	-7.41117E-13	5.06507E-17	-4.32871E-21			1.56850E-25	-1.33250E-30	0.00000E+00	0.00000E+00	0.00000E+00
									1.56850E-25	-1.33250E-30	0.00000E+00	0.00000E+00	0.00000E+00
							ASP3	-0.00346903	0.00000E+00	-1.67447E-09	-6.49516E-14	-5.93050E-19	-8.10217E-23
		3.21506E-27	-6.92598E-32	0.00000E+00	0.00000E+00	0.00000E+00	ASP3	-0.00346903	0.00000E+00	-1.67447E-09	-6.49516E-14	-5.93050E-19	-8.10217E-23
		3.21506E-27	-6.92598E-32	0.00000E+00	0.00000E+00	0.00000E+00
ASP4	-0.00076630	0.00000E+00	3.06927E-10	4.69465E-14	-6.39759E-19	2.45900E-23

		-8.28832E-28	1.58122E-32	0.00000E+00	0.00000E+00	0.00000E+00
		-8.28832E-28	1.58122E-32	0.00000E+00	0.00000E+00	0.00000E+00
ASP5	0.00125662	0.00000E+00	1.03544E-08	-1.28243E-12	-3.97225E-17	-8.03173E-21
ASP5	0.00125662	0.00000E+00	1.03544E-08	-1.28243E-12	-3.97225E-17	-8.03173E-21			3.90718E-25	1.64002E-30	0.00000E+00	0.00000E+00	0.00000E+00
									3.90718E-25	1.64002E-30	0.00000E+00	0.00000E+00	0.00000E+00
							ASP6	0.00507634	0.00000E+00	1.00543E-08	-3.32807E-12	-1.38706E-17	2.64276E-21
		1.41136E-25	-6.70516E-30	0.00000E+00	0.00000E+00	0.00000E+00	ASP6	0.00507634	0.00000E+00	1.00543E-08	-3.32807E-12	-1.38706E-17	2.64276E-21
		1.41136E-25	-6.70516E-30	0.00000E+00	0.00000E+00	0.00000E+00
ASP7	-0.00253727	0.00000E+00	-3.94919E-10	9.50312E-14	-1.02163E-18	-1.22660E-22
ASP7	-0.00253727	0.00000E+00	-3.94919E-10	9.50312E-14	-1.02163E-18	-1.22660E-22			3.11154E-27	-4.99394E-31	0.00000E+00	0.00000E+00	0.00000E+00
									3.11154E-27	-4.99394E-31	0.00000E+00	0.00000E+00	0.00000E+00
							ASP8	-0.00025661	0.00000E+00	-9.13443E-09	-8.61174E-14	4.52406E-19	-2.29061E-23
		5.86934E-28	-7.10478E-33	0.00000E+00	0.00000E+00	0.00000E+00	ASP8	-0.00025661	0.00000E+00	-9.13443E-09	-8.61174E-14	4.52406E-19	-2.29061E-23
		5.86934E-28	-7.10478E-33	0.00000E+00	0.00000E+00	0.00000E+00
ASP9	0.00458263	0.00000E+00	2.66745E-08	-3.15468E-13	7.16318E-17	1.41053E-21
ASP9	0.00458263	0.00000E+00	2.66745E-08	-3.15468E-13	7.16318E-17	1.41053E-21			-2.22512E-25	1.68093E-29	0.00000E+00	0.00000E+00	0.00000E+00
									-2.22512E-25	1.68093E-29	0.00000E+00	0.00000E+00	0.00000E+00
							ASP10	0.01117107	0.00000E+00	2.45701E-07	4.19793E-11	4.83523E-15	2.02242E-18
		-1.59072E-22	1.41579E-25	0.00000E+00	0.00000E+00	0.00000E+00	ASP10	0.01117107	0.00000E+00	2.45701E-07	4.19793E-11	4.83523E-15	2.02242E-18

Figure 12 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system PL1 of present embodiment and radial direction.In Figure 12, represent image height with Y respectively, dotted line is represented the lateral aberration of wavelength 193.3063nm, solid line is represented the lateral aberration of wavelength 193.3060nm, the lateral aberration of single-point line expression wavelength 193.3057nm.Shown in the lateral aberration figure of Figure 12, about the reflected refraction projection optical system PL1 of present embodiment, although have big numerical aperture and do not possess large-scale optical element, the universe in the exposure area, but the aberration quality of balance is revised well.

Expression is about the value of the set of data of the reflected refraction projection optical system PL2 of the 4th embodiment.And, table 5 be depicted as about the optical component set of data of the reflected refraction projection optical system PL2 of the 4th embodiment and, table 6 is depicted as about the lens of the employed lens face with aspheric surface shape of the reflected refraction projection optical system PL2 of the 4th embodiment and the asphericity coefficient of catoptron.In this set of data, the optical component set of data and asphericity coefficient, utilize the used identical symbol of symbol in about the set of data explanation of the reflected refraction projection optical system PL1 of the 3rd embodiment, describe.

(the 4th embodiment)

(set of data)

Picture side NA:1.20

Exposure area: A=13.5mm B=17.5mm

H＝26.0mm C＝4mm

Imaging multiplying power: 1/5 times

Centre wavelength: 193.306nm

Quartzy refractive index: 1.5603261

Fluorite refractive index: 1.5014548

Liquid 1 refractive index: 1.43664

Quartzy (the dn/d λ) :-1.591E-6/pm that disperses

Fluorite disperses (dn/d λ) :-0.980E-6/pm

Liquid 1 disperses (dn/d λ) :-2.6E-6/pm

The respective value Ma=424.85mm L=1400mm of conditional

(table 5)

(the optical component set of data)

	Radius-of-curvature (mm)	Face is (mm) at interval	Medium
	Radius-of-curvature (mm)	Face is (mm) at interval	Medium	The 1st	∞	74.5841
1：	∞	8.0000	Quartz glass	The 1st	∞	74.5841
1：	∞	8.0000	Quartz glass	2：	∞	33.0000
3：	ASP1	22.9375	Quartz glass	2：	∞	33.0000
3：	ASP1	22.9375	Quartz glass	4：	-238.83712	1.0000
5：	226.68450	59.5357	Quartz glass	4：	-238.83712	1.0000
5：	226.68450	59.5357	Quartz glass	6：	-908.69406	202.7480
7：	-165.20501	20.0000	Quartz glass	6：	-908.69406	202.7480
7：	-165.20501	20.0000	Quartz glass	8：	-669.93146	45.4417
9：	ASP2	-45.4417	Catoptron	8：	-669.93146	45.4417
9：	ASP2	-45.4417	Catoptron	10：	-669.93146	-20.0000	Quartz glass
11：	-165.20501	-182.7480		10：	-669.93146	-20.0000	Quartz glass
11：	-165.20501	-182.7480		12：	ASP3	476.5531	Catoptron
13：	-410.99944	-182.7518	Catoptron	12：	ASP3	476.5531	Catoptron
13：	-410.99944	-182.7518	Catoptron	14：	ASP4	164.9642	Catoptron

	Radius-of-curvature (mm)	Face is (mm) at interval	Medium
	Radius-of-curvature (mm)	Face is (mm) at interval	Medium	15：	ASP5	28.4827	Quartz glass
16：	239.45495	38.2383		15：	ASP5	28.4827	Quartz glass
16：	239.45495	38.2383		17：	-497.63245	20.0000	Quartz glass
18：	ASP6	89.6638		17：	-497.63245	20.0000	Quartz glass
18：	ASP6	89.6638		19：	ASP7	48.7904	Quartz glass
20：	-290.43245	1.0000		19：	ASP7	48.7904	Quartz glass
20：	-290.43245	1.0000		21：	1036.93127	60.0000	Quartz glass

22：	1015.63994	19.7285
22：	1015.63994	19.7285		23：	-2533.07822	63.4343	Quartz glass
24：	-278.02969	31.4485		23：	-2533.07822	63.4343	Quartz glass
24：	-278.02969	31.4485		25：	-1388.36824	40.8485	Quartz glass
26：	ASP8	1.0000		25：	-1388.36824	40.8485	Quartz glass
26：	ASP8	1.0000		27：	∞	1.0000	Aperture diaphragm
28：	479.05778	35.6437	Quartz glass	27：	∞	1.0000	Aperture diaphragm
28：	479.05778	35.6437	Quartz glass	29：	1637.29836	1.0000
30：	329.32813	44.1312	Quartz glass	29：	1637.29836	1.0000
30：	329.32813	44.1312	Quartz glass	31：	1053.37530	1.0000
32：	200.35146	57.3982	Quartz glass	31：	1053.37530	1.0000
32：	200.35146	57.3982	Quartz glass	33：	515.50441	1.0000
34：	118.38756	60.5521	Quartz glass	33：	515.50441	1.0000
34：	118.38756	60.5521	Quartz glass	35：	ASP9	1.0000
36：	81.03425	37.8815	Fluorite	35：	ASP9	1.0000
36：	81.03425	37.8815	Fluorite	37：	ASP10	1.0000
38：	81.71932	35.7388	Fluorite	37：	ASP10	1.0000
38：	81.71932	35.7388	Fluorite	39：	∞	1.0000	Pure water
The 2nd	∞			39：	∞	1.0000	Pure water

(table 6)

(asphericity coefficient)

The aspheric surface number	Curvature	k	c4	c6	c8	c10
The aspheric surface number	Curvature	k	c4	c6	c8	c10			c12	c14	c16	c18	c20
									c12	c14	c16	c18	c20
							ASP1	-0.00388454	0.00000E+00	2.22245E-08	1.47956E-13	-1.47977E-17	1.83827E-21
		-3.79672E-26	6.22409E-31	0.00000E+00	0.00000E+00	0.00000E+00	ASP1	-0.00388454	0.00000E+00	2.22245E-08	1.47956E-13	-1.47977E-17	1.83827E-21
		-3.79672E-26	6.22409E-31	0.00000E+00	0.00000E+00	0.00000E+00
ASP2	-0.00372368	0.00000E+00	-1.37639E-09	-9.27463E-14	-2.38568E-18	-4.78730E-22
ASP2	-0.00372368	0.00000E+00	-1.37639E-09	-9.27463E-14	-2.38568E-18	-4.78730E-22			4.14849E-26	-2.22906E-30	0.00000E+00	0.00000E+00	0.00000E+00
									4.14849E-26	-2.22906E-30	0.00000E+00	0.00000E+00	0.00000E+00
							ASP3	-0.00090790	0.00000E+00	-4.17158E-09	1.53090E-13	-4.47592E-18	4.68099E-22
		-2.64998E-26	6.12220E-31	0.00000E+00	0.00000E+00	0.00000E+00	ASP3	-0.00090790	0.00000E+00	-4.17158E-09	1.53090E-13	-4.47592E-18	4.68099E-22
		-2.64998E-26	6.12220E-31	0.00000E+00	0.00000E+00	0.00000E+00

ASP4	-0.00254948	0.00000E+00	1.56073E-09	1.95837E-14	1.84638E-18	-8.80727E-23
ASP4	-0.00254948	0.00000E+00	1.56073E-09	1.95837E-14	1.84638E-18	-8.80727E-23			1.81493E-27	-1.48191E-32	0.00000E+00	0.00000E+00	0.00000E+00
									1.81493E-27	-1.48191E-32	0.00000E+00	0.00000E+00	0.00000E+00
							ASP5	-0.00102929	0.00000E+00	-3.82817E-11	1.56504E-13	-2.89929E-16	1.68400E-20
		-5.96465E-25	1.20191E-29	0.00000E+00	0.00000E+00	0.00000E+00	ASP5	-0.00102929	0.00000E+00	-3.82817E-11	1.56504E-13	-2.89929E-16	1.68400E-20
		-5.96465E-25	1.20191E-29	0.00000E+00	0.00000E+00	0.00000E+00
ASP6	0.00541154	0.00000E+00	3.81649E-08	-1.10034E-12	-3.69090E-16	1.33858E-20
ASP6	0.00541154	0.00000E+00	3.81649E-08	-1.10034E-12	-3.69090E-16	1.33858E-20			6.34523E-25	-3.45549E-29	0.00000E+00	0.00000E+00	0.00000E+00
									6.34523E-25	-3.45549E-29	0.00000E+00	0.00000E+00	0.00000E+00
							ASP7	0.00102903	0.00000E+00	-3.14004E-08	2.87908E-13	-1.32597E-17	2.20315E-22
		-5.49818E-27	-4.97090E-32	0.00000E+00	0.00000E+00	0.00000E+00	ASP7	0.00102903	0.00000E+00	-3.14004E-08	2.87908E-13	-1.32597E-17	2.20315E-22
		-5.49818E-27	-4.97090E-32	0.00000E+00	0.00000E+00	0.00000E+00
ASP8	-0.00012579	0.00000E+00	-5.21260E-09	-2.97679E-14	-4.97667E-19	1.15081E-23
ASP8	-0.00012579	0.00000E+00	-5.21260E-09	-2.97679E-14	-4.97667E-19	1.15081E-23			-9.40202E-29	5.04787E-34	0.00000E+00	0.00000E+00	0.00000E+00
									-9.40202E-29	5.04787E-34	0.00000E+00	0.00000E+00	0.00000E+00
							ASP9	0.00403277	0.00000E+00	4.99776E-08	-8.99272E-13	6.60787E-17	4.38434E-22
		-4.24581E-26	4.81058E-30	0.00000E+00	0.00000E+00	0.00000E+00	ASP9	0.00403277	0.00000E+00	4.99776E-08	-8.99272E-13	6.60787E-17	4.38434E-22
		-4.24581E-26	4.81058E-30	0.00000E+00	0.00000E+00	0.00000E+00
ASP10	0.01060914	0.00000E+00	2.60785E-07	4.78050E-11	5.21548E-15	1.26891E-18
ASP10	0.01060914	0.00000E+00	2.60785E-07	4.78050E-11	5.21548E-15	1.26891E-18			1.53552E-22	4.32477E-26	0.00000E+00	0.00000E+00	0.00000E+00

Figure 13 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system PL2 of present embodiment and radial direction.In Figure 13, represent image height with Y respectively, dotted line is represented the lateral aberration of wavelength 193.3063nm, solid line is represented the lateral aberration of wavelength 193.3060nm, the lateral aberration of single-point line expression wavelength 193.3057nm.Shown in the lateral aberration figure of Figure 13, about the reflected refraction projection optical system PL2 of present embodiment, although have big numerical aperture and do not possess large-scale optical element, the universe in the exposure area, but the aberration quality of balance is revised well.

Below, with reference to diagram the 5th example of the present invention is described.Figure 14 shows that lens formation about the reflected refraction projection optical system of the 5th example of the present invention.About the reflected refraction projection optical system PL1 of the 5th example from object side (being grating R1 side), successively by the 1st imaging optical system G1 of the 1st intermediary image that forms the grating R1 that is positioned at the 1st and the 2nd intermediary image, the 2nd intermediary image of grating R1 is constituted being positioned at the 2nd imaging optical system G2 that carries out relaying on the 2nd the wafer (not shown).

The 1st imaging optical system G1 is made of the lens group with positive refracting power (field lens group) G11,6 mirror M 1～M6 described later.Lens group G11 plays and is used for distortion etc. is revised, and makes grating R1 side form the function of the heart far away.And, utilize the function of lens group G11, even depart under the situation of configuration from the desired position on optical axis AX1 direction at grating R1, the size of the picture of grating R1 can not change yet, so the performance of maintenance reflected refraction projection optical system PL1 that can be higher.

And, the 2nd imaging optical system G2 all is made of the transmissive optical element, is made of the lens group with positive refracting power (the 1st lens group) G21, lens group (the 2nd lens group) G22 with negative refracting power, lens group (the 3rd lens group) G23, aperture diaphragm AS1 with positive refracting power, lens group (the 4th lens group) G24 with positive refracting power.The 2nd imaging optical system G2 all is made of the transmissive optical element, so and without the load that light path is separated, therefore, can make the numerical aperture increase of the picture side of reflected refraction projection optical system PL1, and can on the 2nd, form the reduced image of high reduction magnification.Lens group G21～G24 advantageously brings into play function in order to satisfy Petzval's condition.And, by the function of lens group G21～G24, can avoid the maximization of the total length of reflected refraction projection optical system PL1.And, utilize lens group G21～G23, can carry out the correction of all aberrations such as comatic aberration.

Here, the order that lens G11 passes through according to the light from object side (grating R1 side) is by planopaallel plate L1, the concave surface that forms the aspheric surface shape is constituted towards positive concave-convex lens L2, biconvex lens L3, the biconvex lens L4 of object side.Light beam by biconvex lens L4 by the concave mirror M1 that makes the concave surface that forms the aspheric surface shape towards object side, make the convex surface that forms the aspheric surface shape towards the convex reflecting mirror M2 of wafer side, concave surface is reflected towards the concave mirror M3 of object side, form the 1st intermediary image.By mirror M 3 reflected beams, by the convex reflecting mirror M4 that makes convex surface towards the wafer side, make the concave surface that forms the aspheric surface shape towards the concave mirror M5 of object side, concave surface is reflected towards the concave mirror M6 of wafer side.

Here, because light beam not scioptics and by mirror M 1～M6 by continuous reflection, so, Petzval's condition is met like a cork by adjusting each mirror M 1～M6.And, the zone that can guarantee to be used to keep each mirror M 1～M6, and can carry out the maintenance of each mirror M 1～M6 like a cork.And, by the radius-of-curvature of each mirror M 1～M6 of change, can carry out the correction of curvature of the image like a cork.And, form the 2nd intermediary image by mirror M 6 reflected beams.

In this case, because dispose concave mirror M3 on the position away from optical axis AX1, and can utilize this concave mirror M3 to make beam condenser, so between each mirror M 1～M6, stay out of lens, bigger must the departing from of optical axis AX1 of light beam and reflected refraction projection optical system PL1 can be made, the interference of light beam can be avoided.And, by light beam is reflected continuously by 4 mirror M 3～M6, can avoid the maximization of the total length of reflected refraction projection optical system PL1.

The order that lens group G21 passes through according to light, by the positive concave-convex lens L5 that makes convex surface towards object side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L6 of wafer side, make convex surface towards the positive concave-convex lens L7 of object side, make convex surface towards the negative meniscus lens L8 of object side, the convex surface that forms the aspheric surface shape is constituted towards the negative meniscus lens L9 of object side.And lens group G22 is by the concave surface that forms the aspheric surface shape is constituted towards the biconcave lens L10 of wafer side.And, the order that lens group G23 passes through according to light, by the plano-convex lens L11 that makes the plane that forms the aspheric surface shape towards object side, make convex surface towards negative meniscus lens L12, the biconvex lens L13 of object side, convex surface is constituted towards positive concave-convex lens L14, the biconvex lens L15 of object side.

And, lens group G24 by biconvex lens L16, make convex surface towards the positive concave-convex lens L17 of object side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L18 of wafer side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L19 of wafer side, convex surface is constituted towards the plano-convex lens L20 of object side.

And it is M that reflected refraction projection optical system PL1 adopts the distance at the optical axis AX1 that makes mirror M 3 and aperture diaphragm AS1, when the distance of grating R1 and wafer is L, satisfies the formation of the condition of 0.2＜Mb/L＜0.7.When Mb/L surpasses down in limited time, be difficult to be configured for revising each all aberration particularly comatic aberration must obligato lens group G21～G23 each lens L5～L15, on correct position, be configured maintenance.That is,, can avoid the mechanicalness of concave mirror M3, lens group G21～G23 and interfere by making Mb/L satisfy lower limit.And, by making Mb/L satisfy the upper limit, can avoid the elongationization and the maximization of the total length of reflected refraction projection optical system PL1.For each lens L5～L15 more correctly is configured maintenance, positively avoid the maximization of the total length of reflected refraction projection optical system PL1, adopt the formation of the condition that satisfies 0.25＜Mb/L＜0.6 better.

In addition, in the 5th example, be between mirror M 3 and mirror M 4, to form the 1st intermediary image, but also can in any light path between mirror M 2 and the mirror M 4, form the 1st intermediary image.

Below, with reference to diagram, the 6th example of the present invention is described.Figure 15 shows that lens formation about the reflected refraction projection optical system of the 6th example of the present invention.About the reflected refraction projection optical system PL2 of the 6th example from object side (being grating R2 side), successively by the 1st imaging optical system G3 of the 1st intermediary image that forms the grating R1 that is positioned at the 1st and the 2nd intermediary image, the 2nd intermediary image of grating R2 is constituted being positioned at the 2nd imaging optical system G4 that carries out relaying on the 2nd the wafer (not shown).

The 1st imaging optical system G3 is made of the lens group with positive refracting power (field lens group) G31, lens L25 described later and 6 mirror M 11～M16.Lens group G31 plays and is used for distortion etc. is revised, and makes grating R2 side form the function of the heart far away.And, utilize the function of lens group G31, though at grating R2 in departing from from the desired position on the optical axis direction under the situation of configuration, the size of the picture of grating R2 can not change yet, so the performance of maintenance reflected refraction projection optical system PL2 that can be higher.

And, the 2nd imaging optical system G4 all is made of the transmissive optical element, is made of the lens group with positive refracting power (the 1st lens group) G41, lens group (the 2nd lens group) G42 with negative refracting power, lens group (the 3rd lens group) G43, aperture diaphragm AS2 with positive refracting power, lens group (the 4th lens group) G44 with positive refracting power.The 2nd imaging optical system G4 all is made of the transmissive optical element, so and without the load that light path is separated, therefore, can make the numerical aperture increase of the picture side of reflected refraction projection optical system PL2, and can on the 2nd, form the reduced image of high reduction magnification.Lens group G41～G44 advantageously brings into play function in order to satisfy Petzval's condition.And, by the formation of lens group G41～G44, can avoid the maximization of the total length of reflected refraction projection optical system PL2.And, utilize lens group G41～G43, can carry out the correction of all aberrations such as comatic aberration.

Here, the order that lens G31 passes through according to the light from object side (grating R2 side) is by planopaallel plate L21, the concave surface that forms the aspheric surface shape is constituted towards positive concave-convex lens L22, biconvex lens L23, the biconvex lens L24 of object side.The light beam that has passed through biconvex lens L24 is by making negative meniscus lens (negative lens) L25 of concave surface towards object side, and by the concave surface that forms the aspheric surface shape is reflected towards the concave mirror M11 of object side, and once more by negative meniscus lens L25.Passed through the light beam of negative meniscus lens L25,, formed the 1st intermediary image by the convex surface that forms the aspheric surface shape is reflected towards the convex reflecting mirror M12 of wafer side.By mirror M 12 reflected beams, by the concave mirror M13 that makes concave surface towards object side, make convex surface towards the convex reflecting mirror M14 of wafer side, make the concave surface that forms the aspheric surface shape towards the concave mirror M15 of object side, concave surface is reflected towards the concave mirror M16 of wafer side.Here, by adjusting negative meniscus lens L25, can carry out the correction of chromatic aberration like a cork, and Petzval's condition is met like a cork.And, by the radius-of-curvature of each mirror M 11～M16 of change, can carry out the correction of curvature of the image like a cork.And, form the 2nd intermediary image by mirror M 16 reflected beams.

In this case, because dispose concave mirror M13 on the position away from optical axis AX2, and can utilize this concave mirror M13 to make beam condenser, so between 4 mirror M 13～M16, stay out of bigger must the departing from of optical axis AX2 that lens can make light beam and reflected refraction projection optical system PL2, can avoid the interference of light beam.And, by light beam is reflected continuously by 4 mirror M 13～M16, can avoid the maximization of the total length of reflected refraction projection optical system PL2.

The order that lens group G41 passes through according to light, by the positive concave-convex lens L26 that makes convex surface towards object side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L27 of wafer side, make convex surface towards the positive concave-convex lens L28 of object side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L29 of wafer side, convex surface is constituted towards the negative meniscus lens L30 of object side.

And lens group G42 is by the concave surface that forms the aspheric surface shape is constituted towards the biconcave lens L31 of wafer side.And the order that lens group G43 passes through according to light is by the biconvex lens L32 that makes the concave surface that forms the aspheric surface shape towards object side, convex surface is constituted towards negative meniscus lens L33, biconvex lens L34, biconvex lens L35, the biconvex lens L36 of object side.And, lens group G44 by biconvex lens L37, make convex surface towards the positive concave-convex lens L38 of object side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L39 of wafer side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L40 of wafer side, convex surface is constituted towards the plano-convex lens L41 of object side.

And it is M2b that reflected refraction projection optical system PL2 adopts the distance at the optical axis AX2 that makes mirror M 13 and aperture diaphragm AS2, when the distance of grating R2 and wafer is L2, satisfies the formation of the condition of 0.2＜M2b/L2＜0.7.When M2b/L2 surpasses down in limited time, be difficult to be configured for revising each all aberration particularly comatic aberration must obligato lens group G41～G43 each lens L26～L36, on correct position, be configured maintenance.That is,, can avoid the mechanicalness of concave mirror M13, lens group G41～G43 and interfere by making M2b/L2 satisfy lower limit.And, by making M2b/L2 satisfy the upper limit, can avoid the elongationization and the maximization of the total length of reflected refraction projection optical system PL2.For each lens L26～L36 is configured maintenance on more correct position, positively avoid the maximization of the total length of reflected refraction projection optical system PL2, adopt the formation of the condition that satisfies 0.25＜M2b/L2＜0.6 better.

In addition, in the 6th example, be between mirror M 12 and mirror M 13, to form the 1st intermediary image, but also can in any light path between mirror M 12 and the mirror M 14, form the 1st intermediary image.

Below, with reference to diagram the 7th example of the present invention is described.Figure 16 shows that lens formation about the reflected refraction projection optical system of the 7th example of the present invention.About the reflected refraction projection optical system PL3 of the 7th example from object side (being grating R3 side), successively by the 1st imaging optical system G5 of the 1st intermediary image that forms the grating R3 that is positioned at the 1st and the 2nd intermediary image, the 2nd intermediary image of grating R3 is constituted being positioned at the 2nd imaging optical system G6 that carries out relaying on the 2nd the wafer (not shown).

The 1st imaging optical system G5 is made of the lens group with positive refracting power (field lens group) G51,6 mirror M 21～M26 described later.Lens group G51 plays and is used for distortion etc. is revised, and makes grating R2 side form the function of the heart far away.And, utilize the function of lens group G51, even depart under the situation of configuration from the desired position on optical axis AX3 direction at grating R3, the size of the picture of grating R3 can not change yet, so the performance of maintenance reflected refraction projection optical system PL3 that can be higher.

And, the 2nd imaging optical system G6 all is made of the transmissive optical element, is made of the lens group with positive refracting power (the 1st lens group) G61, lens group (the 2nd lens group) G62 with negative refracting power, lens group (the 3rd lens group) G63, aperture diaphragm AS3 with positive refracting power, lens group (the 4th lens group) G64 with positive refracting power.The 2nd imaging optical system G6 all is made of the transmissive optical element, so and load that separates without light path, therefore, the numerical aperture of the picture side of reflected refraction projection optical system PL3 is increased, and can be positioned at the reduced image that forms high reduction magnification on the 2nd the wafer.Lens group G61～G64 advantageously brings into play function in order to satisfy Petzval's condition.And, by the formation of lens group G61～G64, can avoid the maximization of the total length of reflected refraction projection optical system PL3.And, utilize lens group G61～G63, can carry out the correction of all aberrations such as comatic aberration.

Here, the order that lens G51 passes through according to the light from object side (grating R3 side) is by planopaallel plate L51, the concave surface that forms the aspheric surface shape is constituted towards positive concave-convex lens L52, biconvex lens L53, the biconvex lens L54 of object side.Passed through the light beam of biconvex lens L54, by the concave mirror M21 that makes the concave surface that forms the aspheric surface shape towards object side, make the convex surface that forms the aspheric surface shape towards the convex reflecting mirror M22 of wafer side, concave surface is reflected towards the concave mirror M23 of object side, form the 1st intermediary image.By mirror M 23 reflected beams, by the convex reflecting mirror M24 that makes convex surface towards the wafer side, make the convex surface that forms the aspheric surface shape towards the convex reflecting mirror M25 of object side, concave surface is reflected towards the concave mirror M26 of wafer side.

Here, because light beam not scioptics and by mirror M 21～M26 by continuous reflection, so, Petzval's condition is met like a cork by adjusting each mirror M 21～M26.And, the zone that can guarantee to be used to keep each mirror M 21～M26, and, can carry out the correction of curvature of the image like a cork by the radius-of-curvature that changes each mirror M 21～M26.And, form the 2nd intermediary image by mirror M 26 reflected beams.

In this case, because dispose concave mirror M23 on the position away from optical axis AX3, and can utilize this concave mirror M23 to make beam condenser, so between each mirror M 21～M26, stay out of lens, bigger must the departing from of optical axis AX3 of light beam and reflected refraction projection optical system PL3 can be made, the interference of light beam can be avoided.And, by light beam is reflected continuously by 4 mirror M 23～M26, can avoid the maximization of the total length of reflected refraction projection optical system PL3.

The order that lens group G61 passes through according to light, by biconvex lens L55, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L56 of wafer side, make convex surface towards the positive concave-convex lens L57 of object side, make convex surface towards the negative meniscus lens L58 of object side, the convex surface that forms the aspheric surface shape is constituted towards the negative meniscus lens L59 of object side.And lens group G62 is by the concave surface that forms the aspheric surface shape is constituted towards the biconcave lens L60 of wafer side.And, the order that lens group G63 passes through according to light, by the biconvex lens L61 that makes the convex surface that forms the aspheric surface shape towards object side, make convex surface towards negative meniscus lens L62, biconvex lens L63, the biconvex lens L64 of object side, concave surface is constituted towards the positive concave-convex lens L65 of object side.

And, the order that lens group G64 passes through according to light, by biconvex lens L66, make convex surface towards the positive concave-convex lens L67 of object side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L68 of wafer side, make the concave surface that forms the aspheric surface shape towards the positive concave-convex lens L69 of wafer side, convex surface is constituted towards the plano-convex lens L70 of object side.

And it is M3 that reflected refraction projection optical system PL3 adopts the distance at the optical axis AX3 that makes mirror M 23 and aperture diaphragm AS3, when the distance of grating R3 and wafer is L3, satisfies the formation of the condition of 0.2＜M3/L3＜0.7.When M3/L3 surpasses down in limited time, be difficult to be configured for revising each all aberration particularly comatic aberration must obligato lens group G61～G63 each lens L55～L65, on correct position, be configured maintenance.That is,, can avoid the mechanicalness of concave mirror M23, lens group G61～G63 and interfere by making M3/L3 satisfy lower limit.And, by making M3/L3 satisfy the upper limit, can avoid the elongationization and the maximization of the total length of reflected refraction projection optical system PL3.For each lens L55～L70 is configured maintenance on more correct position, positively avoid the maximization of the total length of reflected refraction projection optical system PL3, adopt the formation of the condition that satisfies 0.25＜M3/L3＜0.6 better.

In addition, in the 7th example, be between mirror M 23 and mirror M 24, to form the 1st intermediary image, but also can in any light path between mirror M 22 and the mirror M 24, form the 1st intermediary image.

And, reflected refraction projection optical system PL1～PL3 about the 5th to the 7th example, when being used for exposure device, as the refractive index of establishing the environment among reflected refraction projection optical system PL1～PL3 is 1, and then getting involved in the light path between plano-convex lens L20, L41, L70 and wafer has refractive index to be about 1.4 pure water (deionized water).Therefore, the exposure light wavelength in pure water forms about 0.71 (1/1.4) doubly, so the exploring degree is improved.

And, optical axis AX1～the AX3 that is contained among reflected refraction projection optical system PL1～PL3 and has all optical elements of predetermined refracting power in fact is configured on the single straight line, and utilize the zone of the picture that reflected refraction projection optical system PL1～PL3 formed on wafer, for not comprising the axle exterior domain of optical axis AX1～AX3.Therefore, when making reflected refraction projection optical system PL1～PL3, can alleviate the manufacturing difficulty, and can carry out the relative adjustment of each optical component like a cork.

As utilizing reflected refraction projection optical system PL1～PL3 about the 5th to the 7th example, because contain 6 mirror M 1～M6, M11～M16, M21～M26, even so increase in order to improve the exploring degree under the situation of numerical aperture of the grating R1～R3 side of reflected refraction projection optical system PL1～PL3 and wafer side, the total length of reflected refraction projection optical system PL1～PL3 is increased, and easily and positively carry out separating with light path to the light beam of wafer side to the light beam of grating R1～R3 side.

And, as utilizing reflected refraction projection optical system PL1～PL3 about the 5th to the 7th example, because, be inverted image so the 1st intermediary image forms erect image formed picture on wafer of inverted image the 2nd intermediary image formation grating R1～R3 of grating R1～R3 for forming 3 imaging optical systems of the 1st intermediary image and the 2nd intermediary image.Therefore, this reflected refraction projection optical system PL1～PL3 lift-launch is being carried out under the situation of scan exposure on the exposure device and to grating R1～R3 and wafer, the direction of scanning of grating R1～R3 and the direction of scanning of wafer form reverse direction, can change little form with all centers of gravity of exposure device and adjust like a cork.And, can alleviate the vibration that changes the reflected refraction projection optical system PL1～PL3 that is produced because of all centers of gravity of exposure device, and can in the exposure area, universe obtain good imaging performance.

And, in reflected refraction projection optical system PL1～PL3 about above-mentioned each example, be between the lens of the most close wafer side and wafer, to get involved pure water (deionized water), but the refractive index of the environment in making reflected refraction projection optical system PL1～PL3 is under 1 the situation, also can get involved other the medium that has than 1.1 big refractive indexes.

Below, expression is about the value of the set of data of the reflected refraction projection optical system PL1 of the 5th embodiment shown in Figure 14.In this set of data, as above-mentioned shown in Figure 11, represent that with A making exposure light to utilize the optical element that constitutes reflected refraction projection optical system PL1 is radius centered by the optical axis AX1 of the reflected refraction projection optical system PL1 of the part of shading respectively, B represents that be radius centered with maximum as the optical axis AX1 of the reflected refraction projection optical system PL1 of degree, H represents that along the length of the directions X of effective exposure area C represents along the length of the Y direction of effective exposure area.And, in this set of data, represent numerical aperture with NA respectively, d presentation surface interval, n represents refractive index, λ represents centre wavelength.In addition, in this set of data, represent that with M the optical axis AX1 of mirror M 3 and not shown wafer goes up distance respectively, L represents the distance of grating R1 and wafer.

And table 7 is depicted as the optical component set of data about the reflected refraction projection optical system PL1 of the 5th embodiment.In the optical component set of data shown in the table 7, represent the order that begins from object side with the face number of the 1st row respectively along the face of light going direction, the radius-of-curvature (mm) of each face is shown in the 2nd tabulation, the 3rd tabulation shows that it is face (mm) at interval at interval that the axle of each face is gone up, and the glass material of optical component is shown in the 4th tabulation.

And table 8 is depicted as about the lens of the employed lens face with aspheric surface shape of the reflected refraction projection optical system PL1 of the 5th embodiment and the asphericity coefficient of catoptron.In the asphericity coefficient of table 8, the face number of the optical component set of data in aspheric surface number and the table 1 of the 1st row is corresponding.Show each aspheric curvature (1/mm) with the 2nd tabulation respectively, the asphericity coefficient of circular cone coefficient k and 12 times is shown in the 3rd tabulation, the asphericity coefficient of 4 times and 14 times is shown in the 4th tabulation, the asphericity coefficient of 6 times and 16 times is shown in the 5th tabulation, the asphericity coefficient of 8 times and 18 times is shown in the 6th tabulation, and the 7th tabulates shows the asphericity coefficient of 10 times and 20 times.

In addition, in the 5th～the 7th embodiment, aspheric surface is represented with above-mentioned (a) formula.

(the 5th embodiment)

(set of data)

Picture side NA:1.20

Exposure area: A=14mm B=18mm

H＝26.0mm C＝4mm

Imaging multiplying power: 1/4 times

Centre wavelength: 193.306nm

Quartzy refractive index: 1.5603261

Fluorite refractive index: 1.5014548

Liquid 1 refractive index: 1.43664

Quartzy disperse (dn/d λ) :-1.591 * 10 ^-6/ pm

Fluorite disperses (dn/d λ) :-0.980 * 10 ^-6/ pm

Pure water (breaking away from son) disperses (dn/d λ) :-2.6 * 10 ^-6/ pm

The respective value Ma=524.49mm L=1400mm of conditional

(table 7)

(the optical component set of data)

	Radius-of-curvature (mm)	Face is (mm) at interval	Medium
	Radius-of-curvature (mm)	Face is (mm) at interval	Medium	The 1st	∞	45.0000
1：	∞	8.0000	Quartz glass	The 1st	∞	45.0000

2：	∞	9.4878
2：	∞	9.4878	3：	ASP1	25.3802	Quartz glass
4：	-244.04741	1.9583	3：	ASP1	25.3802	Quartz glass
4：	-244.04741	1.9583	5：	2654.01531	49.2092	Quartz glass
6：	-159.85154	1.1545	5：	2654.01531	49.2092	Quartz glass
6：	-159.85154	1.1545	7：	294.54453	34.3095	Quartz glass
8：	-572.08259	156.2051	7：	294.54453	34.3095	Quartz glass
8：	-572.08259	156.2051	9：	ASP2	-136.2051	Catoptron

2：	∞	9.4878
2：	∞	9.4878		10：	ASP3	412.6346	Catoptron
11：	-418.20026	-205.0204	Catoptron	10：	ASP3	412.6346	Catoptron
11：	-418.20026	-205.0204	Catoptron	12：	-604.04130	160.2153	Catoptron
13：	ASP4	-211.6245	Catoptron	12：	-604.04130	160.2153	Catoptron
13：	ASP4	-211.6245	Catoptron	14：	320.60531	226.6245	Catoptron
15：	224.13260	25.2194	Quartz glass	14：	320.60531	226.6245	Catoptron
15：	224.13260	25.2194	Quartz glass	16：	346.75878	1.0000
17：	215.47954	34.3600	Quartz glass	16：	346.75878	1.0000
17：	215.47954	34.3600	Quartz glass	18：	ASP5	1.0000
19：	266.87857	19.9995	Quartz glass	18：	ASP5	1.0000
19：	266.87857	19.9995	Quartz glass	20：	329.19442	1.0000
21：	196.43240	20.0000	Quartz glass	20：	329.19442	1.0000
21：	196.43240	20.0000	Quartz glass	22：	115.87410	6.4756
23：	ASP6	39.3045	Quartz glass	22：	115.87410	6.4756
23：	ASP6	39.3045	Quartz glass	24：	99.87482	55.9109
25：	-412.64757	24.7282	Quartz glass	24：	99.87482	55.9109
25：	-412.64757	24.7282	Quartz glass	26：	ASP7	94.8545
27：	ASP8	57.3966	Quartz glass	26：	ASP7	94.8545
27：	ASP8	57.3966	Quartz glass	28：	-227.16104	1.0000
29：	504.83819	20.0000	Quartz glass	28：	-227.16104	1.0000
29：	504.83819	20.0000	Quartz glass	30：	407.86902	12.3535
31：	595.98854	43.0398	Quartz glass	30：	407.86902	12.3535
31：	595.98854	43.0398	Quartz glass	32：	-2001.40538	1.0000
33：	711.19871	32.6046	Quartz glass	32：	-2001.40538	1.0000
33：	711.19871	32.6046	Quartz glass	34：	8598.79354	32.0466
35：	36209.93141	30.0000	Quartz glass	34：	8598.79354	32.0466
35：	36209.93141	30.0000	Quartz glass	36：	-1731.78793	1.0000

37：	∞	12.6069	Aperture diaphragm
37：	∞	12.6069	Aperture diaphragm	38：	503.84491	53.3626	Quartz glass
39：	-1088.61181	1.0000		38：	503.84491	53.3626	Quartz glass
39：	-1088.61181	1.0000		40：	192.53858	61.7603	Quartz glass
41：	521.19424	1.0000		40：	192.53858	61.7603	Quartz glass
41：	521.19424	1.0000		42：	122.79200	59.8433	Quartz glass
43：	ASP9	1.0000		42：	122.79200	59.8433	Quartz glass
43：	ASP9	1.0000		44：	79.97315	39.6326	Fluorite
45：	ASP10	1.0000		44：	79.97315	39.6326	Fluorite
45：	ASP10	1.0000		46：	84.68828	36.1715	Fluorite
47：	∞	1.0000	Pure water	46：	84.68828	36.1715	Fluorite
47：	∞	1.0000	Pure water	The 2nd	∞	0.0000

(table 8)

(asphericity coefficient)

The aspheric surface number	Curvature	k	c4	c6	c8	c10
The aspheric surface number	Curvature	k	c4	c6	c8	c10			c12	c14	c16	c18	c20
									c12	c14	c16	c18	c20
							ASP1	-0.00059023	0.00000E+00	-2.87641E-08	-1.70437E-11	2.46285E-15	-2.74317E-19
		2.07022E-23	-7.79530E-28	0.00000E+00	0.00000E+00	0.00000E+00	ASP1	-0.00059023	0.00000E+00	-2.87641E-08	-1.70437E-11	2.46285E-15	-2.74317E-19
		2.07022E-23	-7.79530E-28	0.00000E+00	0.00000E+00	0.00000E+00
ASP2	-0.00205780	0.00000E+00	22.50612E-09	2.95240E-14	4.37607E-18	-5.55238E-22
ASP2	-0.00205780	0.00000E+00	22.50612E-09	2.95240E-14	4.37607E-18	-5.55238E-22			3.88749E-26	-1.13016E-30	0.00000E+00	0.00000E+00	0.00000E+00
									3.88749E-26	-1.13016E-30	0.00000E+00	0.00000E+00	0.00000E+00
							ASP3	-0.00058562	0.00000E+00	-6.92554E-09	1.39659E-13	-1.09871E-18	3.37519E-23
		-1.45573E-27	2.27951E-30	0.00000E+00	0.00000E+00	0.00000E+00	ASP3	-0.00058562	0.00000E+00	-6.92554E-09	1.39659E-13	-1.09871E-18	3.37519E-23
		-1.45573E-27	2.27951E-30	0.00000E+00	0.00000E+00	0.00000E+00
ASP4	-0.00123249	0.00000E+00	1.93713E-09	1.07185E-12	-3.34552E-16	3.54315E-20
ASP4	-0.00123249	0.00000E+00	1.93713E-09	1.07185E-12	-3.34552E-16	3.54315E-20			-5.95219E-24	3.41899E-28	0.00000E+00	0.00000E+00	0.00000E+00
									-5.95219E-24	3.41899E-28	0.00000E+00	0.00000E+00	0.00000E+00
							ASP5	0.00020189	0.00000E+00	1.37544E-07	-1.06394E-11	7.70843E-17	4.90298E-20
		-3.23126E-24	6.76814E-29	0.00000E+00	0.00000E+00	0.00000E+00	ASP5	0.00020189	0.00000E+00	1.37544E-07	-1.06394E-11	7.70843E-17	4.90298E-20
		-3.23126E-24	6.76814E-29	0.00000E+00	0.00000E+00	0.00000E+00
ASP6	0.00588235	0.00000E+00	2.41559E-07	-1.03766E-11	-6.75114E-17	1.11214E-19

		-9.45408E-24	3.57981E-28	0.00000E+00	0.00000E+00	0.00000E+00
		-9.45408E-24	3.57981E-28	0.00000E+00	0.00000E+00	0.00000E+00
ASP7	0.00664255	0.00000E+00	2.62150E-08	-9.25408E-12	-1.77845E-16	5.60675E-20
ASP7	0.00664255	0.00000E+00	2.62150E-08	-9.25408E-12	-1.77845E-16	5.60675E-20			-2.81549E-24	6.89450E-30	0.00000E+00	0.00000E+00	0.00000E+00
									-2.81549E-24	6.89450E-30	0.00000E+00	0.00000E+00	0.00000E+00
							ASP8	0.00000000	0.00000E+00	-1.26430E-08	1.64939E-13	-6.24373E-18	2.07576E-22
		-5.07100E	1.49848E-31	0.00000E+00	0.00000E+00	0.00000E+00	ASP8	0.00000000	0.00000E+00	-1.26430E-08	1.64939E-13	-6.24373E-18	2.07576E-22
		-5.07100E	1.49848E-31	0.00000E+00	0.00000E+00	0.00000E+00
ASP9	0.00345726	0.00000E+00	5.92282E-08	-1.56640E-12	1.38582E-16	-4.07966E-21
ASP9	0.00345726	0.00000E+00	5.92282E-08	-1.56640E-12	1.38582E-16	-4.07966E-21			1.49819E-25	1.10869E-30	0.00000E+00	0.00000E+00	0.00000E+00
									1.49819E-25	1.10869E-30	0.00000E+00	0.00000E+00	0.00000E+00
							ASP10	0.01038095	0.00000E+00	2.42802E-07	4.29662E-11	1.62230E-15	6.50272E-19
		3.23667E-22	-9.21777E-26	0.00000E+00	0.00000E+00	0.00000E+00	ASP10	0.01038095	0.00000E+00	2.42802E-07	4.29662E-11	1.62230E-15	6.50272E-19

Figure 17 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system PL1 of present embodiment and radial direction.In Figure 17, represent image height with Y respectively, dotted line is represented the lateral aberration of wavelength 193.3063nm, solid line is represented the lateral aberration of wavelength 193.3060nm, the lateral aberration of single-point line expression wavelength 193.3057nm.Shown in the lateral aberration figure of Figure 17, about the reflected refraction projection optical system PL1 of present embodiment, although have big numerical aperture and do not possess large-scale optical element, the universe in the exposure area, but the aberration quality of balance is revised well.

Below, expression is about the set of data of the reflected refraction projection optical system PL2 of the 6th embodiment shown in Figure 15.And, Figure 9 shows that the optical component set of data about the reflected refraction projection optical system PL2 of the 6th embodiment.And table 10 is depicted as about the lens of the employed lens face with aspheric surface shape of the reflected refraction projection optical system PL2 of the 6th embodiment and the asphericity coefficient of catoptron.In this set of data, the optical component set of data and asphericity coefficient, utilize and describe about the symbol that employed symbol is identical in the explanation of the reflection and refraction optical system PL1 of the 5th embodiment.

(the 6th embodiment)

(set of data)

Picture side NA:1.20

Exposure area: A=13mm B=17mm

H＝26.0mm C＝4mm

Imaging multiplying power: 1/4 times

Centre wavelength: 193.306nm

Quartzy refractive index: 1.5603261

Fluorite refractive index: 1.5014548

Liquid 1 refractive index: 1.43664

Quartzy disperse (dn/d λ) :-1.591 * 10 ^-6/ pm

Fluorite disperses (dn/d λ) :-0.980 * 10 ^-6/ pm

Pure water (breaking away from son) disperses (dn/d λ) :-2.6 * 10 ^-6/ pm

The respective value Mb=482.14mm L=1400mm of conditional

(table 9)

(the optical component set of data)

	Radius-of-curvature (mm)	Face is (mm) at interval	The glass material name
	Radius-of-curvature (mm)	Face is (mm) at interval	The glass material name	The 1st	∞	50.9535
1：	∞	8.0000	Quartz glass	The 1st	∞	50.9535
1：	∞	8.0000	Quartz glass	2：	∞	12.7478
3：	ASP1	32.5506	Quartz glass	2：	∞	12.7478
3：	ASP1	32.5506	Quartz glass	4：	-184.43053	1.0000
5：	532.87681	45.9762	Quartz glass	4：	-184.43053	1.0000
5：	532.87681	45.9762	Quartz glass	6：	-271.53626	1.3173
7：	374.46315	38.0103	Quartz glass	6：	-271.53626	1.3173
7：	374.46315	38.0103	Quartz glass	8：	-361.42951	147.1771
9：	-389.08052	20.0000	Quartz glass	8：	-361.42951	147.1771
9：	-389.08052	20.0000	Quartz glass	10：	-594.49774	5.5356
11：	ASP2	-5.5356	Catoptron	10：	-594.49774	5.5356
11：	ASP2	-5.5356	Catoptron	12：	-594.49774	-20.00000	Quartz glass
13：	-389.08052	-127.0301		12：	-594.49774	-20.00000	Quartz glass
13：	-389.08052	-127.0301		14：	ASP3	430.8932	Catoptron

	Radius-of-curvature (mm)	Face is (mm) at interval	The glass material name
	Radius-of-curvature (mm)	Face is (mm) at interval	The glass material name	15：	-450.43913	-215.6393	Catoptron
16：	-704.67689	163.6952	Catoptron	15：	-450.43913	-215.6393	Catoptron
16：	-704.67689	163.6952	Catoptron	17：	ASP4	-206.3833	Catoptron
18：	317.07489	228.3275	Catoptron	17：	ASP4	-206.3833	Catoptron
18：	317.07489	228.3275	Catoptron	19：	248.60032	30.8186	Quartz glass
20：	964.03405	1.0000		19：	248.60032	30.8186	Quartz glass
20：	964.03405	1.0000		21：	170.07823	20.0000	Quartz glass
22：	ASP5	1.0778		21：	170.07823	20.0000	Quartz glass
22：	ASP5	1.0778		23：	174.13726	29.8902	Quartz glass
24：	294.93424	1.0798		23：	174.13726	29.8902	Quartz glass
24：	294.93424	1.0798		25：	160.77849	33.1276	Quartz glass
26：	ASP6	9.4275		25：	160.77849	33.1276	Quartz glass
26：	ASP6	9.4275		27：	1185.57325	20.0000	Quartz glass
28：	103.90360	46.9708		27：	1185.57325	20.0000	Quartz glass

29：	-676.67026	24.5184	Quartz glass
29：	-676.67026	24.5184	Quartz glass	30：	ASP7	83.5410
31：	ASP8	47.4275	Quartz glass	30：	ASP7	83.5410
31：	ASP8	47.4275	Quartz glass	32：	-317.19307	1.0000
33：	688.27957	20.0000	Quartz glass	32：	-317.19307	1.0000
33：	688.27957	20.0000	Quartz glass	34：	513.64357	11.2866
35：	883.25368	40.1774	Quartz glass	34：	513.64357	11.2866
35：	883.25368	40.1774	Quartz glass	36：	-959.41738	1.0000
37：	1222.93397	34.5841	Quartz glass	36：	-959.41738	1.0000
37：	1222.93397	34.5841	Quartz glass	38：	-1403.11949	16.9031
39：	2169.40706	37.3055	Quartz glass	38：	-1403.11949	16.9031
39：	2169.40706	37.3055	Quartz glass	40：	-889.78387	1.0000
41：	∞	9.8461	Aperture diaphragm	40：	-889.78387	1.0000
41：	∞	9.8461	Aperture diaphragm	42：	458.32781	52.3568	Quartz glass
43：	-1741.66958	1.0000		42：	458.32781	52.3568	Quartz glass
43：	-1741.66958	1.0000		44：	215.86566	59.3939	Quartz glass
45：	659.70674	1.0000		44：	215.86566	59.3939	Quartz glass
45：	659.70674	1.0000		46：	134.64784	58.8510	Quartz glass
47：	ASP9	1.0004		46：	134.64784	58.8510	Quartz glass
47：	ASP9	1.0004		48：	96.99608	49.9011	Quartz glass
49：	ASP10	1.0194		48：	96.99608	49.9011	Quartz glass
49：	ASP10	1.0194		50：	80.22245	40.8996	Quartz glass
51：	∞	1.0000	Pure water	50：	80.22245	40.8996	Quartz glass
51：	∞	1.0000	Pure water	The 2nd	∞

(table 10)

(asphericity coefficient)

The aspheric surface number	Curvature	k	c4	c6	c8	c10
The aspheric surface number	Curvature	k	c4	c6	c8	c10			c12	c14	c16	c18	c20
									c12	c14	c16	c18	c20
							ASP1	-0.00057910	0.00000E+00	-9.03366E-08	3.28394E-12	-4.06402E-16	2.52900E-20
		-9.19294E-25	2.02082E-30	0.00000E+00	0.00000E+00	0.00000E+00	ASP1	-0.00057910	0.00000E+00	-9.03366E-08	3.28394E-12	-4.06402E-16	2.52900E-20
		-9.19294E-25	2.02082E-30	0.00000E+00	0.00000E+00	0.00000E+00
ASP2	-0.00243076	0.00000E+00	3.35976E-09	2.88286E-14	8.73468E-18	-7.00411E-22

		4.21327E-26	-9.88714E-31	0.00000E+00	0.00000E+00	0.00000E+00
		4.21327E-26	-9.88714E-31	0.00000E+00	0.00000E+00	0.00000E+00
ASP3	-0.00032257	0.00000E+00	-6.53400E-09	1.15036E-13	-9.61655E-19	8.51651E-23
ASP3	-0.00032257	0.00000E+00	-6.53400E-09	1.15036E-13	-9.61655E-19	8.51651E-23			-3.17817E-27	4.60017E-32	0.00000E+00	0.00000E+00	0.00000E+00
									-3.17817E-27	4.60017E-32	0.00000E+00	0.00000E+00	0.00000E+00
							ASP4	-0.00058501	0.00000E+00	2.54270E-09	6.81523E-13	-1.08474E-16	6.27615E-21
		-7.45415E-25	6.45741E-29	0.00000E+00	0.00000E+00	0.00000E+00	ASP4	-0.00058501	0.00000E+00	2.54270E-09	6.81523E-13	-1.08474E-16	6.27615E-21
		-7.45415E-25	6.45741E-29	0.00000E+00	0.00000E+00	0.00000E+00
ASP5	0.00574270	0.00000E+00	2.69000E-08	-1.93073E-12	-2.23058E-16	2.03519E-20
ASP5	0.00574270	0.00000E+00	2.69000E-08	-1.93073E-12	-2.23058E-16	2.03519E-20			-2.27002E-24	8.48621E-29	0.00000E+00	0.00000E+00	0.00000E+00
									-2.27002E-24	8.48621E-29	0.00000E+00	0.00000E+00	0.00000E+00
							ASP6	0.00281530	0.00000E+00	-7.99356E-08	1.14147E-11	-4.87397E-16	6.76022E-20
		-3.55808E-24	1.84260E-28	0.00000E+00	0.00000E+00	0.00000E+00	ASP6	0.00281530	0.00000E+00	-7.99356E-08	1.14147E-11	-4.87397E-16	6.76022E-20
		-3.55808E-24	1.84260E-28	0.00000E+00	0.00000E+00	0.00000E+00
ASP7	0.00867798	0.00000E+00	-1.01256E-08	-5.60515E-12	-6.85243E-17	2.18957E-20
ASP7	0.00867798	0.00000E+00	-1.01256E-08	-5.60515E-12	-6.85243E-17	2.18957E-20			-1.24639E-24	-1.61382E-29	0.00000E+00	0.00000E+00	0.00000E+00
									-1.24639E-24	-1.61382E-29	0.00000E+00	0.00000E+00	0.00000E+00
							ASP8	0.00000970	0.00000E+00	-1.68383E-08	1.90215E-13	-8.11478E-18	3.37339E-22
		-1.15048E-26	5.21646E-31	0.00000E+00	0.00000E+00	0.00000E+00	ASP8	0.00000970	0.00000E+00	-1.68383E-08	1.90215E-13	-8.11478E-18	3.37339E-22
		-1.15048E-26	5.21646E-31	0.00000E+00	0.00000E+00	0.00000E+00
ASP9	0.00313892	0.00000E+00	4.21089E-08	-8.07510E-13	5.31944E-17	-4.15094E-22
ASP9	0.00313892	0.00000E+00	4.21089E-08	-8.07510E-13	5.31944E-17	-4.15094E-22			-5.28946E-27	1.60653E-30	000000E+00	0.00000E+00	0.00000E+00
									-5.28946E-27	1.60653E-30	000000E+00	0.00000E+00	0.00000E+00
							ASP10	0.00959788	0.00000E+00	2.16924E-07	3.52791E-11	1.11831E-15	1.12987E-18
		-4.81835E-23	1.62262E-26	0.00000E+00	0.00000E+00	0.00000E+00	ASP10	0.00959788	0.00000E+00	2.16924E-07	3.52791E-11	1.11831E-15	1.12987E-18

Figure 18 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system PL2 of present embodiment and radial direction.In Figure 18, represent image height with Y respectively, dotted line is represented the lateral aberration of wavelength 193.3063nm, solid line is represented the lateral aberration of wavelength 193.3060nm, the lateral aberration of single-point line expression wavelength 193.3057nm.Shown in the lateral aberration figure of Figure 18, about the reflected refraction projection optical system PL2 of present embodiment, although have big numerical aperture and do not possess large-scale optical element, the universe in the exposure area, but the aberration quality of balance is revised well.

Below, expression is about the set of data of the reflected refraction projection optical system PL3 of the 7th embodiment shown in Figure 16.And, Figure 11 shows that the optical component set of data about the reflected refraction projection optical system PL3 of the 7th embodiment.And table 12 is depicted as about the lens of the employed lens face with aspheric surface shape of the reflected refraction projection optical system PL3 of the 7th embodiment and the asphericity coefficient of catoptron.In this set of data, the optical component set of data and asphericity coefficient, utilize and describe about the symbol that employed symbol is identical in the explanation of the reflection and refraction optical system PL1 of the 5th embodiment.

(the 7th embodiment)

(set of data)

Picture side NA:1.20

Exposure area: A=13mm B=17mm

H＝26.0mm C＝4mm

Imaging multiplying power: 1/5 times

Centre wavelength: 193.306nm

Quartzy refractive index: 1.5603261

Fluorite refractive index: 1.5014548

Liquid 1 refractive index: 1.43664

Quartzy disperse (dn/d λ) :-1.591 * 10 ^-6/ pm

Fluorite disperses (dn/d λ) :-0.980 * 10 ^-6/ pm

Pure water (breaking away from son) disperses (dn/d λ) :-2.6 * 10 ^-6/ pm

The respective value Mb=508.86mm L=1400mm of conditional

(table 11)

(the optical component set of data)

	Radius-of-curvature (mm)	Face is (mm) at interval	The glass material name
	Radius-of-curvature (mm)	Face is (mm) at interval	The glass material name	The 1st	∞	63.0159
1：	∞	8.0000	Quartz glass	The 1st	∞	63.0159
1：	∞	8.0000	Quartz glass	2：	∞	11.6805
3：	ASP1	30.7011	Quartz glass	2：	∞	11.6805
3：	ASP1	30.7011	Quartz glass	4：	-244.82575	1.0000
5：	520.7235	50.6283	Quartz glass	4：	-244.82575	1.0000
5：	520.7235	50.6283	Quartz glass	6：	-283.00136	1.0000
7：	455.76131	37.0794	Quartz glass	6：	-283.00136	1.0000
7：	455.76131	37.0794	Quartz glass	8：	-509.23840	143.7025
9：	ASP2	-123.7025	Catoptron	8：	-509.23840	143.7025
9：	ASP2	-123.7025	Catoptron	10：	ASP3	394.2980	Catoptron
11：	-398.57468	-201.7192	Catoptron	10：	ASP3	394.2980	Catoptron
11：	-398.57468	-201.7192	Catoptron	12：	-485.11237	157.8027	Catoptron
13：	ASP4	-206.6789	Catoptron	12：	-485.11237	157.8027	Catoptron
13：	ASP4	-206.6789	Catoptron	14：	329.37813	221.6789	Catoptron

	Radius-of-curvature (mm)	Face is (mm) at interval	The glass material name
	Radius-of-curvature (mm)	Face is (mm) at interval	The glass material name	15：	411.95851	28.1592	Quartz glass

16：	-3890.38387	1.1778
16：	-3890.38387	1.1778		17：	141.65647	33.4870	Quartz glass
18：	ASP5	1.0000		17：	141.65647	33.4870	Quartz glass
18：	ASP5	1.0000		19：	216.09570	28.6534	Quartz glass
20：	461.77835	1.0000		19：	216.09570	28.6534	Quartz glass
20：	461.77835	1.0000		21：	202.12479	20.2182	Quartz glass
22：	117.79321	2.6054		21：	202.12479	20.2182	Quartz glass
22：	117.79321	2.6054		23：	ASP6	20.0000	Quartz glass
24：	98.31887	51.9992		23：	ASP6	20.0000	Quartz glass
24：	98.31887	51.9992		25：	-251.39135	35.2622	Quartz glass
26：	ASP7	89.1855		25：	-251.39135	35.2622	Quartz glass
26：	ASP7	89.1855		27：	ASP8	42.0591	Quartz glass
28：	-303.33648	2.1164		27：	ASP8	42.0591	Quartz glass
28：	-303.33648	2.1164		29：	606.18864	28.5148	Quartz glass
30：	488.85229	11.9006		29：	606.18864	28.5148	Quartz glass
30：	488.85229	11.9006		31：	811.09260	45.2273	Quartz glass
32：	-813.38538	1.0000		31：	811.09260	45.2273	Quartz glass
32：	-813.38538	1.0000		33：	1012.41934	42.1336	Quartz glass
34：	-973.64830	21.5611		33：	1012.41934	42.1336	Quartz glass
34：	-973.64830	21.5611		35：	-32382.97410	29.5159	Quartz glass
36：	-1075.05682	1.0000		35：	-32382.97410	29.5159	Quartz glass
36：	-1075.05682	1.0000		37：	∞	6.3302	Aperture diaphragm
38：	371.59007	56.0505	Quartz glass	37：	∞	6.3302	Aperture diaphragm
38：	371.59007	56.0505	Quartz glass	39：	-4689.87645	9.3746
40：	204.82419	53.7618	Quartz glass	39：	-4689.87645	9.3746
40：	204.82419	53.7618	Quartz glass	41：	494.59116	1.0000
42：	125.95227	57.4813	Quartz glass	41：	494.59116	1.0000
42：	125.95227	57.4813	Quartz glass	43：	ASP9	1.0101
44：	92.58526	43.4772	Quartz glass	43：	ASP9	1.0101
44：	92.58526	43.4772	Quartz glass	45：	ASP10	1.0360
46：	85.28679	42.2466	Quartz glass	45：	ASP10	1.0360
46：	85.28679	42.2466	Quartz glass	47：	∞	1.0000	Pure water
The 2nd	∞			47：	∞	1.0000	Pure water

(table 12)

(asphericity coefficient)

The aspheric surface number	Curvature	k	c4	c6	c8	c10
The aspheric surface number	Curvature	k	c4	c6	c8	c10			c12	c14	c16	c18	c20
									c12	c14	c16	c18	c20
							ASP1	-0.0004476	0.00000E+00	-6.28600E-08	2.01003E-12	-1.86171E-16	4.72866E-21
		4.25382E-26	-8.36739E-30	0.00000E+00	0.00000E+00	0.00000E+00	ASP1	-0.0004476	0.00000E+00	-6.28600E-08	2.01003E-12	-1.86171E-16	4.72866E-21
		4.25382E-26	-8.36739E-30	0.00000E+00	0.00000E+00	0.00000E+00
ASP2	-0.0019308	0.00000E+00	5.30847E-09	2.39879E-13	1.88016E-18	-1.08670E-22
ASP2	-0.0019308	0.00000E+00	5.30847E-09	2.39879E-13	1.88016E-18	-1.08670E-22			1.55922E-27	-1.05341E-32	0.00000E+00	0.00000E+00	0.00000E+00
									1.55922E-27	-1.05341E-32	0.00000E+00	0.00000E+00	0.00000E+00
							ASP3	0.0000635	0.00000E+00	-1.46917E-08	2.39879E-13	1.88016E-18	-1.08670E-22
		1.55922E-27	-1.05341E-32	0.00000E+00	0.00000E+00	0.00000E+00	ASP3	0.0000635	0.00000E+00	-1.46917E-08	2.39879E-13	1.88016E-18	-1.08670E-22
		1.55922E-27	-1.05341E-32	0.00000E+00	0.00000E+00	0.00000E+00
ASP4	-0.0009742	0.00000E+00	2.25661E-09	8.15504E-13	-1.75777E-16	1.64720E-20
ASP4	-0.0009742	0.00000E+00	2.25661E-09	8.15504E-13	-1.75777E-16	1.64720E-20			-2.44697E-24	2.57932E-28	0.00000E+00	0.00000E+00	0.00000E+00
									-2.44697E-24	2.57932E-28	0.00000E+00	0.00000E+00	0.00000E+00
							ASP5	0.0045455	0.00000E+00	7.76937E-08	-8.42991E-12	3.25677E-16	8.77802E-23
		-2.71916E-25	-2.25230E-30	0.00000E+00	0.00000E+00	0.00000E+00	ASP5	0.0045455	0.00000E+00	7.76937E-08	-8.42991E-12	3.25677E-16	8.77802E-23
		-2.71916E-25	-2.25230E-30	0.00000E+00	0.00000E+00	0.00000E+00
0.0078125	0.00281530	0.00000E+00	1.83201E-07	-2.17156E-11	1.87637E-15	-2.53394E-19
0.0078125	0.00281530	0.00000E+00	1.83201E-07	-2.17156E-11	1.87637E-15	-2.53394E-19			1.70711E-23	-1.55669E-27	0.00000E+00	0.00000E+00	0.00000E+00
									1.70711E-23	-1.55669E-27	0.00000E+00	0.00000E+00	0.00000E+00
							ASP7	0.0063919	0.00000E+00	3.50299E-09	-5.60629E-12	-2.85922E-18	2.57458E-20
		-2.26908E-24	3.14291E-29	0.00000E+00	0.00000E+00	0.00000E+00	ASP7	0.0063919	0.00000E+00	3.50299E-09	-5.60629E-12	-2.85922E-18	2.57458E-20
		-2.26908E-24	3.14291E-29	0.00000E+00	0.00000E+00	0.00000E+00
ASP8	0.0001516	0.00000E+00	-1.73728E-08	2.07225E-13	-7.88040E-18	2.99860E-22
ASP8	0.0001516	0.00000E+00	-1.73728E-08	2.07225E-13	-7.88040E-18	2.99860E-22			-9.28797E-27	3.18623E-31	0.00000E+00	0.00000E+00	0.00000E+00
									-9.28797E-27	3.18623E-31	0.00000E+00	0.00000E+00	0.00000E+00
							ASP9	0.0037449	0.00000E+00	4.54024E-08	-8.98172E-13	6.42893E-17	5.94025E-22
		-6.11068E-26	4.37709E-30	0.00000E+00	0.00000E+00	0.00000E+00	ASP9	0.0037449	0.00000E+00	4.54024E-08	-8.98172E-13	6.42893E-17	5.94025E-22
		-6.11068E-26	4.37709E-30	0.00000E+00	0.00000E+00	0.00000E+00
ASP10	0.0093466	0.00000E+00	2.17665E-07	2.75156E-11	1.89892E-15	3.45960E-19

The aspheric surface number	Curvature	k	c4	c6	c8	c10
The aspheric surface number	Curvature	k	c4	c6	c8	c10			7.23960E-23	-1.19099E-26	0.00000E+00	0.00000E+00	0.00000E+00

Figure 19 shows that lateral aberration figure about the lateral aberration of the meridian direction of the reflected refraction projection optical system PL3 of present embodiment and radial direction.In Figure 19, represent image height with Y respectively, dotted line is represented the lateral aberration of wavelength 193.3063nm, solid line is represented the lateral aberration of wavelength 193.3060nm, the lateral aberration of single-point line expression wavelength 193.3057nm.Shown in the lateral aberration figure of Figure 19, about the reflected refraction projection optical system PL3 of present embodiment, although have big numerical aperture and do not possess large-scale optical element, the universe in the exposure area, but the aberration quality of balance is revised well.

About the projection optical system of each above-mentioned embodiment, all can be applicable in the projection aligner shown in Figure 1.As the projection aligner shown in Figure 1 of visiting scenic spot, be about 1.4 pure water because between projection optical system PL and wafer W, get involved the refractive index that has exposure light, so the effective numerical aperture of wafer W side is brought up to more than 1.0, can improve the exploring degree.And, as utilize projection aligner shown in Figure 1, because have the projection optical system PL that utilization is constituted about the reflected refraction projection optical system of above-mentioned each example, even so under the situation of the numerical aperture that increases grating side and wafer side, also can in projection optical system PL, easily and positively carry out towards the light beam of grating side with separate towards the light path of the light beam of wafer side.Therefore, can in the exposure area, universe obtain good imaging performance, fine pattern can be exposed well.

In addition, in projection aligner shown in Figure 1, because utilize ArF exciplex laser, so supply with the liquid that pure water is used as immersion exposure as exposure light.Pure water have semiconductor fabrication factory etc. can be light obtain in a large number, and photoresist on substrate (wafer) W and optical element (lens) etc. are not had dysgenic advantage.And because pure water does not have harmful effect to environment, and the content of impurity is extremely low, thus also can expect a kind of to wafer W the surface and the top end face of projection optical system PL on the effect of cleaning of the surface of set optical element.

Refractive index n to the pure water (water) of the exposure light about wavelength 193nm is roughly 1.44.Under the situation of utilizing ArF exciplex laser light (wavelength 193nm) as the light source of exposure light, on substrate, turned to the promptly about 134nm of 1/n by the short wavelength, obtain high-resolution.In addition, compare in the depth of focus and the air, expand as doubly promptly about 1.44 times of n approximately.

And, as liquid, also can use to the exposure light refractive index than 1.1 other big mediums.In this case, as liquid, can use exposure light is had transmittance, and make refractive index high as far as possible, and photoresist coated on projection optical system PL and the wafer W surface is kept stable liquid.

And, using F ₂Under the situation of laser light as exposure light, as liquid, can use can transmission F ₂The for example fluorine system oil and the liquid of crossing fluorinated polyether fluorine such as (PFPE) system of laser light.

And, the present invention also can be applicable to spy that spy that spy as Japanese Patent Laid Open Publication opens flat 10-163099 communique, Japanese Patent Laid Open Publication opens flat 10-214783 communique, Jap.P. and shows 2000-505958 communique etc. discloses, and has processed substrates such as wafer mounting and can be along the XY direction independently in the exposure device of two microscope carrier types of 2 mobile microscope carriers respectively.

In addition, under the situation of utilizing immersion method as described above, the numerical aperture of projection optical system PL (NA) also might become 0.9～1.3.Under the situation that the numerical aperture (NA) of such projection optical system PL increases, the known light of polarisation at random that uses with the light that is used as exposing also might worsen because of the polarisation effect makes imaging performance, so preferably utilize polarizing illumination.In this case, can carry out along the linear polarization illumination of the long side direction of the line pattern of the line of grating (mask) R and space pattern, from the pattern of grating (mask) R, make the more ejaculation of diffraction light of S polarized component (the polarization direction composition of the long side direction of pattern along the line).When being filled with liquid between photoresist coated on projection optical system PL and crystal column surface, compare with the situation that is filled with air (gas) between photoresist coated on projection optical system PL and crystal column surface, the diffraction light that helps to improve the S polarized component of contrast increases in the transmissivity of grating surface, even, also can obtain high imaging performance so surpass under 1.0 the situation in the numerical aperture (NA) of projection optical system PL.And the oblique incidence illumination (bipolar illumination) etc. of opening the long side direction of the sort of pattern along the line that flat 6-188169 communique discloses by the spy with phase-shifts mask and Japanese Patent Laid Open Publication makes up, and is more effective.

In the exposure device of above-mentioned example, can be by utilizing lighting device to grating (mask) throw light on (illumination operation), and the pattern that utilizes projection optical system that formed transfer printing on the mask is used exposes on the photonasty substrate (exposure process), can make micro element (semiconductor element, imaging apparatus, liquid crystal display cells, thin-film head etc.).Below, to by the exposure device that utilizes this example, forming predetermined circuit pattern, and an example of the method when obtaining semiconductor element as micro element as on the wafer of photonasty substrate etc., describe with reference to the process flow diagram of Fig. 9.

At first, in the step 301 of Figure 20, deposited metal film on 1 batch of wafer.In next step 302, on the metal film on this 1 batch of wafer, apply photoresist.Then, in step 303, utilize the exposure device of this example, the picture that makes the pattern on the mask is exposed transfer printing by this projection optical system successively on each shooting area on this 1 batch of wafer.Then, in step 304, carried out the video picture of the photoresist on this 1 batch of wafer after, in step 305, by on this 1 batch of wafer, the photoresist pattern being carried out etching as mask, and make with mask on the corresponding circuit pattern of pattern, be formed in each shooting area on each wafer.

Then, by the formation of carrying out the circuit pattern on upper strata more etc., and make element such as semiconductor element.As utilize above-mentioned semiconductor device manufacturing method, but throughput rate obtains having the semiconductor element of extremely fine circuit pattern well.In addition, in step 301～step 305, it is evaporation metal on wafer, on this metal film, apply photoresist again, expose then, video picture, etched each operation, but certainly also can be before these operations, after forming silicon oxide layer on the wafer, on this silicon oxide layer, apply photoresist, expose then, each operation such as video picture, etching.

And, in the exposure device of this example, form predetermined pattern (circuit pattern, electrode pattern etc.) by going up at sheet material (glass substrate), also can obtain liquid crystal display cells as micro element.Below, with reference to the process flow diagram of Figure 21, an example of this method is described.In Figure 21, pattern forms operation 401 and carries out said photoengraving operation, promptly utilizes the exposure device of this example, and the pattern of mask is carried out the transfer printing exposure on photonasty substrate (being coated with the glass substrate of photoresist etc.).Utilize this photoengraving operation, on the photonasty substrate, form the predetermined pattern contain a plurality of electrodes etc.Then, the substrate that is exposed is by each operations such as process video picture operation, etching work procedure, photoresist lift off operations, and the pattern that formation is scheduled on substrate, and to next color filter formation operation 402 transfer.

Then, color filter forms operation 402 and forms the group that makes a plurality of 3 points corresponding to R (red), G (green), B (indigo plant) and be rectangular and arrange, or the color filter that the group of 3 zonal filters of a plurality of R, G, B is arranged along the horizontal scanning line direction.Then, executive component assembling procedure 403 after color filter forms operation 402.In element assembling procedure 403, utilize to form by pattern that operation 401 is resulting to be had the substrates of predetermined pattern and form operation 402 resulting color filters etc. by color filter, assemble liquid crystal panel (liquid crystal cell).In element assembling procedure 403, for example form by pattern operation 401 resulting have the substrates of predetermined pattern and form between the operation 402 resulting color filters liquid by color filter go into liquid crystal, manufacturing liquid crystal panel (liquid crystal cell).

Then, by module assembling procedure 404, install and to make the liquid crystal panel of being assembled (liquid crystal cell) carry out each member such as electric circuit, back lighting lamp of display action, and finish liquid crystal display cells.As utilize the manufacture method of above-mentioned liquid crystal display cells, but throughput rate obtains having the liquid crystal display cells of atomic thin circuit pattern well.

As described above, projection optical system about the 1st form of the present invention, adopt a kind of mask that contains at least 2 catoptrons and the 1st side that the border lens of positive refracting power are arranged, and all transmission member and reflecting member are all along single optical axis configuration, and the formation with the effective imaging region that does not comprise optical axis, and the optical routing between border lens and the 2nd has than the medium of 1.1 big refractive indexes and fills.The result, the present invention can realize that all aberrations such as a kind of chromatic aberration and curvature of the image are revised well, have good imaging performance, and can be suppressed at the reflection loss on the optical surface well, guarantee the more small-sized projection optical system of big effective picture side numerical aperture.

And, as utilizing projection optical system about the 2nd form of the present invention, because in the 1st imaging optical system, form the 1st intermediary image, even so under the situation of the numerical aperture that increases projection optical system, also can be easily and positively carry out towards the light beam of the 1st side with separate towards the light path of the light beam of the 2nd side.And, because have the 1st lens that have negative refracting power at the 2nd imaging optical system, thus the total length of reflected refraction projection optical system can be shortened, and can be used to satisfy the adjustment of Petzval's condition like a cork.In addition, the 1st lens group relaxes the difference that difference caused by the picture visual angle of the extended light beam of the 1st field lens, suppresses the generation of aberration.Therefore, even under the situation of numerical aperture of object side that increases the reflected refraction projection optical system in order to improve the exploring degree and picture side, also can in the universe of exposure area, obtain good imaging performance.

And, as utilizing projection optical system about the 3rd form of the present invention, because contain 6 catoptrons at least, even so under the situation of numerical aperture of object side that increases the reflected refraction projection optical system in order to improve the exploring degree and picture side, also the total length of reflected refraction projection optical system be can not increase, and the 1st intermediary image and the 2nd intermediary image formed.Therefore, can be easily and positively carry out towards the light beam of the 1st side with separate towards the light path of the light beam of the 2nd side.And, because comprise at least 6 catoptrons and have the 2nd lens group of negative refracting power, so, Petzval's condition is satisfied like a cork, and carry out the correction of aberration like a cork by adjusting each catoptron or constituting the lens etc. of the 2nd lens group.

And as utilizing the projection optical system about the 3rd form of the present invention, because be 3 imaging systems, so the 1st intermediary image forms the 1st inverted image, the 2nd intermediary image forms the 1st erect image, and formed picture forms inverted image on the 2nd.Therefore, when reflected refraction projection optical system of the present invention is carried on exposure device, and when the 1st and the 2nd face carried out scan exposure, can make the 1st direction of scanning and the 2nd 's direction of scanning form reverse direction, and can make the form that the variation of all centers of gravity of exposure device dwindles and adjust like a cork.And, by the variation that reduces all centers of gravity of exposure device, the vibration that can alleviate the reflected refraction projection optical system, and can in exposure device, universe obtain good imaging performance.

Therefore, utilize the exposure device and the exposure method of projection optical system of the present invention, by having good imaging performance and having big effective picture side numerical aperture and then be the projection optical system of high-resolution, fine pattern can be carried out accurately the transfer printing exposure.And, utilize the exposure device be equipped with projection optical system of the present invention, and, can make good micro element by the high-precision projection exposure of the projection optical system by high exploring.

Claims

1. projection optical system for a kind of reduced image with the 1st is formed on the projection optical system of the reflection-refraction type on the 2nd, is applicable to immersion method, it is characterized in that:

Aforementioned projection optical system comprises at least 2 catoptrons and border lens, and the mask towards aforementioned the 1st of wherein aforementioned border lens has positive refracting power; And

Be configured in the light path between aforementioned border lens and aforementioned the 2nd, do not have the transmitance optical component of refracting power haply;

Aforementioned the 1st reduced image is formed on aforementioned the 2nd during, when the refractive index of the environment in the light path that makes aforementioned projection optical system was 1, the liquid that the optical routing between aforementioned border lens and aforementioned the 2nd has than 1.1 big refractive indexes was full of;

2. projection optical system according to claim 1 is characterized in that: aforementioned at least 2 catoptrons have at least 1 concave mirror.

3. projection optical system according to claim 2 is characterized in that: aforementioned projection optical system has the even number catoptron.

4. projection optical system according to claim 1 is characterized in that: the ejaculation pupil of aforementioned projection optical system does not have shaded areas.

5. projection optical system according to claim 1 is characterized in that: all effective imaging regions that aforementioned projection optical system has be present in the aforementioned lights between centers in the zone of preset distance.

6. projection optical system according to claim 1 is characterized in that: aforementioned projection optical system comprises the 1st imaging optical system that has at least 2 catoptrons and be used to form aforementioned the 1st intermediary image, be used for according to the 2nd imaging optical system that forms final picture from the light beam of aforementioned intermediary image on aforementioned the 2nd.

7. projection optical system according to claim 6 is characterized in that: aforementioned the 1st imaging optical system comprises the 1st lens group with positive refracting power, the 1st catoptron that disposes and the 2nd catoptron that disposes in the light path of the 1st catoptron and aforementioned intermediary image in the light path of the 1st lens group and aforementioned intermediary image.

8. projection optical system according to claim 7 is characterized in that:

Aforementioned the 1st catoptron is near the concave mirror of pupil face that is disposed at aforementioned the 1st imaging optical system;

In the formed round light path of aforementioned concave mirror, dispose 1 negative lens at least.

9. projection optical system according to claim 8 is characterized in that: aforementioned at least 1 negative lens and the aforementioned border lens that are disposed in aforementioned round light path are formed by fluorite.

10. projection optical system according to claim 7 is characterized in that:

At the focal length that makes aforementioned the 1st lens group is F1, when the maximum image height on aforementioned the 2nd is Y0, satisfies

The condition of 5＜F1/Y0＜15.

11. projection optical system according to claim 8 is characterized in that: aforementioned the 1st lens group has at least 2 positive lenss.

12. projection optical system according to claim 11 is characterized in that: the dioptric system of aforementioned the 2nd imaging optical system for only constituting by a plurality of transmission member.

13. projection optical system according to claim 11 is characterized in that: the transmission member of the number more than 70% of number that constitutes the transmission member of aforementioned the 2nd imaging optical system is formed by quartz.

14. projection optical system according to claim 1 is characterized in that comprising:

Unit the 1st is configured in the light path between aforementioned the 1st and aforementioned at least two catoptrons, and has positive refracting power;

Unit the 2nd is configured between aforementioned two catoptrons and aforementioned the 2nd at least.

15. projection optical system according to claim 14 is characterized in that: intermediary image is formed between aforementioned two catoptrons and the aforementioned Unit the 2nd at least.

16. projection optical system according to claim 14 is characterized in that: aforementioned at least two catoptrons comprise the 1st pair mirror and the 2nd pair mirror, and intermediary image is formed between aforementioned the 1st pair mirror and aforementioned the 2nd pair mirror.

17. projection optical system according to claim 1 is characterized in that also comprising at least one pupil position, and the lens that light path disposed between the most close the 2nd side pupil position and aforementioned the 2nd only are positive lens at least one pupil position.

18. an exposure device is a kind of exposure device that formed pattern on the mask is exposed on the photonasty substrate,

It is characterized in that, comprising:

Be used for will be on aforementioned mask formed aforementioned pattern picture, be formed on each the described projection optical system in the on-chip claim 1 to 17 of photonasty that sets on aforementioned the 2nd.

19. exposure device according to claim 18 is characterized in that: aforementioned illuminator is supplied with aforementioned the 2nd illumination light that forms the S polarisation.

20. exposure device according to claim 19, it is characterized in that: to aforementioned projection optical system, aforementioned mask and aforementioned photonasty substrate are relatively moved along predetermined direction, and the pattern of aforementioned mask is carried out projection exposure on aforementioned photonasty substrate.

21. an exposure method is a kind of exposure method that formed pattern on the mask is exposed on the photonasty substrate,

It is characterized in that, comprising:

Utilize each the described projection optical system in the claim 1 to 17, with the pattern of the aforementioned mask that disposed on aforementioned the 1st, the exposure process that on the photonasty substrate that is disposed on aforementioned the 2nd, exposes.

22. the manufacture method of a device is characterized in that, comprising:

Utilize each the described projection optical system in the claim 1 to 17, go up set predetermined pattern, the exposure process that on photonasty substrate set on the 2nd, exposes the 1st; And

The operation that aforementioned photonasty substrate is carried out video picture.