CN101234389B - Collector unit for semiconductor process - Google Patents
Collector unit for semiconductor process Download PDFInfo
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- CN101234389B CN101234389B CN2007101701259A CN200710170125A CN101234389B CN 101234389 B CN101234389 B CN 101234389B CN 2007101701259 A CN2007101701259 A CN 2007101701259A CN 200710170125 A CN200710170125 A CN 200710170125A CN 101234389 B CN101234389 B CN 101234389B
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- gas
- collector unit
- accessory substance
- housing
- container handling
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 13
- 230000008569 process Effects 0.000 title claims description 12
- 230000007246 mechanism Effects 0.000 claims abstract description 31
- 238000012545 processing Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims description 90
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000605 extraction Methods 0.000 claims description 16
- 230000033228 biological regulation Effects 0.000 claims description 11
- 238000011144 upstream manufacturing Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000000630 rising effect Effects 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract description 18
- 239000006227 byproduct Substances 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 113
- 239000010408 film Substances 0.000 description 65
- 235000012431 wafers Nutrition 0.000 description 24
- 238000005755 formation reaction Methods 0.000 description 17
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
- B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
- B01D45/08—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by impingement against baffle separators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
- B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
- B01D45/06—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by reversal of direction of flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S55/00—Gas separation
- Y10S55/15—Cold traps
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A collecting unit is disposed on an exhaust passage of a semiconductor processing apparatus to collect by-products contained in an exhaust gas. The collecting unit includes a trap body detachably disposed inside a casing and configured to collect a part of the by-products. The trap body includes fins arrayed in a flow direction of the exhaust gas and having a surface on which a part of the by-products is deposited and trapped. The collecting unit further includes a receiving mechanism disposed inside the casing and configured to receive a part of the by-products that peels off from the trap body or an inner surface of the casing to prevent this part from being deposited on a bottom of the casing. The receiving mechanism is configured to allow a part of the by-products held thereon to be in contact with a cleaning gas from above and from below.
Description
Technical field
The present invention relates to a kind ofly be processed the film formation device that collector unit that uses in the semiconductor processing device of substrate and the semiconductor processes of using this collector unit are used in process semiconductor wafers etc.At this; Semiconductor processes is meant; Through (Liquid Crystal Display: LCD) (Flat Panel Display: flat-panel monitor) glass substrate of usefulness etc. is processed that the figure with regulation forms semiconductor layer, insulating barrier, conductive layer etc. on the substrate, is used for being processed at this making the various processing that comprise the structure of semiconductor devices, the wiring that is connected with semiconductor devices, electrode etc. and implement on substrate for such FPD at wafer or LCD.
Background technology
In the manufacturing of the semiconductor devices that constitutes semiconductor integrated circuit,, for example semiconductor (for example silicon) wafer is implemented the various processing such as removal of film forming, etching, oxidation, diffusion, modification, annealing, natural oxide film to being processed substrate.As can be once to the multi-disc semiconductor wafer through CVD (Chemical Vapor Deposition: chemical vapour deposition (CVD)) implement the device that film forming is handled, vertical (so-called batch type) film formation device is arranged.
In this vertical film formation device, at first, semiconductor wafer transferred from wafer case be loaded on the vertical brilliant boat, and its multilayer ground is supported.In wafer case, can hold for example 25 wafers, in brilliant boat, can carry 30～150 wafers.Then, with brilliant boat pack into from the below of hot wall type container handling its inside and sealed container.Then, under the controlled states of various treatment conditions such as the flow of handling gas, processing pressure, treatment temperature, the film forming that puts rules into practice is handled.
The product that handle to be generated by film forming not only is deposited on the surface of semiconductor wafer, also as accessory substance membrane stack long-pending (adhering to) on the inner surface of for example container handling and nipper etc.Handle if proceed film forming under attached to the state in the container handling, then can the generation of quartz and accessory substance film partly peeled off because of constituting the different stress that produce of quartz of container handling with the thermal coefficient of expansion of accessory substance film at the accessory substance film.Thus, will produce particulate, and become the reason that makes the finished semiconductor device product rate that produces descend, perhaps make the parts deterioration of treating apparatus.
Therefore, after repeatedly carrying out the film forming processing, carry out the cleaning in the container handling.In the past, for example used hydrogen fluoride (HF) solution that container handling is carried out wet cleaning (wetcleaning) usually.In this case, remove the accessory substance film through wet etching.But, in wet cleaning, need unload container handling, the manual operation of cleaning, installing once more and adjust.In addition, owing to must stop film formation device for a long time, thereby produce a large amount of downtimes, reduce running rate.
Based on this viewpoint, recently, the dry clean that container handling is not decomposed in common use.In this dry clean, supplying clean gas in the container handling that is heated to set point of temperature by heater, the for example mist of fluorine and Halogen sour gas.Utilize clean air that the accessory substance film attached to inner surface of container handling etc. is carried out dry etching and with its removal.Have, the trend of such clean is not only to the film formation device of batch type again, and also is the same to the film formation device of the one chip of blocks of ground process semiconductor wafers.
For example, open in the 2004-343095 communique, disclose the technology that this clean relates in japanese patent laid-open 3-31479 communique, japanese patent laid-open 4-155827 communique, japanese patent laid-open 6-151396 communique and Japanese Patent Laid.
For above-mentioned this film formation device, the exhaust gas of discharging, contain the accessory substance that produces because of film forming from container handling.Therefore, in order from exhaust gas, to collect and remove accessory substance, with gas extraction system that container handling is connected in be equipped with the collector unit of removal accessory substance.
Figure 11 is that for example TEOS (Tetraethyl Orthosilicate: tetraethyl orthosilicate) pile up SiO as film forming gas is used in expression
2The sectional view of an example of the existing collector unit that is adopted during film.As shown in the figure, collector unit 2 mainly by housing 4 cylindraceous be provided in its inner gatherer (trap) body 6 and constitute.End at housing 4 is formed with gas access 4A, is equipped with the lid 10 that can load and unload by means of bolt 8 at the other end.Central portion at this lid is formed with gas vent 4B.
The structure of gatherer body 6 is by means of support bar 14, with the interval connection of regulation, the metal fin (fin) 12 of a plurality of circular ring-types of support, to swim side above that and be equipped with hemispheric lid 16.In addition, the downstream of gatherer body 6 is installed on the lid 10 and is supported.
In said structure, the exhaust gas of when film forming, discharging from the container handling side enters in the housing 4 of collector unit 2 from gas population 4A.This exhaust gas contacts with the surface of each fin 12, and simultaneously, the central part of the fin 12 through this ring-type is discharged from gas vent 4B.At this moment, the accessory substance that contains in this exhaust gas will be collected attached to the surface of each fin 12, from exhaust gas, is removed.
In this case, though accessory substance mainly collected by each fin 12, also can be Anywhere attached to this exhaust gas contact portion.Therefore, also can adhere to accessory substance to a certain degree on the surface of lid 16 and the internal face of housing 4 etc., and it is removed from exhaust gas.
Flow through the ClF in the container handling when as stated, being utilized in cleaning
3Clean airs such as gas and HF gas come along the accessory substance of collecting and the accessory substance in the container handling and remove.Can prevent thus to stop up in the collector unit 2.
Summary of the invention
The purpose of invention be to provide a kind of can the short time and remove the film formation device that the collector unit that the semiconductor processes of the accessory substance of collecting uses and the semiconductor processes of using this collector unit are used effectively.
The 1st viewpoint of the present invention does; A kind of collector unit is provided; This collector unit is provided in the exhaust channel of semiconductor processing device, is used for collecting flowing through the accessory substance that its inner discharge gas contains, and comprising: housing; It has gas access and gas vent, and sets with the mode of the part that forms above-mentioned exhaust channel; The gatherer body; Be provided in the above-mentioned housing with the mode that can load and unload; Be used for collecting the part of the above-mentioned accessory substance of above-mentioned discharge gas; Above-mentioned gatherer body possesses a plurality of fins of arranging along above-mentioned discharge gas flow direction, and each fin has the surface of collecting through the part of adhering to above-mentioned accessory substance; Accept mechanism; Be provided in the above-mentioned housing; The part of the above-mentioned accessory substance that acceptance is peeled off from the inner surface of above-mentioned gatherer body or above-mentioned housing; Make its bottom that can not be deposited in above-mentioned housing, the above-mentioned part of accepting mechanism's allow retention above-mentioned accessory substance above that contacts with clean air from the above and below.
The 2nd viewpoint of the present invention does; The film formation device that provides a kind of semiconductor processes to use; Comprise: hold the container handling that is processed substrate, in above-mentioned container handling, support heater that above-mentioned in the above-mentioned supporting member that is processed substrate, the above-mentioned container handling of heating be processed substrate, discharge the gas extraction system of the gas in the above-mentioned container handling, in above-mentioned container handling, supply with the film forming gas feed system of film forming gas and the clean air system of supplying clean gas in above-mentioned container handling; Above-mentioned gas extraction system comprises to be provided in and is used for collecting the collector unit that flows through the accessory substance that its inner discharge gas contains in the exhaust channel; Above-mentioned collector unit comprises: housing; It has gas access and gas vent, and sets with the mode of the part that forms above-mentioned exhaust channel; The gatherer body; Be provided in the above-mentioned housing with the mode that can load and unload; Be used for collecting the part of the above-mentioned accessory substance of above-mentioned discharge gas; Above-mentioned gatherer body possesses a plurality of fins of arranging along above-mentioned discharge gas flow direction, and each fin has the surface of collecting through the part of adhering to above-mentioned accessory substance; Accept mechanism; Be provided in the above-mentioned housing; The part of the above-mentioned accessory substance that acceptance is peeled off from the inner surface of above-mentioned gatherer body or above-mentioned housing; Make its bottom that can not be deposited in above-mentioned housing, the above-mentioned part of accepting mechanism's allow retention above-mentioned accessory substance above that contacts with clean air from the above and below.
Description of drawings
Fig. 1 is the sectional view of the film formation device (vertical CVD device) that relates to of expression embodiment of the present invention.
Fig. 2 is the sectional view of the collector unit of expression device shown in Figure 1.
Fig. 3 is the exploded of expression collector unit shown in Figure 2.
Fig. 4 is the sectional view of the gatherer body of the expression part that constitutes collector unit shown in Figure 2.
Fig. 5 A, B are the sectional views along the direction of arrow of VA-VA line among Fig. 2 and VB-VB line.
Fig. 6 A-C is that accessory substance remains in the sectional view of the state when respectively accepting on the member in the section of expression difference corresponding diagram 5A, B and Fig. 2.
Fig. 7 is the sectional view of the collector unit that relates to of expression the 1st variant.
Fig. 8 is the sectional view of the collector unit that relates to of expression the 2nd variant.
Fig. 9 is the sectional view of the collector unit that relates to of expression the 3rd variant.
Figure 10 is illustrated in the sectional view that the state of accepting member is set in the exhaust channel.
Figure 11 representes for example to use TEOS to pile up SiO as film forming gas
2The sectional view of an example of the existing collector unit that is adopted during film.
The specific embodiment
Inventors of the present invention etc. study to the problem points that collector unit produced that relates to like above-mentioned gas extraction system shown in Figure 11 in R&D process of the present invention.As a result, inventor of the present invention waits the opinion that has obtained the following stated.
As stated, in clean processing vessel, cleaned simultaneously in the collector unit 2.In order to remove the accessory substance attached to the surface of each fin 12 etc., the circulation for example clean air about 3 hours gets final product.
But, when this clean proceeds to a certain degree, will reduce attached to the adhesion strength of the accessory substance on each fin 12 of collector unit 2, the surface of lid 16 and the internal face of housing 4 etc., and have the situation of peeling off therefrom, falling.The horizontal state that collector unit 2 is set of expression in Figure 11, the accessory substance M1 that falls is deposited in the bottom (bottom among Figure 11) of housing 4 thickly.
When piling up accessory substance M1 so thickly, the area that accessory substance M1 contacts with clean air is compared with its accumulating amount, just becomes considerably less.In order to remove accessory substance M1 fully, just need long-time, for example, even according to the amount that falls and different, yet need be through the clean air that circulates constantly more than 10 hours.Therefore, it is too very long that cleaning time will become, and reduces the running rate of device.
Also can the bolt 8 of the lid 10 that housing 4 is installed be loosened, in housing 4, take out gatherer body 6, clean with cleaning fluid.In this case, will make the scale of operation become excessive, safeguard the very difficulty that becomes, and cleaning time becomes long, thereby reduce the running rate of device.
Below, with reference to accompanying drawing, to describing based on the embodiment of the present invention that these opinions constituted.In following explanation, give identical symbol for inscape with roughly the same function and structure, only in needs, carry out repeat specification.
Fig. 1 is the sectional view of the film formation device (vertical CVD device) that relates to of expression embodiment of the present invention.This film formation device 22 has the vertical container handling 28 of the two-layer pipe of the quartz system that is made up of inner core 24 and urceolus 26.In inner core 24, accommodate the quartzy combinations boat 30 that is used to keep being processed substrate.In brilliant boat 30, maintain as the semiconductor wafer W that is processed substrate by the interval multilayer of stipulating.This interval both can be fixed, also can be according to wafer position and difference.
In the lower ending opening portion of container handling 28, be connected with the cylinder-shaped manifold 32 of for example stainless steel across containment members 34 such as O shape circles.In the lower ending opening portion of manifold 32, dispose the lid 38 that is used to open and seal this peristome across containment members 36 such as O shape circles.On lid 38, be equipped with the rotating shaft 42 that connects through magnetic fluid seal spare 40.In the upper end of rotating shaft 42, be equipped with turntable 44, on platform 44, dispose the heat-preservation cylinder 46 of quartzy system, on heat-preservation cylinder 46, be carried with brilliant boat 30.Rotating shaft 42 is installed on the arm 48A of the boat elevator (boat elevator) 48 that can go up and down, and lid 38 can integrally go up and down with brilliant boat 30 grades.Brilliant boat 30 can plug from its below in container handling 28.Moreover, also can not rotate brilliant boat 30, be fixing state.In addition, also exist the part of manifold 32 and container handling whole with quartzy situation about forming.
In manifold 32, be equipped with the gas supply structure 50 of in container handling 28, supplying with regulation gas.Particularly, gas supply structure 50 has a plurality of of perforation menifold 32, and 3 nozzle 50A of illustration, 50B, 50C among the figure can supply with all gases through flow-control as required from each nozzle 50A～50C.At this, can supply with respectively and for example be used to carry out SiO
2The TEOS gas of the forming thin film of film, the HF gas that uses as clean air, the N that uses as carrier gas and purge gas etc.
2Gas.In addition, be not limited to the above-mentioned gas kind, can use all gases according to the film kind of piling up.
By each gas that each nozzle 50A, 50B, 50C supply with, the processing space in inner core 24 is that the processing region of wafer rises, and turns back downwards at the top.In the gap of inner core 24 and urceolus 26, flow down then, the exhaust outlet 52 on the side walls that is arranged on urceolus 26 is discharged.
In addition, in the periphery of container handling 28, be equipped with heat insulation layer 54 cylindraceous.Side is equipped with heater 56 within it, will be positioned at the temperature that inboard wafer W is heated to regulation.
In the exhaust outlet 52 on the side walls that is arranged on container handling 28, be equipped with the gas extraction system 60 that is used for vacuumizing in the container handling 28.Particularly, gas extraction system 60 is connected with exhaust outlet 52, has the exhaust channel of for example being processed by stainless steel 62 that flows through exhaust gas.In the way of exhaust channel 62, be equipped with the collector unit 64 of the accessory substance that contains in the exhaust gas of collecting flow therein.In addition, in the way of exhaust channel 62, be equipped with vavuum pump 66 to vacuumizing in the container handling 28.
The integral body of gas extraction system 60 is covered by the heating pipe box that can load and unload 68.Thus, prevent that the accessory substance in the exhaust gas from adhering to when the film forming of film because of heating integral body.In addition, when cleaning, promote the reaction of accessory substance and clean air.In addition, the water evaporates that reaction is produced prevents the corrosion of structural materials such as pipe arrangement.
Fig. 2 is the sectional view of the collector unit of expression device shown in Figure 1.Fig. 3 is the exploded of expression collector unit shown in Figure 2.Fig. 4 is the sectional view of the gatherer body of the expression part that constitutes collector unit shown in Figure 2.Fig. 5 A, B are the sectional views along the direction of arrow of VA-VA line among Fig. 2 and VB-VB line.Collector unit 64 has to form container-like housing 74 and be provided in being used in the housing 74 with the mode that can load and unload collects the gatherer body 76 of the accessory substance of exhaust gas.
At the upstream side of support bar 88, the lid 90 of semicircle shape for example or curved surface shape (domed) is installed.Thus, flow through the center stream that the exhaust gas that comes just can not flow directly into each ring-type fin 86 by upstream side.The downstream of each support bar 88 is connected fixing with the lid 80 of housing 74.Therefore, as shown in Figure 3, to loosen through the fixing bolt 81 of lid 80, gatherer body 76 just can integrally load and unload with lid 80 with respect to enclosure body 78.
In gatherer body 76, be equipped with to connect the shaft-like gatherer heater 92 (with reference to Fig. 2 and Fig. 3) of each fin 86 with support bar 88 parallel modes.Gatherer heater 92 is made up of shaft-like a plurality of cartridge heater 92A, shown in Fig. 5 A, at this, along the circumferencial direction of fin 86 uniformly-spaced to be equipped with 3.The not shown thermocouple that goes out that is equipped with in each cartridge heater 92A that temperature survey uses.Thus, the gatherer body 76 that just can when cleaning, will comprise each fin 86 on one side is controlled under the temperature of regulation, Yi Bian heat.In addition, a cartridge heater only is shown in Fig. 2 and Fig. 3.
In collector unit 64, what be equipped with when being used for accepting to circulate clean air the accessory substance that falls on the way that falls accepts mechanism 96.Under situation shown in Figure 2, the horizontal collector unit 64 that is provided with, making its long side direction is horizontal direction.Accepting mechanism 96 has relative above-below direction and accepts member with what one or more layers set.Particularly, at this, shown in Fig. 2 and Fig. 5 A, B, accept mechanism 96 have brokenly with three layers set accept member.That is, the semicircular portion at the bottom side (lower side in the drawings) of the enclosure body cylindraceous 78 of housing 74 is separated out apart from the interval of this internal face regulation along inner wall surface thereof, sets the bottom and accepts member 96A.The cross section that member 96A is accepted in the bottom forms semicircular shape (with reference to Fig. 5 A), and is as shown in Figure 2, spread all over enclosure body 78 long side direction roughly whole zone and set.
The upper end bending laterally that member 96A is accepted in the bottom is 90 degree roughly, form shelf portion 98.Be connected fixingly with the internal face of enclosure body 78 through the side end with shelf portion 98, support base is accepted member 96A.Utilize the bottom to accept member 96A, just can be received in the clean fallen accessory substance, make it not be deposited in the bottom of enclosure body 78 from the top.The bottom is accepted member 96A and is had a plurality of passages 100, by formations such as the wire netting (woven wire) of for example stainless steel and punch metal members.Thus,, exhaust gas and clean air are circulated unobstructedly, that is, can not reduce the exhaust conductibility even accessory substance adheres to.On this point, after state all accept member also for identical structure.
On the surface of the lid 90 of gatherer body 76, the interval of the regulation of being separated by is extended to horizontal direction and is equipped with the bilevel upper reaches and accepts member 96B, 96C (with reference to Fig. 5 B).Lid 90 is because exhaust gas has directly been kept out on its surface, so the accessory substance of collecting is many.Therefore, the upper reaches are set as stated accept member 96B, 96C, when accepting cleaning from covering the accessory substance that 90 surperficial landing is got off.The upper reaches are accepted member 96B, 96C and are made up of the member that the wire netting of stainless steel and punch metal member etc. have a passage 100.Have, member is accepted at the upper reaches both can be designed to one deck, also can be designed to more than three layers again.
Below, the treating apparatus that uses said structure SiO that carry out, that use TEOS on the semiconductor wafer W surface, to carry out is described
2The film forming of film is handled.
In film formation device 22, when the holding state of unloaded semiconductor wafer W, container handling 28 is kept under the temperature that is lower than treatment temperature.When handling, at first the interval multilayer of untreated multi-disc semiconductor wafer W with regulation remained in the brilliant boat 30.Drive boat elevator 48 through rising, should in lower direction container handling 28, insert by crystalline substance boat 30.In addition, utilize the lower ending opening portion of lid 38 sealing container handlings 28, thus in the sealed container 28.
Then, increase service voltage, wafer W is warmed up to the predetermined process temperature, simultaneously, utilize gas extraction system 60 vacuumizing in the container handling 28 to heater 56.Meanwhile, the nozzle 50A from the regulation of gas supply structure 50 imports the TEOS gas through flow-control in container handling 28.This TEOS gas rises in container handling 28 on one side, Yi Bian carry out pyrolysis, on the surface of wafer W, piles up formation SiO
2Film.
In this film forming procedure, as stated,, the environmental gas in the container handling 28 is vacuumized through driving the vavuum pump 66 of gas extraction system 60.The exhaust gas of discharging from the exhaust outlet of container handling 28 52 flows through in the exhaust channel 62, through collector unit 64 and vavuum pump 66, and further side flow downstream.In this exhaust gas, contain by SiO
2Film formation reaction and the accessory substance that produces.Therefore, in the time of in exhaust gas flows through collector unit 64, accessory substance is just removed from exhaust gas.
Heating pipe box 68 work in order to prevent to adhere to the accumulation accessory substance in collector unit 64 part in addition, to make to cover gas extraction system 60 and be provided with are heated to integral body for example about 150 ℃ in advance.The exhaust gas that gets into from gas access 74A on one side downstream effluent cross in the enclosure body 78 of housing 74, on one side the indicated that kind of arrow labeled as shown in Figure 4 104, towards the center through between each fin 86 of gatherer body 76.After this, exhaust gas is from being arranged on the gas vent 74B side flow downstream on the lid 80.Like this, in the time of in exhaust gas flows through collector unit 64, in the part of exhaust gas contact, the accessory substance in the exhaust gas will adhere to accumulation, promptly is collected, thereby it is removed from exhaust gas.
This accessory substance mainly is in a large number attached on the surface of each fin 86 and be removed (collection).In addition, accessory substance reaches attached to the internal face with the surface of discharging the lid 90 that gas directly contacts, gatherer body 76 respectively also that respectively to accept member 96A～96C last and be removed.This accessory substance is with SiO
2Material for main body.If setting is flow through the cooling unit of cooling agent and to its cooling, just can more effectively be removed accessory substance in gatherer body 76.
After above-mentioned film forming is finished dealing with, stop the supply of TEOS gas, through N
2Gas etc. purge and discharge the residual gas in the container handling 28.Then, brilliant boat 30 is descended downwards, take out the wafer W of handling.
Handle through carrying out a series of like this film forming repeatedly,, for example comprise and to adhere to the unwanted film (SiO that generates by TEOS on the surface of surface, heat-preservation cylinder 46 of surface, the brilliant boat 30 of the container handling 28 of inner core 24 and urceolus 26 at the internal structure thing
2Film).Therefore, regularly or aperiodically be used to peel off the clean of removing these unwanted films.In this clean, in brilliant boat 30, do not keep under the state of wafer W (under the Light Condition), be inserted in the container handling 28 and make the inner sealing state that is.
Under with the state of the temperature maintenance in the container handling 28 in set point of temperature, control flow as the HF gas of clean air on one side, from nozzle 50B it is imported in container handling 28 on one side.Meanwhile, Yi Bian carry out flow-control, Yi Bian will be as the N of diluent gas from nozzle 50C
2Gas imports in the container handling 28.
Like this, import the HF gas in the container handling 28, when in container handling 28, flowing, will touch each surface of heat-preservation cylinder 46, brilliant boat 30, inner core 24, urceolus 26.Thus, remove the silicon oxide film (SiO that adheres to above that through etching by the TEOS generation
2), and it is cleaned.Clean air flows to the gas extraction system 60 vacuumize, also be SiO attached to the principal components in the gas extraction system 60
2Byproduct reaction, with its removal.
At this moment, press following formula and SiO as the HF gas of clean air
2Reaction, the SiF of generation
4Become gas and overflow, carry out the removal of accessory substance.
4HF+SiO
2→SiF
4+2H
2O
In order to promote above-mentioned reaction, and make the moisture (H of generation
2O) evaporation, to prevent the stainless corrosion as constituent material, running heating muff 68 for example, remains on gas extraction system 60 integral body about 150 ℃.In addition, in collector unit 64, also can drive gatherer heater 92 gatherer body 76 is heated to for example about 100 ℃.An example of the treatment conditions during this cleaning is following.The temperature of container handling: 500 ℃, the pressure in the container handling: 150Torr, gas flow: HF/N
2=3/3 liter, the temperature of exhaust channel: 150 ℃.
Like this, when this clean proceeded to a certain degree, the adhesion strength that is attached to the accessory substance in the collector unit 64 descended because of the moisture that reaction is generated, from sur-face peeling, fall.In this case, shown in figure 11 in existing collector unit, accessory substance will pile up like a mountain in the bottom.It is removed fully needs for a long time, perhaps under the situation with its removal fully, just must collector unit self decomposed and cleans.
Relative therewith, in this embodiment, the accessory substance under the attachment surface exfoliation is the way that falls, and the last quilt of member 96A～96C of respectively accepting of respectively accepting mechanism 96 in being arranged on collector unit 64 is accepted, and M2 is retained as accessory substance.Fig. 6 A-C is illustrated in the cross section of difference corresponding diagram 5A, B and Fig. 2, and accessory substance is retained in the sectional view of the state when respectively accepting on the parts.
Shown in Fig. 6 A-C, accept to accept member 96B with the bilevel upper reaches that are arranged on the lid 90 of gatherer body 76 on the member 96A in the bottom of the bottom that is arranged on enclosure body 78,96C is last, bulk deposition has from attachment surface and peels off the accessory substance M2 that gets off.But, owing to respectively accept member 96A～96C and form by the wire mesh members with passage 100 or punch metal member etc., thus clean air usually below on respectively accept the last accessory substance M2 that accepts of member 96A～96C, reaching the two sides contact.That is, the contact area of accessory substance M2 and clean air is remained on the state of the situation that is far longer than accessory substance M1 shown in Figure 11.Therefore promote the reaction with clean air, make and remove accessory substance effectively and become possibility.
Like this, in the inside of collector unit 64, what be equipped with that accessory substance that cleaning the time is fallen accepts in falling the way accepts member 96A～96C.Therefore, even after falling, this accessory substance also can be in and clean air state of contact and being exposed effectively.Thus, just can get rid of accessory substance M2 effectively, the result just can be with short time and certain accessory substance of collecting of removing effectively when cleaning.
< experiment >
The result is following: in the collector unit 2 of Figure 11, the amount of the accessory substance before the clean is 172.9g, and the residue after the clean is 35.1g.Therefore, the ratio of its residue is 20%.Relative therewith, in collector unit 64, the amount of the accessory substance before the clean is 169.5g, and the residue after the clean is 4.5g.Therefore, the ratio of its residue is 2.7%, can confirm, than 20% of existing situation, can improve significantly.
< the 1st variant >
Fig. 7 is the sectional view of the collector unit that relates to of expression the 1st variant.In this variant, accept in the way of member 96A circular arc in the bottom of the cross section semicircle shape shown in Fig. 5 A, the B, form 2 short shelf portion 110 of width toward each other in the horizontal direction.Shelf portion 110 sets along the long side direction of enclosure body 78.Utilize shelf portion 110 can prevent that accessory substance from accepting the curved surface of member 96A and sliding and move in the bottom, and can accept by the fallen accessory substance in top.In addition, also to accept member 96A the same with the bottom for shelf portion 110, formed by wire mesh members or the such member with passage of punch metal member.And, the bottom accept member 96A below, be equipped with the 2nd bottom along the long side direction of enclosure body 78 and accept member 96D.
Like this, through accepting member 96A, 96D, just can utilize the 2nd bottom that is positioned at the below to accept member 96D and accept once more to accept the accessory substance that member 96A falls from the bottom on upper strata with the two-layer bottom that is provided with.Therefore, can prevent that accessory substance from dropping to the bottom of enclosure body 78, this can further improve cleaning efficiency.
In addition, through in the way of accepting member 96A in the bottom shelf portion 110 being set, just can not make the state of its dispersion keep the accessory substance that falls not assemble.Can more effectively improve cleaning efficiency thus.
< the 2nd variant >
Fig. 8 is the sectional view of the collector unit that relates to of expression the 2nd variant.In this variant, accept that mechanism 96 possesses full week of spreading all over gatherer body 76 and the member 96E that accepts cylindraceous between the inner surface of gatherer body 76 and enclosure body 78.In this case, also can bring into play embodiment and the identical action effect of variant with the front.
< the 3rd variant >
Fig. 9 is the sectional view of the collector unit that relates to of expression the 3rd variant.In above-mentioned embodiment and the 1st, the 2nd variant, collector unit 64 is set, making its long side direction is horizontal direction.Relative therewith, the collector unit that the 3rd variant relates to is set, making its long side direction is vertical direction.In this case, accept mechanism 96 and possess a plurality of members of accepting that form by circular shelf portion.In embodiment illustrated, accept member 96F, 96G, 96H with 3 layers of shelf-like that is equipped with ring-type along the short transverse of enclosure body 78.
In this case, fallen accessory substance in the time of also can utilizing each shelf-like to accept member 96F～96H to accept to clean respectively prevents that this accessory substance from concentrating on the bottom and making its dispersion.Therefore, in this case, also can bring into play the action effect that embodiment and the 1st～the 2nd variant is identical with the front.Have again, also can above-mentioned embodiment of appropriate combination and the 1st～the 3rd variant.
< exhaust channel accept member >
In above-mentioned embodiment and each variant, accept mechanism 96 and be provided in the collector unit.Be replaced in this, also can be provided in the exhaust channel 62 accepting mechanism 96.That is, also there is the arrangement position according to each parts shown in Figure 1 in exhaust channel 62, the situation that mode generation crank portion 72 sets must bend to for example rectangular-shaped.Owing to adopt such crank portion 72 flow direction of about-face exhaust gas greatly, so exist accessory substance to be attached to the tendency of the internal face of exhaust channel 62.In this case, if this crank portion 72 is positioned at the upstream side of collector unit 62, the tendency of then adhering to accessory substance is necessarily very high.But, even be positioned at the downstream, do not remove clean byproduct stream side downstream with collector unit 64, also can be attached to crank portion 72.
Figure 10 is illustrated in the rising part of exhaust channel and the sectional view that sloping portion is equipped with the state of accepting member.That is, the rising part and the sloping portion of the exhaust channel 62 in crank portion 72, be equipped with respectively with the mode of traversing exhaust channel 62 accept mechanism 96 pipe arrangement with accepting member 96J, 96K.In this case, pipe arrangement is also formed by woven wire or the such member with passage of punch metal member with accepting member 96J, 96K.
In Figure 10, floating and fall in the clean way attached to the accessory substance of the corner part 72A of crank portion 72.Therefore, in the way that falls, utilize pipe arrangement respectively it to be accepted, make it can not accumulate in the bottom of crank portion 72 with accepting member 96J, 96K.In this case, owing to making accessory substance not accumulate in a position and being accepted dispersedly, therefore just can bring into play the action effect that embodiment and the 1st～the 3rd variant is identical with the front.
< other variant >
In the above-described embodiment, illustration goes out to carry out SiO
2The situation of the film forming of film.Sometimes also when mixing B (boron) or P (phosphorus) etc., form this film.The kind of film also is not limited to silicon oxide film (SiO
2), also can be other films such as silicon nitride film or silicon oxynitride film.Under the situation that forms silicon nitride film, supply with silicon source gas, NH from treating-gas supply system
3Nitriding gas such as gas.Under the situation that forms silicon oxynitride film, supply with silicon source gas, nitrous oxide (N from treating-gas supply system
2O), the such nitrogen oxidizing gas of nitric oxide (NO).
The clean air that uses is not limited to HF gas, can use the clean air that is fit to according to the kind of the film of piling up.Particularly, as the clean air of silicon oxide film, silicon nitride film, silicon oxynitride film, for example, can contain and be selected from HF, Cl
2, NF
3, F
2In more than one gas.For example, in order to remove silicon nitride film, can use F
2+ H
2Clean air.
In the above-described embodiment, illustration the batch type treating apparatus.Be alternative in this, the present invention also can be applicable to the treating apparatus of the one chip of blocks of ground processing wafers.As being processed substrate, the alternative semiconductors wafer also can be with glass substrate, LCD substrate, ceramic substrate etc. as object.
Claims (19)
1. a collector unit is provided in the exhaust channel of semiconductor processing device, is used for collecting flowing through the accessory substance that its inner discharge gas contains, and it is characterized in that, comprising:
Housing, it has gas access and gas vent, and sets with the mode of the part that forms said exhaust channel;
The gatherer body; Be provided in the said housing with the mode that can load and unload; Be used for collecting the part of the said accessory substance of said discharge gas; Said gatherer body comprises a plurality of fins of arranging along said discharge gas flow direction, and each fin has the surface of collecting through the part of adhering to said accessory substance; With
Accept mechanism; Be provided in the said housing; The part of the said accessory substance that acceptance is peeled off from the inner surface of said gatherer body or said housing; Make its bottom that is not deposited in said housing, the said part of accepting mechanism's allow retention said accessory substance above that contacts with clean air from the above and below
Said gatherer body is included in the lid that upstream side makes diffusion around the gas flow, and the said mechanism that accepts comprises and is installed in the said upstream side part that covers.
2. collector unit as claimed in claim 1 is characterized in that:
The said mechanism that accepts comprises the plate with a plurality of passages that said clean air passes through.
3. collector unit as claimed in claim 2 is characterized in that:
Said plate comprises the member that is selected from woven wire and the punch metal member.
4. collector unit as claimed in claim 1 is characterized in that:
Saidly accept the lower portion that mechanism comprises the downside that is configured in said gatherer body.
5. collector unit as claimed in claim 1 is characterized in that:
Saidly accept the lateral side part that mechanism comprises the cross side that is configured in said gatherer body.
6. collector unit as claimed in claim 2 is characterized in that:
Said plate sets with the mode of vacating the interval of regulation with the inner surface of said housing and expand along said inner surface.
7. collector unit as claimed in claim 6 is characterized in that:
The said mechanism that accepts comprises the shelf portion of extending to said gatherer body from said plate.
8. collector unit as claimed in claim 7 is characterized in that:
Said shelf portion has the passage that said clean air passes through.
9. collector unit as claimed in claim 6 is characterized in that:
Said plate spreads all over half cycle, between the inner surface of said gatherer body and said housing.
10. collector unit according to claim 6 is characterized in that:
Said plate spreads all over full week, between the inner surface of said gatherer body and said housing.
11. collector unit as claimed in claim 1 is characterized in that:
Saidly accept that mechanism is included in the above-below direction devices spaced apart and a plurality of plates of arranging and having a plurality of passages that said clean air passes through.
12. collector unit as claimed in claim 1 is characterized in that:
Said gatherer body comprises the gatherer heater that heats said gatherer body.
13. the film formation device that semiconductor processes is used is characterized in that, comprising:
Hold the container handling that is processed substrate;
In said container handling, support the said supporting member that is processed substrate;
Heat the said heater that is processed substrate in the said container handling;
Discharge the gas extraction system of the gas in the said container handling;
In said container handling, supply with the film forming gas feed system of film forming gas; With
The clean air feed system of supplying clean gas in said container handling,
Said gas extraction system comprise be provided in the exhaust channel, be used for collecting the collector unit that flows through the accessory substance that its inner discharge gas contains,
Said collector unit comprises:
Housing, it has gas access and gas vent, and sets with the mode of the part that forms said exhaust channel;
The gatherer body; Be provided in the said housing with the mode that can load and unload; Be used for collecting the part of the said accessory substance of said discharge gas; Said gatherer body comprises a plurality of fins of arranging along said discharge gas flow direction, and each fin has the surface of collecting through the part of adhering to said accessory substance; With
Accept mechanism; Be provided in the said housing; The part of the said accessory substance that acceptance is peeled off from the inner surface of said gatherer body or said housing; Make its bottom that is not deposited in said housing, the said part of accepting mechanism's allow retention said accessory substance above that contacts with said clean air from the above and below
Said gatherer body is included in the lid that upstream side makes diffusion around the gas flow, and the said mechanism that accepts comprises and is installed in the said upstream side part that covers.
14. film formation device as claimed in claim 13 is characterized in that:
The said mechanism that accepts comprises the plate with a plurality of passages that said clean air passes through.
15. film formation device as claimed in claim 14 is characterized in that:
Said plate sets with the mode of vacating the interval of regulation with the inner surface of said housing and expand along said inner surface.
16. film formation device as claimed in claim 13 is characterized in that:
Said film forming gas contains and is used to form the gas that is selected from the film in silicon oxide film, silicon oxynitride film and the silicon nitride film.
17. film formation device as claimed in claim 16 is characterized in that:
Said clean air contains and is selected from HF, Cl
2, NF
3, F
2In more than one gas.
18. film formation device as claimed in claim 13 is characterized in that:
Said gas extraction system comprises the additional mechanism that accepts; It is provided in the said exhaust channel with the position different with said collector unit; The part of the said accessory substance that acceptance is peeled off from the inner surface of said exhaust channel; Make its bottom that can not be deposited in said exhaust channel, the said additional part of accepting mechanism's allow retention said accessory substance above that contacts with said clean air from the above and below.
19. film formation device as claimed in claim 18 is characterized in that:
Said additional acceptance in the rising part or sloping portion that mechanism is provided in said exhaust channel.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-276462 | 2006-10-10 | ||
| JP2006276462A JP5023646B2 (en) | 2006-10-10 | 2006-10-10 | Exhaust system, collection unit, and processing apparatus using the same |
| JP2006276462 | 2006-10-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101234389A CN101234389A (en) | 2008-08-06 |
| CN101234389B true CN101234389B (en) | 2012-09-05 |
Family
ID=39358509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101701259A Active CN101234389B (en) | 2006-10-10 | 2007-10-10 | Collector unit for semiconductor process |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7727296B2 (en) |
| JP (1) | JP5023646B2 (en) |
| KR (1) | KR101129099B1 (en) |
| CN (1) | CN101234389B (en) |
| TW (1) | TWI415188B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| US7727296B2 (en) | 2010-06-01 |
| KR101129099B1 (en) | 2012-03-23 |
| CN101234389A (en) | 2008-08-06 |
| TWI415188B (en) | 2013-11-11 |
| JP5023646B2 (en) | 2012-09-12 |
| TW200834721A (en) | 2008-08-16 |
| JP2008098283A (en) | 2008-04-24 |
| US20080104935A1 (en) | 2008-05-08 |
| KR20080032611A (en) | 2008-04-15 |
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