CN101226974B - Light emitting diode chip with microscope body structure - Google Patents
Light emitting diode chip with microscope body structure Download PDFInfo
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- CN101226974B CN101226974B CN2007100036075A CN200710003607A CN101226974B CN 101226974 B CN101226974 B CN 101226974B CN 2007100036075 A CN2007100036075 A CN 2007100036075A CN 200710003607 A CN200710003607 A CN 200710003607A CN 101226974 B CN101226974 B CN 101226974B
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- light
- emitting diode
- diode chip
- backlight unit
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Abstract
The invention discloses a light emitting diode chip with a micro lens body structure, which comprises a luminescence structure and a light guide lens body, after current is applied on the luminescence structure, rays are sent out from a light extraction surface, the light guide lens body is superimposed on the light extraction surface, and the rays are sent from the light guide surface of the light guide lens body. The light guide surface is equipped with a ring carinate portion and an astigmatism area, the rays which are close to a central optical axis of the light extraction surface where is an area with the strongest luminous intensity are deviated toward the direction which is far from the central optical axis, the rays which are far from the central optical axis are deviated toward the direction of the central optical axis, thereby obtaining rays whose intensity is uniform.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit, particularly relate to a kind of light-emitting diode chip for backlight unit that planar light source is provided with microscope body structure.
Background technology
Luminescence chip with microscope body structure can be with reference to figure 1, its light-emitting diode chip for backlight unit 100 for having encapsulated, visible its repeatedly put n type semiconductor layer 102 (N-typesemi-conductive layer) in regular turn among the figure on transparency carrier 101, active layers 104 (Active layer) and p type semiconductor layer 106 (P-type semi-conductive layer), secondly, again light-emitting diode chip for backlight unit 100 is placed (for example lead frame) on the substrate 110, and respectively with n type semiconductor layer 102 and p type semiconductor layer 106 usefulness leads 112,114 are directed to two electrode points 116 of base material 110 respectively, 118, again with overall package one lens 120, promptly finish a light-emitting diode chip for backlight unit 100 afterwards; Wherein, n type semiconductor layer 102 can be exchanged mutually with p type semiconductor layer 106.
Need only two electrode points 116 during use at base material 110,118 add electric current, can make 104 electron hole reciprocations of n type semiconductor layer 102 and p type semiconductor layer 106 and active layers and produce light 122, the wavelength of light 122 is relevant with the material of active layers 104.The light 122 of this generation is launched by lens 120 after reflection and refraction, so lens 120 have guiding rising angle and two functions of protection chip.
Though above-mentioned structure can produce light; but its inner total reflection is wayward with the direction that refraction will make light launch from lens; usually can produce as shown in Figure 2 lighting angle and intensity distribution; the design that can see this kind lens 120 among the figure make lighting angle 124 (angle that light emission is gone out) greatly about central optical axis 126 (0 degree position) just/negative 35 degree about between; while is the closer to the position of central optical axis; its intensity is strong more; can see among the figure that the strong zone 128 of luminous intensity is about central optical axis 126 just/negative 12 is spent; the uniformity of yet just representing this kind light source is not good; for the application of need use planar light source, and improper.
Technology about control light emission direction please refer to Fig. 3, it is the U.S. the 6th, 987, the technology that No. 613 patent proposed, can see among the figure that it is the light-emitting diode chip for backlight unit 130 of a flip-chip formula (Flip chip), above its top layer 132, set up a Fresnel lens layer 134 (Fresnel lens layer), therefore, the light 138 that sends from active layers 136 promptly can be in the inside of light-emitting diode chip for backlight unit 130 (the i.e. left surface of figure, right flank, downside) forms total reflection, and launch through Fresnel lens layer 134 in its exiting surface (figure above), because being, the characteristic of Fresnel lens layer 134 parallel the sending of light (being so-called flat quasi-optical) can be reached the purpose that produces planar light source.
Though above-mentioned the 6th, 987, No. 613 patents can reach the purpose of planar light source, but, be difficult for producing because the making flow process of Fresnel lens layer 134 is complicated.
In addition, the technology of making lens on the face that the irradiate light of light-emitting diode is gone out can be again with reference to figure 1, it is U.S.'s notion that the 7th, 023, No. 022 patent proposed, mainly be that micro mirror volume array layer 162 is set on light-emitting diode chip for backlight unit 160 exiting surfaces, so that light is unlikely total reflection when active layers 164 is emitted to micro mirror volume array layer 162, and can penetrate away, promote whole luminous efficacy, but, can not provide even planar light source for the direction of light.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode chip for backlight unit with microscope body structure, it is repeatedly put a photic zone and makes the mirror body on the exiting surface of light-emitting diode chip for backlight unit, borrow the effect of this mirror body, and the light that light-emitting diode sends is given homogenizing in lighting angle, make zone (near the zone of optical axis) that maximum light intensity distributes by outwards moving near the optical axis, make whole light-emitting zone become big and homogenizing (luminous intensity is stronger), so that even planar light source to be provided.
To achieve these goals, the invention provides a kind of light-emitting diode chip for backlight unit with microscope body structure, comprise a ray structure and a leaded light mirror body, ray structure is after being applied in electric current, promptly produce light and penetrate from an exiting surface, this exiting surface has a central optical axis, and having one, leaded light mirror body repeatedly puts a face and a light guiding surface, this leaded light mirror body is repeatedly put face with this and is repeatedly placed this exiting surface to penetrate this light by this light guiding surface, it is the annular ridge at center with this central optical axis that this light guiding surface has one, forming an annular optically focused zone, this light guiding surface from this annular ridge towards this central optical axis direction indent, to form an astigmatism zone.
Wherein, ray structure comprises at least one n type semiconductor layer, an active layers and at least one p type semiconductor layer, and this n type semiconductor layer and this p type semiconductor layer are after being applied in this electric current, and this active layers produces this light and penetrates from this exiting surface.
In addition, annular optically focused zone will be through the deflection of light in this annular optically focused zone and penetrate towards the direction of this central optical axis; And astigmatic zone will be penetrated towards the direction away from this central optical axis through the deflection of light in this astigmatism zone
Therefore, can borrow the deviation in astigmatic territory and make the stronger zone of overall optical intensity become big near the stronger zone of the luminous intensity of optical axis, the more weak zone of luminous intensity is then borrowed the deviation in annular optically focused zone and is focused near central optical axis, so that whole luminous improving uniformity, to satisfy the planar light source demands of applications.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is known light-emitting diode structure schematic diagram;
Fig. 2 is the lighting angle and the intensity distribution of known light-emitting diode;
Fig. 3 is known structural representation with light-emitting diode chip for backlight unit of microscope body structure;
Fig. 4 has the structural representation of the known light-emitting diode chip for backlight unit of microscope body structure for another;
Fig. 5 is the structural representation of first embodiment of the invention;
Fig. 6 is the light energy distribution figure of first embodiment of the invention;
Fig. 7 is the lighting angle and the intensity distribution of first embodiment of the invention;
Fig. 8 is the structural representation of second embodiment of the invention; And
Fig. 9 is the structural representation of third embodiment of the invention.
Wherein, Reference numeral:
100,130,160 light-emitting diode chip for backlight unit
101 transparency carriers
102 n type semiconductor layers
104 active layers
106 p type semiconductor layers
110 substrates
112,114 leads
116,118 electrode points
120 lens
122 light
124 lighting angles
126 central optical axis
The strong zone of 128 luminous intensities
132 top layers
134 Fresnel lens layers
136 active layers
138 light
162 micro mirror volume array layers
200,302 light-emitting diode chip for backlight unit
202,340 light
204 exiting surfaces
206 central optical axis
208 lighting angles
210 ray structures
212 transparency carriers
214,304 n type semiconductor layers
216,306,164 active layers
218,308 p type semiconductor layers
220 left sides
222 downsides
224 right sides
230,320 leaded light mirror bodies
232 repeatedly put face
234 light guiding surfaces
236,238,322,324 annular ridge
240 astigmatism zones
310 reflector
312,314 electrodes
Embodiment
Please refer to Fig. 5, structural representation for first embodiment of the invention, among the figure as seen, light-emitting diode chip for backlight unit 200 with microscope body structure comprises ray structure 210 and leaded light mirror body 230, wherein ray structure 210 is after being applied in electric current, promptly produce light 202 and penetrate from an exiting surface 204, this exiting surface 204 has a central optical axis 206; And leaded light mirror body 230 is a micro mirror body and has one and repeatedly put a face 232 and a light guiding surface 234, this leaded light mirror body 230 is repeatedly put face 232 with this and is repeatedly placed this exiting surface 204 to penetrate this light by this light guiding surface 234, this light guiding surface 234 has one with this central optical axis 206 annular ridge 236 that is the center, 238, to form an annular optically focused zone, this light guiding surface 234 from this annular ridge 236,238 towards these central optical axis 206 direction indents, to form an astigmatism zone 240.
The light that above-mentioned ray structure 210 penetrates can be visible light (optical wavelength between 380 nanometers (nm) to 760 nanometers), ultraviolet light (optical wavelength is less than 380 nanometers) and infrared light (optical wavelength is greater than 760 nanometers).
Above-mentioned ray structure 210 is to generate a n type semiconductor layer 214, an active layers 216 and at least one p type semiconductor layer 218 in regular turn with semiconductor technology on a transparency carrier 212, n type semiconductor layer 214 and p type semiconductor layer 218 after being applied in electric current (promptly from two electrodes 226,228 apply electric current), active layers 216 promptly produces light and penetrates from exiting surface 204; Exiting surface 204 herein is the face of accompanying drawing top, after that is to say that light 202 sends from active layers, can to all the winds penetrate, this moment is (when the left side 220 of figure, downside 222 and right side 224) when it touches non-exiting surface 204, promptly can produce total reflection, till light 202 penetrated from exiting surface 204, just, exiting surface 204 was defined as the face that light can directly penetrate away from this face.
The central optical axis 206 of above-mentioned exiting surface 202 is the center of whole exiting surface 202, if exiting surface 202 is square or rectangulars (from the depression angle of figure), then central optical axis 206 is the intersection of diagonal position, structure with light-emitting diode 200, this central optical axis 206 is the most intensive parts of whole light-emitting diode 200 light, the just the strongest part of luminous intensity.
Above-mentioned leaded light mirror body 230 is a light-transmitting materials, penetrate away for light 202, this kind light-transmitting materials can for but be not limited to: optical glass (as optical glass having high refractive index), semi-conducting material (as three or five (III-V) family semi-conducting material, two or six (II-VI) family semi-conducting material, high index of refraction organic semiconducting materials), organic compound (as the high index of refraction organic compound) etc.; Micro mirror body 230 mainly is to generate a hyaline layer above p type semiconductor layer 218 when making, again with etching (Etching) form annular ridge 236 thereafter, 238 and astigmatic regional 240, this annular ridge 236 wherein, 238 vertical views at figure are seen as one to be the annulus at center with central optical axis 206 and to be a convex curved surface, astigmatism zone 240 then is the inner sunken face of a circle of this annulus radially inner side, so that penetrate towards direction away from this central optical axis 206 through astigmatic regional 240 light 202 deviations, the zone of maximum light intensity distribution just is outside moving by near borrow astigmatism zone 240 central optical axis 206 deviation, though the brightness of its hot spot may die down, the whole uniformity improves.
Above-mentioned annular ridge 236,238 are arranged at the inboard of lighting angle 208 (please refer to Fig. 7) and are a convex curved surface, this annular ridge 236,238 convex curved surface is a continuous curve surface with the inner sunken face in astigmatism zone 240, make when light 202 process annular ridge 236, during 238 (annular optically focused zones), will penetrate towards the direction of this central optical axis 206 because of the deviation in annular optically focused zone, so the more weak light of lighting angle 208 inner edges is in central optical axis 206 direction sets, near the central optical axis 206 light 202 is then dispersed towards radial outside because of astigmatic regional 240, so just can form uniform surface light source, this point is found in Fig. 6 and Fig. 7, the strongest whole luminous intensity zone (for example with hot spot intensity 50% with interior calculating, because of leaded light mirror body 230 is extended to just/negative 45 position of spending of central optical axis 206, obvious essence effect of the present invention.
The above-mentioned face 232 of repeatedly putting is mutual two corresponding faces with light guiding surface 234, just repeatedly place exiting surface 204 and repeatedly put face 232, make light 202 after exiting surface 204 passes, directly to pass from light guiding surface 234, and because of annular ridge 236 on the light guiding surface 234,238 with the suitable configuration in astigmatism zone 240, and the light of launching 202 is given homogenizing.
Have again, please refer to Fig. 8, it is second embodiment of the present invention figure, it is repeatedly to be equipped with leaded light mirror body 320 on a flip-chip formula (Flip chip) luminescence chip 302, by the annular ridge 322 on the leaded light mirror body 320,324 and the suitable setting in astigmatism zone 326, and be able to light 340 homogenizing that luminescence chip 302 is sent, reach the effect identical with first embodiment; Do a summary about ray structure 302 at this among the figure, it is not form light guiding surface 322,324, repeatedly be equipped with n type semiconductor layer 304 in regular turn on 326 the leaded light mirror body 320 (being a transparency carrier), active layers 306, p type semiconductor layer 308, reflector 310, and two electrodes 312 that are electrically connected to n type semiconductor layer 304 and p type semiconductor layer 308 respectively, 314, only need during use at two electrodes 312, apply electric current on 314, active layers 306 promptly can emit beam 340, and the annular one ridge 322,324 of the leaded light mirror body 320 of this embodiment is just to form in etching (Etching) mode after above-mentioned ray structure 302 is finished with astigmatism zone 326 (light guiding surfaces).
At last, please refer to Fig. 9, it is a third embodiment of the present invention schematic diagram, the structure of itself and second embodiment is roughly the same, and difference between the two is the annular ridge 322a of the 3rd embodiment, and 324a is a convex curved surface, and be the matsurface of Fresnel (Fresnel), and astigmatic regional 326a is an inner sunken face and is the matsurface of a Fresnel (Fresnel), like this, also can reach purpose of the present invention and effect.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (17)
1. the light-emitting diode chip for backlight unit with microscope body structure is promptly launched light after being applied in an electric current, it is characterized in that, this light-emitting diode chip for backlight unit with micro mirror body comprises:
One ray structure, this ray structure comprises at least one n type semiconductor layer, an active layers and at least one p type semiconductor layer, this n type semiconductor layer and this p type semiconductor layer are after being applied in this electric current, this active layers produces this light and penetrates from an exiting surface, total reflection takes place in the light that active layers produces when touching non-exiting surface, till light penetrated from exiting surface, this exiting surface had a central optical axis, and this central optical axis is the center of whole this exiting surface; And
One leaded light mirror body, have one and repeatedly put a face and a light guiding surface, this is repeatedly put face and is mutual two corresponding faces with this light guiding surface, this leaded light mirror body is repeatedly put the face level with this and is repeatedly placed this exiting surface, it is the annular ridge at center with this central optical axis that this light guiding surface has one, to form an annular optically focused zone, this light guiding surface from this annular ridge towards this central optical axis direction indent, to form an astigmatism zone, this light is injected this annular optically focused zone and this astigmatism zone from this exiting surface, and this light forms an area source from this light guiding surface emission back.
2. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this light is a visible light.
3. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this light is a ultraviolet light.
4. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this light is an infrared light.
5. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this micro mirror body is a light transmissive material.
6. the light-emitting diode chip for backlight unit with microscope body structure according to claim 5 is characterized in that, this light transmissive material is an optical glass.
7. the light-emitting diode chip for backlight unit with microscope body structure according to claim 5 is characterized in that, this light transmissive material be in the group that constituted of three or five family's semi-conducting materials, two or six family semi-conducting material and organic semiconducting materials one of at least.
8. the light-emitting diode chip for backlight unit with microscope body structure according to claim 5 is characterized in that, this light transmissive material is an organic compound.
9. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this annular optically focused zone will be through the deflection of light in this annular optically focused zone and penetrate towards the direction of this central optical axis.
10. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this astigmatism zone will be penetrated towards the direction away from this central optical axis through the deflection of light in this astigmatism zone.
11. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, it is the lighting angle at center with this central optical axis that this ray structure has one, and this annular ridge is positioned at the inboard of this lighting angle.
12. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this annular ridge is a convex curved surface.
13. the light-emitting diode chip for backlight unit with microscope body structure according to claim 12 is characterized in that, this convex curved surface is the matsurface of a Fresnel.
14. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this astigmatism zone is an inner sunken face.
15. the light-emitting diode chip for backlight unit with microscope body structure according to claim 14 is characterized in that, this inner sunken face is the matsurface of a Fresnel.
16. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this astigmatism zone is a continuous curve surface with this optically focused zone.
17. the light-emitting diode chip for backlight unit with microscope body structure according to claim 1 is characterized in that, this luminescence chip is a flip-chip formula luminescence chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100036075A CN101226974B (en) | 2007-01-18 | 2007-01-18 | Light emitting diode chip with microscope body structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100036075A CN101226974B (en) | 2007-01-18 | 2007-01-18 | Light emitting diode chip with microscope body structure |
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| CN101226974A CN101226974A (en) | 2008-07-23 |
| CN101226974B true CN101226974B (en) | 2011-01-05 |
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| CN2007100036075A Active CN101226974B (en) | 2007-01-18 | 2007-01-18 | Light emitting diode chip with microscope body structure |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104154463A (en) * | 2010-09-27 | 2014-11-19 | 北京京东方光电科技有限公司 | Light emitting diode source and manufacturing method thereof and backlight source with light emitting diode source |
| CN102468394A (en) * | 2010-11-12 | 2012-05-23 | 佛山市奇明光电有限公司 | Light-emitting diode element and manufacturing method thereof |
| CN103383102A (en) * | 2013-08-07 | 2013-11-06 | 安徽三安光电有限公司 | Light-emitting device and control method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6679621B2 (en) * | 2002-06-24 | 2004-01-20 | Lumileds Lighting U.S., Llc | Side emitting LED and lens |
| US6987613B2 (en) * | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
| US7023022B2 (en) * | 2000-11-16 | 2006-04-04 | Emcore Corporation | Microelectronic package having improved light extraction |
| CN1808728A (en) * | 2005-01-20 | 2006-07-26 | 财团法人工业技术研究院 | Mirror and homogeneously luminous LED utilizing the mirror |
-
2007
- 2007-01-18 CN CN2007100036075A patent/CN101226974B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7023022B2 (en) * | 2000-11-16 | 2006-04-04 | Emcore Corporation | Microelectronic package having improved light extraction |
| US6987613B2 (en) * | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
| US6679621B2 (en) * | 2002-06-24 | 2004-01-20 | Lumileds Lighting U.S., Llc | Side emitting LED and lens |
| CN1808728A (en) * | 2005-01-20 | 2006-07-26 | 财团法人工业技术研究院 | Mirror and homogeneously luminous LED utilizing the mirror |
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| CN101226974A (en) | 2008-07-23 |
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