CN101252329B - Structure and method for making low driving voltage micro-holding type actuator - Google Patents
Structure and method for making low driving voltage micro-holding type actuator Download PDFInfo
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- CN101252329B CN101252329B CN200710003171XA CN200710003171A CN101252329B CN 101252329 B CN101252329 B CN 101252329B CN 200710003171X A CN200710003171X A CN 200710003171XA CN 200710003171 A CN200710003171 A CN 200710003171A CN 101252329 B CN101252329 B CN 101252329B
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Abstract
The invention relates to a method to manufacture a low-driving voltage micro clutch type actuator and the structure thereof. The method includes the steps: an insulating barrier is deposited on a silicon substrate with super-low resistance and is etched after the process of a first microfilm, with the prearranged position for the lower electrode of the silicon substrate with super-low resistance exposed outside; a first low-stress sacrificial layer is deposited on the insulating barrier, and an anchor, the prearranged position for a micro projecting point and an axle bush pattern are etched in the process of a second microfilm; a second low-stress sacrificial layer is deposited on the first low-stress sacrificial layer to modify the minimum line width of the axle bush to be lower than 1.5 microns; the anchor and the pattern of the prearranged position for the lower electrode are etched in the process of a third microfilm; a main structure layer is deposited on the second low-stress sacrificial layer and is disposed into a horizontal furnace tube for phosphorus diffusion and high-temperature anneal process; the pattern of the main structure layer is etched in the process of a forth microfilm; the patterns of an upper and the lower electrodes are etched in the process of a fifth microfilm; the first and the second low-stress sacrificial layers are etched through wet etching so as to release the main structure layer.
Description
Technical field
The present invention relates to a kind of method and structure thereof of making low driving voltage micro-holding type actuator, it applies to the face type micro-processing technology (Surface Micromechaning Technology) of similar manufacture of semiconductor technology, have a batch making, low-cost and integrated characteristic, to solve the traditional IC technical disadvantages.
Background technology
The global in recent years mini-fan (Micro Fan) that is developed is utilization MEMS (micro electro mechanical system) (Microelectromechanical Systems; MEMS) fabrication techniques element, its size approximately has only 2mm * 2mm.The structure of mini-fan comprises two parts, and the first is made the gentle breeze fan blade with self-packaging technology (Self-assembly), and it two is with micro-holding type actuator (Scratch Drive Actuator; SDA) micro motor of forming as rotor (Micro Motor), and the detailed making step of micro motor is multi-user MEMS processing procedure (the Multi-User MEMS Processes that adopts MEMSCAP company to be developed; MUMPs).
Micro-holding type actuator is quite extensive on using, and manner of execution is also a lot, and existing many people delivered the research about micro-holding type actuator on the international periodical, for example:
The micro-holding type actuator notion that people such as Junqi Zhu at first propose, form its primary structure by polysilicon, active principle is to utilize the electrostatic force of vertical direction to make actuating dull and stereotyped (Plate) and axle bush (Bushing) friction bottom surface insulating barrier produce horizontal actuation force, and different micro-holding type actuator arrangement modes can be formed orthoscopic actuator or stepping rotation motor.
People such as Terunobu Akiyama advance distance relation by the velocity of displacement of experimental observation micro-holding type actuator and input voltage frequency relation, input voltage peak value and each walking and activate dull and stereotyped length and distance relation is advanced in each walking, and micro-holding type actuator is connected in a flexible rod member, utilize the power output of the deflection (Buckling) of flexible rod member, and draw the relation of input voltage peak value and power output with the measurement micro-holding type actuator.
People such as P.Langlet are with the driver of micro-holding type actuator as the X/Y precisely locating platform, and with the location of this platform application in the optical fiber coupling, the process experimental result obtains the influence of different actuating flat geometry to the micro-holding type actuator qualification rate.
People such as Mita are fixed in a plurality of micro-holding type actuators of turning one's coat and are formed array on the glass baseplate with special combination technology (Boading), form the micro-holding type actuator conveyer belt.
Yamato Fukuta is to reinvent shape technology (Reshaping technology) with oneself assembling (Self-assembling) device of micro-holding type actuator as three-dimensional structure.
People such as Lin import micro-holding type actuator with guide rail with voltage, and make it promote XYZ three-dimensional platform, mirror surface and little Fresnel (Fresnel) lens, form free space (Free-space) micro-optic laboratory table.
People such as Ryan J.Linderman form 188 micro-holding type actuators array and connect the object that will activate by special combination technology (Boading), import voltage with little chain again.On the other hand the micro-holding type actuator array is fixed on the ceramic wafer with Flip chip bonding (covering crystalline substance) technology, and comes the resulting best dull and stereotyped length that activates of proof theory derivation with experiment.
Paul E.Kladitis with circular arrangement, forms the rotation motor of diameter 520 μ m with micro-holding type actuator, and the silicon blade erected is fixed on this motor, can be applicable to promote microfluid.
Up to the present, all documents all can't accurately measure out the strength that micro-holding type actuator can export and the permissible range of displacement, the life-span that can operate and mode and operating voltage, owing to need to integrate multinomial highly difficult key technology, its reason of inference is the characteristic of micro-holding type actuator is still failed on top of, and its possible cause is:
(1) suitable electrode layer and insulating barrier are not easy to make.
(2) size design does not reach optimization as yet, comprises shape and the hole size of depth-to-width ratio, beam (cantilever beam) ... or the like.
(3) driving voltage descends.
Above-mentioned each reason all is enough to influence the performance of whole micro-holding type actuator, changing any one parameter all is challenge to the integration of whole processing procedure, developing complete processing procedure integration step and carry out theory and experiment optimization, is the bottleneck of difficult breakthrough of present micro-holding type actuator.
As shown in Figure 1, operating principle for micro-holding type actuator, when actuating dull and stereotyped 10 and axle bush 11 have capacitive structure to form, can in actuating dull and stereotyped 10, obtain electrostatic force, in the time of on being added on actuating dull and stereotyped 10 outside the periodic electrostatic force of tool, can cause actuating dull and stereotyped 10 on substrate 12, to form step motion, promptly describe when adding the stepwise operation of square wave between actuating dull and stereotyped 10 and substrate 12 as (b) among the figure, (c), (d).
When adding a positive bias, activating dull and stereotyped 10 is attracted by substrate 12 because of electrostatic force, but activate dull and stereotyped 10 the place aheads and have axle bush 11, its whole flat area can't be adsorbed on the insulating barrier (insulator) 13 fully, therefore have electric charge and be temporary in the actuating dull and stereotyped 10, and then cause actuating dull and stereotyped 10 to have elasticity tension.
When voltage descended, this elasticity tension was released immediately, made that activating dull and stereotyped 10 returns to the original form, and when release voltage, because axle bush 11 contacts with insulating barrier 13 always, can produce frictional force and allow whole actuating dull and stereotyped 10 advance.
When adding a back bias voltage again, activate dull and stereotyped 10 and also can be produced the action that repeats, make to activate dull and stereotyped 10 continuous actions on insulating barrier 13 by substrate 12 absorption.
The action that activates flat board 10 can be controlled by applying pulse, and speed and pulse frequency are directly proportional, Δ x value shown in the figure may be defined to the displacement that applied voltage causes, and this Δ x value is not only relevant with voltage amplitude also relevant with the height of length that activates flat board 10 and axle bush 11.
Summary of the invention
Driving voltage is the key that micro-holding type actuator activates, consider cost, processing procedure is integrated and factor such as processing procedure complexity, main purpose of the present invention is to provide a kind of method and structure thereof of making low driving voltage micro-holding type actuator, can overcome the board limit, and utilize cheaply that fabrication steps reaches high output and low driving voltage purpose.
For achieving the above object, a kind of method of making low driving voltage micro-holding type actuator provided by the present invention, it is characterized in that comprising following steps: step 1: deposition one insulating barrier on a ultralow resistance silicon substrate, and, expose the bottom electrode precalculated position of ultralow resistance silicon substrate at the described insulating barrier of the first road micro-photographing process after etching; Step 2: on described insulating barrier, deposit ground floor low stress sacrifice layer, and define anchor, miniature prominent some precalculated position and axle bush pattern in the second road micro-photographing process etching; Step 3: deposition second layer low stress sacrifice layer on described ground floor low stress sacrifice layer reaches below the 1.5 μ m to revise the axle bush minimum feature; Step 4: the pattern that defines anchor and bottom electrode precalculated position in the 3rd road micro-photographing process etching; Step 5: deposition main structure layer on described second layer low stress sacrifice layer, and insert horizontal boiler tube and carry out phosphorous diffusion and high annealing processing procedure; Step 6: the pattern that defines the main structure layer in the 4th road micro-photographing process etching; Step 7: define top electrode and bottom electrode pattern in the 5th road micro-photographing process etching; Step 8: with first and second low stress sacrifice layer of Wet-type etching to discharge the main structure layer.
In the technical scheme of the invention described above, the resistance of described ultralow resistance silicon substrate is 0.001～0.004 Ω-cm.
In the technical scheme of the invention described above, described insulating barrier is the low stress nitride silicon thin film.
In the technical scheme of the invention described above, described first and second layer low stress sacrifice layer is the phosphorosilicate glass film.
In the technical scheme of the invention described above, described main structure layer is the low stress polysilicon membrane.
In the technical scheme of the invention described above, described upper and lower electrode is with electron beam evaporation plating machine evaporation chromium/gold.
This method can apply to the structure assembling of the structure assembling of mini-fan motor, little radiating module, structure assembling, micro sprue system and the low-light communication switch of little element of exerting oneself.
The invention provides a kind of structure of low driving voltage micro-holding type actuator, it is characterized in that comprising: a ultralow resistance silicon substrate; One insulating barrier is deposited on the ultralow resistance silicon substrate; At least one main structure layer is deposited on the insulating barrier; Main structure layer below is manufactured with more than one miniature prominent point, to prevent viscid effect.
In the technical scheme of the invention described above, the resistance of described ultralow resistance silicon substrate is 0.001～0.004 Ω-cm.
In the technical scheme of the invention described above, described insulating barrier is the low stress nitride silicon thin film.
In the technical scheme of the invention described above, described main structure layer is the low stress polysilicon membrane.
This structure can apply to the structure assembling of the structure assembling of mini-fan motor, little radiating module, structure assembling, micro sprue system and the low-light communication switch of little element of exerting oneself.
Because traditional micro-holding type actuator is with general resistance silicon substrate (20 Ω-cm) as bottom electrode, driving voltage is greatly about the scope of 70～120V, except the silicon substrate material of bottom electrode can influence driving voltage, the thickness of the height of axle bush, width and main structure layer polysilicon also can influence.Therefore, the present invention utilizes ultralow resistance silicon substrate (0.001～0.004 Ω-cm) as lower electrode material, and change the process parameter of micro-holding type actuator and the minimum feature of adjustment element, and then micro-holding type actuator element drives voltage significantly is reduced between 5～25V.So The present invention be directed to the integrated design research and development of micro motor, significantly reduce the driving voltage of micro-holding type actuator with ultralow resistance silicon substrate, and complete and stable fabrication steps and method is provided, can take into account the integrated possibility that changes into one chip of mini-fan chip and control circuit.
Description of drawings
Fig. 1 is the step motion schematic diagram that micro-holding type actuator adds driving voltage;
Fig. 2 is the tomograph that the present invention makes the micro-holding type brake;
Fig. 3 is a fabrication steps schematic diagram of the present invention;
Fig. 4 is the measurement curve of voltage and deflection voltage at the bottom of the subsides of micro-holding type actuator of the present invention;
Fig. 5 be at the bottom of the subsides of micro-holding type actuator of the present invention voltage with activate the writing board shape graph of a relation;
Fig. 6 is ultralow resistance chip and voltage comparison diagram at the bottom of the subsides of general chip.
Embodiment
The present invention relates to a kind of method and structure thereof of making low driving voltage micro-holding type actuator, with complete and stable fabrication steps and the method for ultralow resistance silicon substrate material fit, can reduce the driving voltage of micro-holding type actuator, and control axle bush width is no more than 1.5 μ m, below is that conjunction with figs. describes innovation processing procedure of the present invention in detail:
As shown in Figure 2, the present invention includes ultralow resistance silicon substrate 20, insulating barrier 21, main structure layer 30 and upper and lower electrode 41,42 at least.
In order to prevent that viscid effect (sticing effect) from producing, the present invention makes miniature prominent point (Dimple) 31 especially below main structure layer 30 viscid to prevent, detailed making flow process as shown in Figure 3:
(a) on a ultralow resistance silicon substrate 20, deposit low stress nitride silicon thin film (Si3N4) as insulating barrier 21 with Low Pressure Chemical Vapor Deposition (LPCVD), and after the first road micro-photographing process, with inductance coupling high formula electric paste etching machine (ICP) etching isolation layer 21, to expose the bottom electrode precalculated position 25 of ultralow resistance silicon substrate 20.
(b) with plasma enhanced chemical vapor deposition method (PECVD) on insulating barrier 20 sedimentary phosphor silex glass film (PSG-0) as ground floor low stress sacrifice layer 22, and, on ground floor low stress sacrifice layer 22, define anchor (anchor), miniature prominent point (dimple) precalculated position 23 and three patterns of axle bush (bushing) simultaneously with inductance coupling high formula electric paste etching machine (ICP) etching with the second road micro-photographing process.
(c) with plasma enhanced chemical vapor deposition method (PECVD) on ground floor low stress sacrifice layer 22 sedimentary phosphor silex glass film (PSG-1) as second layer low stress sacrifice layer 24, the main purpose of deposition second layer low stress sacrifice layer 24 is to revise the axle bush width, because the live width minimum resolution of exposure bench is 2 μ m, it is 1.5 μ m that but co-operating member must have minimum feature, therefore utilizes this one step to dwindle the minimum feature limit that board has no idea to reach.
(d) the 3rd road micro-photographing process defines the pattern in anchor and bottom electrode precalculated position 25 with inductance coupling high formula electric paste etching machine (ICP) etching.
(e) on second layer low stress sacrifice layer 24, deposit low stress polysilicon membrane (Poly-Si) as main structure layer 30 with Low Pressure Chemical Vapor Deposition (LPCVD), and chip is inserted horizontal boiler tube carry out phosphorous diffusion and high annealing processing procedure.
(f) the 4th road micro-photographing process defines the pattern of main structure layer 30 with inductance coupling high formula electric paste etching machine (ICP) etching.
(g), define the pattern of top electrode 41 and bottom electrode 42 with wet etching with electron beam evaporation plating machine evaporation chromium/gold, and at the 5th road micro-photographing process.
(h) element is placed buffered hydrofluoric acid (BOE) carry out Wet-type etching, and first and second low stress sacrifice layer 22,24 of etching, to discharge main structure layer 30.
As with sweep electron microscope (Scanning Electron Microscope; SEM) take the micro-holding type actuator component structure, just the element suspension structure after discharging as can be seen, because use the low stress polysilicon membrane as the main structure layer, make the planarization of element quite good, can not produce because membrane stress does not match and causes the situation of component failure.
As shown in Figure 4, micro-holding type actuator element of the present invention is after dynamic characteristic test, find that it pastes end voltage (snap voltage) and presents linear relationship with deflection voltage (priming voltage), and conform to predicting the outcome of external simulation, identical with world institute of well-known R﹠D team Simulation result approximate trend, but the driving voltage of micro-holding type actuator element of the present invention is obviously than existing micro-holding type actuator element is much lower in the world.
Again as shown in Figure 5, if inquire at the designed multiple different relations that activate writing board shape and driving voltage of the present invention, test result is found:
When the actuating flat board is triangle (Triangle), its driving voltage is approximately than the high 1～2V of driving voltage of rectangular flat, but triangle flat plate has the significant advantage that more can not shorten the life-span because of stored charge, and triangle flat plate also has short driving time of delay simultaneously.On the other hand, the tail end of rectangular flat not only can reduce stored charge if can add suitable etch-hole design, also can reduce driving voltage simultaneously.
For another shown in Figure 6, if voltage at the bottom of the subsides of more ultralow resistance chip and general chip can clearly be found:
Reducing driving voltage can do correction from bottom electrode (substrate) material of element, and when the present invention integrated at processing procedure, the substrate that utilizes two batches of different resistances was found through after the identical fabrication steps as bottom electrode:
Low-resistance substrate can obtain reducing than common substrate the driving voltage of about 5～6V, and this result and inventor's prediction meets fully.In the future if cooperate the adjustment of top electrode metal material again, expectation can reduce about 10V driving voltage and make it reach voltage quasi position below 10 volts, this helps following micro-holding type actuator with extremely and applies to all kinds of mass production products, for example: the structure assembling of the structure assembling of mini-fan motor, little radiating module, structure assembling, micro sprue system and the low-light communication switch of little assembly of exerting oneself.
In sum, the present invention has possessed above every advantage really, also has the obvious effect enhancement than commonly using structure.
The above only is a preferable enforcement kenel of the present invention, and the equivalent structure that all application specification of the present invention, claims or accompanying drawing are done changes, and all should be included in the scope of patent protection of the present invention.
Claims (18)
1. method of making low driving voltage micro-holding type actuator is characterized in that comprising following steps:
Step 1: deposition one insulating barrier on a ultralow resistance silicon substrate, and, expose the bottom electrode precalculated position of ultralow resistance silicon substrate at the described insulating barrier of the first road micro-photographing process after etching; The resistance of described ultralow resistance silicon substrate is 0.001～0.004 Ω-cm;
Step 2: on described insulating barrier, deposit ground floor low stress sacrifice layer, and define anchor, miniature prominent some precalculated position and axle bush pattern at the second road micro-photographing process after etching;
Step 3: deposition second layer low stress sacrifice layer on described ground floor low stress sacrifice layer reaches below the 1.5 μ m to revise the axle bush minimum feature;
Step 4: the pattern that defines anchor and bottom electrode precalculated position at the 3rd road micro-photographing process after etching;
Step 5: deposition main structure layer on described second layer low stress sacrifice layer, and insert horizontal boiler tube and carry out phosphorous diffusion and high annealing processing procedure;
Step 6: the pattern that defines the main structure layer at the 4th road micro-photographing process after etching;
Step 7: define top electrode and bottom electrode pattern at the 5th road micro-photographing process after etching;
Step 8: with the described ground floor of Wet-type etching and second layer low stress sacrifice layer to discharge the main structure layer.
2. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: described insulating barrier is the low stress nitride silicon thin film.
3. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: described first and second layer low stress sacrifice layer is the phosphorosilicate glass film.
4. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: described main structure layer is the low stress polysilicon membrane.
5. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: described upper and lower electrode is with electron beam evaporation plating machine evaporation chromium/golden formed electrode.
6. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: this method can apply to the structure assembling of mini-fan motor.
7. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: this method can apply to the structure assembling of little radiating module.
8. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: this method can apply to the structure assembling of little element of exerting oneself.
9. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: this method can apply to the structure assembling of micro sprue system.
10. make the method for low driving voltage micro-holding type actuator according to claim 1, it is characterized in that: this method can apply to the structure assembling of low-light communication switch.
11. the structure of a low driving voltage micro-holding type actuator is characterized in that comprising:
One ultralow resistance silicon substrate, the resistance of described ultralow resistance silicon substrate is 0.001～0.004 Ω-cm;
One insulating barrier is deposited on the ultralow resistance silicon substrate;
At least one main structure layer is deposited on the insulating barrier;
Main structure layer below is manufactured with more than one miniature prominent point, to prevent viscid effect.
12. as the structure of low driving voltage micro-holding type actuator as described in the claim 11, it is characterized in that: described insulating barrier is the low stress nitride silicon thin film.
13. as the structure of low driving voltage micro-holding type actuator as described in the claim 11, it is characterized in that: described main structure layer is the low stress polysilicon membrane.
14. as the structure of low driving voltage micro-holding type actuator as described in the claim 11, it is characterized in that: this structure can apply to the mini-fan motor.
15. as the structure of low driving voltage micro-holding type actuator as described in the claim 11, it is characterized in that: this structure can apply to little radiating module.
16. as the structure of low driving voltage micro-holding type actuator as described in the claim 11, it is characterized in that: this structure can apply to little element of exerting oneself.
17. as the structure of low driving voltage micro-holding type actuator as described in the claim 11, it is characterized in that: this structure can apply to micro sprue system.
18. as the structure of low driving voltage micro-holding type actuator as described in the claim 11, it is characterized in that: described structure can apply to the low-light communication switch.
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| CN200710003171XA CN101252329B (en) | 2007-02-25 | 2007-02-25 | Structure and method for making low driving voltage micro-holding type actuator |
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| CN200710003171XA CN101252329B (en) | 2007-02-25 | 2007-02-25 | Structure and method for making low driving voltage micro-holding type actuator |
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| CN101252329B true CN101252329B (en) | 2010-11-03 |
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|---|---|---|---|---|
| US5121180A (en) * | 1991-06-21 | 1992-06-09 | Texas Instruments Incorporated | Accelerometer with central mass in support |
| US6745567B1 (en) * | 2001-12-28 | 2004-06-08 | Zyvex Corporation | System and method for positional movement of microcomponents |
| US6770506B2 (en) * | 2002-12-23 | 2004-08-03 | Motorola, Inc. | Release etch method for micromachined sensors |
| CN201018426Y (en) * | 2007-02-25 | 2008-02-06 | 建凖电机工业股份有限公司 | Low drive voltage micro-snatch type actuator structure |
-
2007
- 2007-02-25 CN CN200710003171XA patent/CN101252329B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5121180A (en) * | 1991-06-21 | 1992-06-09 | Texas Instruments Incorporated | Accelerometer with central mass in support |
| US6745567B1 (en) * | 2001-12-28 | 2004-06-08 | Zyvex Corporation | System and method for positional movement of microcomponents |
| US6770506B2 (en) * | 2002-12-23 | 2004-08-03 | Motorola, Inc. | Release etch method for micromachined sensors |
| CN201018426Y (en) * | 2007-02-25 | 2008-02-06 | 建凖电机工业股份有限公司 | Low drive voltage micro-snatch type actuator structure |
Non-Patent Citations (6)
| Title |
|---|
| Bruce Randall Donald et al.Power delivery and locomotion of untethered microactuators.Journal of microelectromechanical systems12 6.2003,12(6),947-959. |
| Bruce Randall Donald et al.Power delivery and locomotion of untethered microactuators.Journal of microelectromechanical systems12 6.2003,12(6),947-959. * |
| Ryan J. Linderman et al.Development of the micro rotary fan.Sensors and actuators: A95.2002,95135-142. * |
| Ryan J. Linderman et al.Nanometer precision positioning robots utilizing optimizedscratch drive actuators.Sensors and actuators: A91.2001,91292-300. * |
| Terunobu Akiyama et al.A new step motion of polysilicon microstructures.Proceedings of IEEE workshop on micro electro mechanical systems.1993,272-277. |
| Terunobu Akiyama et al.A new step motion of polysilicon microstructures.Proceedings of IEEE workshop on micro electro mechanical systems.1993,272-277. * |
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