CN101261892A - Low-voltage film pressure sensitive resistor based on ZnO - Google Patents
Low-voltage film pressure sensitive resistor based on ZnO Download PDFInfo
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- CN101261892A CN101261892A CNA2008100614402A CN200810061440A CN101261892A CN 101261892 A CN101261892 A CN 101261892A CN A2008100614402 A CNA2008100614402 A CN A2008100614402A CN 200810061440 A CN200810061440 A CN 200810061440A CN 101261892 A CN101261892 A CN 101261892A
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- sensitive resistor
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Abstract
The invention discloses a low-voltage thin-film voltage-sensitive resistor based on zinc oxide, which is formed by the series connection of two or more basic units that are deposited on an insulating substrate and composed of metal electrode-zinc oxide film-metal electrode; wherein, the zinc oxide film is height C-axis orientation columnar crystal film; the threshold voltage of the resistor is controllable, the manufacturing technology is simple and the adaptability is strong.
Description
Technical field
The present invention relates to the protection component of Low-voltage Electronic circuit, especially, relate to a kind of low-voltage film pressure sensitive resistor based on zinc oxide.
Background technology
Zinc oxide varistor is a kind of poly semiconductor ceramic component based on zinc oxide, has that discharge capacity is big, response speed is fast, no afterflow, advantage such as nonpolarity.But the threshold voltage of commercial piezo-resistance is all fixed at present, and for example the O402 matrix formula varistor of AVX Corp. has specifications such as 5.6V, 9V, 14V and 18V.Different circuit often needs different varistors to protect, and makes troubles for actual the use.Also do not develop at present the adjustable zinc oxide low-voltage piezoresistor of threshold voltage.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, a kind of low-voltage film pressure sensitive resistor based on zinc oxide is provided.The present invention can obtain different threshold voltages by selecting different electrodes (being pin), to adapt to the needs of different protection voltages.
The objective of the invention is to be achieved through the following technical solutions: a kind of low-voltage film pressure sensitive resistor based on zinc oxide, this varistor is connected in series by two or more elementary cells that are made of metal electrode-zinc-oxide film-metal electrode.In addition, also comprise the pin that links to each other with each metal electrode respectively.The column crystal film that described pillar shaped ZnO film is a high C-axis orientation; Described metal electrode is an aluminium film.
The invention has the beneficial effects as follows: the present invention needs only the thickness of the interior film of control unit simply, make thickness just passable less than the crystallite dimension of zinc oxide under the specific preparation condition, and the threshold voltage of whole piezo-resistance can by the polyphone unit number simply control.
Description of drawings
Fig. 1 is the cutaway view of elementary cell that the present invention is based on the low-voltage film pressure sensitive resistor of zinc oxide;
Fig. 2 cutaway view that to be the embodiment of the invention be made of four elementary cells polyphones based on the low-voltage film pressure sensitive resistor of zinc oxide;
Fig. 3 is the threshold voltage of the low-voltage film pressure sensitive resistor based on zinc oxide shown in Figure 2 and the graph of a relation between the number of plies.
Embodiment
The elementary cell that zinc oxide low-voltage piezoresistor of the present invention is made up of two or more metal electrode-zinc-oxide films-metal electrode is connected in series, and zinc-oxide film wherein is the column crystal film of high C-axis orientation.The elementary cell of a metal electrode-zinc-oxide film-metal electrode is made of top electrode 1, pillar shaped ZnO film 2, bottom electrode 3 as shown in Figure 1.
General Zinc-oxide piezoresistor is made of metal-oxide zinc-metal.There are crystal boundary in zinc oxide grain and intergranule.Because the surface energy band bending, it is right to cause the crystal grain boundary place to form a back-to-back Schottky barrier, and the potential barrier puncture promptly causes the piezo-resistance phenomenon.The thickness of zinc oxide film is bigger in the common varistor, so can regard the series connection of many crystal grain on the zinc oxide films film thickness direction as, so the threshold voltage of varistor is higher.If but zinc-oxide film wherein has only a crystal grain so for the columnar thin-film of c axle orientation in the thickness direction, can obtain very low threshold voltage thus.The pressure-sensitive threshold voltage of supposing such elementary cell is V
m, so,, just can obtain 2 times of threshold voltages to V if two such cell string
mPiezo-resistance, the rest may be inferred, if N such cell string, just can obtain threshold voltage N times to V
mPiezo-resistance.
Embodiment
With reference to accompanying drawing 2, we have made the zinc-oxide film varistor of one 4 unit.Zinc-oxide film is by the preparation of reaction direct current magnetron sputtering process, and underlayer temperature is 400 ℃ during deposition, and the XRD test shows that the zinc-oxide film under this sedimentary condition is a columnar membrane, and thickness is 80nm.Upper and lower electrode is the aluminium film of magnetically controlled DC sputtering deposition, and thickness respectively is 50nm, connects a pin 4,5,6,7,8 on each metal electrode respectively.
The threshold voltage that test obtains between the different electrode pairs is as shown in table 1.Number of unit between visible threshold voltage and the electrode has simple linear relationship.Fitting result shows unit of every increase, and threshold voltage increases by 3.3 volts approximately, sees Fig. 3.
Table 1
Claims (4)
1. the low-voltage film pressure sensitive resistor based on zinc oxide is characterized in that, it mainly is connected in series by two or more elementary cells that are made of metal electrode-zinc-oxide film-metal electrode.
2. the low-voltage film pressure sensitive resistor based on zinc oxide according to claim 1 is characterized in that, the column crystal film that described pillar shaped ZnO film is a high C-axis orientation.
3. the low-voltage film pressure sensitive resistor based on zinc oxide according to claim 1 is characterized in that, described metal electrode is an aluminium film.
4. the low-voltage film pressure sensitive resistor based on zinc oxide according to claim 1 is characterized in that, also comprises the pin that links to each other with each metal electrode respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100614402A CN101261892A (en) | 2008-04-30 | 2008-04-30 | Low-voltage film pressure sensitive resistor based on ZnO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100614402A CN101261892A (en) | 2008-04-30 | 2008-04-30 | Low-voltage film pressure sensitive resistor based on ZnO |
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| CN101261892A true CN101261892A (en) | 2008-09-10 |
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Family Applications (1)
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| CNA2008100614402A Pending CN101261892A (en) | 2008-04-30 | 2008-04-30 | Low-voltage film pressure sensitive resistor based on ZnO |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968014B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
| WO2012071051A1 (en) * | 2009-12-04 | 2012-05-31 | Shocking Technologies, Inc. | Granular non- polymeric varistor material, substrate device comprising it and method for forming it |
| US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
| US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
-
2008
- 2008-04-30 CN CNA2008100614402A patent/CN101261892A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968014B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
| US7968010B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Method for electroplating a substrate |
| US7968015B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles |
| US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
| US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
| WO2012071051A1 (en) * | 2009-12-04 | 2012-05-31 | Shocking Technologies, Inc. | Granular non- polymeric varistor material, substrate device comprising it and method for forming it |
| CN102741947A (en) * | 2009-12-04 | 2012-10-17 | 肖克科技有限公司 | Granular non-polymeric varistor material, substrate device comprising it and method for forming it |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Open date: 20080910 |