CN101228640B - 白光发光二极管的制造系统与方法 - Google Patents

白光发光二极管的制造系统与方法 Download PDF

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CN101228640B
CN101228640B CN2006800021251A CN200680002125A CN101228640B CN 101228640 B CN101228640 B CN 101228640B CN 2006800021251 A CN2006800021251 A CN 2006800021251A CN 200680002125 A CN200680002125 A CN 200680002125A CN 101228640 B CN101228640 B CN 101228640B
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段忠
陈长安
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SemiLEDs Corp
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Abstract

一种垂直型发光二极管(LED)包含：金属基板；连接于该金属基板的p型电极；连接于该p型电极的p型接点(面)，该p型接点(面)包含反光器；连接于该p型电极的p型GaN部分；连接于该p型GaN部分的活性区域；连接于该活性区域的n型GaN部分，该n型GaN部分具有一光滑及平坦的表面；以及涂布于该n型GaN的该光滑及平坦的表面上的荧光体层。

Description

白光发光二极管的制造系统与方法
技术领域
本发明涉及发光二极管(LED)及其制造方法。
背景技术
发光二极管(light emitting diode，LED)技术的进步已使得LEDs具有体积小、重量轻、效率高和寿命长等特性。这些LEDs在各式单色光输出(例如红光、蓝光和绿光)已可见相当大的进步，单色LED能作为一种特殊显示器的背光，例如手机和液晶显示器(LCDs)。
最近，已多方尝试利用LED来制造白光光源。因为LEDs具有偏好的放射光谱来产生单色光，故制造白光光源必须将红(R)、绿(G)、蓝(B)三种发光组件相互紧密地排列在一起，同时传播并混合由其所发出的光波。当以此排列来产生白光时，因为发光组件的色调、亮度和其它因素上的变化，故存在着如下问题，亦即无法产生出符合要求色调的白光；并且，当发光组件由不同材料构成时，驱动所需的电能也随发光二极管而有所不同，故须对不同发光组件施以不同电压，这样会导致复杂的驱动电路。再者，因为该发光组件为半导体发光组件，色调易因温度特性的差异、时序改变及操作环境而产生变化；或是因无法均匀地混合由发光组件所产生的光波而造成色彩不均匀。虽然目前为止尚未存在能够利用发光组件而发出白光的良好光源，但是发光二极管仍为用以产生单独色彩的有效发光装置。
美国专利5998925号公开了一种具有发光组件及荧光体(phosphor)的白光发光二极管，该发光组件利用半导体作为发光层，该荧光体吸收部分发光组件所发射出的光波，并发出波长不同于所吸收光的光波，其中，该发光组件的发光层为氮化物化合物半导体，而该荧光体包含由铈(cerium)活化的石榴石(garnet)荧光材料，其中该石榴石荧光材料含有选自包含钇(Y)、镏(Lu)、钪(Sc)、镧(La)、钆(Gd)及钐(Sm)的族群的至少一种元素、以及选自包含铝(Al)、镓(Ga)及铟(In)的族群的至少一种元素，且即使以高亮度使用一段时间后，其发光特性仍较不易衰退。
图1显示如同公开于美国专利5998925的引线型LED，该发光二极管为具有安装引线(mount lead)2及内部引线(inner lead)4的引线型发光二极管，其中，发光组件8装设于该安装导线2的杯状物(cup)6上，且该杯状物6填满涂布树脂14且以树脂来铸造，该涂布树脂14包含特定荧光体，以覆盖该发光组件8。该发光组件8的n型电极与p型电极通过配线12分别连接于安装引线2及内部引线4。在如上述所构成的发光二极管中，部分由发光组件(LED晶粒)8所发出的光线(之后称为LED光)激发了包含于涂布树脂14中的荧光体而产生与LED光不同波长的荧光，使得由荧光体所发出的荧光以及未能激发荧光体所输出的LED光互相混合而输出，因此，该发光二极管也输出波长不同于由发光组件8所发出的LED光的光波。
图2显示如同公开于美国专利5998925的晶粒实施例，该晶粒型LED装设于填满涂布材料的外框22的壁凹处，该涂布材料包含特殊荧光体，以形成涂层28。该发光组件26使用环氧树脂(epoxy resin)或是包含例如银的类似物来固定，且该发光组件26的n型电极与p型电极连接于借助导线24而装设在外框22上的金属端子20。在如上述构成的晶粒型发光二极管中，类似于图1的引线型发光二极管，由荧光体所发出的荧光以及未被荧光体吸收所传送的LED光互相混合而加以输出，因此，该发光二极管也将输出波长不同于由发光组件26所发出的LED光的光波。
美国专利6642652公开了一种包含发光装置的光源，例如覆盖着发光材料结构(例如单层或多层荧光体)的第3族氮化物发光二极管。在该发光材料结构的厚度上的任何变化小于或等于该发光材料结构的平均厚度的10％。在一些实施例中，该发光材料结构的厚度小于该发光装置的横截面尺寸的10％；在一些实施例中，该发光材料结构是发光装置所发出的光波通过其中的唯一发光材料；在又另一些实施例中，该发光材料结构的厚度介于约15与约100微米间。该发光材料结构通过例如模版印刷(stenciling)或电泳沉积(electrophoretic deposition)来选择性沉积于该发光装置上。
图3说明了根据美国专利6642652的以荧光体涂布的LED。图3中的LED包含：n型区域44，形成于基板42上，例如蓝宝石、碳化硅(SiC)或是第三族氮化物材料；活性区域46，形成于该n型区域44上；及p型区域36，形成于该活性区域46上。n型区域44、活性区域46及p型区域36一般为多层结构，n型区域44、活性区域46及p型区域36会被蚀刻掉一部份而使n型区域44的一部分外露。p型接点(面)34沉积于p型区域36上，且n型接点38沉积于n型区域44的该外露部分上。接着将该LED翻转过来并以材料32(例如焊锡)固定于下底座(sub-mount)30。
美国专利6744196公开了包含LED晶粒及染色薄膜层的薄膜LED装置，其中该LED晶粒在第一波长下发光，而该染色薄膜层可改变所发出光的颜色。例如，蓝光发光二极管晶粒能用来产生白光。该染色薄膜层包含利用化学气相沉积工艺加以沉积的有帮助的ZnSe、CeO2、Al2O3或Y2O3Ce，该化学气相沉积工艺例如有机金属化学气相沉积(metal organicchemical vapor deposition，MOCVD)、原子层化学气相沉积(atomic layerchemical vapor deposition，ALD)、等离子增强型原子层化学气相沉积(plasmaenhanced ALD)及/或光增强型化学气相沉积(photo enhanced CVD)。如图4所示，n型接点50位于反射层52下方，染色层(荧光体层)53位于该反射层52上方；接着，形成第一钝化层54以及形成p型半透明接点(面)56。第二钝化层58形成于该第一钝化层54及接点(面)56上方。导线60连接于位于p型引线64上方的p型焊垫62。
发明内容
垂直型发光二极管(LED)包含：金属基板；连接于该金属基板的p型电极；连接于该p型电极的p型GaN部分，该p型接点包含反光器；连接于该p型GaN部分的活性区域；连接于该活性区域的n型GaN部分，该n型GaN部分具有一光滑及平坦的表面；以及涂布于该n型GaN的该光滑及平坦的表面上的荧光体层。
完成上述LED可包含下列一或多个步骤：将具有镜面层的金属基板形成于该p型GaN部分的顶部上；使用激光剥除(LLO)、选择性地湿式蚀刻或化学机械研磨来移除该蓝宝石基板；该p型接点(面)也可为一反光器；该荧光体层能以荧光体粉末或浆糊加以旋转涂布或网版印刷；该荧光体层96以掩膜材料101(例如光阻)加以图案化并且以含氟等离子体进行干式蚀刻；接着利用各种不同技术(例如PVD、电子束蒸镀或CVD)来施加金属层99例如Ni/Cr(Cr及Ni)以与n型GaN形成接触；在移除该光阻101及剥除金属层99的不必要区域而形成焊垫98后，使该金属焊垫98与n型GaN形成接触，这称为光阻剥除技术(lift-off techniques)。该荧光体层及该焊垫覆盖该外露n型GaN的表面80。
本发明可能包含下列其中之一或多个优点。上述具有外露n型GaN层80的LED晶圆表面为用于后续制程的实质上平滑及平坦的表面；与已知一次一LED晶粒的方法相比，该方法通过在晶圆层级将蓝光LEDs上的该荧光体层直接地涂布于外露n型GaN表面的顶部上而降低制造白光LED的成本；该方法减少每一晶粒所需要的荧光体量；该LEDs不需要晶圆接合/胶合程序，并且该复杂、冗长及一次一个的晶圆接合/胶合以较不复杂的沉积程序取代，例如物理气相沉积(physical vapor deposition，PVD)、化学气相沉积(chemical vapordeposition，CVD)、等离子增强化学气相沉积(plasma enhancedchemical vapor deposition，PECVD)、蒸镀(evaporation)、离子束沉积(ion beam deposition)、电化学沉积(electro chemical deposition)、无电式化学沉积(electroless chemical deposition)、等离子喷涂(plasmaspray)、喷墨式沉积(ink jet deposition)。因为n型GaN的导电性好，故n型电极不需要半透明接点，如此该LED装置能发射出更多的光输出；再者，因为于该装置的每一侧上仅需一电极，故LED电极阻挡较少光波；此外，电流能一致地从n型电极散布至p型电极，因此增加了LED的性能；此外，金属基板比蓝宝石基板能散布更多热量，因此可有更多的电流用来驱动该LED；所产生的LED能以较小的尺寸取代常规LED；对于相同尺寸的LED而言，在相同驱动电流下，垂直式LED的光输出量远高于常规LED。
附图说明
为了更加了解本发明其它特色、技术概念及目的，可清楚地阅读下列实施例及所附附图的说明：
图1至图4显示各种现有技术LEDs；
图5显示根据本发明一实施例的垂直型LED的第一实施例；
图6显示图5的LED，且其上具有荧光体涂层；
图7显示具有光阻掩膜层的图案化荧光体涂层；
图8显示沉积于图7的图案化荧光体涂层上的金属接触层；
图9显示图案化金属焊垫及覆盖该LED晶圆的荧光体涂层；
图10显示多个荧光体涂布的LEDs。
【主要组件符号说明】
2～安装引线
4～内部引线
6～杯状物
8～发光组件
12～配线
14～涂布树脂
20～金属端子
22～外框
24～导线
26～发光组件
28～荧光体涂层
30～下底座
32～焊锡
34～p型接点(面)
36～p型区域
38～n型接点
42～基板
44～n型区域
46～活性区域
50～n型接点
52～反射层
53～染色层
54～第一钝化层
56～p型半透明接点(面)
58～第二钝化层
60～导线
62～p型焊垫
64～p型引线
70～金属基板
72～p型电极
74～p型接点(面)
76～p型GaN部分
78～活性区域
80～n型GaN的外露表面
81～钝化层
82～n型GaN部分
90～荧光体层
96～图案化荧光体层
98～焊垫
99～接触金属层
101～光阻掩膜层
具体实施方式
接着，将参考附图来说明本发明的实施例。在阅读详细说明时，可同时参考附图，且该图示也视作该详细说明的一部份。
图5显示出垂直型LED晶圆的一个实施例的示范性结构。每一LED包含从激光剥除程序(laser lift-off)形成的金属基板70，p型电极72位于该金属基板70上方；接着，将反光器、p型接点(面)74及P型GaN部分76设置于该p型电极72上方；形成活性区域78(包含多量子阱)，且将n型GaN部分82形成于该活性区域78上方；该n型GaN具有外露表面80。
LED通过下列步骤而形成：沉积多层磊晶结构于承载基板例如蓝宝石上；沉积至少一金属层于该多层磊晶结构上；以及移除该承载基板以留下该金属基板70。该金属层可使用电化学沉积、无电化学沉积、化学气相沉积(chemical vapor deposition，CVD)、有机金属化学气相沉积(metal organicchemical vapor deposition，MOCVD)、等离子增强化学气相沉积(plasmaenhanced chemical vapor deposition，PECVD)、原子层化学气相沉积(atomiclayer chemical vapor deposition，ALD)、物理气相沉积(physical vapordeposition，PVD)、蒸镀(evaporation)、等离子喷涂(plasma spray)或上述技术的组合加以沉积。该金属层可以为单层或多层。在一实施例中，以Ag/Pt、Ag/Pd或Ag/Cr作为镜面层，以Ni作为阻障层(barrier)，而以金作为种晶层，以上整个作为铜电镀的主体基板。沉积该镜面层(例如Ag、Al、Pt、Ti、Cr)，接着在电化学沉积或无电化学沉积金属(例如Ni或Gu)之前，将阻障层(例如含氧的氮化钛(TiN)、氮化钽(TaN)、氮化钨钛(TiWN)、钨化钛(TiW))形成于该镜面层上。对于铜的电化学沉积而言，则使用CVD、MOCVD、PVD、ALD或蒸镀程序来沉积一种晶层，其中铜的一些种晶材料为W、Au、Cu、Ni等。该金属层能够具有相同或是不同的组成，且使用各式的沉积技术来沉积。可通过使用激光、蚀刻、研磨/抛蚀(grinding/lapping)、化学机械研磨(chemical mechanical polishing)、湿式蚀刻等以移除该承载基板。
该蓝宝石基板能使用激光剥除(LLO)技术予以移除。该多层磊晶结构具有：反射金属层，连接于金属电镀层；钝化层81，钝化该LED晶粒的侧壁，连接于该反射金属层74、p型电极72、p型GaN层76、多量子阱78及n型GaN层82；p型GaN层，连接于该钝化层；n型GaN层，连接于该多量子阱78；n型电极连接于该n型GaN层，而该金属电镀层为p型电极或是具有连接于金属电镀层的p型电极。
图6显示出位于垂直型LED上的荧光体涂层90。因为该LED晶圆实质上光滑及平坦，故该晶圆层级的荧光体涂层均匀且平行于该发光LED表面80。因为从活性层发出的蓝光在穿越荧光体层时行进相同距离或光径，故无彩色环(colorful rings)存在于LED的场图型(field pattern)上。此外，该LED厚度(GaN层总厚度约为2至8微米)远小于该发射表面82(大于50微米)，光主要由顶部表面发出，且有一些光来自于侧壁，以便将因荧光体层90的厚度不均匀所引起的问题降至最低。
该荧光体层90可使用旋转涂布机来形成。该荧光体层90能够通过旋转涂布机以500与30000rpm间的转速来涂布，以控制n面在上垂直型LED晶圆上的层厚度。除了旋转涂布法之外，其它方法例如网版印刷(screenprinting)、滚轮法(roller method)或浸润法(dipping method)也能被使用。尤其，为了获得预先确定的相等薄膜厚度，使用旋转涂布法较佳。在将该荧光体涂布于该基板上后，干燥该涂层薄膜。干燥的方法并不受限制，只要该薄膜的水分能够蒸发。因此，各种使用加热器或干燥空气或表面处理的方法均可使用，例如白炽热灯；或者，该涂层薄膜可通过放置于室温环境中一段时间来进行干燥。
为了制造该荧光体涂层，需准备荧光体粉末组成。为了此目的，须将例如分散剂(dispersing agent)分散于纯水中，而以均质搅拌器(homomixer)搅拌该分散液且将其置于分散剂已分散于其中的纯水中，并且搅拌该混合物。在该荧光体粉末组成物中，水作为分散媒介。该荧光体粉末组成可包含作为分散剂或保留剂(retaining agent)的酒精，而重铬酸铵(ammoniumbi-chromate)可作为感旋光性高分子。该荧光体粉末在其制造过程中可加以表面处理，以改善其分散性质及附着性。该荧光体涂布材料由混合于有机化学品(例如酒精、气溶胶(aerosol)、接结材料(binder material)或环氧树脂(epoxy resin))中的该荧光体元素所构成，以调整该涂布材料的粘度。可通过材料粘度与旋转速度可再现地调整厚度，以改变所产生的白光LEDs的国际照明委员会色度坐标(CIE coordination)。接着，施加光阻层101并以接触图案使其曝光，接着蚀刻该荧光体层90，该蚀刻可包含干式蚀刻法。
图7显示出具有光阻掩膜层的图案化荧光体层。图案化荧光体层96生成于外露n型GaN表面80上，该图案化荧光体层96能以干式蚀刻工艺加以图案化。在干式蚀刻工艺中，光阻掩膜置于该荧光体薄膜上方并且于电场中使该薄膜暴露于腐蚀性气体。该掩膜可包含与荧光体片段尺寸相当的光阻条带(photoresistive strips)。该蚀刻结果为多个接触开口的开口，用于稍后沉积接触金属层99，例如Ni/Cr(Ni系与n型GaN相接触)。
图8中，接触金属层99例如Ni/Cr(Ni与n型GaN相接触)沉积于该光阻掩膜层的顶部，并连接于荧光体层96且接触n型GaN 80。金属层99可使用CVD、PVD或电子束蒸镀(e-beam evaporation)来沉积。
图8中，焊垫98形成于该图案化荧光体层96上方而形成n型焊垫。该焊垫98使用水溶液(例如稀释的氢氧化钾)而于移除该光阻掩膜层101期间以剥除技术来形成。荧光体涂布与焊垫的工艺可互相交换：即在涂布及于使用水溶液(例如稀释之氢氧化钾)移除保护该焊垫98的光阻掩膜层101期间施加该荧光体层96及通过剥除技术进行图案化之前，首先通过光阻掩膜层将该n型GaN接触金属99加以图案化、干式蚀刻并加以保护。
图10显示多个白光LED晶粒。将该荧光体涂布的LED晶圆切割成白光LED晶粒，该晶粒可直接进行封装而不需要在晶粒层级添加荧光体。将该荧光体涂层整合至该晶圆层级制程的n侧在上垂直型LED中，接着以激光或锯刀将该白光晶圆切刻成分离的白光LED晶粒。
虽然上述描述了单一荧光体层，但也可使用多层荧光体层。例如，可将红色感旋光性荧光体粉末组成(荧光体浆)施加于全部表面上，曝光并显影；接着，将绿色感旋光性荧光体粉末组成(荧光体浆)施加于全部表面上，曝光并显影；再接着，将蓝色感旋光性荧光体粉末组成(荧光体浆)施加于全部表面上，曝光并显影。
虽然本发明已通过举例及优选实施例作出了描述，然而应该了解本发明并不限制于此；相反地，本发明欲包含各种修改及类似的构造和制程。因此，所附权利要求的范围应给予最宽广的解释，包含所有如此的修改及类似的构造和制程。

Claims (18)

1.一种垂直型发光二极管，包含：
金属基板；
p型电极，连接于该金属基板；
p型接点，连接于该p型电极，该p型接点包含反光器；
p型GaN部分，连接于该p型电极；
活性区域，连接于该p型GaN部分；
n型GaN部分，连接于该活性区域，该n型GaN部分具有一光滑及平坦的表面；以及
荧光体层，涂布于该n型GaN部分的该光滑及平坦的表面上。
2.如权利要求1所述的垂直型发光二极管，其中，该金属基板使用下列方法之一来沉积：电化学电镀、无电化学镀、溅镀、化学气相沉积、电子束蒸镀、热喷涂法。
3.如权利要求1所述的垂直型发光二极管，其中，该金属基板为金属或包含铜、镍及铝其中之一的金属合金。
4.如权利要求1所述的垂直型发光二极管，其中，将该荧光体层旋转涂布。
5.如权利要求4所述的垂直型发光二极管，包含形成要被旋转涂布的荧光体粉末。
6.如权利要求4所述的垂直型发光二极管，其中，该荧光体层由荧光体颗粒与一种或多种有机化学物混合而成。
7.如权利要求1所述的垂直型发光二极管，其中，该荧光体层被图案化。
8.如权利要求1所述的垂直型发光二极管，其中，该荧光体层被干式蚀刻。
9.如权利要求1所述的垂直型发光二极管，包含金属焊垫，其连接于该荧光体层。
10.如权利要求1所述的垂直型发光二极管，其中，该荧光体层接触该LED的该n型GaN的表面。
11.一种n型GaN在上垂直型LED晶圆的制造方法，其中，该n型GaN在上的垂直型LED晶圆光滑且平坦，该方法包含：
设置承载基板；
在该承载基板上方沉积n型GaN部分；
在该n型GaN部分上方沉积活性层；
在该活性层上方沉积p型GaN部分；
沉积一个或多个金属层；
施加掩膜层；
蚀刻该金属层、p型GaN层、活性层及n型GaN层；
移除该掩膜层；
沉积钝化层；
移除该钝化层位于该p型GaN层顶部上的部分，以使该金属层暴露出来；
沉积一个或更多层；
沉积金属基板；
移除该承载基板，使该n型GaN层的表面外露；
于该n型GaN层的表面上施加荧光体层。
12.如权利要求11所述的n型GaN在上垂直型LED晶圆的制造方法，其中，在施加该荧光体层前，该n型GaN在上垂直型LED晶圆的表面粗糙度小于10000埃的表面。
13.如权利要求11所述的n型GaN在上垂直型LED晶圆的制造方法，其中，该承载基板为蓝宝石。
14.如权利要求11所述的n型GaN在上垂直型LED晶圆的制造方法，其中，该金属基板使用下列方法之一来沉积：电化学电镀、无电化学镀、溅镀、化学气相沉积、电子束蒸镀、热喷涂。
15.如权利要求11所述的n型GaN在上垂直型LED晶圆的制造方法，其中，该金属基板为金属或包含铜、镍及铝其中之一的金属合金。
16.如权利要求11所述的n型GaN在上垂直型LED晶圆的制造方法，其中，该承载基板以下列方法其中之一来移除：激光剥除、湿式蚀刻、化学机械研磨。
17.如权利要求11所述的n型GaN在上垂直型LED晶圆的制造方法，包含连接于该荧光体层的焊垫。
18.如权利要求11所述的n型GaN在上垂直型LED晶圆的制造方法，其中，于晶圆层级施加的该荧光体层连接于n侧在上垂直型LED的n型GaN的表面。
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